MAX17320X10 [MAXIM]

2S-4S ModelGauge m5 EZ Fuel Gauge with Protector, Internal Self-Discharge Detection, and SHA-256 Authentication;
MAX17320X10
型号: MAX17320X10
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
描述:

2S-4S ModelGauge m5 EZ Fuel Gauge with Protector, Internal Self-Discharge Detection, and SHA-256 Authentication

仪表
文件: 总179页 (文件大小:4192K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
EVALUATION KIT AVAILABLE  
Click here to ask about the production status of specific part numbers.  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection,  
and SHA-256 Authentication  
General Description  
Benefits and Features  
The MAX17320 is a 38μA I stand-alone pack-side fuel  
● Battery Health + Programmable Safety/Protection  
• Overvoltage (Temperature Dependent)  
• Overcharge/Overdischarge/Short-Circuit Current  
• Over/Undertemperature  
Q
gauge IC with protector, battery internal self-discharge de-  
tection, and optional SHA-256 authentication for 2 to 4 se-  
ries lithium-ion/polymer batteries.  
• Undervoltage + SmartEmpty  
The IC monitors the voltage, current, temperature and  
state of the battery to provide protection against over/un-  
dervoltage, overcurrent, short-circuit, over/undertempera-  
ture, overcharge, and internal self-discharge conditions  
using external high-side N-FETs, and provides charging  
prescription to ensure that the battery operates under safe  
conditions, thereby prolonging the life of the battery. The  
IC balances the cells using internal FETs. During prequal  
charging, the IC uses the CHGFET to linearly control  
charging.  
• Battery Internal Self-Discharge Detection  
• Ideal Diode Discharge During Charge Fault  
• Charging Prescriptions (JEITA)  
• Prequal Charge Control with CHG FET  
● ModelGauge m5 EZ Algorithm  
• Percent, Capacity, Time-to-Empty/Full, Age  
• Cycle+™ Age Forecast  
● Precision Measurement Without Calibration  
• Current, Voltage, Power, Time, Cycles  
• Die Temperature, 4 Thermistors ±1˚C  
To prevent battery pack cloning, the IC integrates  
SHA-256 authentication with a 160-bit secret key. Each IC  
incorporates a unique 64-bit ID.  
● Cell Balancing with Internal FETs  
● SHA-256 Authentication  
● Nonvolatile Memory for Stand-Alone Operation  
• History Logging, User Data (84 Bytes)  
TM  
The fuel gauge uses Maxim ModelGauge  
m5 algorithm  
that combines the short-term accuracy and linearity of a  
coulomb counter with the long-term stability of a voltage-  
based fuel gauge to provide industry-leading fuel gauge  
accuracy. The IC automatically compensates for cell ag-  
ing, temperature, and discharge rate, and provides accu-  
rate state-of-charge (SOC) in milliampere-hours (mAh) or  
percentage (%) over a wide range of operating conditions.  
● Low Quiescent Current  
• FETs Enabled: 38μA Active  
● Pushbutton Wakeup—Eliminates System  
Consumption Until Button Press  
● Always-On LDO  
● Dynamic Power—Estimates Power Capability  
● SBS 1.1 Compatible Register Set  
The IC provides a configurable always-on LDO that can  
power small critical loads on the system side without over-  
loading the cells even under fault conditions. Dynamic  
power functionality provides the instantaneous maximum  
battery output power which can be delivered to the system  
without violating the minimum system input voltage.  
Ordering Information appears at end of data sheet.  
Simplified Block Diagram  
3 TERM  
FUSE*  
PACK+  
®
2
A Maxim 1-Wire or 2-wire I C/SMBus interface provides  
access to data and control registers. The IC is available in  
a lead-free, 2.4mm x 2.6mm 30-bump 0.4mm pitch WLP  
and 4mm x 4mm 24-pin TQFN packages.  
N
PFAIL* CHG  
CP  
DIS  
ZVC  
PCKP  
IN  
AOLDO*  
REG3  
REG2  
BATTS  
CELL3*  
CELL2*  
ALRT*  
Applications  
SDA/DQ  
SCL/OD  
TH4*  
● Smartphones, Tablets, and 2-in-1 Laptops  
● Medical Devices, Health and Fitness Monitors  
● Digital Still, Video, and Action Cameras  
● Handheld Computers, Radios, and Terminals  
● Power Tools, Wireless Speakers, and Drones  
● Smart Batteries and Battery Backup  
TH3*  
CELL1  
TH2*  
MAX17320  
GND  
CSP  
TH1*  
CSN  
PACK-  
*OPTIONAL  
ModelGauge is a trademark of Maxim Integrated Products, Inc.  
1-Wire is a registered trademark of Maxim Integrated Products, Inc.  
Cycle+ is a trademark of Maxim Integrated Products, Inc.  
19-100749; Rev 7; 8/20  
 
 
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS  
General Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Benefits and Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Simplified Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  
Absolute Maximum Ratings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18  
Package Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
30 WLP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19  
24 TQFN. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20  
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21  
Typical Operating Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26  
Pin Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
WLP . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30  
TQFN . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
Pin Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31  
Functional Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33  
Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33  
Detailed Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34  
General Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34  
Protector. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35  
Protector Thresholds. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 41  
Voltage Thresholds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42  
SmartEmpty. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43  
Current Thresholds. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44  
Overcurrent Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45  
Fast Overcurrent Comparators. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46  
Overcurrent Comparator Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46  
Slow Overcurrent Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46  
Temperature Thresholds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46  
Additional Protection Thresholds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47  
Battery Internal Self-Discharge Detection (ISD). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47  
Charger Presence and Ideal Diode Behavior. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49  
Permanent Failure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50  
Charge Control. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50  
Zero-Volt Charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50  
Prequal Charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51  
Charging Prescription . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51  
Step Charging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52  
2
Disabling FETs by Pin-Control or I C Command . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53  
www.maximintegrated.com  
Maxim Integrated | 2  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
Fuel Gauge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53  
ModelGauge m5 Algorithm . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53  
ModelGauge m5 EZ Performance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55  
OCV Estimation and Coulomb Count Mixing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56  
Empty Compensation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56  
End-of-Charge Detection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57  
Fuel Gauge Learning. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59  
Converge-To-Empty . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60  
Determining Fuel-Gauge Accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61  
Initial Accuracy . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61  
Cycle+ Age Forecasting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62  
nAgeFcCfg Register (1E2h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62  
AgeForecast Register (0B9h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63  
Age Forecasting Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63  
Enabling Age Forecasting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63  
Battery Life Logging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64  
Life Logging Data Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65  
Determining Number of Valid Logging Entries . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66  
Reading History Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68  
History Data Reading Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68  
Analog Measurements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69  
Cell Balancing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70  
Cell Balancing Window of Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70  
Cell Balancing Order and Thresholds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71  
RMismatch . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71  
Cell Balancing Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71  
Cell Balancing Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73  
Cell Balancing Duty Cycle. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73  
Internal Self-Discharge Detection Interaction with Cell Balancing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73  
Backup and Always-On LDO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74  
SHA-256 Authentication. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74  
Wake-Up/Shutdown . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75  
Modes of Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75  
Power Mode Transition State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76  
Pushbutton Wake-Up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76  
Register Description. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77  
Register Description Conventions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77  
Standard Register Formats . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77  
www.maximintegrated.com  
Maxim Integrated | 3  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
Device Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77  
Nonvolatile Backup and Initial Value . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77  
Register Naming Conventions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77  
Protection Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78  
nPackCfg Register (1B5h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78  
Voltage Protection Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79  
nUVPrtTh Register (1D0h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79  
nJEITAV Register (1D9h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79  
nOVPrtTh Register (1DAh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80  
nBalTh Register (1D4h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80  
Current Protection Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81  
nODSCTh Register (1DDh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81  
nODSCCfg Register (1DEh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82  
nIPrtTh1 Register (1D3h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82  
nJEITAC Register (1D8h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82  
Temperature Protection Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83  
nTPrtTh1 Register (1D1h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83  
nTPrtTh2 Register (1D5h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83  
nTPrtTh3 Register (1D2h) (beyond JEITA). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84  
nProtMiscTh Register (1D6h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84  
Fault Timer Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85  
nDelayCfg Register (1DCh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85  
Battery Internal Self-Discharge Detection Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86  
Status/Configuration Protection Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88  
nProtCfg Register (1D7h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88  
Status Register (000h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89  
Status2 Register (0B0h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90  
nBattStatus Register (1A8h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90  
nFaultLog Register (1AEh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90  
ProtStatus Register (0D9h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91  
ProtAlrt Register (0AFh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92  
HProtCfg2 Register (1F1h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92  
Nonvolatile Memory Status . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92  
Analog Measurement Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92  
Voltage Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93  
VCell Register (01Ah) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93  
AvgVCell Register (019h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93  
Cell1-Cell4 Registers (0D8h-0D5h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93  
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Maxim Integrated | 4  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
AvgCell1-AvgCell4 Registers (0D4h-0D1h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93  
Batt Register (0DAh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93  
PCKP Register (0DBh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93  
MaxMinVolt Register (0008h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94  
Current Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94  
Current Measurement Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94  
Current Register (01Ch) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94  
AvgCurrent Register (01Dh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95  
MaxMinCurr Register (00Ah). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95  
nCGain Register (1C8h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95  
CGTempCo (0B8h)/nCGTempCo (1C9h) Register. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96  
nRSense Register (1CFh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96  
Copper Trace Current Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96  
Temperature Measurement . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97  
Temperature Measurement Timing. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97  
Temp Register (01Bh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97  
AvgTA Register (016h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97  
MaxMinTemp Register (009h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97  
nThermCfg Register (1CAh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98  
DieTemp Register (034h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98  
AvgDieTemp Register (040h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98  
Temp1/2/3/4 Registers (13Ah-137h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98  
AvgTemp1/2/3/4 Registers (136h-133h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99  
Power . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99  
Charge Control Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99  
ChargingCurrent Register (028h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99  
ChargingVoltage Register (02Ah) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99  
nStepChg Register (1DBh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99  
nChgCfg (1C2h) Prequal Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100  
ModelGauge m5 Algorithm Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100  
ModelGauge m5 Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100  
ModelGauge m5 Algorithm Output Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101  
RepCap Register (005h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101  
RepSOC Register (006h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101  
FullCapRep Register (010h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102  
TTE Register (011h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102  
TTF Register (020h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102  
Age Register (007h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102  
www.maximintegrated.com  
Maxim Integrated | 5  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
Cycles Register (017h) and nCycles (1A4h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102  
Timer Register (03Eh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103  
TimerH Register (0BEh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103  
FullCap Register (010h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103  
nFullCapNom Register (1A5h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103  
RCell Register (014h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104  
VRipple Register (0B2h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104  
nVoltTemp Register (1AAh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104  
ModelGauge m5 Algorithm Input Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104  
nXTable0 (180h) to nXTable11 (18Bh) Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104  
nOCVTable0 (190h) to nOCVTable11 (19Bh) Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104  
nQRTable00 (1A0h) to nQRTable30 (1A3h) Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105  
nFullSOCThr Register (1C6h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105  
nVEmpty Register (19Eh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105  
nDesignCap Register(1B3h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105  
nIChgTerm Register (19Ch) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105  
nRComp0 Register (1A6h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106  
nTempCo Register (1A7h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106  
ModelGauge m5 Algorithm Configuration Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106  
nConfig Register (1B0h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106  
nNVCfg0 Register (1B8h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108  
nNVCfg1 Register (1B9h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109  
nNVCfg2 Register (1BAh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110  
nHibCfg Register (1BBh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111  
nFilterCfg Register (19Dh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111  
nMiscCfg Register (1B2h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112  
nRelaxCfg Register (1B6h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112  
nLearnCfg Register (19Fh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114  
nTTFCfg Register (1C7h)/CVMixCap (0B6h) and CVHalfTime (0B7h) Registers . . . . . . . . . . . . . . . . . . 114  
nConvgCfg Register (1B7h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115  
nRippleCfg Register (1B1h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116  
SOCHold Register (0D0h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116  
ModelGauge m5 Algorithm Additional Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117  
QResidual Register (00Ch) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117  
VFSOC Register (0FFh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117  
VFOCV Register (0FBh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117  
QH Register (4Dh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117  
AvCap Register (01Fh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117  
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Maxim Integrated | 6  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
AvSOC Register (00Eh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118  
MixSOC Register (00Dh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118  
MixCap Register (02Bh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118  
VFRemCap Register (04Ah) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118  
FStat Register (03Dh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118  
Identification Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119  
DevName Register (021h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119  
nROMID0 (1BCh)/nROMID1 (1BDh)/nROMID2 (1BEh)/nROMID3 (1BFh) Registers . . . . . . . . . . . . . . . . . . 119  
AtRate Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119  
AtRate Register (004h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119  
AtQResidual Register (0DCh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119  
AtTTE Register (0DDh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120  
AtAvSOC Register (0CEh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120  
AtAvCap Register (0DFh). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120  
Alert Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120  
nVAlrtTh Register (18Ch). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120  
nTAlrtTh Register (18Dh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121  
nSAlrtTh Register (18Fh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121  
nIAlrtTh Register (0ACh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122  
Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123  
ModelGauge m5 Memory Space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124  
Nonvolatile Memory. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125  
Nonvolatile Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125  
Shadow RAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125  
Shadow RAM and Nonvolatile Memory Relationship . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126  
Nonvolatile Memory Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126  
COPY NV BLOCK [E904h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126  
NV RECALL [E001h]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126  
HISTORY RECALL [E2XXh] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126  
Nonvolatile Block Programming . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127  
Determining Number of Remaining Updates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127  
Enabling and Freeing Nonvolatile vs. Defaults. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128  
100 Record Life Logging . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134  
Memory Locks and Write Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135  
CommStat Register (061h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136  
NV LOCK [6AXXh] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137  
Locking Memory Blocks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137  
Reading Lock State . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137  
www.maximintegrated.com  
Maxim Integrated | 7  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
SHA-256 Authentication Procedures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138  
Authentication Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138  
Procedure to Verify a Battery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139  
Alternate Authentication Procedure. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140  
Battery Authentication without a Host Side Secret. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140  
Secret Management . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141  
Single-Step Secret Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141  
Single-Step Secret Generation Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141  
Multistep Secret Generation Procedure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142  
Multistep Secret Generation Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143  
2-Stage MKDF Authentication Scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144  
Create a Unique Intermediate Secret. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145  
Procedure for 2-Stage MKDF Authentication. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146  
Determining Number of Remaining Updates. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147  
Authentication Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147  
COMPUTE MAC WITHOUT ROM ID [3600h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147  
COMPUTE MAC WITH ROM ID [3500h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147  
COMPUTE NEXT SECRET WITHOUT ROM ID [3000h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148  
COMPUTE NEXT SECRET WITH ROM ID [3300h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148  
CLEAR SECRET [5A00h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148  
LOCK SECRET [6000h]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148  
COPY INTERMEDIATE SECRET FROM NVM [3800] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148  
COMPUTE NEXT INTERMEDIATE SECRET WITH ROMID [3900] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148  
COMPUTE NEXT INTERMEDIATE SECRET WITHOUT ROMID [3A00] . . . . . . . . . . . . . . . . . . . . . . . . . . . 148  
COMPUTE MAC FROM INTERMEDIATE SECRET WITHOUT ROMID [3C00]. . . . . . . . . . . . . . . . . . . . . . 149  
COMPUTE MAC FROM INTERMEDIATE SECRET WITH ROMID [3D00]. . . . . . . . . . . . . . . . . . . . . . . . . . 149  
Smart Battery Compliant Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149  
SBS Compliant Memory Space. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149  
sManfctAccess Register (100h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150  
sRemCapAlarm/sRemTimeAlarm Registers (101h/102h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151  
sBatteryMode Register (103h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151  
At-Rate Functionality . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151  
sAtRate Register (104h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151  
sAtTTF Register (105h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151  
sAtTTE Register (106h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151  
sAtRateOK Register (107h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152  
sTemperature Register (108h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152  
sPackVoltage Register (109h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152  
www.maximintegrated.com  
Maxim Integrated | 8  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
sChargingCurrent Register (114h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152  
sBatteryStatus Register (116h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152  
sSpecInfo Register (11Ah) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
sManfctrDate Register (11Bh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
sSerialNumber Register (11Ch to 11Eh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
sManfctrName Register (120h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
sDeviceName Register (121h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
sDevChemistry Register (122h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sManfctData Registers (123h to 12Fh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sDesignVolt Register (119h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sFirstUsed Register (136h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sCell1-4 Registers (13Fh-13Ch). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sAvgCell1-4 Registers (14Fh-14Ch) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sAvCap Register (167h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sMixCap Register (168h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 154  
sManfctInfo Register (170h). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155  
nDesignVoltage Register (1E3h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155  
nSBSCfg Register (1B4h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155  
Nonvolatile SBS Register Backup. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155  
nCGain and Sense Resistor Relationship. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156  
Device Reset . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156  
Reset Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157  
HARDWARE RESET [000Fh to address 060h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157  
FUEL GAUGE RESET [8000h to address 0ABh]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157  
Communication . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157  
2-Wire Bus System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157  
Hardware Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 157  
2-Wire Bus Interface Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158  
I/O Signaling. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158  
Bit Transfer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158  
Bus Idle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158  
START and STOP Conditions. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158  
Acknowledge Bits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158  
Data Order. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159  
Slave Address . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159  
Read/Write Bit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159  
Bus Timing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159  
2-Wire Bus Timing Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159  
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Maxim Integrated | 9  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
2
I C Protocols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160  
2
I C Write Data Protocol. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160  
2
I C Read Data Protocol. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160  
SBS Protocols . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161  
SBS Write Word Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161  
Example SBS Write Word Communication Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162  
SBS Read Word Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162  
Example SBS Read Word Communication Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162  
SBS Write Block Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162  
SBS Read Block Protocol . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163  
Example SBS Read Block Communication Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163  
Valid SBS Read Block Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163  
Packet Error Checking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163  
PEC CRC Generation Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164  
1-Wire Bus System . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164  
Hardware Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164  
1-Wire Bus Interface Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165  
64-Bit Net Address (ROM ID). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165  
I/O Signaling. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165  
Reset Time Slot. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165  
1-Wire Initialization Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166  
Write Time Slots . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166  
Read Time Slots . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166  
1-Wire Write and Read Time Slots. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167  
Transaction Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167  
Net Address Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
Read Net Address [33h] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
Match Net Address [55h]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
Skip Net Address [CCh] . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
Search Net Address [F0h]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
1-Wire Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
Read Data [69h, LL, HH]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
Write Data [6Ch, LL, HH]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168  
Example 1-Wire Communication Sequences . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169  
Summary of Commands. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169  
16-Reading ADC FIFO Feature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170  
Appendix A: Reading History Data Pseudo-Code Example. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171  
Typical Application Circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174  
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Maxim Integrated | 10  
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Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TABLE OF CONTENTS (CONTINUED)  
Typical Application Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174  
Typical 2S-4S Battery Pack and System Implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175  
Typical Application with a Fuse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176  
Pushbutton Schematic . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177  
Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178  
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
LIST OF FIGURES  
Figure 1. Simplified Protector State Machine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38  
Figure 2. Programmable Voltage Thresholds (Default Values Shown) (All Voltages are per Cell). . . . . . . . . . . . . . . . . 40  
Figure 3. Programmable Current Thresholds (Default Values Shown With 5mΩ Sense Resistor). . . . . . . . . . . . . . . . . 41  
Figure 4. Standard Undervoltage Protection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 43  
Figure 5. SmartEmpty Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44  
Figure 6. Fast, Medium, and Slow Overcurrent Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45  
Figure 7. Overcurrent Comparator Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46  
Figure 8. Example of Internal Self-Discharge with Temperature Variation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 48  
Figure 9. Zero-Volt Charge Recovery . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51  
Figure 10. Step-Charging State Machine . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52  
Figure 11. Merger of Coulomb Counter and Voltage-Based Fuel Gauge . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54  
Figure 12. ModelGauge m5 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55  
Figure 13. ModelGauge m5 Typical Accuracy Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 56  
Figure 14. Handling Changes in Empty Calculation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57  
Figure 15. False End-of-Charge Events . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58  
Figure 16. FullCapRep Learning at End-of-Charge. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59  
Figure 17. FullCapNom Learning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60  
Figure 18. Converge-to-Empty . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 61  
Figure 19. Benefits of Age Forecasting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62  
Figure 20. Sample Life Logging Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65  
Figure 21. Write Flag Register and Valid Flag Register Formats . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67  
Figure 22. Cell Balancing Window of Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70  
Figure 23. Cell Balancing Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 72  
Figure 24. Cell Balancing Duty Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 73  
Figure 25. Power Modes Transition State Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 76  
Figure 26. ModelGauge m5 Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 101  
Figure 27. Cell Relaxation Detection. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113  
Figure 28. TTF Configuration Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115  
Figure 29. Shadow RAM and Nonvolatile Memory Relationship. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126  
Figure 30. Procedure to Verify a Battery. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139  
Figure 31. Battery Authentication without a Host Side Secret. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140  
Figure 32. Single-Step Secret Generation Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 141  
Figure 33. Multistep Secret Generation Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 143  
Figure 34. Create a Unique Intermediate Secret. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 145  
Figure 35. Procedure for 2-Stage MKDF Authentication. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146  
Figure 36. 2-Wire Bus Interface Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158  
Figure 37. 2-Wire Bus Timing Diagram. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159  
2
Figure 38. Example I C Write Data Communication Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160  
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Maxim Integrated | 12  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
LIST OF FIGURES (CONTINUED)  
2
Figure 39. Example I C Read Data Communication Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161  
Figure 40. Example SBS Write Word Communication Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162  
Figure 41. Example SBS Read Word Communication Sequence. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 162  
Figure 42. Example SBS Read Block Communication Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163  
Figure 43. PEC CRC Generation Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 164  
Figure 44. 1-Wire Bus Interface Circuitry . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165  
Figure 45. 1-Wire Initialization Sequence . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166  
Figure 46. 1-Wire Write and Read Time Slots. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167  
Figure 47. Example 1-Wire Communication Sequences. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169  
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Maxim Integrated | 13  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
LIST OF TABLES  
Table 1. Summary of Protector Registers by Function . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38  
Table 2. Voltage Thresholds (All Voltages are per Cell) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 42  
Table 3. Current Threshold Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44  
Table 4. Additional Protection Thresholds. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47  
Table 5. AvgCurrDet Threshold When Using 5mΩ and Default nProtMiscTh.CurrDet = 15mA . . . . . . . . . . . . . . . . . . . 49  
Table 6. nAgeFcCfg Register (1E2h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62  
Table 7. Minimum and Maximum Cell Sizes for Age Forecasting. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 63  
Table 8. Life Logging Register Summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 64  
Table 9. Reading History Page Flags . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 66  
Table 10. Decoding History Page Flags . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 67  
Table 11. Reading History Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 68  
Table 12. Analog Measurement Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69  
Table 13. Cell Balancing Thresholds. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 71  
Table 14. Modes of Operation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75  
Table 15. ModelGauge Register Standard Resolutions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 77  
Table 16. nPackCfg (1B5h) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 78  
Table 17. nUVPrtTh Register (1D0h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79  
Table 18. nJEITAV Register (1D9h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 79  
Table 19. nOVPrtTh Register (1DAh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80  
Table 20. nBalTh Register (1D4h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80  
Table 21. nODSCTh Register (1DDh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81  
Table 22. OCTH, SCTh, and ODTH Sample Values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 81  
Table 23. nODSCCfg Register (1DEh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82  
Table 24. nIPrtTh1 Register (1D3h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 82  
Table 25. nJEITAC Register (1D8h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83  
Table 26. nTPrtTh1 Register (1D1h) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83  
Table 27. nTPrtTh2 (1D5h) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83  
Table 28. nTPrtTh3 Register (1D2h) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84  
Table 29. nProtMiscTh Register (1D6h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 84  
Table 30. nDelayCfg (1DCh) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85  
Table 31. UVPTimer Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85  
Table 32. TempTimer/TempTrans Setting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85  
Table 33. PermFailTimer Settings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85  
Table 34. OverCurrTimer Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85  
Table 35. OVPTimer Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86  
Table 36. FullTimer/Prequal Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86  
Table 37. ChgWDT Settings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86  
Table 38. nProtCfg2 Register (1DFh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86  
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Maxim Integrated | 14  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
LIST OF TABLES (CONTINUED)  
Table 39. nTCurve Register (0x1C9) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87  
Table 40. Alert and Fault Mode Settings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87  
Table 41. LeakCurrRep Register (0x16F) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87  
Table 42. nProtCfg Register (1D7h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88  
Table 43. Status Register (000h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89  
Table 44. Status2 Register (0B0h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90  
Table 45. nBattStatus Register (1A8h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90  
Table 46. nFaultLog Register (1AEh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91  
Table 47. ProtStatus Register (0D9h) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91  
Table 48. ProtAlrt Register (0AFh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92  
Table 49. HProtCfg2 Register (1F1h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 92  
Table 50. MaxMinVolt (008h)/nMaxMinVolt (1ACh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94  
Table 51. Current Measurement Range and Resolution vs. Sense Resistor Value . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95  
Table 52. MaxMinCurr (00Ah)/nMaxMinCurr (1ABh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95  
Table 53. nCGain Register (1C8h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96  
Table 54. Copper Trace Sensing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 96  
Table 55. MaxMinTemp (009h)/nMaxMinTemp (1ADh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97  
Table 56. Register Settings for Common Thermistor Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98  
Table 57. nStepChg Register (1DBh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99  
Table 58. nChgCfg Register (1C2h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100  
Table 59. Cycles Register (017h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103  
Table 60. nCycles Register (1A4h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103  
Table 61. nNVCfg2.FibScl Setting Determines LSb of nNVCfg2.CyclesCount. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103  
Table 62. nVoltTemp Register (1AAh) Format when nNVCfg2.enVT = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 104  
Table 63. nFullSOCThr (1C6h)/FullSOCThr (013h) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105  
Table 64. VEmpty (03Ah)/nVEmpty (19Eh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105  
Table 65. nConfig Register (1B0h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106  
Table 66. Config Register (00Bh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106  
Table 67. Config2 Register (0ABh) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106  
Table 68. nNVCfg0 Register (1B8h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 108  
Table 69. nNVCfg1 Register (1B9h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109  
Table 70. nNVCfg2 Register (1BAh) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 110  
Table 71. nHibCfg Register (1BBh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111  
Table 72. FilterCfg (029h)/nFilterCfg (19Dh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111  
Table 73. MiscCfg (00Fh)/nMiscCfg (1B2h) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 112  
Table 74. RelaxCfg (0A0h)/nRelaxCfg (1B6h) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 113  
Table 75. LearnCfg (0A1h)/nLearnCfg (19Fh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114  
Table 76. nTTFCfg Register (1C7h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 115  
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Maxim Integrated | 15  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
LIST OF TABLES (CONTINUED)  
Table 77. nConvgCfg Register (1B7h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116  
Table 78. nRippleCfg Register (1B1h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116  
Table 79. SOCHold (0D0h) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116  
Table 80. FStat Register (03Dh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118  
Table 81. DevName Register (021h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119  
Table 82. nROMID Registers (1BCh to 1BFh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119  
Table 83. VAlrtTh (001h)/nVAlrtTh (18Ch) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121  
Table 84. TAlrtTh (002h)/nTAlrtTh (18Dh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121  
Table 85. SAlrtTh (003h)/nSAlrtTh (18Fh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121  
Table 86. IAlrtTh (0ACh)/nIAlrtTh (18Eh) Register Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122  
Table 87. Top Level Memory Map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123  
Table 88. Individual Registers . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 123  
Table 89. ModelGauge m5 Register Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 124  
Table 90. Nonvolatile Register Memory Map (slave address 16h) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 125  
Table 91. History Recall Command Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127  
Table 92. Number of Remaining Config Memory Updates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128  
Table 93. Total Bytes Freeable for User Memory . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128  
Table 94. Making Nonvolatile Memory Available for User Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129  
Table 95. Nonvolatile Memory Configuration Options. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130  
Table 96. Fibonacci Configuration Settings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134  
Table 97. Longest Update Interval (in battery cycles). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135  
Table 98. Saving Schedule Example With the Most Preferred Configurations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135  
Table 99. CommStat Register (061h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136  
Table 100. Format of LOCK Command. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137  
Table 101. Format of Lock Register (07Fh) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 137  
Table 102. Number of Remaining Secret Updates . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 147  
Table 103. SBS Register Space Memory Map . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 149  
Table 104. sManfctAccess Register (100h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150  
Table 105. Protection Mode Codes. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150  
Table 106. sBatteryMode Register (103h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 151  
Table 107. BatteryStatus Register (116h) Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152  
Table 108. SpecInfo Register (11Ah) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
Table 109. sManfctrDate Register (11Bh) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153  
Table 110. nDesignVoltage Register (1E3h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155  
Table 111. nSBSCfg Register (1B4h) Format . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155  
Table 112. SBS to Nonvolatile Memory Mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156  
Table 113. nCGain Register Settings to Meet SBS Compliance. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156  
Table 114. 2-Wire Slave Addresses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 159  
www.maximintegrated.com  
Maxim Integrated | 16  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
LIST OF TABLES (CONTINUED)  
Table 115. Valid SBS Read Block Registers. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 163  
Table 116. 1-Wire Net Address Format. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165  
Table 117. All Function Commands . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169  
2
Table 118. I C Slave Address = 0x16 (SBS Memory Area) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170  
www.maximintegrated.com  
Maxim Integrated | 17  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Absolute Maximum Ratings  
IN to GND............................................................... -0.3V to +20V  
BATTS to GND..................... -0.3V to min of (IN + 0.3 and +20)V  
CELL3, CELL2, CELL1 to GND ...... -0.3V to min of (IN + 0.3 and  
BATTS + 0.3)V  
BATTS to CELL3 (Balancing switches).................. -0.3V to +20V  
CELL3 to CELL2 (Balancing switches) .................. -0.3V to +20V  
CELL2 to CELL1 (Balancing switches) .................. -0.3V to +20V  
CELL1 to GND (Balancing switches) ..................... -0.3V to +20V  
CP to GND.............................................................. -0.3V to +36V  
CP to IN.................................................................. -0.3V to +36V  
CHG to GND.................................................. IN - 0.3 to CP + 0.3  
DIS to GND......................................... PCKP - 0.3V to CP + 0.3V  
PCKP, ZVC to GND................................................ -0.3V to +28V  
SCL, SDA, ALRT to GND .......................................-0.3V to +20V  
REG3, AOLDO to GND.............................................-0.3V to +6V  
PFAIL, TH1, TH2, TH3, TH4 to GND..........-0.3V to REG3 +0.3V  
REG2 to GND ........................................................-0.3V to +2.2V  
CSN to GND ................................................................-2V to +2V  
CSP to GND...........................................................-0.3V to +0.3V  
Continuous Current of Balancing Switches........................100mA  
Continuous Current between ZVC and IN ...........................50mA  
Continuous Power Dissipation (Single-Layer Board) (T = +70°C,  
A
derate 65mW/°C above +70°C) ......................................1000mW  
Continuous Power Dissipation (Multilayer Board) (T = +70°C,  
A
derate 55mW/°C above +70°C) ......................................1950mW  
Operating Temperature Range.............................-40°C to +85°C  
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the  
device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for  
extended periods may affect device reliability.  
www.maximintegrated.com  
Maxim Integrated | 18  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Package Information  
30 WLP  
Package Code  
W302O2+1  
Outline Number  
21-100381  
Land Pattern Number  
Thermal Resistance, Four-Layer Board:  
Refer to Application Note 1891  
Junction to Ambient (θ  
)
49°C/W  
N/A  
JA  
Junction to Case (θ  
)
JC  
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Maxim Integrated | 19  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
24 TQFN  
Package Code  
T2444+4C  
21-0139  
90-0022  
Outline Number  
Land Pattern Number  
Thermal Resistance, Single-Layer Board:  
Junction to Ambient (θ  
)
68°C/W  
11°C/W  
JA  
Junction to Case (θ  
)
JC  
Thermal Resistance, Four-Layer Board:  
Junction to Ambient (θ  
)
60°C/W  
11°C/W  
JA  
Junction to Case (θ  
)
JC  
For the latest package outline information and land patterns (footprints), go to www.maximintegrated.com/packages. Note that a “+”, “#”, or “-” in the package code indicates  
RoHS status only. Package drawings may show a different suffix character, but the drawing pertains to the package regardless of RoHS status.  
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer board. For detailed information on package thermal  
considerations, refer to www.maximintegrated.com/thermal-tutorial.  
www.maximintegrated.com  
Maxim Integrated | 20  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Electrical Characteristics  
(IN = 4.2V to 18V, T = -40°C to +85°C, typical values are T = +25°C, see the schematic in the Functional Diagram. Limits are 100%  
A
A
tested at T = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and  
A
characterization.)  
PARAMETER  
POWER SUPPLY  
Supply Voltage  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
IN  
4.2  
18  
V
Shutdown Supply  
Current  
I
Shutdown, V  
= 18V, +25°C  
BATT  
2.2  
16  
3.5  
μA  
DD0  
Ship Mode Supply  
Current  
I
I
T
T
≤ +50°C  
25  
57  
μA  
μA  
DD1  
A
≤ +50°C, average current, not  
A
Active Supply Current  
including thermistor measurement  
current, AOLDO off  
38  
DD2  
REG3 Voltage  
REG2 Voltage  
V
V
3.4  
1.8  
1.8  
3.4  
V
V
REG3  
REG2  
1.8V output, I  
3.4V output, I  
= 2mA  
= 2mA  
1.62  
3
1.98  
3.8  
LOAD  
LOAD  
Always-On LDO Voltage  
V
V
V
AOLDO  
CHARGE PUMP  
1.5 x IN -  
1
1.5 x IN  
+ 1  
1.5 x IN < CP  
6V selection  
, V - IN  
REG CP  
1.5 x IN  
5
7
9
6
8
7
9
Charge Pump Output  
V
CP  
8V setting, V > 6V  
IN  
10V setting, V > 7.5V  
IN  
10  
11  
CHG DRIVER  
CHG is high, IN = 10V, 10MΩ resistor  
between CHG and IN  
CHG Driver Output  
V
CP - 0.1  
CP  
CP  
CP + 0.1  
V
CHGHIGH  
R
CHG is high  
CHG is low  
4000  
1000  
CHGON  
CHG Resistance  
Ω
R
CHGOFF  
DIS DRIVER  
DIS is high, IN = 10V, 10MΩ resistor  
between DIS and PCKP  
DIS Driver Output  
V
CP - 0.1  
CP + 0.1  
V
DISHIGH  
R
DIS is high  
DIS is low  
4000  
1000  
DISON  
DIS Resistance  
Ω
R
DISOFF  
ZERO-VOLT RECOVERY  
10mA Recovery  
current  
1.4  
2.1  
2.5  
2.4  
2.9  
3.4  
3.3  
3.8  
4.5  
30mA Recovery  
current  
ZVC Minimum Voltage  
V
IN = 0  
V
ZVCMIN  
50mA Recovery  
current  
ANALOG-TO-DIGITAL CONVERSION  
T
= +25°C (Note 10)  
-12.5  
-25  
+12.5  
+25  
Cell Voltage  
Measurement Error  
A
V
GERR  
mV  
(Note 10)  
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Maxim Integrated | 21  
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Electrical Characteristics (continued)  
(IN = 4.2V to 18V, T = -40°C to +85°C, typical values are T = +25°C, see the schematic in the Functional Diagram. Limits are 100%  
A
A
tested at T = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and  
A
characterization.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Cell Voltage Mismatch  
Error  
Cell voltage mismatch between channels  
(CELL1, 2, 3, 4) +25°C  
V
CMM  
-5  
+5  
mV  
T
20V  
= +25°C, IN = BATTS, from 4.2V to  
A
-30  
+30  
BATT Voltage  
Measurement Error  
VB  
VP  
mV  
GERR  
GERR  
IN = BATTS, from 4.2V to 20V  
-100  
-30  
+100  
+30  
T
A
= +25°C  
PCKP Voltage  
Measurement Error  
mV  
μV  
-100  
+100  
Cell Voltage  
Measurement  
Resolution  
V
Individual cell  
BATTS  
78.125  
312.5  
312.5  
LSB  
BATT Voltage  
Measurement  
Resolution  
VB  
VP  
μV  
μV  
LSB  
PCKP Voltage  
Measurement  
Resolution  
PCKP pin  
LSB  
Cell Voltage  
Measurement Range  
V
(Note 10)  
2.1  
4.2  
4.2  
4.9  
V
V
FS  
BATT Voltage  
Measurement Range  
VB  
VP  
BATTS pin  
19.6  
19.6  
FS  
FS  
PCKP Voltage  
Measurement Range  
PCKP pin  
V
Current Measurement  
Offset Error  
I
CSP = 0V, long-term average (Note 2)  
CSP between -50mV and +50mV  
±2  
μV  
OERR  
GERR  
Current Measurement  
Gain Error  
% of  
Reading  
I
-1  
+1  
Current Measurement  
Resolution  
I
1.5625  
±51.2  
±1  
μV  
mV  
ºC  
LSB  
Current Measurement  
Range  
I
FS  
Die Temperature  
Measurement Error  
TI  
GERR  
Die Temperature  
Measurement  
Resolution  
TI  
(Note 11)  
0.00391  
±1  
ºC  
LSB  
Thermistor  
Measurement Error  
% of  
Reading  
TE  
See the Thermistor Configuration section  
GERR  
RESISTANCE AND LEAKAGE  
Leakage Current,  
CELL1, CELL2, CELL3,  
BATTS, CSN, ALRT,  
I
ALRT < 15V, IN < CP < 30V  
-1  
+1  
μA  
LEAK  
PFAIL, ZVC, CHG, DIS  
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Maxim Integrated | 22  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Electrical Characteristics (continued)  
(IN = 4.2V to 18V, T = -40°C to +85°C, typical values are T = +25°C, see the schematic in the Functional Diagram. Limits are 100%  
A
A
tested at T = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and  
A
characterization.)  
PARAMETER  
SYMBOL  
CONDITIONS  
= 18V, I = 50mA, between  
BATTS - CELL3, CELL3 - CELL2, CELL2  
- CELL1, and CELL1 - CSP  
MIN  
TYP  
MAX  
UNITS  
V
BATT  
BAL  
Cell-Balancing  
Resistance  
R
3
9
20  
Ω
BAL  
PD  
Communication  
Removal Test Current  
I
SDA, SCL pin = 0.4V  
0.05  
0.2  
0.4  
0.4  
μA  
INPUT / OUTPUT  
Output Drive Low,  
ALRT, SDA/DQ, PFAIL  
V
OL  
I
I
= 4mA, REG3 = 3.4V  
= -1mA  
V
V
V
OL  
Output Drive High,  
PFAIL  
REG3-0.  
1
V
OH  
OH  
Input Logic High, SCL/  
OD, SDA/DQ, ALRT  
V
IH  
1.5  
Input Logic Low, SCL/  
OD, SDA/DQ, ALRT  
V
IL  
0.44  
V
ALRT Wake Debounce  
Sleep mode  
100  
ms  
COMPARATORS  
Overcurrent Threshold  
Offset Error  
OC  
OC  
OC, OD, or SC comparator  
OC, OD, or SC comparator  
-1.2  
-5.0  
+1.2  
+5.0  
mV  
OE  
GE  
Overcurrent Threshold  
Gain Error  
% of  
Threshold  
NONVOLATILE MEMORY  
Programming Supply  
Current  
Current from V  
programming  
for block  
BATT  
I
4
10  
7360  
1280  
5
mA  
ms  
PROG  
Block Programming  
Time  
t
368  
64  
BLOCK  
Page Programming  
Time  
SHA secret update or learned parameters  
update  
t
ms  
UPDATE  
Nonvolatile Memory  
Recall Time  
t
ms  
RECALL  
Write Capacity,  
Configuration Memory  
n
(Notes 2, 3, 4)  
(Notes 2, 3, 4)  
7
5
writes  
writes  
CONFIG  
Write Capacity, SHA  
Secret  
n
SECRET  
Write Capacity, Learned  
Parameters  
n
(Notes 2, 3, 4)  
(Note 2)  
99  
writes  
years  
LEARNED  
Data Retention  
t
10  
NV  
1-WIRE INTERFACE, REGULAR SPEED  
Time Slot  
t
60  
1
120  
μs  
μs  
μs  
μs  
SLOT  
Recovery Time  
Write-0 Low Time  
Write-1 Low Time  
t
REC  
t
t
60  
1
120  
15  
LOW0  
LOW1  
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Maxim Integrated | 23  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Electrical Characteristics (continued)  
(IN = 4.2V to 18V, T = -40°C to +85°C, typical values are T = +25°C, see the schematic in the Functional Diagram. Limits are 100%  
A
A
tested at T = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and  
A
characterization.)  
PARAMETER  
Read-Data Valid  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
μs  
t
15  
RDV  
Reset-Time High  
t
480  
480  
15  
μs  
RSTH  
Reset-Time Low  
t
960  
60  
μs  
RSTL  
Presence-Detect High  
Presence-Detect Low  
t
μs  
PDH  
t
60  
240  
μs  
PDL  
1-WIRE INTERFACE, OVERDRIVE SPEED  
Time Slot  
t
6
1
6
1
16  
μs  
μs  
μs  
μs  
μs  
μs  
μs  
μs  
μs  
SLOT  
Recovery Time  
t
REC  
Write-0 Low Time  
Write-1 Low Time  
Read-Data Valid  
Reset-Time High  
Reset-Time Low  
Presence-Detect High  
Presence-Detect Low  
t
t
16  
2
LOW0  
LOW1  
t
2
RDV  
t
48  
48  
2
RSTH  
t
80  
6
RSTL  
t
PDH  
t
8
24  
PDL  
2
2-WIRE INTERFACE (I C and SMBus)  
SCL Clock Frequency  
f
(Note 5)  
(Note 6)  
400  
kHz  
μs  
SCL  
Bus Free Time Between  
a STOP and START  
Condition  
t
1.3  
BUF  
Hold Time (Repeated)  
START Condition  
t
0.6  
1.3  
0.6  
μs  
μs  
μs  
HD:STA  
Low Period of SCL  
Clock  
t
LOW  
High Period of SCL  
Clock  
t
HIGH  
Setup Time for a  
Repeated START  
Condition  
t
0.6  
μs  
SU:STA  
Data Hold Time  
Data Setup Time  
t
(Notes 7, 8)  
(Note 7)  
0
0.9  
μs  
ns  
HD:DAT  
t
100  
SU:DAT  
Rise Time of Both SDA  
and SCL Signals  
t
5
5
300  
300  
ns  
ns  
μs  
R
Fall Time of Both SDA  
and SCL Signals  
t
F
Setup Time for STOP  
Condition  
t
0.6  
SU:STO  
Spike Pulse Width  
Suppressed by Input  
Filter  
t
(Note 9)  
50  
ns  
SP  
www.maximintegrated.com  
Maxim Integrated | 24  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Electrical Characteristics (continued)  
(IN = 4.2V to 18V, T = -40°C to +85°C, typical values are T = +25°C, see the schematic in the Functional Diagram. Limits are 100%  
A
A
tested at T = +25°C. Limits over the operating temperature range and relevant supply voltage range are guaranteed by design and  
A
characterization.)  
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
Capacitive Load for  
Each Bus Line  
C
400  
pF  
B
SCL, SDA Input  
Capacitance  
C
6
pF  
BIN  
SCL Low Timeout  
TIMING  
30  
ms  
Time-Base Accuracy  
SHA Calculation Time  
t
T
= +25°C  
-1  
+1  
10  
%
ERR  
A
t
4.5  
ms  
SHA  
PRE  
POR  
Time between turning on the TH bias and  
analog-to-digital conversions  
TH Precharge Time  
t
8.48  
ms  
Power-on-Reset Time  
Task Period  
t
(Note 7)  
10  
ms  
ms  
t
351.5  
TP  
Note 1: All voltages are referenced to CSP.  
Note 2: Specification is Guaranteed by Design (GBD); not production tested.  
Note 3: Write capacity numbers shown have one write subtracted for the initial write performed during manufacturing test to set  
nonvolatile memory to a known value.  
Note 4: Due to the nature of one-time programmable memory, write endurance cannot be production tested. Follow the nonvolatile  
memory and SHA secret update procedures detailed in the data sheet.  
Note 5: Timing must be fast enough to prevent the IC from entering shutdown mode due to bus being low for a period greater than the  
shutdown timer setting.  
Note 6: f  
must meet the minimum clock low time plus the rise/fall times.  
SCL  
Note 7: The maximum t  
can only be met if the device does not stretch the low period (t  
) of the SCL signal.  
LOW  
HD:DAT  
Note 8: This device internally provides a hold time of at least 100ns for the SDA signal (referred to as the minimum V of the SCL  
IH  
signal) to bridge the undefined region of the falling edge of SCL.  
Note 9: Filters on SDA and SCL suppress noise spikes at the input buffers and delay the sampling instant.  
Note 10: BATTS to CELL3, CELL3 to CELL2, CELL2 to CELL1, or CELL1 to CSP, cell voltages between 2.3V and 4.9V; BATTS and  
CELL1 must be used. Neighbor CELL pins should be shorted if there is no battery connected between them.  
Note 11: Specification is for TH1/TH2/TH3/TH4 channels.  
www.maximintegrated.com  
Maxim Integrated | 25  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Typical Operating Characteristics  
(T = +25°C, unless otherwise noted.)  
A
www.maximintegrated.com  
Maxim Integrated | 26  
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Typical Operating Characteristics (continued)  
(T = +25°C, unless otherwise noted.)  
A
www.maximintegrated.com  
Maxim Integrated | 27  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Typical Operating Characteristics (continued)  
(T = +25°C, unless otherwise noted.)  
A
www.maximintegrated.com  
Maxim Integrated | 28  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Typical Operating Characteristics (continued)  
(T = +25°C, unless otherwise noted.)  
A
www.maximintegrated.com  
Maxim Integrated | 29  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Pin Configurations  
WLP  
TOP VIEW  
(BUMP SIDE DOWN)  
MAX17320X  
1
2
3
4
5
6
+
A
B
C
D
E
BATTS  
IN  
CP  
CHG  
DIS  
PCKP  
SCL/  
OD  
CELL3  
CELL2  
CELL1  
GND  
TH4  
TH3  
NC  
NC  
NC  
NC  
ZVC  
ALRT  
SDA/  
DQ  
TH2  
NC  
NC  
AOLDO  
REG3  
TH1  
REG2  
CSP  
CSN  
PFAIL  
(30-BUMP WLP, 0.4mm PITCH)  
www.maximintegrated.com  
Maxim Integrated | 30  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
TQFN  
TOP VIEW  
MAX17320G  
(24-PIN TQFN, 4mm x 4mm)  
Pin Description  
PIN  
NAME  
FUNCTION  
WLP  
TQFN  
Power Supply Input. Connect to the positive terminal of cell stack with a 10Ω  
resistor. Bypass with a 0.1µF/25V ceramic capacitor to GND.  
A2  
1
2
IN  
Charge Pump Output and Bypass. Bypass CP to IN with a 0.47μF/25V ceramic  
capacitor.  
A3  
A4  
A5  
CP  
Charge FET Gate Control. Enable/disable the high-side CHG N-FET by driving the  
gate between CP and IN. Connect a 0.1μF capacitor from Charge FET gate to  
source.  
3
4
CHG  
DIS  
Discharge FET Gate Control. Enable/disable the high-side DIS N-FET by driving  
the gate between CP and PCKP.  
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Maxim Integrated | 31  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Pin Description (continued)  
PIN  
NAME  
FUNCTION  
WLP  
TQFN  
Zero-Volt Charge Path. Recovery charge current is set by the resistor from the  
PCKP pin to the ZVC pin. Leave ZVC open if not used.  
B5  
5
ZVC  
A6  
C5  
6
7
PCKP  
ALRT  
Connect to Positive Terminal of Pack Connector Through 1kΩ  
Programmable Alert Output  
2
Serial Clock Input for I C Communication or Speed Selection for 1-Wire  
2
Communication. Input only. For I C communication, connect to the clock terminal  
B6  
8
SCL/OD  
of the battery pack. Connect to CSN for standard speed 1-Wire communication.  
Connect to the REG3 pin for overdrive 1-Wire communication. SCL/OD has an  
internal pulldown (IPD) for sensing pack disconnection.  
2
Serial Data Input/Output for Both 1-Wire and I C Communication Modes. Open-  
C6  
D6  
E6  
9
SDA/DQ  
TH1  
drain output driver. Connect to the DATA terminal of the battery pack. SDA/DQ  
has an internal pulldown (IPD) for sensing pack disconnection.  
Thermistor Input 1. Connect a 10k/100k thermistor from TH1 to GND. Leave  
disconnected or connect to GND if not used.  
