DS1312 [MAXIM]
Nonvolatile Controller with Lithium Battery Monitor;型号: | DS1312 |
厂家: | MAXIM INTEGRATED PRODUCTS |
描述: | Nonvolatile Controller with Lithium Battery Monitor 电池 光电二极管 |
文件: | 总12页 (文件大小:507K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
19-6306; Rev 6/12
`
DS1312
Nonvolatile Controller with Lithium Battery Monitor
FEATURES
PIN ASSIGNMENT
. Converts CMOS SRAM into nonvolatile
memory
VCCO
VBAT
TOL
GND
1
2
3
4
8
7
6
5
VCCI
BW
VCCO
VBAT
TOL
GND
1
2
3
4
8
7
6
5
VCCI
BW
. Unconditionally write-protects SRAM when
VCC is out of tolerance
CEO
CEI
CEO
CEI
. Automatically switches to battery backup
supply when VCC power failure occurs
. Monitors voltage of a lithium cell and
provides advanced warning of impending
battery failure
DS1312 8-Pin DIP
(300 mils)
DS1312S-2 8-Pin SOIC
(150 mils)
NC
VCCO
NC
1
2
3
4
5
6
7
8
9
10
20
19
18
17
NC
NC
VCCO
NC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
NC
VCCI
RST
NC
VCCI
RST
NC
. Signals low-battery condition on active low
Battery Warning output signal
VBAT
NC
VBAT
NC
16
NC
BW
CEO
NC
. Optional 5% or 10% power-fail detection
. Space-saving 8-pin DIP and SOIC packages
. Optional 16-pin SOIC and 20-pin TSSOP
versions reset processor when power failure
occurs and hold processor in reset during
system power-up
NC
BW
NC
TOL
NC
15
14
13
12
11
TOL
NC
CEO
NC
GND
CEI
NC
DS1312S 16-Pin SOIC
(300 mils)
GND
CEI
DS1312E 20-Pin TSSOP
. Industrial temperature range of -40°C to
+85°C
PIN DESCRIPTION
VCCI
VCCO
VBAT
- +5V Power Supply Input
- SRAM Power Supply Output
- Backup Battery Input
CEI
- Chip Enable Input
CEO
- Chip Enable Output
- VCC Tolerance Select
TOL
BW
- Battery Warning Output
(Open Drain)
RST
GND
NC
- Reset Output (Open Drain)
- Ground
- No Connection
DESCRIPTION
The DS1312 Nonvolatile Controller with Battery Monitor is a CMOS circuit which solves the application
problem of converting CMOS RAM into nonvolatile memory. Incoming power is monitored for an out-
of-tolerance condition. When such a condition is detected, chip enable is inhibited to accomplish write
protection and the battery is switched on to supply the RAM with uninterrupted power. Special circuitry
uses a low-leakage CMOS process which affords precise voltage detection at extremely low battery
consumption.
1 of 12
DS1312
In addition to battery-backup support, the DS1312 performs the important function of monitoring the
remaining capacity of the lithium battery and providing a warning before the battery reaches end-of-life.
Because the open-circuit voltage of a lithium backup battery remains relatively constant over the majority
of its life, accurate battery monitoring requires loaded-battery voltage measurement. The DS1312
performs such measurement by periodically comparing the voltage of the battery as it supports an internal
resistive load with a carefully selected reference voltage. If the battery voltage falls below the reference
voltage under such conditions, the battery will soon reach end-of-life. As a result, the Battery Warning
pin is activated to signal the need for battery replacement.
MEMORY BACKUP
The DS1312 performs all the circuit functions required to provide battery-backup for an SRAM. First, the
device provides a switch to direct power from the battery or the system power supply (VCCI). Whenever
VCCI is less than the switch point VSW and VCCI is less than the battery voltage VBAT, the battery is
switched in to provide backup power to the SRAM. This switch has voltage drop of less than 0.2 volts.
Second, the DS1312 handles power failure detection and SRAM write-protection. VCCI is constantly
monitored, and when the supply goes out of tolerance, a precision comparator detects power failure and
inhibits chip enable output (CEO ) in order to write-protect the SRAM. This is accomplished by holding
CEO to within 0.2 volts of VCCO when VCCI is out of tolerance. If CEI is (active) low at the time that
power failure is detected, the CEO signal is kept low until CEI is brought high again. Once CEI is
brought high, CEO is taken high and held high until after VCCI has returned to its nominal voltage level. If
CEI is not brought high by 1.5 µs after power failure is detected, CEO is forced high at that time. This
specific scheme for delaying write protection for up to 1.5 µs guarantees that any memory access in
progress when power failure occurs will complete properly. Power failure detection occurs in the range
of 4.75 to 4.5 volts (5% tolerance) when the TOL pin is wired to GND or in the range of 4.5 to 4.25 volts
(10% tolerance) when TOL is connected to VCCO
.
