MAX17606 [MAXIM]
Secondary-Side Synchronous MOSFET Driver for Flyback Converters;型号: | MAX17606 |
厂家: | MAXIM INTEGRATED PRODUCTS |
描述: | Secondary-Side Synchronous MOSFET Driver for Flyback Converters |
文件: | 总12页 (文件大小:507K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
General Description
Benefits and Features
● Wide 4.5V to 36V Input
● 2A/4A Peak Source/Sink Gate Drive Currents
● Suitable for Discontinuous Conduction Mode (DCM),
Border Conduction Mode (BCM)
● 320µA (typ) Low Quiescent Current
● Programmable Turn-Off Trip Point
The MAX17606 is a secondary-side synchronous driver
and controller specifically designed for the isolated flyback
topology operating in Discontinuous Conduction Mode
(DCM) or Border Conduction Mode (BCM). By replacing
the secondary diode with a MOSFET, the device improves
the efficiency and simplifies thermal management. The
7V V
of the device makes it suitable for switching
DRV
● Programmable Minimum Off-Time to Handle DCM
both logic-level and standard MOSFETs used for flyback
synchronous rectification. The 36V input voltage allows
it to drive from either the output voltage or rectified drain
voltage of the secondary MOSFET. Programmable minimum
on and off-times provide flexibility needed to handle
transformer parasitic element-related ringing in a robust
manner. With 2A/4A source/sink currents, the MAX17606
Ringing
● Thermal-Shutdown Protection
● 6-Lead SOT-23 Package
Applications
● High-Efficiency Isolated Flyback Converters
is ideal for driving low R
gate transition times.
power MOSFETs with fast
DS(on)
Ordering Information appears at end of data sheet.
Typical Application Circuit for 24V to 5V, 3A Isolated Flyback Converter
V
V
IN
OUT
T1
5V,3A
C1
4.7µF
x4
C9
100µF
6x
C4
1nF
C2
0.1µF
IN
R9
4.7Ω
PGND
R5
47Ω
D1
0
SS
RT
U1
C10
2.2µF
MAX17597
R10
2.74kΩ
R1
49.9kΩ
V
IN
0
DRN
Q1
N
DRV
CS
T
OFF
R6
220Ω
Q2
R14
100kΩ
GATE
U2
V
IN
C7
2.2µF
MAX17606
C5
R7
0.02Ω
GND
1nF
EN/UVLO
V
DRV
0
0
DITHER
OVI
V
R11
470Ω
OUT
U3
4
3
1
2
V
SGND
EP
DRV
FB
R12
1.5kΩ
C8
0.22µF
C6
2.2µF
COMP
R4
22kΩ
R2
49.9kΩ
U4
R13
487Ω
C3
22nF
R3
10.5kΩ
R8
470kΩ
T1-WE750342955
Q1-FDMS86102LZ
Q2-BSZ040N04LSG
0
19-7758; Rev 0; 10/15
MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Absolute Maximum Ratings
V
T
to GND ..........................................................-0.3V to +40V
to GND .........................................................-0.3V to +6V
Continuous Power Dissipation (multilayer board)
IN
(T = +70°C, derate 9.1mW/°C above +70°C.)........727.3mW
OFF
A
DRN (low impedance source) to GND .................-0.3V to +70V
DRN to GND (up to 5mA of pull out current) .......... Self-Limiting
GATE to GND ..........................................-0.3V to VDRV + 0.3V
Operating Temperature Range ........................ -40°C to +125°C
Junction Temperature ................................................... +150°C
Storage Temperature Range ........................... -40°C to +150°C
Soldering Temperature (reflow) .................................... +260°C
V
to GND ..............................-0.3V to Min (V + 0.3, 18)V
DRV
Continuous Power Dissipation (single-layer board)
(T = +70°C, derate 2.7mW/°C above +70°C.)........219.1mW
IN
A
(Note 1)
Package Thermal Characteristics
SOT-23 6L
Junction-to-Ambient Thermal Resistance (θ ) ........110°C/W
Junction-to-Case Thermal Resistance (θ )...............50°C/W
JC
JA
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.
