MAX17606 [MAXIM]

Secondary-Side Synchronous MOSFET Driver for Flyback Converters;
MAX17606
型号: MAX17606
厂家: MAXIM INTEGRATED PRODUCTS    MAXIM INTEGRATED PRODUCTS
描述:

Secondary-Side Synchronous MOSFET Driver for Flyback Converters

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MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
General Description  
Benefits and Features  
Wide 4.5V to 36V Input  
2A/4A Peak Source/Sink Gate Drive Currents  
Suitable for Discontinuous Conduction Mode (DCM),  
Border Conduction Mode (BCM)  
320µA (typ) Low Quiescent Current  
Programmable Turn-Off Trip Point  
The MAX17606 is a secondary-side synchronous driver  
and controller specifically designed for the isolated flyback  
topology operating in Discontinuous Conduction Mode  
(DCM) or Border Conduction Mode (BCM). By replacing  
the secondary diode with a MOSFET, the device improves  
the efficiency and simplifies thermal management. The  
7V V  
of the device makes it suitable for switching  
DRV  
Programmable Minimum Off-Time to Handle DCM  
both logic-level and standard MOSFETs used for flyback  
synchronous rectification. The 36V input voltage allows  
it to drive from either the output voltage or rectified drain  
voltage of the secondary MOSFET. Programmable minimum  
on and off-times provide flexibility needed to handle  
transformer parasitic element-related ringing in a robust  
manner. With 2A/4A source/sink currents, the MAX17606  
Ringing  
Thermal-Shutdown Protection  
6-Lead SOT-23 Package  
Applications  
● High-Efficiency Isolated Flyback Converters  
is ideal for driving low R  
gate transition times.  
power MOSFETs with fast  
DS(on)  
Ordering Information appears at end of data sheet.  
Typical Application Circuit for 24V to 5V, 3A Isolated Flyback Converter  
V
V
IN  
OUT  
T1  
5V,3A  
C1  
4.7µF  
x4  
C9  
100µF  
6x  
C4  
1nF  
C2  
0.1µF  
IN  
R9  
4.7  
PGND  
R5  
47Ω  
D1  
0
SS  
RT  
U1  
C10  
2.2µF  
MAX17597  
R10  
2.74kΩ  
R1  
49.9kΩ  
V
IN  
0
DRN  
Q1  
N
DRV  
CS  
T
OFF  
R6  
220Ω  
Q2  
R14  
100kΩ  
GATE  
U2  
V
IN  
C7  
2.2µF  
MAX17606  
C5  
R7  
0.02Ω  
GND  
1nF  
EN/UVLO  
V
DRV  
0
0
DITHER  
OVI  
V
R11  
470Ω  
OUT  
U3  
4
3
1
2
V
SGND  
EP  
DRV  
FB  
R12  
1.5kΩ  
C8  
0.22µF  
C6  
2.2µF  
COMP  
R4  
22kΩ  
R2  
49.9kΩ  
U4  
R13  
487Ω  
C3  
22nF  
R3  
10.5kΩ  
R8  
470kΩ  
T1-WE750342955  
Q1-FDMS86102LZ  
Q2-BSZ040N04LSG  
0
19-7758; Rev 0; 10/15  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Absolute Maximum Ratings  
V
T
to GND ..........................................................-0.3V to +40V  
to GND .........................................................-0.3V to +6V  
Continuous Power Dissipation (multilayer board)  
IN  
(T = +70°C, derate 9.1mW/°C above +70°C.)........727.3mW  
OFF  
A
DRN (low impedance source) to GND .................-0.3V to +70V  
DRN to GND (up to 5mA of pull out current) .......... Self-Limiting  
GATE to GND ..........................................-0.3V to VDRV + 0.3V  
Operating Temperature Range ........................ -40°C to +125°C  
Junction Temperature ................................................... +150°C  
Storage Temperature Range ........................... -40°C to +150°C  
Soldering Temperature (reflow) .................................... +260°C  
V
to GND ..............................-0.3V to Min (V + 0.3, 18)V  
DRV  
Continuous Power Dissipation (single-layer board)  
(T = +70°C, derate 2.7mW/°C above +70°C.)........219.1mW  
IN  
A
(Note 1)  
Package Thermal Characteristics  
SOT-23 6L  
Junction-to-Ambient Thermal Resistance (θ ) ........110°C/W  
Junction-to-Case Thermal Resistance (θ )...............50°C/W  
JC  
JA  
Note 1: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-layer  
board. For detailed information on package thermal considerations, refer to www.maximintegrated.com/thermal-tutorial.  