10  
11  
Permanent Failure Indicator. Connect to a three terminal fuse to take action in  
case of primary FET failure detection. If not used, connect to GND with a 1kΩ  
resistor.  
PFAIL  
Always-On LDO. Configurable as 3.4V or 1.8V. Bypass to GND with a 0.47µF/10V  
ceramic capacitor. Connect to GND with a 10kΩ resistor if not used.  
D5  
E5  
E4  
E3  
D2  
E2  
C2  
B2  
E1  
12  
13  
14  
15  
16  
17  
18  
19  
20  
AOLDO  
REG3  
CSN  
Internal 3.4V Regulator Output. Bypass to GND with a 0.47µF/10V ceramic  
capacitor.  
System Ground and Current Measurement Negative Sense Point. Kelvin connect  
to load side of the sense resistor.  
Device Ground and Current Measurement Positive Sense Point. Kelvin connect to  
cell side of the sense resistor.  
CSP  
Thermistor Input 2. Connect 10k/100k thermistor from TH2 to GND. Leave  
disconnected or connect to GND if not used.  
TH2  
Internal 1.8V Regulator Output. Bypass to GND with a 0.47µF/10V ceramic  
capacitor.  
REG2  
TH3  
Thermistor Input 3. Connect a 10k/100k thermistor from TH3 to GND. Leave  
disconnected or connect to GND if not used.  
Thermistor Input 4. Connect a 10k/100k thermistor from TH4 to GND. Leave  
disconnected or connect to GND if not used.  
TH4  
Ground Pin. Connect to ground. Do not share the ground trace with the CSP  
Kelvin-sense trace.  
GND  
D1  
C1  
B1  
21  
22  
23  
CELL1  
CELL2  
CELL3  
Cell Voltage Sense 1. Used for cell balancing and voltage sensing.  
Cell Voltage Sense 2. Used for cell balancing and voltage sensing.  
Cell Voltage Sense 3. Used for cell balancing and voltage sensing.  
Battery Voltage Sense of Top Cell in Series Stack. Used for cell balancing and  
voltage sensing.  
A1  
24  
BATTS  
No Connect. The NC pins are not internally connected and can be used for routing  
vias in certain cases. B3, C3, D3 can take a via from ZVC and ALRT. B4, C4, D4  
can take a via from TH2, TH3, TH4 and AOLDO. Other placement of the vias  
under the NC pins could cause noise to couple to the IC.  
B3, B4, C3,  
C4, D3, D4  
NC  
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Maxim Integrated | 32  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Functional Diagrams  
Block Diagram  
3 TERM  
FUSE  
PACK+  
1kΩ  
PERMANENT  
FAILURE  
DETECTION  
CHARGE DETECT  
SHORT-CIRCUIT DETECT  
SHORT-CIRCUIT REMOVE  
PCKP  
CHG  
DIS  
IN  
BATT CP  
CP  
PCKP  
PFAIL  
PCKP PULLDOWN (PKSINK)  
N
RZVC  
INTERNAL SELF-DISCHARGE DETECT  
10kΩ  
ZVC  
GND  
ZVC PATH  
PUMP  
0.47µF  
0.1µF  
10Ω  
AOLDO  
3.4V OR 1.8V  
0.47µF  
AOLDO  
OPTIONAL  
ALWAYS-ON SUPPLY  
IN  
IN  
OUT  
IN  
1.8V LDO  
RBAL4  
REG2  
BATTS  
OUT  
0.47µF  
0.47µF  
0.1µF  
0.1µF  
MAX17320  
9Ω  
3.4V LDO  
REG3  
ALRT  
IN  
OUT  
RBAL3  
CELL3  
9Ω  
RBAL2  
CELL2  
MODELGAUGE M5  
CORE  
150Ω  
150Ω  
0.1µF  
0.1µF  
SDA/DQ  
SCL/OD  
9Ω  
I2C/1-WIRE  
INTERFACE  
RBAL1  
CELL1  
MUX  
INTERNAL  
TEMPERATURE  
SENSOR  
REG3  
4.7V  
4.7V  
9Ω  
TH BIAS  
OPTIONAL THERMISTORS  
TH4  
TH3  
TH2  
TH1  
PCKP  
CURRENT  
COMPARATORS  
GND  
CSP  
CSN  
PACK-  
RSENSE  
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Maxim Integrated | 33  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Detailed Description  
General Description  
The MAX17320 is a 38μA I stand-alone pack-side fuel gauge IC with protector and optional SHA-256 authentication for  
Q
2-, 3-, or 4-cell lithium-ion/polymer batteries which implements Maxim's ModelGauge m5 algorithm without requiring host  
interaction for configuration. This makes the IC an excellent pack-side fuel gauge. The IC monitors the voltage, current,  
temperature, and state of the battery to ensure that the lithium-ion/polymer battery is operating under safe conditions to  
prolong the life of the battery. Voltage of each cell of the the battery pack is measured at the CSP or GND/CELL1/CELL2/  
CELL3/BATTS connections. The total pack voltage is measured at BATTS and PCKP. Current is measured with an  
external sense resistor placed between the CSP and CSN pins. Power and average power are also reported. Up to four  
external NTC thermistor connections allow the IC to measure temperature of the cells in the battery pack by monitoring  
the TH1-4 pins. The TH1-4 pins provide an internal pullup for the thermistor that is disabled internally when temperature  
is not being measured. Internal die temperature of the IC is also measured and can be a proxy for the protection FET  
temperature if they are located close by the IC.  
The IC provides programmable discharge protection for overdischarge currents (fast, medium, and slow protection),  
overtemperature, and undervoltage. The IC also provides programmable charge protection for overvoltage, over/  
undertemperature, overcharge currents (fast and slow), cell imbalance, internal self-discharge, charge done, charger  
communication timeout, precharge fault, and overcharge capacity fault. The IC provides a fast ideal diode discharge  
response that allows the battery to provide energy to the system even while the charge fault persists. The IC provides  
programmable charging current/voltage prescription following 6 JEITA temperature zones as well as step-charging. The  
IC provides additional protection to permanently disable the battery by overriding a secondary protector or blowing a  
fuse in severe fault conditions. This is useful when the IC has detected a primary protection FET failure and is unable to  
block charge/discharge any other way. The IC also modulates the CHG FET to regulate prequalification charge current  
until the cells cross the prequalification voltage threshold eliminating the need for external precharge circuit. Additional  
functionality is described in the Protector section.  
The IC supports a low-power shutdown mode. The IC enters this low-power mode by command or if communication  
collapsed (if enabled). The IC wakes up from this low-power mode by communication (if battery voltage is above  
the undervoltage threshold), charger detection, or pushbutton/system presence wakeup (if enabled and installed).  
Pushbutton/system presence wakeup allows a pack to completely disconnect from a system during shipping, yet wakeup  
immediately upon the user pressing the button or detecting the system presence, not needing the user to plug in a  
charger.  
The ModelGauge m5 algorithm combines the short-term accuracy and linearity of a coulomb counter with the long-  
term stability of a voltage-based fuel gauge, along with temperature compensation to provide industry-leading fuel-gauge  
accuracy. Additionally, the algorithm does not suffer from abrupt corrections that normally occur in coulomb-counter  
algorithms, since tiny continual corrections are distributed over time. The IC automatically compensates for aging,  
temperature, and discharge rate and provides accurate state-of-charge (SOC) in milliampere-hours (mAh) or percentage  
(%) over a wide range of operating conditions. Fuel gauge error always converges to 0% as the cell approaches empty.  
Dynamic power functionality provides the instantaneous maximum battery output power which can be delivered to the  
system without violating the minimum system input voltage. The IC provides accurate estimation of time-to-empty and  
time-to-full and provides three methods for reporting the age of the battery: reduction in capacity, increase in battery  
resistance, and cycle odometer. In addition, age forecasting allows the user to estimate the expected lifespan of the cell.  
The IC provides a configurable always-on LDO (1.8V or 3.4V) that can power small critical loads (less than 2mA) inside  
the battery or on the system side without overloading the cells even under fault conditions.  
To prevent battery clones, the IC integrates SHA-256 authentication with a 160-bit secret key. Every IC also incorporates  
a 64-bit unique identification number (ROM ID). Additionally, up to 84 bytes of user memory (NVM) can be made available  
to store custom information.  
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Maxim Integrated | 34  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
2
Communication to the host occurs over a Maxim 1-Wire or standard I C/SMBus interface. SCL/OD is an input from the  
host, and SDA/DQ is an open-drain I/O pin that requires an external pullup. The ALRT pin is an output that can be used  
as an external interrupt to the host processor if voltage, current, temperature, state-of-charge, or protection conditions  
(configurable) are detected. The IC offers a pushbutton feature that can be used to wake up the system after cutting  
power off from the system using the protection FETs, for the purpose of extending the shelf life of the battery.  
For additional reference material, refer to the following Application Notes:  
Application Note 7177: MAX17320 Battery Pack Implementation Guide  
Application Note 7161: MAX17320 Host Software Implementation Guide  
Protector  
Lithium-ion/polymer batteries are very common in a wide variety of portable electronic devices because they have very  
high energy density, minimal memory effect and low self-discharge. However, care must be taken to avoid overheating  
or overcharging these batteries to prevent damage to the batteries potentially resulting in dangerous outcomes/explosive  
results. By operating in safe temperature ranges, at safe voltages and current levels, the overall safety of the lithium-ion/  
polymer batteries can be assured throughout the life of the battery.  
Simple protection schemes are available to protect a battery from exceeding the safe levels. These schemes include  
protection for overdischarge current, short-circuit current, overcharge current, undervoltage, and overvoltage. The  
next level of protection offers smart protection schemes which include protection for under OCV (SmartEmpty), long  
overdischarge current, overtemperature limits for charge and discharge, undertemperature charge limits, and charge-  
done protection. The IC provides all of these simple and smart protection schemes with programmable thresholds and  
programmable timer delays for each fault.  
The IC provides additional protection functionality beyond these schemes as follows:  
Discharging Protection Functionality  
Overcurrent: (see nODSCCfg and nODSCTh)  
Fast Short-Circuit (70μs to 985μs): The short-circuit hardware comparator is programmable from 5mV to 155mV  
with delay programmable from 70μs to 985μs.  
Medium (1ms to 15ms): The overdischarge current hardware comparator is programmable from 2.5mV to 77.5mV  
with delay programmable from 1ms to 15ms.  
Slow (351ms to 35s): Slow overdischarge protection is programmable from 0mV to 51.2mV in 0.2mV steps with  
delay programmable from 351ms to 35s (see nDelayCfg and nIPrtTh1).  
Overtemperature:  
Hot (OTPD—Overtemperature Discharge): Discharge overtemperature (OTPD, see nProtMiscTh) is separately  
programmable from charge overtemperature (OTPC). OTPD is typically a higher temperature than OTPC, since  
charging while hot is more hazardous than discharging. OTPD is programmable in 1°C steps, with a programmable  
timer (see nDelayCfg), and is based on the hottest of the enabled thermistors.  
Die-Hot: The IC measures die temperature as well as up to four thermistor temperatures. Since the IC is  
generally located close to the external FETs, the die temperature can indicate when the FETs are overheating. This  
separately programmable threshold (see nProtMiscTh) blocks both charging and discharging.  
Permanent-Fail-Hot: When a severe overtemperature is detected, the fault is recorded into NVM and permanently  
disables the charge and discharge FETs and blows the three terminal fuse if enabled.  
Undervoltage (UVP): Undervoltage is protected by two thresholds: UVP (undervoltage protect) and UOCVP (under  
OCV protect—SmartEmpty) (see nUVPrtTh register for details).  
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Maxim Integrated | 35  
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Charging Protection Functionality:  
Overvoltage (OVP): Overvoltage protection is programmable with 20mV resolution (see nOVPrtTh). Temperature-  
region dependent OVP protection is also provided for cold/room/warm and hot temperature regions (see nJEITAV).  
OVP detection is debounced with a programmable timer (see nDelayCfg). An additional, higher OVP permanent  
failure threshold is programmable, which records any excessive OVP into NVM and permanently disables the charge  
and discharge FETs and blows the three terminal fuse if enabled.  
Charge Temperature Protection: Temperature protection thresholds are debounced with a programmable timer (see  
nDelayCfg) and are based on the hottest and coldest of the enabled thermistors.  
Hot (OTPC): Charging temperature protection is programmable with 1°C resolution (see nTPrtTh1).  
Cold (UTP): Charging is blocked at cold, programmable with 1°C resolution (see nTPrtTh1).  
Each threshold operates with a 1°C hysteresis.  
Overcharge-Current Protection:  
Fast: Overcharge current is detected by a programmable hardware comparator and debounce timer between 0mV  
to 38.75mV and 1ms to 15ms thresholds.  
Slow: A lower and slower overcharge-current protection ensures that more moderate high currents do not persist  
for a long time. Slow overcharge protection is programmable from 0mV to 51.2mV in 0.2mV steps, with an delay  
programmable between 0.35s and 35s (see nDelayCfg and nIPrtTh1). Additionally, with nNVCfg1.enJP = 1, this  
overcurrent-protection threshold is modulated according to temperature region (see nJEITAC).  
Charge-Done: If enabled, the IC turns off the charge FET whenever charge termination is detected according to  
termination current and timeout. (See nDelayCfg and nIChgTerm). The charge FET is turned on when discharging  
or charger removal is eventually detected. Also, charging resumes (charge FET turns on) if battery discharges below  
programmable threshold (VFSOC < FullSOCThr).  
Charger-Communication Timeout: If enabled, during charging the IC turns off the charge FET if the host has  
stopped communicating beyond a timeout configurable from 11s to 3 minutes (see nDelayCfg). In systems which  
consult the battery for prescribing the charge current or charge voltage, especially to apply JEITA thresholds or step-  
charging, this feature is useful to protect against uncontrolled charging after an operating system crash or shutdown.  
Overcharge-Capacity Fault: If any charge session delivers more charge (coulombs) to the battery than the expected  
full design capacity, charging is blocked, if the feature is enabled. This threshold is programmable as a percentage  
(see nProtMiscTh.QOvflwTh) beyond the design capacity.  
Cell Imbalance Fault: During charging the IC monitors the individual cell voltages and, if enabled, turns off the  
charge FET if any cell imbalance is greater than programmable threshold (see nBalTh.Imbalance).  
Other Faults:  
Nonvolatile CheckSum Failure: If enabled (nNVCfg1.enProtChkSm), the IC blocks charge and discharge when  
startup checksum of protector NVM does not match the value stored in nProtCfg2.CheckSum.  
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Maxim Integrated | 36  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Other Protection Functionality:  
Zero-Volt Charging: The IC allows charging when the battery voltage is at or above 4.2V (ZVC disabled). To enable  
the charging of battery between 0.0V and 4.2V, ZVC must be enabled. A resistor between ZVC and PCKP is used to  
enable ZVC and set the maximum recovery current. See the Zero-Volt Charging section for more details.  
Overdischarge-Removal Detection: Following any overdischarge current fault, after the IC turns off the discharge  
FET, it tests for load removal by sourcing 30μA into PCKP. Load removal is detected when PCKP exceeds 1V. This  
low threshold is intentionally below the startup voltage of most ICs in order to allow active loads by external ICs while  
rejecting passive loads by resistors (short-circuit, failed components, etc.).  
Charger Removal Detection: Following any charge fault, after the IC turns off the charge FET, it measures  
PCKP to detect the removal of the offending charger. Charger removal is detected when PCKP falls below BATT -  
nOVPrtTh.ChgDetTh or whenever discharge current is detected.  
Battery Internal Self-Discharge Detection: The IC measures the internal self-discharge of the battery that might  
indicate health or safety problems. The IC alerts the system or turns off the charge and discharge FETs when a  
leakage is detected above the configurable threshold. See the Battery Internal Self-Discharge section for more details.  
Ideal-Diode Control: During any charge fault, the charge FET turns on when a discharge current is detected, with up  
to 350ms delay. This ideal diode behavior reduces the heat and voltage drop associated with the body diode during  
protection faults. All discharge-only faults are released when the charger is connected. See the Charger Presence  
and Ideal Diode Behavior section for more details.  
Protection Fault Reporting:  
Protection Fault Status: Each charge and discharge fault state is latched in the ProtStatus register. When the fault  
is cleared, the corresponding bit is cleared.  
Protection Fault Alerts: The ProtAlrt register latches the status of any previous faults detected by the device. Once  
a fault is detected, the corresponding bit remains set until it is cleared by the host. Additionally, the Status.ProtAlrt bit  
is set when any ProtAlrt bit is set.  
Protection Fault Logging: The nFaultLog register also indicates which protection events happened during each  
history log period.  
Charging Prescription Registers: The ChargingVoltage and ChargingCurrent registers can guide the charger  
according to a recommended charging profile. This can include the following knowledge which generally is associated  
with a particular battery and may be stored in the battery with the IC:  
Factory Recommended Charging Current and Voltage: This is useful when a system involves multiple battery  
vendors, swappable batteries, aftermarket batteries, or legacy system support.  
Charging Modifications According to Battery Temperature: Significantly above and below room temperature,  
most cell manufacturers recommend charging at reduced current and lower termination voltage to assure safety and  
improve lifespan. The IC modulates its guidance according to TooCold/Cold/Room/Warm/Hot/TooHot programmable  
temperature regions (see nTPrtTh1/2/3). Both charging current and voltage are modulated at Cold/Warm/Hot,  
targeting charge settings lower than Room (see nJEITAV and nJEITAC).  
Step-Charging: A common practice to balance lifespan and charge speed is to apply step-charging profiles (see the  
Step-Charging section). The IC supports three programmable steps with programmable charge currents and voltages.  
At a high level, the IC protector has dual state-machines as shown in Figure 1. Each charge and discharge fault state is  
latched in the ProtStatus register, where each fault obeys a separate instance of the state machine shown in Figure 1.  
Any single charge fault opens the charge FET to block charge current (charge faults are OR'd together). All charge faults  
must be released to allow charge to resume (charge fault release conditions are AND'd together). The behavior is similar  
for blocking discharge.  
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Maxim Integrated | 37  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
CHARGE FAULT (OR’D)  
BLOCK CHARGE  
CHARGEGOOD = 0  
ALLOW CHARGE  
CHARGEGOOD = 1  
CHARGE FET ENABLED IF  
(NO CHARGE FAULTS OR DISCHARGING)  
CHARGE FAULTS RELEASED (AND’D)  
DISCHARGE FAULT (OR’D)  
DISCHARGE FET ENABLED IF  
(NO DISCHARGE FAULTS OR CHARGING)  
BLOCK DISCHARGE  
DISGOOD = 0  
ALLOW DISCHARGE  
DISGOOD = 1  
DISCHARGE FAULTS RELEASED (AND’D)  
Figure 1. Simplified Protector State Machine  
The IC includes a write protection and a permanent locking function. The write protection prevents accidental overwrites  
of protection parameters. This protection must be cleared before updating any registers and should be set after  
configuration changes are made. The permanent locks prevent intentional or malicious tampering, and should be enabled  
after development is completed and the battery pack is ready to ship in production. See the Memory Locks and Write  
Protection section for more details.  
The protector registers are summarized by their protection function in Table 1 and are graphically shown across the  
various temperature ranges in Figure 2 and Figure 3.  
Table 1. Summary of Protector Registers by Function  
FUNCTION  
REGISTER  
Voltage Thresholds  
Permanent Fail Overvoltage Protection  
Overvoltage Protection  
nOVPrtTh  
nJEITAV, nOVPrtTh  
nOVPrtTh  
Overvoltage Protection Release  
UnderOCV Protection  
nUVPrtTh  
Undervoltage Protection  
Undervoltage Shutdown  
Prequal Voltage  
nUVPrtTh  
nUVPrtTh  
nChgCfg  
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Maxim Integrated | 38  
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Table 1. Summary of Protector Registers by Function (continued)  
Current Thresholds  
(See Figure 6 for timing details on current thresholds)  
Fast Overcharge Protection  
Slow Overcharge Protection  
Slow Overdischarge Protection  
Fast Overdischarge Protection  
Short-Circuit Protection  
Charging Detected  
nODSCTh, nODSCCfg  
nIPrtTh1  
nIPrtTh1  
nODSCTh, nODSCCfg  
nODSCTh, nODSCCfg  
nProtMiscTh  
Discharging Detected  
nProtMiscTh  
Charge Termination Current  
Temperature Thresholds  
Fault Timers  
nIChgTerm  
nTPrtTh1, nTPrtTh2, nTPrtTh3, nProtMiscTh  
nDelayCfg, nODSCCfg  
nBalTh  
Cell Balancing Thresholds  
Charging Prescription  
(ChargingCurrent, ChargingVoltage registers)  
Charging Voltage  
Charging Current  
nJEITAV  
nJEITAC  
Prequal Current  
nChgCfg  
nStepChg  
Step Charging  
Protection Status/Configuration  
nProtCfg, ProtStatus, nBattStatus, ProtAlrt, nFaultLog  
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Maxim Integrated | 39  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
4.51V  
PERM FAIL OVP  
4.25V  
OVERVOLTAGE  
PROTECTION  
STEP-CHARGING  
4.21V  
OVP RELEASE  
JEITA CHARGING VOLTAGE  
STEPV2  
4.2V  
CHARGING VOLTAGE  
STEPV1  
STEPV0  
STEPV1  
STEPV0  
TOO COLD  
COLD  
ROOM  
10 TEMPERATURE (°C) 40  
3.7V  
WARM  
HOT  
TOO HOT  
45  
55 75  
90 85  
0
COLD ROOM WARM HOT  
CHARGING  
VOLTAGE  
4.14V  
4.1V  
4.2V  
4.16V 4.14V 4.12V  
4.1V 4.08V  
4.18V 4.16V  
DESIGN VOLTAGE  
3.3V  
VEMPTY  
2.92V  
STEPV1  
STEPV0  
4.06V 4.12V  
UOCV PROTECTION  
2.6V  
UV PROTECTION AND PREQUAL VOLTAGE  
2.3V  
UV SHUTDOWN  
4.2V (PACK VOLTAGE)  
MINIMUM OPERATING VOLTAGE  
Figure 2. Programmable Voltage Thresholds (Default Values Shown) (All Voltages are per Cell)  
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Maxim Integrated | 40  
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
7000mA  
FAST OVERCHARGE PROTECTION  
6000mA  
SLOW OVERCHARGE  
PROTECTION  
STEP-CHARGING  
CHARGING CURRENT  
2000mA  
CHARGING CURRENT  
STEPCURR1  
STEPCURR2  
STEPCURR1  
STEPCURR2  
TOO  
COLD  
COLD  
ROOM  
WARM  
HOT  
TOO HOT  
15mA  
COLD ROOM WARM HOT  
0.75C 1C 0.88C 0.625C  
PRECHARGE  
7.5mA CURRDET  
CHARGING  
CURRENT  
STEPCURR1 0.38C C/2 0.44C 0.31C  
STEPCURR2 0.19C C/4 0.22C 0.15C  
10TEMPERATURE (°C) 35  
45  
60 70 75  
80  
-10  
-6000mA  
SLOW OVERDISCHARGE PROTECTION  
-8000mA  
FAST OVERDISCHARGE PROTECTION  
-10000mA  
SHORT-CIRCUIT PROTECTION  
Figure 3. Programmable Current Thresholds (Default Values Shown With 5mΩ Sense Resistor)  
Protector Thresholds  
The IC provides for a variety of programmable protector thresholds that are stored in nonvolatile memory. These  
thresholds are for voltage, current, temperature, and timer delays.  
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Maxim Integrated | 41  
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Voltage Thresholds  
All of the voltage thresholds of the IC are shown graphically in Figure 2 and in table form with details of each threshold  
and the registers used to set the various thresholds in Table 2. The description of each register provides additional  
guidance for selection of the register value.  
Table 2. Voltage Thresholds (All Voltages are per Cell)  
EXAMPLE  
(ALL  
CONFIGURATION  
NAME  
DESCRIPTION  
VOLTAGES  
ARE PER  
CELL)  
REGISTERS  
ChargingVoltage[temp] +  
Permanent Fail Both FETs are permanently OFF after this threshold is exceeded  
nOVPrtTh.(dOVP +  
4.51V  
Overvoltage  
beyond PermFailTimer. PFAIL is driven high to blow fuse if enabled.  
OVPPermFail)  
Overvoltage  
(With 4 JEITA  
Zones)  
Programmable Overvoltage at each JEITA zone. Delta V added to  
ChargingVoltage (nJeitaV) to set the OVP fault threshold. 10 mV  
step size. Protection range from 3.9V to 4.88V.  
{4.14V/4.2V/  
4.18V/4.16V} +  
50mV  
ChargingVoltage[temp] +  
nOVPrtTh.dOVP  
{4.19V/4.25V/  
4.23V/4.21V}  
- 10mV  
Overvoltage  
Release  
Programmable release hysteresis. Fault released when VCell drops  
below this threshold and discharging is detected.  
Overvoltage -  
nOVPrtTh.dOVPR  
ChargeVoltage-  
Room  
ChargingVoltage output, 5mV resolution.  
ChargingVoltage output, 10mV resolution.  
ChargingVoltage output, 10mV resolution.  
ChargingVoltage output, 10mV resolution.  
nJEITAV.Room  
4.20V  
4.16V  
4.18V  
4.14V  
ChargeVoltage-  
Hot  
nJEITAV.(Room - Hot)  
ChargeVoltage-  
Warm  
nJEITAV.(Room -  
Warm)  
ChargeVoltage-  
Cold  
nJEITAV.(Room - Cold)  
DesignVoltage  
EmptyVoltage  
SBS Design voltage, just for information if SBS is not enabled.  
For fuel gauge only (not related to protection).  
nDesignVoltage  
nVEmpty  
3.7V  
3.0V  
Under OCV  
Protection  
(SmartEmpty)  
nUVPrtTh.(UVP +  
Programmable under-OCV 40mV steps UVP to UVP+1.28V.  
3.2V  
2.7V  
UOCVP)  
Undervoltage  
Protection  
Programmable undervoltage 20mV steps 2.2V to 3.46V. Gauging  
and communications works until undervoltage shutdown.  
nUVPrtTh.UVP  
Undervoltage  
Release  
Undervoltage fault persists until charger applied.  
Undervoltage  
Shutdown  
Gauging and communications work until undervoltage shutdown.  
nUVPrtTh.UVShdn  
Hardware  
Startup  
Pack voltage  
4.2V minimum  
Zero-Voltage  
Charging  
Enabled by populating ZVC resistor. Charging current set by  
resistor value.  
0.0V  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
SmartEmpty  
Standard undervoltage protection protects the cell voltage from dropping below a certain threshold to protect the battery  
from reaching an overdischarged state. When a lithium-ion/polymer cell stays in undervoltage state for a long time, it is  
important to prevent the lithium-ion/polymer cell from eventually discharging to very deep discharged states like 2.0V or  
even 0V. Staying in a deep-discharge state for a long time can result in a lithium-ion/polymer battery aging faster or going  
into a hazardous state.  
Therefore, the standard objective for lithium-ion/polymer protection when overdischarged is:  
Protect from overdischarge by ensuring some small reserve capacity for long-term-storage survival after  
protection.  
The standard protection is a voltage choice, undervoltage protection (UVP).  
The load on the battery greatly influences the state corresponding with the UVP threshold. When the cell voltage reaches  
the UVP threshold and the protection circuit opens the discharge FET, the cell voltage relaxes to reveal the actual state  
of the battery as shown in Figure 4. When heavy pulsed loads are placed on the cell, the cell voltage may reach the  
undervoltage threshold when there is still ~15% of the battery capacity remaining which results in wasted run-time for the  
application. Additionally, very small loads can allow the battery to be very deeply discharged, potentially damaging the  
cell, before reaching the undervoltage threshold.  
The IC provides SmartEmpty functionality which relies on the fuel gauge's reported state-of-charge to determine empty  
in the application as opposed to using the predefined UVP threshold. SmartEmpty is not influenced by the load and  
opens up the discharge FET when the battery reaches the empty state, as shown in Figure 5. The IC continues to protect  
against higher loads from dropping the cell voltage below the lowered UVP threshold, as shown in Figure 5.  
2C  
(PULSE LOAD)  
OCV = 3.7V  
(~15% CAPACITY REMAINING)  
OCV = 2.8V  
C/24 (LIGHT LOAD)  
(VERY DEEP DISCHARGE - UNDESIRABLE)  
UVP = 2.7V  
TIME  
Figure 4. Standard Undervoltage Protection  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
3C  
(PULSE LOAD)  
2C  
(PULSE LOAD)  
C/24 (LIGHT LOAD)  
UOCVP = 3.2V  
(SMART EMPTY - DESIRABLE)  
UVP = 2.5V  
TIME  
Figure 5. SmartEmpty Protection  
Current Thresholds  
All of the current thresholds of the IC are shown graphically in Figure 3 and in table form with details of each threshold in  
Table 3. The description of each register provides additional guidance for selection of the register value. See Figure 6 for  
timing details on current thresholds.  
Table 3. Current Threshold Summary  
CONFIGURATION  
CURRENT  
ACTION RELEASE  
DETAILS  
REGISTERS  
Overcharge  
Current (fast)  
nODSCTh,  
nODSCCfg  
Threshold 5-bit, 1.25mV steps to 38.75mV.  
Delay programmable 4-bit, 1ms to 15ms in 0.9ms steps.  
CHG off  
Discharging  
or charger  
removal  
detection  
Overcharge  
Current  
(slow with 4  
JEITA zones)  
nIPrtTh1,  
nDelayCfg  
Programmable 0.4mV steps to 51.2mV. Delay programmable  
351ms to 45s. Separate thresholds for 4 out of 6 JEITA zones.  
CHG off  
Overdischarge  
Current (fast)  
nODSCTh,  
nODSCCfg  
5-Bit, 2.5mV steps to 77.5mV.  
Delay programmable 4-bit, 1ms to 15ms in 0.9ms steps.  
DIS off  
Charging or  
Overdischarge  
Current (slow)  
load  
removal  
nIPrtTh1,  
nDelayCfg  
Programmable 0.4mV steps to 51.2mV. Delay programmable  
351ms to 45s.  
DIS off  
detection  
DIS off  
Short-Circuit  
Current  
nODSCTh,  
nODSCCfg  
5-Bit, 5mV steps to 155mV.  
Delay programmable 4-bit, 61μs + 70μs steps to 985μs.  
Charging  
Detected  
See the Charger Presence and Ideal Diode Behavior section for  
details.  
Normal  
See the Charger Presence and Ideal Diode Behavior section for  
more details. When discharging is detected, overcharge current  
faults release. Other charge faults such as OVP, OTP, UTP remain  
set, however, the CHG FET turns on to prevent the heat and voltage  
drop associated with the ~0.6V CHG FET body diode. An OVP fault  
remains remembered (unreleased) until voltage falls and  
discharging is also detected.  
Discharging  
Detected  
Normal  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Overcurrent Protection  
The IC provides three levels of protection for overdischarge current events: fast, medium, and slow as shown in Figure  
6. The IC also provides fast and slow levels of protection for overcharge-current protection. The fast and medium levels  
of protection are provided by hardware comparators and the slow levels are based on the ADC readings.  
The IC maintains the protection until the source of the fault has been removed. Overcharge-protection fault releases  
when discharge is detected. Overdischarge current (fast or slow) or short-circuit current protection faults release when  
PCKP rises above 1V, while the IC applies 30μA source current test to PCKP or when charger is detected. See the  
Charger Presence and Ideal Diode Behavior section for details.  
OVERCHARGE THRESHOLD  
nODSCTH.OCTH (0 - 38.75mV)  
ADC OVERCHARGE THRESHOLD  
nIPRTTH1.OCCP (0 - 51.2mV)  
DEBOUNCE TIME  
ADC OVERDISCHARGE THRESHOLD  
nIPRTTH1.ODCP (0 - 51.2mV)  
OVERDISCHARGE THRESHOLD  
nODSCTH.ODTH (0 - 77.5mV)  
SLOW  
(SECONDS, WITH 1% ACCURACY)  
MEDIUM  
(MILLISECONDS)  
FAST  
(MICROSECONDS)  
SHORT-CIRCUIT THRESHOLD  
nODSCTH.SCTH (0 - 155mV)  
Figure 6. Fast, Medium, and Slow Overcurrent Protection  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Fast Overcurrent Comparators  
The IC contains three fast overcurrent comparators called Overdischarge (OD), Short-Circuit (SC), and Overcharge (OC)  
that allow control protection. These comparators have programmable threshold levels and programmable debounced  
delays. See Figure 7.  
The nODSCTh register sets the threshold levels where each comparator trips. The nODSCCfg register enables each  
comparator and sets their debounce delays. The nODSCCfg register also maintains indicator flags of which comparator  
has been tripped. These register settings are maintained in nonvolatile memory if the nNVCfg1.enODSC bit is set.  
Overcurrent Comparator Diagram  
-
SCDLY  
+
SCTH  
SCi  
+
ODSCCfg  
OCDLY  
OCDLY  
-
OCi  
OCTH  
ODTH  
ODi  
-
+
-
CSN  
CSP  
RSENSE  
Figure 7. Overcurrent Comparator Diagram  
Slow Overcurrent Protection  
The IC provides programmable thresholds for the slow overdischarge-current protection (ODCP) and overcharge-  
current protection (OCCP). ODCP and OCCP can be configured to provide different levels of protection across the six  
temperature zones as shown in Figure 3. ODCP and OCCP are set in nIPrtTh1 and nJeitaC.  
Temperature Thresholds  
The six temperature zones shown in Figure 2 and Figure 3 can be configured in the nTPrtTh1 (Too-hot and Too-cold),  
nTPrtTh2 (Hot and Cold), and nTPrtTh3 (TPermFailHot and Twarm) registers.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Additional Protection Thresholds  
The IC provides additional protection for suspending charge when full charge is detected or when communication with  
a charger has stopped as described in Table 4. The IC can also detect if the CHG FET or DIS FET has failed and alert  
the secondary protector to activate. Some chargers can request the desired charge voltage and charge current from the  
battery. The IC provides a six-zone JEITA charge prescription that can be read by the charger from the ChargeVoltage  
and ChargeCurrent registers.  
Table 4. Additional Protection Thresholds  
THRESHOLD  
ACTION  
CONDITIONS  
FullDet Fault—if enabled (nProtCfg.FullEn) and charge termination criteria (see  
ICHGTerm and charge termination).  
Charge Suspend  
CHG off  
ChgWDT Fault—if enabled (nProtCfg.ChgWDTEn) and communications timeout.  
FullDet Release—Discharge or charger removal detected.  
Charge-Suspend  
Release  
Normal  
ChgWDT Release—Communications or discharge or charger removal detected.  
Activate secondary CHG off yet charge-current continues—if enabled (nProtCfg.PFEn and  
protector nProtCfg.FETPFEn).  
Charge FET Failure  
Activate secondary DIS off yet discharge-current continues—if enabled (nProtCfg.PFEn and  
Discharge FET Failure  
protector  
nProtCfg.FETPFEn).  
Charge Voltage/Current  
Prescription  
Six-zone JEITA (four charge currents and voltages).  
Two steps per JEITA zone.  
Step Charging  
Battery Internal Self-Discharge Detection (ISD)  
A healthy lithium-ion/polymer battery has a very high coulombic-efficiency, typically greater than 99.9% (defined as  
discharge mAh vs. charge mAh). Some portion of the charge capacity can be lost by internal self-discharge. This includes  
natural aging, which is exacerbated if the battery stays at a high temperature and/or high state for long periods of time.  
However, in a damaged battery, additional capacity can be lost (unavailable for discharge), and some portion of this  
reflects permanent capacity loss. Unusual self-discharge in a lithium-ion/polymer battery might indicate health or safety  
problems.  
The MAX17320 internal self-discharge (ISD) detection feature measures battery leakage and provides the following  
functions:  
Leakage Measurement. The LeakCurrRep register outputs the milliampere leakage measured across many days  
and multiple charge termination events.  
• Accurate leakage detection  
• Low ppm false-positive rate at a 3mA threshold  
• Detection during normal use  
• No discharge depth or duration constraints  
• Requires at least four full events, each separated by 20 hours or more  
Leakage Log. Leakage measurements are recorded in the battery-life-logging data. This reveals leakage vs. time for  
any returned battery or for managing deployed packs.  
Leakage Alert. If enabled, when LeakCurrRep exceeds the programmable alert threshold, an LDET alert (see  
ProtAlrt) is asserted.  
Leakage Fault. If enabled, when LeakCurrRep exceeds the programmable fault threshold, the protector disconnects  
the battery.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Example of Internal Self-Discharge Detection  
Figure 8 shows the current leakage the MAX17320 detects as a result of placing a 909Ω resistor across a cell to emulate  
a battery with internal self-discharge over various temperatures.  
Figure 8. Example of Internal Self-Discharge with Temperature Variation  
Configuring ISD  
Contact Maxim for configuring the ISD Feature. See the Battery Internal Self-Discharge Registers section for  
configuration details.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Charger Presence and Ideal Diode Behavior  
During a charge fault, if there is a discharge current, the current flows through the body diode of the CHG FET and  
potentially overheats and damages the FET. To prevent this, the IC turns on the CHG FET when discharging is detected.  
When a charger is detected, the CHG FET turns off again to continue protecting against the charge fault.  
The IC uses several methods to detect charge and discharge to provide the following "Ideal Diode" discharge control  
without forgetting a possible charge fault state such as OVP, OTP, or UTP. Overcharge current is fully released during a  
discharge condition.  
1. Fast CHG FET On. When discharge is detected, the CHG FET quickly turns on regardless of any charge fault  
condition. This limits the heat due to the CHG FET body diode conduction.  
Current < -CurrDet. nProtMiscTh.CurrDet is normally configured to a setting of 2 to provide a clear threshold  
relative to ADC noise. With a 5mΩ sense resistor, this corresponding to 15mA, provides sufficient sensitivity for  
most active loads.  
PCKP < BATT + nOVPCfg.ChgDetTh (PCKP voltage falling only). Additionally, a comparator detects charger  
removal to support better discharging detection even during small standby currents.  
2. Fast CHG FET Off. When discharge to charge transition is detected while a charge fault (such as OTP/OVP/UTP)  
remains latched, the CHG FET quickly turns off to prevent charging. Since the charge fault remains remembered (not  
released by the discharging), the response happens quickly without waiting for the debounce timer.  
3. Slow CHG FET On. The CHG Fet turns on when AvgCurrent < -AvgCurrDet. For default configuration with  
5mΩ, AvgCurrDet is sensitive to 2.8mA discharge. The AvgCurrDet threshold follows the filter configuration  
nFilterCfg.nCurr as well as the hibernate state and configuration according to Table 5 when using default  
nProtMiscTh.CurrDet = 15mA.  
Table 5. AvgCurrDet Threshold When Using 5mΩ and Default nProtMiscTh.CurrDet =  
15mA  
AVGCURRENT FILTER CONFIGURATION (NFILTERCFG.NCURR)  
1 (0.7s)  
8.44mA  
15.0mA  
15.0mA  
2 (1.4s)  
4.68mA  
8.4mA  
3 (2.8s)  
4.68mA  
8.4mA  
4 (5.6s)  
2.82mA  
4.6mA  
8.4mA  
5 (11.25s)  
2.82mA  
4.6mA  
6 (22.5s)  
1.88mA  
2.8mA  
7 (45s)  
1.88mA  
2.8mA  
4.6mA  
8 (90s)  
1.4mA  
1.88mA  
2.8mA  
Active (0.351s)  
Hibernate (1.4s)  
Hibernate (2.8s)  
15.0mA  
15.0mA  
8.4mA  
4.6mA  
4. Slow CHG FET Off. AvgCurrent > AvgCurrDet. If the CHG FET is on for any of the above reasons, the CHG FET  
turns off while the charge fault persists and the average discharge current is less than AvgCurrDet.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Permanent Failure  
The IC supports several types of faults which result in a permanent failure. When any enabled permanent failure is  
detected, both FETs turn off and remain off regardless of power-cycling. When any permanent failure fault is detected,  
the nBattStatus.PermFail bit is set in addition to the specific fault bit (also in nBattStatus), and both FET drivers are put  
in the off state. Furthermore, the PFAIL output drives high to either drive an external fuse or latch a secondary protector.  
This action is useful when FET failure is detected since charge and discharge can not be blocked in any other way.  
The following permanent failure faults are supported whenever permanent failures are enabled (nProtCfg.PFEn = 1) and  
the condition persists longer than the Permanent Fail debounce timer (nDelayCfg.PermFailTimer).  
FET Failures: Enable/disable this feature by configuring nProtCfg.FetPFEn.  
DIS FET Shorted: If discharging is detected during discharge fault, nBattStatus.DFETFs is set and written to NVM.  
CHG FET Shorted: If charging is detected during charge fault, nBattStatus.CFETFs is set and written to NVM.  
FET Open Failure: If either FET is detected open by the detection methods below:  
Detected By Discharge Fail: If DIS = On and V  
< 1.5V and discharge current is not detected,  
PCKP  
nBattStatus.FETFo is set and written to NVM.  
Detected By Charge Fail: If CHG = On and DIS = On and V  
> V  
+ ChgDet and charge current is not  
PCKP  
BATT  
detected, nBattStatus.FETFo is set and written to NVM.  
Severe Overvoltage Failure: If any cell voltage exceeds nOVPrtTh.OVPPermFail, nBattStatus.OVPF is set and  
written to NVM. Disable by configuring nOVPrtTh.OVPPermFail to the maximum value of 5.12V (FF__h).  
Severe Overtemperature Failure: If Temp exceeds nTPrtTh3.TpermFailHot, nBattStatus.OTPF is set and written to  
NVM. Disable by configuring OTPPermFail to the maximum value of 127°C (7F__h).  
Severe Battery Internal Self-Discharge Detection: If enabled to measure internal self-discharge and configured  
to be treated as a severe fault when the leakage current exceeds the fault threshold (see the Battery Internal Self  
Discharge Detection Registers for configuration details), nBattStatus.LDet is set and written to NVM.  
Nonvolatile Protector Checksum Failure: If enabled (nNVCfg1.enProtChkSum), during startup a checksum of  
the protector configuration is calculated and compared against the nChkSum register. If the value mismatches,  
nBattStatus.ChkSumF is set.  
Charge Control  
The IC provides zero-volt charging, prequalification charging and a charging prescription to instruct a charger about how  
to charge the battery pack.  
Zero-Volt Charging  
When in undervoltage-protection, the IC turns both FETs off and then enters a low quiescent state. After a long time in the  
undervoltage state, it is possible for the battery voltage to fall below the minimum 4.2V (pack voltage) operating voltage,  
making it unable to wakeup by communications or pushbutton-wakeup. In this situation, an external charge voltage must  
be applied to PCKP in order to wake up the IC. If enabled, the IC allows a small recovery current to gently recover the  
battery voltage.  
The recovery current is set by the R  
resistor between the PCKP and ZVC pins as shown in Figure 9. Zero-volt charge  
ZVC  
recovery can be disabled by depopulating the resistor. The maximum recovery current is calculated as:  
Maximum Recovery Current = VOLTAGE /(R + R ).  
PACK+ ZVC  
IN  
When the battery is severely depleted and the IC detects that a charger has been connected, the ZVC path is enabled  
and the recovery current begins to flow as shown in Figure 9. The recovery current continues until the IC determines that  
the battery voltage has recovered enough to transfer control to the prequalification or normal charge control at which time  
it disconnects the ZVC path.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
PACK+  
RPCKP  
1kΩ  
CHG  
DIS  
PCKP  
ZERO-VOLT RECOVERY CURRENT PATH  
IN  
ZVC  
RIN  
10Ω  
RZVC  
BATT+  
Figure 9. Zero-Volt Charge Recovery  
Prequal Charging  
The IC provides a prequal charge feature which modulates and reuses the charge NFET to control a limited and  
configurable prequal current when the battery voltage is low. This eliminates the need for a third power FET. See the  
Prequal Configuration for prequal voltage and current settings.  
Charging Prescription  
The IC provides appropriate charging voltage and charging current to safely charge the battery depending on the state of  
the battery and the temperature. The ChargingVoltage and ChargingCurrent registers provide the information according  
to the recommended charging based on knowledge that is installed in the battery. This information can be stored in the  
IC to provide the recommended charging current and voltage. This is useful when a system involves multiple battery  
vendors, swappable batteries, aftermarket batteries, or legacy system support.  
As the temperature of the battery changes significantly above and below room temperature, most cell manufacturers  
recommend charging at reduced current and lower termination voltage to assure safety and improve lifespan. The IC can  
be configured to change its guidance according to TooCold/Cold/Room/Warm/Hot/TooHot programmable temperature  
zones (see nTPrtTh1/2/3). Both charging current and voltage are updated at Cold/Warm/Hot (see nJEITAV and  
nJEITAC). See Figure 2 and Figure 3.  
Additionally, the IC provides a step-charging prescription to improve the lifespan of the battery and charge speed by  
applying a step-charging profile (see the Step Charging section) as shown in Figure 10.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Step Charging  
A step-charging profile sets three charge voltages, three corresponding charge currents, and manages a state-machine  
to transition through the stages as shown in Figure 10.  
FULL VOLTAGE  
TH1 = FULL VOLTAGE – STEPDV1  
TH0 = FULL VOLTAGE – STEPDV0  
90%  
SOC  
50%  
30%  
SOC  
HIGHEST CURRENT,  
LOWEST VOLTAGE  
REDUCED CURRENT UNTIL FULL  
MEDIUM CURRENT  
TIME  
PROTTMRSTAT.CHARGESTEP  
VCELL > TH0  
VCELL > TH1  
STAGE 0  
STAGE 1  
STAGE 2  
NOT CHARGING/DISCHARGING  
NOT CHARGING/DISCHARGING  
Figure 10. Step-Charging State Machine  
This breaks charging into three stages:  
Stage 0: Highest current, lowest voltage. ChargingCurrent comes from nJEITAC until VCell > StepVolt0. After VCell >  
StepVolt0, ChargingCurrent becomes defined by Stage 1.  
Stage 1: Medium current. ChargingCurrent comes from nJEITAC x (StepCurr1 + 1)/16, which is a ratio from 1/16 to 16/  
16 until VCell > StepVolt1. When VCell > StepVolt1, ChargingCurrent becomes defined by Stage 2.  
Stage 2: Reduced current until full. ChargingCurrent comes from nJEITAC x (StepCurr2 + 1)/16, which is a ratio from 1/  
16 to 16/16 until full.  
For example, a charge may start with a ChargingCurrent of 2000mA until the cell voltage reaches 4.12V. At that point,  
the ChargingCurrent is reduced to 1000mA until the cell voltage reaches 4.16V. Then, the ChargingCurrent is further  
reduced to 500mA where it remains until the current begins to taper off naturally to the termination current.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
2
Disabling FETs by Pin-Control or I C Command  
2
The IC provides FET override control by either I C command or pin-command to the ALRT pin. This functionality can be  
useful for various types of applications:  
Factory Testing. Disconnecting the battery is useful for testing with a controlled external power supply.  
Battery Selection. In a multiple battery system, one battery can be disconnected and another connected by operating  
the FETs.  
Ship Mode. The last step in the battery or system factory could be to disable the FETs to disconnect power to the  
system to prevent the battery from draining during shipment, or when the system is in the warehouse or store shelf.  
When allowed by Nonvolatile configuration, both FETs can be turned off by pin control or either FET can be individually  
2
turned off by I C command. The control operates as follows:  
ALRT Pin Override. Set nProtCfg.OvrdEn = 1 and drive ALRT low to force both FETs into the off state. Releasing  
the ALRT line recovers the FETs according to the protector's fault state machine. Alert pin output is not functional in  
this mode.  
2
I C Command Override. Set nProtCfg.CmOvrdEn = 1 and write CommStat.CHGOff or CommStat.DISOff to  
independently disable either the charge or discharge FET. Clearing CHGOff and DISOff recovers the FETs according  
to the protector's fault state machine.  
These features can be disabled and locked by nonvolatile memory to prevent system code from disabling the FETs.  
Although disabling FETs does not produce any safety issue, it can be a nuisance if system-side software denies power  
to the system.  
