C527RT290-0203 [MARKTECH]

RazerThin LEDs; RazerThin LED灯


型号：	C527RT290-0203
厂家：	MARKTECH CORPORATE
描述：	RazerThin LEDs RazerThin LED灯
文件：	总4页 (文件大小：229K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

RazerThin LEDs

CxxxRT290-S0200

Cree’s RazerThin LEDs are a new generation of solid-state LED emitters that combine highly efﬁcient InGaN materials

with Cree’s proprietary G•SiC® substrate to deliver superior price/performance for high-intensity blue and green

LEDs. These vertically structured LED chips are approximately 95 microns in height and require a low forward

voltage. Cree’s RazerThin series chips have the ability to withstand 1000V ESD. Applications for RazerThin LEDs

include next-generation keypad backlighting where sub-miniaturization and thinner form factors are required.

FEATURES

APPLICATIONS

•

Thin 95 μm Chip

Reduced Forward Voltage

3.2 V Typical at 20 mA

RazerThin LED Performance

•

Mobile Phone Key Pads

–

White LEDs

Blue LEDs

–

•

Green LEDs

–

460nm - 3.8-11.1 mW

470nm - 3.4-10.4 mW

505nm - 2.0-6.5 mW

527nm - 1.7-6.0 mW

•

Cellular Phone LCD Backlighting

Digital Camera Flash For Mobile Appliances

Automotive Dashboard Lighting

LED Video Displays

•

Single Wire Bond Structure

Class 2 ESD Rating

Audio Product Display Lighting

CxxxRT290-S0200 Chip Diagram

Top View

Bottom View

Die Cross Section

G•SiC LED Chip

270 x 270 μm

InGaN

Anode (+)

Mesa (junction)

246 x 246 μm

SiC Substrate

h = 95 μm

Backside

Metallization

Gold Bond Pad

110 μm Diameter

Cathode (-)

Subject to change without notice.

www.cree.com

ꢀ

Maximum Ratings at T_A= 25°C^{Notes ꢀ&3}

DC Forward Current

CxxxRT290-S0200

30 mA

Peak Forward Current (1/10 duty cycle @ 1kHz)

LED Junction Temperature

100 mA

125°C

Reverse Voltage

5 V

Operating Temperature Range

Storage Temperature Range

-40°C to +100°C

1000 V

Note 2

Electrostatic Discharge Threshold (HBM)

Note 2

Electrostatic Discharge Classiﬁcation (MIL-STD-883E)

Class 2

Note 3

Typical Electrical/Optical Characteristics at T_A= 25°C, If = 20 mA

Part Number

Reverse Current

[I(Vr=5V), μA]

Forward Voltage (V_f, V)

Min.

Typ.

3.2

Max.

C460RT290-S0200

C470RT290-S0200

C505RT290-S0200

C527RT290-S0200

2.7

3.7

Mechanical Speciﬁcations

Description

CxxxRT290-S0200

Dimension

Tolerance

P-N Junction Area (μm)

Top Area (μm)

246 x 246

270 x 270

± 25

± 15

± 20

± 0.5

± 10

Bottom Area (μm)

Chip Thickness (μm)

Au Bond Pad Diameter (μm)

Au Bond Pad Thickness (μm)

Back Contact Metal Width (μm)

110

1.2

Notes:

1. Maximum ratings are package dependent. The above ratings were determined using a T-1 3/4 package (with Hysol OS4000 epoxy)

for characterization. Seller makes no representations regarding ratings for packages other than the T-1 3/4 package used by Seller.

The forward currents (DC and Peak) are not limited by the G•SiC die but by the effect of the LED junction temperature on the

package. The junction temperature limit of 125°C is a limit of the T-1 3/4 package; junction temperature should be characterized

in a speciﬁc package to determine limitations. Assembly processing temperature must not exceed 325°C (< 5 seconds).

2. Product resistance to electrostatic discharge (ESD) is measured by simulating ESD using a rapid avalanche energy test (RAET).

The RAET procedures are designed to approximate the maximum ESD ratings shown. Seller gives no other assurances regarding

the ability of Products to withstand ESD.

3. All products conform to the listed minimum and maximum speciﬁcations for electrical and optical characteristics when assembled

and operated at 20 mA within the maximum ratings shown above. Efﬁciency decreases at higher currents. Typical values given

are the average values expected by Seller in large quantities and are provided for information only. Seller gives no assurances

products shipped will exhibit such typical ratings. All measurements were made using lamps in T-1 3/4 packages (with Hysol

OS4000 epoxy). Dominant wavelength measurements taken using Illuminance E.

4. Speciﬁcations are subject to change without notice.

Cree, Inc.

4600 Silicon Drive

the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

CPR3CL Rev. B

Standard Bins for CxxxRT290-S0200

All LED chips are sorted onto die sheets according to the bins shown below. All dominant wavelength and radiant ﬂux

values are speciﬁed at If = 20 mA.

C460RT290-S0200

11.1 mW

C460RT290-0205

C460RT290-0201

C460RT290-0206

C460RT290-0202

C460RT290-0207

C460RT290-0203

C460RT290-0208

C460RT290-0204

7.2 mW

3.8 mW

455 nm

457.5 nm

460 nm

462.5 nm

465 nm

Dominant Wavelength

C470RT290-S0200

10.4 mW

6.7 mW

3.4 mW

C470RT290-0205

C470RT290-0201

C470RT290-0206

C470RT290-0207

C470RT290-0203

C470RT290-0208

C470RT290-0204

C470RT290-0202

465 nm

467.5 nm

470 nm

472.5 nm

475 nm

Dominant Wavelength

C505RT290-S0200

6.5 mW

C505RT290-0203

C505RT290-0204

4.0 mW

C505RT290-0201

C505RT290-0202

2.0 mW

500 nm

505 nm

510 nm

Dominant Wavelength

C527RT290-S0200

6.0 mW

C527RT290-0204

C527RT290-0201

C527RT290-0205

C527RT290-0206

C527RT290-0203

3.5 mW

C527RT290-0202

1.7 mW

520 nm

525 nm

530 nm

535 nm

Dominant Wavelength

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

USA Tel: +1.919.313.5300

www.cree.com

CPR3CL Rev. B

Characteristic Curves

These are representative measurements for the RazerThin products. Actual curves will vary slightly for the various

radiant ﬂux and dominant wavelength bins.

Wavelength Shift vs Forward Current

Forward Current vs. Forward Voltage

12.00

10.00

8.00

460nm

527nm

505nm

6.00

4.00

2.00

0.00

-2.00

-4.00

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

If (mA)

Vf (V)

Relative Intensity vs Forward Current

Relative Intensity vs Peak Wavelength

100

140

120

100

400

500

600

Wavelength (nm)

If(mA)

Cree, Inc.

4600 Silicon Drive

Durham, NC 27703

USA Tel: +1.919.313.5300

www.cree.com

the Cree logo, G•SiC and RazerThin are registered trademarks of Cree, Inc.

CPR3CL Rev. B

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