Electrical Characteristics  
V
= 12V, C  
= 100nF, C  
= 2.2μF, GATE = OPEN, DRN = 0V, GND = 0V, R  
= 40.2kΩ, T = T = -40°C to +125°C, unless  
TOFF A J  
IN  
VIN  
VDRV  
otherwise noted. Typical values are at T = +25°C. All voltages are referenced to GND, unless otherwise noted. (Note 2)  
A
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
V
V
V
IN  
IN  
IN  
Operating Range  
Quiescent Current  
V
4.5  
36  
V
IN  
I
DRN = 2V, no switching  
320  
600  
450  
µA  
Q
DRN switching -150mV to +2V,  
300kHz, 50% duty cycle  
V
Switching Current  
I
µA  
IN  
SW  
V
V
V
V
V
DRV  
Regulation Voltage  
Regulation Voltage  
Dropout Voltage  
Current Limit  
V
1mA ≤ V ≤ 20mA  
DRV  
6.6  
6.6  
7.0  
7.0  
4.3  
55  
7.4  
7.4  
V
V
DRV  
DRV  
DRV  
DRV  
DRV_LOAD  
V
I
I
= 1mA; 8.5V ≤ V ≤ 36V  
IN  
DRV_LINE  
VDRV  
VDRV  
V
= 20mA ,V = 4.5V  
4.1  
V
DRV-DO  
IN  
I
V
V
V
= 6V; V = 8.5V  
IN  
26.5  
4.0  
mA  
V
VDRV  
DRV  
DRV  
DRV  
V
rising  
falling  
4.25  
4
4.47  
4.25  
DRV-UVR  
DRV-UVH  
V
Undervoltage  
DRV  
Lockout  
V
3.75  
V
DRN  
Maximum Drain Operating  
Voltage  
V
60  
V
DRN  
GATE Turn-On Detect  
Threshold  
V
-150  
24  
-94  
30  
mV  
mV  
GATE-ON  
GATE Turn-Off Detect  
Threshold  
V
35  
GATE-OFF  
DRN Rising Threshold for  
V
DRN-TOFF_  
EN  
DRN voltage rising  
= 40.2KΩ, DRN = 0V  
0.87  
30.5  
V
T
Enable  
OFF  
DRN Bias Current  
IDRN  
R
26.5  
34.5  
µA  
TOFF  
Maxim Integrated  
2  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Electrical Characteristics (continued)  
V
= 12V, C  
= 100nF, C  
= 2.2μF, GATE = OPEN, DRN = 0V, GND = 0V, R  
= 40.2kΩ, T = T = -40°C to +125°C, unless  
TOFF A J  
IN  
VIN  
VDRV  
otherwise noted. Typical values are at T = +25°C. All voltages are referenced to GND, unless otherwise noted. (Note 2)  
A
PARAMETER  
SYMBOL  
CONDITIONS  
MIN  
TYP  
MAX  
UNITS  
SWITCHING CHARACTERISTICS (GATE, T  
)
OFF  
GATE Output Pullup  
Resistance  
R
V
V
= V  
7V, I  
= -50mA  
1.5  
0.5  
2.8  
0.9  
ON-P  
ON-N  
IN  
DRV  
GATE  
GATE Output Pulldown  
Resistance  
R
= 7V, I  
= 190mA  
IN  
GATE  
GATE Peak Source Current  
GATE Peak Sink Current  
Turn-On Propagation Delay  
Turn-Off Propagation Delay  
I
2
4
A
G-SOURCE  
I
A
G-SINK  
T
DRN falling to gate rising  
DRN rising to gate falling  
26  
32  
40  
50  
ns  
ns  
ns  
ns  
ns  
ns  
ON-D  
T
OFF-D  
T
Programmable range  
T
115  
315  
1550  
540  
2000  
330  
OFF  
OFF  
OFF  
R
R
= 40.2kΩ  
= 150kΩ  
425  
1550  
240  
TOFF  
TOFF  
T
Accuracy  
1150  
150  
Minimum On-Time  
T
ON_MIN  
Note 2: Limits are 100% tested at T = +25°C. Limits over the temperature range and relevant supply voltage range are guaranteed  
A
by design and characterization.  