Fuel Gauge  
ModelGauge m5 Algorithm  
Classical coulomb-counter-based fuel gauges have excellent linearity and short-term performance. However, they suffer  
from drift due to the accumulation of the offset error in the current-sense measurement. Although the offset error is  
often very small, it cannot be eliminated, causes the reported capacity error to increase over time, and requires periodic  
corrections. Corrections are usually performed at full or empty. Some other systems also use the relaxed battery voltage  
to perform corrections. These systems determine the true state-of-charge (SOC) based on the battery voltage after a  
long time of no current flow. Both have the same limitation; if the correction condition is not observed over time in the  
actual application, the error in the system is boundless. The performance of classic coulomb counters is dominated by  
the accuracy of such corrections. Voltage measurement based SOC estimation has accuracy limitations due to imperfect  
cell modeling, but does not accumulate offset error over time.  
The IC includes an advanced voltage fuel gauge (VFG), which estimates OCV, even during current flow, and simulates  
the nonlinear internal dynamics of a Li+ battery to determine the SOC with improved accuracy. The model considers  
the time effects of a battery caused by the chemical reactions and impedance in the battery to determine SOC. This  
SOC estimation does not accumulate offset error over time. The IC performs a smart-empty-compensation algorithm  
that automatically compensates for the effects of temperature and load conditions to provide accurate state-of-charge  
information. The converge-to-empty function eliminates error toward empty state. The IC learns battery capacity over time  
automatically to improve long-term performance. The age information of the battery is available in the output registers.  
The ModelGauge m5 algorithm combines a high-accuracy coulomb counter with a VFG. See Figure 11. The  
complementary combined result eliminates the weaknesses of both the coulomb counter and the VFG while providing  
the strengths of both. A mixing algorithm weighs and combines the VFG capacity with the coulomb counter and weighs  
each result so that both are used optimally to determine the battery state. In this way, the VFG capacity result is used to  
continuously make small adjustments to the battery state, canceling the coulomb-counter drift.  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
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MODELGAUGE  
COULOMB COUNTER  
VERY SLOW  
INFLUENCE  
Δ% SOC  
ΔQ  
MICRO-  
CORRECTIONS  
CAPACITY  
FULL, EMPTY, AND STANDBY  
STATE DETECTION  
UNNECESSARY  
Figure 11. Merger of Coulomb Counter and Voltage-Based Fuel Gauge  
The ModelGauge m5 algorithm uses this battery state information and accounts for temperature, battery current, age,  
and application parameters to determine the remaining capacity available to the system. As the battery approaches the  
critical region near empty, the ModelGauge m5 algorithm invokes a special error correction mechanism that eliminates  
any error.  
The ModelGauge m5 algorithm continually adapts to the cell and application through independent learning routines. As  
the cell ages, its change in capacity is monitored and updated and the voltage-fuel-gauge dynamics adapt based on cell-  
voltage behavior in the application.  
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VOLTAGE  
CURRENT  
TIME  
OCV TABLE  
LOOKUP  
% REMAINING  
OUTPUT  
OCV  
COULOMB  
COUNTER  
mAH OUTPUT  
OCV  
CALCULATION  
OCV OUTPUT  
TEMPERATURE  
COMPENSATION  
LEARN  
RELAXED  
CELL  
DETECTION  
CAPACITY LEARN  
mAh PER PERCENT  
×
EMPTY DETECTION  
MIXING ALGORITHM  
mAH OUTPUT  
MIXCAP REGISTER  
MIXSOC REGISTER  
APPLICATION  
EMPTY  
COMPENSATION  
BASED ON APPLICATION  
TEMPERATURE AND  
DISCHARGE RATE  
EMPTY  
COMPENSATION  
LEARNING  
+
+
-
END-OF-CHARGE  
DETECTION  
APPLICATION  
OUTPUTS:  
CELL CHEMISTRY  
OUTPUTS:  
REPSOC REGISTER  
REPCAP REGISTER  
AVSOC REGISTER  
AVCAP REGISTER  
TTE / AtTTE / TTF REGISTERS  
FULLCAP REGISTER  
VFOCV REGISTER  
CYCLES REGISTER  
FULLCAPNOM REGISTER  
AGE REGISTER  
Figure 12. ModelGauge m5 Block Diagram  
ModelGauge m5 EZ Performance  
ModelGauge m5 EZ performance provides plug-and-play operation of the IC. While the IC can be custom tuned to the  
applications battery through a characterization process for ideal performance, the IC has the ability to provide reasonable  
performance for most applications with no custom characterization required.  
While EZ performance provides reasonable performance for most cell types, some chemistries such as lithium-iron-  
phosphate (LiFePO ) and Panasonic NCR/NCA series cells require custom characterization for best performance. EZ  
4
performance provides models for applications with empty voltages ranging from 3.0V to 3.4V through the EV kit GUI  
Configuration Wizard. Contact Maxim for details of the custom characterization procedure.  
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OCV Estimation and Coulomb Count Mixing  
The core of the ModelGauge m5 algorithm is a mixing algorithm that combines the OCV state estimation with the coulomb  
counter. After power-on reset of the IC, coulomb-count accuracy is unknown. The OCV state estimation is weighted  
heavily compared to the coulomb count output. As the cell progresses through cycles in the application, coulomb-counter  
accuracy improves and the mixing algorithm alters the weighting so that the coulomb-counter result is dominant. From  
this point forward, the IC switches to servo mixing. Servo mixing provides a fixed magnitude continuous error correction to  
the coulomb count, up or down, based on the direction of error from the OCV estimation. This allows differences between  
the coulomb count and OCV estimation to be corrected quickly. See [[Voltage and Coulomb Count Mixing]].  
The resulting output from the mixing algorithm does not suffer accumulation drift from current measurement offset  
error and is more stable than a stand-alone OCV estimation algorithm. See Figure 13. Initial accuracy depends on the  
relaxation state of the cell. The highest initial accuracy is achieved with a fully relaxed cell.  
MAXIMUM COULOMB COUNTER ERROR  
(±0.1% PER HOUR IN THIS EXAMPLE)  
TYPICAL OCV ESTIMATION  
ERROR AS CELL IS CYCLED  
(SHADED AREA)  
MODELGAUGE OCV + COULOMB COUNT  
MIXING MAXIMUM ERROR RANGE  
TIME  
Figure 13. ModelGauge m5 Typical Accuracy Example  
Empty Compensation  
As the temperature and discharge rate of an application changes, the amount of charge available to the application also  
changes. The ModelGauge m5 algorithm distinguishes between the remaining capacity of the cell, remaining capacity of  
the application, and reports both results to the user.  
The MixCap output register tracks the charge state of the cell. This is the theoretical mAh of charge that can be removed  
from the cell under ideal conditions—extremely low discharge current and independent of cell voltage. This result is not  
affected by application conditions such as cell impedance or minimum operating voltage of the application. ModelGauge  
m5 continually tracks the expected empty point of the application in mAh. This is the amount of charge that cannot be  
removed from the cell by the application because of the minimum voltage requirements and internal losses of the cell.  
The IC subtracts the amount of charge not available to the application from the MixCap register and reports the result in  
the AvCap register.  
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Since the available remaining capacity is highly dependent on the discharge rate, the AvCap register can be subject to  
large instantaneous changes as the application load current changes. The result can increase, even while discharging if  
the load current suddenly drops. This result, although correct, can be very counter-intuitive to the host software or end-  
user. The RepCap output register contains a filtered version of AvCap that removes any abrupt changes in remaining  
capacity. RepCap converges with AvCap over time to correctly predict the application empty point while discharging or  
the application full point while charging. Figure 14 shows the relationship of these registers.  
LOAD INCREASES  
MIXCAP REGISTER  
ABSOLUTE mAh STATE-OF-BATTERY NOT  
CONSIDERING TEMPERATURE AND DISCHARGE  
RATE  
(I.E., CAPACITY AVAILABLE IF VERY LIGHT LOAD)  
INCREASE IN AVAILABLE CAPACITY WHEN  
AVCAP REGISTER  
AVAILABLE CAPACITY OF THE  
CELL UNDER PRESENT  
UNDER LOAD IS COUNTERINTUITIVE TO  
USERS AND OPERATING SYSTEMS  
CONDITIONS  
REPCAP REGISTER  
REPORTED CAPCITY WITH NO SUDDENT  
JUMPS AND CORRECT FORECAST OF  
EMPTY  
EMPTY  
TIME (h)  
Figure 14. Handling Changes in Empty Calculation  
End-of-Charge Detection  
The IC detects the end of a charge cycle when the application current falls into the band set by the IChgTerm register  
value while the VFSOC value is above the FullSOCThr register value. By monitoring both the Current and AvgCurrent  
registers, the device can reject false end-of-charge events such as application load spikes or early charge-source  
removal. See the End-of-Charge Detection graph in the Typical Operating Characteristics and Figure 15. When a proper  
end-of-charge event is detected, the device learns a new FullCapRep register value based on the RepCap register  
output. If the old FullCapRep value was too high, it is adjusted on a downward slope near the end-of-charge as defined  
by the MiscCfg.FUS setting until it reaches RepCap. If the old FullCapRep was too low, it is adjusted upward to match  
RepCap. This prevents the calculated state-of-charge from ever reporting a value greater than 100%. See Figure 16.  
Charge termination is detected by the IC when the following conditions are met:  
• VFSOC register > FullSOCThr register  
• AND IChgTerm x 0.125 < Current register < IChgTerm x 1.25  
• AND IChgTerm x 0.125 < AvgCurrent register < IChgTerm x 1.25  
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AVGCURRENT  
CURRENT  
1.25 x ICHGTERM  
0.125 x ICHGTERM  
0mA  
HIGH CURRENT LOAD SPIKES DO NOT GENERATE  
END-OF-CHARGE DETECTION BECAUSE CURRENT  
AND AVERAGE CURRENT READINGS DO NOT FALL  
INTO THE DETECTION AREA AT THE SAME TIME.  
AVGCURRENT  
CURRENT  
1.25 x ICHGTERM  
0.125 x ICHGTERM  
0mA  
EARLY CHARGER REMOVAL DOES NOT GENERATE  
END-OF-CHARGE DETECTION BECAUSE CURRENT  
AND AVERAGE CURRENT READINGS DO NOT FALL  
INTO THE DETECTION AREA AT THE SAME TIME.  
Figure 15. False End-of-Charge Events  
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AVGCURRENT  
CURRENT  
1.25 x ICHGTERM  
0.125 x ICHGTERM  
0mA  
CORRECT  
END-OF-CHARGE  
DETECTION AREA  
CASE 1: OLD FULLCAPREP TOO HIGH  
NEW FULLCAPREP  
CASE 2: OLD FULLCAPREP TOO LOW  
REPCAP  
Figure 16. FullCapRep Learning at End-of-Charge  
Fuel Gauge Learning  
The IC periodically makes internal adjustments to cell characterization and application information to remove initial error  
and maintain accuracy as the cell ages. These adjustments always occur as small under-corrections to prevent instability  
of the system and prevent any noticeable jumps in the fuel-gauge outputs. Learning occurs automatically without any  
input from the host. In addition to estimating the battery’s state-of-charge, the IC observes the battery’s relaxation  
response and adjusts the dynamics of the voltage fuel gauge. Registers used by the algorithm include:  
Application Capacity (FullCapRep Register). This is the total capacity available to the application at full, set through  
the IChgTerm and FullSOCThr registers as described in the End-of-Charge Detection section. See the FullCapRep  
register description.  
Cell Capacity (FullCapNom Register). This is the total cell capacity at full, according to the voltage fuel gauge. This  
includes some capacity that is not available to the application at high loads and/or low temperatures. The IC periodically  
compares percent change based on an open circuit voltage measurement vs. coulomb-count change as the cell charges  
and discharges, maintaining an accurate estimation of the pack capacity in mAh as the pack ages. See Figure 17.  
Voltage Fuel-Gauge Adaptation. The IC observes the battery’s relaxation response and adjusts the dynamics of the  
voltage fuel gauge. This adaptation adjusts the RComp0 register during qualified cell relaxation events.  
Empty Compensation. The IC updates internal data whenever cell empty is detected (VCell < VEmpty) to account for  
cell age or other cell deviations from the characterization information.  
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RELAXATION EVENTS  
100%  
90%  
80%  
70%  
60%  
50%  
40%  
30%  
20%  
10%  
D%4  
D%1  
D%5  
OBSERVED SIZE OF BATTERY:  
D%2  
DQACC  
FULLCAPNOM =  
x 100%  
DPACC  
WHERE:  
D%3  
0%  
DQACC=|DQ1|+|DQ2| +|DQ3| ...  
DPACC=|D%1|+|D%2| +|D%3| ...  
DQ4  
1200mAh  
1100mAh  
1000mAh  
900mAh  
DQ1  
DQ5  
800mAh  
700mAh  
600mAh  
500mAh  
400mAh  
300mAh  
200mAh  
100mAh  
DQ2  
DQ3  
0mAh  
Figure 17. FullCapNom Learning  
Converge-To-Empty  
The IC includes a feature that guarantees the fuel gauge output converges to 0% as the cell voltage approaches the  
empty voltage. As the cell's voltage approaches the expected empty voltage (AvgVCell approaches VEmpty) the IC  
smoothly adjusts the rate of change of RepSOC so that the fuel gauge reports 0% at the exact time the cell's voltage  
reaches empty. This prevents minor over or under-shoots in the fuel gauge output. See Figure 18.  
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VEMPTY  
REPSOC  
ESTIMATION TOO HIGH  
REPSOC RATE-OF-  
IDEAL  
CHANGE ADJUSTED SO  
REPSOC  
THAT IT REACHES 0%  
AS THE CELL’S  
VOLTAGE REACHES  
VEMPTY  
REPSOC  
ESTIMATION TOO LOW  
0%  
Figure 18. Converge-to-Empty  
Determining Fuel-Gauge Accuracy  
To determine the true accuracy of a fuel gauge, as experienced by end-users, the battery should be exercised in a  
dynamic manner. The end-user accuracy cannot be understood with only simple cycles. To challenge a correction-  
based fuel gauge, such as a coulomb counter, test the battery with partial loading sessions. For example, a typical user  
may operate the device for 10 minutes and then stop use for an hour or more. A robust test method includes these  
kinds of sessions many times at various loads, temperatures, and duration. Refer to the Application Note 4799: Cell  
Characterization Procedure for a ModelGauge m3/ModelGauge m5 Fuel Gauge.  
Initial Accuracy  
The IC uses the first voltage reading after power-up or after cell is connected to the IC to determine the starting output of  
the fuel gauge. It is assumed that the cell is fully relaxed prior to this reading; however, this is not always the case. If there  
is a load or charge current at this time, the initial reading is compensated using the characterized internal impedance of  
the cell to estimate the cell's relaxed voltage. If the cell was recently charged or discharged, the voltage measured by the  
IC may not represent the true state-of-charge of the cell, resulting in initial error in the fuel gauge outputs. In most cases,  
this error is minor and is quickly removed by the fuel-gauge algorithm during the first hour of normal operation.  
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Cycle+ Age Forecasting  
A special feature of the ModelGauge m5 algorithm is the ability to forecast the number of cycles a user is able to get out  
of the cell during its lifetime. This allows an application to adjust a cell's charge profile over time to meet the cycle life  
requirements of the cell. See Figure 19. The algorithm monitors the change in cell capacity over time and calculates the  
number of cycles it takes for the cell’s capacity to drop to a predefined threshold of 85% of the original. Remaining cycles  
below 85% of the original capacity are unpredictable and not managed by age forecasting.  
INITIAL DATA  
CHARGE PROFILE  
100%  
CHANGED  
ADDITIONAL DATA  
NEW AGE FORECAST SHOWS  
THAT APPLICATION  
REQUIREMENTS SHOULD BE MET  
INITIAL AGE FORECAST  
SHOWS THAT APPLICATION  
REQUIREMENTS MAY NOT  
BE MET  
MINIMUM CELL CAPACITY  
REQUIRED BY THE  
APPLICATION  
CYCLES  
Figure 19. Benefits of Age Forecasting  
nAgeFcCfg Register (1E2h)  
Register Type: Special  
Nonvolatile Restore: There is no associated restore location for this register.  
The nAgeFcCfg register is used to configure the age forecasting functionality. Register data is nonvolatile and is typically  
configured only once during pack assembly. Table 6 shows the register format.  
Table 6. nAgeFcCfg Register (1E2h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
DeadTargetRatio  
CycleStart  
0
0
0
1
1
DeadTargetRatio: Sets the remaining percentage of initial cell capacity where the cell is considered fully aged.  
DeadTargetRatio can be adjusted between 75% and 86.72% with an LSb of 0.7813%. For example, if age forecasting  
was configured to estimate the number of cycles until the cell’s capacity dropped to 85.1574% of when it was new,  
DeadTargetRatio should be programmed to 1101b.  
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CycleStart: Sets the number of cell cycles before age forecasting calculations begin. CycleStart has a range of 0.00  
to 81.92 cycles with an LSb of 0.64 cycles. Since age forecasting estimation becomes more accurate over time, most  
applications use a default value of 30 cycles.  
0: Always write this location 0.  
1: Always write this location 1.  
AgeForecast Register (0B9h)  
Register Type: Special  
Nonvolatile Backup: None  
The AgeForecast register displays the estimated cycle life of the application cell. The AgeForecast value should be  
compared against the Cycles (017h) register to determine the estimated number of remaining cell cycles. This is  
accomplished by accumulating the capacity loss per cycle as the cell ages. The result becomes more accurate with each  
cycle measured. The AgeForecast register has a full range of 0 cycles to 16383 cycles with a 25% LSb. This register is  
recalculated from learned information at power-up.  
Age Forecasting Requirements  
There are several requirements for proper operation of the age forecasting feature as follows:  
1. There is a minimum and maximum cell size that the age forecasting algorithm can handle. Table 7 shows the allowable  
range of cell sizes that can be accurately age forecasted depending on the size of the sense resistor used in the  
application. Note this range is different from the current and capacity measurement range for a given sense resistor. See  
the Current Measurement section for details.  
2. Age forecasting requires a minimum of 100 cycles before achieving reasonable predictions. Ignore the age forecasting  
output until then.  
3. Age forecasting requires a custom characterized battery model to be used by the IC. Age forecasting is not valid when  
using the default model.  
Table 7. Minimum and Maximum Cell Sizes for Age Forecasting  
SENSE RESISTOR  
(Ω)  
MINIMUM CELL SIZE FOR FORECASTING  
(mAH)  
MAXIMUM CELL SIZE FOR FORECASTING  
(mAH)  
0.005  
0.010  
0.020  
1600  
800  
5000  
2500  
1250  
400  
Enabling Age Forecasting  
The following steps are required to enable the age forecasting feature:  
1. Set nNVCfg2.enVT = 0. This function conflicts with age forecasting and must be disabled.  
2. Set nFullCapFlt to the value of nFullCapNom.  
3. Set nVoltTemp to 0001h.  
4. Set nNVCfg0.enAF = 1 to begin operation.  
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Battery Life Logging  
The IC has the ability to log learned battery information providing the host with a history of conditions experienced by the  
cell pack over its lifetime. The IC can store up to 100 snapshots of page 1Ah in nonvolatile memory. Individual registers  
from page 1Ah are summarized in Table 8. Their nonvolatile backup must be enabled in order for logging to occur. See  
each register's detailed description in other sections of this data sheet. The logging rate follows the "Fibonacci Saving"  
interval to provide recurring log-saving according to the expected battery lifespan and is configured as shown in Table  
96. See the 100 Record Life Logging section for more details.  
Table 8. Life Logging Register Summary  
REGISTER  
ADDRESS  
REGISTER  
NAME  
FUNCTION  
1A0h  
1A1h  
1A2h  
1A3h  
1A4h  
1A5h  
1A6h  
1A7h  
1A8h  
1A9h  
nQRTable00  
nQRTable10  
nQRTable20  
nQRTable30  
nCycles  
Learned characterization information used to determine when the cell pack is empty under  
application conditions.  
Total number of equivalent full cycles seen by the cell since assembly.  
nFullCapNom Calculated capacity of the cell independent of application conditions.  
nRComp0  
Learned characterization information related to the voltage fuel gauge.  
nTempCo  
nBattStatus  
Contains the permanent battery status information and, if enabled, the leakage current.  
nFullCapRep Calculated capacity of the cell under present application conditions.  
The average voltage and temperature seen by the IC at the instance of learned data backup. If Age  
Forecasting is enabled, this register contains different information.  
1AAh  
nVoltTemp  
1ABh  
1ACh  
1ADh  
nMaxMinCurr  
Maximum and minimum current, voltage, and temperature seen by the IC during this logging  
nMaxMinVolt  
window.  
nMaxMinTemp  
If Fault Logging is enabled, this register indicates which protection events happened during each  
1AEh  
1AFh  
nFaultLog  
nTimerH  
history log period. If Age Forecasting is enabled, this register contains a highly filtered  
nFullCapNom.  
Total elapsed time since cell pack assembly not including time spent in shutdown mode.  
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Life Logging Data Example  
Figure 20 shows a graphical representation of sample history data read from an IC. Analysis of this data can provide  
information about cell performance over its lifetime as well as to detect any application anomalies that may have affected  
performance.  
6m  
TIME VS. CYCLES AND MAXIMUM / MINIUMUM  
VOLTAGE GIVES AN INDICATION OF THE USAGE PROFILE  
0
4.2V  
3.0V  
85C  
-40C  
2.0A  
MAXIMUM / MINUMUM TEMPERATURE AND CURRENT  
CAN INDICATE IF THE CELL HAS BEEN ABUSED  
-5.0A  
100%  
FULLCAPNOM  
FULLCAPREP  
QRESIDUAL  
0%  
CYCLES  
Figure 20. Sample Life Logging Data  
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Determining Number of Valid Logging Entries  
While logging data, the IC begins on history page 1 and continues until all history memory has been used at page 100.  
Prior to reading history information out of the IC, the host must determine which history pages has been written and  
which, if any, had write errors and should be ignored. Each page of history information has two associated write flags  
that indicate if the page has been written and two associated valid flags which indicate if the write was successful. The  
HISTORY RECALL command [E2XXh] is used to load the history flags into page 1Fh of IC memory where the host can  
then read their state. Table 9 shows which command and which page 1Fh address has the flag information for a given  
history page. For example, to see the write flag information of history pages 1-8, send the E29Ch command then read  
address 1F2h. To see the valid flag information of pages 1-8, send the E29Ch command and then read address 1FFh.  
Table 9. Reading History Page Flags  
ASSOCIATED  
HISTORY PAGES  
COMMAND TO RECALL  
WRITE FLAGS  
WRITE FLAG  
ADDRESS  
COMMAND TO RECALL  
VALID FLAGS  
VALID FLAG  
ADDRESS  
1-8  
1F2h  
1F3h  
1F4h  
1F5h  
1F6h  
1F7h  
1F8h  
1F9h  
1FAh  
1FBh  
1FCh  
1FDh  
1FEh  
E29Ch  
1FFh  
1F0h  
1F1h  
1F2h  
1F3h  
1F4h  
1F5h  
1F6h  
1F7h  
1F8h  
1F9h  
1FAh  
1FBh  
9-16  
17-24  
25-32  
33-40  
41-48  
49-56  
57-64  
65-72  
73-80  
81-88  
89-96  
97-100  
E29Ch  
E29Dh  
Once the write flag and valid flag information are read from the IC, it must be decoded. Each register holds two flags for  
a given history page. Figure 21 shows the register format. The flags for a given history page are always spaced 8-bits  
apart from one another. For example, history page 1 flags are always located at bit positions D0 and D8, history page 84  
flags are at locations D3 and D11, etc. Note that the last flag register contains information for only 3 pages, in this case,  
the upper 5-bits of each byte should be ignored.  
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HISTORY PAGE N  
HISTORY PAGE N  
WRITE INDICATOR 2  
WRITE INDICATOR 1  
HISTORY PAGE N+7  
WRITE INDICATOR 2  
HISTORY PAGE N+1  
WRITE INDICATOR 2  
HISTORY PAGE N+7  
WRITE INDICATOR 1  
HISTORY PAGE N+1  
WRITE INDICATOR 1  
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0  
WRITE FLAG REGISTER FORMAT  
HISTORY PAGE N  
HISTORY PAGE N  
VALID INDICATOR 2  
VALID INDICATOR 1  
HISTORY PAGE N+7  
VALID INDICATOR 2  
HISTORY PAGE N+1  
VALID INDICATOR 2  
HISTORY PAGE N+7  
VALID INDICATOR 1  
HISTORY PAGE N+1  
VALID INDICATOR 1  
D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0  
VALID FLAG REGISTER FORMAT  
Figure 21. Write Flag Register and Valid Flag Register Formats  
Once all four flags for a given history page are known, the host can determine if the history page contains valid data. If  
either write flag is set then data has been written to that page by the IC. If both write flags are clear, the page has not yet  
been written. Due to application conditions, the write may not have been successful. Next check the valid flags. If either  
valid flag is set, the data should be considered good. If both valid flags are clear then the data should be considered bad  
and the host should ignore it. Table 10 shows how to decode the flags.  
Table 10. Decoding History Page Flags  
WRITE INDICATOR  
1
WRITE INDICATOR  
2
VALID INDICATOR  
1
VALID INDICATOR  
2
PAGE STATUS  
Page empty.  
0
1
0
X
0
X
0
Write failure. Page has invalid  
data.  
X
1
X
1
Write success. Page has valid  
data.  
X
Write failure. Page has invalid  
data.  
0
0
X
1
1
X
1
Write success. Page has valid  
data.  
X
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Reading History Data  
Once all pages of valid history data have been identified, they can be read from the IC using the HISTORY RECALL  
command. Table 11 shows the command and history page relationship. After sending the command, wait t , then  
RECALL  
read the history data from IC page 1Fh. Each page of history data has the same format as page 1Ah. For example,  
nCycles is found at address 1A4h and nCycles history are at 1F4h, nTimerH is located at address 1AFh and nTimerH  
history is located at address 1FFh, etc.  
Table 11. Reading History Data  
COMMAND  
E22Eh  
E22Fh  
...  
HISTORY PAGE RECALLED TO PAGE 1EH  
Page 1  
Page 2  
...  
E291h  
Page 100  
History Data Reading Example  
The host would like to read the life-logging data from a given IC. The host must first determine how many history pages  
have been written and if there are any errors. To start checking history page 1, the host sends E29Ch to the command  
register, wait t  
, then read location 1F2h. If either the D0 or the D8 bit in the read data word is a logic 1, the host  
RECALL  
knows that history page 1 contains history data. The host can then check page 2 (bits D1 and D9) up to page 7 (bits D7  
and D15). The host continues on to pages 8 to 16 by reading location 1F3h and then repeating individual bit testing. This  
process is repeated for each command and address listed in Table 9 until the host finds a history page where both write  
flags read logic 0. This is the first unwritten page. All previous pages contain data, all following pages are empty.  
The host must now determine which, if any, of the history pages have bad data and must be ignored. The above process  
is repeated for every location looking at the valid flags instead of the write flags. Any history page where both valid flags  
read logic 0 is considered bad due to a write failure and that page should be ignored. Once the host has a complete list  
of valid written history pages, commands E22Eh to E291h can be used to read the history information from page 1Fh for  
processing.  
Note that this example was simplified in order to describe the procedure. A more efficient method would be for the host  
to send a history command once and then read all associated registers. For example, the host could send the E29Ch  
command once and then read the entire memory space of 1F0h to 1FFh which would contain all write flags for pages 1  
to 100 (1F2h to 1FEh) and all valid flags for pages 1 to 8 (1FFh). This applies for all E2XXh history commands.  
See Appendix A: Reading History Data Pseudo-Code Example section for a psuedo-code example of reading history  
data.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Analog Measurements  
The IC monitors individual cell and pack voltages, current, and temperatures as shown in Table 12. This information is  
used to protect the battery pack, provided to the fuel gauge algorithm to predict cell capacity and also made available to  
the user. See the Analog Measurement Registers section for more details.  
Table 12. Analog Measurement Registers  
REGISTER NAME  
ADDRESS  
PURPOSE/CONTENTS  
Voltage  
Registers  
VCell  
01Ah  
Lowest cell voltage  
Cell1, Cell2,  
Cell3, Cell4  
0D8h,0D7h,  
0D6h,0D5h  
Direct cell measurements of selected number of cells  
The Batt registers contains the total pack voltage measured inside the  
protector and PCKP register contains the voltage between PACK+ and  
GND  
0DAh,  
0DBh  
Batt, PCKP  
AvgVCell  
019h  
Average VCell  
0D4h,  
0D3h,  
0D2h, 0D1h  
AvgCell1, AvgCell2,  
AvgCell3, AvgCell4  
Average of voltages  
Temperature  
Registers  
The highest thermistor temperature if enabled, and the die-temperature if  
the thermistors are disabled  
Temp  
01Bh  
13Ah,  
139h,  
138h, 137h  
Temp1, Temp2,  
Temp3, Temp4  
Individual temperature measurements from the enabled thermistors and  
internal die temperature  
DieTemp  
034h  
AvgTA,  
016h,  
AvgTemp1,  
AvgTemp2,  
AvgTemp3, AvgTemp4  
136h, 135h,  
134h, 133h  
Average of temperatures  
040h  
AvgDieTemp  
Current  
Current  
Registers  
01Ch  
01Dh  
Battery current  
Average current  
AvgCurrent  
Other  
Power, AvgPower  
0B1h, 0B3h Power  
0BEh,  
TimerH, Timer  
nTimerH  
32-bit 23.9 year timer  
03Eh  
23.9 year nonvolatile timer  
1AFh  
QH, QL  
04Dh, 04Eh 32-bit coulomb counter  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Cell Balancing  
If cells are imbalanced, then one cell might reach full or empty earlier than others, limiting the maximum capacity of the  
pack. The IC balances the cells using internal MOSFETs. While charging, if the IC detects that the voltage of a cell or  
cells is higher than the average voltage of the cell pack as determined by nBalTh.BALCFG setting, the IC enables an  
internal FET to shunt current away from the corresponding cell. The small difference in charging current balances all cells  
in the pack over time.  
Cell Balancing Window of Operation  
Cell balancing occurs when cell balancing is enabled and there is a voltage mismatch between the maximum and  
minimum cell voltages greater than the balancing threshold and if either of the following conditions are met:  
● The AvgCurrent register value must be above nProtMiscTh.CurrDet, which indicates the battery is charging.  
● The Voltage Fuelgauge State of Charge (VFSOC) register value must be larger than the FullSOCThr register value  
indicating the pack is nearly full.  
Cell balancing continues after the charge has stopped and even into discharge as long as VFSOC remains above  
FullSOCThr. This can extend the balancing opportunity beyond the typical charging window. Figure 22 shows the  
opportunity of when cell balancing may occur.  
CAREFUL BALANCING BY THE IC EXTENDS OPPORTUNITY  
TIME BEYOND THE TYPICAL CHARGING WINDOW  
BALANCING CONTINUES BEYOND CHARGE-STOP  
AND INTO DISCHARGE UNTIL VFSOC < FULLSOCTHR  
BALANCING  
BLOCKED  
UNTIL  
CHARGING  
CHARGING  
0mA  
DISCHARGING  
END-OF-CHARGE  
START-OF-LOAD  
Figure 22. Cell Balancing Window of Operation  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Cell Balancing Order and Thresholds  
As soon as the cell balancing window is entered the maximum and minimum average cell voltages are calculated. If the  
difference from max to min is more than the threshold defined by the nBalTh.BALCFG and nBalTh.RMismatch settings,  
the corresponding internal balancing switch is enabled to reduce charging current flowing through the cell with the highest  
voltage. Table 13 shows all balancing threshold levels determined by BALCFG. The recommended balancing threshold  
is 011b or 10.0mV.  
Table 13. Cell Balancing Thresholds  
BALCFG VALUE  
BALANCING THRESHOLD  
000b  
Balancing Disabled (Factory Default)  
001b  
2.5mV  
5.0mV  
010b  
011b  
10.0mV  
20.0mV  
40.0mV  
80.0mV  
160.0mV  
100b  
101b  
110b  
111b  
RMismatch  
The IC determines when there is a voltage mismatch by comparing the maximum and minimum cell voltages.  
VOLTAGE = MaxCellVoltage - MinCellVoltage  
MISMATCH  
In order for balancing to occur, the voltage mismatch must be greater than a configurable threshold.  
nBalTh.BalCfg  
VOLTAGE  
> 1.25mV x 2  
+ |AverageCurrent| x Rmismatch  
MISMATCH  
Rmismatch is used for balancing to tolerate resistance mismatch between cells, which normally is larger at low states  
of charge, and exclude balancing during higher current. Rmismatch should be selected in mΩ approximately 20% of  
nominal battery resistance. Default recommendation is nBalTh.Rmismatch = 3 corresponding with 11.7mΩ.  
Cell Balancing Circuits  
Figure 23 shows the equivalent balancing circuits for 2S-, 3S-, and 4S-cell packs. Internal cell-balancing FETs allow  
current to be drawn from an individual cell in the pack during charge. To limit current during cell balancing, an external  
resistor must be added in series with the CELL1, CELL2, CELL3 and BATTS pins. If these resistors are not installed,  
power in excess of the IC package maximum rating could be drawn leading to failure.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
RBAL4  
BATTS  
MAX17320  
0.1µF  
9Ω  
RBAL3  
CELL3  
0.1µF  
9Ω  
RBAL2  
CELL2  
0.1µF  
9Ω  
RBAL1  
CELL1  
0.1µF  
9Ω  
GND  
CSP  
CSN  
RSENSE  
Figure 23. Cell Balancing Configuration  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Cell Balancing Current  
External series resistors on the CELL1, CELL2, CELL3 and BATTS pins are required to limit the current flow when  
balancing. The value of these resistors should be selected to prevent exceeding 100mA, the maximum rated current for  
these pins. The balancing currents can be calculated as follows. Remember to size these resistors to handle the power  
dissipated by balancing.  
CELL1:  
IBAL  
= V  
/ (R  
+ R  
SWITCH  
)
MAX  
CELLMAX  
BAL  
CELL2, CELL3, BATTS:  
Where:  
IBAL  
= V  
/ (2 x R  
+ R  
)
SWITCH  
MAX  
CELLMAX  
BAL  
R
is 9Ω typical  
SWITCH  
V
is the maximum cell voltage during charging  
CELLMAX  
R
is the external series resistor to limit current  
BAL  
Cell Balancing Duty Cycle  
The IC temporarily interrupts cell balancing to prevent interference with voltage and current measurements. Balancing is  
disabled 45ms minimum prior to making a measurement to allow for settling of the external filter on the pin. This pause  
occurs once every task period and has minimal impact on the average balancing current as shown in Figure 24.  
45ms TYPICAL  
SETTLING TIME  
AND ADC  
MEASUREMENTS  
BALANCING  
ACTIVE  
BALANCING  
ACTIVE  
351ms TYPICAL  
Figure 24. Cell Balancing Duty Cycle  
Internal Self-Discharge Detection Interaction with Cell Balancing  
Cell balancing is compatible with the IC's internal self-discharge detection function without any special user  
considerations. The internal self-discharge algorithm uses the coulomb counter, which corresponds to the state of the  
lowest state cell, so it is immune from the balancing of the cells with higher voltages.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Backup and Always-On LDO  
The IC provides a configurable always-on LDO (1.8V or 3.4V) that can power small critical loads (less than 2mA). The  
always-on LDO remains on during undervoltage protection events and permanent failure events as well as remains on  
when the IC is in ship mode. To conserve power in deepship mode, the LDO is turned off.  
Applications:  
● Real-Time Clock  
● Replace any coin cell  
● Always-on security/tamper detection  
● Payment terminals/mobile point-of-sale  
The host can turn on/off the LDO as well as change the output voltage between 1.8V and 3.4V by writing the nPackCfg  
register if the memory location is unlocked and the write protection is disabled.  
SHA-256 Authentication  
The IC supports authentication which is performed using a FIPS 180-4 compliant SHA-256 one-way hash algorithm on  
a 512-bit message block. The message block consists of a 160-bit secret, a 160-bit challenge, and 192 bits of constant  
data. Optionally, the 64-bit ROM ID replaces 64 of the 192 bits of constant data used in the hash operation. Contact  
Maxim for details of the message block organization.  
The host and the IC both calculate the result based on the mutually known secret. The result of the hash operation is  
known as the message authentication code (MAC) or message digest. The MAC is returned by the IC for comparison  
to the host’s MAC. Note that the secret is never transmitted on the bus and thus cannot be captured by observing bus  
traffic. Each authentication attempt is initiated by the host system by writing a 160-bit random challenge into the SHA  
memory address space 0C0h to 0C9h. The host then issues the compute MAC or compute MAC with ROM ID command.  
The MAC is computed per FIPS 180-4 and stored in address space 0C0h to 0CFh overwriting the challenge value.  
The IC introduces the new MAC key derivation function (MKDF), a 2-stage authentication scheme that utilizes an  
intermediate secret for an added layer of security.  
See the SHA-256 Authentication Procedures section for details of all of the SHA-256 procedures.  
Note that the results of the authentication attempt are determined by host verification. The operation of the IC is not  
affected by authentication success or failure.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Wake-Up/Shutdown  
Modes of Operation  
The MAX17320 supports five power modes (two active modes and three shutdown modes) as shown in Table 14 with  
descriptions of the features available, the typical current consumption, and the method to enter and exit each mode.  
Table 14. Modes of Operation  
CONSUMPTION  
MODE  
DESCRIPTION  
(TYPICAL)  
38μA  
Full functionality. The protection FETs, charge pump, and ADC are on. Firmware tasks execute  
every 351ms.  
Full Active  
ADC is on. The FETs and charge pump are disabled due to a protection event, disconnecting  
the battery from the system. RAM is preserved and the gauge continues to monitor the battery  
until the fault is removed. Firmware remains awake and ready to communicate. Firmware tasks  
execute every 1.4s.  
Protect  
16μA  
Similar state as "Protect" except the firmware is responsive to wake-up events such as charger  
connection, communications wake-up, or pushbutton wake-up (depending on which wake-ups  
are enabled by configuration). Firmware tasks execute every 1.4s.  
Ship*  
16μA  
2.2μA  
2.2μA  
FETs, charge pumps, ADC, and firmware are all placed into a shutdown state. The only activity  
alive relates to analog circuits that monitor for wake-up conditions (charger detection,  
communications, or pushbutton, depending on which are enabled).  
DeepShip*  
FETs, charge pumps, ADC, firmware, and most wake-up circuits are powered down. Only the  
charger-detection wake-up circuit remains powered in this mode to best conserve the small  
remaining battery capacity and prevent deep discharge.  
Undervoltage  
Shutdown  
2
2
*On the I C shutdown command or when the I C SCL/SDA lines collapse (and depending on whether COMMSH is  
enabled), the MAX17320 either enters Ship (if nProtCfg.DeepShpEn = 0) or DeepShip (if nProtCfg.DeepShpEn = 1).  
The MAX17320 can be awoken with a variety of methods depending on the configuration. If pushbutton wake-up  
is enabled (nConfig.PBen = 1), then consistently pulling the ALRT/PIO pin low, either by pushbutton or system  
configuration, wakes up the device. A high-to-low transition on any of the communication lines wakes up the device. A  
consistent connection to a charger wakes up the device.  
The MAX17320 prevents accidental wake-up when the system is boxed and shipped. When awoken by any source, it  
debounces all wake-up sources (button, communications, and charger detection) to ensure that the wake-up is valid. If  
no valid wake-up is discovered, the device returns to Ship or DeepShip.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Power Mode Transition State Diagram  
WAKEVERIFY: ANY OF THE FOLLOWING CONFIRM  
LEGITIMATE WAKE-UP:  
1) PUSHBUTTON CONSISTENTLY LOW (IF ENABLED)  
2) ALRT PIN CONSISTENTLY LOW (IF ENABLED)  
3) COMMUNICATIONS (HIGH+LOW DETECTED)  
4) CHARGER CONSISTENTLY DETECTED  
HW  
STARTUP  
POWER  
GOOD  
STARTUP  
WAKEVERIFY  
WAKE-UP VERIFIED  
ACTIVE  
(38µA)  
IF (FETS OFF)  
PROTECT  
(16µA)  
EITHER  
FET ON  
SHIP  
(16µA)  
ANY SHUTDOWN  
CONDITION > TMR/2  
0
NPROTCFG.DEEPSHIPEN  
SHDN  
COMMITTED  
FETS OFF,  
PKSINK = 1  
1
DEEPSHIP  
(2.2µA)  
TIMER &  
PCKPOK  
SHUTDOWN CONDITIONS:  
COMMAND, COMMS-DROP, OR UV  
SHDNTIMER COUNTS UPON CONDITION, ABORTS (CLEARS)  
UPON ABSENSE OF CONDITIONS. AT HALF TIMER, THE  
TIMER PAUSES UNLESS CHARGER IS CLEARLY ABSENT  
(PCKPOK = 0)  
Figure 25. Power Modes Transition State Diagram  
Pushbutton Wake-Up  
The ALRT/PIO pin can be used to wake up the device by enabling the pushbutton wake-up function by setting the  
nConfig.PBen. The pushbutton can be implemented in the system to wake up the device and the system as shown in the  
Pushbutton Schematic.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Register Description  
Register Description Conventions  
The following sections define standard conventions used throughout the data sheet to describe register functions and  
device behavior. Any register that does not match one of the following data formats is described as a special register.  
Standard Register Formats  
Unless otherwise stated during a given register's description, all IC registers follow the same format depending on the  
type of register. Refer to Table 15 for the resolution and range of any register described hereafter. Note that current and  
capacity values are displayed as a voltage and must be divided by the sense resistor to determine amps or amp-hours. It  
is strongly recommended to use the nRSense (1CFh) register to store the sense resistor value for use by host software.  
Table 15. ModelGauge Register Standard Resolutions  
REGISTER  
TYPE  
MINIMUM  
VALUE  
MAXIMUM  
VALUE  
LSB SIZE  
NOTES  
5.0μVh/  
327.675mVh/  
R
SENSE  
Capacity  
0.0μVh  
Equivalent to 1.0mAh with a 0.005Ω sense resistor.  
1% LSb when reading only the upper byte.  
R
SENSE  
Percentage  
Voltage  
1/256%  
0.078125mV  
1.5625μV/  
0.0%  
0.0V  
255.9961%  
5.11992V  
-51.2mV/  
51.1984mV/  
R
SENSE  
Signed 2's complement format. Equivalent to 312.5μA with a  
0.005Ω sense resistor.  
Current  
R
R
SENSE  
SENSE  
Signed 2's complement format. 1°C LSb when reading only the  
upper byte.  
Temperature  
1/256°C  
-128.0°C  
127.996°C  
Resistance  
Time  
1/4096Ω  
5.625s  
0.0Ω  
0.0s  
15.99976Ω  
102.3984hr  
Special  
Format details are included with the register description.  
Device Reset  
Device reset refers to any condition that would cause the IC to recall nonvolatile memory into RAM locations and restart  
operation of the fuel gauge. Device reset refers to the initial power-up of the IC, temporary power loss, or reset through  
the software power-on-reset command.  
Nonvolatile Backup and Initial Value  
All configuration register locations have nonvolatile memory backup that can be enabled with control bits in the nNVCfg0,  
nNVCfg1, and nNVCfg2 registers. If enabled, these registers are initialized to their corresponding nonvolatile register  
value after device reset. If the nonvolatile backup is disabled, the register restores to an alternate initial value instead.  
See each register description for details.  
Register Naming Conventions  
Register addresses are described throughout the document as 9-bit internal values from 000h to 1FFh. These addresses  
2
must be translated to 16-bit external values for the 1-Wire version or 8-bit values for the I C version. See the Memory  
section for details.  
Register names that start with a lowercase 'n', such as nPackCfg for example, indicate the register is a nonvolatile  
memory location. Register names that start with a lowercase 's' indicate the register is part of the SBS compliant register  
block.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Protection Registers  
nPackCfg Register (1B5h)  
Configure nPackCfg register according to the application schematic.  
Register Type: Special  
Factory Default Value: 0004h  
The nPackCfg register configures the number of cells and thermistors (and thermistor type) in the battery pack. It also  
configures the charge pump and backup regulator voltage levels. nPackCfg configuration must match the pack hardware  
for the proper operation of the IC. See the Typical Application Circuits section for recommended nPackCfg settings based  
on operating circuit configuration. Table 16 shows the register format.  
Table 16. nPackCfg (1B5h) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
AOCfg  
BtPkEn  
0
THType  
0
CPCfg  
0
0
0
NThrms  
NCELLS  
0: Always write 0  
NCELLS: Number of Cells. This field configures the IC for the number of cells in series in the cell pack. Set NCELLS =  
cellcount-2.  
NThrms: Number of Thermistor Channels. 000b: only die temp, 001b: die temp and 1 thermistor channel enabled, 010b:  
die temp and 2 thermistor channels enabled, 011b: die temp and 3 thermistor channels enabled, 100b: die temp and 4  
thermistor channels enabled etc.  
THType: If using 10kΩ NTC thermistor, set THType = 0. If using 100kΩ NTC thermistor, set THType = 1.  
CPCfg: Charge Pump Voltage Configuration. Set according to the desired gate drive. Note that there is a trade-off in  
quiescent vs. gate-drive. Set CPCfg = {00b,01b,10b} for {6V, 8V, 10V} settings.  
AOCfg: Always-on Regulator Configuration.  
AOCfg VALUE  
DESCRIPTION  
00b  
01b  
10b  
11b  
AOLDO is disabled.  
AOLDO is enabled. Output is 3.4V.  
AOLDO is enabled. Output is 1.8V.  
AOLDO is enabled. Output is 3.4V.  
BtPkEn: Enable Pckp and Batt Channels update. If set to 0 Pckp/Batt channels updates every 22.4s. If set to 1 Pckp/  
Batt channels update after all cell measurements are completed.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Voltage Protection Registers  
nUVPrtTh Register (1D0h)  
Factory Default Value: 508Ch  
The nUVPrtTh register shown in Table 17 sets undervoltage protection, deep-discharge-state protection, and  
undervoltage-shutdown thresholds.  
Table 17. nUVPrtTh Register (1D0h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
UVP  
0
UOCVP  
UVShdn  
UVP: UnderVoltage Protection threshold. The IC opens the discharge FET when VCell < UVP. UVP can be configured  
from 2.2V to 3.46V in 20mV steps. UVP is unsigned.  
UOCVP: Under Open Circuit Voltage Protection Threshold (also refered to as SmartEmpty). The IC opens the discharge  
FET when VFOCV < UOCVP. UOCVP is relative to UVP and can be configured from UVP to UVP + 1.28V in 40mV  
steps. UOCVP is unsigned.  
UVShdn: UnderVoltage Shutdown Threshold. The IC shutdowns when VCell < UVShdn. UVShdn is relative to UVP and  
can be configured from UVP - 0.32V to UVP + 0.28V in 40mV steps.  
nJEITAV Register (1D9h)  
Factory Default Value: 0059h  
The nJEITAV register, shown in Table 18, sets the JEITA Charge Voltage configuration for the IC. The JEITA charge  
voltage can be read from a charger to set the appropriate charge voltage based on the temperature. Also, this value is  
used to determine the overvoltage-protection threshold.  
Each charge voltage register is an offset with a 5 or 20mV resolution. The RoomChargeV offset is defined relative to  
a normal standard charge setting of 4.2V. The additional charge voltages are relative to RoomChargeV based on the  
temperature. To disable the temperature dependence and create a flat charging voltage across the temperature range,  
set dWarmChargeV, dColdChargeV, and dHotChargeV to a value of 00b.  
Table 18. nJEITAV Register (1D9h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
RoomChargeV  
dWarmChargeV  
dColdChargeV  
dHotChargeV  
RoomChargeV: RoomChargeV defines the charge voltage between temperatures T2 "Cold" and T3 "Warm", relative to  
a standard 4.2V setting, providing a range of 3.56V to 4.835V in 5mV steps. RoomChargeV is a signed configuration. Set  
to 00h to configure for standard 4.2V.  
dColdChargeV: ColdChargeV defines the delta charge voltage (relative to RoomChargeV) between temperatures T1  
and T2, relative to the room setting, providing a range of RoomChargeV to (RoomChargeV-140mV) in -20mV steps.  
dColdChargeV configuration is unsigned.  
dWarmChargeV: WarmChargeV defines the delta charge voltage (relative to RoomChargeV) between temperatures  
TWarm and T3, relative to the room setting, providing a range of RoomChargeV to (RoomChargeV-60mV) in -20mV  
steps. dWarmChargeV configuration is unsigned.  
dHotChargeV: HotChargeV defines the delta charge voltage (relative to WarmChargeV) between temperatures T3  
and T4, relative to the room setting, providing a range of WarmChargeV to (WarmChargeV-140mV) in -20mV steps.  
dHotChargeV configuration is unsigned.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
nOVPrtTh Register (1DAh)  
Factory Default Value: B754h  
The nOVPrtTh register shown in Table 19 sets the permanent overvoltage protection threshold, the charge-detection  
threshold, the overvoltage-protection threshold, and the overvoltage-protection-release threshold. dOVP and dOVPR are  
relative to the Charge Voltage that is set in the nJEITAV register and have a 10mV resolution.  
