DS1230W-100+ [MAXIM]

3.3V 256k Nonvolatile SRAM;
DS1230W-100+
型号: DS1230W-100+
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
描述:

3.3V 256k Nonvolatile SRAM

静态存储器
文件: 总10页 (文件大小:202K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
19-5636; Rev 11/10  
DS1230W  
3.3V 256k Nonvolatile SRAM  
www.maxim-ic.com  
FEATURES  
PIN ASSIGNMENT  
. 10 years minimum data retention in the  
absence of external power  
VCC  
A14  
A12  
A7  
1
28  
27  
WE  
A13  
A8  
2
3
4
26  
25  
. Data is automatically protected during power  
loss  
. Replaces 32k x 8 volatile static RAM,  
EEPROM or Flash memory  
. Unlimited write cycles  
. Low-power CMOS  
A6  
A9  
A11  
OE  
A10  
CE  
DQ7  
DQ6  
A5  
A4  
5
6
24  
23  
A3  
A2  
7
8
22  
21  
A1  
9
20  
19  
A0  
10  
. Read and write access times of 100ns  
. Lithium energy source is electrically  
disconnected to retain freshness until power is  
applied for the first time  
. Optional industrial temperature range of  
-40°C to +85°C, designated IND  
. JEDEC standard 28-pin DIP package  
. PowerCap Module (PCM) package  
DQ0  
11  
12  
18  
17  
DQ5  
DQ4  
DQ3  
DQ1  
DQ2  
GND  
13  
14  
16  
15  
28-Pin Encapsulated Package  
740-Mil Extended  
34  
NC  
NC  
A14  
A13  
A12  
A11  
A10  
A9  
A8  
A7  
A6  
A5  
A4  
A3  
A2  
A1  
A0  
1
NC  
NC  
NC  
33  
32  
31  
30  
2
-
-
Directly surface-mountable module  
Replaceable snap-on PowerCap provides  
lithium backup battery  
3
4
5
6
7
8
9
NC  
VCC  
29  
28  
27  
26  
25  
24  
23  
22  
21  
20  
19  
18  
WE  
OE  
CE  
-
-
Standardized pinout for all nonvolatile  
SRAM products  
Detachment feature on PowerCap allows  
easy removal using a regular screwdriver  
DQ7  
DQ6  
DQ5  
DQ4  
DQ3  
10  
11  
12  
13  
14  
15  
16  
17  
VBAT  
GND  
DQ2  
DQ1  
DQ0  
GND  
34-Pin PowerCap Module (PCM)  
(Uses DS9034PC+ or DS9034PCI+ PowerCap)  
PIN DESCRIPTION  
A0 - A14  
DQ0 - DQ7  
CE  
- Address Inputs  
- Data In/Data Out  
- Chip Enable  
- Write Enable  
- Output Enable  
- Power (+3.3V)  
- Ground  
WE  
OE  
VCC  
GND  
NC  
- No Connect  
1 of 10  
DS1230W  
DESCRIPTION  
The DS1230W 3.3V 256k Nonvolatile SRAM is a 262,144-bit, fully static, nonvolatile SRAM organized  
as 32,768 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control  
circuitry, which constantly monitors VCC for an out-of-tolerance condition. When such a condition occurs,  
the lithium energy source is automatically switched on and write protection is unconditionally enabled to  
prevent data corruption. DIP-package DS1230W devices can be used in place of existing 32k x 8 static  
RAMs directly conforming to the popular bytewide 28-pin DIP standard. The DIP devices also match the  
pinout of 28256 EEPROMs, allowing direct substitution while enhancing performance. DS1230W  
devices in the PowerCap Module package are directly surface mountable and are normally paired with a  
DS9034PC PowerCap to form a complete Nonvolatile SRAM Module. There is no limit on the number of  
write cycles that can be executed and no additional support circuitry is required for microprocessor  
interfacing.  
