MM1-0832H [MARKIMICROWAVE]

GaAs MMIC Double Balanced Mixer;


型号：	MM1-0832H
厂家：	Marki
描述：	GaAs MMIC Double Balanced Mixer
文件：	总13页 (文件大小：838K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GaAs MMIC Double Balanced Mixer

1. Device Overview

MM1-0832H

1.1 General Description

Die

The MM1-0832H is a GaAs MMIC double balanced mixer that is

designed for and operates at X through K bands. MM1-0832H is

a high linearity K band mixer that works well as both an up and

down converter. This mixer offers low conversion loss and high

LO to RF isolations over a broadband X to K band. The sister

component MM1-0832L is recommended for low power

applications. The MM1-0832H is available as both a wire

bondable die and as a connectorized module. For a list of

recommended LO driver amps for all mixers and IQ mixers, see

here.

Module

1.2 Features

1.3 Applications

▪ Low cost K band mixer

▪ Broadband Performance

▪ RoHS Compliant

▪ Mobile test and measurement

equipment

▪ Radar and satellite

Communications

▪ 5G Transceivers

1.4 Functional Block Diagram

1.5 Part Ordering Options¹

Part

Product

Lifecycle

Export

Classification

Description

Number

Package Green Status

MM1-0832HCH-2

MM1-0832HS

Wire bondable die

Active

EAR99

RoHS

Connectorized

module

Active

Refer to our website for a list of definitions for terminology presented in this table.

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MM1-0832H

3.5 Electrical Specifications .................. 5

3.6 Typical Performance Plots ............... 6

3.6.1 Typical Performance Plots: IP3 .. 8

Table of Contents

1. Device Overview ............................... 1

1.1 General Description........................ 1

1.2 Features ....................................... 1

1.3 Applications................................... 1

1.4 Functional Block Diagram ................ 1

1.5 Part Ordering Options..................... 1

2. Port Configurations and Functions ...... 3

2.1 Port Diagram................................. 3

2.2 Port Functions............................... 3

3. Specifications ................................... 4

3.1 Absolute Maximum Ratings.............. 4

3.2 Package Information ....................... 4

3.3 Recommended Operating Conditions . 4

3.4 Sequencing Requirements ............... 4

3.6.2 Typical Performance Plots: LO

Harmonic Isolation............................. 9

3.6.3 Typical Spurious Performance:

Down-Conversion............................ 10

3.6.4 Typical Spurious Performance: Up-

Conversion..................................... 10

4. Die Mounting Recommendations ....... 11

4.1 Mounting and Bonding

Recommendations .............................. 11

4.2 Handling Precautions .................... 11

4.3 Bonding Diagram.......................... 12

5. Mechanical Data............................. 13

5.1 CH Package Outline Drawing ......... 13

5.2 S Package Outline Drawing............ 13

Revision History

Revision Code

Comment

Datasheet Initial Release

Revision Date

October 2018

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MM1-0832H

2. Port Configurations and Functions

2.1 Port Diagram

A top-down view of the MM1-0832H’s CH package outline drawing is shown below. The

MM1-0832H has the input and output ports given in Port Functions. The MM1-0832H

can be used in either an up or down conversion. For configuration A, input the LO into

port 1, use port 3 for the RF, and port 2 for the IF. For configuration B, input the LO

into port 3, use port 1 for the RF, and port 2 for the IF.

2.2 Port Functions

Equivalent Circuit

Port

Function

Description

for Package

(Configuration A)

Port 1 is DC open for the CH and S

packages.

Port 1

(Configuration B)

Port 2 is diode connected for the CH

and S packages.

Port 2

Port 3

(Configuration A)

Port 3 is DC open for the CH and S

packages.

(Configuration B)

CH package ground path is provided

through the substrate and ground bond

pads. S package ground provided

through metal housing and outer coax

conductor.

GND

Ground

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MM1-0832H

3. Specifications

3.1 Absolute Maximum Ratings

The Absolute Maximum Ratings indicate limits beyond which damage may occur to the

device. If these limits are exceeded, the device may be inoperable or have a reduced

lifetime.