Table 19. nOVPrtTh Register (1DAh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
OVPPermFail  
ChgDetTh  
dOVP  
dOVPR  
dOVP: Delta from ChargeVoltage to Overvoltage Protection. dOVP sets JEITA overvoltage protection relative to  
ChargeVoltage (see nJEITAV). If nNVCfg1.enJP is disabled, then OVP voltage is calculated from RoomChargeV across  
all temperature zones. This is a positive number with 10mV resolution and 150mV range. Overvoltage protection is  
calculated as:  
OVP = ChargeVoltage + dOVP x 10mV  
dOVPR: Delta from Overvoltage Protection to the Overvoltage-Release Threshold. dOVPR sets overvoltage-protection  
release relative to the overvoltage-protection setting. This is a positive number with 10mV resolution and is translated to  
a negative offset relative to OVP. Overvoltage-protection release is calculated as:  
OVPR = OVP - dOVPR x 10mV  
OVPPermFail: Permanent Failure OVP (permanent overvoltage protection) Threshold. Permanent failure overvoltage  
protection occurs when any cell voltage register reading exceeds this value. The OVPPermFail range is  
OVP_threshold  
+ 40mV to OVP_threshold  
+ 340mV with a 20 mV lsb.  
Room  
Room  
OVP_PermFail_Threshold = OVP  
+ 40mV + (OVPPermFail x 20mV)  
Room  
ChgDetTh: Charger Detection Threshold. The IC determines that a charger is connected when PCKP > (BATT +  
ChgDetTh). ChgDetTh has a range of 10mV to 80mV with a 10mV lsb.  
nBalTh Register (1D4h)  
Factory Default Value: 0000h  
The nBalCfg register shown in Table 20 sets the balancing and imbalance settings and thresholds.  
Table 20. nBalTh Register (1D4h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
0
0
Zener  
BALCFG  
Rmismatch  
Imbalance  
0: Set 0, do not set 1.  
Zener: Zener Balancing Enable. Set to 1 to enable the Zener Balancing functionality. Set to 0 to disable the Zener  
Balancing. When Zener Balancing is enabled, the IC acts as if a Zener diode is placed in parallel with each cell. The  
reverse breakdown voltage of the virtual Zener diode is the ChargingVoltage register. Whenever nBalTh.Zener = 1, the  
IC actively discharges the highest voltage cell with a voltage higher than the ChargingVoltage register.  
BALCFG: Balancing Configuration. This field sets the cell balancing voltage threshold. When set to 0, cell balancing is  
disabled. When BALCFG bits are set to any nonzero value, cell balancing begins when inside the cell balancing window  
as shown in Figure 22. See RMismatch section for details.  
Rmismatch: Rmismatch is set according to the following equation:  
nBalTh.Rmismatch = 32 x Rmismatch(mΩ)/125mΩ (maximum settable Rmismatch is 121mΩ)  
Choose Rmismatch in mΩ approximately 20% of nominal battery resistance. The default recommendation is  
nBalTh.Rmismatch = 3 corresponding with 11.7mΩ. See the RMismatch section for details.  
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Imbalance: Cell Imbalance Protection Threshold. Set the amount of cell imbalance that creates a charge protection fault.  
Set Imbalance to 0 to disable cell imbalance protection. The LSB size is 10mV.  
Current Protection Registers  
nODSCTh Register (1DDh)  
Factory Default Value: 0EAFh  
The nODSCTh register sets the current thresholds for each overcurrent alert. The format of the registers is shown in  
Table 21.  
Table 21. nODSCTh Register (1DDh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
X
OCTH  
SCTH  
ODTH  
X: Don't Care.  
SCTH: Short-Circuit Threshold Setting. Sets the short-circuit threshold to a value between 0mV and -155mV with a step  
size of -5mV. The SCTH bits are stored such that 1Fh = 0mV and 00h = -155mV. Short-circuit threshold is calculated as  
-155mV + (SCTH x 5mV)).  
ODTH: Overdischarge Threshold Setting. Sets the overdischarge threshold to a value between 0mV and -77.5mV with  
a step size of -2.5mV. The ODTH bits are stored such that 1Fh = 0mV and 00h = -77.5mV. Overdischarge threshold is  
calculated as -77.5mV + (ODTH x 2.5mV)).  
OCTH: Overcharge Threshold Setting. Sets the overcharge threshold to a value between 0mV and 38.75mV with a step  
size of 1.25mV. The OCTH bits are stored such that 1Fh = 0mV and 00h = 38.75mV. Overcharge threshold is calculated  
as 38.75mV - (OCTH x 1.25mV)).  
Table 22 shows sample values of calculated mV thresholds for OCTH, SCTh, and ODTH. Equivalent current thresholds  
are shown assuming a 5mΩ sense resistor.  
Table 22. OCTH, SCTh, and ODTH Sample Values  
OCTH  
SCTH  
ODTH  
00h  
01h  
02h  
04h  
08h  
10h  
14h  
18h  
1Eh  
1Fh  
38.75mV  
37.50mV  
36.25mV  
33.75mV  
28.75mV  
18.75mV  
13.75mV  
8.75mV  
7.75A  
7.50A  
7.25A  
6.75A  
5.75A  
3.75A  
2.75A  
1.75A  
0.25A  
0.000A  
-155mV  
-150mV  
-145mV  
-135mV  
-115mV  
-75mV  
-55mV  
-35mV  
-5mV  
-31.00A  
-30.00A  
-29.00A  
-27.00A  
-23.00A  
-15.00A  
-11.00A  
-7.00A  
-77.5mV  
-75.0mV  
-72.5mV  
-67.5mV  
-57.5mV  
-37.5mV  
-27.5mV  
-17.5mV  
-2.5mV  
-15.50A  
-15.00A  
-14.50A  
-13.50A  
-11.50A  
-7.50A  
-5.50A  
-3.50A  
-0.50A  
0.00A  
1.25mV  
-1.00A  
0.00mV  
0mV  
0.00A  
0.0mV  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
nODSCCfg Register (1DEh)  
Factory Default Value: 4355h  
The nODSCCfg register configures the delay behavior for the short-circuit, overdischarge-current, and overcharge-  
current comparators. The format of the register is shown in Table 23.  
Table 23. nODSCCfg Register (1DEh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
X
1
X
X
SCDLY  
X
1
X
1
OCDLY  
X: Don't Care.  
SCDLY: Short-Circuit Delay. Configure from 0h to Fh to set short circuit detection debouncing delay between 70μs and  
985μs (70μs + 61μs x SCDLY). There may be up to 31μs of additional delay before the short-circuit's alert affects the  
discharge FET.  
OCDLY: Overdischarge and Overcharge Current Delay. Configure from 1h to Fh to set overdischarge/overcharge  
detection debouncing delay between 70μs and 14.66ms (70μs + 977μs x OCDLY).  
nIPrtTh1 Register (1D3h)  
Factory Default Value: 4BB5h  
The nIPrtTh1 register shown in Table 24 sets upper and lower limits for overcurrent protection when current exceeds  
the configuration threshold. The upper 8-bits set the overcharge current-protection threshold and the lower 8-bits set the  
overdischarge current-protection threshold. Protection threshold limits are configurable with 400μV resolution over the  
full operating range of the current register.  
Table 24. nIPrtTh1 Register (1D3h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
OCCP  
ODCP  
OCCP: Overcharge Current-Protection Threshold at Room Temperature. Overcharge current-protection occurs when the  
current register reading exceeds this value. This field is signed 2's complement with 400μV LSb resolution to match the  
upper byte of the current register. HotCOEF, WarmCOEF, and ColdCOEF re-scales nIPrtTh1.OCCP in hot, warm, and  
cold zone.  
For example, in warm zone, overcharge current-protection threshold updates to OCCP x WarmCOEF.  
See the nJEITAC register for HotCOEF, WarmCOEF, and ColdCOEF definitions and the nTPrtTh2 and nTPrtTh3  
registers for temperature zone definitions.  
ODCP: Overdischarge Current-Protection Threshold. Overdischarge current-protection occurs when current register  
reading exceeds this value. This field is signed 2's complement with 400μV LSb resolution to match the upper byte of the  
current register.  
The fault delay for OCCP and ODCP is configured in nDelayCfg.OverCurrTimer.  
nJEITAC Register (1D8h)  
Factory Default Value: 644Bh  
The nJEITAC register shown in Table 25 sets the nominal room temperature charging current and the coefficients to  
scale the charging current across the temperature zones shown in Figure 3. The WarmCOEF, ColdCOEF, and HotCOEF  
coefficients impact the charging current as well as OCCP and ODCP (See nIPrtTh1).  
To disable the temperature dependence and create a flat charging current across the temperature range, set the lower  
byte of nJEITAC to a value of FFh.  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Table 25. nJEITAC Register (1D8h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
RoomChargingCurrent  
WarmCOEF  
ColdCOEF  
HotCOEF  
RoomChargingCurrent: Sets the nominal room-temperature charging current. The LSB is 200μV. This value is  
unsigned with a range of 00h (0mV) to FFh (51.2mV).  
HotCOEF: Coefficient 12.5% to 100% relative to ChargingCurrent for controlling the charge current at hot. HotCOEF  
has a 12.5% LSB resolution. The resulting HotChargingCurrent is controlled by the following equation:  
HotChargingCurrent = RoomChargingCurrent x (HotCOEF+1)/8  
WarmCOEF: Coefficient 62.5% to 100% relative to ChargingCurrent for controlling the charge current at warm.  
WarmCOEF has a 12.5% LSB resolution. The resulting WarmChargingCurrent is controlled by the following equation:  
WarmChargingCurrent = RoomChargingCurrent x (WarmCOEF+5)/8  
ColdCOEF: Coefficient 12.5% to 100% relative to ChargingCurrent for controlling the charge current at cold. ColdCOEF  
has a 12.5% LSB resolution. The resulting ColdChargingCurrent is controlled by the following equation:  
ColdChargingCurrent = RoomChargingCurrent x (ColdCOEF+1)/8  
HotCOEF, WarmCOEF, and ColdCOEF also rescale nIPrtTh1.OCCP.  
Temperature Protection Registers  
The IC has five thresholds for charging protection as well as overdischarge temperature protection and overtemperature  
permanent failure protection. The standard register format for each of these thresholds is a signed 2's compliment  
number with 1°C resolution. The IC has 2°C of hysterisis for releasing temperature faults.  
nTPrtTh1 Register (1D1h)  
Factory Default Value: 3700h  
The nTPrtTh1 register shown in Table 26 sets T1 "Too-Cold" and T4 "Too-Hot" thresholds which control JEITA and  
provide charging (Too-Hot or Too-Cold) protection. nProtMiscTh.TooHotDischarge provides discharging (Too-Hot only)  
protection.  
Table 26. nTPrtTh1 Register (1D1h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
T4 ("Too-Hot")  
T1 ("Too-Cold")  
T1-T4 follow JEITA's naming convention for temperature ranges.  
T1: JEITA "Too-Cold" temperature threshold. When Temp < T1, charging is considered unsafe and unhealthy, and the  
IC blocks charging.  
T4: JEITA "Too-Hot" temperature threshold. When Temp > T4, charging is blocked by the IC.  
nTPrtTh2 Register (1D5h)  
Factory Default Value: 2D0Ah  
The nTPrtTh2 register shown in Table 27 sets T2 "Cold" and T3 "Hot" thresholds which control JEITA and modulate  
charging (Hot or Cold) guidance and protection.  
Table 27. nTPrtTh2 (1D5h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
T3 ("Hot")  
T2 ("Cold")  
T1-T4 follow JEITA's naming convention for temperature ranges.  
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T2: JEITA "Cold" temperature threshold. When Temp < T2, charging current/voltage should be reduced, and the charge-  
protection thresholds are adjusted accordingly.  
T3: JEITA "Hot" temperature threshold. When Temp > T3, charging current/voltage should be reduced and the charge-  
protection thresholds are adjusted accordingly.  
nTPrtTh3 Register (1D2h) (beyond JEITA)  
Factory Default Value: 5528h  
The nTPrtTh3 register shown in Table 28 sets Twarm and TpermFailHot thresholds which control JEITA and modulate  
charging (Warm) guidance and protection.  
Table 28. nTPrtTh3 Register (1D2h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
TpermFailHot  
Twarm  
nTPrtTh3 defines protection thresholds beyond standard JEITA definition.  
Twarm: Warm temperature threshold (between 'normal' and THot), giving an extra temperature region for changing  
charging current and charging voltage control.  
TpermFailHot: If enabled, the IC goes into permanent failure mode, and permanently disables the charge FET as well  
as trips the secondary protector (if installed) or blows the fuse (if installed).  
nProtMiscTh Register (1D6h)  
Factory Default Value: 7A28h  
The nProtMiscTh register is shown in Table 29 and sets a few miscellaneous protection thresholds.  
Table 29. nProtMiscTh Register (1D6h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
QovflwTh  
TooHotDischarge  
CurrDet  
DieTempTh  
DieTempTh: Sets the Dietemp Overtemperature-Protection Threshold. DieTempTh is used as a proxy for FET  
temperature and controls the FET overtemperature fault. The range is 50°C and 125°C with a 5°C LSB.  
CurrDet: CurrDet is configurable from 25μV/R  
to 400μV/R  
in 25μV/R  
steps (equivalent to 5mA to  
SENSE  
SENSE  
SENSE  
80mA in 5mA steps with a 5mΩ sense resistor). It is a threshold to detect discharging and charging events. If current >  
CurrDet then charging; if current < -CurrDet then discharging.  
CurrDet Threshold = (CurrDet + 1) x 5mA (i.e., 0 = 5mA for 5mΩ R  
)
SENSE  
TooHotDischarge: Sets the Overtemperature-Protection Threshold Associated with Discharge. TooHotDischarge has  
2°C LSB's and defines the delta between Over-Temp-Charge (nTPrtTh1.T4) and Over-Temp-Discharge. The range is  
nTPrtTh1.T4(TooHot) to nTPrtTh1.T4(TooHot) + 30°C.  
QovflwTh: Capacity Overflow Threshold. QovflwTh sets the coefficient for the capacity overflow-protection threshold.  
Capacity overflow protection threshold = designCap x coefficient. The IC monitors the delta coulomb count (deltaQ)  
between the coulomb count at the start-of-charge and the present coulomb count. If the delta Q exceeds the capacity  
overflow-protection threshold, indicating that the charger has charged more than the expected capacity of the battery,  
then a ProtStatus.Qovrflw fault is generated. The coefficient is calculated as: coefficient = 1.0625 + (QovflwTh x 0.0625).  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
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SHA-256 Authentication  
Fault Timer Registers  
nDelayCfg Register (1DCh)  
Factory Default Value: AB3Dh  
Set nDelayCfg to configure debounce timers for various protection faults. A fault state is concluded only if the condition  
persists throughout the duration of the timer.  
Table 30. nDelayCfg (1DCh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
CHGWDT  
FullTimer  
OVPTimer  
OverCurrTimer  
PermFailTimer  
TempTimer  
UVPTimer  
UVPTimer: Set UVPTimer to configure the Undervoltage-Protection timer.  
Shutdown Timer: Set UVPTimer to configure the Shutdown timer.  
Table 31. UVPTimer Settings  
UVPTIMER SETTING  
UVPTimer Configuration  
Shutdown Timer Configuration  
0
1
2
3
0 to 351ms  
22.5s to 45s  
2.8s to 5.625s  
45s to 90s  
5.625s to 11.25s  
90s to 180s  
11.25s to 22.5s  
3min to 6min  
TempTimer: Set TempTimer to configure the fault-timing for the following faults: Too-Cold-Charging (TooColdC), Too-  
Hot-Charging (TooHotC), Die-Hot (DieHot), and Too-Hot-Discharging (TooHotD).  
The TempTimer setting also controls the temperature transition delay. If the IC detects a change in temperature zone  
that results in the OVP level being reduced to a lower level due to the JEITA configuration. There is a delay equal to the  
TempTrans Configuration before the new lower OVP threshold goes into effect.  
Table 32. TempTimer/TempTrans Setting  
TEMPTIMER SETTING  
0
1
2
3
Debounce 1  
thermistor  
Debounce up to 2  
thermistors  
Debounce up to 4  
thermistors  
Application  
No debouncing  
TempTimer  
Configuration  
0 to 351ms  
1.4s to 2.8s  
2.8s to 5.625s  
5.625s to 11.25s  
TempTrans  
Configuration  
3.151s to  
4.55s  
5.951s to 8.75s  
11.55s to 17.15s  
23.351s to 34.851s  
PermFailTimer: Set PermFailTimer to configure the fault-timing for permanent failure detection. PermFailTimer must be  
set to 3 for permanent failure detection to function properly.  
Table 33. PermFailTimer Settings  
PERMFAILTIMER SETTING  
0 (NOT RECOMMENDED)  
1
2
3
Configuration  
0 to 351ms  
351ms to 0.7s  
0.7s to 1.4s  
1.4s to 2.8s  
OverCurrTimer: OverCurrTimer configures the fault timing for the slow overcharge-current detection (OCCP) as well as  
overdischarge-current detection (ODCP). The additional fast hardware protection thresholds are described in nODSCCfg  
and nODSCTh.  
Table 34. OverCurrTimer Settings  
OVERCURRTIMER  
0
1
2
3
4
5
6
7
SETTING  
Configuration  
0.351s to  
0.7s  
0.7s to  
1.4s  
1.4s to  
2.8s  
2.8s to  
5.6s  
5.6s to  
11.25s  
11.25s to  
22.5s  
22.5s to  
45s  
0-351ms  
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OVPTimer: Set OVPTimer to configure the fault timing for Overvoltage-Protection.  
Imbalance Timer: Set OVPTimer to configure the Imbalance fault timer.  
Table 35. OVPTimer Settings  
OVPTIMER/IMBALANCE SETTING  
0
1
2
3
OVPTimer Configuration  
0 to 351ms  
0 to 351ms  
2.8s to 5.625s  
2.8s to 5.625s  
5.625s to 11.25s  
5.625s to 11.25s  
11.25s to 22.5s  
11.25s to 22.5s  
Imbalance Timer Configuration  
FullTimer: Set FullTimer to configure the timing for full-detection. When charge-termination conditions are detected and  
after the timeout, the CHG FET turns off (if feature is enabled).  
Prequal Timer: Set FullTimer to configure the timing for prequal charging. Prequal Timer and FullTimer share the same  
bits in the nDelayCfg register.  
Table 36. FullTimer/Prequal Settings  
FULLTIMER  
SETTING  
0
1
2
3
4
5
6
7
FullTimer  
Configuration  
67s to  
90s  
2.25min to  
3min  
4.5min to  
6min  
9min to  
12min  
18min to  
24min  
36min to  
48min  
72min to  
96min  
33s to 44s  
18min  
to  
24min  
36min  
to  
48min  
Prequal Timer  
Configuration  
16.875s to  
22.5s  
33s to  
44s  
2.25min to  
3min  
4.5min to  
6min  
9min to  
12min  
67s to 90s  
CHGWDT: Set CHGWDT to configure the charger communication watchdog timer. If enabled, the IC charge-protects  
whenever the host has stopped communicating longer than this timeout.  
Table 37. ChgWDT Settings  
CHGWDT SETTING  
0
1
2
3
Configuration  
11.2s to 22.5s  
22.5s to 45s  
45s to 90s  
90s to 3min  
Battery Internal Self-Discharge Detection Registers  
Factory Default nProtCfg2 Value: A065h  
Factory Default nTCurve Value: 0000h  
To enable the ISD feature using the coulombic-efficiency (CE) method, configure LeakFaultCfg, LeakCurrTh, and CEEn  
as shown in Table 38 and Table 39. Choose the alert and fault mode with LeakFaultCfg and configure the thresholds  
with LeakCurrTh, as shown in Table 40. When the ISD alerts are enabled, any leakage current detected beyond the  
threshold is indicated by the ProtAlrt.LDET bit and Status.PA bit (if nConfig.ProtAlrtEn = 1). If the ALRT pin is enabled for  
alerts (nConfig.Aen = 1 and nConfig.ProtAlrtEn = 1), then the pin indicates the ISD alert. To service the alert, first clear  
the ProtAlrt register and then clear Status.PA. The event is also indicated in nBattStatus.LDET, which is recorded in the  
permanent lifelog.  
The reported leakage-current measurement can be read from two different different registers:  
● LeakCurrRep = 15-bit unsigned left-justified value with an LSB of 1.5625μV/16 (or 0.3125mA/16 with 5mΩ sense  
resistor)  
nBattStatus.LeakCurr = 8-bit unsigned value with an LSB of 3.125μV (or 0.625mA with 5mΩ sense resistor)  
Contact Maxim for configuring the ISD feature.  
Table 38. nProtCfg2 Register (1DFh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
1
0
CEEn  
0
LeakCurrTh  
CheckSum  
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Table 39. nTCurve Register (0x1C9) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
X
X
X
X
X
X
X
X
X
X
X
X
X
LeakFaultCfg  
Table 40. Alert and Fault Mode Settings  
LEAKFAULTCFG  
DESCRIPTION  
LEAKCURRTH RESOLUTION  
ALERT RANGE  
FAULT RANGE  
SETTING  
Note: Leakage current above LeakCurrTh triggers an alert/fault. Currents refer to  
the 5mΩ R  
SENSE  
000  
001  
010  
Disabled  
Alert only  
Fault = Alert + 5mA  
0.625mA  
to 10mA  
5.625mA to 15mA  
10.625mA to 20mA  
0.625mA  
Fault = Alert +  
10mA  
011  
100  
Fault Only (+5mA  
offset)  
6.25mA to 25mA  
101  
110  
Alert Only  
1.25mA  
Fault = Alert + 5mA  
1.25mA  
to 20mA  
6.25mA to 25mA  
21.25mA to 40mA  
Fault = Alert +  
20mA  
111  
X: Don't Care  
CEEn: Coulombic-efficiency (CE) method enable. Set to 1 to enable self-discharge detection  
LeakFaultCfg: Leakage Fault Configuration. Set LeakFaultCfg to configure the alert and fault behavior as shown in Table  
40.  
LeakCurrTh: Leakage Current Threshold is an unsigned 4-bit threshold for leakage current alert and fault generation.  
The LSB resolution is either 0.625mA or 1.25mA based on the LeakCurrCfg setting as shown in Table 40. When alerts  
and faults are both enabled, the fault threshold is either 5mA, 10mA or 20mA above the alert threshold as shown in the  
Description column of Table 40.  
CheckSum: Protector NVM CheckSum. CheckSum is the checksum value of the protection registers for validating NVM  
at startup when nNVCfg1.enProtChksm = 1.  
LeakCurrRep Register (0x16F)  
The LeakCurrRep register contains the reported leak current when it is enabled with nProtCfg2.F2FEn as shown in Table  
41.  
Table 41. LeakCurrRep Register (0x16F) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
0
Reported LeakCurrent  
Reported LeakCurrent: Reported Leak Current is an unsigned 15-bit leakage current. This register stores the reported  
leakage current with an LSB of 1.5625μV/16 (or 0.3125mA/16 with a 5mΩ sense resistor). The range is 0mA to  
639.98mA.  
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Status/Configuration Protection Registers  
The following registers configure and report various protection and alert statuses as measured by the IC.  
nProtCfg Register (1D7h)  
Factory Default Value: 0900h  
The Protection Configuration register contains enable bits for various protection functions.  
Table 42. nProtCfg Register (1D7h) Format  
D15  
D14  
D13  
D12  
D4  
D11  
D10  
D9  
D8  
ChgWDTEn  
FullEn  
SCTest  
CmOvrdEn  
0
PreqEn  
D7  
D6  
D5  
D3  
D2  
D1  
D0  
Reserved  
PFEn  
DeepShpEn  
OvrdEn  
UVRdy  
FetPFEn  
Reserved  
Reserved  
PFEn: PermFail Enable. Set PFEn = 1 to enable the detection of a Permanent Failure to permanently turn the FETs off.  
All types of permanent failures operate only if PFEn = 1 and are all disabled if PFEn = 0. PFEn must be enabled for the  
PFAIL pin to be operational. See the Permanent Fail section for more details.  
FetPFEn: FET PermFail Enable. Set to 1 to enable Charge FET and Discharge FET open or short failure detection,  
which registers a permanent failure and permanently turn the FETs off and drive the PFAIL pin high. PFEn must also be  
set for the FET PermFail Enable to operate.  
UVRdy: Undervoltage-Ready. In the undervoltage-protected state (but higher than undervoltage shutdown), this bit  
chooses whether or not the CHG FET remains enabled. Configure UVRdy = 0 to keep the CHG FET and corresponding  
pumps powered during undervoltage protection. In this state, the pack is quickly responsive to charger connection, but  
the quiescent consumption remains 38μA. Configure UVRdy = 1 to disable the CHG FET and corresponding charge  
pumps during undervoltage protection. In this state, the consumption drops to 16μA, but there may be hibernate latency  
between when the charger is applied and the battery begins charging.  
OvrdEn: Override Enable. Set OvrdEn = 1 to enable the Alert pin to be an input to turn disable the protection FETs. See  
2
the Disabling FETs by Pin-Control or I C Command for more details.  
CmOvrdEn: Comm Override Enable. This bit when set to 1, allows the ChgOff and DisOff bits in CommStat to be set  
2
2
by I C/1Wire communication to turn off the protection FETs. See the Disabling FETs by Pin-Control or I C Command for  
more details.  
2
DeepShpEn: Deepship Enable. Set DeepShpEn = 1 to associate shutdown actions (I C shutdown command or  
communication removal) with 2.2μA shutdown. All registers power down in this mode. Set DeepShpEn = 0 to continue  
full calculations but with protector disabled (CHGEn = 0, DISEn = 0, pump off), operating at 6μA consumption.  
PreqEn: PreQual Enable. Set PreqEn = 1 to enable the Pre-Qual enable functionality.  
SCTest: Set SCTest = 01b to source 30μA from BATT to PCKP for testing the presence/removal of any overload/short-  
circuit at PCKP. SCTest is only used during special circumstances when DIS = off. Particularly if an overdischarge current  
fault has been tripped. The IC sets SCTest to push 30μA into PCKP. If PCKP rises above the 1.5V SCDet threshold, then  
the overload is considered "removed" and safe to reconnect the DIS FET. Because of this, the PCKP resistor must be  
10kΩ or less for proper short-circuit removal detection. Set SCTest = 00b to disable.  
FullEn: Full Charge Protection Enable. Set FullEn = 1 to enable the full charge protection feature where the charge  
FET opens when the battery is fully charged (RepSOC reaches 100%) plus a programmable delay that is configured in  
nDelayCfg.FullTimer.  
ChgWDEn: Charger WatchDog Enable. If the charger watchdog feature is enabled, the protector disallows charging  
unless communication has not been detected for more than the Charger WatchDog delay that is configured in  
nDelayCfg.ChgWdg.  
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Status Register (000h)  
Register Type: Special  
Nonvolatile Backup: None  
Initial Value: 0x0002  
The Status register maintains all flags related to alert thresholds and battery insertion or removal. Table 43 shows the  
Status register format.  
Table 43. Status Register (000h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
PA  
Smx  
Tmx  
Vmx  
X
Smn  
Tmn  
Vmn  
dSOCi  
Imx  
X
X
X
Imn  
POR  
X
POR: Power-On Reset. This bit is set to a 1 when the device detects that a software or hardware POR event has  
occurred. This bit must be cleared by system software to detect the next POR event. POR is set to 1 at power-up.  
Imn: Minimum Current Alert Threshold Exceeded. This bit is set to a 1 whenever a Current register reading is below the  
minimum IAlrtTh value. This bit is cleared automatically when Current rises above minimum IAlrtTh value. Imn is set to 0  
at power-up.  
Imx: Maximum Current Alert Threshold Exceeded. This bit is set to a 1 whenever a Current register reading is above the  
maximum IAlrtTh value. This bit is cleared automatically when Current falls below maximum IAlrtTh value. Imx is set to 0  
at power-up.  
dSOCi: State-of-Charge 1% Change Alert. This is set to 1 whenever the RepSOC register crosses an integer percentage  
boundary such as 50.0%, 51.0%, etc. Must be cleared by host software. dSOCi is set to 0 at power-up.  
Vmn: Minimum Voltage Alert Threshold Exceeded. This bit is set to a 1 whenever a VCell register reading is below the  
minimum VAlrtTh value. This bit may or may not need to be cleared by system software to detect the next event. See  
Config.VS bit description. Vmn is set to 0 at power-up.  
Tmn: Minimum Temperature Alert Threshold Exceeded. This bit is set to a 1 whenever a Temperature register reading  
is below the minimum TAlrtTh value. This bit may or may not need to be cleared by system software to detect the next  
event. See Config.TS bit description. Tmn is set to 0 at power-up.  
Smn: Minimum SOC Alert Threshold Exceeded. This bit is set to a 1 whenever SOC falls below the minimum SAlrtTh  
value. This bit may or may not need to be cleared by system software to detect the next event. See Config.SS and  
MiscCFG.SACFG bit descriptions. Smn is set to 0 at power-up.  
Vmx: Maximum Voltage Alert Threshold Exceeded. This bit is set to a 1 whenever a VCell register reading is above the  
maximum VAlrtTh value. This bit may or may not need to be cleared by system software to detect the next event. See  
Config.VS bit description. Vmx is set to 0 at power-up.  
Tmx: Maximum Temperature Alert Threshold Exceeded. This bit is set to a 1 whenever a Temperature register reading  
is above the maximum TAlrtTh value. This bit may or may not need to be cleared by system software to detect the next  
event. See Config.TS bit description. Tmx is set to 0 at power-up.  
Smx: Maximum SOC Alert Threshold Exceeded. This bit is set to a 1 whenever SOC rises above the maximum SAlrtTh  
value. This bit may or may not need to be cleared by system software to detect the next event. See Config.SS and  
MiscCFG.SACFG bit descriptions. Smx is set to 0 at power-up.  
PA: Protection Alert. This bit is set to a 1 when there is a protection event. The details of which protection event can be  
found in the ProtAlrts register. This bit must be cleared by system software to detect the next protection event. However,  
prior to clearing this bit, the ProtAlrts register must first be written to 0x0000. ProtAlrt is set to 0 at power-up.  
X: Don’t Care. This bit is undefined and can be logic 0 or 1.  
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Status2 Register (0B0h)  
Register Type: Special  
Nonvolatile Backup: None  
Initial Value: 0x0000  
The Status2 register maintains status of hibernate mode. Table 44 shows the Status2 register format.  
Table 44. Status2 Register (0B0h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
X
X
X
X
X
X
X
X
X
X
X
X
X
X
Hib  
x
Hib: Hibernate Status. This bit is set to a 1 when the device is in hibernate mode or 0 when the device is in active mode.  
Hib is set to 0 at power-up.  
X: Don’t Care. This bit is undefined and can be logic 0 or 1.  
nBattStatus Register (1A8h)  
Battery Status Nonvolatile Register  
The Battery Status register contains the permanent battery status information. If nProtCfg.PFen = 1, then a permanent  
fail results in permanently turning the FETs off to ensure the safety of the battery and the PFAIL pin is driven high.  
Table 45. nBattStatus Register (1A8h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
PermFail  
OVPF  
OTPF  
CFETFs  
DFETFs  
FETFo  
LDet  
ChksumF  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
LeakCurr  
PermFail—Permanent Failure. This bit is set if any permanent failure is detected.  
CFETFsChargeFET failure-short detected. If the IC detects that the charge FET is shorted and cannot be opened, it  
sets the CFETFs bit and the PermFail bit. This function is enabled with nProtCfg.FetPFEn.  
DFETFsDischargeFET failure-short detected. If the IC detects that the discharge FET is shorted and cannot be  
opened, it sets the DFETFs and the PermFail bit. This function is enabled with nProtCfg.FetPFEn.  
FETFoFET Failure Open. If the IC detects an open FET failure it sets FETFo. In this case, if the IC detects either CHG  
or DIS FET to have failed open, then it sets FETFo. This function is enabled with nProtCfg.FetPFEn.  
LDet—Leakage Detection Fault. This bit is set when a leakage detection fault has been detected.  
ChksumFChecksum Failure. ChksumF protection related NVM configuration registers checksum failure. In the case  
of a checksum failure, the device sets the PermFail bit but does not write it to NVM in order to prevent using an additional  
NVM write. This allows the PermFail bit to be cleared by the host so that the INI file can be reloaded.  
LeakCurr—Leakage Current. Leakage current is an unsigned 8-bit result of leakage current from self-discharge in a cell.  
This field saves the leakage current from the LeakCurrRep register. The LSB for this field is 3.125μV (or 0.625mA with a  
5mΩ R  
with a range of 0mA to 159.375mA).  
SENSE  
nFaultLog Register (1AEh)  
This register has dual functionality depending on configuration settings. If nNVCfg2.enFL = 1, the nFaultLog register  
contains a history of protection events that have been logged at any moment by the device during the log interval and is  
formatted as shown in Table 46.  
Alternatively, if nNVCfg0.enAF = 1, the register becomes repurposed for Age Forecasting data. If neither option is  
enabled, this register can be used as general-purpose user memory.  
This register is periodically saved to nonvolatile memory as part of the life-logging function.  
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Table 46. nFaultLog Register (1AEh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
TooHotC  
TooColdC  
OVP  
OCCP  
DieHot  
Imbalance  
UVP  
ODCP  
ProtStatus Register (0D9h)  
The Protection Status register contains the fault states of the protection state machine  
Table 47. ProtStatus Register (0D9h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
ChgWDT  
TooHotC  
Full  
TooColdC  
OVP  
OCCP  
Qovflw  
PreqF  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
Imbalance  
PermFail  
DieHot  
TooHotD  
UVP  
ODCP  
ResDFault  
Ship  
Ship—A flag to indicate the ship state.  
PermFail—Permanent Failure Detected. See the Permanent Failure section for details.  
Discharging Faults:  
ODCP - Overdischarge current  
UVP - Undervoltage  
TooHotD - Overtemperature for discharging  
DieHot - Overtemperature for die temperature  
Charging Faults:  
TooHotC- Overtemperature for charging  
OVP - Overvoltage  
OCCP - Overcharge current  
Qovrflw - Capacity overflow  
TooColdC - Undertemperature for charging  
Full - Full detection  
ChgWDT - Charge communication watchdog timer  
DieHot - Overtemperature for die temperature  
Imbal - Multicell imbalance  
PreqF - Prequal timeout  
See the Protector section for details of each fault.  
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ProtAlrt Register (0AFh)  
The Protection Alerts register contains a history of any protection events that have been logged by the device and is  
formatted as shown in Table 48. If any bit of ProtAlrt is 1, then the Status.PA bit is also 1 if Config.ProtAlrtEn = 1. Once a  
bit is set, it remains set until cleared by the host. The Alert pin is driven low if Config.AEn = 1 and Config.ProtAlrtEn = 1.  
The bits in ProtAlrt mirror the bits in ProtStatus with the exception of the LDET bit.  
Table 48. ProtAlrt Register (0AFh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
ChgWDT  
TooHotC  
Full  
TooColdC  
OVP  
OCCP  
Qovflw  
PreqF  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
Imbalance  
PermFail  
DieHot  
TooHotD  
UVP  
ODCP  
ResDFault  
LDet  
HProtCfg2 Register (1F1h)  
Register Type: Special  
Nonvolatile Backup: None  
POR Value: 0x0000  
The HProtCfg2 Register provides the status of the protection FETs and a variety of other functions as shown in Table 49.  
Table 49. HProtCfg2 Register (1F1h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
AOLDO  
CommOvrd  
CPCfg  
PBEN  
DISs  
CHGs  
CHGs: CHG FET Status, 1 = On, 0 = Off.  
DISs: DIS FET Status, 1 = On, 0 = Off.  
PBEN: Pushbutton Enable. 1 = Pushbutton wakeup on ALRT pin is enabled. 0 = Disabled.  
CPCfg: Charge Pump Gate Drive Voltage Configuration. 00b = 6V, 01b = 8V, 10b = 10V.  
CommOvrd: Command Override Enable. 1 = FET override function enabled. Allows communication to turn off CHG, DIS  
FETs by writing the CommStat register. 0 = FET override function disabled.  
AOLDO: Always-on LDO Configuration.  
AOLDO VALUE  
DESCRIPTION  
00b  
01b  
10b  
11b  
AOLDO is disabled.  
AOLDO is enabled. Output is 3.4V  
AOLDO is enabled. Output is 1.8V.  
AOLDO is enabled. Output is 3.4V.  
Nonvolatile Memory Status  
The IC reports the status of nonvolatile memory operations by updating the NVBusy and NVError bits in the CommStat  
register to indicate when the nonvolatile memory is busy, idle, or if there has been an error.  
Analog Measurement Registers  
The IC monitors cell pack voltage, cell pack current, cell pack temperature, and the voltage of the cell. This information is  
provided to the fuel gauge algorithm to predict cell capacity and also made available to the user. Note that ADC related  
register information is not maintained while the IC is in shutdown mode. The following register information is invalid until  
the first measurement cycle after the IC returns to active mode of operation.  
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Voltage Measurement  
VCell Register (01Ah)  
Register Type: Voltage  
Nonvolatile Backup: None  
Each update cycle, the lowest reading from all cell voltage measurements is placed in the VCell register. VCell is used  
as the voltage input to the fuel gauge algorithm.  
AvgVCell Register (019h)  
Register Type: Voltage  
Nonvolatile Backup: None  
The AvgVCell register reports an average of the VCell register readings. The time period for averaging is configurable  
from a 12 second to 24 minute time period. See the nFilterCfg register description for details on setting the time filter.  
The first VCell register reading after power-up or exiting shutdown mode sets the starting point of the AvgVCell register.  
Note that when a cell relaxation event is detected, the averaging period changes to the period defined by the RelaxCfg.dt  
setting. The register reverts back to its normal averaging period when a charge or discharge current is detected.  
Cell1-Cell4 Registers (0D8h-0D5h)  
Register Type: Voltage  
Nonvolatile Backup: None  
Each update cycle, the cell voltage measurement for each cell is placed in appropriate the Cell1-Cell4 register.  
AvgCell1-AvgCell4 Registers (0D4h-0D1h)  
Register Type: Voltage  
Nonvolatile Backup: None  
The AvgCell1-AvgCell4 registers report an 8-sample filtered average of the corresponding Cell1-Cell4 register readings.  
Batt Register (0DAh)  
Register Type: Special  
Nonvolatile Backup: None  
The Batt registers contains the total pack voltage measured inside the protector on a 20.48V scale with an LSB of  
0.3125mV.  
PCKP Register (0DBh)  
Register Type: Special  
Nonvolatile Backup: None  
The PCKP register contains the voltage between PACK+ and GND on a 20.48V scale with an LSB of 0.3125mV.  
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MaxMinVolt Register (0008h)  
Register Type: Special  
Nonvolatile Backup: Saves to nMaxMinVolt (1ACh) if nNVCfg2.enMMV is set (does not restore from nonvolatile).  
Initial Value: 0x00FF  
The MaxMinVolt register maintains the maximum and minimum of all cell voltage readings since device reset. Each  
time the voltage registers update, they are compared against these values. If a new voltage channel reading is larger  
than the maximum or less than the minimum, the corresponding value is replaced with the new reading. At power-up,  
the maximum voltage value is set to 00h (the minimum) and the minimum voltage value is set to FFh (the maximum).  
Therefore, both values are updated after the first update. Host software can reset this register by writing it to its power-up  
value of 0x00FF. The maximum and minimum voltages are each stored as 8-bit values with a 20mV resolution. Table 50  
shows the register format.  
Table 50. MaxMinVolt (008h)/nMaxMinVolt (1ACh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
MaxVCELL  
MinVCELL  
MaxVCELL: Maximum channel voltage reading (20mV resolution)  
MinVCELL: Minimum VCell register reading (20mV resolution)  
MaxMinVolt is not cumulative across the entire battery lifetime. After each periodic nonvolatile-memory save, MaxMinVolt  
resets to 0x00FF to find the next max/min volt across the next segment of battery life. This behavior helps provide a  
useful log across the battery lifetime where each log segment shows the maximum and minimum voltage experienced  
across only that segment.  
Current Measurement  
The IC is able to monitor the current flow through the cell pack by measuring the voltage between the CSN and CSP  
pins over a ±51.2mV range. While in active mode updates occur in intervals of 351.5ms. In hibernate mode, the update  
interval is set by the nHibCfg register. All ICs are calibrated for current-measurement accuracy at the factory. However,  
if the application requires, Current register readings can be adjusted by changing the nCGain register setting.  
If the application uses a sense resistor with a large temperature coefficient such as a copper metal board trace, current  
readings can be adjusted based on the temperature measured by the IC. The CGTempCo register stores a percentage  
per degrees Celsius value that is applied to current readings if the nNVCfg2.enMet bit is set. If nNVCfg1.enMtl = 0, the  
default temperature coefficient of copper is used for temperature adjustments. If enMtl = 1, the CGTempCo register value  
is used for temperature adjustments.  
Additionally, the IC maintains a record of the minimum and maximum current measured by the IC and an average current  
over a time period defined by the host. Contents of the Current and AvgCurrent registers are indeterminate for the first  
conversion cycle time period after IC power-up.  
Current Measurement Timing  
Current measurements are always enabled regardless of nPackCfg settings. Current is updated every 351ms.  
Current Register (01Ch)  
Register Type: Current  
Nonvolatile Backup: None  
The IC measures the voltage between the CSP and CSN pins and the result is stored as a two’s complement value in the  
Current register. Voltages outside the minimum and maximum register values are reported as the minimum or maximum  
value. The register value should be divided by the sense resistance to convert to amps. The value of the sense resistor  
determines the resolution and the full-scale range of the current readings. Table 51 shows range and resolution values  
for typical sense resistances.  
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Table 51. Current Measurement Range and Resolution vs. Sense Resistor Value  
SENSE  
RESISTOR nRSENSE  
(mΩ)  
CURRENT  
REGISTER  
RANGE (A)  
CAPACITY  
RESOLUTION  
(mAh)  
MAXIMUM  
CAPACITY  
(mAh)  
BATTERY FULL  
CAPACITY (mAh)  
CURRENT REGISTER  
RESOLUTION (μA)  
> 4000  
> 2000  
> 800  
> 400  
> 200  
1
2
0064h  
00C8h  
01F4h  
03E8h  
07D0h  
1562.5  
781.25  
312.5  
±51.2  
±25.6  
±10.24  
±5.12  
±2.56  
5
2.5  
1
144360  
71680  
28672  
14336  
7168  
5
10  
20  
156.25  
78.125  
0.5  
0.25  
AvgCurrent Register (01Dh)  
Register Type: Current  
Nonvolatile Backup: None  
The AvgCurrent register reports an average of Current register readings over a configurable 0.7 second to 6.4 hour time  
period. See the nFilterCfg register description for details on setting the time filter. The first Current register reading after  
returning to active mode sets the starting point of the AvgCurrent filter.  
MaxMinCurr Register (00Ah)  
Register Type: Special  
Nonvolatile Backup: Periodically saves to nMaxMinCurr (1ABh) if nNVCfg2.enMMC is set, but does not restore from  
nonvolatile memory.  
Alternate Initial Value: 0x807F  
The MaxMinCurr register maintains the maximum and minimum Current register values since the last IC reset or until  
cleared by host software. Each time the Current register updates, it is compared against these values. If the reading is  
larger than the maximum or less than the minimum, the corresponding value is replaced with the new reading. At power-  
up, the maximum current value is set to 80h (the minimum) and the minimum current value is set to 7Fh (the maximum).  
Therefore, both values are changed to the Current register reading after the first update. Host software can reset this  
register by writing it to its power-up value of 0x807F. The maximum and minimum voltages are each stored as two’s  
complement 8-bit values with 0.4mV/RSENSE resolution. Table 52 shows the register format.  
Table 52. MaxMinCurr (00Ah)/nMaxMinCurr (1ABh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
MaxCurrent  
MinCurrent  
MaxCurrent: Maximum Current register reading (0.40mV resolution)  
MinCurrent: Minimum Current register reading (0.40mV resolution)  
MaxMinCurr is not cumulative across the entire battery lifetime. After each periodic nonvolatile-memory save,  
MaxMinCurr resets to 0x807F to find the next maximum and minimum current across the next segment of battery life.  
This behavior helps provide a useful log across the battery lifetime where each log segment shows the maximum and  
minimum current experienced across only that segment.  
nCGain Register (1C8h)  
Register Type: Special  
Factory Default Value: 4000h  
The nCGain register adjusts the gain and offset of the current measurement result. The current measurement ADC is  
factory trimmed to data-sheet accuracy without the need for the user to make further adjustments. The recommended  
default for the nCGain register is 0x4000 which applies no adjustments to the Current register reading.  
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For specific application requirements, the CGain and COff values can be used to adjust readings as follows:  
Current Register = (Current ADC Reading × (CGain/256)) + COff  
CGain and COff are combined into a single register formatted as shown in Table 53.  
Table 53. nCGain Register (1C8h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
CGain  
COff  
COff: COff has a range of -32 to +31 LSbs. However, it is normally not recommended to calibrate COff. COff = 0 is  
recommended for most applications.  
CGain: The recommended default value of CGain = 0x100 corresponds to a gain of 1. CGain can be calculated as  
follows: CGain = ((MeasuredCurrent/ReportedCurrent) × 0x0100). CGain is a signed value and can be negative.  
CGTempCo (0B8h)/nCGTempCo (1C9h) Register  
Register Type: Special  
Factory Default Value: 0000h  
Alternate Initial Value: 20C8h  
Set nNVCfg2.enMet = 1 to use CGTempCo to adjust current measurements for temperature. CGTempCo has a range of  
0% to 3.1224% per degrees Celsius with a step size of 3.1224/65536 percent per degrees Celsius. If the nNVCfg1.enMtl  
bit is clear, CGTempCo defaults to a value of 20C8h (compensation for copper) or 0.4% per degrees Celsius which is  
the approximate temperature coefficient of a copper trace. If the nNVCfg1.enMtl bit is set, CGTempCo restores from  
nCGTempCo (1C9h) after IC reset allowing a custom sense resistor temperature coefficient to be used.  
nRSense Register (1CFh)  
Register Type: Special  
Factory Default Value: 01F4h  
Nonvolatile Restore: There is no associated restore location for this register.  
The nRSense register is the designated location to store the nominal sense resistor value used by the application. This  
value is not used by the IC as all current and capacity information is reported in terms of μV and μVH. Host software can  
use the nRSense register value to convert current and capacity information into mA and mAH. It is recommended that  
the sense resistor value be stored with an LSb weight of 10μΩ giving a range of 10μΩ to 655.35mΩ. Table 51 shows  
recommended register settings based on common sense resistor values.  
Copper Trace Current Sensing  
The IC has the ability to measure current using a copper board trace instead of a traditional sense resistor. The main  
difference being the ability to adjust to the change in sense resistance over temperature. To enable copper trace current  
sensing, set nNVCfg2.enMet = 1. The ICs default temperature adjustment is 0.4% per °C but can be adjusted using the  
nTCurve register if nNVCfg1.enMtl = 1. Note that copper trace current sensing cannot be enabled at the same time as  
thermistor curve adjustment. For 1-ounce copper, a length to width ratio of 6:1 creates a 0.0035Ω sense resistor which is  
suitable for most applications. Table 54 summarizes the IC setting for copper trace sensing.  
Table 54. Copper Trace Sensing  
PARAMETER  
nNVCfg1.enMet  
nNVCfg2.enMlt  
nRense  
SETTING  
RESULT  
1
0
Sense resistor temperature compensation enabled.  
Sense resistor temperature compensation set to default of 0.4% per °C (typical copper).  
Sense resistor indicator to host software set to 0.0035Ω.  
0x012C  
6:1  
R
Size  
A 6:1 length to width ratio of 1oz copper gives a resistance of 0.0035Ω.  
SENSE  
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Temperature Measurement  
The IC measures its own internal die temperature and up to four thermistors. See the nPackCfg register for details.  
Every 1.4s the IC biases a thermistor with an internal trimmed pullup. After the pullup is enabled, the IC waits for a  
settling period of tPRE prior to making measurements on the TH(1-4) pin. The active pullup is disabled when temperature  
measurements are complete. This feature limits the time the external resistor-divider network is active and lowers the  
total amount of energy used by the system.  