READ MODE  
The DS1230W executes a read cycle whenever  
(Write Enable) is inactive (high) and  
(Chip  
CE  
WE  
Enable) and  
(Output Enable) are active (low). The unique address specified by the 15 address inputs  
OE  
(A0 – A14) defines which of the 32,768 bytes of data is to be accessed. Valid data will be available to the  
eight data output drivers within tACC (Access Time) after the last address input signal is stable, providing  
that  
and  
(Output Enable) access times are also satisfied. If  
and  
access times are not  
CE  
CE  
OE  
OE  
satisfied, then data access must be measured from the later-occurring signal (  
or  
) and the limiting  
OE  
CE  
parameter is either tCO for  
or tOE for  
rather than address access.  
OE  
CE  
WRITE MODE  
The DS1230W executes a write cycle whenever the  
and  
signals are active (low) after address  
CE  
WE  
inputs are stable. The later-occurring falling edge of  
or  
will determine the start of the write cycle.  
WE  
CE  
The write cycle is terminated by the earlier rising edge of  
or  
. All address inputs must be kept  
WE  
CE  
valid throughout the write cycle.  
must return to the high state for a minimum recovery time (tWR)  
WE  
before another cycle can be initiated. The  
control signal should be kept inactive (high) during write  
OE  
cycles to avoid bus contention. However, if the output drivers are enabled (  
will disable the outputs in tODW from its falling edge.  
and  
active) then  
OE WE  
CE  
DATA RETENTION MODE  
The DS1230W provides full functional capability for VCC greater than 3.0 volts and write protects by 2.8  
volts. Data is maintained in the absence of VCC without any additional support circuitry. The nonvolatile  
static RAMs constantly monitor VCC. Should the supply voltage decay, the NV SRAMs automatically  
write protect themselves, all inputs become “don’t care,” and all outputs become high-impedance. As VCC  
falls below approximately 2.5 volts, a power switching circuit connects the lithium energy source to  
RAM to retain data. During power-up, when VCC rises above approximately 2.5 volts, the power  
switching circuit connects external VCC to RAM and disconnects the lithium energy source. Normal  
RAM operation can resume after VCC exceeds 3.0 volts.  
FRESHNESS SEAL  
Each DS1230W device is shipped from Maxim with its lithium energy source disconnected, guaranteeing  
full energy capacity. When VCC is first applied at a level greater than 3.0 volts, the lithium energy source  
is enabled for battery back-up operation.  
2 of 10  
DS1230W  
PACKAGES  
The DS1230W is available in two packages: 28-pin DIP and 34-pin PowerCap Module (PCM). The 28-  
pin DIP integrates a lithium battery, an SRAM memory and a nonvolatile control function into a single  
package with a JEDEC-standard, 600-mil DIP pinout. The 34-pin PowerCap Module integrates SRAM  
memory and nonvolatile control into a module base along with contacts for connection to the lithium  
battery in the DS9034PC PowerCap. The PowerCap Module package design allows a DS1230W to be  
surface mounted without subjecting its lithium backup battery to destructive high-temperature reflow  
soldering. After a DS1230W module base is reflow soldered, a DS9034PC PowerCap is snapped on top  
of the base to form a complete Nonvolatile SRAM module. The DS9034PC is keyed to prevent improper  
attachment. DS1230W module bases and DS9034PC PowerCaps are ordered separately and shipped in  
separate containers. See the DS9034PC data sheet for further information.  
3 of 10  
DS1230W  
ABSOLUTE MAXIMUM RATINGS  
Voltage on Any Pin Relative to Ground  
Operating Temperature Range  
Commercial:  
-0.3V to +4.6V  
0°C to +70°C  
Industrial:  
-40°C to +85°C  
Storage Temperature Range  
EDIP  
PowerCap  
Lead Temperature (soldering, 10s)  
Note: EDIP is wave or hand soldered only.  
Soldering Temperature (reflow, PowerCap)  
-40°C to +85°C  
-55°C to +125°C  
+260°C  
+260°C  
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation  
sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of time may affect  
reliability.  