Parameter

Maximum Rating

Units

Port 1 DC Current

Port 2 DC Current

N/A

dBm

°C

Power Handling, at any Port

Operating Temperature

Storage Temperature

+30

-55 to +100

-65 to +125

ºC

3.2 Package Information

Parameter

Details

Rating

ESD

Human Body Model (HBM), per MIL-STD-750, Method 1020

S Package

Weight

12 g

3.3 Recommended Operating Conditions

The Recommended Operating Conditions indicate the limits, inside which the device should

be operated, to guarantee the performance given in Electrical Specifications Operating

outside these limits may not necessarily cause damage to the device, but the

performance may degrade outside the limits of the electrical specifications. For limits,

above which damage may occur, see Absolute Maximum Ratings.

Min Nominal Max Units

T_A, Ambient Temperature

LO Input Power

-55

+25

+100

+20

°C

+11

dBm

3.4 Sequencing Requirements

There is no requirement to apply power to the ports in a specific order. However, it is

recommended to provide a 50Ω termination to each port before applying power. This is a

passive diode mixer that requires no DC bias.

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MM1-0832H

3.5 Electrical Specifications

The electrical specifications apply at T_A=+25°C in a 50Ω system. Typical data shown is or

the connectorized S package mixer used in the forward direction with a +15 dBm sine

wave input. Specifications shown for configuration A (B).

Min and Max limits apply only to our connectorized units and are guaranteed at T_A=+25°C. All bare die are 100% DC tested and visually

inspected.

Parameter

Test Conditions

Min Typical

Max

Units

RF (Port 3) Frequency Range

LO (Port 1) Frequency Range

I (Port 2) Frequency Range

GHz

RF/LO = 8 - 32 GHz

I = DC - 4 GHz

RF/LO = 8 - 32 GHz

I = 3 - 12 GHz

RF/LO = 8 - 32 GHz

I = DC – 0.2 GHz

7.6

(9)

9.5

(11)

9.5

(10.5)

Conversion Loss (CL)²

Noise Figure (NF)³

LO to RF

RF/LO = 8 - 32 GHz

IF/LO = 8 - 32 GHz

RF/IF = 8 - 32 GHz

Isolation

LO to IF

RF to IF

RF/LO = 8 - 32 GHz

I = DC – 0.2 GHz

+22.8

(+23.7)

Input IP3 (IIP3)

dBm

Input 1 dB Gain Compression

Point (P1dB)

(+11)

Measured as a down converter to a fixed 91MHz IF.

Mixer Noise Figure typically measures within 0.5 dB of conversion loss for IF frequencies greater

than 5 MHz.

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3.6 Typical Performance Plots

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3.6.1 Typical Performance Plots: IP3

MM1-0832H

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MM1-0832H

3.6.2 Typical Performance Plots: LO Harmonic Isolation

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3.6.3 Typical Spurious Performance: Down-Conversion

MM1-0832H

Typical spurious data is provided by selecting RF and LO frequencies (± m*LO ± n*RF) within the

RF/LO bands, to create a spurious output within the IF band. The mixer is swept across the full

spurious band and the mean is calculated. The numbers shown in the table below are for a -10

dBm RF input. Spurious suppression is scaled for different RF power levels by (n-1), where “n” is

the RF spur order. For example, the 2RF x 2LO spur is 70 dBc for a -10 dBm input, so a -20

dBm RF input creates a spur that is (2-1) x (-10 dB) lower, or 80 dBc. Data is shown for the

frequency plan in 3.6 Typical Performance.

