MAX19998 [MAXIM]
SiGe, High-Linearity, 2300MHz to 4000MHz Downconversion Mixer with LO Buffer; 的SiGe ，高线性度， 2300MHz至4000MHz的下变频混频器，带有LO缓冲器
| 型号： | MAX19998 |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | SiGe, High-Linearity, 2300MHz to 4000MHz Downconversion Mixer with LO Buffer |
| 文件： | 总28页 (文件大小：4987K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-4827; Rev 0; 10/09
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
General Description
Features
S 2300MHz to 4000MHz RF Frequency Range
The MAX19998 single, high-linearity downconversion
mixer provides 8.7dB of conversion gain, +24.3dBm
input IP3, +11.3dBm 1dB input compression point,
and a noise figure of 9.7dB for 2300MHz to 4000MHz
WiMAXK, LTE, and MMDS receiver applications. With
an ultra-wide LO 2600MHz to 4300MHz frequency
range, the MAX19998 can be used in either low-side
or high-side LO injection architectures for virtually all
2.5GHz and 3.5GHz applications. For a 2.5GHz vari-
ant tuned specifically for high-side injection, refer to the
MAX19996A.
S 2600MHz to 4300MHz LO Frequency Range
S 50MHz to 500MHz IF Frequency Range
S 8.7dB Conversion Gain
S 9.7dB Noise Figure
S +24.3dBm Typical Input IP3
S +11.3dBm Typical Input 1dB Compression Point
S 67dBc Typical 2RF - 2LO Spurious Rejection at
P
RF
= -10dBm
In addition to offering excellent linearity and noise per-
formance, the MAX19998 also yields a high level of
component integration. This device includes a double-
balanced passive mixer core, an IF amplifier, and an LO
buffer. On-chip baluns are also integrated to allow for
single-ended RF and LO inputs. The MAX19998 requires
a nominal LO drive of 0dBm, and supply current is typi-
S Integrated LO Buffer
S Integrated RF and LO Baluns for Single-Ended
Inputs
S Low -3dBm to +3dBm LO Drive
S Pin Compatible with the MAX19996/MAX19996A
2000MHz to 3900MHz Mixers
cally 230mA at V
= 5.0V or 150mA at V
= 3.3V.
CC
CC
S Pin Similar with the MAX9984/MAX9986/
MAX9986A Series of 400MHz to 1000MHz Mixers
and the MAX9993/MAX9994/MAX9996 Series of
1700MHz to 2200MHz Mixers
The MAX19998 is pin compatible with the MAX19996/
MAX19996A 2000MHz to 3900MHz mixer family. The
device is also pin similar with the MAX9984/MAX9986/
MAX9986A 400MHz to 1000MHz mixers and the
MAX9993/MAX9994/MAX9996 1700MHz to 2200MHz
mixers, making this entire family of downconverters ideal
for applications where a common PCB layout is used for
multiple frequency bands.
S Single 5.0V or 3.3V Supply
S External Current-Setting Resistors Provide Option
for Operating Device in Reduced-Power/Reduced-
Performance Mode
The MAX19998 is available in a compact, 5mm x 5mm,
20-pin thin QFN with an exposed pad. Electrical perfor-
mance is guaranteed over the extended -40NC to +85NC
temperature range.
Ordering Information
Applications
2.5GHz WiMAX and LTE Base Stations
2.7GHz MMDS Base Stations
3.5GHz WiMAX and LTE Base Stations
Fixed Broadband Wireless Access
Wireless Local Loop
PART
TEMP RANGE
-40NC to +85NC
-40NC to +85NC
PIN-PACKAGE
20 Thin QFN-EP*
20 Thin QFN-EP*
MAX19998ETP+
MAX19998ETP+T
+Denotes a lead(Pb)-free/RoHS-compliant package.
*EP = Exposed pad.
T = Tape and reel.
Private Mobile Radios
Military Systems
WiMAX is a trademark of WiMAX Forum.
_______________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim Direct at 1-888-629-4642,
or visit Maxim’s website at www.maxim-ic.com.
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
ABSOLUTE MAXIMUM RATINGS
CC
IF+, IF-, LOBIAS, IFBIAS to GND............. -0.3V to (V
V
to GND..........................................................-0.3V to +5.5V
B
B
(Notes 2, 3)............................................................ +38NC/W
(Notes 1, 3)............................................................ +13NC/W
JA
+ 0.3V)
CC
JC
RF, LO Input Power.......................................................+12dBm
RF, LO Current
Operating Case Temperature Range
(Note 4).................................................. T = -40NC to +85NC
C
(RF and LO is DC shorted to GND through balun)........50mA
Continuous Power Dissipation (Note 1) .................................5W
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Note 1: Based on junction temperature T = T + (B x V
x I ). This formula can be used when the temperature of the
CC
J
C
JC
CC
exposed pad is known while the device is soldered down to a PCB. See the Applications Information section for details.