Maxim Integrated  
3  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Typical Operating Characteristics  
V
=13V,V  
= 0V, R  
= 100kΩ, R  
= 2.74kΩ, C  
= 2.2µF, T = +25°C, unless otherwise noted.  
VDRV A  
IN  
GND  
TOFF  
DRN  
GATE RISE AND FALL TIME vs. CHARGE  
EFFICIENCY vs. LOAD CURRENT  
EFFICIENCY COMPARISON  
toc1  
toc2  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
100  
95  
90  
85  
80  
75  
70  
65  
60  
55  
120  
100  
80  
60  
40  
20  
0
VIN = 24V,WITH  
MOSFET  
VIN = 18V  
VIN = 24V,WITH DIODE  
RISE TIME  
VIN = 36V  
VIN = 24V  
MOSFET-BSZ040N04LSG  
DIODE-STPS30M60DJF-TR  
FALL TIME  
SEE FIGURE 2 TYPICAL  
APPLICATION CIRCUIT  
50  
0
50  
0
1000  
2000  
3000  
1000  
2000  
3000  
0
50  
100  
150  
LOAD CURRENT (mA)  
LOAD CURRENT (mA)  
CHARGE (nC)  
FULL-LOAD STEADY-STATE WAVEFORM  
FOR DCM OPERATION, (VIN = 24V, IOUT = 3A)  
QUIESCENT CURRENT (IQ)  
vs. TEMPERATURE  
V
vs. TEMPERATURE  
DRV  
toc4  
380  
360  
340  
320  
300  
280  
260  
240  
220  
200  
7.40  
7.20  
7.00  
6.80  
6.60  
V
DRAIN  
5V/div  
GATE  
SEE FIGURE 2 TYPICAL  
APPLICATION CIRCUIT  
-40 -20  
0
20 40 60 80 100 120 140  
TEMPERATURE (°C)  
1µS/div  
-40 -20  
0
20 40 60 80 100 120 140  
TEMPERATURE (°C)  
5V OUTPUT, 3A LOAD CURRENT  
FULL-LOAD, STEADY-STATE WAVEFORM  
FOR BCM OPERATION, VIN = 18V, IOUT = 3A  
LOAD TRANSIENT RESPONSE  
(LOAD CURRENT FROM 1.5A TO 3A ON 5V)  
toc9  
BODE PLOT  
200mV/div  
VOUT(AC)  
V
DRAIN  
5V/div  
SEE FIGURE 2 TYPICAL  
APPLICATION CIRCUIT  
1A/div  
GATE  
SEE FIGURE 2 TYPICAL  
APPLICATION CIRCUIT  
F
= 7.622kHz  
CR  
IOUT  
PHASE MARGIN = 73.082°  
SEE FIGURE 2 TYPICAL  
APPLICATION CIRCUIT  
1mS/div  
1µS/div  
Maxim Integrated  
4  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Pin Configurations  
TOP VIEW  
+
V
1
2
3
6
5
4
T
OFF  
IN  
MAX17606  
GND  
DRN  
V
DRV  
GATE  
SOT-23 6L  
Pin Description  
PIN  
NAME  
FUNCTION  
1
V
Input Voltage. Connect at least 2.2µF X7R ceramic capacitor from V to GND for bypassing.  
IN  
IN  
IC Ground. The external MOSFET source should be kelvin connected to this pin. See the  
MAX17606 EV kit PCB for example layout.  
2
GND  
Drain Sense Pin of the External MOSFET. Connect the external MOSFET drain to this pin through a  
resistor. See the MAX17606 EV kit PCB for example layout.  
3
4
5
6
DRN  
GATE  
External nMOSFET GATE Driver Output.  
