DS1210S/T&R [MAXIM]

Power Supply Support Circuit, Fixed, 3 Channel, CMOS, PDSO16, 0.300 INCH, SOIC-16;
DS1210S/T&R
型号: DS1210S/T&R
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
描述:

Power Supply Support Circuit, Fixed, 3 Channel, CMOS, PDSO16, 0.300 INCH, SOIC-16

光电二极管
文件: 总8页 (文件大小:334K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
19-6294; Rev 6/12  
DS1210  
Nonvolatile Controller Chip  
FEATURES  
. Converts CMOS RAMs into Nonvolatile  
Memories  
PIN ASSIGNMENT  
VCCO  
1
8
VCCI  
VBAT2  
CEO  
CE  
VBAT1  
TOL  
2
3
4
7
6
5
. Unconditionally Write Protects when VCC is  
Out-of-Tolerance  
. Automatically Switches to Battery when  
Power-Fail Occurs  
GND  
DS1210 8-pin PDIP (300 mils)  
. Space-Saving 8-Pin PDIP or 16-Pin SO  
Packages  
1
2
3
4
5
6
7
8
NC  
VCCO  
NC  
NC  
16  
15  
14  
13  
12  
11  
10  
9
. Consumes <100nA of Battery Current  
. Tests Battery Condition on Power up  
. Provides for Redundant Batteries  
. Optional 5% or 10% Power-Fail Detection  
. Low Forward Voltage Drop on the VCC  
Switch  
VCCI  
NC  
VBAT1  
NC  
VBAT2  
NC  
TOL  
CEO  
NC  
NC  
GND  
CE  
. Optional Industrial (N) Temperature Range of  
-40°C to +85°C  
DS1210S 16-pin SO (300 mils)  
PIN DESCRIPTION  
VCCO  
VBAT1  
TOL  
- RAM Supply  
- + Battery 1  
- Power Supply Tolerance  
- Ground  
GND  
CE  
- Chip Enable Input  
CEO  
VBAT2  
VCCI  
NC  
- Chip Enable Output  
- + Battery 2  
- + Supply  
- No Connect  
DESCRIPTION  
The DS1210 Nonvolatile Controller Chip is a CMOS circuit which solves the application problem of  
converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-of-tolerance  
condition. When such a condition is detected, chip enable is inhibited to accomplish write protection and  
the battery is switched on to supply the RAM with uninterrupted power. Special circuitry uses a low-  
leakage CMOS process which affords precise voltage detection at extremely low battery consumption.  
The 8-pin DIP package keeps PC board real estate requirements to a minimum. By combining the  
DS1210 Nonvolatile Controller Chip with a CMOS memory and batteries, nonvolatile RAM operation  
can be achieved.  
1 of 8  
DS1210  
OPERATION  
The DS1210 nonvolatile controller performs five circuit functions required to battery back up a RAM.  
First, a switch is provided to direct power from the battery or the incoming supply (VCCI) depending on  
which is greater. This switch has a voltage drop of less than 0.3V.  
The second function which the nonvolatile controller provides is power-fail detection. The DS1210  
constantly monitors the incoming supply. When the supply goes out of tolerance, a precision comparator  
detects power-fail and inhibits chip enable (CEO ).  
The third function of write protection is accomplished by holding the CEO output signal to within 0.2  
volts of the VCCI or battery supply. If CE input is low at the time power-fail detection occurs, the CEO  
output is kept in its present state until CE is returned high. The delay of write protection until the current  
memory cycle is completed prevents the corruption of data. Power-fail detection occurs in the range of  
4.75 volts to 4.5 volts with the tolerance (TOL) pin grounded. If TOL in connected to VCCO, then power-  
fail detection occurs in the range of 4.5 volts to 4.25 volts. During nominal supply conditions CEO will  
follow CE with a maximum propagation delay of 20ns.  
The fourth function the DS1210 performs is a battery status warning so that potential data loss is avoided.  
Each time that the circuit is powered up the battery voltage is checked with a precision comparator. If the  
battery voltage is less than 2.0 volts, the second memory cycle is inhibited. Battery status can, therefore,  
be determined by performing a read cycle after power-up to any location in memory, verifying that  
memory location content. A subsequent write cycle can then be executed to the same memory location  
altering the data. If the next read cycle fails to verify the written data, then the batteries are less than 2.0V  
and data is in danger of being corrupted.  