The ratiometric results are converted to temperature using the nThermCfg register each time one of the TH(1-4) pins are  
measured. Proper nThermCfg configuration is needed to achieve thermistor accuracy from -40°C to +85°C. Internal die  
temperature measurements are factory calibrated and are not affected by nThermCfg register settings.  
Additionally, the IC maintains a record of the minimum and maximum temperature measured and an average  
temperature over a configurable time period. See the nFilterCfg for details.  
Temperature Measurement Timing  
Temperature measurement channels are individually enabled using the nPackCfg register. ADC measurement order and  
firmware post-processing determine when a valid reading becomes available to the user. In addition, not all channels  
are measured each time through the firmware task loop. Selection options for enabled channels create a large number  
of possible timing options. DieTemp is updated every 351ms. Each thermistor measurement is updated every 1.4s x  
NTherms.  
Temp Register (01Bh)  
Register Type: Temperature  
Nonvolatile Backup: None  
The Temp register is the input to the fuel gauge algorithm. The Temp register reflects the highest thermistor temperature  
if enabled, and the die-temperature if the thermistors are disabled.  
AvgTA Register (016h)  
Register Type: Temperature  
Nonvolatile Backup: None  
The AvgTA register reports an average of the readings from the Temp register. The averaging period is configurable from  
6 minutes up to 12 hours as set by the FilterCfg register. The first Temp register reading after returning to active mode  
sets the starting point of the averaging filters.  
MaxMinTemp Register (009h)  
Register Type: Special  
Nonvolatile Backup: Periodically saves to nMaxMinTemp (1ADh) if nNVCfg2.enMMT is set, but does not restore from  
nonvolatile memory.  
Alternate Initial Value: 807Fh  
The MaxMinTemp register maintains the maximum and minimum Temp register (01Bh) values since the last fuel-gauge  
reset or until cleared by host software. Each time the Temp register updates, it is compared against these values. If  
the reading is larger than the maximum or less than the minimum, the corresponding values are replaced with the new  
reading. At power-up, the maximum value is set to 80h (minimum) and the minimum value is set to 7Fh (maximum).  
Therefore, both values are changed to the Temp register reading after the first update. Host software can reset this  
register by writing it to its power-up value of 807Fh. The maximum and minimum temperatures are each stored as two’s  
complement 8-bit values with 1°C resolution. Table 55 shows the format of the register.  
Table 55. MaxMinTemp (009h)/nMaxMinTemp (1ADh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
MaxTemperature  
MinTemperature  
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MaxTemperature: Maximum Temp register reading (1ºC resolution)  
MinTemperature: Minimum Temp register reading (1ºC resolution)  
MaxMinTemp is not cumulative across the entire battery lifetime. After each periodic nonvolatile memory save,  
MaxMinTemp resets to 807Fh to find the next maximum and minimum temperatures across the next segment of battery  
life. This behavior helps provide a useful log across the battery lifetime where each log segment shows the maximum  
and minimum temperature experienced across only that segment.  
nThermCfg Register (1CAh)  
Factory Default Value: 71BEh  
External NTC thermistors generate a temperature related voltage measured at the TH(1-4) pins. Set nThermCfg register  
to compensate thermistor for accurate translation of temperature.  
Table 56 lists common NTC thermistors with their associated Beta value and the nThermCfg value. The thermistors in  
the table translate within ±1°C from -40°C to +85°C. For other thermistors, use the equation to translate within ±2.5°C.  
Table 56. Register Settings for Common Thermistor Types  
BETA  
@ 25°C-85°C  
THERMISTOR  
R
(kΩ)  
nTHERMCFG  
25C  
Murata NCP15XH103F03RC  
Semitec 103AT-2  
10  
3435  
71BEh  
91C3h  
5183h  
48EBh  
08D9h  
10  
10  
3435  
TDK B57560G1103 7003  
Murata NCU15WF104F6SRC  
NTC TH11-4H104F  
TDK NTCG064EF104FTBX  
Other 10K  
3610  
100  
100  
100  
10  
4250  
4510  
4225  
58EFh  
1
nThermCfg = 7000h + (3245919/Beta - 512)  
1
Other 100K  
100  
nThermCfg = 3000h + (3245919/Beta - 512)  
1. Use Beta 25°C-85°C.  
DieTemp Register (034h)  
Register Type: Temperature  
Nonvolatile Backup: None  
This register displays temperature in degrees Celsius, ±128°C or 1°C in the high-byte or 1/256°C LSB.  
AvgDieTemp Register (040h)  
Register Type: Temperature  
Nonvolatile Backup: None  
The AvgDieTemp register reports a 4-sample filtered average of the DieTemp register.  
Temp1/2/3/4 Registers (13Ah-137h)  
Register Type: Temperature  
Nonvolatile Backup: None  
These registers display temperature readings from thermistor 1/2/3/4 (if enabled) in degrees Celsius, ±128ºC or 1°C in  
the high-byte or 1/256°C LSB.  
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AvgTemp1/2/3/4 Registers (136h-133h)  
Register Type: Temperature  
Nonvolatile Backup: None  
The AvgTemp1/2/3/4 registers report a 4-sample filtered average of the Temp1/2/3/4 registers.  
Power  
Power Register (0B1h)  
Instantaneous power calculation from immediate current and voltage. LSB is 0.4mW with a 5mΩ sense resistor.  
AvgPower Register (0B3h)  
Filtered Average Power from the power register. LSB is 0.4mW with a 5mΩ sense resistor. Filter bits located in  
Config2.POWR.  
Charge Control Registers  
ChargingCurrent Register (028h)  
Register Type: Current  
Nonvolatile Backup: None  
The ChargingCurrent register reports the prescribed charging current. See the Charging Prescription section for more  
details.  
ChargingVoltage Register (02Ah)  
Register Type: Voltage  
Nonvolatile Backup: None  
The ChargingVoltage register reports the prescribed charging voltage. See the Charging Prescription section for more  
details.  
nStepChg Register (1DBh)  
Factory Default Value: C884h  
The nStepChg register defines the step-charging prescription as shown in Figure 10.  
Note: This only effects the ChargingCurrent output register which prescribes a charge current controlled by the external  
charger. To disable step-charging prescription, set nStepChg = FF00h.  
Table 57. nStepChg Register (1DBh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
StepCurr1  
StepCurr2  
StepdV0  
StepdV1  
StepCurr1 and StepCurr2: Both of these register bit-fields scale the JEITA zone charge current down by a 4-bit ratio  
from 1/16 to 16/16.  
StepCurrent1 = ChargingCurrent  
StepCurrent2 = ChargingCurrent  
x StepCurr1/16 = 2000mA x 12/16 = 1500mA  
x StepCurr2/16 = 2000mA x 8/16 = 1000mA  
JEITAZONE  
JEITAZONE  
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StepdV0 and StepdV1: These register bit-fields configure StepVolt0 and StepVolt1 relative to the JEITA zone charge  
voltage. Both registers are negative offsets relative to JEITA ChargeVoltage, and both registers support 10mV LSB.  
StepV0 = ChargingVoltage  
StepV1 = ChargingVoltage  
- (StepdV0 x 10mV) = 4.2V - (8 x 10mV) = 4.12V  
- (StepdV1 x 10mV) = 4.2V - (4 x 10mV) = 4.16V  
JEITAZONE  
JEITAZONE  
nChgCfg (1C2h) Prequal Configuration  
Set nProtCfg.PreqEn to enable the prequal charging feature and configure the settings as shown in Table 58. Set  
nChgCtl (1C3h) = 00E1h for proper operation.  
Factory Default nChgCfg Value: 2061h  
Factory Default nChgCtl Value: 00E1h  
The IC regulates the CHG gate voltage in order to control/limit the following:  
● Charge Current  
● CHG FET and DIS FET Temperature (using DieTemp)  
Table 58. nChgCfg Register (1C2h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
0
0
1
PreQualVolt  
HeatLim  
PreChgCurr  
PreQualVolt: Sets the prequal voltage. Prequal Voltage = UVP + PreQualVolt x 20mV, PreQualVolt is a signed 2's  
compliment value with range of UVP – 320mV to UVP + 300mV.  
PreChgCurr: Sets the precharging current for the ChargingCurrent register. Precharge current is calculated as:  
PreChargeCurrent = nJEITAC.RoomChargingCurrent x PreChgCurr/128 (range from RoomChargingCurrent/128 to  
RoomChargingCurrent/4)  
HeatLim: Set HeatLim to limit the thermal dissipation in the protection FETs during prequal regulation. Set HeatLim from  
102mW to 819mW in 102mW steps. The effective power-dissipation limit is (HeatLim + 1) x 102mW.  
ModelGauge m5 Algorithm Registers  
ModelGauge m5 Registers  
For accurate results, ModelGauge m5 uses information about the cell and the application as well as the real-time  
information measured by the IC. Figure 26 shows inputs and outputs to the algorithm grouped by category. Analog  
input registers are the real-time measurements of voltage, temperature, and current performed by the IC. Application-  
specific registers are programmed by the customer to reflect the operation of the application. The Cell Characterization  
Information registers hold characterization data that models the behavior of the cell over the operating range of the  
application. The Algorithm Configuration registers allow the host to adjust the performance of the IC for its application.  
The Learned Information registers allow an application to maintain the accuracy of the fuel gauge as the cell ages. The  
register description sections describe each register function in detail.  
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VCELL  
AVCAP / AVSOC  
REPCAP / REPSOC  
MIXCAP / MIXSOC  
FULLCAP  
CURRENT  
TEMPERATURE  
AVGVCELL  
AVGCURRENT  
AVGTEMPERATURE  
FULLCAPREP  
FULLCAPNOM  
RSLOW  
TTE / TTF / AtTTE  
VFOCV / VFSOC  
VRIPPLE  
NDESIGNVOLT  
NDESIGNCAP  
NICHGTERM  
AGE  
ModelGauge m5  
AGEFORECAST  
ALGORITHM  
CYCLES  
CHARACTERIZATION  
NRIPPLECFG  
TABLES  
NCONVGCFG  
FULLCAPNOM  
NCVCFG  
CYCLES  
NQRTABLES00,10,20,30  
NFULLSOCTHR  
NRCOMP0  
NAGEFCCFC  
TIMERH  
NLEARNCFG  
NQRTABLES00,10,20,30  
NFLITERCFG  
NIAVGEMPTY  
NFULLCAPNOM  
NVEMPTY  
NRELAXCFG  
RCOMP0  
NMISCCFG  
TEMPCO  
NTEMPCO  
ATRATE  
FULLCAPREP  
NIAVGEMPTY  
Figure 26. ModelGauge m5 Registers  
ModelGauge m5 Algorithm Output Registers  
The following registers are outputs from the ModelGauge m5 algorithm. The values in these registers become valid  
480ms after the IC is reset.  
RepCap Register (005h)  
Register Type: Capacity  
Nonvolatile Backup: None  
RepCap or Reported Capacity is a filtered version of the AvCap register that prevents large jumps in the reported value  
caused by changes in the application such as abrupt changes in temperature or load current. See the Fuel-Gauge Empty  
Compensation section for details.  
RepSOC Register (006h)  
Register Type: Percentage  
Nonvolatile Backup: None  
RepSOC is a filtered version of the AvSOC register that prevents large jumps in the reported value caused by changes  
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in the application such as abrupt changes in load current. RepSOC corresponds to RepCap and FullCapRep. RepSOC  
is intended to be the final state-of-charge percentage output for use by the application. See the Fuel-Gauge Empty  
Compensation section for details.  
FullCapRep Register (010h)  
Register Type: Capacity  
Nonvolatile Backup and Restore: nFullCapRep (1A9h) or nFullCapNom (1A5h)  
This register reports the full capacity that goes with RepCap, generally used for reporting to the user. A new full-capacity  
value is calculated at the end of every charge cycle in the application.  
TTE Register (011h)  
Register Type: Time  
Nonvolatile Backup: None  
The TTE register holds the estimated time-to-empty for the application under present temperature and load conditions.  
The TTE value is determined by dividing the AvCap register by the AvgCurrent register. The corresponding AvgCurrent  
filtering gives a delay in TTE empty, but provides more stable results. The TTE register has a maximum value of 102.3  
hours. When TTE is larger than the maximum value, the TTE register saturates and contains the maximum value  
(FFFFh). The host can calculate times longer than the maximum value with the following equation:  
TTE  
(hours) = AvCap(mAh)/AvgCurrent(mA)  
CALCULATED  
See the Typical Operating Characteristics for sample performance.  
TTF Register (020h)  
Register Type: Time  
Nonvolatile Backup: None  
The TTF register holds the estimated time-to-full for the application under present conditions. The TTF value is  
determined by learning the constant current and constant voltage portions of the charge cycle based on experience of  
prior charge cycles. Time-to-full is then estimated by comparing the present charge current to the charge termination  
current. Operation of the TTF register assumes all charge profiles are consistent in the application. See the nTTFCfg for  
configuration and the Typical Operating Characteristics for sample performance.  
Age Register (007h)  
Register Type: Percentage  
Nonvolatile Backup: None  
The Age register contains a calculated percentage value of the application’s present cell capacity compared to its  
expected capacity. The result can be used by the host to gauge the battery pack health as compared to a new pack of  
the same type. The equation for the register output is:  
Age Register = 100% x (FullCapRep register/DesignCap register)  
Cycles Register (017h) and nCycles (1A4h)  
Register Type: Special  
Nonvolatile Backup and Restore: nCycles (1A4h)  
The Cycles register maintains a total count of the number of charge/discharge cycles of the cell that have occurred. The  
result is stored as a percentage of a full cycle. For example, a full charge/discharge cycle results in the Cycles register  
incrementing by 100%. The Cycles register has a full range of 0 to 16383 cycles with a 25.0% LSb. Cycles is periodically  
saved to nCycles to provide a long term nonvolatile cycle count.  
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Table 59. Cycles Register (017h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
CycleCount (LSb 25%)  
Table 60. nCycles Register (1A4h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
CycleCount (LSb 25%, 50%, 100%, or 200%)  
nFib  
The LSb of Cycles register is 25%.  
The LSb of nCycles.CycleCount depends on the setting of nNVCfg2.fibScl as shown in Table 61.  
Configure nFib = 0 for any new pack. nFib is a reset counter which controls Fibonacci-saving reset accelleration (see  
the 100 Record Life Logging section). Each reset followed by any nonvolatile save increases by 1. Maximum value is 7  
without overflow.  
Table 61. nNVCfg2.FibScl Setting Determines LSb of nNVCfg2.CyclesCount  
NNVCFG2.FIBSCL  
NCYCLES.CYCLECOUNT LSB  
00b  
01b  
10b  
11b  
25%  
50%  
100%  
200%  
Timer Register (03Eh)  
Register Type: Special  
Nonvolatile Backup: None  
Initial Value: 0x0000  
This register holds timing information for the fuel gauge. It is available to the user for debugging purposes. The Timer  
register LSb is equal to 175.8ms giving a full-scale range of 0 to 3.2 hours.  
TimerH Register (0BEh)  
Register Type: Special  
Nonvolatile Backup and Restore: nTimerH (1AFh) if nNVCfg2.enT is set  
Alternate Initial Value: 0000h  
This register allows the IC to track the age of the cell. An LSb of 3.2 hours gives a full-scale range for the register of up  
to 23.94 years. If enabled, this register is periodically backed up to nonvolatile memory as part of the learning function.  
FullCap Register (010h)  
Register Type: Capacity  
Nonvolatile Restore: Derived from nFullCapNom (1A5h)  
This register holds the calculated full capacity of the cell based on all inputs from the ModelGauge m5 algorithm including  
empty compensation. A new full-capacity value is calculated continuously as application conditions change.  
nFullCapNom Register (1A5h)  
Register Type: Capacity  
Nonvolatile Backup and Restore: FullCapNom (023h)  
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This register holds the calculated full capacity of the cell, not including temperature and empty compensation. A new full-  
capacity nominal value is calculated each time a cell relaxation event is detected. This register is used to calculate other  
outputs of the ModelGauge m5 algorithm.  
RCell Register (014h)  
Register Type: Resistance  
Nonvolatile Backup: None  
Initial Value: 0290h  
The RCell register displays the calculated internal resistance of the cell or the average internal resistance of each cell in  
the cell stack. RCell is determined by comparing open-circuit voltage (VFOCV) against measured voltage (VCell) over a  
long time period while under load current.  
VRipple Register (0B2h)  
Register Type: Special  
Nonvolatile Backup: None  
Initial Value: 0000h  
The VRipple register holds the slow average RMS value of the VCell register reading variation compared to the AvgVCell  
register. The default filter time is 22.5s. See the nRippleCfg register description. VRipple has an LSb weight of 1.25mV/  
128.  
nVoltTemp Register (1AAh)  
Register Type: Special  
Nonvolatile Backup: AvgVCell and AvgTA registers if nNVCfg2.enVT = 1.  
This register has dual functionality depending on configuration settings. If nNVCfg2.enVT = 1, this register provides  
nonvolatile back up of the AvgVCell and AvgTA registers as shown in Table 62.  
Table 62. nVoltTemp Register (1AAh) Format when nNVCfg2.enVT = 1  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
AvgVCell Upper 9 Bits  
AvgTA Upper 7 Bits  
Alternatively, if nNVCfg0.enAF = 1, this register stores an accumulated age slope value to be used with the Age  
Forecasting algorithm. Regardless of which option is enabled, this register is periodically saved to nonvolatile memory as  
part of the learning function. If neither option is enabled, this register can be used as general-purpose user memory.  
ModelGauge m5 Algorithm Input Registers  
The following registers are inputs to the ModelGauge algorithm and store characterization information for the application  
cells as well as important application-specific specifications. They are described only briefly here. Contact Maxim for  
information regarding cell characterization.  
nXTable0 (180h) to nXTable11 (18Bh) Registers  
Register Type: Special  
Nonvolatile Restore: There are no associated restore locations for these registers.  
Cell characterization information used by the ModelGauge algorithm to determine capacity versus operating conditions.  
This table comes from battery characterization data. These are nonvolatile memory locations.  
nOCVTable0 (190h) to nOCVTable11 (19Bh) Registers  
Register Type: Special  
Nonvolatile Restore: There are no associated restore locations for these registers.  
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SHA-256 Authentication  
Cell characterization information used by the ModelGauge algorithm to determine capacity versus operating conditions.  
This table comes from battery characterization data. These are nonvolatile memory locations.  
nQRTable00 (1A0h) to nQRTable30 (1A3h) Registers  
Register Type: Special  
Nonvolatile Backup and Restore: QRTable00 to QRTable30 (012h, 022h, 032h, 042h)  
Factory Default Values: QRTable00 to QRTable30 (1050h, 8002h, 078Ch, 0880h)  
The nQRTable00 to nQRTable30 register locations contain characterization information regarding cell capacity that is not  
available under certain application conditions.  
nFullSOCThr Register (1C6h)  
Register Type: Percentage  
Nonvolatile Restore: FullSOCThr (013h) if nNVCfg1.enFT is set.  
Alternate Initial Value: 80%  
The nFullSOCThr register gates detection of end-of-charge. VFSOC must be larger than the nFullSOCThr value before  
nIChgTerm is compared to the AvgCurrent register value. The recommended nFullSOCThr register setting for most  
custom characterized applications is 95% . For EZ performance applications, the recommendation is 80% (5005h). See  
the nIChgTerm register description and End-of-Charge Detection section for details. Table 63 shows the register format.  
Table 63. nFullSOCThr (1C6h)/FullSOCThr (013h) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
nFullSOCThr  
1
0
1
nVEmpty Register (19Eh)  
Register Type: Special  
Nonvolatile Restore: VEmpty (03Ah) if nNVCfg0.enVE is set.  
Alternate Initial Value: 9659h (3.0V/3.56V)  
The nVempty register sets thresholds related to empty detection during operation. Table 64 shows the register format.  
Table 64. VEmpty (03Ah)/nVEmpty (19Eh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
VE  
VR  
VE: Empty Voltage. Sets the voltage level for detecting empty. A 10mV resolution gives a 0 to 5.11V range. This value is  
written to 3.3V after reset if nonvolatile backup is disabled.  
VR: Recovery Voltage. Sets the voltage level for clearing empty detection. Once the cell voltage rises above this point,  
empty voltage detection is re-enabled. A 40mV resolution gives a 0 to 5.08V range. This value is written to 3.88V after  
reset if nonvolatile backup is disabled.  
nDesignCap Register(1B3h)  
Register Type: Capacity  
Nonvolatile Restore: DesignCap (018h) if nNVCfg0.enDC is set  
Alternate Initial Value: FullCapRep register value  
The nDesignCap register holds the expected capacity of the cell. This value is used to determine age and health of the  
cell by comparing against the measured present cell capacity.  
nIChgTerm Register (19Ch)  
Register Type: Current  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Nonvolatile Restore: IChgTerm (01Eh) if nNVCfg0.enICT is set  
Alternate Initial Value: 1/3rd the value of the nFullCapNom register (corresponds to C/9.6)  
The nIChgTerm register allows the device to detect when a charge cycle of the cell has completed. nIChgTerm should  
be programmed to the exact charge termination current used in the application. The device detects end-of-charge if all  
the following conditions are met:  
• VFSOC Register > FullSOCThr Register  
• AND IChgTerm x 0.125 < Current Register < IChgTerm x 1.25  
• AND IChgTerm x 0.125 < AvgCurrent Register < IChgTerm x 1.25  
See the End-of-Charge Detection section for more details.  
nRComp0 Register (1A6h)  
Register Type: Special  
Nonvolatile Restore: RComp0 (038h)  
The nRComp0 register holds characterization information critical to computing the open circuit voltage of a cell under  
loaded conditions.  
nTempCo Register (1A7h)  
Register Type: Special  
Nonvolatile Restore: TempCo (039h)  
The nTempCo register holds temperature compensation information for the nRComp0 register value.  
ModelGauge m5 Algorithm Configuration Registers  
The following registers allow operation of the ModelGauge m5 algorithm to be adjusted for the application. It is  
recommended that the default values for these registers be used.  
nConfig Register (1B0h)  
Register Type: Special  
Factory Default Value: 2290h  
Nonvolatile Restore: Config (00Bh) and Config2 (0ABh)  
The nConfig register holds all shutdown enable, alert enable, and temperature enable control bits. Writing a bit location  
enables the corresponding function within one task period. Table 65, Table 66, and Table 67 show the register formats.  
Table 65. nConfig Register (1B0h) Format  
D15 D14 D13 D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
PAen SS TS VS FIFOen PBen DisBlockRead  
0
AtRateEn COMMSH ALSH  
1
FTHRM Aen dSOCen TAlrtEn  
Table 66. Config Register (00Bh) Format  
D15 D14 D13 D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2 D1  
D0  
0
SS TS VS DisLDO PBen DisBlockRead  
0
SHIP COMMSH  
0
ETHRM FTHRM Aen  
0
PAen  
Table 67. Config2 Register (0ABh) Format  
D15  
D14  
D13  
D12  
D11 D10 D9 D8  
D7  
D6  
TAlrtEn  
D5 D4 D3 D2 D1 D0  
DRCfg  
POR_CMD  
0
AtRtEn  
ADCFIFOen  
POWR  
dSOCen  
0
1
0
0
0: Bit must be written 0. Do not write 1.  
1: Bit must be written 1. Do not write 0.  
PAen: Protection Alert Enable. Set PAen = 1 to enable this feature that saves the protector faults (TooHotC, TooColdC,  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
OVP, OCCP, DieHot, TooHotD, UVP, ODCP, LDet) into the low byte of the nBattStatus register. After each life logging  
write to NVM, the low byte of nBattStatus is cleared.  
PBEn: PushButton Enable. Set PBEn = 1 to enable wakeup by pushbutton. This application allows a product to be  
completely sealed with battery disconnected until a shared system button is pressed.  
Aen: Enable Alert on Fuel-Gauge Outputs. When Aen = 1, violation of any of the alert threshold register values by  
temperature, voltage, or SOC triggers an alert. This bit affects the ALRT pin operation only. The Smx, Smn, Tmx, Tmn,  
Vmx, Vmn, Imx, and Imn bits of the Status register (000h) are not disabled. Note that if this bit is set to 1, the ALSH bit  
should be set to 0 to prevent an alert condition from causing the device to enter shutdown mode.  
FTHRM: Force Thermistor Bias Switch. This allows the host to control the bias of the thermistor switch or enable  
fast detection of battery removal. Set FTHRM = 1 to always enable the thermistor bias switch. With a standard 10kΩ  
thermistor, this adds an additional 200μA, approximately, to the current drain of the circuit.  
ETHRM: Enable Thermistor. Set to logic 1 to enable the automatic TH output bias and TH measurement.  
COMMSH: Communication Shutdown. Set to logic 1 to force the device to enter shutdown mode if both SDA and SCL  
2
are held low (I C version) or DQ is held low (1-Wire version) for more than the timeout of the ShdnTimer register. This  
also configures the device to wake up on a rising edge of any communication. Note that if COMMSH is set to 0, the  
device wakes up an edge of any of the SDA/DQ or SCL/OD pins. See the Modes of Operation section.  
SHIP: Ship or Deepship Command. Write this bit to logic 1 to force into ship or deepship mode based on  
nProtCfg.DeepShpEn after timeout of the Shutdown Timer register which is configured in nDelayCfg.UVPTimer. SHIP is  
reset to 0 at power-up and upon exiting ship or deepship mode.  
VS: Voltage ALRT Sticky. When VS = 1, voltage alerts can only be cleared through software. When VS = 0, voltage alerts  
are cleared automatically when the threshold is no longer exceeded.  
TS: Temperature ALRT Sticky. When TS = 1, temperature alerts can only be cleared through software. When TS = 0,  
temperature alerts are cleared automatically when the threshold is no longer exceeded.  
SS: SOC ALRT Sticky. When SS = 1, SOC alerts can only be cleared through software. When SS = 0, SOC alerts are  
cleared automatically when the threshold is no longer exceeded.  
POR_CMD: Firmware Restart. Set this bit to 1 to restart IC firmware operation without performing a recall of nonvolatile  
memory into RAM. This allows different IC configurations to be tested without changing nonvolatile memory settings. This  
bit is set to 0 at power-up and automatically clears itself after firmware restart.  
TAlrten: Temperature Alert Enable. Set this bit to 1 to enable temperature based alerts. Write this bit to 0 to disable  
temperature alerts. This bit is set to 1 at power-up.  
dSOCen: SOC Change Alert Enable. Set this bit to 1 to enable the Status.dSOCi bit function. Write this bit to 0 to disable  
the Status.dSOCi bit. This bit is set to 0 at power-up.  
DRCfg: Deep Relax Time Configuration. 00b for 0.8 hours to 1.6 hours, 01b for 1.6 hours to 3.2 hours, 10b for 3.2 hours  
to 6.4 hours and 11b for 6.4 hours to 12.8 hours.  
POWR: Sets the time constant for the AvgPower register. The default POR value of 0000b gives a time constant of 0.7s.  
The equation setting the period is:  
(POWR-6)  
AvgPower time constant = 45s x 2  
FIFOen: ADC FIFO Enable. See the 16-reading ADC FIFO section for details. Set nConfig.ADCFIFOen = 1 to enable  
continuous acquisition mode for ADC FIFO. Set nConfig.ADCFIFOen = 0 to disable continuous acquisition mode  
for ADC FIFO. If continuous mode is disabled, a single-cycle acquisition mode for ADC FIFO is enabled by setting  
Config2.ADCFIFOen = 1.  
DisLDO: Disable AOLDO. Set DisLDO to 1 to disable the Always-On LDO if it is enabled in nPackCfg.AOCfg.  
DisBlockRead: Disable SBS Block Read. Set DisBlockRead to 1 for normal read access in the 16h memory space. Clear  
DisBlockRead to 0 to enable SBS block reads when SBS Mode is enabled with nNVCfg0.SBSen. The default setting for  
DisBlockRead is 1.  
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nNVCfg0 Register (1B8h)  
Register Type: Special  
Nonvolatile Restore: There is no associated restore location for this register.  
Factory Default Value: 0A00h  
The nNVCfg0 register manages nonvolatile memory backup of device and fuel gauge register RAM locations. Each bit  
of the nNVCfg0 register, when set, enables a given register location to be restored from a corresponding nonvolatile  
memory location after reset of the IC. If nonvolatile restore of a given register is not enabled, that location initializes to a  
default value after reset instead. See the individual register descriptions for details. Table 68 shows the nNVCfg0 register  
format.  
Table 68. nNVCfg0 Register (1B8h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
enOCV  
enX  
enSHA  
0
1
enFCfg  
enRCfg  
enLCfg  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
enICT  
enDP  
enVE  
enDC  
enMC  
enAF  
enSBS  
enSBS: Enable SBS. This bit enables SBS functions of the IC. See the SBS section. When set, all registers accessed  
with the SBS 2-Wire address are regularly updated. When this bit is clear, all SBS related nonvolatile configuration  
register locations can be used as general-purpose user memory. In addition, setting enSBS = 1 enables the bus timeout  
hardware required for proper SMBus support.  
enAF: Enable Age Forecasting. Set this bit to enable Age Forecasting functionality. When this bit is clear, nAgeFcCfg  
can be used for general-purpose data storage. When set, nVoltTemp becomes repurposed for Age Forecasting data.  
When enAF is set to 1, nNVCfg2.enVT and nNVCfg2.enFL must be 0 for proper operation.  
enMC: Enable MiscCfg restore. Set this bit to enable MiscCfg register to be restored after reset by the nMiscCfg register.  
When this bit is clear, MiscCfg restores with its alternate initialization value and nMiscCfg can be used for general-  
purpose data storage.  
enDC: Enable DesignCap restore. Set this bit to enable DesignCap register to be restored after reset by the nDesignCap  
register. When this bit is clear, DesignCap restores with its alternate initialization value and nDesignCap can be used for  
general-purpose data storage.  
enVE: Enable VEmpty restore. Set this bit to enable VEmpty register to be restored after reset by the nVEmpty register.  
When this bit is clear, VEmpty restores with its alternate initialization value (3.0V) and nVEmpty can be used for general-  
purpose data storage.  
enDP: Enable Dynamic Power. Set this bit to enable Dynamic Power calculations. When this bit is set to 0, Dynamic  
Power calculations are disabled and registers MaxPeakPower/SusPeakPower/MPPCurrent/SPPCurrent can be used as  
general-purpose memory.  
enICT: Enable IChgTerm restore. Set this bit to enable IChgTerm register to be restored after reset by the nIChgTerm  
register. When this bit is clear, IChgTerm restores to a value of 1/3 C-rate (from FullCapNom) and nIChgTerm can be  
used for general-purpose data storage.  
enLCfg: Enable LearnCfg restore. Set this bit to enable LearnCfg register to be restored after reset by the nLearnCfg  
register. When this bit is clear, LearnCfg restores with its alternate initialization value and nLearnCfg can be used for  
general-purpose data storage.  
enRCfg: Enable RelaxCfg restore. Set this bit to enable RelaxCfg register to be restored after reset by the nRelaxCfg  
register. When this bit is clear, RelaxCfg restores with its alternate initialization value and nRelaxCfg can be used for  
general-purpose data storage.  
enFCfg: Enable FilterCfg restore. Set this bit to enable the FilterCfg register to be restored after reset by the nFilterCfg  
register. When this bit is clear, FilterCfg restores with its alternate initialization value and nFilterCfg can be used for  
general-purpose data storage.  
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SHA-256 Authentication  
enSHA: Set to 1 to configure the MTP at address 0x1DC to 0x1DF as SHA space. Set to 0 to configure address 0x1DC  
to 0x1DF as user MTP.  
enX: Enable XTable restore. Set this bit to enable nXTable register locations to be used for cell characterization data.  
When this bit is clear, the IC uses the default cell model and all nXTable register locations can be used as general-  
purpose user memory.  
enOCV: Enable OCVTable restore. Set this bit to enable nOCVTable register locations to be used for cell  
characterization data. When this bit is clear, the IC uses the default cell model and all nOCVTable register locations can  
be used as general-purpose user memory.  
nNVCfg1 Register (1B9h)  
Register Type: Special  
Factory Default Value: 0182h  
Nonvolatile Restore: There is no associated restore location for this register  
The nNVCfg1 register manages nonvolatile memory restore of device and fuel gauge register RAM locations. Each bit  
of the nNVCfg1 register, when set, enables a given register location to be restored from a corresponding nonvolatile  
memory location after reset of the IC. If nonvolatile backup of a given register is not enabled, that location initializes to a  
default value after reset instead. See the individual register descriptions for details. Table 69 shows the nNVCfg1 register  
format.  
Table 69. nNVCfg1 Register (1B9h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
0
enMtl  
enFTh  
0
0
enJP  
enSC  
enProt  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
enJ  
enProtChksm  
0
enTTF  
enAT  
0
enCTE  
0
enProt: Enable Protector. Set this bit to enable the protector. When this bit is clear, protector is disabled.  
enJ: Enable ChargingCurrent and ChargingVoltage. Set this bit to 1 to enable ChargingCurrent and ChargingVoltage  
update feature.  
enJP: Enable Protection with JEITA (temperature region dependent). Set this bit to 1 to enable JEITA Protection. Clear  
this bit to disable JEITA protection and make OVP and OCCP thresholds become flat.  
enSC: Enable special chemistry model. Set this bit to 1 if a special chemistry model is used. This bit enables the use of  
nScOcvLim.  
enCTE: Enable Converge-to-Empty. Set this bit to enable the nConvgCfg register settings to affect the converge to empty  
functionality of the IC. When this bit is clear, converge-to-empty is disabled and nConvgCfg can be used for general-  
purpose data storage.  
enAT: Enable Alert Thresholds. Set this bit to enable IAlrtTh, VAlrtTh, TAlrtTh, and SAlrtTh registers to be restored  
after reset by the nIAlrtTh, nVAlrtTh, nTAlrtTh, and nSAlrtTh registers respectively. When this bit is clear these registers  
restore with their alternate initialization values and the nonvolatile locations can be used for general-purpose data  
storage.  
enTTF: Enable time-to-full configuration. Set to 1 to enable nTTFCfg (configures CVMixCap and CVHalftime) for tuning  
of Time-To-Full performance. Otherwise, CVMixCap and CVHalftime restore to their alternate initialization values and  
nTTFCfg can be used for general-purpose data storage.  
enFTh: Enable FullSOCThr configuration restore. Set this bit to enable FullSOCThr register to be restored after reset  
by the nFullSOCThr register. When this bit is clear FullSOCThr restores with its alternate initialization value (80%) and  
nFullSOCThr can be used for general-purpose data storage.  
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SHA-256 Authentication  
enMtl: Enable CGTempCo restore. Set this bit to enable CGTempCo register to be restored after reset by the nTCurve  
register. When this bit is clear CGTempCo restores with its alternate initialization value (copper). nTCurve can be used  
for general-purpose data storage if enMtl is clear.  
enProtChksm: Enable protector checksum function.  
x: Don't care.  
nNVCfg2 Register (1BAh)  
Register Type: Special  
Factory Default Value: BE2Dh  
Nonvolatile Restore: There is no associated restore location for this register  
The nNVCfg2 register manages nonvolatile memory backup and restore of device and fuel gauge register RAM locations.  
Each bit of the nNVCfg2 register, when set, enables a given register location to be restored from or backed up to a  
corresponding nonvolatile memory location after reset of the IC. If nonvolatile backup of a given register is not enabled,  
that location initializes to a default value after reset instead. See the individual register descriptions for details. Table 70  
shows the nNVCfg2 register format.  
Table 70. nNVCfg2 Register (1BAh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4 D3 D2 D1 D0  
FibMax FibScl  
enT  
0
enMMT  
enMMV  
enMMC  
enVT  
enFC  
0
enMet  
0
enFL  
FibMax/FibScl: Set the FibMax and FibScl "Fibonacci Saving" interval to provide recurring log-saving according to the  
expected battery lifespan. See the 100 Record Life Logging section for more details.  
enFL: Fault Logging. Set EnFL to store protector faults into nFaultLog.LowByte as shown in Table 46. EnFL is not  
compatible with Age Forecasting. nFaultLog can be used as general-purpose memory if not used for fault logging or age  
forecasting.  
enFC: Enable FullCap and FullCapRep backup and restore. Set this bit to enable FullCap and FullCapRep registers to  
be restored after reset by the nFullCapRep register and FullCapRep to backup to nFullCapRep. When this bit is clear  
FullCap and FullCapRep registers restore from the nFullCapNom register. nFullCapRep can then be used as general-  
purpose user memory.  
enMMC: Enable MaxMinCurr Backup. Set this bit to enable storage of MaxMinCurr register information into the  
nMaxMinCurr register during save operations. When this bit is clear nMaxMinCurr can be used as general-purpose  
memory.  
enMMV: Enable MaxMinVolt Backup. Set this bit to enable storage of MaxMinVolt register information into the  
nMaxMinVolt register during save operations. When this bit is clear nMaxMinVolt can be used as general-purpose  
memory.  
enMMT: Enable MaxMinTemp Backup. Set this bit to enable storage of MaxMinTemp register information into the  
nMaxMinTemp register during save operations. EnMMT is incompatible with nNVCFG2.enFL. When enMMT and enFL  
bits are clear, nMaxMinTemp can be used as general-purpose memory.  
enT: Enable TimerH backup and restore. Set this bit to enable TimerH register to be backed up and restored by the  
nTimerH register. When this bit is clear TimerH restores with its alternate initialization value and nTimerH can be used  
as general-purpose memory.  
enVT: Enable Voltage and Temperature backup. Set this bit to enable storage of AvgVCell and AvgTA register  
information into the nVoltTemp register during save operations. When this bit and nNVCfg0.enAF are clear nVoltTemp  
can be used as general-purpose memory. Note that enVT should not be set simultaneously with nNVCfg0.enAF  
(AgeForecasting) and nNVCfg2.enFL (Fault Logging).  
enMet: Enable metal current sensing. Setting this bit to 1 enables temperature compensation of current readings  
for allowing copper trace current sensing. See also nNVCfg1.enMtl, which enables nTCurve register operation for  
adjustment of the current sensing temperature coefficient.  
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nHibCfg Register (1BBh)  
Register Type: Special  
Factory Default Value: 0909h  
Nonvolatile Restore: None  
The nHibCfg register controls hibernate mode functionality. The IC enters hibernate mode, if the measured system  
current falls below the HibThreshold setting for longer than the HibEnterTime delay. While in hibernate mode the IC  
reduces its operating current by slowing down its task period as defined by the HibScalar setting. The IC automatically  
returns to active mode of operation if current readings go above the HibThreshold setting for longer than the HibExitTime  
delay. Table 71 shows the register format.  
Table 71. nHibCfg Register (1BBh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
EnHib  
HibEnterTime  
HibThreshold  
0
0
0
HibExitTime  
HibScalar  
0: Bit must be written 0. Do not write 1.  
HibScalar: Sets the task period while in hibernate mode based on the following equation:  
(HibScalar)  
Hibernate Mode Task Period(s) = 702ms x 2  
HibExitTime: Sets the required time period of consecutive current readings above the HibThreshold value before the IC  
exits hibernate and returns to active mode of operation.  
(HibScalar)  
Hibernate Mode Exit Time(s) = (HibExitTime + 1) x 702ms x 2  
HibThreshold: Sets the threshold level for entering or exiting hibernate mode. The threshold is calculated as a fraction  
of the full capacity of the cell using the following equation:  
(HibThreshold)  
Hibernate Mode Threshold(mA) = (FullCap(mAh)/0.8hr)/2  
HibEnterTime: Sets the time period that consecutive current readings must remain below the HibThreshold value before  
the IC enters hibernate mode as defined by the following equation. The default HibEnterTime value of 000b causes the  
IC to enter hibernate mode if all current readings are below the HibThreshold for a period of 5.625 seconds, but the IC  
could enter hibernate mode as quickly as 2.812 seconds.  
(HibEnterTime)  
(HibEnterTime + 1)  
2.812s x 2  
< Hibernate Mode Entry Time < 2.812s x 2  
EnHib: Enable Hibernate Mode. When set to 1, the IC enters hibernate mode if conditions are met. When set to 0, the  
IC always remains in active mode of operation.  
nFilterCfg Register (19Dh)  
Register Type: Special  
Nonvolatile Restore: FilterCfg (029h) if nNVCfg0.enFCfg is set.  
Alternate Initial Value: 0EA4h  
The nFilterCfg register sets the averaging time period for all ADC readings, for mixing OCV results, and coulomb count  
results. It is recommended that these values are not changed unless absolutely required by the application. Table 72  
shows the nFilterCfg register format.  
Table 72. FilterCfg (029h)/nFilterCfg (19Dh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
0
0
TEMP  
MIX  
VOLT  
CURR  
CURR: Sets the time constant for the AvgCurrent register. The default POR value of 0100b gives a time constant of  
5.625s. The equation setting the period is:  
(CURR-7)  
AvgCurrent time constant = 45s x 2  
VOLT: Sets the time constant for the AvgVCell register. The default POR value of 010b gives a time constant of 45.0s.  
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The equation setting the period is:  
(VOLT-2)  
AvgVCell time constant = 45s x 2  
MIX: Sets the time constant for the mixing algorithm. The default POR value of 1101b gives a time constant of 12.8  
hours. The equation setting the period is:  
(MIX-3)  
Mixing Period = 45s x 2  
TEMP: Sets the time constant for the AvgTA register. The default POR value of 0001b gives a time constant of 1.5  
minutes. The equation setting the period is:  
TEMP  
AvgTA time constant = 45s x 2  
0: Write these bits to 0.  
nMiscCfg Register (1B2h)  
Register Type: Special  
Nonvolatile Restore: MiscCfg (00Fh) if nNVCfg0.enMC is set  
Alternate Initial Value: 0x3070  
The nMiscCfg control register enables various other functions of the device. The nMiscCfg register default values should  
not be changed unless specifically required by the application. Table 73 shows the register format.  
Table 73. MiscCfg (00Fh)/nMiscCfg (1B2h) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
FUS  
0
0
MR  
1
0
0
SACFG  
0: Bit must be written 0. Do not write 1.  
1: Bit must be written 1. Do not write 0.  
SACFG: SOC Alert Config. SOC Alerts can be generated by monitoring any of the SOC registers as follows. SACFG  
defaults to 00 at power-up:  
● 00: SOC Alerts are generated based on the RepSOC register.  
● 01: SOC Alerts are generated based on the AvSOC register.  
● 10: SOC Alerts are generated based on the MixSOC register.  
● 11: SOC Alerts are generated based on the VFSOC register.  
MR: Mixing Rate. This value sets the strength of the servo mixing rate after the final mixing state has been reached  
(> 2.08 complete cycles). The units are MR0 = 6.25μV, giving a range up to 19.375mA with a standard 0.010Ω sense  
resistor. Setting this value to 00000b disables servo mixing and the IC continues with time-constant mixing indefinitely.  
The default setting is 18.75μV or 1.875mA with a standard sense resistor.  
FUS: Full Update Slope. This field prevents jumps in the RepSOC and FullCapRep registers by setting the rate of  
adjustment of FullCapRep near the end of a charge cycle. The update slope adjustment range is from 2% per 15 minutes  
(0000b) to a maximum of 32% per 15 minutes (1111b).  
nRelaxCfg Register (1B6h)  
Register Type: Special  
Nonvolatile Restore: RelaxCfg (0A0h) if nNVCfg0.enRCfg is set.  
Alternate Initial Value: 0x2039  
The nRelaxCfg register defines how the IC detects if the cell is in a relaxed state. See Figure 27. For a cell to be  
considered relaxed, current flow through the cell must be kept at a minimum while the change in the cell’s voltage over  
time, dV/dt, shows little or no change. If AvgCurrent remains below the LOAD threshold while VCell changes less than the  
dV threshold over two consecutive periods of dt, the cell is considered relaxed. Table 74 shows the nRelaxCfg register  
format.  
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Table 74. RelaxCfg (0A0h)/nRelaxCfg (1B6h) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
LOAD  
dV  
dt  
LOAD: Sets the threshold, which the AvgCurrent register is compared against. The AvgCurrent register must remain  
below this threshold value for the cell to be considered unloaded. Load is an unsigned 7-bit value where 1 LSb = 50μV.  
The default value is 800μV.  
dV: Sets the threshold, which VCell is compared against. If the cell’s voltage changes by less than dV over two  
consecutive periods set by dt, the cell is considered relaxed; dV has a range of 0 to 40mV where 1 LSb = 1.25mV. The  
default value is 3.75mV.  
dt: Sets the time period over which change in VCell is compared against dV. If the cell’s voltage changes by less than dV  
over two consecutive periods set by dt, the cell is considered relaxed. The default value is 1.5 minutes. The comparison  
period is calculated as:  
(dt-8)  
Relaxation period = 2  
x 45s  
0
RELAXATION LOAD THRESHOLD  
CURRENT  
DISCHARGING  
CELL UNLOADED  
(RELAXATION BEGINS)  
dV 6  
dV 5  
dV 4  
CELL  
dV 3  
VOLTAGE  
dV 2  
48-96  
MINUTES  
dt 1  
dt 2  
dt 3  
dt 4  
dt 5  
dt 6  
Figure 27. Cell Relaxation Detection  
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nLearnCfg Register (19Fh)  
Register Type: Special  
Nonvolatile Restore: LearnCfg (0A1h) if nNVCfg0.enLCfg is set  
Alternate Initial Value: 0x4686  
The nLearnCfg register controls all functions relating to adaptation during operation. Table 75 shows the register format:  
Table 75. LearnCfg (0A1h)/nLearnCfg (19Fh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
0
1
0
0
0
1
1
0
1
LS  
0
1
1
0
0: Bit must be written 0. Do not write 1.  
1: Bit must be written 1. Do not write 0.  
LS: Learn Stage. The Learn Stage value controls the influence of the voltage fuel gauge on the mixing algorithm. Learn  
Stage defaults to 0h, making the voltage fuel gauge dominate. Learn Stage then advances to 7h over the course of two  
full cell cycles to make the coulomb counter dominate. Host software can write the Learn Stage value to 7h to advance  
to the final stage at any time. Writing any value between 1h and 6h is ignored.  
nTTFCfg Register (1C7h)/CVMixCap (0B6h) and CVHalfTime (0B7h) Registers  
Register Type: Special  
Nonvolatile Restore: CVHalfTime (0B7h) and CVMixCapRatio (0B6h) if nNVCfg1.enTTF is set.  
Alternate Initial Value: CVHalfTime = 0xA00 (30 minutes) and CVMixCap = 75% x FullCapNom.  
The nTTFCfg register configures parameters related to the time-to-full (TTF) calculation. If nNVCfg1.enTTF is set,  
CVHalfTime (0B7h) and CVMixCapRatio (0B6h) are refreshed from the nTTFCfg Register.  
CVHalfTime (0B7h) is defined as the amount of time in the constant voltage portion of the charge cycle for the current to  
taper to half of the charging current in the constant current portion of the charge cycle. See Figure 28. CVHalfTime has  
an LSB of 0.0001953125 hours.  
CVMixCapRatio (0B6h) is defined as the approximate state of charge where the charge transitions from the constant  
current portion of the charge cycle to the constant voltage portion of the charge current. See Figure 28. CVMixCapRatio  
has an LSB of 0.5mAh.  
The Alternate Initial Value indicates that the charge cycle transitions from constant current to constant voltage when the  
SOC is 75% and that it then takes 30 minutes for the current to taper half of the charging current.  
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CHARGING CURRENT  
CURRENT  
READING  
CHARGING CURRENT / 2  
HALFTIME  
CONSTANT  
CURRENT  
CHARGE  
CONSTANT  
VOLTAGE  
CHARGE  
FULLCAPNOM  
PACK  
CAPACITY  
MIXCAP  
MIXCAPRATIO =  
MIXCAP/FULLCAPNOM  
Figure 28. TTF Configuration Diagram  
The nTTFCfg parameters can be tuned for best TTF performance during characterization by Maxim. Table 76 shows the  
register format.  
Table 76. nTTFCfg Register (1C7h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
nCVHalfTime  
nCVMixCapRatio  
nCVHalfTime: nCVHalfTime has an LSB of 45 seconds giving a full scale range of 0 seconds to 192 minutes.  
nCVHalfTime = CVHalfTime(s)/45 seconds  
nCVMixCapRatio: nCVMixCapRatio has an LSB of 1/256 giving a full scale range of 0 to 0.9961.  
nCVMixCapRatio = CVMixCapRatio(%) × 256  
For example, for a nCVHalftime of 37.5 minutes (2250 seconds) and a nCVMixRatio of 59%, the value for nTTFCfg =  
3297h. These values are calculated as follows:  
nCVHalfTime = 2250s/45 = 50dec = 32h  
nCVMixCapRatio = 59% x 256 = 151dec = 97h  
nConvgCfg Register (1B7h)  
Register Type: Special  
Factory Default Value: 2241h  
Nonvolatile Restore: There is no associated restore location for this register.  