LDO Output and Driver Input. Connect a 2.2µF bypass capacitor from V  
pin to GND, as close  
DRV  
V
DRV  
OFF  
as possible to the IC. See the MAX17606 EV kit PCB for example layout.  
T
Connect a resistor from T to GND to set the programmable minimum off time.  
OFF  
Maxim Integrated  
5  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Functional (or Block) Diagram  
V
IN  
1.21V  
V
DRV  
V
LDO  
PRE REG  
INTA  
TSDN  
608mV  
MAX17606  
V
INTA  
INTERNAL  
SUPPLY  
T
OFF  
GATE = HIGH  
0.87V  
POK  
MIN  
DELAY  
DRN  
T
OFF  
GATE  
BBM  
4V  
4.25V  
LOGIC  
-94mV  
30mV  
0
1
GATE  
GND  
MIN  
DELAY  
TSDN : THERMAL SHUTDOWN  
BBM: BREAK BEFORE MAKE  
T
ON  
Principle of Operation  
Detailed Description  
The MAX17606 uses the synchronous nMOSFET’s body-  
diode forward voltage to determine when to drive the  
GATE pin high and turn on the nMOSFET. Whenever the  
voltage across the nMOSFET goes 94mV (typ) below  
For low and medium-power applications, the flyback  
converter is the preferred choice due to its simplicity and  
low cost. However, in high-output-current applications,  
the high power dissipation and resulting need for thermal  
management of the secondary diode rectifier, is a  
concern. The MAX17606 eliminates this constraint by  
allowing replacement of the secondary diode with a  
synchronous rectifier nMOSFET. The use of an  
nMOSFET as the secondary synchronous rectifier  
reduces the power dissipation and improves the system  
efficiency, while providing a higher deliverable output  
current compared to a rectifier diode.  
ground, GATE is pulled-up to V  
. GATE is held high  
DRV  
for a minimum duration of 240ns (typ) to make the device  
immune to ringing in the secondary current (caused by  
transformer leakage inductance). This ringing should be  
limited by using an RC snubber, RCD clamp, or both. This  
ringing period should not last longer than 150ns.  
Noting that the voltage across the MOSFET drain-source  
terminals (V ) is equal to R  
times the secondary  
DS  
DS(on)  
current, the ideal point to turn-off the gate would be when  
secondary current is zero. However, MOSFET  
packageshaveasignificantinternalinductanceandthehigh  
secondary di/dt through this lead inductance can create a  
positive voltage across the MOSFET. Also, to account  
for the turn-off propagation delay and to avoid the cross  
conduction, it is required to turn-off the MOSFET when a  
The device contains all the control and logic circuitry  
needed to implement a secondary-side synchronous  
rectifier in a flyback converter operating in DCM.  
Essentially, by sensing the drain-to-source voltage of the  
external nMOSFET, and turning on the nMOSFET with  
the correct timing, the device emulates an ideal diode  
rectifier. See Principle of Operation section for details.  
Maxim Integrated  
6  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
positive current is flowing through the MOSFET. A series  
resistor (R ) connected between drain of the exter-  
Linear Regulator (VDRV)  
DRAIN  
The V powers internal LDO of the device. The regulated  
IN  
nal MOSFET to the IC DRN pin with precise internal  
current source is used to program the turn-off trip point.  
When the DRN pin goes above +30mV (typ), the gate is  
pulled-down to GND. The following equation is used to  
program the turn-off trip point,  
output of the LDO is connected to the V  
output voltage is 7V (typ) and has a current limit of 55mA  
(typ). Connect a minimum of 2.2µF ceramic capacitor  
. The LDO  
DRV  
between V  
and GND, for the stable operation over  
DRV  
the full temperature range. Place this capacitor close to  
the IC.  
di  
1.21  
sec  
dt  
V
= 30mV −  
×R  
L  
×
LEAD  
turnoff  
DRAIN  
R
TOFF  
Programmable T  
Pin Resistor (R  
)
OFF  
TOFF  
After the synchronous MOSFET has turned off, we  
observe a ringing across the drain to source due to voltage  
oscillations caused by magnetizing inductance and the  
MOSFET drain node capacitance. In some cases, this  
ringing causes the DRN pin of the device to go 94mV  
below ground. This may trigger the turn-on threshold  
comparator and turn-on the gate pulse. To avoid this fault  
triggering, every time the DRN pin goes above 0.87V, the  
where,  
R
TOFF  
- The resistor connected between T  
pin to GND.  