The fifth function of the nonvolatile controller provides for battery redundancy. In many applications,  
data integrity is paramount. In these applications it is often desirable to use two batteries to ensure  
reliability. The DS1210 controller provides an internal isolation switch which allows the connection of  
two batteries. During battery backup operation the battery with the highest voltage is selected for use. If  
one battery should fail, the other will take over the load. The switch to a redundant battery is transparent  
to circuit operation and to the user. A battery status warning will occur when the battery in use falls below  
2.0 volts. A grounded VBAT2 pin will not activate a battery-fail warning. In applications where battery  
redundancy is not required, a single battery should be connected to the BAT1 pin, and the BAT2 battery  
pin must be grounded. The nonvolatile controller contains circuitry to turn off the battery backup. This is  
to maintain the battery(s) at its highest capacity until the equipment is powered up and valid data is  
written to the SRAM. While in the freshness seal mode the CEO and VCCO will be forced to VOL. When  
the batteries are first attached to one or both of the VBAT pins, VCCO will not provide battery back-up until  
VCCI exceeds VCCTP, as set by the TOL pin, and then falls below VBAT  
.
Figure 1 shows a typical application incorporating the DS1210 in a microprocessor-based system. Section  
A shows the connections necessary to write protect the RAM when VCC is less than 4.75 volts and to back  
up the supply with batteries. Section B shows the use of the DS1210 to halt the processor when VCC is  
less than 4.75 volts and to delay its restart on power-up to prevent spurious writes.  
2 of 8  
DS1210  
SECTION A - BATTERY BACKUP Figure 1  
BATTERY BACKUP CURRENT DRAIN EXAMPLE  
CONSUMPTION  
DS1210 IBAT  
RAM ICC02  
Total Drain  
100 nA  
10 µA  
10.1 µA  
SECTION B - PROCESSOR RESET  
3 of 8  
DS1210  
ABSOLUTE MAXIMUM RATINGS  
Voltage Range on Any Pin Relative to Ground  
Operating Temperature Range  
-0.3V to +7.0V  
0°C to +70°C, -40°C to +85°C for N parts  
Storage Temperature Range  
Soldering Temperature (reflow, SO)  
Lead Temperature (soldering, 10s)  
-55°C to +125°C  
+260°C  
+300°C  
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the  
operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of  
time may affect reliability.  
PACKAGE THERMAL CHARACTERISTICS (Note 1)  
PDIP  
Junction-to-Ambient Thermal Resistance (θJA).…………………...…………………………...….110°C/W  
Junction-to-Case Thermal Resistance (θJC)…………………………………………………………40°C/W  
SO  
Junction-to-Ambient Thermal Resistance (θJA).…………………………………………………….70°C/W  
Junction-to-Case Thermal Resistance (θJC)…………………………………………………………23°C/W  
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board for the SO.  
Note 1:  
For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.  
RECOMMENDED OPERATING CONDITIONS  
(Note 10)  
UNITS NOTES  
PARAMETER  
SYMBOL  
VCCI  
MIN  
4.75  
4.5  
TYP  
5.0  
5.0  
MAX  
5.5  
5.5  
VCC+0.3  
+0.8  
4.0  
TOL = GND Supply Voltage  
TOL = VCCO Supply Voltage  
Logic 1 Input  
V
V
V
V
V
2
2
2
2
2, 3  
VCCI  
VIH  
2.2  
Logic 0 Input  
Battery Input  
VIL  
VBAT1  
-0.3  
2.0  
,
VBAT2  
DC ELECTRICAL CHARACTERISTICS  
(Note 10; VCCI = 4.75 to 5.5V, TOL = GND)  
(VCCI = 4.5 to 5.5V, TOL = VCCO  
)
PARAMETER  
Supply Current  
Supply Voltage  
Supply Current  
Input Leakage  
Output Leakage  
SYMBOL  
ICCI  
MIN  
TYP  
MAX  
UNITS NOTES  
5
mA  
V
mA  
µA  
µA  