The nConvgCfg register configures operation of the converge-to-empty feature. Table 77 shows the nConvgCfg register  
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format. The nNVCfg1.CTE bit must be set to enable converge-to-empty functionality. If nNVCfg1.CTE is clear, this  
register can be used as general-purpose data storage.  
Table 77. nConvgCfg Register (1B7h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
RepLow  
VoltLowOff  
MinSlopeX  
RepL_per_stage  
RepL_per_stage: Adjusts the RepLow threshold setting depending on the present learn stage using the following  
equation. This allows the RepLow threshold to be at higher levels for earlier learn states. RepL_per_stage has an LSb of  
1% giving a range of 0% to 7%.  
RepLow Threshold = RepLow Field Setting + RemainingStages x RepL_per_stage  
MinSlopeX: Sets the amount of slope shallowing which occurs when RepSOC falls below RepLow. MinSlopeX LSb  
corresponds to a ratio of 1/16 giving a full range of 0 to 15/16.  
VoltLowOff: When the AvgVCell register value drops below the VoltLow threshold, RepCap begins to bend downwards  
by a ratio defined by the following equation. VoltLowOff has an LSb of 20mV giving a range of 0 to 620mV.  
(AvgVCell - VEmpty)/VoltLowOff  
RepLow: Sets the threshold below which RepCap begins to bend upwards. The RepLow field LSb is 2% giving a full  
scale range from 0% to 30%.  
nRippleCfg Register (1B1h)  
Register Type: Special  
Factory Default Value: 0204h  
Nonvolatile Restore: There is no associated restore location for this register.  
The nRippleCfg register configures ripple measurement and ripple compensation. The recommended value for this  
register is 0x0204. Table 78 shows the register format.  
Table 78. nRippleCfg Register (1B1h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
kDV  
NR  
NR: Sets the filter magnitude for ripple observation as defined by the following equation giving a range of 1.4 seconds to  
180 seconds.  
NR  
Ripple Time Range = 1.4 seconds x 2  
kDV: Sets the corresponding amount of capacity to compensate proportional to the ripple.  
SOCHold Register (0D0h)  
Register Type: Special  
The SOCHold register configures operation of the hold before empty feature and also the enable bit for 99% hold during  
charge. The default value for SOCHold is 1002h. Table 79 shows the SOCHold register format.  
Table 79. SOCHold (0D0h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
0
0
0
99%HoldEn  
EmptyVoltHold  
EmptySocHold  
EmptyVoltHold: The positive voltage offset that is added to VEmpty. At VCell = VEmpty + EmptyVoltHold point, the  
empty detection/learning is occured. EmptyVoltHold has an LSb of 10mV giving a range of 0 to 1270mV.  
EmptySocHold: It is the RepSOC at which RepSOC is held constant. After empty detection/learning occurs, RepSOC  
update continues as expected. EmptySocHold has an LSb of 0.5%, giving it a full range of 0 to 15.5%.  
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99%HoldEn: Enable bit for 99% hold feature during charging. When enabled, RepSOC holds a maximum value of 99%  
until Full Qualified is reached.  
ModelGauge m5 Algorithm Additional Registers  
The following registers contain intermediate ModelGauge m5 data which may be useful for debugging or performance  
analysis. The values in these registers are reset to their initial values 480ms after the IC is reset.  
QResidual Register (00Ch)  
Register Type: Capacity  
Nonvolatile Backup: None  
The QResidual register displays the calculated amount of charge in mAh that is presently inside of, but cannot be  
removed from the cell under present application conditions. This value is subtracted from the MixCap value to determine  
the capacity available to the user under present conditions (AvCap).  
VFSOC Register (0FFh)  
Register Type: Percentage  
Nonvolatile Backup: None  
The VFSOC register holds the calculated present state-of-charge of the battery according to the voltage fuel gauge.  
VFOCV Register (0FBh)  
Register Type: Voltage  
Nonvolatile Backup: None  
The VFOCV register contains the calculated open-circuit voltage of the cell as determined by the voltage fuel gauge. This  
value is used in other internal calculations.  
QH Register (4Dh)  
Register Type: Capacity  
Nonvolatile Backup: None  
Alternate Initial Value: 0x0000  
The QH register displays the raw coulomb count generated by the device. This register is used internally as an input to  
the mixing algorithm. Monitoring changes in QH over time can be useful for debugging device operation.  
AvCap Register (01Fh)  
Register Type: Capacity  
Nonvolatile Backup: None  
The AvCap register holds the calculated available capacity of the cell pack based on all inputs from the ModelGauge m5  
algorithm including empty compensation. The register value is an unfiltered calculation. Jumps in the reported value can  
be caused by changes in the application such as abrupt changes in load current or temperature. See the Fuel-Gauge  
Empty Compensation section for details.  
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AvSOC Register (00Eh)  
Register Type: Percentage  
Nonvolatile Backup: None  
The AvSOC register holds the calculated available state of charge of the cell based on all inputs from the ModelGauge  
m5 algorithm including empty compensation. The AvSOC percentage corresponds with AvCap and FullCapNom. The  
AvSOC register value is an unfiltered calculation. Jumps in the reported value can be caused by changes in the  
application such as abrupt changes in load current or temperature. See the Fuel-Gauge Empty Compensation section for  
details.  
MixSOC Register (00Dh)  
Register Type: Percentage  
Nonvolatile Backup: None  
The MixSOC register holds the calculated present state-of-charge of the cell before any empty compensation  
adjustments are performed. MixSOC corresponds with MixCap and FullCapNom. See the Fuel-Gauge Empty  
Compensation section for details.  
MixCap Register (02Bh)  
Register Type: Capacity  
Nonvolatile Backup: None  
The MixCap register holds the calculated remaining capacity of the cell before any empty compensation adjustments are  
performed. See the Fuel-Gauge Empty Compensation section for details.  
VFRemCap Register (04Ah)  
Register Type: Capacity  
Nonvolatile Backup: None  
The VFRemCap register holds the remaining capacity of the cell as determined by the voltage fuel gauge before any  
empty compensation adjustments are performed. See the Fuel-Gauge Empty Compensation section for details.  
FStat Register (03Dh)  
Register Type: Special  
Nonvolatile Backup: None  
The FStat register is a read-only register that monitors the status of the ModelGauge algorithm. Do not write to this  
register location. Table 80 is the FStat register format.  
Table 80. FStat Register (03Dh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
X
X
X
X
X
X
RelDt  
EDet  
X
RelDt2  
X
X
X
X
X
DNR  
DNR: Data Not Ready. This bit is set to 1 at cell insertion and remains set until the output registers have been updated.  
Afterwards, the IC clears this bit indicating the fuel gauge calculations are now up to date. This takes between 445ms  
and 1.845s depending on whether the IC was in a powered state prior to the cell-insertion event.  
RelDt2: Long Relaxation. This bit is set to 1 whenever the ModelGauge m5 algorithm detects that the cell has been  
relaxed for a period of 48 to 96 minutes or longer. This bit is cleared to 0 whenever the cell is no longer in a relaxed state.  
See Figure 31.  
EDet: Empty Detection. This bit is set to 1 when the IC detects that the cell empty point has been reached. This bit is  
reset to 0 when the cell voltage rises above the recovery threshold. See the VEmpty register for details.  
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RelDt: Relaxed cell detection. This bit is set to 1 whenever the ModelGauge m5 algorithm detects that the cell is in a fully  
relaxed state. This bit is cleared to 0 whenever a current greater than the load threshold is detected. See Figure 31.  
X: Don’t Care. This bit is undefined and can be logic 0 or 1.  
Identification Registers  
The following registers contain information to identify the IC type and the specific ROM ID.  
DevName Register (021h)  
Register Type: Special  
Nonvolatile Backup: None  
The DevName register holds device type and firmware revision information. This allows the host software to easily  
identify the type of IC being communicated to. Table 81 shows the DevName register format.  
Table 81. DevName Register (021h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
Revision  
Device  
The DevName for the IC is 0x4209.  
nROMID0 (1BCh)/nROMID1 (1BDh)/nROMID2 (1BEh)/nROMID3 (1BFh) Registers  
Register Type: Special  
Nonvolatile Restore: There are no associated restore locations for these registers  
Each IC contains a unique 64-bit identification value that is contained in the nROMID registers. Note this is the same ID  
that can be read using the 1-Wire ROM ID commands. The unique ID can be reconstructed from the nROMID registers  
as shown in Table 82.  
Table 82. nROMID Registers (1BCh to 1BFh) Format  
nROMID3[15:0]  
nROMID2[15:0]  
nROMID1[15:0]  
nROMID0[15:0]  
ROM ID [15:0]  
ROM ID [63:48]  
ROM ID [47:32]  
ROM ID [31:16]  
AtRate Functionality  
The AtRate function allows the host software to see the theoretical remaining time or capacity for any given load  
current. AtRate can be used for power management by limiting system loads depending on present conditions of the  
cell pack. Whenever the AtRate register is programmed to a negative value indicating a hypothetical discharge current,  
the AtQResidual, AtTTE, AtAvSOC, and AtAvCap registers display theoretical residual capacity, time-to-empty, state-of-  
charge, and available capacity respectively. Host software should wait two full task periods (703ms minimum in active  
mode) after writing the AtRate register before reading any of the result registers.  
AtRate Register (004h)  
Register Type: Current  
Nonvolatile Backup: None  
Host software should write the AtRate register with a negative two’s-complement 16-bit value of a theoretical load current  
prior to reading any of the at-rate output registers.  
AtQResidual Register (0DCh)  
Register Type: Capacity  
Nonvolatile Backup: None  
The AtQResidual register displays the residual charge held by the cell at the theoretical load-current level entered into  
the AtRate register.  
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AtTTE Register (0DDh)  
Register Type: Time  
Nonvolatile Backup: None  
The AtTTE register can be used to estimate time-to-empty for any theoretical current load entered into the AtRate  
register. The AtTTE register displays the estimated time-to-empty for the application by dividing AtAvCap by the AtRate  
register value. The AtTTE register has a maximum value of 102.3 hours. When AtTTE is larger than the maximum value,  
the AtTTE register saturates and contains the maximum value (FFFFh). The host can calculate time values longer that  
the maximum register value with the following equation:  
AtTTE  
(hours) = AtAvCap(mAh)/AtRate(mA)  
CALCULATED  
AtAvSOC Register (0CEh)  
Register Type: Percentage  
Nonvolatile Backup: None  
The AtAvSOC register holds the theoretical state of charge of the cell based on the theoretical current load of the AtRate  
register. The register value is stored as a percentage with a resolution of 0.0039% per LSB. If a 1% resolution state-of-  
charge value is desired, the host can read only the upper byte of the register instead.  
AtAvCap Register (0DFh)  
Register Type: Capacity  
Nonvolatile Backup: None  
The AtAvCap register holds the estimated remaining capacity of the cell based on the theoretical load current value of  
the AtRate register. The value is stored in terms of µVh and must be divided by the application sense-resistor value to  
determine the remaining capacity in mAh.  
Alert Function  
The Alert Threshold registers allow interrupts to be generated by detecting a high or low voltage, current, temperature,  
state-of-charge, or protection fault. Interrupts are generated on the ALRT pin open-drain output driver. An external pullup  
is required to generate a logic-high signal. Alerts can be triggered by any of the following conditions:  
● Over/undervoltage—VAlrtTr register threshold violation (upper or lower) and alerts enabled (Aen = 1).  
● Over/undertemperature—TAlrtTr register threshold violation (upper or lower) and alerts enabled (Aen = 1).  
● Over/undercurrent—IAlrtTr register threshold violation (upper or lower) and alerts enabled (Aen = 1).  
● Over/under SOC—SAlrtTr register threshold violation (upper or lower) and alerts enabled (Aen = 1).  
● Protection Alert—ProtAlrt indicates which protection fault occured. Protection alerts enabled (Config.PAen = 1) and  
alerts enabled (Aen = 1).  
To prevent false interrupts, the threshold registers should be initialized before setting the Aen bit. Alerts generated by a  
threshold-level violation can be configured to be cleared only by software, or cleared automatically when the threshold  
level is no longer violated. Prior to clearing the Status.PA, the ProtAlrt register must be written to 0000h. See the Config  
(01Dh) register description for details of the alert function configuration.  
nVAlrtTh Register (18Ch)  
Register Type: Special  
Nonvolatile Restore: VAlrtTh (001h) if nNVCfg1.enAT is set.  
Alternate Initial Value: FF00h (Disabled)  
The nVAlrtTh register shown in Table 83 sets upper and lower limits that generate an ALRT pin interrupt if exceeded by  
any of the cell voltage readings. The upper 8 bits set the maximum value and the lower 8 bits set the minimum value.  
Interrupt threshold limits are selectable with 20mV resolution over the full operating range of the VCell register. At power-  
up, the thresholds default to their maximum settings unless they are configured to be restored from nonvolatile memory  
instead by setting the nNVCfg1.enAT bit.  
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Table 83. VAlrtTh (001h)/nVAlrtTh (18Ch) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
VMAX  
VMIN  
VMAX: Maximum voltage reading. An alert is generated if the maximum cell voltage reading exceeds this value. This  
field has 20mV LSb resolution.  
VMIN: Minimum voltage reading. An alert is generated if the VCell register reading falls below this value. This field has  
20mV LSb resolution.  
nTAlrtTh Register (18Dh)  
Register Type: Special  
Nonvolatile Restore: TAlrtTh (002h) if nNVCfg1.enAT is set.  
Alternate Initial Value: 7F80h (Disabled)  
The nTAlrtTh register shown in Table 84 sets upper and lower limits that generate an ALRT pin interrupt if exceeded by  
any thermistor reading. The upper 8 bits set the maximum value and the lower 8 bits set the minimum value. Interrupt  
threshold limits are stored in 2’s-complement format with 1ºC resolution over the full operating range of the Temp register.  
At power-up, the thresholds default to their maximum settings unless they are configured to be restored from nonvolatile  
memory instead by setting the nNVCfg1.enAT bit.  
Table 84. TAlrtTh (002h)/nTAlrtTh (18Dh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
TMAX  
TMIN  
TMAX: Maximum temperature reading. An alert is generated if any temperature channel reading exceeds this value. This  
field is signed 2's complement format with 1ºC LSb resolution.  
TMIN: Minimum temperature reading. An alert is generated if the Temp register reading falls below this value. This field  
is signed 2's complement format with 1ºC LSb resolution.  
nSAlrtTh Register (18Fh)  
Register Type: Special  
Nonvolatile Restore: SAlrtTh (003h) if nNVCfg1.enAT is set.  
Alternate Initial Value: FF00h (Disabled)  
The nSAlrtTh register shown in Table 85 sets upper and lower limits that generate an ALRT pin interrupt if exceeded  
by the selected RepSOC, AvSOC, MixSOC, or VFSOC register values. See the MiscCFG.SACFG setting for details.  
The upper 8 bits set the maximum value and the lower 8 bits set the minimum value. Interrupt threshold limits are  
selectable with 1% resolution over the full operating range of the selected SOC register. At power-up, the thresholds  
default to their maximum settings unless they are configured to be restored from nonvolatile memory instead by setting  
the nNVCfg1.enAT bit.  
Table 85. SAlrtTh (003h)/nSAlrtTh (18Fh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
SMAX  
SMIN  
SMAX: Maximum state-of-charge reading. An alert is generated if the selected SOC register reading exceeds this value.  
This field has 1% LSb resolution.  
SMIN: Minimum state-of-charge reading. An alert is generated if the selected SOC register reading falls below this value.  
This field has 1% LSb resolution.  
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nIAlrtTh Register (0ACh)  
Register Type: Special  
Nonvolatile Restore: IAlrtTh (0ACh) if nNVCfg1.enAT is set.  
Alternate Initial Value: 7F80h (Disabled)  
The nIAlrtTh register shown in Table 86 sets upper and lower limits that generate an ALRT pin interrupt if exceeded by  
the Current register value. The upper 8 bits set the maximum value and the lower 8 bits set the minimum value. Interrupt  
threshold limits are selectable with 400μV resolution over the full operating range of the Current register. At power-up, the  
thresholds default to their maximum settings unless they are configured to be restored from nonvolatile memory instead  
by setting the nNVCfg1.enAT bit.  
Table 86. IAlrtTh (0ACh)/nIAlrtTh (18Eh) Register Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
CURRMAX  
CURRMIN  
CURRMAX: Maximum Current Threshold. An alert is generated if the current register reading exceeds this value. This  
field is signed 2's complement with 400μV LSb resolution to match the upper byte of the Current register.  
CURRMIN: Minimum Current Threshold. An alert is generated if the current register reading falls below this value. This  
field is signed 2's complement with 400μV LSb resolution to match the upper byte of the Current register.  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Memory  
The memory space of the IC consists of 32 pages of 16 registers which are 16-bits wide. Registers are addressed using  
an internal 9-bit range of 000h to 1FFh. Externally, registers are accessed with an 8-bit address for 2-wire communication  
or 16-bit address for 1-Wire communication. Registers are grouped by functional block. See the functional descriptions for  
details of each register's functionality. Certain memory blocks can be permanently locked to prevent accidental overwrite.  
See the Locking Memory Blocks section for details. Table 87 shows the full memory map of the IC. Note that some  
individual user registers are located on RESERVED memory pages. These locations can be accessed normally while the  
remainder of the page is considered RESERVED. Memory locations listed as RESERVED should never be written to.  
Data read from RESERVED locations is not defined.  
Table 87. Top Level Memory Map  
2-WIRE  
REGISTER  
PAGE  
SLAVE  
ADDRESS  
2-WIRE  
PROTOCOL  
2-WIRE EXTERNAL  
ADDRESS RANGE  
1-WIRE EXTERNAL  
ADDRESS RANGE  
LOCK  
DESCRIPTION  
00h  
MODELGAUGE m5  
DATA BLOCK  
2
6Ch  
I C  
00h–4Fh  
0000h–004Fh  
01h–04h  
05h–0Ah  
LOCK2  
RESERVED  
MODELGAUGE m5  
LOCK2 DATA BLOCK  
(continued)  
2
0Bh  
0Ch  
0Dh  
6Ch  
6Ch  
6Ch  
I C  
B0h–BFh  
C0h–CFh  
D0h–DFh  
00B0h–00BFh  
00C0h–00CFh  
00D0h–00DFh  
2
SHA  
SHA MEMORY  
I C  
MODELGAUGE m5  
LOCK2 DATA BLOCK  
(continued)  
2
I C  
0Eh–0Fh  
10h–17h  
18h–19h  
RESERVED  
SBS DATA BLOCK  
16h  
SBS  
00h–7Fh  
LOCK3  
1Ah–1Bh LOCK1  
NONVOLATILE  
MEMORY  
16h  
16h  
2
1Ch  
1Dh  
1Eh  
LOCK4  
LOCK5  
LOCK1  
I C  
80h–EFh  
F0h–FFh  
0180h–01EFh  
01F0h–01FFh  
NONVOLATILE  
HISTORY  
2
1Fh  
I C  
Table 88. Individual Registers  
REGISTER  
ADDRESS  
2-WIRE SLAVE  
ADDRESS  
2-WIRE  
PROTOCOL  
2-WIRE EXTERNAL  
ADDRESS RANGE  
1-WIRE EXTERNAL  
ADDRESS RANGE  
LOCK DESCRIPTION  
Command  
Register  
2
060h  
6Ch  
I C  
60h  
0060h  
CommStat  
Register  
2
061h  
07Fh  
6Ch  
6Ch  
I C  
61h  
7Fh  
0061h  
007Fh  
2
Lock Register  
I C  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
ModelGauge m5 Memory Space  
Registers that relate to functionality of the ModelGauge m5 fuel gauge are located on pages 00h–04h and are continued  
on pages 0Bh and 0Dh. See the ModelGauge m5 Algorithm section for details of specific register operation. These  
locations (other than page 00h) can be permanently locked by setting LOCK2. Register locations shown in gray are  
reserved locations and should not be written to. See Table 89.  
Table 89. ModelGauge m5 Register Memory Map  
PAGE/  
00_h  
01_h  
02_h  
03_h  
04_h  
0A_h  
0B_h  
0D_h  
WORD  
0h  
1h  
2h  
3h  
4h  
5h  
6h  
7h  
Status  
VAlrtTh  
TAlrtTh  
SAlrtTh  
AtRate  
RepCap  
RepSOC  
Age  
FullCapRep  
TTE  
TTF  
Reserved  
Reserved  
AvgDieTemp  
Reserved  
RelaxCfg  
LearnCfg  
Status2  
Power  
SOCHold  
AvgCell4  
AvgCell3  
AvgCell2  
AvgCell1  
CELL4  
DevName  
QRTable00 QRTable10 QRTable20 QRTable30  
Reserved  
VRipple  
FullSocThr FullCapNom  
Reserved  
DieTemp  
FullCap  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
AvgPower  
Reserved  
TTFCfg  
RCell  
Reserved  
AvgTA  
Reserved  
Reserved  
Reserved  
Reserved  
MaxPeakPower  
SusPeakPower  
PackResistance  
SysResistance  
IAvgEmpty  
Reserved  
CVMixCap  
CVHalfTime  
CELL3  
Cycles  
CELL2  
Charging  
Current  
8h  
9h  
Ah  
MaxMinVolt  
MaxMinTemp  
MaxMinCurr  
DesignCap  
AvgVCell  
VCell  
Reserved  
Reserved  
VEmpty  
Reserved  
Reserved  
MinSysVoltage  
MPPCurrent  
SPPCurrent  
CGTempCo  
AgeForecast  
Reserved  
CELL1  
ProtStatus  
Batt  
FilterCfg  
Charging  
Voltage  
VFRemCap  
Bh  
Ch  
Dh  
Eh  
Fh  
Config  
QResidual  
MixSOC  
AvSOC  
Temp  
Current  
MixCap  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
Reserved  
FStat  
Reserved  
Reserved  
QH  
Config2  
IAlrtTh  
Reserved  
Reserved  
Reserved  
TimerH  
PCKP  
AtQResidual  
AtTTE  
AvgCurrent  
IChgTerm  
AvCap  
MinVolt  
MinCurr  
ProtAlrt  
Timer  
QL  
AtAvSOC  
AtAvCap  
MiscCfg  
Reserved  
Reserved  
Reserved  
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SHA-256 Authentication  
Nonvolatile Memory  
Nonvolatile Memory Map  
Certain ModelGauge m5 and device configuration values are stored in nonvolatile memory to prevent data loss if the IC  
loses power. The IC internally updates page 1Ah values over time based on actual performance of the ModelGauge m5  
algorithm. The host system does not need to access this memory space during operation. Nonvolatile data from other  
accessible register locations is internally mirrored into the nonvolatile memory block automatically. Note that nonvolatile  
memory has a limited number of writes. User accessible configuration memory is limited to 7 writes. Internal and  
external updates to page 1Ah as the fuel gauge algorithm learns is limited to 100 writes. Do not exceed these  
write limits. See Table 96 for details on configuring the logging interval. Table 90 shows the nonvolatile memory register  
map.  
Table 90. Nonvolatile Register Memory Map (slave address 16h)  
PAGE/  
1
18_h  
19_h  
1A_h  
1B_h  
1C_h  
1D_h  
1E_h  
WORD  
0h  
1h  
2h  
3h  
4h  
5h  
6h  
7h  
8h  
9h  
Ah  
Bh  
Ch  
Dh  
Eh  
Fh  
nXTable0  
nXTable1  
nXTable2  
nXTable3  
nXTable4  
nXTable5  
nXTable6  
nXTable7  
nXTable8  
nXTable9  
nOCVTable0  
nOCVTable1  
nOCVTable2  
nOCVTable3  
nOCVTable4  
nOCVTable5  
nOCVTable6  
nOCVTable7  
nOCVTable8  
nOCVTable9  
nQRTable00  
nQRTable10  
nQRTable20  
nQRTable30  
nCycles  
nConfig  
nRippleCfg  
nMiscCfg  
nDesignCap  
nSBSCfg  
nPackCfg  
nRelaxCfg  
nConvgCfg  
nNVCfg0  
nNVCfg1  
nNVCfg2  
nHibCfg  
nPReserved0  
nPReserved1  
nChgCfg  
nUVPrtTh  
nTPrtTh1  
nTPrtTh3  
nIPrtTh1  
nDPLimit  
nScOcvLim  
nAgeFcCfg  
nChgCtrl  
nDesignVoltage  
Reserved  
nRGain  
nBALTh  
nFullCapNom  
nRComp0  
nPackResistance  
nFullSOCThr  
nTTFCfg  
nTPrtTh2  
nProtMiscTh  
nProtCfg  
Reserved  
nManfctrDate  
nFirstUsed  
nTempCo  
nBattStatus  
nFullCapRep  
nVoltTemp  
nCGain  
nJEITAC  
nJEITAV  
nSerialNumber0  
nSerialNumber1  
nSerialNumber2  
nDeviceName0  
nDeviceName1  
nDeviceName2  
nDeviceName3  
nDeviceName4  
nCGTempCo  
nThermCfg  
Reserved  
nXTable10 nOCVTable10  
nXTable11 nOCVTable11  
nOVPrtTh  
nStepChg  
nDelayCfg  
nODSCTh  
nODSCCfg  
nProtCfg2  
nMaxMinCurr  
nMaxMinVolt  
nMaxMinTemp  
2
nVAlrtTh  
nTAlrtTh  
nIAlrtTh  
nSAlrtTh  
nIChgTerm  
nFilterCfg  
nVEmpty  
nROMID0  
nManfctrName0  
nManfctrName1  
nManfctrName2  
nRSense  
2
nROMID1  
2
nFaultLog/ nFullCapFlt nROMID2  
2
nLearnCfg  
nTimerH  
nROMID3  
1. Locations 1A0h to 1AFh are updated automatically by the IC each time it learns.  
2. The ROM ID is unique to each IC and cannot be changed by the user.  
Shadow RAM  
Nonvolatile memory is never written to or read from directly by the communication interface. Instead, data is written to  
or read from shadow RAM memory located at the same address. Copy and recall commands are used to transfer data  
between the nonvolatile memory and the shadow RAM. Figure 29 describes this relationship. Nonvolatile memory recall  
occurs automatically at IC power-up and software POR.  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Shadow RAM and Nonvolatile Memory Relationship  
SHADOW RAM  
0180h  
NONVOLATILE MEMORY  
0180h  
DATA WRITE  
COPY NV BLOCK  
NV RECALL  
DATA READ  
01EFh  
01EFh  
Figure 29. Shadow RAM and Nonvolatile Memory Relationship  
Nonvolatile Memory Commands  
The following commands are used to copy or recall data from the nonvolatile memory. All commands are written to the  
Command register at memory address 060h to perform the desired operation. The CommStat register can be used to  
track the status of the request.  
COPY NV BLOCK [E904h]  
This command copies the entire block from shadow RAM to nonvolatile memory addresses 180h to 1EFh excluding  
the unique ID locations of 1BCh to 1BFh. After issuing this command, the host must wait t  
for the operation to  
BLOCK  
complete. The configuration memory can be copied a maximum of seven times. Note that the supply voltage must be  
above V for the operation to complete successfully.  
NVM  
NV RECALL [E001h]  
This command recalls the entire block from nonvolatile memory to Shadow RAM addresses 180h to 1EFh. This is a  
low-power operation that takes up to t  
operation to complete successfully.  
to complete. Note that the supply voltage must be above V  
for the  
NVM  
RECALL  
HISTORY RECALL [E2XXh]  
This command copies history data into page 1Fh of the memory. After issuing this command, the host must wait t  
RECALL  
for the operation to complete before reading page 1Fh. Table 91 shows the history information that can be recalled.  
See the SHA-256, Battery Life Logging, and Determining Number of Remaining Updates sections for details on how to  
decode this information.  
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Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Table 91. History Recall Command Functions  
COMMAND  
FUNCTION  
0xE29D  
Recall indicator flags to determine remaining SHA-256 secret updates or clears  
Recall indicator flags to determine remaining configuration memory writes  
Recall indicator flags to determine remaining Battery Life Logging updates  
Recall indicator flags to determine Battery Life Logging update errors  
Recall Battery Life Logging information  
0xE29B  
0xE29C  
0xE29C, 0xE29D  
0xE22E to 0xE291  
Nonvolatile Block Programming  
The host must program all nonvolatile memory locations at the same time by using the Copy NV Block command.  
After clearing the write protection bits, the host writes all desired nonvolatile memory Shadow RAM locations to their  
desired values, then sends the Copy NV Block command, and then waits t  
for the copy to complete. The  
BLOCK  
CommStat.NVError bit should be read to determine if the copy command executed successfully. Afterwards, the host  
should send the power-on-reset sequence to reset the IC and have the new nonvolatile settings take effect. Note that the  
configuration memory is limited to n  
total write attempts. The recommended full sequence is as follows:  
BLOCK  
1. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
2. Write desired memory locations to new values.  
3. Write 0x0000 to the CommStat register (0x61) one more time to clear CommStat.NVError bit.  
4. Write 0xE904 to the Command register 0x060 to initiate a block copy.  
5. Wait t  
for the copy to complete.  
BLOCK  
6. Check the CommStat.NVError bit. If set, repeat the process. If clear, continue.  
7. Write 0x000F to the Command register 0x060 to send the full reset command to the IC.  
8. Wait 10ms for the IC to reset. Write protection resets after the full reset command.  
9. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
10. Write 0x8000 to the Config2 register 0x0AB to reset firmware.  
11. Wait for the POR_CMD bit (bit 15) of the Config2 register to be cleared to indicate that the POR sequence is  
complete.  
12. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
Determining Number of Remaining Updates  
The configuration memory can only be updated seven times by the user (first update occurs during the manufacturing  
test). The number of remaining updates can be calculated using the following procedure:  
1. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
2. Write 0xE29B to the Command register (060h).  
3. Wait t  
.
RECALL  
4. Read memory address 1FDh.  
5. Decode address 1FDh data as shown in Table 92. Each block write has redundant indicator flags for reliability.  
Logically OR the upper and lower bytes together then count the number of 1s to determine how many updates have  
already been used. The first update occurs in the manufacturing test prior to shipping to the user.  
6. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
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2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Table 92. Number of Remaining Config Memory Updates  
ADDRESS 1FDH  
DATA  
LOGICAL OR OF UPPER AND LOWER  
BYTES  
NUMBER OF UPDATES  
USED  
NUMBER OF UPDATES  
REMAINING  
0000000x00000001b  
or  
00000001b  
00000011b  
00000111b  
00001111b  
00011111b  
00111111b  
01111111b  
11111111b  
1
2
3
4
5
6
7
8
7
6
5
4
3
2
1
0
000000010000000xb  
000000xx0000001xb  
or  
0000001x000000xxb  
00000xxx000001xxb  
or  
000001xx00000xxxb  
0000xxxx00001xxxb  
or  
00001xxx0000xxxxb  
000xxxxx0001xxxxb  
or  
0001xxxx000xxxxxb  
00xxxxxx001xxxxxb  
or  
001xxxxx00xxxxxxb  
0xxxxxxx01xxxxxxb  
or  
01xxxxxx0xxxxxxxb  
xxxxxxxx1xxxxxxxb  
or  
1xxxxxxxxxxxxxxxb  
Enabling and Freeing Nonvolatile vs. Defaults  
There are seven nonvolatile memory words labeled nUser that are dedicated to general-purpose user data storage. Most  
other nonvolatile memory locations can also be used as general-purpose storage if their normal function is disabled. The  
nNVCfg0, nNVCfg1, and nNVCfg2 registers control which nonvolatile memory functions are enabled and disabled. Table  
94 shows how to free up the specific registers for user data storage. Table 95 shows which nNVCfg bits control different  
IC functions and the effects when the bit is set or cleared. See the nNVCfg register descriptions for complete details. Do  
not convert a nonvolatile register to general-purpose memory space if that register's function is used by the application.  
Table 93 is a summary of how many bytes can be made available for user memory and the functional trade-off to free up  
those bytes.  
Table 93. Total Bytes Freeable for User Memory  
BYTES  
DESCRIPTION  
FREEABLE  
164  
132  
84  
Maximum freeable when protector is disabled and EZ Model is used.  
When using protector and EZ Model.  
When using protector and custom model.  
66  
When using protector, custom model, and half of the miscellaneous configuration options.  
When using protector, custom model, and all of the miscellaneous configuration options.  
When using protector, custom model, all of the miscellaneous configuration options, and alerts.  
48  
40  
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Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Table 93. Total Bytes Freeable for User Memory (continued)  
BYTES  
DESCRIPTION  
FREEABLE  
When using protector, custom model, all of the miscellaneous configuration options, alerts, and backup  
enabled.  
28  
28  
Always free when SBS mode is not enabled.  
Table 94. Making Nonvolatile Memory Available for User Data  
RELATED  
FEATURE  
FREE BY  
BYTES  
REGISTERS  
ADDRESS  
COMMENTS  
Disable SBS and  
DS features  
nNVCfg0.enSBS words  
= 0 30  
nNVCfg1.enDS = bytes  
0
nManfctrName[0:2]  
nDesignVoltage  
nManfctrDate  
nFirstUsed  
nSerialNumber[0:2]  
nDeviceName[0:4]  
15  
1CCh–CEh,  
1E3h,  
1E6h–1EFh  
SBS NVM  
Generally freeable.  
Time-to-Full  
Configurability = 0  
nNVCfg1.enTTF 1 word  
Free if default nTTFCfg is  
acceptable.  
nTTFCfg  
nDPLimit  
1C7h  
1E0h  
2 bytes  
nNVCfg0.enDP = 1 word  
2 bytes  
Dynamic  
Power  
MAJOR  
FEATURE  
CHOICES  
Free if feature is not used.  
0
Free if feature is not used.  
Has additional implications  
with nVoltTemp.  
Age  
Forecasting  
nNVCfg0.enAF = 1 word  
0 2 bytes  
nAgeFcCfg  
nScOcvLim  
1E2h  
1E1h  
nNVCfg1.enSC = 1 word  
LiFePO  
Free if feature is not used.  
4
0
2 bytes  
JEITA Charge  
Voltage/  
Current vs.  
Temp  
Free if feature is not used.  
Note that nJEITAV and  
nOVPrtTh are still required  
for protector functionality.  
nNVCfg0.enJ = 0  
2
nJEITAC  
nStepChg  
1D8h,  
1DBh  
nNVCfg0.enJP = words  
4 bytes  
0
Freeable when original full-  
capacity is not required to  
be remembered as  
Design Cap + nNVCfg0.enDC  
1 word nDesignCap  
2 bytes (else nFullCapRep)  
1B3h  
FullCapRep  
= 0  
FullCapRep ages.  
Relaxation  
Configuration = 0  
nNVCfg0.enRCfg  
nRelaxCfg  
1B6h  
1B2h  
Miscellaneous nNVCfg0.enMC  
Configuration = 0  
nMiscCfg  
Converge-to-  
Empty Non-  
Default  
6
MODELLING/  
CHARACTER-  
IZATION  
CONFIGURATION  
OPTIONS  
nNVCfg1.enCTE words  
Normally freeable. Defaults  
work for most applications.  
nConvgCfg  
12  
1B7h  
= 0  
Configuration  
bytes  
Full Detection nNVCfg1.enFTh  
% Threshold  
nFullSOCTh  
1C6h  
19Dh  
19Fh  
= 0  
Filter  
Configuration  
nNVCfg0.enFC =  
0
nFilterCfg  
1 word  
Freeable depending on  
modelling/characterization.  
nLearnCfg  
nNVCfg0.en = 0  
nLearnCfg  
2 bytes  
Free if targeting the fuel  
gauge to default 3.3V  
empty voltage.  
Empty  
Voltage  
nNVCfg0.enVE = 1 word  
0 2 bytes  
nVEmpty  
19Eh  
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Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Table 94. Making Nonvolatile Memory Available for User Data (continued)  
RELATED  
FEATURE  
FREE BY  
BYTES  
REGISTERS  
ADDRESS  
COMMENTS  
Charge  
Termination  
nNVCfg0.enICT  
= 0  
1 word  
2 bytes  
nIChgTerm  
19Ch  
12  
words  
24  
bytes  
SOC Table  
OCV Table  
nXTable[0:11]  
180h–18Bh With custom models/  
characterization, this is not  
freeable.  
Use m5 EZ  
model by setting  
nNVCfg.enOCV  
= 0  
12  
words  
24  
nNVCfg.enX = 0  
nCVTable[0:11]  
190h–19Bh  
bytes  
nVAlrtTh  
nTAlrtTh  
nIAlrtTh  
nSAlrtTh  
4
Alert Startup  
Configuration  
nNVCfg1.enAT =  
0
words  
8 bytes  
18Ch–18Fh  
nUVPrtTh,  
nTPrtTh1  
nTPrtTh3, nIPrtTh1  
nVPrtTh2,  
nTPrtTh2  
nProtMisTh  
nProtCfg, nJEITAV  
nOVPrtTh,  
nDelayCfg  
nODSCTh,  
nODSCCfg  
Most applications of the  
MAX17320 use the  
protector. However, if the  
protector is entirely  
OTHER  
nNVCfg1.enProt 15  
= 0  
words  
Protector  
1D0h–1DFh disabled, these 32 bytes  
become free NVM. The  
FET drivers and protection  
do not work in this  
nNVCfg1.enJP = 30  
0
bytes  
configuration.  
(below if JEITA  
also off) nJEITAC,  
nStepChg  
Table 95. Nonvolatile Memory Configuration Options  
FUNCTION WHEN  
CONTROL BIT(S)  
CLEARED  
REGISTER  
NAME  
FACTORY  
DEFAULT  
CONTROL  
BIT(S)  
FUNCTION WHEN  
CONTROL BIT IS SET  
ADDRESS  
1
nXTable0  
through  
nXTable11  
Becomes Free ,  
180h–18Bh Hold Custom Cell  
Model Information  
180h–18Bh  
All 0x0000  
nNVCfg0.enX  
nNVCfg1.enAT  
IC Uses Default EZ Cell  
Model  
18Ch  
18Dh  
18Eh  
18Fh  
nVAlrtTh  
nTAlrtTh  
nIAlrtTh  
nSAlrtTh  
0x0000  
0x0000  
0x0000  
0x0000  
1
VAlrtTh, TAlrtTh,  
IAlrtTh, SAlrtTh  
initialize from nVAlrtTh, nTAlrtTh,  
nIAlrtTh, nSAlrtTh  
Becomes Free ,  
VAlrtTh, TAlrtTh, IAlrtTh,  
SAlrtTh → Disabled  
Threshold Values  
1
nOCVTable0  
through  
nOCVTable11  
Becomes Free ,  
190h–19Bh Hold Custom Cell  
Model Information  
190h–19Bh  
All 0x0000 nNVCfg0.enOCV  
IC Uses Default EZ Cell  
Model  
1
Becomes Free ,  
19Ch  
19Dh  
nIChgTerm  
nFilterCfg  
0x0000  
0x0000  
nNVCfg0.enICT  
nNVCfg0.enFCfg  
nIChgTerm→ IChgTerm  
nFilterCfg→ FilterCfg  
IChgTerm = FullCapRep/3  
1
Becomes Free ,  
FilterCfg = 0x0EA4  
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Table 95. Nonvolatile Memory Configuration Options (continued)  
FUNCTION WHEN  
CONTROL BIT(S)  
CLEARED  
REGISTER  
NAME  
FACTORY  
DEFAULT  
CONTROL  
BIT(S)  
FUNCTION WHEN  
CONTROL BIT IS SET  
ADDRESS  
1
Becomes Free ,  
19Eh  
19Fh  
nVEmpty  
0x0000  
0x0000  
nNVCfg0.enVE  
nVEmpty→ VEmpty  
VEmpty = 0xA561  
1
Becomes Free ,  
nLearnCfg  
nNVCfg0.enLCfg  
nLearnCfg→ LearnCfg  
LearnCfg = 0x2687  
1A0h  
1A1h  
1A2h  
nQRTable00  
nQRTable10  
nQRTable20  
0x1050  
0x8002  
0x078C  
Always QRTable Information  
nQRTable00→ QRTable00  
nQRTable10→ QRTable10  
nQRTable20→ QRTable20  
nQRTable30→ QRTable30  
Always nCycles→ Cycles  
1A3h  
nQRTable30  
0x0880  
N/A  
1A4h  
1A5h  
1A6h  
1A7h  
nCycles  
nFullCapNom  
nRComp0  
0x0000  
0x0D48  
0x08CC  
0x223E  
Always nFullCapNom→ FullCapNom  
Always nRComp0→ RComp0  
Always nTempCo→ TempCo  
nTempCo  
nNVCfg1.enProt  
nProtCfg.PFen  
Logs/Saves Permanent Failure  
1
1
1A8h  
1A9h  
nBattStatus  
0x0000  
0x0D48  
Becomes Free  
Becomes Free  
Status  
nFullCapRep  
nNVCfg2.enFC  
nFullCapRep→ FullCapRep  
nFullCapNom→ FullCapRep  
1
nNVCfg2.enVT  
AvgVCell→ nVoltTemp and  
AvgTA→ nVoltTemp at each  
backup event  
Becomes Free ,  
Voltage, Temperature  
Logging Disabled  
(nNVCfg0.enAF  
= 0)  
1AAh  
nVoltTemp  
0x0000  
nNVCfg0.enAF  
1
nVoltTemp stores Age  
Forecasting Information  
Becomes Free ,  
(nNVCfg2.enVT  
= 0)  
Age Forecasting Disabled  
MaxMinCurr→ nMaxMinCurr at  
each backup event  
1
1ABh  
1ACh  
1ADh  
nMaxMinCurr  
nMaxMinVolt  
nMaxMinTemp  
0x0000  
0x0000  
0x0000  
nNVCfg2.enMMC  
nNVCfg2.enMMV  
nNVCfg2.enMMT  
Becomes Free  
MaxMinVolt→ nMaxMinVolt at  
each backup event  
1
Becomes Free ,  
MaxMinTemp→ nMaxMinTemp  
at each backup event  
1
Becomes Free ,  
1
nFullCapFlt stores Age  
Forecasting backup or stores  
FaultLog information  
Becomes Free ,  
nFaultLog/  
nFullCapFlt  
nNVCfg0.enAF  
nNVCfg2.enFL  
1AEh  
0x0000  
Age Forecasting and Fault  
Logging Disabled  
TimerH→ nTimerH at each  
backup event  
1
1AFh  
1B0h  
nTimerH  
nConfig  
0x0000  
0x2290  
nNVCfg2.enT  
N/A  
Becomes Free ,  
nConfig→ Config  
nConfig→ Config2  
1
Never Free  
1B1h  
1B2h  
nRippleCfg  
nMiscCfg  
0x0204  
0x0000  
N/A  
Always nRippleCfg→ RippleCfg  
1
Becomes Free ,  
nNVCfg0.enMC  
nMiscCfg→ MiscCfg  
MiscCfg = 0x3870  
1
nDesignCap→  
DesignCap  
Become Free ,  
1B3h  
nDesignCap  
0x0000  
nNVCfg0.enDC  
FullCapRep→ DesignCap  
1
1B4h  
1B5h  
nSBSCfg  
nPackCfg  
0x0008  
0x0004  
nNVCfg0.enSBS  
N/A  
SBS Functions Enabled  
Never Free  
Always nPackCfg→ PackCfg  
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Table 95. Nonvolatile Memory Configuration Options (continued)  
FUNCTION WHEN  
CONTROL BIT(S)  
CLEARED  
REGISTER  
NAME  
FACTORY  
DEFAULT  
CONTROL  
BIT(S)  
FUNCTION WHEN  
CONTROL BIT IS SET  
ADDRESS  
1
Becomes Free ,  
1B6h  
nRelaxCfg  
nConvgCfg  
0x083B  
0x2241  
nNVCfg0.enRCfg  
nNVCfg1.enCTE  
nRelaxCfg→ RelaxCfg  
RelaxCfg = 0x2039,  
1
Becomes Free ,  
1B7h  
Converge-to-Empty Enabled  
Converge-to-Empty  
Disabled  
1B8h  
1B9h  
1BAh  
1BBh  
1BCh  
1BDh  
1BEh  
1BFh  
1C0h  
1C1h  
1C2h  
1C3h  
1C4h  
1C5h  
nNVCfg0  
nNVCfg1  
0x0A00  
0x0182  
0xBE0A  
0x0909  
Varies  
N/A  
Always Required Nonvolatile Memory Control Registers  
nHibCfg Always Applies, Not Optional  
nNVCfg2  
nHibCfg  
nROMID0  
nROMID1  
nROMID2  
nROMID3  
nPReserved0  
nPReserved1  
nChgCfg  
Varies  
N/A  
N/A  
Always the Unique 64-bit ID  
Varies  
Varies  
0x0000  
0x0000  
0x2061  
0x00E1  
0x0000  
0x0000  
Do Not Modify without Special Guidance from Maxim  
Always Required for Charge Control  
nChgCtrl  
1
nRGain  
Becomes Free ,  
nNVCfg0.enDP  
nNVCfg1.enFTh  
Used for Dynamic Power  
Dynamic Power Disabled  
nPackResistance  
1
Becomes Free ,  
1C6h  
nFullSOCThr  
0x0000  
nFullSOCThr→ FullSOCThr  
FullSOCThr = 0x5005  
1
Becomes Free ,  
nTTFCfg Configures Time-to-Full  
Time-to-Full Default  
Calculation  
1C7h  
1C8h  
nTTFCfg  
nCGain  
0x0000  
0x4000  
nNVCfg1.enTTF  
Configuration  
N/A  
Trim for Calibrating Current-Sense Gain  
1
Becomes Free ,  
nNVCfg1.enMtl  
Metal Current Sense TempCo  
Metal Current Sense  
Configurable nTCurve→  
TempCo Enabled,  
(nNVCfg2.enMet  
= 1)  
CGTempCo  
nCGTempCo/  
nTCurve  
CGTempCo = 0x20C8  
1C9h  
0x0000  
1
nNVCfg2.enMet  
= 0  
Becomes Free ,  
Thermistor Curvature Controlled  
Thermistor Curvature  
by nTCurve  
(default)  
Disabled  
1CAh  
1CBh  
1CCh  
1CDh  
1CEh  
nThermCfg  
Reserved  
0x71BE  
0x0000  
0x0000  
0x0000  
0x0000  
N/A  
N/A  
Configuration for Translating Thermistor to ºC  
1
Never Free  
nManfctrName0  
nManfctrName1  
nManfctrName2  
nManfctrName[2:0]→  
1
nNVCfg0.enSBS  
N/A  
Becomes Free  
sManfctrName  
Sense Resistor Value—Helps Host Translate Currents and  
Capacities  
1CFh  
nRSense  
0x01F4  
1D0h  
1D1h  
1D2h  
nUVPrtTh  
nTPrtTh1  
nTPrtTh3  
0x508C  
0x3700  
0x5528  
1
Becomes Free  
nNVCfg1.enProt Configures Protection Thresholds  
Protector Disabled  
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Table 95. Nonvolatile Memory Configuration Options (continued)  
FUNCTION WHEN  
CONTROL BIT(S)  
CLEARED  
REGISTER  
NAME  
FACTORY  
DEFAULT  
CONTROL  
BIT(S)  
FUNCTION WHEN  
CONTROL BIT IS SET  
ADDRESS  
1D3h  
1D4h  
1D5h  
1D6h  
1D7h  
1D8h  
1D9h  
1DAh  
1DBh  
1DCh  
1DDh  
1DEh  
nIPrtTh1  
nBalTh  
0x4BB5  
0x0000  
0x2D0A  
0x7A58  
0x0900  
0x644B  
0x0059  
0xB754  
0xC884  
0xAB3D  
0x0EAF  
0x4355  
nTPrtTh2  
nProtMiscTh  
nProtCfg  
nJEITAC  
nJEITAV  
nOVPrtTh  
nStepChg  
nDelayCfg  
nODSCTh  
nODSCCfg  
nNVCfg1.  