The junction temperature must not exceed +150NC.
Note 2: Junction temperature T = T + (B x V
x I ). This formula can be used when the ambient temperature of the PCB is
CC
J
A
JA
CC
known. The junction temperature must not exceed +150NC.
Note 3: Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to www.maxim-ic.com/thermal-tutorial.
Note 4: T is the temperature on the exposed pad of the package. T is the ambient temperature of the device and PCB.
C
A
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, R1 = 698ω, R2 = 604ω, V
= 4.75V to 5.25V, no input RF or LO signals. T = -40NC to +85NC, unless
C
CC
otherwise noted. Typical values are at V
= 5.0V, T = +25NC, all parameters are production tested.)
C
CC
PARAMETER
Supply Voltage
Supply Current
SYMBOL
CONDITIONS
MIN
TYP
5.0
MAX
5.25
247
UNITS
V
V
4.75
CC
CC
I
Total supply current
230
mA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, R1 = 845ω, R2 = 1.1kω, V
= 3.0V to 3.6V, no input RF or LO signals. T = -40NC to +85NC, unless oth-
C
CC
erwise noted. Typical values are at V
= 3.3V, T = +25NC, parameters are guaranteed by design, unless otherwise noted.) (Note 5)
C
CC
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
3.3
MAX
UNITS
V
V
3.0
3.6
CC
CC
Supply Current
I
Total supply current
150
mA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency Range
LO Frequency
SYMBOL
CONDITIONS
MIN
2300
2600
TYP
MAX
4000
4300
UNITS
MHz
f
(Notes 5, 6)
(Notes 5, 6)
RF
LO
f
MHz
Using a Mini-Circuits TC4-1W-17 4:1
transformer as defined in the Typical
Application Circuit, IF matching components
affect the IF frequency range (Notes 5, 6)
100
500
IF Frequency
LO Drive
f
MHz
dBm
IF
Using a Mini-Circuits TC4-1W-7A 4:1
transformer as defined in the Typical
Application Circuit, IF matching components
affect the IF frequency range (Notes 5, 6)
50
-3
250
+3
P
LO
0
2
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
LOW-SIDE LO INJECTION
= 3100MHz to 3900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 698ω, R2 = 604ω, V
= 4.75V to 5.25V, RF and LO ports
CC
are driven from 50I sources, P = -3dBm to +3dBm, P = -5dBm, f = 3100MHz to 3900MHz, f = 300MHz, f = 2800MHz to
LO
RF
RF
IF
LO
3600MHz, f > f , T = -40NC to +85NC. Typical values are for T = +25NC, V
= 5.0V, P = -5dBm, P = 0dBm, f = 3500MHz,
RF LO RF
RF
LO
C
C
CC
f
= 3200MHz, f = 300MHz. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
IF
LO
PARAMETER
SYMBOL
CONDITIONS
= +25NC (Notes 8, 9)
MIN
TYP
MAX
UNITS
Small-Signal Conversion Gain
Gain Variation vs. Frequency
G
C
T
7.6
8.7
9.4
dB
C
f
= 3100MHz to 3900MHz, any 100MHz
band
RF
0.15
0.3
DG
dB
C
f
= 3100MHz to 3900MHz, any 200MHz
band
RF
Conversion Gain Temperature
Coefficient
f
T
= 3100MHz to 3900MHz,
= -40NC to +85NC
RF
TC
-0.01
11.4
24.3
dB/NC
dBm
dBm
CG
C
Input 1dB Compression Point
IP
(Note 10)
10.0
22
1dB
f
- f
= 1MHz, P
= P
= -5dBm/tone,
RF1 RF2
RF1
RF2
Third-Order Input Intercept Point
IIP3
T
= +25NC (Note 9)
C
f
P
= 3100MHz to 3900MHz, f
- f
= 1MHz,
RF
RF1 RF2
IIP3 Variation with T
Q0.2
dBm
dB
C
= P = -5dBm/tone, T = -40NC to +85NC
RF2 C
RF1
No blockers present (Note 5)
9.7
9.7
12.5
11.0
Single-Sideband Noise Figure
NF
SSB
No blockers present, T = +25NC (Note 5)
C
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
TC
0.018
dB/NC
NF
T
= -40NC to +85NC
C
+8dBm blocker tone applied to RF port,
f
f
= 3500MHz, f = 3200MHz,
LO
RF
Noise Figure Under Blocking
NF
21
25
dB
B
= 3750MHz, P = 0dBm,
BLOCKER
LO
V
= +5.0V, T = +25NC (Notes 5, 11)
C
CC
P
P
P
P
= -10dBm (Note 5)
= -5dBm (Note 9)
= -10dBm (Note 5)
= -5dBm (Note 9)
63
58
80
70
67
62
85
75
RF
RF
RF
RF
2RF - 2LO Spur Rejection
3RF - 3LO Spur Rejection
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
2 x 2
3 x 3
f
f
= f + 150MHz
dBc
dBc
dB
dB
I
SPUR
LO
= f + 100MHz
SPUR
LO
LO on and IF terminated into a matched
impedance
RL
RL
25
16
RF
LO
IF
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s IF
outputs
Z
200
20
f
= 450MHz,
RF terminated into 50I, LO
driven by 50Isource, IF
transformed to 50Iusing
external components shown
in the Typical Application
Circuit. See the Typical
Operating Characteristics
for performance vs. inductor
values.
