APM-6849PA [MARKIMICROWAVE]
GaAs Broadband Low Phase Noise Amplifier;
| 型号： | APM-6849PA |
| 厂家： | 
Marki |
| 描述： | GaAs Broadband Low Phase Noise Amplifier |
| 文件： | 总14页 (文件大小：1174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
GaAs Broadband Low Phase Noise Amplifier
APM-6849
1. Device Overview
1.1 General Description
The APM-6849 is a single stage broadband, low phase noise LO driver amplifier designed
to provide saturated +21 dBm output power. This amplifier uses GaAs HBT technology for
low phase noise, and provides industry leading -170 dBc/Hz at 10 kHz offset from carrier
frequency. The amplifier is also highly efficient with 21% peak PAE at 5 GHz input
frequency and low DC current draw. It is optimized to provide enough power to drive the
LO port of an S-diode mixer (2 – 20 GHz) and an H/L-diode mixer (2 - 32 GHz). This
amplifier is operational with a variety of bias conditions for both low and high-power
applications.
1.3 Applications
1.2 Features
▪
Mobile test and measurement
▪
-170 dBc/Hz phase noise at
equipment
10 kHz offset frequency
+21 dBm output power
Low DC power consumption
Positive-only biasing
▪
Radar and satellite
▪
▪
▪
▪
▪
▪
communications
▪
▪
▪
5G Transceivers
Driver amplifier for S, H, and L – diode mixers
Suitable as a T3 drive
No sequencing required
Unconditionally stable
Integrated DC blocks – No
bias-tees or off-chip blocking
required
▪
Small Signal S-parameter .s2p Files:
APM-6849CH.s2p
1.4 Functional Block Diagram
1.5 Part Ordering Options1
Part
Product
Lifecycle
Export
Classification
Description
Number
Package Green Status
APM-6849CH
APM-6849PA
Wire Bondable Die Bare Die
RoHS
RoHS
Active
Active
EAR99
EAR99
Connectorized
Module
PA
1 Refer to our website for a list of definitions for terminology presented in this table.
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APM-6849
3.2 Package Information ....................... 5
3.3 Recommended Operating Conditions..6
3.4 Sequencing Requirements................ 6
3.5 Electrical Specifications .................. 7
Table of Contents
1. Device Overview ............................... 1
1.1 General Description........................ 1
1.2 Features ....................................... 1
1.3 Applications................................... 1
1.4 Functional Block Diagram ................ 1
1.5 Part Ordering Options..................... 1
3.6 APM-6849CH Typical Performance
Plots................................................... 9
3.7 APM-6849PA Typical Performance
Plots................................................. 10
3.8 Time Domain plots………………………...11
2. APM-6849 Port Configurations and
3.9 Typical Performance Plots of Marki
Functions ............................................... 3
Mixers Driven With APM-6849PA........ 12
2.1 APM-6849CH Port Diagram............ 3
2.2 APM-6849CH Port Functions.......... 3
2.3 APM-6849PA Port Diagram............ 4
2.4 APM-6849PA Port Functions.......... 4
3. Specifications ................................... 5
3.1 Absolute Maximum Ratings.............. 5
4. Application Information..................... 13
4.1 APM-6849CH Application Circuit... 13
5. Mechanical Data…………………………14
5.1 APM-6849CH Outline Drawing ...... 14
5.2 APM-6849PA Package Outline
Drawing ............................................ 14
Revision History
Revision Code
Revision Date
Comment
-
Datasheet Initial Release
November 2019
Added Time Domain
A
B
C
D
January 2020
Plots
Updated Max Operating
Temperature
July 2020
July 2020
Updated Thermal
Resistance Specification
Updated Thermal Specs,
Updated Min Specs
October 2020
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APM-6849
2. APM-6849 Port Configurations and Functions
2.1 APM-6849CH Port Diagram
A port diagram of the APM-6849CH is shown below.
2.2 APM-6849CH Port Functions
Equivalent Circuit
for Package
Port
Function
Description
This is the amplifier die RF Input port. It is
internally DC blocked and RF matched to
50 Ω. RF input pad is GSG with 175 µm
pitch.
RF In
RF Input
Pad VC is the amplifier IC’s DC voltage
supply pad. See section 3.6 for
performance at different bias conditions.
Collector Supply
Port
VC
VB
Port VB is the current mirror DC voltage
supply port that controls the collector
current supplied to the amplifier. VB port
voltage is proportional to VC port collector
current. VB effectively functions as a gain
control pin. See section 3.6 for
Base
Supply Port
performance at different bias conditions.
This is the amplifier die RF Output port. It
is internally DC blocked and RF matched to
50 Ω. The RF output pad is GSG with 175
µm pitch. Must have less than 7:1 VSWR
when operating with voltage greater than
+5V on port VC.