BATTERY VOLTAGE MONITORING
The DS1312 automatically performs periodic battery voltage monitoring at a factory-programmed time
interval of 24 hours. Such monitoring begins within tREC after VCCI rises above VCCTP, and is suspended
when power failure occurs.
After each 24-hour period (tBTCN) has elapsed, the DS1312 connects VBAT to an internal 1.2 MΩ test
resistor (RINT) for one second (tBTPW). During this one second, if VBAT falls below the factory-
programmed battery voltage trip point (VBTP), the battery warning output BW is asserted. While BW is
active battery testing will be performed with period tBTCW to detect battery removal and replacement.
Once asserted, BW remains active until the battery is physically removed and replaced by a fresh cell.
The battery is still retested after each VCC power-up, however, even if BW was active on power-down. If
the battery is found to be higher than VBTP during such testing, BW is deasserted and regular 24-hour
testing resumes. BW has an open-drain output driver.
Battery replacement following BW activation is normally done with VCCI nominal so that SRAM data is
not lost. During battery replacement, the minimum time duration between old battery detachment and
new battery attachment (tBDBA) must be met or BW will not deactivate following attachment of the new
2 of 12
DS1312
battery. Should BW not deactivate for this reason, the new battery can be detached for tBDBA and then re-
attached to clear BW .
NOTE: The DS1312 cannot constantly monitor an attached battery because such monitoring would
drastically reduce the life of the battery. As a result, the DS1312 only tests the battery for one second out
of every 24 hours and does not monitor the battery in any way between tests. If a good battery (one that
has not been previously flagged with BW ) is removed between battery tests, the DS1312 may not
immediately sense the removal and may not activate BW until the next scheduled battery test. If a battery
is then reattached to the DS1312, the battery may not be tested until the next scheduled test.
NOTE: Battery monitoring is only a useful technique when testing can be done regularly over the entire
life of a lithium battery. Because the DS1312 only performs battery monitoring when VCC is nominal,
systems which are powered-down for excessively long periods can completely drain their lithium cells
without receiving any advanced warning. To prevent such an occurrence, systems using the DS1312
battery monitoring feature should be powered–up periodically (at least once every few months) in order
to perform battery testing. Furthermore, anytime BW is activated on the first battery test after a power-up,
data integrity should be checked via checksum or other technique.
POWER MONITORING
DS1312S and DS1312E varieties have an additional reset pin. These varieties detect out-of-tolerance
power supply conditions and warn a processor-based system of impending power failure. When VCCI falls
below the trip point level defined by the TOL pin (VCCTP), the VCCI comparator activates the reset signal
RST . Reset occurs in the range of 4.75 to 4.5 volts (5% tolerance) when the TOL pin is connected to
GND or in the range of 4.5 to 4.25 volts (10% tolerance) when TOL is connected to VCCO
.
RST also serves as a power-on reset during power-up. After VCCI exceeds VCCTP, RST will be held active
for 200 ms nominal (tRPU). This reset period is sufficiently long to prevent system operation during
power-on transients and to allow tREC to expire. RST has an open-drain output driver.
FRESHNESS SEAL MODE
When the battery is first attached to the DS1312 without VCC power applied, the device does not
immediately provide battery-backup power on VCCO. Only after VCCI exceeds VCCTP will the DS1312
leave Freshness Seal Mode. This mode allows a battery to be attached during manufacturing but not used
until after the system has been activated for the first time. As a result, no battery energy is drained during
storage and shipping.
3 of 12
DS1312
FUNCTIONAL BLOCK DIAGRAM Figure 1
4 of 12
DS1312
ABSOLUTE MAXIMUM RATINGS
Voltage Range on Any Pin Relative to Ground
Operating Temperature Range
Storage Temperature Range
Soldering Temperature (reflow, SO or TSSOP)
Lead Temperature (soldering, 10s)
-0.5V to +6.0V
-40°C to +85°C
-55°C to +125°C
+260°C
+300°C
This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operation sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods of
time may affect reliability.