Electrical Characteristics
V
= 12V, C
= 100nF, C
= 2.2μF, GATE = OPEN, DRN = 0V, GND = 0V, R
= 40.2kΩ, T = T = -40°C to +125°C, unless
TOFF A J
IN
VIN
VDRV
otherwise noted. Typical values are at T = +25°C. All voltages are referenced to GND, unless otherwise noted. (Note 2)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
V
V
V
IN
IN
IN
Operating Range
Quiescent Current
V
4.5
36
V
IN
I
DRN = 2V, no switching
320
600
450
µA
Q
DRN switching -150mV to +2V,
300kHz, 50% duty cycle
V
Switching Current
I
µA
IN
SW
V
V
V
V
V
DRV
Regulation Voltage
Regulation Voltage
Dropout Voltage
Current Limit
V
1mA ≤ V ≤ 20mA
DRV
6.6
6.6
7.0
7.0
4.3
55
7.4
7.4
V
V
DRV
DRV
DRV
DRV
DRV_LOAD
V
I
I
= 1mA; 8.5V ≤ V ≤ 36V
IN
DRV_LINE
VDRV
VDRV
V
= 20mA ,V = 4.5V
4.1
V
DRV-DO
IN
I
V
V
V
= 6V; V = 8.5V
IN
26.5
4.0
mA
V
VDRV
DRV
DRV
DRV
V
rising
falling
4.25
4
4.47
4.25
DRV-UVR
DRV-UVH
V
Undervoltage
DRV
Lockout
V
3.75
V
DRN
Maximum Drain Operating
Voltage
V
60
V
DRN
GATE Turn-On Detect
Threshold
V
-150
24
-94
30
mV
mV
GATE-ON
GATE Turn-Off Detect
Threshold
V
35
GATE-OFF
DRN Rising Threshold for
V
DRN-TOFF_
EN
DRN voltage rising
= 40.2KΩ, DRN = 0V
0.87
30.5
V
T
Enable
OFF
DRN Bias Current
IDRN
R
26.5
34.5
µA
TOFF
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│ 2
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Electrical Characteristics (continued)
V
= 12V, C
= 100nF, C
= 2.2μF, GATE = OPEN, DRN = 0V, GND = 0V, R
= 40.2kΩ, T = T = -40°C to +125°C, unless
TOFF A J
IN
VIN
VDRV
otherwise noted. Typical values are at T = +25°C. All voltages are referenced to GND, unless otherwise noted. (Note 2)
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
SWITCHING CHARACTERISTICS (GATE, T
)
OFF
GATE Output Pullup
Resistance
R
V
V
= V
7V, I
= -50mA
1.5
0.5
2.8
0.9
Ω
Ω
ON-P
ON-N
IN
DRV
GATE
GATE Output Pulldown
Resistance
R
= 7V, I
= 190mA
IN
GATE
GATE Peak Source Current
GATE Peak Sink Current
Turn-On Propagation Delay
Turn-Off Propagation Delay
I
2
4
A
G-SOURCE
I
A
G-SINK
T
DRN falling to gate rising
DRN rising to gate falling
26
32
40
50
ns
ns
ns
ns
ns
ns
ON-D
T
OFF-D
T
Programmable range
T
115
315
1550
540
2000
330
OFF
OFF
OFF
R
R
= 40.2kΩ
= 150kΩ
425
1550
240
TOFF
TOFF
T
Accuracy
1150
150
Minimum On-Time
T
ON_MIN
Note 2: Limits are 100% tested at T = +25°C. Limits over the temperature range and relevant supply voltage range are guaranteed
A
by design and characterization.
Maxim Integrated
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Typical Operating Characteristics
V
=13V,V
= 0V, R
= 100kΩ, R
= 2.74kΩ, C
= 2.2µF, T = +25°C, unless otherwise noted.