IF
L1 = L2 = 120nH
f
= 350MHz,
IF
20
L1 = L2 = 270nH
IF Output Return Loss
RL
dB
IF
f
= 300MHz,
IF
20
L1 = L2 = 390nH
_______________________________________________________________________________________
3
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
LOW-SIDE LO INJECTION (continued)
= 3100MHz to 3900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 698ω, R2 = 604ω, V
= 4.75V to 5.25V, RF and LO ports
CC
are driven from 50I sources, P = -3dBm to +3dBm, P = -5dBm, f = 3100MHz to 3900MHz, f = 300MHz, f = 2800MHz to
LO
RF
RF
IF
LO
3600MHz, f > f , T = -40NC to +85NC. Typical values are for T = +25NC, V
= 5.0V, P = -5dBm, P = 0dBm, f = 3500MHz,
RF LO RF
RF
LO
C
C
CC
f
= 3200MHz, f = 300MHz. All parameters are guaranteed by design and characterization, unless otherwise noted.) (Note 7)
IF
LO
PARAMETER
SYMBOL
CONDITIONS
= 3500MHz, P = +3dBm (Note 9)
MIN
TYP
MAX
UNITS
RF-to-IF Isolation
f
f
27
29.5
dB
RF
LO
LO
= 2800MHz to 3600MHz, P = +3dBm
LO
LO Leakage at RF Port
-26
dBm
(Note 9)
2LO Leakage at RF Port
LO Leakage at IF Port
P
LO
P
LO
= +3dBm
-29
-22
dBm
dBm
= +3dBm (Note 9)
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
LOW-SIDE LO INJECTION
= 3100MHz to 3900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 845ω, R2 = 1.1kω, RF and LO ports are driven from 50I
sources, f > f . Typical values are for T = +25NC, V
= 300MHz, unless otherwise noted.) (Note 7)
= 3.3V, P
= -5dBm, P = 0dBm, f = 3500MHz, f = 3200MHz, f
LO RF LO IF
RF
LO
C
CC
RF
CONDITIONS
= 3100MHz to 3900MHz, any 100MHz
PARAMETER
SYMBOL
MIN
TYP
MAX
UNITS
Small-Signal Conversion Gain
G
8.4
dB
C
f
RF
Gain Variation vs. Frequency
DG
0.15
dB
C
band
Conversion Gain Temperature
Coefficient
f
T
= 3100MHz to 3900MHz,
= -40NC to +85NC
RF
TC
-0.01
dB/NC
CG
C
Input 1dB Compression Point
Third-Order Input Intercept Point
IP
IIP3
(Note 10)
- f
7.7
20.1
dBm
dBm
1dB
f
= 1MHz, P
= P
= -5dBm/tone
= -5dBm/tone,
RF1 RF2
RF1
RF2
f
- f
= 1MHz, P
= P
RF1 RF2
RF1
RF2
IIP3 Variation with T
Q0.2
9.3
dB
dB
C
T
= -40NC to +85NC
C
Single-Sideband Noise Figure
NF
No blockers present
Single sideband, no blockers present,
SSB
Noise Figure Temperature
Coefficient
TC
0.018
dB/NC
NF
T
= -40NC to +85NC
C
P
P
P
P
= -10dBm
= -5dBm
= -10dBm
= -5dBm
64
59
74
64
RF
RF
RF
RF
2RF - 2LO Spur Rejection
3RF - 3LO Spur Rejection
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
2 x 2
3 x 3
f
f
= f + 150MHz
dBc
dBc
dB
dB
I
SPUR
LO
= f + 100MHz
SPUR
LO
LO on and IF terminated into a matched
impedance
RL
RL
30
20
RF
LO
IF
RF and IF terminated into a matched imped-
ance
Nominal differential impedance at the IC’s IF
outputs
Z
200
4
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
3.3V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
LOW-SIDE LO INJECTION (continued)
= 3100MHz to 3900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 845ω, R2 = 1.1kω, RF and LO ports are driven from 50I
sources, f > f . Typical values are for T = +25NC, V
= 3.3V, P
= -5dBm, P = 0dBm, f = 3500MHz, f = 3200MHz, f
RF LO RF LO IF
RF
LO
C
CC
= 300MHz, unless otherwise noted.) (Note 7)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
f
= 450MHz,
RF terminated into 50I, LO
driven by 50Isource, IF
transformed to 50Iusing
external components shown
in the Typical Application
Circuit. See the Typical
Operating Characteristics
for performance vs. inductor
values.