{enProtChkSm  
and enProt}  
Holds CheckSum Value of  
0x1A0–0x1AE for Validating NVM  
at Startup  
1
1DFh  
1E0h  
nProtCfg2  
nDPLimit  
0xA065  
0x0000  
Never Free  
1
Becomes Free  
Dynamic Power Disabled  
nNVCfg0.enDP  
Configures Dynamic Power  
1
Becomes Free  
1E1h  
1E2h  
1E3h  
nScOcvLim  
nAgeFcCfg  
0x0000  
0x0000  
0xA5B9  
nNVCfg1.enSC  
nNVCfg0.enAF  
nNVCfg0.enSBS  
Used for LiFePO Gauging  
4
LiFePO Disabled  
4
1
Configures Age Forecast  
Becomes Free  
nDesignVoltage→  
sDesignVolt  
1
nDesignVoltage  
Becomes Free  
1
1
1E4h  
1E5h  
1E6h  
1E7h  
1E8h  
1E9h  
1EAh  
1EBh  
1ECh  
1EDh  
1EEh  
1EFh  
Reserved  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
0x0000  
N/A  
N/A  
Never Free  
Never Free  
nManfctrDate→ sManfctrDate  
Reserved  
1
nManfctrDate  
nFirstUsed  
Becomes Free  
1
nFirstUsed→ sFirstUsed  
Becomes Free  
nSerialNumber0  
nSerialNumber1  
nSerialNumber2  
nDeviceName0  
nDeviceName1  
nDeviceName2  
nDeviceName3  
nDeviceName4  
nSerialNumber[2:0]→  
sSerialNumber  
1
Becomes Free  
nNVCfg0.enSBS  
nDeviceName[4:0]→  
sDeviceName  
1
Becomes Free  
Note 1: "Free" indicates the address is unused and available as general user nonvolatile memory.  
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100 Record Life Logging  
Addresses 1A0h–1AFh support 100 burn entries of learned battery characteristics and other life logging. The save  
interval is managed automatically using a Fibonacci-like algorithm which provides the following benefits:  
1. Lifespan autopsy/debug data to support analysis of any aged or returned battery  
1. Battery Characteristic Learning/Adaptation. FullCap (nFullCapRep, nFullCapNom), empty-compensation  
(nQRTable00-30), resistance (nRComp0 and nTempCo)  
2. Permanent Failure Information (nBattStatus)  
3. Battery Charge/Discharge Fractional Cycle Counter (nCycles)  
4. 23.9 year Timer (nTimerH)  
5. Log-Interval Max/Min Voltage/Current/Temperature (nMaxMinCurr, nMaxMinVolt, nMaxMinTemp)  
6. Voltage/Temperature at logging moment (nVoltTemp)  
7. Faults from any moment during the logging period.  
2. Intelligently managed save-intervals  
1. Frequent When New. When the battery is new, the updates occur more frequently, since early information  
obtained, such as full-capacity, is more critical for overall performance.  
2. Slower With Age. As the battery matures the update interval slows down, since change observations progress  
slower.  
3. Faster Updates Following Power-Loss. This limits the loss of information associated with power-loss. This is  
limited to seven reset accelerations. The reset counter is also recorded (see the nCycles register). Most battery  
applications can proceed for longer than one year without interruption in power.  
4. Limitation on Slowest Interval. Beyond a certain cycle life, the update interval remains constant.  
Configure this behavior according to the expected battery lifespan using the FibMax and FibScl parameters in nNVCfg2  
as shown in Table 96:  
Table 96. Fibonacci Configuration Settings  
FIBONACCI SCALAR—NNVCFG2.FIBSCL  
Setting  
00  
0.25  
01  
0.5  
10  
1
11  
1st and 2nd Interval  
2
FibMax = 0  
193  
386  
772  
1544  
2484  
3972  
6364  
10186  
16310  
26096  
41760  
FibMax = 1  
FibMax = 2  
FibMax = 3  
FibMax = 4  
FibMax = 5  
FibMax = 6  
FibMax = 7  
310.5  
496.5  
795.5  
1273.25  
2038.75  
3262  
621  
1242  
1986  
3182  
5093  
8155  
13048  
20880  
993  
Battery  
Cycles  
Record  
Limit  
1591  
2546.5  
4077.5  
6524  
10440  
5220  
The bold settings in Table 96 and Table 97 are the generally recommended choices, depending on preference for update  
interval, slowest update rates, and lifespan.  
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Table 97 shows the slowest update intervals associated with each configuration.  
Table 97. Longest Update Interval (in battery cycles)  
FIBONACCI SCALAR—NNVCFG2.FIBSCL  
Setting  
00  
0.25  
2
01  
0.5  
10  
1
11  
2
1st and 2nd Interval  
FibMax = 0  
FibMax = 1  
FibMax = 2  
FibMax = 3  
FibMax = 4  
FibMax = 5  
FibMax = 6  
FibMax = 7  
4
8
16  
3.25  
5.25  
8.5  
6.5  
13  
21  
34  
55  
89  
144  
233  
26  
10.5  
17  
42  
Slowest  
Update  
Interval  
68  
13.75  
22.25  
36  
27.5  
44.5  
72  
110  
178  
288  
466  
58.25  
116.5  
Table 98 illustrates the saving schedule with the most preferred configurations.  
Table 98. Saving Schedule Example With the Most Preferred Configurations  
TOTAL  
EX. CYCLE  
LIFE  
SLOWEST  
UPDATE  
FIBMAX FIBSCL  
1ST 2ND 3RD 4TH 5TH 6TH 7TH 8TH 9TH 10TH 11TH  
1
2
3
4
5
6
7
8
9
310.5  
386  
1
0
2
1
0
3
2
1
4
0
1
0
1
2
0
1
2
0
3.25  
4
0.25 0.25 0.5  
0.5 0.5  
0.25 0.25 0.5  
0.75 1.25  
1.5 2.5  
0.75 1.25  
2
4
2
4
8
2
4
8
2
3.25 3.25 3.25  
.
.
.
1
4
4
.
.
496.5  
621  
5.25  
6.5  
8
3.25 5.25 5.25 5.25  
.
0.5  
1
0.5  
1
1
2
1.5  
3
2.5  
5
6.5  
8
6.5  
8
6.5  
.
.
.
772  
.
.
795.5  
993  
8.5  
10.5  
13  
0.25 0.25 0.5  
0.75 1.25  
3.25 5.25 8.5  
8.5  
.
0.5  
1
0.5  
1
1
2
1.5  
3
2.5  
5
6.5  
13  
10.5 10.5 10.5  
13 13  
.,  
.
1242  
1273.25  
.
13.75  
0.25 0.25 0.5  
0.75 1.25  
3.25 5.25 8.5  
13.75 13.75  
As an example for all subsequent startups for the configuration of Example 9 from Table 98, see the following:  
1st startup [0.25, 0.25, 0.5, 0.75, 1.25, 2, 3.25, 5.25, 8.5, 13.75, ...]  
2nd startup [0.25, 0.5, 0.75, 1.25, 2, 3.25, 5.25, 8.5, 13.75, ...]  
3rd startup [0.5, 0.75, 1.25, 2, 3.25, 5.25, 8.5, 13.75, ...]  
4th startup [0.75, 1.25, 2, 3.25, 5.25, 8.5, 13.75, ...]  
5th startup [1.25, 2, 3.25, 5.25, 8.5, 13.75, ...]  
6th startup [2, 3.25, 5.25, 8.5, 13.75, ...]  
7th startup [3.25, 5.25, 8.5, 13.75, ...]  
8th startup [5.25, 8.5, 13.75, ...]  
Memory Locks and Write Protection  
ModelGauge m5 RAM Registers and all nonvolatile memory locations can be write protected or permanently locked to  
prevent accidental overwriting or data loss in the application. Write protecting or locking a memory block only prevents  
future writes to the locations. Reading locked locations is still allowed. The IC has write protection enabled by default and  
must be disabled (as described in CommStat Register) before any registers can be written. Note that locking a memory  
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location is permanent so carefully choose all desired locks before sending the NV LOCK command.  
The SHA secret is stored in separate secure non-readable memory. There is a different command for locking the SHA  
secret and its state is not displayed in the Lock register. See the SHA-256 Authentication section for details. Once a lock  
bit is set, it can never be cleared. Table 87 shows which lock bits correspond to which memory blocks of the IC.  
CommStat Register (061h)  
Register Type: Special  
Nonvolatile Backup: None  
The CommStat register tracks the progress and error state of any command sent to the Command register. It also  
provides the write protection control and status of each page of registers. Table 99 shows the register format.  
Table 99. CommStat Register (061h) Format  
D15 D14 D13 D12 D11 D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
X
X
X
X
X
X
DISOff CHGOff WP5 WP4 WP3 WP2 WP1 NVError NVBusy WPGlobal  
X: Don’t Care. This bit is undefined and can be logic 0 or 1.  
Write Protection: To prevent the host from accidentally writing any registers of the IC, write protection is enabled by  
default. Any time the host wants to write a register, the global write protection must be disabled as well as the write  
protection for the specific register page. To prevent accidental unlocking of the write protection, the CommStat register  
must be written with the desired value two times in a row without accessing any other registers to set or clear any of the  
write protection bits. All bits can be set or cleared in the same write sequence. For example, writing 0x0000 to CommStat  
twice in a row clears the WPGlobal and all WP1-WP5 at the same time.  
WPGlobal: Write Protection Global Enable. Set to 1 to write protect all register pages. Clear to 0 to allow individual write  
protect bits (WP1–WP5) to be disabled.  
WP1WP5: Write Protection Enable Bits. Set any bit to 1 to write protect the pages specified below. Clear any bit to 0 to  
allow pages to be writable. To update any of these bits, the WPGlobal bit must be 0.  
WP1: Write protects register pages 1Ah, 1Bh, 1Eh  
WP2: Write protects register pages 01h, 02h, 03h, 04h, 0Bh, 0Dh  
WP3: Write protects register pages 18h, 19h  
WP4: Write protects register pages 1Ch  
WP5: Write protects register pages 1Dh  
DISOff: Set this bit to 1 to forcefully turn off DIS FET ignoring all other conditions if nProtCfg.CmOvrdEn is enabled. DIS  
FET remains off as long as this bit stays to 1. Clear to 0 for normal operation. Write Protection must be disabled before  
writing to the DISOff bit.  
CHGOff: Set this bit to 1 to forcefully turn off CHG FET ignoring all other conditions if nProtCfg.CmOvrdEn is enabled.  
CHG FET remains off as long as this bit stays set to 1. Clear to 0 for normal operation. Write Protection must be disabled  
before writing to the CHGOff bit.  
NVBusy: This read only bit tracks if nonvolatile memory is busy or idle. NVBusy defaults to 0 after reset indicating  
nonvolatile memory is idle. This bit sets after a nonvolatile related command is sent to the command register, and clears  
automatically after the operation completes.  
NVError: This bit indicates the results of the previous SHA-256 or nonvolatile memory related command sent to the  
command register. This bit sets if there was an error executing the command or if the Full Reset command is executed.  
Once set, the bit must be cleared by system software in order to detect the next error. Write Protection must be disabled  
before the NVError bit can be cleared by the host.  
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Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
NV LOCK [6AXXh]  
This command permanently locks a block or blocks of memory. To set a lock, send 6AXXh to the Command register  
where the lower 5 bits of the command determine which locks are set. Table 100 shows a detailed format of the NV  
LOCK command. Set each individual LOCK bit to 1 to lock the corresponding register block. Set the LOCK bit to 0 to do  
nothing at this time. For example, writing 6A02h to the Command register sets LOCK2. Writing 6A1Fh sets all five locks.  
Writing 6A00h sets no locks.  
Table 100. Format of LOCK Command  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
LOCK  
5
D3  
LOCK  
4
D2  
LOCK  
3
D1  
LOCK  
2
D0  
LOCK  
1
0
1
1
0
1
0
1
0
0
0
0
LOCK1: Locks register pages 1Ah, 1Bh, 1Eh  
LOCK2: Locks register pages 01h, 02h, 03h, 04h, 0Bh, 0Dh  
LOCK3: Locks register pages 18h, 19h  
LOCK4: Locks register pages 1Ch  
LOCK5: Locks register pages 1Dh  
Locking Memory Blocks  
Prior to sending the lock command, the CommStat.NVError bit should be cleared, and after the command is sent, the  
CommStat.NVError bit should be read to determine if the lock command executed successfully. Note that locking memory  
blocks is a permanent operation. The recommended full sequence is:  
1. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
2. Write 0x0000 to the CommStat register (0x61) one more time to clear CommStat.NVError bit.  
3. Write 0x6AXX to the Command register 0x060 to lock desired blocks.  
4. Wait t  
for the copy to complete.  
UPDATE  
5. Check the CommStat.NVError bit. If set, repeat the process.  
6. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
Reading Lock State  
The Lock register at address 07Fh reports the state of each lock. See Table 101 for the format of the Lock register. If a  
LOCK bit is set, the corresponding memory block is locked. If the LOCK bit is cleared, the corresponding memory block  
is unlocked. Note that the SHA-256 Secret lock state cannot be read through this register.  
Table 101. Format of Lock Register (07Fh)  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
LOCK  
5
D3  
LOCK  
4
D2  
LOCK  
3
D1  
LOCK  
2
D0  
LOCK  
1
X
X
X
X
X
X
X
X
X
X
X
X: Don't Care  
1: LOCK is set  
0: LOCK is clear  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
SHA-256 Authentication Procedures  
The IC supports authentication which is performed using a FIPS 180-4 compliant SHA-256 one-way hash algorithm on  
a 512-bit message block. The message block consists of a 160-bit secret, a 160-bit challenge, and 192 bits of constant  
data. Optionally, the 64-bit ROM ID replaces 64 of the 192 bits of constant data used in the hash operation. Contact  
Maxim for details of the message block organization.  
The host and the IC both calculate the result based on the mutually known secret. The result of the hash operation is  
known as the message authentication code (MAC) or message digest. The MAC is returned by the IC for comparison  
to the host’s MAC. Note that the secret is never transmitted on the bus and thus cannot be captured by observing bus  
traffic. Each authentication attempt is initiated by the host system by writing a 160-bit random challenge into the SHA  
memory address space 0C0h to 0C9h. The host then issues the compute MAC or compute MAC with ROM ID command.  
The MAC is computed per FIPS 180-4 and stored in address space 0C0h to 0CFh overwriting the challenge value.  
The IC introduces the new MAC key derivation function (MKDF), a 2-stage authentication scheme that utilizes an  
intermediate secret for an added layer of security.  
Note that the results of the authentication attempt are determined by host verification. Operation of the IC is not affected  
by authentication success or failure.  
Authentication Procedure  
Figure 30 shows how a host system verifies the authenticity of a connected battery. The host first generates a random  
160-bit challenge value and writes the challenge to IC memory space 0C0h to 0C9h. The host then sends the Compute  
MAC with ROM ID (3500h) or Compute MAC without ROM ID (3600h) to the Command register 060h and waits t  
SHA  
for the computation to complete. Finally, the host reads the MAC from memory space 0C0h to 0CFh to verify the result.  
This procedure requires the secret to be maintained on the host side as well as in the battery. The host must perform the  
same calculations in parallel to verify the battery is authentic.  
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Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Procedure to Verify a Battery  
RANDOM CHALLENGE  
GENERATION  
SECRET  
SECRET  
PARALLEL  
COMPUTATION  
MAC COMPUTATION  
BATTERY  
VERIFICATION  
MACs  
MACs DO  
NOT MATCH  
REJECT  
MATCH  
ACCEPT  
BATTERY  
BATTERY  
HOST  
Figure 30. Procedure to Verify a Battery  
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Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Alternate Authentication Procedure  
Figure 31 shows an alternative method of battery authentication which does not require the host to know the secret. In  
this method, each host device knows a challenge and MAC pair that matches the secret stored in an authentic battery,  
but each host device uses a different pair. This eliminates the need for special hardware on the host side to protect the  
secret from hardware intrusion. A battery could be cloned for a single host device, but creating a clone battery that works  
with any host would not be possible without knowing the secret.  
The authentication process for this method is less complex. The host simply writes the challenge to IC memory space  
0C0h to 0C9h. The host then sends the Compute MAC without ROM ID (3600h) to the Command register 060h. Note  
that Compute MAC with ROM ID Command is not valid for this authentication method. The host then waits t  
computation to complete and reads the MAC from memory space 0C0h to 0CFh to verify the result.  
for  
SHA  
Battery Authentication without a Host Side Secret  
CHALLENGE 1  
MAC  
COMPUTATION  
SECRET  
MAC 1  
VERIFICATION  
VALID BATTERY  
PASS  
FAIL  
HOST 1  
CHALLENGE 2  
MAC 2  
MAC  
COMPUTATION  
SECRET  
VERIFICATION  
PASS FAIL  
VALID BATTERY  
HOST 2  
CHALLENGE N  
MAC N  
MAC  
COMPUTATION  
SECRET  
VERIFICATION  
PASS FAIL  
VALID BATTERY  
HOST N  
Figure 31. Battery Authentication without a Host Side Secret  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Secret Management  
The secret value must be programmed to a known value prior to performing authentication in the application. The secret  
cannot be written directly. Instead, the user must generate a new internal secret by performing a SHA computation with  
the old internal secret and a seed value sent as a challenge. To prevent any one entity from knowing the complete  
secret value, the process can be repeated multiple times by sending additional challenge seeds and performing additional  
computations.  
Note that secret memory can only be changed a maximum of n  
times including erase operations, and nonvolatile  
SECRET  
memory updates are not guaranteed. See the n  
write limit in the Electrical Characteristics table. Any secret  
SECRET  
update operation that fails does not change the secret value stored in the IC, but consumes one of the available  
limited updates. Be careful not to use up all secret memory during the generation process. Maxim strongly recommends  
permanently locking the secret after it has been generated.  
Single-Step Secret Generation  
The single-step secret generation procedure should be used in production environments where the challenge seed value  
can be kept confidential, for example, when there are no OEM manufacturing steps or situations where an outside  
individual or organization would need to know the challenge seed. Use the following sequence to program the IC. Since  
the secret cannot be read from the IC, a parallel computation must be performed externally in order to calculate the  
stored secret. Figure 32 shows an example single step secret generation operation. Note that new units have their secret  
value already cleared to all 0s.  
1. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
2. Clear the CommStat.NVError bit.  
3. Write a challenge seed value to the SHA memory space 0C0h to 0C9h.  
4. Write Compute Next Secret with ROM ID 3300h or Compute Next Secret without ROM ID 3000h to the Command  
register 060h.  
5. Wait t  
+ t  
for the computation to complete and the new secret to be stored.  
SHA  
UPDATE  
6. If CommStat.NVError is set, return to step 1, otherwise, continue.  
7. Verify the secret has been generated correctly with a test challenge at this time. If verification fails, return to step 1.  
See the Determining Number of Remaining Updates section to verify that enough nonvolatile memory writes remain  
in order to repeat the process.  
8. Write Lock Secret 6000h to the Command register 060h. Note this operation cannot be reversed.  
9. Wait t  
for secret to lock permanently.  
UPDATE  
10. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
Single-Step Secret Generation Example  
SEED  
STARTING  
COMPUTE  
SECRET CLEARED  
NEXT  
TO ALL 0s  
PARALLEL  
COMPUTATION  
FINAL SECRET  
BATTERY  
FINAL SECRET  
Figure 32. Single-Step Secret Generation Example  
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Maxim Integrated | 141  
 
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Multistep Secret Generation Procedure  
The multistep secret generation procedure should be used in environments where an outside individual or organization  
would need to know the challenge seed such as OEM manufacturing. The multistep procedure is more complicated but  
allows a secret to be stored inside the IC without providing any information to an OEM manufacturer that could jeopardize  
secret integrity. Figure 33 shows an example where three OEM manufacturers are each provided with a seed value for a  
Compute Next operation. The final secret value stored inside the IC are known only to the top level manager who knows  
all seed values and has performed the computation separately. Use the following procedures when generating a multi-  
step secret. Note that the secret can only be updated or cleared n  
already cleared to all 0s.  
times total. New units have their secret value  
SECRET  
All OEMs:  
1. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
2. Clear the CommStat.NVError bit.  
3. Write the challenge seed value to the SHA memory space 0C0h to 0C9h.  
4. Write Compute Next Secret with ROM ID 3300h or Compute Next Secret without ROM ID 3000h to the Command  
register 060h.  
5. Wait t  
+ t  
for computation to complete and new secret to be stored.  
SHA  
UPDATE  
6. If CommStat.NVError is set, return to step 1, otherwise, continue.  
7. Verify the secret has been generated correctly with a test challenge at this time. If verification fails, return to step 1.  
See the Determining Number of Remaining Updates section to verify that enough nonvolatile memory writes remain  
in order to repeat the process.  
8. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
Last OEM:  
1. Follow the procedure above for the final secret update, but skip step 8.  
2. Write Lock Secret 6000h to the Command register 060h. Note this operation cannot be reversed.  
3. Wait t  
for secret to lock permanently.  
UPDATE  
4. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
Top Level:  
1. Generate all seed values to provide to OEMs.  
2. Perform SHA calculations separately to determine what the final secret is after all manufacturing steps.  
3. Keep final secret value secure.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Multistep Secret Generation Example  
SEED 1 GENERATION  
STARTING SECRET  
CLEARED TO ALL  
COMPUTE  
SEED 1  
NEXT  
0s  
CHALLENGE 1  
AND MAC 1 FOR  
VERIFICATION  
MIDDLE SECRET 1  
COMPUTATION  
MIDDLE SECRET 1  
OEM 1  
BATTERY  
SEED 3  
GENERATION  
COMPUTE  
NEXT  
SEED 2  
MIDDLE SECRET 1  
CHALLENGE 2  
AND MAC 2 FOR  
VERIFICATION  
MIDDLE SECRET 2  
COMPUTATION  
MIDDLE SECRET 2  
OEM 2  
BATTERY  
SEED 3  
GENERATION  
COMPUTE  
NEXT  
SEED 3  
MIDDLE SECRET 2  
CHALLENGE 3  
AND MAC 3 FOR  
VERIFICATION  
FINAL SECRET  
FINAL SECRET  
OEM 3  
BATTERY  
Figure 33. Multistep Secret Generation Example  
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Maxim Integrated | 143  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
2-Stage MKDF Authentication Scheme  
The IC introduces the new 2-stage MKDF authentication scheme that utilizes an intermediate secret for an added layer  
of security. Figure 34 illustrates how to create a unique intermediate secret that can be stored in the host at the factory.  
Figure 35 outlines the procedure to complete the 2-stage authentication.  
The following procedure implements the MKDF authentication scheme:  
1. Write Copy Intermediate Secret from NVM command 3800h to the Command register 060h.  
2. Write the unique challenge seed value to the SHA memory space 0C0h to 0C9h to be used to compute the next  
intermediate secret.  
3. Write Compute Next Intermediate Secret with ROM ID 3900h or Compute Next Intermediate Secret without ROM ID  
3A00h to the Command register 060h.  
4. Wait t  
for computation to complete.  
SHA  
5. Write the challenge seed value to the SHA memory space 0C0h to 0C9h to be used to compute MAC using the  
intermediate secret.  
6. Write Compute MAC From Intermediate Secret with ROM ID 3D00h or Compute MAC From Intermediate Secret  
without ROM ID 3C00h to the Command register 060h.  
7. Wait t  
for computation to complete.  
SHA  
8. Read the MAC from SHA memory space 0C0h to 0CFh to verify the result.  
Because the intermediate secret is stored in the same RAM location used for SHA calculation, executing some  
commands overwrites the intermediate secret. The functional impact is summarized as follows:  
● Compute MAC and Compute Next Secret commands overwrites the intermediate secret.  
● Copy intermediate secret from NVM overwrites the intermediate secret (as expected).  
● Compute MAC from intermediate secret also overwrites the intermediate secret. If an intermediate secret is used for  
multiple MAC calculations, the intermediate secret needs to be reconstructed after each MAC computation.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Create a Unique Intermediate Secret  
UNIQUE  
CHALLENGE  
SECRET  
COMPUTE NEXT SECRET  
UNIQUE INTERMEDIATE  
SECRET  
FACTORY (ONCE PER HOST)  
Figure 34. Create a Unique Intermediate Secret  
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Maxim Integrated | 145  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Procedure for 2-Stage MKDF Authentication  
UNIQUE INTERMEDIATE  
SECRET  
COMPUTE NEXT  
STEP 1  
INTERMEDIATE  
SECRET  
UNIQUE CHALLENGE  
SECRET  
UNIQUE INTERMEDIATE  
SECRET  
RANDOM CHALLENGE  
GENERATION  
STEP 2  
STEP 3  
MAC COMPUTATION FROM  
INTERMEDIATE SECRET  
PARALLEL COMPUTATION  
VERIFICATION  
BATTERY  
MACs  
MATCH  
ACCEPT  
BATTERY  
MACs DO  
NOT MATCH  
REJECT  
BATTERY  
HOST  
Figure 35. Procedure for 2-Stage MKDF Authentication  
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Maxim Integrated | 146  
MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Determining Number of Remaining Updates  
The internal secret can only be updated or cleared n  
calculated using the following procedure:  
times total. The number of remaining updates can be  
SECRET  
1. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
2. Write 0xE29D to the Command register (060h).  
3. Wait t  
.
RECALL  
4. Read memory address 1FDh.  
5. Decode address 1FDh data as shown in Table 102. Each secret update has redundant indicator flags for reliability.  
Logically OR the upper and lower bytes together then count the number of 1s to determine how many updates have  
already been used. The first update occurs in the manufacturing test to clear the secret memory prior to shipping to  
the user.  
6. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
Table 102. Number of Remaining Secret Updates  
ADDRESS 0E6H  
DATA  
LOGICAL OR OF UPPER AND LOWER  
BYTES  
NUMBER OF UPDATES  
USED  
NUMBER OF UPDATES  
REMAINING  
0000000x00000001b  
or  
00000001b  
00000011b  
00000111b  
00001111b  
00011111b  
00111111b  
1
2
3
4
5
6
5
4
3
2
1
0
000000010000000xb  
000000xx0000001xb  
or  
0000001x000000xxb  
00000xxx000001xxb  
or  
000001xx00000xxxb  
0000xxxx00001xxxb  
or  
00001xxx0000xxxxb  
000xxxxx0001xxxxb  
or  
0001xxxx000xxxxxb  
00xxxxxx001xxxxxb  
or  
001xxxxx00xxxxxxb  
Authentication Commands  
All SHA authentication commands are written to memory address 060h to perform the desired operation. Writing the  
Challenge or reading the MAC is handled by accessing the SHA memory space on page 0Ch through direct write and  
read operations. Note that write protection must be disabled before issuing any of the SHA-256 commands.  
COMPUTE MAC WITHOUT ROM ID [3600h]  
The challenge value must be written to the SHA memory space prior to performing a Compute MAC. This command  
initiates a SHA-256 computation without including the ROM ID in the message block. Instead, the ROM ID portion of the  
message block is replaced with a value of all 1s. Since the ROM ID is not used, this command allows the use of a master  
secret and MAC response independent of the ROM ID. The IC computes the MAC in t  
after receiving the last bit of  
SHA  
this command. After the MAC computation is complete, the host can read the MAC from the SHA memory space.  
COMPUTE MAC WITH ROM ID [3500h]  
The challenge value must be written to the SHA memory space prior to performing a Compute MAC. This command is  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
structured the same as the compute MAC without ROM ID, except that the ROM ID is included in the message block.  
With the unique ROM ID included in the MAC computation, the MAC is unique to each unit. After the MAC computation  
is complete, the host can read the MAC from the SHA memory space.  
COMPUTE NEXT SECRET WITHOUT ROM ID [3000h]  
This command initiates a SHA-256 computation and uses the resulting MAC as the next or new secret. The hash  
operation is performed with the current 160-bit secret and the new 160-bit challenge. Logical 1s are loaded in place of  
the ROM ID. The last 160 bits of the MAC are used as the new secret value. The host must allow t  
after issuing this  
SHA  
command for the SHA calculation to complete, then wait t  
for the new secret value to be stored in nonvolatile  
UPDATE  
memory. During this operation, the SHA memory space is not updated. Note that the old secret value must be known  
prior to executing this command in order to calculate what the new secret value is.  
COMPUTE NEXT SECRET WITH ROM ID [3300h]  
This command initiates a SHA-256 computation and uses the resulting MAC as the next or new secret. The hash  
operation is performed with the current 160-bit secret, the 64-bit ROM ID, and the new 160-bit challenge. The last 160  
bits of the output MAC are used as the new secret value. The host must allow t  
after issuing this command for the  
SHA  
SHA calculation to complete, then wait t  
for the new secret value to be stored in nonvolatile memory. During this  
UPDATE  
operation, the SHA memory space is not updated. Note that the old secret value must be known prior to executing this  
command in order to calculate what the new secret value is.  
CLEAR SECRET [5A00h]  
This command sets the 160-bit secret to all 0s. The host must wait t  
for the IC to write the new secret value to  
UPDATE  
nonvolatile memory. This command uses up one of the secret write cycles.  
LOCK SECRET [6000h]  
This command write protects the secret to prevent accidental or malicious overwrite of the secret value. The secret value  
stored in nonvolatile memory becomes permanent. The host must wait t for the lock operation to complete.  
UPDATE  
The SHA-256 Lock state is not shown in the Lock register. Lock state can be verified by reading nonvolatile memory  
history using the following sequence:  
1. Write 0x0000 to the CommStat register (0x61) two times in a row to unlock write protection.  
2. Send 0xE29B to the Command register (060h).  
3. Wait for t  
.
RECALL  
4. Read memory address 1FCh.  
5. Write 0x00F9 to the CommStat register (0x61) two times in a row to lock write protection.  
If address 1FCh is 0x0000, then the secret is not locked. If address 1FCh is anything other than 0x0000, then the secret  
is permanently locked.  
COPY INTERMEDIATE SECRET FROM NVM [3800]  
This command copies the secret from NVM and places it in RAM to allow the secret to be used by the other commands.  
COMPUTE NEXT INTERMEDIATE SECRET WITH ROMID [3900]  
This command is similar to COMPUTE NEXT SECRET WITH ROMID except the secret used in the computation comes  
from the previously executed COPY INTERMEDIATE SECRET FROM NVM or COMPUTE NEXT INTERMEDIATE  
SECRET WITH/WITHOUT ROMID and the next secret is placed in RAM so it can be used in subsequent commands.  
COMPUTE NEXT INTERMEDIATE SECRET WITHOUT ROMID [3A00]  
This command is similar to COMPUTE NEXT SECRET WITHOUT ROMID except the secret used in the computation  
comes from the previously executed COPY INTERMEDIATE SECRET FROM NVM or COMPUTE NEXT  
INTERMEDIATE SECRET WITH/WITHOUT ROMID and the next secret is placed in RAM so it can be used in  
subsequent commands.  
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
COMPUTE MAC FROM INTERMEDIATE SECRET WITHOUT ROMID [3C00]  
This command is the same as COMPUTE MAC WITHOUT ROMID except the secret used in the computation comes  
from the previously executed COPY INTERMEDIATE SECRET FROM NVM or COMPUTE NEXT INTERMEDIATE  
SECRET WITH/WITHOUT ROMID.  
COMPUTE MAC FROM INTERMEDIATE SECRET WITH ROMID [3D00]  
This command is the same as COMPUTE MAC WITH ROMID except the secret used in the computation comes from  
the previously executed COPY INTERMEDIATE SECRET FROM NVM or COMPUTE NEXT INTERMEDIATE SECRET  
WITH/WITHOUT ROMID.  
Smart Battery Compliant Operation  
The IC is compliant to the Smart Battery Specification v1.1 when nNVCfg0.enSBS = 1. Enabling SBS operation  
does not interfere with normal operation of the IC. SBS formatted registers are accessed at slave address 16h, the  
memory addresses 100h to 17Fh using SBS protocols. SBS functionality can be configured using the nSBSCfg and  
nDesignVoltage registers.  
SBS Compliant Memory Space  
The IC contains an SBS v1.1 Compliant memory space on pages 10h to 17h that can be accessed using the Read Word,  
Write Word, and Read Block commands at 2-wire slave address 16h. Table 103 lists the SBS compliant registers. Refer  
to the SBS 1.1 Specification for details of registers at addresses 100h to 12Fh. Registers marked with Note 3 in the table  
are shared between SBS and normal IC functions and are always readable regardless of IC settings. Their format is  
described in the Analog Measurements section of the data sheet. All other registers on pages 13h to 17h are described  
in this section. Greyed locations are reserved and should not be written to.  
Table 103. SBS Register Space Memory Map  
PAGE/  
10_h  
11_h  
12_h  
13_h  
14_h  
15_h  
16_h  
17_h  
WORD  
sManfct  
Access  
sManfctr  
Name  
0h  
sFullCap  
sRunTTE  
sAvgTTE  
sAvgTTF  
sMinVolt  
1
sRemCap  
Alarm  
sDevice  
1h  
2h  
3h  
4h  
5h  
6h  
AvgPowerL  
1
Name  
sRemTime  
Alarm  
sDev  
Chemistry  
sMinCurr  
1
sBattery  
Mode  
sManfct  
3
3
3
3
[s]AvgTemp4  
[s]AvgTemp3  
[s]AvgTemp2  
[s]AvgTemp1  
2
Data  
sCharging  
Current  
sAtRate  
sAtTTF  
sAtTTE  
sCharging  
Voltage  
sBattery  
Status  
3
7h  
8h  
sAtRateOK  
sCycles  
[s]Temp4  
sAvCap  
3
sTemperature  
sDesignCap  
[s]Temp3  
sMixCap  
MaxPeak  
Power  
3
9h  
Ah  
Bh  
sPackVoltage  
sCurrent  
sDesignVolt  
sSpecInfo  
[s]Temp2  
3
SusPeak  
3
[s]Temp1  
3
Power  
Pack  
Resistance  
sAvgCurrent  
sManfctDate  
3
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MAX17320  
2S-4S ModelGauge m5 EZ Fuel Gauge with  
Protector, Internal Self-Discharge Detection, and  
SHA-256 Authentication  
Table 103. SBS Register Space Memory Map (continued)  
PAGE/  
10_h  
11_h  
12_h  
13_h  
14_h  
15_h  
16_h  
17_h  
WORD  
sSerial  
Number  
Sys  
Resistance  
Ch  
sMaxError  
sRelSOC  
sAbsSOC  
sRemCap  
sCell4  
sCell3  
sCell2  
sCell1  
sAvgCell4  
sAvgCell3  
sAvgCell2  
sAvgCell1  
2
3
MinSys  
Voltage  
Dh  
Eh  
Fh  
3
MPP  
Current  
3
SPP  
Current  
3
1. Location is read as ASCII data using the Read Block command.  
2. Location is read as Hexadecimal data using the Read Block command.  
3. Location is shared between SBS and normal IC functions and is always readable regardless of IC settings.  
sManfctAccess Register (100h)  
Register Type: Special  
Nonvolatile Backup: None  
Table 104 shows the sManfctAccess register format.  
Table 104. sManfctAccess Register (100h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
PFail  
COFF  
0
DOFF  
ProtMode  
0
0
0
0
0
0
0
0
PFail: Indicates whether the IC is in “Permanent Failure” mode.  
COFF: During charge protection COFF = 1.  
DOFF: During discharge protection DOFF = 1.  
ProtMode: ProtMode indicates the protection mode of the IC, according to Table 105.  
Table 105. Protection Mode Codes  
PROTMODE CODE  
PROTECTION MODE  
1001b  
1010b  
0000b  
0001b  
0010b  
0011b  
0100b  
0110b  
0101b  
0111b  
1010b  
1101b  
1010b  
1011b  
Permanent Failure  
Cell Imbalance  
Discharging  
Charging  
Pre-Charge Mode  
Undervoltage  
Charge Suspension1  
Sleep Mode  
Charge Suspension2  
Fully Charged  
Overdischarge Current  
Overdischarge Current  
Overcharge Current  
Overcharge Current  
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Table 105. Protection Mode Codes (continued)  
PROTMODE CODE  
PROTECTION MODE  
1100b  
1011b  
Battery Failure  
Overdischarge Temp  
sRemCapAlarm/sRemTimeAlarm Registers (101h/102h)  
Register Type: Capacity/Time  
Nonvolatile Restore: None  
sRemCapAlarm: sRemCapAlarm defaults to DesignCap/10 at startup.  
sRemTimeAlarm: sRemTimeAlarm defaults to 10min at startup.  
sBatteryMode Register (103h)  
Register Type: Special  
Nonvolatile Backup: None  
Table 106 shows the sBatteryMode register format.  
Table 106. sBatteryMode Register (103h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
CapMd  
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
Only the CAPACITY_MODE bit is supported from the SBS spec for this register.  
CapMd: CAPACITY_MODE from SBS. If CapMd = 1, the current and capacity registers report with an LSB of 10mW/  
10mWh instead of 1mA/1mAh. If CapMd = 0, the capacity registers report with an LSB of 1mAh.  
At-Rate Functionality  
sAtRate Register (104h)  
Register Type: Current  
Nonvolatile Backup: None  
Host software should write the sAtRate register with a negative two’s-complement 16-bit value of a theoretical load  
current prior to reading any of the at-rate output registers. AtRate calculations are performed using sAtRate (0x104) if  
enSBS = 1, or AtRate(0x004) if enSBS = 0.  
sAtTTF Register (105h)  
Register Type: Time  
Nonvolatile Backup: None  
The sAtTTF register can be used to estimate time to full for any theoretical current load entered into the sAtRate register.  
AtRate calculations are performed using either sAtRate (0x104) if enSBS = 1, or AtRate(0x004) if enSBS = 0.  
sAtTTE Register (106h)  
Register Type: Time  
Nonvolatile Backup: None  
The sAtTTE register can be used to estimate time-to-empty for any theoretical current load entered into the sAtRate  
register. The AtTTE register displays the estimated time-to-empty for the application by dividing AtAvCap by the sAtRate  
register value. sAtTTE is translated from AtTTE for conversion into minutes. AtRate calculations are performed using  
either sAtRate (0x104) if enSBS = 1, or AtRate(0x004) if enSBS = 0.  
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sAtRateOK Register (107h)  
Register Type: Special  
Nonvolatile Restore: None  
From SBS specifications for AtRateOK:  
Description:  
Returns a Boolean value that indicates whether or not the battery can deliver the previously written AtRate value of  
additional energy for 10 seconds (Boolean). If the AtRate value is zero or positive, the AtRateOK function always returns  
true. Result can depend on the setting of the CAPACITY_MODE bit.  
Purpose:  
The AtRateOK function is part of a two-function call set used by power management systems to determine if the battery  
can safely supply enough energy for an additional load. It is used immediately after the SMBus host sets the AtRate  
value. See the AtRate register for additional usage information.  
sTemperature Register (108h)  
Register Type: Temperature  
Nonvolatile Restore: None  
Temperature is translated from the AvgTA register.  
sPackVoltage Register (109h)  
Register Type: Voltage  
Nonvolatile Restore: None  
sPackVoltage is translated from the PCKP Register.  
sChargingCurrent Register (114h)  
Register Type: Current  
Nonvolatile Restore: None  
As for the SBS, this register returns the smart battery's desired charging rate in milliampere.  
sBatteryStatus Register (116h)  
Register Type: Special  
Nonvolatile Backup: None  
Table 107. BatteryStatus Register (116h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
OChg  
TChg  
X
OTmp  
TDis  
X
RCA  
RTA  
Init  
Dis  
Full  
Empty  
0
0
0
0
X: Don't Care.  
OChg: Over_Charged_Alarm. Set when: Fully charged (0x47), or OverChargeTemp (0x4B), or  
OverChargeCurrent(0x4A), or ChargeSuspension (0x44). Cleared for other modes.  
TChg: Terminate_Charge_Alarm: Set when: FullyCharged (0x47), or OverChargeTemp (0x4B), or OverChargeCurrent  
(0x4A), or ChargeSuspension (0x44), or BatteryFailure (0x4C), or Permanent Failure (0x89). Cleared for other modes.  
OTmp: Over_Temp_Alarm. Set when: OverChargeTemp (0x4B) or OverDischargeTemp (0x8B). Cleared for other  
modes.  
TDis: Terminate_Discharge_Alarm. Set when: Min_Cel < V_TBD or OverDischargeCurrent (0x1A or 0x8D), or RSOC <  
SALRT_Th1.Min, or OverDischargeTemp (0x8B). Cleared if Min_Cell > V_TBD, and RSOC > SOC_TBD, and not (0x1A  
or 0x8D).  
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RCA: RemCapAlarm. Set if sRemCap < RemCapAlarm. Cleared otherwise.  
RTA: RemainingTimeAlarm. Set if AverageTimeToEmpty < RemTimeAlarm, cleared otherwise.  
Init: Initialized. Always 1.  
Dis: Discharging. Set if sCurrent ≤ 0mA and cleared if sCurrent > 0.  
Full: Fully_Charged. Set if (RepSOC > 0x6380 (99.5%)). Cleared when RepSOC < 85%.  
Empty: Fully_Discharged. Set if RepSOC < 1%. Cleared when RepSOC ≥ 19%.  
sSpecInfo Register (11Ah)  
Register Type: Special  
Nonvolatile Backup: None  
Table 108. SpecInfo Register (11Ah) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
0
0
0
0
0
0
0
0
0
0
1
1 (PEC)  
0
0
0
1
PEC: PEC indicates whether the pack is configured to support SMBus PEC correction. PEC is always enabled on the  
MAX17320 in SBS Mode.  
sManfctrDate Register (11Bh)  
Register Type: Special  
Nonvolatile Backup: None  
Table 109. sManfctrDate Register (11Bh) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
Year  
Month  
Day  
sManfctrDate indicates the manufacturer’s date, according to the value stored in MTP, nManfctrDate.  
sSerialNumber Register (11Ch to 11Eh)  
Register Type: Special  
Nonvolatile Restore: None  
SerialNumber indicates the 16-bit serial number as stored in nSerialNumber MTP. SerialNumber2 and SerialNumber3  
provide extended data for the serial number as stored in nSerialNumber2 and nSerialNumber3. By using 6 bytes total, a  
serial number can provide a very unique ID for 281 trillion devices. A 4-byte serial number can support 4.3 billion devices.  
Some of the bits can be fixed to indicate platform or other information.  
sManfctrName Register (120h)  
Register Type: Special  
Nonvolatile Restore: nManfctrName  
2
2
A block SMBus/I C read of 0x20 on the I C slave 0x16 (SBS) reports RAM address 0x120 sequenced with 0x146 to  
0x14A, for a total of 6 words of data. The first byte indicates the byte length and the following bytes are ASCII characters  
representing the brand name of the pack. This data is taken from nManfctrName in NVM, except that the byte count is  
set by firmware instead of saved in NVM.  
sDeviceName Register (121h)  
Register Type: Special  
Nonvolatile Restore: nDeviceName  
2
2
A block SMBus/I C read of 0x21 on the I C slave 0x16 (SBS) reports RAM address 0x121 sequenced with 0x140 to  
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0x143, for a total of 5 words of data. The first byte indicates the byte length and the following bytes are ASCII characters  
representing the device name. This data is taken from nDeviceName in NVM, except that the byte count is set by  
firmware instead of saved in NVM.  
sDevChemistry Register (122h)  
Register Type: Special  
Nonvolatile Restore: None  
2
2
A block SMBus/I C read of 0x22 on the I C slave 0x16 (SBS) reports RAM address 0x122 sequenced with 0x156 to  
0x158, for a total of 4 words of data. The first byte indicates the byte length and the following bytes are ASCII characters  
representing the device chemistry. For the IC, this string is always “LION,” which is standard for all SBS packs.  
sManfctData Registers (123h to 12Fh)  
Register Type: Various  
Nonvolatile Restore: None  
The bytes of this read-block command are defined as follows:  
Byte 0: Cell count. Copy from NCELLS information.  
Byte 1: High-Byte of eep_MEM_VER  
Byte 2: Low-byte of eep_MEM_VER  
Byte 3: High-Byte of Version  
Byte 4: Low-Byte of Version  
Byte 5: HCONFIG  
Byte 6: HCONFIG2  
Byte 7: Q  
Byte 8: QH  
sDesignVolt Register (119h)  
Register Type: Voltage  
Nonvolatile Restore: None  
sDesignVolt is represented per cell.  
sFirstUsed Register (136h)  
This register contains a mirror of the value stored in nonvolatile memory address 1D7h.  
sCell1-4 Registers (13Fh-13Ch)  
This register contains the same cell voltages information displayed in Cell1-4 (0D8h-0D5h) respectively with SBS  
compliant formatting. 1 LSb = 1mV giving a full scale range of 0.0V to 65.535V.  
sAvgCell1-4 Registers (14Fh-14Ch)  
This register contains the same average cell voltage information displayed in AvgCell1-4 (0D4h-0D1h) with SBS  
compliant formatting. 1 LSb = 1mV giving a full scale range of 0.0V to 65.535V.  
sAvCap Register (167h)  
This register contains the same information as the AvCap (01Fh) register. It is formatted for SBS compliance where 1  
LSb = 1.0mAh giving a full scale range of 0.0mAh to 65535mAh.  
sMixCap Register (168h)  
This register contains the same information as the MixCap (00Fh) register. It is formatted for SBS compliance where 1  
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LSb = 1.0mAh giving a full scale range of 0.0mAh to 65535mAh.  
sManfctInfo Register (170h)  
The sManfctInfo register is accessed using the SBS protocol read block command. This register function is not supported  
in the IC.  
nDesignVoltage Register (1E3h)  
Register Type: Special  
Factory Default Value: A5B9h  
Nonvolatile Restore: There is no associated restore location for this register  
Table 110. nDesignVoltage Register (1E3h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
Vminsys  
Vdesign  
Vminsys: (unsigned byte) = 'Minimum system voltage' specification for the design. Generates MinSysVoltage value.  
Vdesign: (unsigned byte) = 'Design voltage' specification for the design.  
Each byte has an LSb = 20mV (resolution) giving a full scale range = 0V to 5.12V.  
These values are used in SBS calculations only when enSBS = 1.  
nSBSCfg Register (1B4h)  
Register Type: Special  
Nonvolatile Restore: There is no associated restore location for this register.  
The nSBSCfg register manages settings for SBS mode operation of the IC. Table 111 shows the register format.  
Table 111. nSBSCfg Register (1B4h) Format  
D15  
D14  
D13  
D12  
D11  
D10  
D9  
D8  
D7  
D6  
D5  
D4  
D3  
D2  
D1  
D0  
CapMd  
X
X
X
X
X
X
X
X
X
X
X
WPen  
MECfg  
X
X: Don’t Care. This bit is undefined and can be logic 0 or 1.  
MECfg: Configures sMaxError register output when operating in SBS mode.  
00: Always report 0% error  
01: Always report 1% error  
10: Report actual experienced error  
11: Always report 3% error  
CapMd: Selects the sBatteryMode.CapMd bit default setting when operating in SBS mode. CapMd resets to 0 every time  
a pack removal occurs as detected by floating communication lines.  
WPen: Write Protection Enable. Set WPen to 0 for SBS mode.  
Nonvolatile SBS Register Backup  
When SBS mode operation is enabled by setting nNVCfg0.enSBS = 1, data from several nonvolatile memory locations  
is translated into SBS memory space. Table 112 lists these translations. Note that when performing an SBS Read Block  
command, the IC automatically generates the size data byte by counting the number of sequential non-zero data bytes  
stored in the corresponding nonvolatile memory locations. The nonvolatile memory only needs to store the actual data  
to be read by an SBS Read Block command. If SBS mode of operation is disabled, these locations become available for  
general-purpose nonvolatile data storage.  
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Table 112. SBS to Nonvolatile Memory Mapping  
NONVOLATILE MEMORY  
ADDRESS  
NONVOLATILE MEMORY REGISTER  
NAME  
SBS MEMORY  
ADDRESS  
S REGISTER  
NAME  
1D6h  
1D7h  
nManfctrDate  
nFirstUsed  
1Bh  
sManfctrDate  
sFirstUsed  
36h  
20h  
1CCh–1CEh  
1D8h–1DAh  
1DBh–1DFh  
nManfctrName[2:0]  
nSerialNumber[2:0]  
nDeviceName[4:0]  
sManfctrName  
sSerialNumber  
sDeviceName  
(Read Block Command)  
1Ch  
(Read Block Command)  
21h  
(Read Block Command)  
nCGain and Sense Resistor Relationship  
To meet SBS compliance, current and capacity registers in the SBS memory space must have an LSb bit weight of  
1.0mA and 1.0mAh. The current gain must be adjusted based on the application sense resistor value to set the proper bit  
weight. Table 113 shows the proper nCGain value to use for the most common sense resistor values. This is the default  
register value only. It does not include any offset trim or custom gain adjustment. Note that changing the nCGain register  
affects the gain reported by the standard ModelGauge m5 current and capacity registers.  