VDRV A
IN
GND
TOFF
DRN
GATE RISE AND FALL TIME vs. CHARGE
EFFICIENCY vs. LOAD CURRENT
EFFICIENCY COMPARISON
toc1
toc2
100
95
90
85
80
75
70
65
60
55
100
95
90
85
80
75
70
65
60
55
120
100
80
60
40
20
0
VIN = 24V,WITH
MOSFET
VIN = 18V
VIN = 24V,WITH DIODE
RISE TIME
VIN = 36V
VIN = 24V
MOSFET-BSZ040N04LSG
DIODE-STPS30M60DJF-TR
FALL TIME
SEE FIGURE 2 TYPICAL
APPLICATION CIRCUIT
50
0
50
0
1000
2000
3000
1000
2000
3000
0
50
100
150
LOAD CURRENT (mA)
LOAD CURRENT (mA)
CHARGE (nC)
FULL-LOAD STEADY-STATE WAVEFORM
FOR DCM OPERATION, (VIN = 24V, IOUT = 3A)
QUIESCENT CURRENT (IQ)
vs. TEMPERATURE
V
vs. TEMPERATURE
DRV
toc4
380
360
340
320
300
280
260
240
220
200
7.40
7.20
7.00
6.80
6.60
V
DRAIN
5V/div
GATE
SEE FIGURE 2 TYPICAL
APPLICATION CIRCUIT
-40 -20
0
20 40 60 80 100 120 140
TEMPERATURE (°C)
1µS/div
-40 -20
0
20 40 60 80 100 120 140
TEMPERATURE (°C)
5V OUTPUT, 3A LOAD CURRENT
FULL-LOAD, STEADY-STATE WAVEFORM
FOR BCM OPERATION, VIN = 18V, IOUT = 3A
LOAD TRANSIENT RESPONSE
(LOAD CURRENT FROM 1.5A TO 3A ON 5V)
toc9
BODE PLOT
200mV/div
VOUT(AC)
V
DRAIN
5V/div
SEE FIGURE 2 TYPICAL
APPLICATION CIRCUIT
1A/div
GATE
SEE FIGURE 2 TYPICAL
APPLICATION CIRCUIT
F
= 7.622kHz
CR
IOUT
PHASE MARGIN = 73.082°
SEE FIGURE 2 TYPICAL
APPLICATION CIRCUIT
1mS/div
1µS/div
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Pin Configurations
TOP VIEW
+
V
1
2
3
6
5
4
T
OFF
IN
MAX17606
GND
DRN
V
DRV
GATE
SOT-23 6L
Pin Description
PIN
NAME
FUNCTION
1
V
Input Voltage. Connect at least 2.2µF X7R ceramic capacitor from V to GND for bypassing.
IN
IN
IC Ground. The external MOSFET source should be kelvin connected to this pin. See the
MAX17606 EV kit PCB for example layout.
2
GND
Drain Sense Pin of the External MOSFET. Connect the external MOSFET drain to this pin through a
resistor. See the MAX17606 EV kit PCB for example layout.
3
4
5
6
DRN
GATE
External nMOSFET GATE Driver Output.
LDO Output and Driver Input. Connect a 2.2µF bypass capacitor from V
pin to GND, as close
DRV
V
DRV
OFF
as possible to the IC. See the MAX17606 EV kit PCB for example layout.
T
Connect a resistor from T to GND to set the programmable minimum off time.
OFF
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Functional (or Block) Diagram
V
IN
1.21V
V
DRV
V
LDO
PRE REG
INTA
TSDN
608mV
MAX17606
V
INTA
INTERNAL
SUPPLY
T
OFF
GATE = HIGH
0.87V
POK
MIN
DELAY
DRN
T
OFF
GATE
BBM
4V
4.25V
LOGIC
-94mV
30mV
0
1
GATE
GND
MIN
DELAY
TSDN : THERMAL SHUTDOWN
BBM: BREAK BEFORE MAKE
T
ON
Principle of Operation
Detailed Description
The MAX17606 uses the synchronous nMOSFET’s body-
diode forward voltage to determine when to drive the
GATE pin high and turn on the nMOSFET. Whenever the
voltage across the nMOSFET goes 94mV (typ) below
For low and medium-power applications, the flyback
converter is the preferred choice due to its simplicity and
low cost. However, in high-output-current applications,
the high power dissipation and resulting need for thermal
management of the secondary diode rectifier, is a
concern. The MAX17606 eliminates this constraint by
allowing replacement of the secondary diode with a
synchronous rectifier nMOSFET. The use of an
nMOSFET as the secondary synchronous rectifier
reduces the power dissipation and improves the system
efficiency, while providing a higher deliverable output
current compared to a rectifier diode.
ground, GATE is pulled-up to V
. GATE is held high
DRV
for a minimum duration of 240ns (typ) to make the device
immune to ringing in the secondary current (caused by
transformer leakage inductance). This ringing should be
limited by using an RC snubber, RCD clamp, or both. This
ringing period should not last longer than 150ns.