IF
17
L1 = L2 = 120nH
f
= 350MHz,
IF
17
17
L1 = L2 = 270nH
IF Output Return Loss
RL
dB
IF
f
= 300MHz,
IF
L1 = L2 = 390nH
RF-to-IF Isolation
f
f
f
f
= 3100MHz to 3900MHz, P = +3dBm
27
dB
RF
LO
LO
LO
LO
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
= 2800MHz to 3600MHz, P = +3dBm
-30
dBm
dBm
dBm
LO
= 2800MHz to 3600MHz, P = +3dBm
-26.5
-27.5
LO
= 2800MHz to 3600MHz, P = +3dBm
LO
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
HIGH-SIDE LO INJECTION
= 3100MHz to 3900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 698ω, R2 = 604ω, V
= 4.75V to 5.25V, RF and LO ports
CC
are driven from 50I sources, P
= -3dBm to +3dBm, P
= -5dBm, f = 3100MHz to 3900MHz, f = 300MHz, f
= 3400MHz
LO
LO
RF
RF
IF
to 4200MHz, f < f , T = -40NC to +85NC. Typical values are for T = +25NC, V
= 5.0V, P = -5dBm, P
= 0dBm, f
RF
=
RF
LO
C
C
CC
RF
LO
3500MHz, f = 3800MHz, f = 300MHz, unless otherwise noted.) (Note 7)
LO
IF
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Small-Signal Conversion Gain
Gain Variation vs. Frequency
G
T
= +25NC
8.4
dB
C
C
f
RF
= 3100MHz to 3900MHz, any 100MHz
0.15
0.3
band
DG
dB
C
f
= 3100MHz to 3900MHz, any 200MHz
RF
band
Conversion Gain Temperature
Coefficient
f
T
= 3100MHz to 3900MHz,
= -40NC to +85NC
RF
TC
-0.01
11.4
24.8
dB/NC
dBm
dBm
CG
C
Input 1dB Compression Point
IP
1dB
(Note 10)
- f
f
= 1MHz, P
= P
= -5dBm/tone,
RF1 RF2
RF1
RF2
Third-Order Input Intercept Point
IIP3
T
= +25NC
C
f
P
= 3100MHz to 3900MHz, f
- f
= 1MHz,
RF
RF1 RF2
IIP3 Variation with T
Q0.2
9.8
dBm
dB
C
= P = -5dBm/tone, T = -40NC to +85NC
RF2 C
RF1
Single-Sideband Noise Figure
NF
No blockers present
SSB
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
TC
0.018
dB/NC
NF
T
= -40NC to +85NC
C
P
RF
P
RF
P
RF
P
RF
= -10dBm
= -5dBm
= -10dBm
= -5dBm
70
65
89
79
2LO - 2RF Spur Rejection
3LO - 3RF Spur Rejection
2 x 2
3 x 3
f
f
= f - 150MHz
dBc
dBc
SPUR
LO
= f - 100MHz
SPUR
LO
_______________________________________________________________________________________
5
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
HIGH-SIDE LO INJECTION (continued)
= 3100MHz to 3900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 698ω, R2 = 604ω, V
= 4.75V to 5.25V, RF and LO ports
CC
are driven from 50I sources, P
= -3dBm to +3dBm, P
= -5dBm, f = 3100MHz to 3900MHz, f = 300MHz, f
= 3400MHz
LO
LO
RF
RF
IF
to 4200MHz, f < f , T = -40NC to +85NC. Typical values are for T = +25NC, V
= 5.0V, P = -5dBm, P
= 0dBm, f
=
RF
RF
LO
C
C
CC
RF
LO
3500MHz, f = 3800MHz, f = 300MHz, unless otherwise noted.) (Note 7)
LO
IF
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
LO on and IF terminated into a matched
impedance
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
RL
RL
24
dB
RF
LO
IF
RF and IF terminated into a matched
impedance
18
200
20
dB
Nominal differential impedance at the IC’s IF
outputs
Z
I
RF terminated into
f
IF
= 450MHz,
50I, LO driven by 50I
source, IF transformed
to 50I using external
components shown in
the Typical Application
Circuit. See the Typical
Operating Characteristics
for performance vs.
inductor values.