Typical Down-conversion spurious suppression (dBc): Config A (B)

-10 dBm

0xLO

1xLO

2xLO

3xLO

4xLO

5xLO

RF Input

1xRF

27 (24)

77 (86)

100 (104)

121 (125)

N/A

Reference

61 (48)

27 (37)

70 (72)

14 (14)

62 (53)

33 (40)

69 (71)

N/A

2xRF

58 (54)

3xRF

61 (62)

82 (90)

71 (75)

74 (91)

67 (73)

4xRF

98 (94)

110 (111)

115 (123)

109 (104)

119 (126)

108 (113)

120 (125)

108 (102)

118 (121)

5xRF

115 (108)

3.6.4 Typical Spurious Performance: Up-Conversion

Typical spurious data is taken by mixing an input within the IF band, with LO frequencies

(± m*LO ± n*IF), to create a spurious output within the RF output band. The mixer is swept

across the full spurious output band and the mean is calculated. The numbers shown in the table

below are for a -10 dBm IF input. Spurious suppression is scaled for different IF input power levels

by (n-1), where “n” is the IF spur order. For example, the 2IFx1LO spur is typically 68 dBc for a -

10 dBm input with a sine-wave LO, so a -20 dBm IF input creates a spur that is (2-1) x (-10 dB)

lower, or 78 dBc. Data is shown for the frequency plan in 3.6 Typical Performance.

Typical Up-conversion spurious suppression (dBc): Config A (B)

-10 dBm

0xLO

1xLO

2xLO

3xLO

4xLO

5xLO

RF Input

1xIF

28 (24)

68 (60)

Reference

68 (71)

28 (38)

58 (51)

15 (12)

60 (73)

32 (39)

51 (49)

18 (24)

59 (77)

2xIF

3xIF

86 (95)

66 (70)

76 (88)

68 (67)

71 (86)

53 (55)

4xIF

111 (100)

110 (129)

108 (109)

109 (115)

97 (93)

102 (113)

104 (105)

92 (100)

118 (125)

103 (111)

106 (106)

5xIF

116 (129)

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4. Die Mounting Recommendations

4.1 Mounting and Bonding Recommendations

Marki MMICs should be attached directly to a ground plane with conductive epoxy. The

ground plane electrical impedance should be as low as practically possible. This will

prevent resonances and permit the best possible electrical performance. Datasheet

performance is only guaranteed in an environment with a low electrical impedance ground.

Mounting - To epoxy the chip, apply a minimum amount of conductive epoxy to the

mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip.

Cure epoxy according to manufacturer instructions.

Wire Bonding - Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire.

Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding

force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use

the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be

started on the chip and terminated on the package or substrate. All bonds should be as

short as possible <0.31 mm (12 mils).

Circuit Considerations – 50 Ω transmission lines should be used for all high frequency

connections in and out of the chip. Wirebonds should be kept as short as possible, with

multiple wirebonds recommended for higher frequency connections to reduce parasitic

inductance. In circumstances where the chip more than .001” thinner than the

substrate, a heat spreading spacer tab is optional to further reduce bondwire length and

parasitic inductance.

4.2 Handling Precautions

General Handling

Chips should be handled with care using tweezers or a vacuum collet. Users should take

precautions to protect chips from direct human contact that can deposit contaminants,

like perspiration and skin oils on any of the chip's surfaces.

Static Sensitivity

GaAs MMIC devices are sensitive to ESD and should be handled, assembled, tested, and

transported only in static protected environments.

Cleaning and Storage: Do not attempt to clean the chip with a liquid cleaning system or

expose the bare chips to liquid. Once the ESD sensitive bags the chips are stored in are

opened, chips should be stored in a dry nitrogen atmosphere.

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4.3 Bonding Diagram

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5. Mechanical Data

5.1 CH Package Outline Drawing

1. CH Substrate material is 0.004 in thick GaAs.

2. I/O trace finish is 4.2 microns Au. Ground plane finish is 5 microns Au.

5.2 S Package Outline Drawing

Marki Microwave reserves the right to make changes to the product(s) or information contained herein without notice.

Marki Microwave makes no warranty, representation, or guarantee regarding the suitability of its products for any

particular purpose, nor does Marki Microwave assume any liability whatsoever arising out of the use or application of any

product.

MM1-0832H [MARKIMICROWAVE]

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