Noting that the voltage across the MOSFET drain-source
terminals (V ) is equal to R
times the secondary
DS
DS(on)
current, the ideal point to turn-off the gate would be when
secondary current is zero. However, MOSFET
packageshaveasignificantinternalinductanceandthehigh
secondary di/dt through this lead inductance can create a
positive voltage across the MOSFET. Also, to account
for the turn-off propagation delay and to avoid the cross
conduction, it is required to turn-off the MOSFET when a
The device contains all the control and logic circuitry
needed to implement a secondary-side synchronous
rectifier in a flyback converter operating in DCM.
Essentially, by sensing the drain-to-source voltage of the
external nMOSFET, and turning on the nMOSFET with
the correct timing, the device emulates an ideal diode
rectifier. See Principle of Operation section for details.
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
positive current is flowing through the MOSFET. A series
resistor (R ) connected between drain of the exter-
Linear Regulator (VDRV)
DRAIN
The V powers internal LDO of the device. The regulated
IN
nal MOSFET to the IC DRN pin with precise internal
current source is used to program the turn-off trip point.
When the DRN pin goes above +30mV (typ), the gate is
pulled-down to GND. The following equation is used to
program the turn-off trip point,
output of the LDO is connected to the V
output voltage is 7V (typ) and has a current limit of 55mA
(typ). Connect a minimum of 2.2µF ceramic capacitor
. The LDO
DRV
between V
and GND, for the stable operation over
DRV
the full temperature range. Place this capacitor close to
the IC.
di
1.21
sec
dt
V
= 30mV −
×R
− L
×
LEAD
turn−off
DRAIN
R
TOFF
Programmable T
Pin Resistor (R
)
OFF
TOFF
After the synchronous MOSFET has turned off, we
observe a ringing across the drain to source due to voltage
oscillations caused by magnetizing inductance and the
MOSFET drain node capacitance. In some cases, this
ringing causes the DRN pin of the device to go 94mV
below ground. This may trigger the turn-on threshold
comparator and turn-on the gate pulse. To avoid this fault
triggering, every time the DRN pin goes above 0.87V, the
where,
R
TOFF
- The resistor connected between T
pin to GND.
OFF
R
- The resistor connected between the DRN pin
DRAIN
and drain of the MOSFET.
L
- The sum of lead inductance of the MOSFET
LEAD
package on source and drain.
di
sec
dt
2
device introduces a minimum T
time and blanks the
- is equal to V
/ (L
x K ); and K = N /N
sec PRI
OFF
OUT
PRI
next turn-on threshold comparison during this time. After
the minimum T is elapsed, next time the DRN pin
V
- RDS(on) times the secondary current at the
TURN-OFF
OFF
desired turn-off secondary current.
goes 94mV below ground the gate will be pulled high to
. The resistor connected between the T pin to
V
Refer to the MOSFET data sheet, or consult with the
MOSFET manufacturer, to determine the total inductance
for the specific MOSFET being used in the application.
DRV
OFF
GND sets the minimum T
time.
OFF
T
- 13 (typ)
OFF
R
=
TOFF
10.25
Supply Voltage (V )
IN
The MAX17606 has a wide input voltage range from 4.5V
where,
to 36V. When the output voltage is 5V and greater, V
OUT
can be directly used to drive V as shown in Figure 3. In
this configuration, connect a series resistor of 22Ω in VIN
R
- The resistor connected between the T
pin to
IN
TOFF
OFF
GND in kΩ.
path to limit the V
output short. For driving standard MOSFETS, rectified
drain voltage of the secondary synchronous MOSFET is
capacitor discharge current during
DRV
T
- The minimum T
time in ns.
OFF
OFF
ideal choice to drive V , when output voltage is 5V and
IN
lesser. In this configuration, connect a series resistor (R9)
in the V path to limit the current in the rectifier diode
IN
(D1) as shown in Figure 2.
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│ 7
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
DRN
0.87V
+30mV
-94mV
T
PROGRAMMED TO BLANK THE -VE
VOLTAGE DURING RINGING
OFF
GATE
tr
tf
td(off)
td(on)
T
OFF
PROGRAMMED
OFF-TIME
MINIMUM
ON-TIME
MIN TON
Figure 1. Timing Diagram of MAX17606:
3) The proper sensing of drain-to-source voltage across
the MOSFET is critical in this IC. The R should
PCB Layout guidelines
DRAIN
Careful PCB layout is critical to achieve clean and stable
operation. For a sample layout that ensures first-pass
success, refer to the MAX17606 evaluation kit layouts
available at www.maximintegrated.com.
be kelvin connected to the drain of the Synchronous
MOSFET. The source pin of the MOSFET should be
kelvin connected to the IC GND pin as well.