OFF  
R
- The resistor connected between the DRN pin  
DRAIN  
and drain of the MOSFET.  
L
- The sum of lead inductance of the MOSFET  
LEAD  
package on source and drain.  
di  
sec  
dt  
2
device introduces a minimum T  
time and blanks the  
- is equal to V  
/ (L  
x K ); and K = N /N  
sec PRI  
OFF  
OUT  
PRI  
next turn-on threshold comparison during this time. After  
the minimum T is elapsed, next time the DRN pin  
V
- RDS(on) times the secondary current at the  
TURN-OFF  
OFF  
desired turn-off secondary current.  
goes 94mV below ground the gate will be pulled high to  
. The resistor connected between the T pin to  
V
Refer to the MOSFET data sheet, or consult with the  
MOSFET manufacturer, to determine the total inductance  
for the specific MOSFET being used in the application.  
DRV  
OFF  
GND sets the minimum T  
time.  
OFF  
T
- 13 (typ)  
OFF  
R
=
TOFF  
10.25  
Supply Voltage (V )  
IN  
The MAX17606 has a wide input voltage range from 4.5V  
where,  
to 36V. When the output voltage is 5V and greater, V  
OUT  
can be directly used to drive V as shown in Figure 3. In  
this configuration, connect a series resistor of 22Ω in VIN  
R
- The resistor connected between the T  
pin to  
IN  
TOFF  
OFF  
GND in kΩ.  
path to limit the V  
output short. For driving standard MOSFETS, rectified  
drain voltage of the secondary synchronous MOSFET is  
capacitor discharge current during  
DRV  
T
- The minimum T  
time in ns.  
OFF  
OFF  
ideal choice to drive V , when output voltage is 5V and  
IN  
lesser. In this configuration, connect a series resistor (R9)  
in the V path to limit the current in the rectifier diode  
IN  
(D1) as shown in Figure 2.  
Maxim Integrated  
7  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
DRN  
0.87V  
+30mV  
-94mV  
T
PROGRAMMED TO BLANK THE -VE  
VOLTAGE DURING RINGING  
OFF  
GATE  
tr  
tf  
td(off)  
td(on)  
T
OFF  
PROGRAMMED  
OFF-TIME  
MINIMUM  
ON-TIME  
MIN TON  
Figure 1. Timing Diagram of MAX17606:  
3) The proper sensing of drain-to-source voltage across  
the MOSFET is critical in this IC. The R should  
PCB Layout guidelines  
DRAIN  
Careful PCB layout is critical to achieve clean and stable  
operation. For a sample layout that ensures first-pass  
success, refer to the MAX17606 evaluation kit layouts  
available at www.maximintegrated.com.  
be kelvin connected to the drain of the Synchronous  
MOSFET. The source pin of the MOSFET should be  
kelvin connected to the IC GND pin as well.  
4) Connect the R  
resistor directly between T  
OFF  
TOFF  
Follow the below guidelines for good PCB layout:  
pin and the IC GND pin. The return path should not  
be connected to ground plane.  
1) The loop area of paths carrying the pulsed currents  
should be kept as small as possible.  
2)  
V and V bypass capacitors should be connected  
DRV IN  
close to the respective pins and returned to GND pin  
of the IC. This loop area should be as small as possible.  