mA  
4
2
5
VCCO  
ICCO1  
IIL  
ILO  
IOH  
VCC-0.2  
80  
+1.0  
+1.0  
-1.0  
-1.0  
-1.0  
6
6
CEO Output @ 2.4V  
IOL  
4.0  
mA  
CEO Output @ 0.4V  
VCC Trip Point (TOL=GND)  
VCCTP  
VCCTP  
VOHL  
4.50  
4.25  
VBAT-0.2  
4.62  
4.37  
4.74  
4.49  
V
V
V
2
2
8
VCC Trip Point (TOL=VCCO  
)
CEO Output  
VBAT1 or VBAT2  
Battery Current  
Battery Backup Current  
@ VCCO = VBAT – 0.3V  
IBAT  
100  
50  
nA  
µA  
3, 4  
7, 8  
ICCO2  
4 of 8  
DS1210  
CAPACITANCE  
PARAMETER  
Input Capacitance  
Output Capacitance  
(TA = +25°C)  
UNITS NOTES  
SYMBOL  
CIN  
MIN  
TYP  
MAX  
5
7
pF  
pF  
COUT  
AC ELECTRICAL CHARACTERISTICS  
(Note 10; VCCI = 4.75V to 5.5V, TOL = GND)  
(VCCI = 4.5V to 5.5V, TOL = VCCO  
)
PARAMETER  
SYMBOL  
MIN  
TYP  
MAX  
UNITS NOTES  
tPD  
5
10  
20  
ns  
6
CE Propagation Delay  
CE High to Power-Fail  
tPF  
0
ns  
AC ELECTRICAL CHARACTERISTICS  
(Note 10; VCCI = 4.75V, TOL = GND)  
(VCCI < 4.5, TOL = VCCO  
)
Recovery at Power Up  
tREC  
tF  
tFB  
tR  
2
300  
10  
0
80  
125  
ms  
µs  
µs  
µs  
VCC Slew Rate Power-Down  
VCC Slew Rate Power-Down  
VCC Slew Rate Power-Up  
tCE  
1.5  
µs  
9
CE Pulse Width  
NOTES:  
2. All voltages are referenced to ground.  
3. Only one battery input is required. Unused battery inputs must be grounded.  
4. Measured with VCCO and CEO open.  
5. ICC01 is the maximum average load which the DS1210 can supply to the memories.  
6. Measured with a load as shown in Figure 2.  
7. ICC02 is the maximum average load current which the DS1210 can supply to the memories in the battery backup mode.  
8. tCE max must be met to ensure data integrity on power loss.  
9. CEO can only sustain leakage current in the battery backup mode.  
10. All AC and DC electrical characteristics are valid for the full temperature range. For commercial products, this range is 0  
to +70°C. For industrial products (N), this range is -40°C to +85°C.  
11. DS1210 is recognized by Underwriters Laboratories (UL) under file E99151.  
5 of 8  
DS1210  
TIMING DIAGRAM: POWER-UP  
TIMING DIAGRAM: POWER-DOWN  
OUTPUT LOAD Figure 2  
6 of 8  
DS1210  
ORDERING INFORMATION  
PIN-  
PACKAGE  
8 PDIP  
PART  
TEMP RANGE  
DS1210+  
0°C to +70°C  
DS1210N+  
DS1210S+  
DS1210SN+  
-40°C to +85°C 8 PDIP  
0°C to +70°C 16 SO  
-40°C to +85°C 16 SO  
+Denotes a lead(Pb)-free/RoHS-compliant package.  
PACKAGE INFORMATION  
For the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages.  
Note that a “+”, “#”, or “-” in the package code indicates RoHS status only. Package drawings may show a  
different suffix character, but the drawing pertains to the package regardless of RoHS status.  
PACKAGE TYPE  
8 PDIP  
PACKAGE CODE  
P8+4  
OUTLINE NO.  
21-0043  
LAND PATTERN NO.  
16 SO  
W16+2  
21-0042  
90-0107  
7 of 8  
DS1210  
REVISION HISTORY  
REVISION  
PAGES  
CHANGED  
DESCRIPTION  
DATE  
Added lead temperature and soldering temperature information to  
the Absolute Maximum Ratings section; changed “Pin 3” to “TOL”  
in multiple places; added the Package Thermal Characteristics  
section; added the Ordering Information and Package Information  
sections  
6/12  
1, 2, 4, 5, 8  
8 of 8  
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim  
reserves the right to change the circuitry and specifications without notice at any time.  
Maxim Integrated Products, Inc. 160 Rio Robles, San Jose, CA 95134 USA 1-408-601-1000  
© 2012 Maxim Integrated Products  
Maxim is a registered trademark of Maxim Integrated Products, Inc.  

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