Table 113. nCGain Register Settings to Meet SBS Compliance  
SENSE RESISTOR VALUE (Ω)  
NCGAIN REGISTER VALUE  
CORRESPONDING CGAIN REGISTER VALUE  
0.0025  
0.005  
0.010  
4000h  
2000h  
1000h  
0400h  
0200h  
0100h  
Device Reset  
There are two different levels of reset for the IC. A full reset restores the IC to its power-up state the same as if power  
had been cycled. A fuel-gauge reset resets only the fuel gauge operation without resetting IC hardware. This is useful for  
testing different configurations without writing nonvolatile memory. Use the following sequences to reset the IC.  
FULL RESET  
1. Write 0x0000 to CommStat register (0x61) two times in a row to unlock write protection.  
2. Write 0x000F to the Command register 0x060 to send the full reset command to the IC.  
3. Wait 10ms for the IC to reset. Write protection resets after the full reset command.  
4. Write 0x0000 to CommStat register (0x61) two times in a row to unlock write protection.  
5. Write 0x8000 to Config2 register 0x0AB to reset IC fuel gauge operation. This command does not disturb the state of  
the protection FETs.  
6. Wait for POR_CMD bit (bit 15) of the Config2 register to be cleared to indicate that the POR sequence is complete.  
7. Write 0x00F9 to CommStat register (0x61) two times in a row to lock write protection.  
FUEL-GAUGE RESET  
1. Write 0x0000 to CommStat register (0x61) two times in a row to unlock write protection.  
2. Write 0x8000 to Config2 register 0x0AB to reset IC fuel gauge operation. This command does not disturb the state of  
the protection FETs.  
3. Wait for POR_CMD bit (bit 15) of the Config2 register to be cleared to indicate that the POR sequence is complete.  
4. Write 0x00F9 to CommStat register (0x61) two times in a row to lock write protection.  
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Reset Commands  
There are two commands that can be used to reset either the entire IC or just the operation of the fuel gauge. Note that  
the reset fuel gauge command is written to Config2 instead of the Command register.  
HARDWARE RESET [000Fh to address 060h]  
Send the hardware reset command to the Command register to recall all nonvolatile memory into shadow RAM and reset  
all hardware-based operations of the IC. This command should always be followed by the reset fuel gauge command to  
fully reset operation of the IC.  
FUEL GAUGE RESET [8000h to address 0ABh]  
The fuel gauge reset command resets operation of the IC without restoring nonvolatile memory values into shadow RAM.  
This command allows different configurations to be tested without using one of the limited number of nonvolatile memory  
writes. This command does not disturb the state of the protection FETs.  
Communication  
This section covers communication protocols and summarizes all special commands used by the IC. The IC  
2
communicates over a 2-wire interface using either I C or SBS protocols depending on the memory address selected by  
the host. The IC communicates using the Maxim 1-Wire interface.  
2-Wire Bus System  
2
The 2-wire version of the IC uses a 2-wire bus system to communicate by both standard I C protocol or by SBS smart  
battery protocol. The slave address used by the host to access the IC determines which protocol is used and which  
2
memory locations are available to read or write. The following sections apply to both protocols. See the I C and SBS Bus  
System descriptions for specific protocol details.  
Hardware Configuration  
The 2-wire bus system supports operation as a slave-only device in a single or multi-slave and single or multi-master  
system. Up to 128 slave devices can share the bus using 7-bit slave addresses. The 2-wire interface consists of a serial  
data line (SDA) and serial clock line (SCL). SDA and SCL provide bidirectional communication between the IC and a  
master device at speeds up to 400kHz. The ICs SDA pin operates bidirectionally. When the IC receives data, SDA  
operates as an input. When the IC returns data, SDA operates as an open-drain output with the host system providing  
a resistive pullup. See Figure 36. The IC always operates as a slave device, receiving and transmitting data under the  
control of a master device. The master initiates all transactions on the bus and generates the SCL signal as well as the  
START and STOP bits, which begin and end each transaction.  
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2-Wire Bus Interface Circuitry  
VPULLUP  
RPULLUP  
BUS MASTER  
DEVICE 2-WIRE PORT  
SDA/DQ  
Rx DATA  
Tx DATA  
Rx DATA  
WEAK  
PULLDOWN  
Tx DATA  
Rx = RECEIVE  
Tx = TRANSMIT  
SCL/OD  
Tx CLOCK  
Rx CLOCK  
WEAK  
PULLDOWN  
Figure 36. 2-Wire Bus Interface Circuitry  
I/O Signaling  
The following individual signals are used to build byte level 2-Wire communication sequences.  
Bit Transfer  
One data bit is transferred during each SCL clock cycle, with the cycle defined by SCL transitioning low to high and then  
high to low. The SDA logic level must remain stable during the high period of the SCL clock pulse. Any change in SDA  
when SCL is high is interpreted as a START or STOP control signal.  
Bus Idle  
The bus is idle, or not busy, when no master device has control. Both SDA and SCL remain high when the bus is idle.  
The STOP condition is the proper method to return the bus to the idle state.  
START and STOP Conditions  
The master initiates transactions with a START condition by forcing a high-to-low transition on SDA while SCL is high.  
The master terminates a transaction with a STOP condition by a low-to-high transition on SDA while SCL is high. A  
Repeated START condition can be used in place of a STOP then START sequence to terminate one transaction and  
begin another without returning the bus to the idle state. In multi-master systems, a Repeated START allows the master  
to retain control of the bus. The START and STOP conditions are the only bus activities in which the SDA transitions  
when SCL is high.  
Acknowledge Bits  
Each byte of a data transfer is acknowledged with an acknowledge bit (ACK) or a negative acknowledge bit (NACK).  
Both the master and the IC slave generate acknowledge bits. To generate an ACK bit, the receiving device must pull  
SDA low before the rising edge of the acknowledge-related clock pulse (ninth pulse) and keep it low until SCL returns  
low. To generate a NACK bit, the receiver releases SDA before the rising edge of the acknowledge-related clock pulse  
and leaves SDA high until SCL returns low. Monitoring the acknowledge bits allows for detection of unsuccessful data  
transfers. An unsuccessful data transfer can occur if a receiving device is busy or if a system fault has occurred.  
In the event of an unsuccessful data transfer, the bus master should reattempt communication. If a transaction is  
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aborted mid-byte, the master should send additional clock pulses to force the slave IC to free the bus prior to restarting  
communication.  
Data Order  
With 2-wire communication, a byte of data consists of 8 bits ordered most significant bit (MSb) first. The least significant  
bit (LSb) of each byte is followed by an ACK bit. IC registers composed of multibyte values are ordered least significant  
byte (LSB) first.  
Slave Address  
A bus master initiates communication with a slave device by issuing a START condition followed by a Slave Address and  
the read/write (R/W) bit. When the bus is idle, the IC continuously monitors for a START condition followed by its slave  
address. When the IC receives a slave address that matches its Slave Address, it responds with an ACK bit during the  
clock period following the R/W bit. The IC supports the slave addresses shown in Table 114.  
Table 114. 2-Wire Slave Addresses  
SLAVE ADDRESS  
PROTOCOL  
ADDRESS BYTE RANGE  
INTERNAL MEMORY RANGE ACCESSED  
2
6Ch  
I C  
00h-FFh  
000h-0FFh  
100h-17Fh  
180h-1FFh  
SMBUS  
00h-7Fh  
16h  
2
I C  
80h-FFh  
Read/Write Bit  
The R/W bit following the slave address determines the data direction of subsequent bytes in the transfer. R/W = 0 selects  
a write transaction, with the following bytes being written by the master to the slave. R/W = 1 selects a read transaction,  
with the following bytes being read from the slave by the master.  
Bus Timing  
The IC is compatible with any bus timing up to 400kHz. See the Electrical Characteristics table for timing details. No  
special configuration is required to operate at any speed. Figure 37 shows an example of standard 2-wire bus timing.  
2-Wire Bus Timing Diagram  
SDA  
tF  
tF  
tSP  
tR  
tBUF  
tSU;DAT  
tHD;STA  
tLOW  
tR  
SCL  
tHD;STA  
tSU;STA  
tSU;STO  
tHD;DAT  
S
SR  
P
S
Figure 37. 2-Wire Bus Timing Diagram  
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2
I C Protocols  
The following 2-wire communication protocols must be used by the bus master to access IC memory locations 000h to  
1FFh. Addresses 000h to 0FFh and 180h to 1FFh can be read continuously. Addresses 100h to 17Fh must be read one  
2
word at a time. These protocols follow the standard I C specification for communication.  
2
I C Write Data Protocol  
The Write Data protocol is used to transmit data to the IC at memory addresses from 000h to 1FFh. Addresses 000h  
to 0FFh and 180h to 1FFh can be written as a block. Addresses 100h to 17Fh must be written one word at a time.  
The memory address is sent by the bus master as a single byte value immediately after the slave address. The MSB  
of the data to be stored is written immediately after the memory address byte is acknowledged. Because the address  
is automatically incremented after the least significant bit (LSb) of each word received by the IC, the MSB of the data  
at the next memory address can be written immediately after the acknowledgment of the LSB of data at the previous  
address. The master indicates the end of a write transaction by sending a STOP or Repeated START after receiving the  
last acknowledge bit. If the bus master continues an auto-incremented write transaction beyond address 0FFh or 1FFh,  
the IC ignores the data. Data is also ignored on writes to read-only addresses but not reserved addresses. Do not write  
to reserved address locations. See Figure 38 for an example Write Data communication sequence.  
WRITE DATA COMMUNICATION PROTOCOL  
SLAVE  
ADDRESS  
MEMORY  
ADDRESS  
DATA0  
LSB  
DATA0  
MSB  
DATA1  
LSB  
DATA N  
MSB  
EXAMPLE WORD WRITE TO I2C COMMAND REGISTER ADDRESS 060h  
COMMAND  
LSB  
COMMAND  
MSB  
6Ch  
(SLAVE ADDRESS)  
60h  
(MEMORY ADDRESS)  
= SLAVE TRANSMISSION  
= HOST TRANSMISSION  
2
Figure 38. Example I C Write Data Communication Sequence  
2
I C Read Data Protocol  
The Read Data protocol is used to transmit data from IC memory locations 000h to 1FFh. Addresses 000h to 0FFh and  
180h to 1FFh can be read as a block. Addresses 100h to 17Fh must be read as individual words. The memory address  
is sent by the bus master as a single byte value immediately after the slave address. Immediately following the memory  
address, the bus master issues a REPEATED START followed by the slave address. The IC sends an ACK bit for the  
address and begins transmitting data. A word of data is read as two separate bytes that the master must acknowledge.  
Because the address is automatically incremented after the least significant bit (LSb) of each word received by the IC,  
the MSB of the data at the next memory address can be read immediately after the acknowledgment of the LSB of data  
at the previous address. The master indicates the end of a read transaction by sending a NACK followed by a STOP.  
If the bus master continues an auto-incremented read transaction beyond the memory address 0FFh or 1FFh, the IC  
transmits all 1s until a NACK or STOP is received. Data from reserved address locations is undefined. See Figure 39 for  
an example Read Data communication sequence.  
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I2C READ DATA COMMUNICATION PROTOCOL  
SLAVE  
ADDRESS  
MEMORY  
ADDRESS  
SLAVE  
ADDRESS  
DATA0  
LSB  
DATA0  
MSB  
DATA1  
LSB  
DATA N  
MSB  
EXAMPLE READ DATA OF CURRENT AND AVGCURRENT REGISTERS ADDRESS 01Ch-01Dh  
6Ch  
(SLAVE WRITE  
ADDRESS)  
6Dh  
(SLAVE READ  
ADDRESS)  
Current  
LSB  
Current  
MSB  
AvgCurrent  
LSB  
AvgCurrent  
MSB  
1Ch  
(MEMORY ADDRESS)  
EXAMPLE READ DATA OF INTTEMP REGISTER ADDRESS 135h  
16h  
(SLAVE WRITE  
ADDRESS)  
17h  
(SLAVE READ  
ADDRESS)  
IntTemp  
LSB  
IntTemp  
MSB  
35h  
(MEMORY ADDRESS)  
= SLAVE TRANSMISSION  
= HOST TRANSMISSION  
2
Figure 39. Example I C Read Data Communication Sequence  
SBS Protocols  
The following 2-wire communication protocols must be used by the bus master to access IC memory locations 100h to  
17Fh. These protocols follow the smart battery specification for communication.  
SBS Write Word Protocol  
The Write Word protocol is used to transmit data to IC memory addresses between 100h and 17Fh that do not require  
the Write Block protocol. The memory address is sent by the bus master as a single byte LSB value immediately after  
the slave address, the MSb of the address is omitted. The LSB of the data to be stored is written immediately after the  
memory address byte is acknowledged, followed by the MSB. A PEC byte can follow the data word, but the data word is  
written without checking the validity of the PEC. The master indicates the end of a write transaction by sending a STOP  
or Repeated START after receiving the last acknowledge bit. Data is ignored on writes to read-only addresses but not  
reserved addresses. Do not write to reserved address locations. The Write Word protocol should not be used to write  
to addresses supported by the Write Block protocol, use Write Block at these locations instead. See Figure 40 for an  
example Write Word communication sequence.  
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Example SBS Write Word Communication Sequence  
SBS WRITE WORD COMMUNICATION PROTOCOL  
SLAVE  
ADDRESS  
MEMORY  
ADDRESS  
DATA  
LSB  
DATA  
MSB  
PEC  
(OPTIONAL)  
EXAMPLE WORD WRITE TO SBS ATRATE REGISTER AT REGISTER ADDRESS 104h  
DATA  
LSB  
DATA  
MSB  
16h  
(SLAVE ADDRESS)  
PEC  
(OPTIONAL)  
04h  
(MEMORY ADDRESS)  
= SLAVE TRANSMISSION  
= HOST TRANSMISSION  
Figure 40. Example SBS Write Word Communication Sequence  
SBS Read Word Protocol  
The Read Word protocol is used to read data from the IC at memory addresses between 100h and 17Fh. The memory  
address is sent by the bus master as a single byte LSB value immediately after the slave address, the MSb of the address  
is ignored. The LSB of the data is read immediately after the memory address byte is acknowledged, followed by the  
MSB. A PEC byte follows the data word. The master indicates the end of a write transaction by sending a STOP or  
Repeated START after not acknowledging the last received byte. Data from reserved address locations is undefined. The  
Read Word protocol should not be used to read from addresses supported by the Read Block protocol, use Read Block  
at these locations instead. See Figure 41 for an example Read Word communication sequence.  
Example SBS Read Word Communication Sequence  
SBS READ WORD COMMUNICATION PROTOCOL  
SLAVE  
ADDRESS  
MEMORY  
ADDRESS  
SLAVE  
ADDRESS  
DATA  
LSB  
DATA  
MSB  
PEC  
(OPTIONAL)  
EXAMPLE READ WORD OF SBS sTEMPERATURE REGISTER ADDRESS 108h  
16h  
(SLAVE WRITE  
ADDRESS)  
17h  
(SLAVE READ  
ADDRESS)  
sTEMPERATURE  
LSB  
sTEMPERATURE  
LSB  
PEC  
(OPTIONAL)  
08h  
(MEMORY ADDRESS)  
= SLAVE TRANSMISSION  
= HOST TRANSMISSION  
Figure 41. Example SBS Read Word Communication Sequence  
SBS Write Block Protocol  
The SBS Write Block protocol is not supported by the IC. Use the Write Data command sequence to the corresponding  
nonvolatile memory locations to update Write/Read Block register locations. See Table 103.  
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SBS Read Block Protocol  
The Read Block protocol is similar to the Read Word protocol except the master reads multiple words of data at once.  
A data size byte is transmitted by the IC immediately after the memory address byte and before the first byte of data to  
be read. The Read Block protocol is only supported at the register locations shown in Table 115. PEC error checking is  
provided by the Read Block protocol if nNVCfg0.enSBS = 1. Figure 42 shows an example Read Block communication  
sequence.  
Example SBS Read Block Communication Sequence  
SBS READ BLOCK COMMUNICATION PROTOCOL  
SLAVE  
ADDRESS  
MEMORY  
ADDRESS  
SLAVE  
ADDRESS  
PEC  
SIZE  
DATA0  
DATA0  
DATA (size-2)  
DATA3  
(Optional)  
Example Block Read of SBS DevChemistry Register Address 122h  
16h  
(SLAVE WRITE  
ADDRESS)  
17h  
(SLAVE READ  
ADDRESS)  
PEC  
(Optional)  
22h  
05h  
(MEMORY ADDRESS)  
(Size)  
= SLAVE TRANSMISSION  
= HOST TRANSMISSION  
Figure 42. Example SBS Read Block Communication Sequence  
Valid SBS Read Block Registers  
Table 115. Valid SBS Read Block Registers  
ADDRESS  
REGISTER  
sManfctName  
sDeviceName  
sDevChemistry  
sManfctData  
sSerialNumber  
sManfctInfo  
SIZE BYTE MAX VALUE  
FORMAT  
0120h  
0Ah  
0Ch  
05h  
1Ah  
08h  
18h  
ASCII String  
ASCII String  
ASCII String  
Hexadecimal  
Hexadecimal  
Hexadecimal  
0121h  
0122h  
0123h  
011Ch  
0170h  
Packet Error Checking  
SBS read functions support packet error checking (PEC) if nNVCfg0.enSBS is enabled. The host system is responsible  
for verifying the CRC value it receives and taking action as a result. SBS write functions accept a PEC byte but complete  
the write function regardless of the value of the PEC.  
The CRC can be generated by the host using a circuit consisting of a shift register and XOR gates as shown in Figure 43,  
8
2
1
or it can be generated in software using the polynomial X + X + X + 1. Refer to the Smart Battery Data Specification  
for more information.  
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PEC CRC Generation Block Diagram  
INPUT  
XOR  
XOR  
XOR  
MSb  
LSb  
Figure 43. PEC CRC Generation Block Diagram  
1-Wire Bus System  
The 1-Wire version of the IC communicates to a host through a Maxim 1-Wire interface. The 1-Wire bus is a system that  
has a single bus master and one or more slaves. A multi-drop bus is a 1-Wire bus with multiple slaves, while a single-drop  
bus has only one slave device. In all instances, this IC is a slave device. The bus master is typically a microprocessor in  
the host system. The discussion of this bus system consists of five topics: 64-bit net address, CRC generation, hardware  
configuration, transaction sequence, and 1-Wire signaling.  
Hardware Configuration  
Because the 1-Wire bus has only a single line, it is important that each device on the bus be able to drive it at the  
appropriate time. To facilitate this, each device attached to the 1-Wire bus must connect to the bus with open-drain or  
tri-state output drivers. The IC uses an open-drain output driver as part of the bidirectional interface circuitry shown in  
Figure 44. If a bidirectional pin is not available on the bus master, separate output and input pins can be connected  
together. Communication speed is controlled by the OD/SCL pin. Connect OD/SCL to PACK- to enable communication  
at standard speed. Connect OD/SCL to the REG3 pin to enable communication at overdrive speed.  
The 1-Wire bus must have a pullup resistor on the host side of the bus. A value between 2kΩ and 5kΩ is recommended  
for most applications. The idle state for the 1-Wire bus is logic high. If, for any reason, a bus transaction must be  
suspended, the bus must be left in the idle state to properly resume the transaction later. Note that if the bus is left low  
for more than t  
, slave devices on the bus begin to interpret the low period as a reset pulse, effectively terminating  
LOW0  
the transaction.  
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1-Wire Bus Interface Circuitry  
VPULLUP  
BUS MASTER  
DEVICE 1-WIRE PORT  
RPULLUP  
SDA/DQ  
Rx  
Tx  
Rx  
SCL/OD  
WEAK  
PULLDOWN  
Tx  
Rx = RECEIVE  
Tx = TRANSMIT  
STANDARD TIMING  
VPULLUP  
RPULLUP  
BUS MASTER  
DEVICE 1-WIRE PORT  
SDA/DQ  
Rx  
Tx  
Rx  
Tx  
SCL/OD  
REG3  
WEAK  
PULLDOWN  
0.47µF  
Rx = RECEIVE  
Tx = TRANSMIT  
OVERDRIVE TIMING  
Figure 44. 1-Wire Bus Interface Circuitry  
64-Bit Net Address (ROM ID)  
The 1-Wire net address is 64 bits in length. The term net address is synonymous with the ROM ID or ROM code  
terms used in other 1-Wire documentation. The value of the net address is stored in nonvolatile memory and cannot be  
changed. In a 1-Wire standard net address, the first 8 bits of the net address are the 1-Wire family code. This value is the  
same for all ICs of the same type. The next 48 bits are a unique serial number. The last 8 bits are a cyclic redundancy  
check (CRC) of the first 56 bits. Table 116 details the Net Address data format. The 64-bit net address and the 1-Wire I/  
O circuitry built into the device enable the 1-Wire version of the IC to communicate through the 1-Wire protocol detailed  
in this data sheet.  
Table 116. 1-Wire Net Address Format  
MSb: 8-Bit CRC  
48-Bit Serial Number  
LSb: 8-Bit Family Code (26h)  
I/O Signaling  
The 1-Wire bus requires strict signaling protocols to ensure data integrity. The four protocols used by the IC are as  
follows: the initialization sequence (reset pulse followed by presence pulse), write 0, write 1, and read data. The bus  
master initiates all signaling except for the presence pulse.  
Reset Time Slot  
The initialization sequence required to begin any communication with the IC is shown in Figure 45. The bus master  
transmits (Tx) a reset pulse for t  
. The bus master then releases the line and goes into Receive mode (Rx). The  
RSTL  
1-Wire bus line is then pulled high by the pullup resistor. After detecting the rising edge on the DQ pin, the IC waits for  
t
and then transmits the presence pulse for t  
. A presence pulse following a reset pulse indicates that the IC is  
PDL  
PDH  
ready to accept a net address command.  
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1-Wire Initialization Sequence  
tRSTL  
tRSTH  
VPULLUP  
tPDH  
tPDL  
GND  
LINE TYPE LEGEND:  
BUS MASTER ACTIVE-LOW  
SLAVE IC ACTIVE-LOW  
RESISTOR PULLUP  
BOTH BUS MASTER AND SLAVE IC  
ACTIVE-LOW  
Figure 45. 1-Wire Initialization Sequence  
Write Time Slots  
A write time slot is initiated when the bus master pulls the 1-Wire bus from a logic-high (inactive) level to a logic-low level.  
There are two types of write time slots: Write 1 and Write 0. All write time slots must be t in duration with a 1μs  
SLOT  
minimum recovery time, t  
, between cycles. The IC samples the 1-Wire bus line between t  
and t  
REC  
LOW1_MAX LOW0_MIN  
after the line falls. If the line is high when sampled, a write 1 occurs. If the line is low when sampled, a Write 0 occurs.  
The sample window is illustrated in Figure 46. For the bus master to generate a Write 1 time slot, the bus line must be  
pulled low and then released, allowing the line to be pulled high less than t  
after the start of the write time slot. For  
RDV  
the host to generate a Write 0 time slot, the bus line must be pulled low and held low for the duration of the write time  
slot.  
Read Time Slots  
A read-time slot is initiated when the bus master pulls the 1-Wire bus line from a logic-high level to a logic-low level.  
The bus master must keep the bus line low for at least 1μs and then release it to allow the IC to present valid data. The  
bus master can then sample the data t  
from the start of the read-time slot. By the end of the read-time slot, the IC  
RDV  
releases the bus line and allows it to be pulled high by the external pullup resistor. All read-time slots must be t  
in  
SLOT  
duration with a 1μs minimum recovery time, t  
, between cycles. See Figure 46 and the timing specifications in the  
REC  
Electrical Characteristics table for more information.  
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1-Wire Write and Read Time Slots  
WRITE 0 SLOT  
WRITE 1 SLOT  
tSLOT  
tLOW0  
tSLOT  
tLOW1  
VPULLUP  
tREC  
GND  
>1s  
DEVICE SAMPLE WINDOW  
DEVICE SAMPLE WINDOW  
MIN TYP  
MAX  
30s  
3s  
MIN TYP  
MAX  
30s  
3s  
MODE  
STANDARD  
15s  
2s  
15s  
15s  
2s  
15s  
OVERDRIVE  
1s  
1s  
READ DATA SLOT  
DATA = 0  
DATA = 1  
tSLOT  
tSLOT  
tREC  
VPULLUP  
tRDV  
tRDV  
GND  
>1s  
MASTER SAMPLE  
WINDOW  
MASTER SAMPLE  
WINDOW  
MODE  
STANDARD  
15s  
2s  
15s  
2s  
OVERDRIVE  
LINE TYPE LEGEND:  
BUS MASTER ACTIVE-LOW  
SLAVE IC ACTIVE-LOW  
RESISTOR PULLUP  
BOTH BUS MASTER AND SLAVE IC  
ACTIVE-LOW  
Figure 46. 1-Wire Write and Read Time Slots  
Transaction Sequence  
The protocol for accessing the IC through the 1-Wire port is as follows:  
● Initialization  
● Net Address Command  
● Function Command(s)  
● Data Transfer (not all commands have data transfer)  
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Net Address Commands  
Once the bus master has detected the presence of one or more slaves, it can issue one of the net address commands  
described in the following sections. The name of each net address command (ROM command) is followed by the 8-bit  
op code for that command in square brackets.  
Read Net Address [33h]  
This command allows the bus master to read the ICs 1-Wire net address. This command can only be used if there is a  
single slave on the bus. If more than one slave is present, a data collision occurs when all slaves try to transmit at the  
same time (open-drain produces a wired-AND result).  
Match Net Address [55h]  
This command allows the bus master to specifically address one IC on the 1-Wire bus. Only the addressed IC responds  
to any subsequent function command. All other slave devices ignore the function command and wait for a reset pulse.  
This command can be used with one or more slave devices on the bus.  
Skip Net Address [CCh]  
This command saves time when there is only one IC on the bus by allowing the bus master to issue a function command  
without specifying the address of the slave. If more than one slave device is present on the bus, a subsequent function  
command can cause a data collision when all slaves transmit data at the same time.  
Search Net Address [F0h]  
This command allows the bus master to use a process of elimination to identify the 1-Wire net addresses of all slave  
devices on the bus. The search process involves the repetition of a simple three-step routine: read a bit, read the  
complement of the bit, then write the desired value of that bit. The bus master performs this simple three-step routine on  
each bit location of the net address. After one complete pass through all 64 bits, the bus master knows the address of  
one device. The remaining devices can then be identified on additional iterations of the process. Refer to Chapter 5 of  
®
the Book of iButton Standards for a comprehensive discussion of a net address search, including an actual example  
(www.maximintegrated.com/iButtonBook).  
iButton is a registered trademark of Maxim Integrated Products, Inc.  
1-Wire Functions  
After successfully completing one of the net address commands, the bus master can access the features of the IC with  
either a Read Data or Write Data function command described in the following sections. Any other IC operation such as a  
Compute MAC operation is accomplished by writing to the COMMAND register. See the Nonvolatile Memory Commands  
section for details.  
Read Data [69h, LL, HH]  
This command reads data from the IC starting at memory address HHLL. Any memory address from 0000h to 01FFh is  
a valid starting address. The LSb of the data in address HHLL is available to be read immediately after the MSb of the  
address has been entered. Because the address is automatically incremented after the MSb of each byte is received,  
the LSb of the data at address HHLL + 1 is available to be read immediately after the MSb of the data at address  
HHLL. If the bus master continues to read beyond address 01FFh, data is undefined. Addresses labeled “Reserved” in  
the memory map contain undefined data values. The Read Data command can be terminated by the bus master with a  
reset pulse at any bit boundary. Reads from nonvolatile memory addresses return the data in the shadow RAM. A Recall  
Data command is required to transfer data from nonvolatile memory to the shadow RAM. See the Nonvolatile Memory  
Commands section for details. See Figure 47 for an example Read Data communication sequence.  
Write Data [6Ch, LL, HH]  
This command writes data to the IC starting at memory address HHLL. Any memory address from 0000h to 01FFh is a  
valid starting address. The LSb of the data to be stored at address HHLL can be written immediately after the MSb of  
the address has been entered. Because the address is automatically incremented after the MSb of each byte is written,  
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the LSb to be stored at address HHLL + 1 can be written immediately after the MSb to be stored at address HHLL. If  
the bus master continues to write beyond address 01FFh, the data is ignored by the IC. Writes to read-only addresses  
and locked memory blocks are ignored. Do not write to RESERVED address locations. Incomplete bytes are not written.  
Writes to unlocked nonvolatile memory addresses modify the shadow RAM. A Copy NV Block command is required to  
transfer data from the shadow RAM to nonvolatile memory. See the Nonvolatile Memory Commands section for details.  
See Figure 47 for an example Write Data communication sequence.  
Example 1-Wire Communication Sequences  
1-WIRE READ DATA PROTOCOL  
69h  
CCh  
MEMORY  
ADDRESS LSB  
MEMORY  
ADDRESS MSB  
DATA0 LSB  
DATA0 LSB  
DATA0 MSB  
DATA0 MSB  
DATA1 LSB  
DATA1 LSB  
DATA N MSB  
DATA N MSB  
RESET  
(OR OTHER NET  
ADDRESS COMMAND)  
(READ DATA  
COMMAND)  
1-WIRE WRITE DATA PROTOCOL  
6Ch  
(WRITE DATA  
COMMAND)  
CCh  
MEMORY  
ADDRESS LSB  
MEMORY  
ADDRESS MSB  
RESET  
(OR OTHER NET  
ADDRESS COMMAND)  
EXAMPLE OF READ NET ADDRESS  
NET ADDRESS  
LSB  
(Family Code)  
NET ADDRESS  
NET ADDRESS  
1
NET ADDRESS  
2
NET ADDRESS  
3
NET ADDRESS  
4
NET ADDRESS  
5
NET ADDRESS  
6
33h  
(READ NET ADDRESS)  
MSB  
(CRC)  
RESET  
EXAMPLE READ OF TEMP AND VCELL REGISTERS ADDRESS 0008h-0009h  
69h  
(READ DATA  
COMMAND)  
00h  
(ADDRESS MSB)  
CCh  
(SKIP NET ADDRESS)  
08h  
TEMP LSB  
TEMP MSB  
VCELL LSB  
VCELL MSB  
RESET  
(ADDRESS LSB)  
EXAMPLE WRITE OF ATRATE REGISTER ADDRESS 0004h  
6Ch  
(WRITE DATA  
COMMAND)  
00h  
(ADDRESS MSB)  
CCh  
(SKIP NET ADDRESS)  
04h  
ATRATE LSB  
ATRATE MSB  
RESET  
(ADDRESS LSB)  
= SLAVE TRANSMISSION  
= HOST TRANSMISSION  
Figure 47. Example 1-Wire Communication Sequences  
Summary of Commands  
Any operation other than writing or reading a memory location is executed by writing the appropriate command to the  
Command or Config2 registers. Table 117 lists all function commands understood by the IC. For both 1-Wire and 2-Wire  
communication, the function command must be written to the Command (060h) or Config2 (0ABh) registers. Device  
commands are described in detail in the Authentication, Nonvolatile Memory, Reset, and Power Up sections of the data  
sheet.  
Table 117. All Function Commands  
COMMAND  
TYPE  
REGISTER  
HEX  
DESCRIPTION  
Compute MAC  
Without ROM ID  
Computes hash operation of the message block with logical 1s in place of  
the ROM ID.  
SHA  
060h  
3600h  
Compute MAC With  
ROM ID  
SHA  
060h  
3500h Computes hash operation of the message block including the ROM ID.  
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Table 117. All Function Commands (continued)  
COMMAND  
TYPE  
REGISTER  
HEX  
DESCRIPTION  
Compute Next  
Secret Without ROM  
ID  
Computes hash operation of the message block with logical 1s in place of  
the ROM ID. The result is then stored as the new Secret.  
SHA  
060h  
3000h  
Compute Next  
Secret With ROM ID  
Computes hash operation of the message block including the ROM ID.  
The result is then stored as the new Secret.  
SHA  
060h  
3300h  
Clear Secret  
Lock Secret  
Copy NV Block  
NV Recall  
SHA  
060h  
060h  
060h  
060h  
060h  
5A00h Resets the SHA-256 Secret to a value of all 0s.  
SHA  
6000h Permanently locks the SHA-256 Secret.  
Memory  
Memory  
Memory  
E904h Copies all shadow RAM locations to nonvolatile memory at the same time.  
E001h Recalls all nonvolatile memory to RAM.  
History Recall  
E2XXh Recalls a page of nonvolatile memory history into RAM page 1Eh.  
Permanently locks an area of memory. See the Memory Locks section for  
NV Lock  
Memory  
Reset  
060h  
060h  
0ABh  
6AXXh  
details.  
Recalls nonvolatile memory into RAM and resets the IC hardware. Fuel  
gauge operation is not reset.  
Hardware Reset  
Fuel Gauge Reset  
000Fh  
Restarts the fuel gauge operation without affecting nonvolatile shadow  
RAM settings.  
Reset  
8000h  
16-Reading ADC FIFO Feature  
The IC supports an ADC FIFO feature, which allows a user-triggered acquisition cycle of 16-samples of AvgVCell and  
AvgCurrent, sampled every 2.8s, for a total acquisition time of 45s. AvgCurrent and AvgVCell filtering is configurable (see  
nFilterCfg) with a default filter time-constant of 5.625s (AvgCurrent) and 45s (AvgVCell). Set FilterCfg = 0x0E83 for faster  
filtering to better match the FIFO update rate (2.8s for AvgCurrent and 11.25s for AvgVCell).  
Set Config2.ADCFIFOen = 1 and disable nonvolatile nConfig.ADCFIFOen = 0 to trigger a single acquisition cycle. On  
completion of acquisition, this bit self-resets to 0. Enable nonvolatile nConfig.ADCFIFOen = 1 to keep the ADC FIFO in  
a continuous loop without termination. Since the ADC FIFO uses the same register-space as SBS, it is incompatible with  
SBS. Set nNVCfg0.enSBS = 0 to prevent collision between these incompatible features.  
The FIFO is useful for measuring system shutdown consumption during production testing. Use the following sequence  
to measure the system consumption during system shutdown:  
1. Ensure nNVCfg0.enSBS = 0 (generally just once during initial NVM configuration).  
2. Host enables the ADC FIFO (write Config2.ADCFIFOEn = 1) and sets FilterCfg = 0E83h.  
3. Host shuts everything down (except pack and the IC).  
4. Host remains shut down for at least 6 seconds (ideally closer to 45s for more readings).  
5. Host boots up and inspects the FIFO (slave 16h registers 00h to 1Fh) to understand the system consumption during  
system shutdown.  
2
NOTE: I C addresses on slave 16h from 00h to 7Fh must be read one word at a time.  
The FIFO can be used in other applications to acquire voltage and current data with less frequent polling or system  
wakeup by setting nonvolatile nConfig.ADCFIFOen = 1.  
The memory map is shown in Table 118.  
2
Table 118. I C Slave Address = 0x16 (SBS Memory Area)  
INDEX  
PAGE = 0  
CurrentBuf0  
CurrentBuf1  
CurrentBuf2  
PAGE = 1  
VoltBuf0  
VoltBuf1  
VoltBuf2  
PAGE = 2  
CurrentMax0  
CurrentMin0  
CurrentMax1  
PAGE = 4  
VoltMax0  
VoltMin0  
VoltMax1  
0
1
2
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2
Table 118. I C Slave Address = 0x16 (SBS Memory Area) (continued)  
INDEX  
PAGE = 0  
CurrentBuf3  
CurrentBuf4  
CurrentBuf5  
CurrentBuf6  
CurrentBuf7  
CurrentBuf8  
CurrentBuf9  
CurrentBufA  
CurrentBufB  
CurrentBufC  
CurrentBufD  
CurrentBufE  
CurrentBufF  
PAGE = 1  
VoltBuf3  
VoltBuf4  
VoltBuf5  
VoltBuf6  
VoltBuf7  
VoltBuf8  
VoltBuf9  
VoltBufA  
VoltBufB  
VoltBufC  
VoltBufD  
VoltBufE  
VoltBufF  
PAGE = 2  
CurrentMin1  
CurrentMax2  
CurrentMin2  
CurrentMax3  
CurrentMin3  
CurrentMax4  
CurrentMin4  
PAGE = 4  
VoltMin1  
VoltMax2  
VoltMin2  
VoltMax3  
VoltMin3  
VoltMax4  
VoltMin4  
3
4
5
6
7
8
9
A
B
C
D
E
F
ADCIndex  
Appendix A: Reading History Data Pseudo-Code Example  
The following pseudo-code can be used as a reference for reading history data from the IC. The code first reads all  
flag information, tests all flag information, then reads all valid history data into a two-dimensional array. Afterwards,  
the HistoryLength variable indicates the depth of the history array data. Note before starting this sequence, the Write  
Protection should be disabled by writing 0x0000 to the CommStat register (0x61) two times in a row. At the conclusion of  
the pseudo-code, the Write Protection should be enabled by writing 0x00F9 to the CommStat register (0x61) two times  
in a row.  
Int WriteFlags[26];  
Int ValidFlags[26];  
Boolean PageGood[100];  
Int HistoryData[100][16];  
Int HistoryLength;  
Int word, position, flag1, flag2, flag3, flag4;  
//Read all flag information from the IC  
WriteCommand(0xE2FB);  
Wait(t  
);  
RECALL  
WriteFlags[0] = ReadData(0x1E1);  
WriteFlags[1] = ReadData(0x1E2);  
WriteFlags[2] = ReadData(0x1E3);  
WriteFlags[3] = ReadData(0x1E4);  
WriteFlags[4] = ReadData(0x1E5);  
WriteFlags[5] = ReadData(0x1E6);  
WriteFlags[6] = ReadData(0x1E7);  
WriteFlags[7] = ReadData(0x1E8);  
WriteFlags[8] = ReadData(0x1E9);  
WriteFlags[9] = ReadData(0x1EA);  
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WriteFlags[10] = ReadData(0x1EB);  
WriteFlags[11] = ReadData(0x1EC);  
WriteFlags[12] = ReadData(0x1ED);  
WriteFlags[13] = ReadData(0x1EE);  
WriteFlags[14] = ReadData(0x1EF);  
WriteCommand(0xE2FC);  
Wait(t  
);  
RECALL  
WriteFlags[15] = ReadData(0x0E0);  
WriteFlags[16] = ReadData(0x0E1);  
WriteFlags[17] = ReadData(0x0E2);  
WriteFlags[18] = ReadData(0x0E3);  
WriteFlags[19] = ReadData(0x0E4);  
WriteFlags[20] = ReadData(0x0E5);  
WriteFlags[21] = ReadData(0x0E6);  
WriteFlags[22] = ReadData(0x0E7);  
WriteFlags[23] = ReadData(0x0E8);  
WriteFlags[24] = ReadData(0x0E9);  
WriteFlags[25] = ReadData(0x0EA);  
ValidFlags[0] = ReadData(0x0EB);  
ValidFlags[1] = ReadData(0x0EC);  
ValidFlags[2] = ReadData(0x0ED);  
ValidFlags[3] = ReadData(0x0EE);  
ValidFlags[4] = ReadData(0x0EF);  
WriteCommand(0xE2FD);  
Wait(t  
);  
RECALL  
ValidFlags[5] = ReadData(0x1E0);  
ValidFlags[6] = ReadData(0x1E1);  
ValidFlags[7] = ReadData(0x1E2);  
ValidFlags[8] = ReadData(0x1E3);  
ValidFlags[9] = ReadData(0x1E4);  
ValidFlags[10] = ReadData(0x1E5);  
ValidFlags[11] = ReadData(0x1E6);  
ValidFlags[12] = ReadData(0x1E7);  
ValidFlags[13] = ReadData(0x1E8);  
ValidFlags[14] = ReadData(0x1E9);  
ValidFlags[15] = ReadData(0x1EA);  
ValidFlags[16] = ReadData(0x1EB);  
ValidFlags[17] = ReadData(0x1EC);  
ValidFlags[18] = ReadData(0x1ED);  
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ValidFlags[19] = ReadData(0x1EE);  
ValidFlags[20] = ReadData(0x1EF);  
WriteCommand(0xE2FE);  
Wait(t  
);  
RECALL  
ValidFlags[21] = ReadData(0x1E0);  
ValidFlags[22] = ReadData(0x1E1);  
ValidFlags[23] = ReadData(0x1E2);  
ValidFlags[24] = ReadData(0x1E3);  
ValidFlags[25] = ReadData(0x1E4);  
//Determine which history pages contain valid data  
For loop = 0 to 99  
{
word = (int)( loop / 8 );  
position = loop % 8 ; //remainder  
flag1 = (WriteFlags[word] >> position) & 0x0001;  
flag2 = (WriteFlags[word] >> (position+8)) & 0x0001;  
flag3 = (ValidFlags[word] >> position) & 0x0001;  
flag4 = (ValidFlags[word] >> (position+8)) & 0x0001;  
if (flag1 || flag2) && (flag3 || flag4)  
PageGood[loop] = True;  
else  
PageGood[loop] = False;  
}
//Read all the history data from the IC  
HistoryLength = 0;  
For loop = 0 to 99  
{
if(PageGood[loop]) == TRUE  
{
SendCommand(0xE226 + loop);  
Wait(t  
);  
RECALL  
HistoryData[HistoryLength][0] = ReadData(0x1E0);  
...  
HistoryData[HistoryLength][15] = ReadData(0x0EF);  
HistoryLength++;  
}
}
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Typical Application Circuits  
Typical Application Schematic  
3 TERM  
FUSE*  
PACK+  
0.1µF  
100Ω  
DIS  
N
100Ω  
PFAIL* CHG  
1kΩ  
10kΩ  
CP  
IN  
ZVC  
0.47µF  
0.1µF  
10Ω  
PCKP  
0.01µF  
AOLDO*  
REG3  
0.47µF  
BATTS  
CELL3*  
CELL2*  
0.47µF  
REG2  
0.47µF  
0.01µF  
0.01µF  
0.01µF  
50Ω  
50Ω  
50Ω  
ALRT*  
SDA/DQ  
SCL/OD  
TH4*  
TH3*  
CELL1  
TH2*  
0.01µF  
MAX17320  
GND  
TH1*  
CSP  
CSN  
10kΩ  
5mΩ  
PACK-  
*OPTIONAL  
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Typical Application Circuits (continued)  
Typical 2S-4S Battery Pack and System Implementation  
BATTERY  
SYSTEM  
3 TERM  
FUSE  
PACK+  
CHARGER  
N
PFAIL CHG  
CP  
DIS  
ZVC  
ALWAYS-ON  
PCKP  
IN  
LOADS  
AOLDO*  
RTC  
REG3  
REG2  
BATTS  
CELL3*  
CELL2*  
ALRT*  
SDA/DQ  
SYSTEM LOAD  
SCL/OD  
TH4*  
TH3*  
CELL1  
TH2*  
MAX17320  
GND  
TH1*  
CSP  
CSN  
PACK-  
*OPTIONAL  
The IC measures voltage of the cells and balances the charge using internal FETs and the balancing resistors. It also  
measures current using a sense resistor that is accumulated to give a coulomb count and measures temperature using  
an on-chip sensor or up to 4 external thermistors, since the cells are likely to be located far away from the IC. The  
protector control drives a pair of high-side N-channel FETs. The IC also opens a three-terminal fuse for harsh faults that  
necessitate the battery to be permanently disabled for safety reasons. To power small loads like real-time clocks or  
housekeeping microcontrollers that need to be always on, the IC provides a regulated output that stays alive even when  
the protection FETs are opened. This output powers down only when the cells are severely depleted and, therefore,  
prevents any further drain for safety reasons.  
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SHA-256 Authentication  
Typical Application Circuits (continued)  
Typical Application with a Fuse  
3 TERM  
FUSE  
PACK+  
N
PFAIL CHG  
DIS  
ZVC  
CP  
IN  
PCKP  
AOLDO*  
REG3  
REG2  
BATTS  
CELL3*  
CELL2*  
ALRT*  
SDA/DQ  
SCL/OD  
TH4*  
TH3*  
CELL1  
TH2*  
MAX17320  
GND  
TH1*  
CSP  
CSN  
PACK-  
*OPTIONAL  
The IC can permanently open a three-terminal fuse with the PFAIL pin when a permanent failure is detected. A  
secondary protector can also be included to open the three-terminal fuse.  
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Typical Application Circuits (continued)  
Pushbutton Schematic  
BATT  
SYSTEM  
INTERFACE  
PMIC  
CHG  
DIS  
ALRT  
BUTTON  
PUSHBUTTON  
MAX17320  
1.8V (VIO  
)
OPTIONAL  
PULLUP  
SYSTEM AP  
The IC and the system can share a pushbutton to wake up the system and the IC. The diode on the system interface  
PMIC blocks the pulldown when there is no supply. This prevents the wakeup for the IC when the system interface  
PMIC loses power in ship mode. The diode on the ALRT pin prevents the alert pulldown from triggering a button action  
on the PMIC. This prevents accidental shutdown in the event of an uncleared alert for > 10 seconds. The FET between  
the IC and the System AP blocks the System AP pulldown from triggering the wakeup when the AP does not have  
power. The FET acts as a level shifter and passes the pulldown alert signal in both directions when the 1.8V voltage is  
present.  
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SHA-256 Authentication  
Ordering Information  
PART NUMBER  
MAX17320X10+  
SHA-256  
INTERFACE  
1-Wire  
PIN-PACKAGE  
30 WLP  
MAX17320X10+T  
MAX17320X12+  
1-Wire  
30 WLP  
Included  
Included  
1-Wire  
30 WLP  
MAX17320X12+T  
MAX17320X20+  
1-Wire  
30 WLP  
2
I C  
30 WLP  
2
MAX17320X20+T  
MAX17320X22+  
I C  
30 WLP  
2
Included  
Included  
I C  
30 WLP  
2
MAX17320X22+T  
MAX17320G10+  
MAX17320G10+T  
MAX17320G12+  
MAX17320G12+T  
MAX17320G20+  
MAX17320G20+T  
MAX17320G22+  
MAX17320G22+T  
I C  
30 WLP  
1-Wire  
1-Wire  
1-Wire  
1-Wire  
24 TQFN  
24 TQFN  
24 TQFN  
24 TQFN  
24 TQFN  
24 TQFN  
24 TQFN  
24 TQFN  
Included  
Included  
2
I C  
2
I C  
2
Included  
Included  
I C  
2
I C  
+Denotes a lead(Pb)-free/RoHS-compliant package.  
T = Tape and reel.  
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Revision History  
REVISION REVISION  
PAGES  
DESCRIPTION  
CHANGED  
NUMBER  
DATE  
0
2/20  
Initial release  
Updated the General Description section, Benefits and Features section, Absolute  
Maximum Ratings section, Functional Diagrams section, Detailed Description  
section, Protector section, Permanent Failure section, Table 8, nUVPrtTh Register  
(1D0h), nBattStatus Register (1A8h), ProtAlrt Register (0AFh), Table 56, nConfig  
Register (1B0h), Table 103, and Ordering Information table; added Typical  
Operating Characteristics, Battery Internal Self-Discharge Detection (ISD) section,  
Configuring ISD section, Internal Self-Discharge Detection with Cell Balancing  
section, Wake-Up/Shutdown section, and Battery Internal Self-Discharge Detection  
Registers  
1, 18, 26–29,  
33–34, 37,  
47–48, 50, 64,  
73, 75–76, 79,  
86–87, 90, 92,  
98, 106, 146, 178  
1
4/20  
Updated the title, General Description, and Battery Internal Self-Discharge Detection  
(ISD) section  
2
3
4
5
6
7
5/20  
5/20  
6/20  
6/20  
8/20  
8/20  
1, 47  
178  
Updated the Ordering Information table  
Updated the Simplified Block Diagram, Typical Application Schematic, and Ordering  
Information table  
1, 170, 178  
178  
Updated the Ordering Information table  
Updated Table 51, the nChgCfg (1C2h) Prequal Configuration description,  
nFullSOCThr Register (1C6h) description, Table 94, and Ordering Information table  
95, 100, 105,  
129, 178  
Updated the Pin Description table  
32  
For pricing, delivery, and ordering information, please visit Maxim Integrated’s online storefront at https://www.maximintegrated.com/en/storefront/storefront.html.  
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent  
licenses are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max  
limits) shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.  
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.  
© 2020 Maxim Integrated Products, Inc.  

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