Maxim Integrated  
8  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Typical Application Circuit  
V
V
IN  
OUT  
T1  
5V,3A  
C1  
4.7µF  
x4  
C9  
100µF  
6x  
C4  
1nF  
C2  
0.1µF  
IN  
R9  
4.7  
PGND  
R5  
47Ω  
D1  
0
SS  
RT  
U1  
C10  
2.2µF  
MAX17597  
R10  
2.74kΩ  
R1  
49.9kΩ  
V
IN  
0
DRN  
Q1  
N
DRV  
CS  
T
OFF  
R6  
220Ω  
Q2  
R14  
100kΩ  
GATE  
U2  
V
IN  
C7  
2.2µF  
MAX17606  
C5  
R7  
0.02Ω  
GND  
1nF  
EN/UVLO  
V
DRV  
0
0
DITHER  
OVI  
V
R11  
470Ω  
OUT  
U3  
4
3
1
2
V
SGND  
EP  
DRV  
FB  
R12  
1.5kΩ  
C8  
0.22µF  
C6  
2.2µF  
COMP  
R4  
22kΩ  
R2  
49.9kΩ  
U4  
R13  
487Ω  
C3  
22nF  
R3  
10.5kΩ  
R8  
470kΩ  
T1-WE750342955  
Q1-FDMS86102LZ  
Q2-BSZ040N04LSG  
0
Figure 2. Typical Application Circuit for 24V to 5V, 3A Isolated Flyback Converter  
Maxim Integrated  
9  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Typical Application Circuit  
V
V
IN  
OUT  
T1  
5V,3A  
C1  
4.7µF  
x4  
C9  
100µF  
6x  
C4  
1nF  
R9  
22  
C2  
0.1µF  
IN  
PGND  
R5  
47Ω  
0
SS  
RT  
U1  
C10  
2.2µF  
MAX17597  
R10  
2.74kΩ  
R1  
49.9kΩ  
V
IN  
0
DRN  
Q1  
NDRV  
T
OFF  
R6  
220Ω  
Q2  
R14  
100kΩ  
GATE  
U2  
V
IN  
CS  
C7  
2.2µF  
MAX17606  
C5  
R7  
0.02Ω  
GND  
1nF  
EN/UVLO  
VDRV  
0
0
DITHE  
OVI  
R
V
R11  
470Ω  
OUT  
U3  
4
3
1
2
V
SGND  
EP  
DRV  
R12  
1.5kΩ  
C8  
0.22µF  
C6  
2.2µF  
COMP  
FB  
R4  
22kΩ  
R2  
49.9kΩ  
U4  
R13  
487Ω  
C3  
22nF  
R3  
10.5kΩ  
R8  
470kΩ  
T1-WE750342955  
Q1-FDMS86102LZ  
Q2-BSZ040N04LSG  
0
Figure 3. 24V to 5V, 3A Isolated Flyback Circuit, MAX17606 V Driven From V  
IN  
OUT  
Maxim Integrated  
10  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Ordering Information  
Package Information  
For the latest package outline information and land patterns  
PART  
TEMP RANGE  
PIN-PACKAGE  
(footprints), go to www.maximintegrated.com/packages. Note  
that a “+”, “#”, or “-” in the package code indicates RoHS status  
only. Package drawings may show a different suffix character, but  
the drawing pertains to the package regardless of RoHS status.  
6-LEAD THIN  
SOT23  
MAX17606AZT+  
-40°C to +125°C  
+Denotes a lead (Pb)-free/RoHS-compliant package  
PACKAGE  
PACKAGE  
OUTLINE  
LAND  
TYPE  
CODE  
NO.  
PATTERN NO.  
Chip Information  
PROCESS: BCD  
TSOT23  
Z6+1  
21-0114  
90-0242  
Maxim Integrated  
11  
www.maximintegrated.com  
MAX17606  
Secondary-Side Synchronous MOSFET Driver  
for Flyback Converters  
Revision History  
REVISION REVISION  
PAGES  
DESCRIPTION  
CHANGED  
NUMBER  
DATE  
0
10/15  
Initial release  
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642, or visit Maxim Integrated’s website at www.maximintegrated.com.  
Maxim Integrated cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim Integrated product. No circuit patent licenses  
are implied. Maxim Integrated reserves the right to change the circuitry and specifications without notice at any time. The parametric values (min and max limits)  
shown in the Electrical Characteristics table are guaranteed. Other parametric values quoted in this data sheet are provided for guidance.  
©
Maxim Integrated and the Maxim Integrated logo are trademarks of Maxim Integrated Products, Inc.  
2015 Maxim Integrated Products, Inc.  
12  

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