RF Out
GND
RF Output
Ground
IC backside must be connected to aDC/RF
ground with high thermal and electrical
conductivity.
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APM-6849
2.3 APM-6849PA Port Diagram
A port diagram of the APM-6849PA is shown below.
2.4 APM-6849PA Port Functions
Equivalent Circuit
for Package
Port
Function
Description
This is the RF input port of the amplifier. It
is internally DC blocked and RF matched to
50 Ω.
RF In
RF Input
Port VC is the 1-stage amplifier DC voltage
supply port. The PA module VC port
connects internally to the IC’s VC port
described in section 2.2 of this datasheet.
VC
VB
Collector Supply
Base Supply
Port VB is the current mirror DC voltage
supply port that controls the collector
current supplied to the amplifier. VB port
voltage is proportional to VC port collector
current. VB effectively functions as a gain
control pin. The VB port in the PA module
internally connects to the IC’s VB port
described in section 2.2 of this datasheet.
This is the amplifier RF output port. It is
internally DC blocked and RF matched to
50 Ω. Must have less than 7:1VSWR when
operating with voltage greater than +5V on
port VC.
RF Out
GND
RF Output
Ground
Housing or coaxial cable’s outer metal layer
must be connected to a DC/RF ground
potential with high thermal and electrical
conductivity.
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APM-6849
3. Specifications
3.1 Absolute Maximum Ratings
The Absolute Maximum Ratings indicate limits beyond which damage may occur to the
device. If these limits are exceeded, the device may become inoperable or have a reduced
lifetime.
Parameter
Maximum Rating
Units
Collector Positive Bias Voltage (VC)
Positive Bias Current (Ic)
7
V
mA
V
90
Current Mirror Positive Bias Voltage (VB)
Current Mirror Positive Bias Current (Ib)
RF Input Power
7
4
mA
dBm
-
+16
Output Load VSWR
7:1
Operating Temperature
-40 to +85
-65 to +150
78
˚
˚
C
C
Storage Temperature
Thermal Resistance, θJC
ºC/W
ºC
Max Junction Temperature for MTTF > 1E6 Hours
125
3.2 Package Information
Parameter
Details
Rating
ESD
Human Body Model (HBM), per MIL-STD-750, Method 1020
APM-6849PA
TBD
Weight
14.7g
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APM-6849
3.3 Recommended Operating Conditions
The Recommended Operating Conditions indicate the limits, inside which the device should
be operated, to guarantee the performance given in Electrical Specifications Operating
outside these limits may not necessarily cause damage to the device, but the
performance may degrade outside the limits of the electrical specifications. For limits,
above which damage may occur, see Absolute Maximum Ratings.
Min Nominal Max2 Units
TA, Ambient Temperature
-40
+3
8
+25
+5
21
+5
2
+85
+6
°C
V
Positive DC Voltage (VC)
Positive DC Current (Ic)
32
mA
V
Positive DC Current Mirror Voltage (VB)
Positive DC Current Mirror Current (Ib)
+3
0.9
+6
2.6
mA
3.4 Sequencing Requirements
There is no sequencing required to power up or power down the amplifier.
Amplifier must have an output load connected when operating with a VC voltage greater
than +5V.
2 Maximum recommended operating current conditions without RF input applied. Please see
typical performance plots on page 10 for relationship between RF input power and DC current
draw.
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APM-6849
3.5 Electrical Specifications
The electrical specifications apply at TA=+25°C in a 50Ω system.
Min and Max limits apply only to our connectorized units and are guaranteed at TA=+25°C. Die are 100% DC tested and RF tested on a per
lot basis.
Test
Conditions
Frequency
Parameter
Min
Typical
Units
5V/5V Bias,
Input Driver
(See
2 GHz – 20 GHz
20 GHz – 29 GHz
+19
+21
+19
Psat3
dBm
footnote)
2 GHz – 20 GHz
20 GHz – 29 GHz
9
11
10
Small Signal Gain
2 GHz – 20 GHz
20 GHz – 29 GHz
15
8
Input Return Loss
5V/5V
dB
bias,
-25 dBm
Input Power
2 GHz – 20 GHz
20 GHz – 29 GHz
15
11
5
Output Return Loss
Noise Figure
2 GHz – 26.5 GHz
2 GHz – 29 GHz
Reverse Isolation
41
5V/4V
5V/5V
5V/6V
5V/4V
5V/5V
5V/6V
-
-
-
-
-
-
13
21
Collector Current4, Ic
32
mA
1.5
2.0
2.6
Current Mirror Current, Ib
Input IP3 (IIP3)
5V/5V
bias, -15 dBm
Input Power
+10
+21
2 GHz – 29 GHz
2 GHz – 29 GHz
Output IP3 (OIP3)
dBm
2 GHz – 20 GHz
20 GHz – 29 GHz
+20
+15
Output P
1dB
5V/5V bias
Input Power for Saturation
2 GHz – 29 GHz
+10
dBm
5V/5V bias
5V/5V bias,
+9 dBm
2 – 29 GHz
dBc/Hz
Phase Noise @ 10 kHz Offset
-170
Input power
3
Saturated Output Power tested with two APM-6849PA connected in series; +6 dBm RF input
power, corresponding to ~+16 dBm into DUT.