RECOMMENDED DC OPERATING CONDITIONS  
(TA: See Note 10)  
PARAMETER  
Power Supply Voltage  
Logic 1  
SYMBOL MIN  
TYP  
MAX  
3.6  
UNITS NOTES  
VCC  
VIH  
VIL  
3.0  
2.2  
0.0  
3.3  
V
V
V
VCC  
0.4  
Logic 0  
DC ELECTRICAL CHARACTERISTICS  
(TA: See Note 10) (VCC = 3.3V ±0.3V)  
PARAMETER  
SYMBOL MIN  
TYP  
MAX  
UNITS NOTES  
Input Leakage Current  
IIL  
IIO  
-1.0  
-1.0  
-1.0  
2.0  
+1.0  
µA  
µA  
mA  
mA  
µA  
µA  
mA  
V
+1.0  
I/O Leakage Current  
VIH VCC  
CE  
Output Current @ 2.2V  
Output Current @ 0.4V  
IOH  
IOL  
ICCS1  
ICCS2  
ICCO1  
VTP  
50  
30  
250  
150  
50  
Standby Current  
Standby Current  
=2.2V  
CE  
CE  
=V -0.2V  
CC  
Operating Current  
Write Protection Voltage  
2.8  
2.9  
3.0  
4 of 10  
DS1230W  
(TA = +25°C)  
UNITS NOTES  
pF  
CAPACITANCE  
PARAMETER  
SYMBOL MIN  
TYP  
MAX  
10  
Input Capacitance  
CIN  
5
5
Input/Output Capacitance  
CI/O  
10  
pF  
AC ELECTRICAL CHARACTERISTICS  
(TA: See Note 10) (VCC = 3.3V ±0.3V)  
DS1230W-100  
PARAMETER  
SYMBOL  
UNITS NOTES  
MIN  
MAX  
Read Cycle Time  
tRC  
tACC  
tOE  
100  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
Access Time  
100  
50  
OE to Output Valid  
CE to Output Valid  
tCO  
100  
OE or CE to Output Active  
Output High-Z from Deselection  
Output Hold from Address Change  
Write Cycle Time  
tCOE  
tOD  
tOH  
tWC  
tWP  
tAW  
5
5
5
35  
5
100  
75  
0
Write Pulse Width  
3
Address Setup Time  
tWR1  
tWR2  
5
20  
ns  
ns  
12  
13  
Write Recovery Time  
tODW  
tOEW  
tDS  
35  
ns  
ns  
ns  
5
5
4
Output High-Z from  
Output Active from  
Data Setup Time  
WE  
WE  
5
40  
tDH1  
tDH2  
0
20  
ns  
ns  
12  
13  
Data Hold Time  
5 of 10  
DS1230W  
READ CYCLE  
SEE NOTE 1  
WRITE CYCLE 1  
SEE NOTES 2, 3, 4, 6, 7, 8 AND 12  
6 of 10  
DS1230W  
WRITE CYCLE 2  
SEE NOTES 2, 3, 4, 6, 7, 8 AND 13  
POWER-DOWN/POWER-UP CONDITION  
7 of 10  
DS1230W  
POWER-DOWN/POWER-UP TIMING  
(TA: See Note 10)  
PARAMETER  
SYMBOL MIN  
tPD  
tF  
TYP  
MAX  
UNITS NOTES  
1.5  
11  
µs  
µs  
µs  
ms  
ms  
VCC Fail Detect to  
and  
Inactive  
WE  
CE  
VCC slew from VTP to 0V  
VCC slew from 0V to VTP  
150  
150  
tR  
tPU  
tREC  
2
VCC Valid to  
and  
Inactive  
WE  
CE  
VCC Valid to End of Write Protection  
125  
(TA = +25°C)  
UNITS NOTES  
PARAMETER  
SYMBOL MIN  
tDR 10  
TYP  
MAX  
Expected Data Retention Time  
years  
9
WARNING:  
Under no circumstance are negative undershoots, of any amplitude, allowed when device is in battery  
backup mode.  
NOTES:  
1.  
is high for a Read Cycle.  