PACKAGE THERMAL CHARACTERISTICS (Note 1)
PDIP
Junction-to-Ambient Thermal Resistance (θJA).…………………...………………………....110°C/W
Junction-to-Case Thermal Resistance (θJC)……………………………………………………40°C/W
8 SO
Junction-to-Ambient Thermal Resistance (θJA).……………………………………………...132°C/W
Junction-to-Case Thermal Resistance (θJC)……………………………………………………38°C/W
16 SO
Junction-to-Ambient Thermal Resistance (θJA).…………………...………………………......71°C/W
Junction-to-Case Thermal Resistance (θJC)……………………………………………………23°C/W
TSSOP
Junction-to-Ambient Thermal Resistance (θJA).……………………………………………..73.8°C/W
Junction-to-Case Thermal Resistance (θJC)……………………………………………………20°C/W
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board for the SMT packages. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-
tutorial.
Note 1:
RECOMMENDED OPERATING CONDITIONS
(-40°C to +85°C)
PARAMETER
SYMBOL
VCCI
MIN
4.75
4.5
2.0
2.0
TYP
5.0
5.0
MAX
5.5
5.5
6.0
VCCI+0.3
+0.8
UNITS NOTES
Supply Voltage TOL=GND
Supply Voltage TOL=VCCO
Battery Supply Voltage
Logic 1 Input
V
V
V
V
V
2
2
2
2, 13
2, 13
VCCI
VBAT
VIH
Logic 0 Input
VIL
-0.3
DC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C; VCCI >VCCTP)
PARAMETER
SYMBOL
ICC1
MIN
TYP
200
50
MAX
400
100
UNITS NOTES
Operating Current (TTL inputs)
Operating Current (CMOS inputs)
RAM Supply Current
µA
µA
mA
3
3, 6
4
ICC2
ICCO1
140
(VCCO ≥ VCCI -0.2V)
RAM Supply Current
ICCO1
200
mA
5
(VCCO ≥ VCCI -0.3V)
VCC Trip Point (TOL=GND)
VCC Trip Point (TOL=VCCO
VBAT Trip Point
VCCTP
VCCTP
VBTP
4.50
4.25
2.5
4.62
4.37
2.6
4.75
4.50
2.7
V
V
V
2
2
2
)
5 of 12
DS1312
2
8, 11
8, 11
VCC/VBAT Switch Point
Output Current @ 2.4V
Output Current @ 0.4V
Input Leakage
Output Leakage
Battery Monitoring Test Load
VSW
IOH
IOL
IIL
ILO
2.6
-1
2.7
1.2
2.8
V
mA
mA
µA
µA
MΩ
4
-1.0
-1.0
0.8
+1.0
+1.0
1.5
RINT
DC ELECTRICAL CHARACTERISTICS (-40°C to +85°C; VCCI < VBAT; VCCI < VSW)
PARAMETER
Battery Current
Battery Backup Current
Supply Voltage
SYMBOL
IBAT
MIN
TYP
MAX
100
500
UNITS NOTES
nA
µA
V
3
7
2
ICCO2
VCCO
VOHL
VBAT-0.2
VBAT-0.2
V
2, 9
CEO Output
CAPACITANCE
(TA = +25°C)
UNITS NOTES
pF
PARAMETER
SYMBOL
MIN
MIN
TYP
MAX
CIN
7
Input Capacitance (CEI , TOL)
Output Capacitance
COUT
7
pF
(CEO , BW , RST
)
AC ELECTRICAL CHARACTERISTICS
PARAMETER
(-40°C to +85°C; VCCI > VCCTP)
SYMBOL
TYP
MAX
UNITS NOTES
tPD
5
10
ns
µs
ms
CEI to CEO Propagation Delay
tCE
1.5
12
10
CE Pulse Width
VCC Valid to End of
Write Protection
tREC
12
125
tPU
2
350
1
ms
ms
s
VCC Valid to CEI Inactive
VCC Valid to RST Inactive
VCC Valid to BW Valid
tRPU
tBPU
150
200
11
11
AC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C; VCCI < VCCTP)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
VCC Slew Rate
tF
tRPD
150
µs
µs
5
15
11
VCC Fail Detect to RST Active
VCC Slew Rate
tR
150
µs
AC ELECTRICAL CHARACTERISTICS
(-40°C to +85°C; VCCI > VCCTP)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS NOTES
tBW
1
s
11
Battery Test to BW Active
Battery Test Cycle-Normal
Battery Test Cycle-Warning
Battery Test Pulse Width
tBTCN
tBTCW
tBTPW
tBDBA
tBABW
24
5
hr
s
s
s
s
1
1
Battery Detach to Battery Attach
7
11
Battery Attach to BW Inactive
6 of 12
DS1312
TIMING DIAGRAM: POWER-UP
NOTE:
If VBAT < VSW, VCCO will begin to slew with VCCI when VCCI = VBAT
.