4
Bias conditions for Ic and Ib tested with no RF input power. See section 3.6 for DC current vs.
RF power. Bias conditions presented as VC/VB.
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APM-6849
3.6 APM-6849CH Typical Performance Plots5
Small Signal Gain (dB) vs. Frequency, VC = 6V
Saturated Output Power (dBm) vs. Frequency, VC = 6 V
16
30
25
20
15
10
5
14
12
10
8
VB = 3V
VB = 4 V
VB = 5 V
VB = 6 V
6
4
2
0
VB = 3V, Ic = 8 mA
VB = 4V, Ic = 14 mA
VB = 5V, Ic = 22 mA
VB = 6V, Ic = 35 mA
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Small Signal Gain (dB) vs. Frequency, VC = 5V
Saturated Output Power (dBm) vs. Frequency, VC = 5 V
30
16
14
12
10
8
25
20
15
10
5
6
VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V
VB = 3V, Ic = 8 mA
VB = 4V, Ic = 14 mA
VB = 5V, Ic = 22 mA
VB = 6V, Ic = 35 mA
4
2
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
Frequency (GHz)
Frequency (GHz)
Reverse Isolation (dB) vs. Frequency, VC = 5V
Saturated Output Power (dBm) vs. Frequency, VC = 4 V
30
25
20
15
10
5
0
-10
-20
-30
-40
-50
-60
-70
VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V
VB = 3V, Ic = 8 mA
VB = 4V, Ic = 14 mA
VB = 5V, Ic = 22 mA
VB = 6V, Ic = 35 mA
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
Output Return Loss (dB) vs. Frequecny, VC = 5V
Input Return Loss (dB) vs. Frequency, VC = 5V
0
0
-5
-5
-10
-10
-15
-20
-25
-30
-15
-20
-25
-30
VB = 3V, Ic = 8 mA
VB = 4V, Ic = 14 mA
VB = 5V, Ic = 22 mA
VB = 6V, Ic = 35 mA
VB = 3V, Ic = 8 mA
VB = 4V, Ic = 14 mA
VB = 5V, Ic = 22 mA
VB = 6V, Ic = 35 mA
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
5 Probe tested on chip
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APM-6849
3.7 APM-6849PA Typical Performance Plots
Phase Noise (dBc/Hz) vs. Offset Frequency; 4 GHz Carrier
Frequency, 6V/6V Bias, +15 dBm Input Power
Saturated Output Power (dBm) vs. Frequency, VC = 6 V
30
25
20
15
10
5
-120
-130
-140
-150
-160
-170
-180
-190
-170 dBc/Hz @
10 kHz Offset
VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V
0
10
100
1000
10000
100000
1000000
0
5
10
15
20
25
30
35
Frequency (GHz)
Offset Frequency (Hz)
Saturated Output Power (dBm) vs. Frequency, VC = 5 V
Small Signal Gain (dB) vs. Frequency, VC = 5 V
30
25
20
15
10
5
16
14
12
10
8
6
VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V
VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 14 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 32 mA
4
2
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
Saturated Output Power (dBm) vs. Frequency, VC = 4 V
Small Signal Gain (dB) vs. Frequency, VC = 6 V
30
25
20
15
10
5
16
14
12
10
8
6
VB = 3 V
VB = 4 V
VB = 5 V
VB = 6 V
VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 15 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 33 mA
4
2
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
Input Return Loss (dB) vs. Frequency, VC = 5 V
Output Return Loss (dB) vs. Frequency, VC = 5V
0
0
-5
VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 14 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 32 mA
-5
-10
-15
-20
-25
-30
-10
-15
-20
-25
-30
VB = 3 V, Ic = 8 mA
VB = 4 V, Ic = 14 mA
VB = 5 V, Ic = 21 mA
VB = 6 V, Ic = 32 mA
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
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APM-6849
Saturated Output Power (dBm) Over Temperature, 5V/5V Bias
Small Signal Gain (dB) Over Temperature, 5V/5V Bias
25
20
15
10
5
14
12