WE  
2.  
= VIH or VIL. If  
= VIH during write cycle, the output buffers remain in a high-impedance state.  
OE  
OE  
3. tWP is specified as the logical AND of  
and  
. t is measured from the latter of  
or  
CE WE  
CE  
WE  
WP  
going low to the earlier of  
or  
going high.  
WE  
CE  
4. tDH, tDS are measured from the earlier of  
or  
going high.  
WE  
CE  
5. These parameters are sampled with a 5 pF load and are not 100% tested.  
6. If the low transition occurs simultaneously with or latter than the  
low transition, the output  
high transition, the output  
CE  
WE  
WE  
buffers remain in a high-impedance state during this period.  
7. If the high transition occurs prior to or simultaneously with the  
CE  
buffers remain in high-impedance state during this period.  
8. If is low or the low transition occurs prior to or simultaneously with the low transition,  
CE  
WE  
WE  
the output buffers remain in a high-impedance state during this period.  
9. Each DS1230W has a built-in switch that disconnects the lithium source until VCC is first applied by  
the user. The expected tDR is defined as accumulative time in the absence of VCC starting from the  
time power is first applied by the user.  
10. All AC and DC electrical characteristics are valid over the full operating temperature range. For  
commercial products, this range is 0°C to 70°C. For industrial products (IND), this range is -40°C to  
+85°C.  
11. In a power-down condition the voltage on any pin may not exceed the voltage on VCC.  
12. tWR1 and tDH1 are measured from  
going high.  
WE  
13. tWR2 and tDH2 are measured from  
going high.  
CE  
14. DS1230 modules are recognized by Underwriters Laboratories (UL) under file E99151.  
8 of 10  
DS1230W  
DC TEST CONDITIONS  
Outputs Open  
Cycle = 200ns for operating current  
All voltages are referenced to ground  
AC TEST CONDITIONS  
Output Load: 100pF + 1TTL Gate  
Input Pulse Levels: 0 to 2.7V  
Timing Measurement Reference Levels  
Input: 1.5V  
Output: 1.5V  
Input pulse Rise and Fall Times: 5ns  
ORDERING INFORMATION  
SUPPLY  
TOLERANCE  
3.3V ± 0.3V  
3.3V ± 0.3V  
3.3V ± 0.3V  
3.3V ± 0.3V  
SPEED GRADE  
PART  
TEMP RANGE  
PIN-PACKAGE  
(ns)  
100  
100  
100  
100  
DS1230W-100+  
0°C to +70°C  
0°C to +70°C  
-40°C to +85°C  
-40°C to +85°C  
28 740 EDIP  
34 PowerCap*  
28 740 EDIP  
34 PowerCap*  
DS1230WP-100+  
DS1230W-100IND+  
DS1230WP-100IND+  
+Denotes a lead(Pb)-free/RoHS-compliant package.  
*DS9034PC+ or DS9034PCI+ (PowerCap) required. Must be ordered separately.  
PACKAGE INFORMATION  
For the latest package outline information and land patterns, go to www.maxim-ic.com/packages. Note that a “+”,  
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix  
character, but the drawing pertains to the package regardless of RoHS status.  
PACKAGE TYPE  
PACKAGE CODE  
OUTLINE NO.  
21-0245  
LAND PATTERN NO.  
28 EDIP  
MDT28+3  
34 PCAP  
PC2+4  
21-0246  
9 of 10  
DS1230W  
REVISION HISTORY  
REVISION  
PAGES  
CHANGED  
DESCRIPTION  
DATE  
Added the Ordering Information table; removed the DIP module  
package drawing and dimension table  
121907  
8
Updated the storage information, soldering temperature, and lead  
temperature information in the Absolute Maximum Ratings section;  
removed the -150 MIN/MAX information from the AC Electrical  
Characteristics table; updated the Ordering Information table  
(removed -150 parts and leaded -100 parts); removed the PowerCap  
module drawings and updated the Package Information table  
11/10  
1, 4, 5, 9  
10 of 10  

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