7 of 12
DS1312
TIMING DIAGRAM: POWER-DOWN
NOTE:
If VBAT < VSW, VCCO will slew down with VCCI until VCCI = VBAT
.
8 of 12
DS1312
TIMING DIAGRAM: BATTERY WARNING DETECTION
NOTE:
tBW is measured from the expiration of the internal timer to the activation of the battery warning output
BW
.
TIMING DIAGRAM: BATTERY REPLACEMENT
9 of 12
DS1312
NOTES:
2. All voltages referenced to ground.
3. Measured with outputs open circuited.
4. ICCO1 is the maximum average load which the DS1312 can supply to attached memories at VCCO
>
VCCI -0.2V.
5. ICCO1 is the maximum average load which the DS1312 can supply to attached memories at VCCO
VCCI -0.3V.
>
6. All inputs within 0.3V of ground or VCCI
.
7. ICCO2 is the maximum average load current which the DS1312 can supply to the memories in the
battery backup mode.
8. Measured with a load as shown in Figure 2.
9. Chip Enable Output CEO can only sustain leakage current in the battery backup mode.
10. CEO will be held high for a time equal to tREC after VCCI crosses VCCTP on power-up.
11. BW and RST are open-drain outputs and, as such, cannot source current. External pull-up resistors
should be connected to these pins for proper operation. Both BW and RST can sink 10 mA.
12. tCE maximum must be met to ensure data integrity on power-down.
13. In battery-backup mode, inputs must never be below ground or above VCCO
.
14. The DS1312 is recognized by Underwriters Laboratories (UL) under file E99151.
DC TEST CONDITIONS
Outputs Open
All voltages are referenced to ground
AC TEST CONDITIONS
Output Load: See below
Input Pulse Levels: 0 - 3.0V
Timing Measurement Reference Levels
Input: 1.5V
Output: 1.5V
Input pulse Rise and Fall Times: 5 ns
10 of 12
DS1312
OUTPUT LOAD Figure 2
ORDERING INFORMATION
TEMP
RANGE
PART
PIN-PACKAGE
DS1312+
-40°C to +85°C 8 PDIP
-40°C to +85°C 8 SO
-40°C to +85°C 16 SO
DS1312S-2+
DS1312S+
DS1312E+
-40°C to +85°C 20 TSSOP
+Denotes a lead(Pb)-free/RoHS-compliant package.
PACKAGE INFORMATION
For the latest package outline information and land patterns (footprints), go to www.maxim-ic.com/packages. Note that a “+”,
“#”, or “-” in the package code indicates RoHS status only. Package drawings may show a different suffix character, but the
drawing pertains to the package regardless of RoHS status.
PACKAGE TYPE
8 PDIP
PACKAGE CODE
P8+2
OUTLINE NO.
21-0043
LAND PATTERN NO.
8 SO
16 SO
20 TSSOP
S8+4
W16+1
U20+1
21-0041
21-0042
21-0066
90-0096
90-0107
90-0116
11 of 12
DS1312
DATA SHEET REVISION SUMMARY
The following represent the key differences between 12/16/96 and 06/12/97 version of the DS1312 data
sheet. Please review this summary carefully.
1. Changed VBAT max to 6V
2. Changed tBABW from 75 to 1s max
3. Changed block diagram to show UL compliance
The following represent the key differences between 06/12/97 and 08/29/97 version of the DS1312 data
sheet. Please review this summary carefully.
1. Changed AC test conditions
The following represent the key differences between 08/29/97 and 12/16/97 version of the DS1312 data
sheet. Please review this summary carefully.
1. Specified Input Capacitance as being only for CEI , TOL and output capacitance as being only for
CEO BW and RST . This is not a change but rather a clarification.
,
2. Add note 13 describing UL recognition.
The following represent the key differences between 08/29/97 and 6/12 version of the DS1312 data sheet.
Please review this summary carefully.
1. Update soldering, ordering, package info, and notes.
12 of 12
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied. Maxim
reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, Inc. 160 Rio Robles, San Jose, CA 95134 USA 1-408-601-1000
© 2012 Maxim Integrated Products
Maxim is a registered trademark of Maxim Integrated Products, Inc.
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