10
8
-40C
25C
85C
0C
-40C
65C
0C
25C
6
65C
4
85C
2
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
IIP3 (dBm), -15 dBm Input Power
OIP3 (dBm), -15 dBm Input Power
30
30
25
20
15
10
5
25
20
15
10
5
5V/5V
6V/6V
5V/5V
6V/6V
0
0
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
Gain, Output Power, and PAE vs. Input Power, 5V/5V, 5 GHz
Gain, Output Power, and PAE vs. Input Power, 5V/5V, 15 GHz
30
25
20
15
10
5
30
Output Power (dBm)
Gain (dB)
PAE (%)
Output Power (dBm)
Gain (dB)
PAE (%)
25
20
15
10
5
0
0
-10
-5
0
5
10
15
20
-10
-5
0
5
10
15
20
Input Power (dBm)
Input Power (dBm)
Ic, Ib (mA) vs. VB (VC = 5 V)
Ic (mA) vs. RF Input Power, 5V/5V Bias
5 GHz
15 GHz
28 GHz
35
3.5
3
130
30
25
20
15
10
5
110
90
70
50
30
10
2.5
2
Ic
Ib
1.5
1
Ic
Ib
0.5
0
0
-20
-15
-10
-5
0
5
10
15
3
3.5
4
4.5
5
5.5
6
RF Input Power (dBm)
VB (V)
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APM-6849
Harmonic Response (dBm), 5V/5V Bias, +10 dBm Input Power
Output P1dB (dBm) vs. Frequency, 5V/5V Bias
30
25
20
15
10
5
30
25
20
15
10
5
0
Fundamental
2nd Harmonic
3rd Harmonic
4th Harmonic
5th Harmonic
-5
-10
-15
-20
0
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
Frequency (GHz)
Frequency (GHz)
Noise Figure (dB) vs. Frequency, 5V/5V Bias
12
10
8
6
4
2
0
0
5
10
15
20
25
Frequency (GHz)
3.8 Time Domain Plots6
5 GHz, +10 dBm Pin, 5V/5V Bias
10 GHz, +10 dBm Pin, 5V/5V Bias
6
Fast rise time is desirable for linear Marki T3 mixer operation.
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APM-6849
3.9 Typical Performance Plots of Marki Mixers Driven With APM-6849PA
Conv. Loss (dB) of Marki MM1-0212L (Config. A) using two APM-
6849PA as LO Driver; 5V/5V Bias, +0 dBm Amp. Input; 100 MHz IF
Conv. Loss (dB) of Marki MM1-0212H (Config. A); two series APM-
6849PA as LO Driver; 5V/5V Bias, +0 dBm Amp. Input; 100 MHz IF
0
-2
0
-2
Downconversion
Upconversion
Downconversion
Upconversion
-4
-4
-6
-6
-8
-8
-10
-12
-14
-16
-18
-20
-10
-12
-14
-16
-18
-20
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
Input RF Frequency (GHz)
Input RF Frequency (GHz)
Conv. Loss (dB) of Marki MM1-0212S (Config. A); two series APM-
6849PA as LO Driver; 5V/5V Bias, +0 dBm Amp. Input; 100 MHz IF
Conv. Loss (dB) of Marki MM1-1240S (Config. A); two series APM-
6849PA as LO Driver; 5V/5V Bias, +6 dBm Amp. Input; 100 MHz IF
0
-2
-4
-6
-8
0
Downconversion
Upconversion
Downconversion
Upconversion
-2
-4
-6
-8
-10
-10
-12
-14
-16
-18
-20
-12
-14
-16
-18
-20
10
0
12
14
16
18
20
22
24
0
2
4
6
8
10
12
14
Input RF Frequency (GHz)
Input RF Frequency (GHz)
Conv. Loss (dB) of Marki MM1-0626S (Config. A); two series APM-
6849PA as LO Driver; 5V/5V Bias, +6 dBm Amp. Input; 100 MHz IF
Conv. Loss (dB) of Marki MM1-0530L (Config. A) using two APM-
6849PA as LO Driver; 5V/5V Bias, +0 dBm Amp. Input; 1 GHz IF
0
-2
-4
-6
-8
Downconversion
Upconversion
-2
Downconversion
Upconversion
-4
-6
-8
-10
-12
-14
-16
-18
-20
-10
-12
-14
-16
-18
-20
5
7
9
11
13
15
17
19
21
23
25
0
5
10
15
20
25
30
Input RF Frequency (GHz)
Input RF Frequency (GHz)
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APM-6849
4. Application Information
4.1 APM-6849CH Application Circuit
Below is the recommended application circuit for the APM-6849CH.
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APM-6849
5. Mechanical Data
5.1 APM-6849CH Outline Drawing
5.2 APM-6849PA Package Outline Drawing
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