4) Connect the R
resistor directly between T
OFF
TOFF
Follow the below guidelines for good PCB layout:
pin and the IC GND pin. The return path should not
be connected to ground plane.
1) The loop area of paths carrying the pulsed currents
should be kept as small as possible.
2)
V and V bypass capacitors should be connected
DRV IN
close to the respective pins and returned to GND pin
of the IC. This loop area should be as small as possible.
Maxim Integrated
│ 8
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Typical Application Circuit
V
V
IN
OUT
T1
5V,3A
C1
4.7µF
x4
C9
100µF
6x
C4
1nF
C2
0.1µF
IN
R9
4.7Ω
PGND
R5
47Ω
D1
0
SS
RT
U1
C10
2.2µF
MAX17597
R10
2.74kΩ
R1
49.9kΩ
V
IN
0
DRN
Q1
N
DRV
CS
T
OFF
R6
220Ω
Q2
R14
100kΩ
GATE
U2
V
IN
C7
2.2µF
MAX17606
C5
R7
0.02Ω
GND
1nF
EN/UVLO
V
DRV
0
0
DITHER
OVI
V
R11
470Ω
OUT
U3
4
3
1
2
V
SGND
EP
DRV
FB
R12
1.5kΩ
C8
0.22µF
C6
2.2µF
COMP
R4
22kΩ
R2
49.9kΩ
U4
R13
487Ω
C3
22nF
R3
10.5kΩ
R8
470kΩ
T1-WE750342955
Q1-FDMS86102LZ
Q2-BSZ040N04LSG
0
Figure 2. Typical Application Circuit for 24V to 5V, 3A Isolated Flyback Converter
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Typical Application Circuit
V
V
IN
OUT
T1
5V,3A
C1
4.7µF
x4
C9
100µF
6x
C4
1nF
R9
22Ω
C2
0.1µF
IN
PGND
R5
47Ω
0
SS
RT
U1
C10
2.2µF
MAX17597
R10
2.74kΩ
R1
49.9kΩ
V
IN
0
DRN
Q1
NDRV
T
OFF
R6
220Ω
Q2
R14
100kΩ
GATE
U2
V
IN
CS
C7
2.2µF
MAX17606
C5
R7
0.02Ω
GND
1nF
EN/UVLO
VDRV
0
0
DITHE
OVI
R
V
R11
470Ω
OUT
U3
4
3
1
2
V
SGND
EP
DRV
R12
1.5kΩ
C8
0.22µF
C6
2.2µF
COMP
FB
R4
22kΩ
R2
49.9kΩ
U4
R13
487Ω
C3
22nF
R3
10.5kΩ
R8
470kΩ
T1-WE750342955
Q1-FDMS86102LZ
Q2-BSZ040N04LSG
0
Figure 3. 24V to 5V, 3A Isolated Flyback Circuit, MAX17606 V Driven From V
IN
OUT
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Ordering Information
Package Information
For the latest package outline information and land patterns
PART
TEMP RANGE
PIN-PACKAGE
(footprints), go to www.maximintegrated.com/packages. Note
that a “+”, “#”, or “-” in the package code indicates RoHS status
only. Package drawings may show a different suffix character, but
the drawing pertains to the package regardless of RoHS status.
6-LEAD THIN
SOT23
MAX17606AZT+
-40°C to +125°C
+Denotes a lead (Pb)-free/RoHS-compliant package
PACKAGE
PACKAGE
OUTLINE
LAND
TYPE
CODE
NO.
PATTERN NO.
Chip Information
PROCESS: BCD
TSOT23
Z6+1
21-0114
90-0242
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MAX17606
Secondary-Side Synchronous MOSFET Driver
for Flyback Converters
Revision History
REVISION REVISION
PAGES
DESCRIPTION
CHANGED
NUMBER
DATE
0
10/15
Initial release
—
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.
©
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.
2015 Maxim Integrated Products, Inc.
│ 12
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SI9135_11
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SI9136_11
Multi-Output Power-Supply ControllerWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130CG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130LG-T1-E3
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9130_11
Pin-Programmable Dual Controller - Portable PCsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137DB
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9137LG
Multi-Output, Sequence Selectable Power-Supply Controller for Mobile ApplicationsWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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SI9122E
500-kHz Half-Bridge DC/DC Controller with Integrated Secondary Synchronous Rectification DriversWarning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
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VISHAY
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