L1 = L2 = 120nH
f
IF
= 350MHz,
20
L1 = L2 = 270nH
IF Output Return Loss
RL
dB
IF
f
IF
= 300MHz,
20
L1 = L2 = 390nH
RF-to-IF Isolation
P
LO
P
LO
P
LO
P
LO
= +3dBm
= +3dBm
= +3dBm
= +3dBm
30
-30.3
-19
dB
LO Leakage at RF Port
2LO Leakage at RF Port
LO Leakage at IF Port
dBm
dBm
dBm
-23
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
HIGH-SIDE LO INJECTION
= 2300MHz to 2900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 698ω, R2 = 604ω, V
= 4.75V to 5.25V, RF and LO ports
CC
are driven from 50I sources, P
= -3dBm to +3dBm, P
= -5dBm, f = 2300MHz to 2900MHz, f = 300MHz, f
= 2600MHz
LO
LO
RF
RF
IF
to 3200MHz, f < f , T = -40NC to +85NC. Typical values are for T = +25NC, V
= 5.0V, P = -5dBm, P
= 0dBm, f
=
RF
RF
LO
C
C
CC
RF
LO
2600MHz, f = 2900MHz, f = 300MHz, unless otherwise noted.) (Note 7)
LO
IF
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Small-Signal Conversion Gain
Gain Variation vs. Frequency
G
T
= +25NC
8.4
dB
C
C
f
RF
= 2300MHz to 2900MHz, any 100MHz
0.15
0.3
band
DG
dB
C
f
RF
= 2300MHz to 2900MHz, any 200MHz
band
Conversion Gain Temperature
Coefficient
f
T
= 2300MHz to 2900MHz,
= -40NC to +85NC
RF
TC
-0.01
11.4
25.0
dB/NC
dBm
dBm
CG
C
Input 1dB Compression Point
IP
1dB
(Note 10)
- f
f
= 1MHz, P
= P
= -5dBm/tone,
RF1 RF2
RF1
RF2
Third-Order Input Intercept Point
IIP3
T
= +25NC
C
6
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS—f
HIGH-SIDE LO INJECTION (continued)
= 2300MHz to 2900MHz,
RF
(Typical Application Circuit, with tuning elements outlined in Table 1, R1 = 698ω, R2 = 604ω, V
= 4.75V to 5.25V, RF and LO ports
CC
are driven from 50I sources, P
= -3dBm to +3dBm, P
= -5dBm, f = 2300MHz to 2900MHz, f = 300MHz, f
= 2600MHz
LO
LO
RF
RF
IF
to 3200MHz, f < f , T = -40NC to +85NC. Typical values are for T = +25NC, V
= 5.0V, P = -5dBm, P
= 0dBm, f
=
RF
RF
LO
C
C
CC
RF
LO
2600MHz, f = 2900MHz, f = 300MHz, unless otherwise noted. (Note 7)
LO
IF
PARAMETER
SYMBOL
CONDITIONS
= 2300MHz to 2900MHz, f
MIN
TYP
Q0.2
10.0
MAX
UNITS
dBm
dB
f
P
- f = 1MHz,
RF1 RF2
RF
IIP3 Variation with T
C
= P = -5dBm/tone, T = -40NC to +85NC
RF2 C
RF1
Single-Sideband Noise Figure
NF
No blockers present
SSB
Noise Figure Temperature
Coefficient
Single sideband, no blockers present,
TC
0.018
dB/NC
NF
T
= -40NC to +85NC
C
P
P
P
P
= -10dBm
= -5dBm
= -10dBm
= -5dBm
77
72
86
76
RF
RF
RF
RF
2LO - 2RF Spur Rejection
3LO - 3RF Spur Rejection
RF Input Return Loss
LO Input Return Loss
IF Output Impedance
2 x 2
3 x 3
f
= f - 50MHz
dBc
dBc
dB
dB
I
SPUR
LO
f
= f - 100MHz
SPUR
LO
LO on and IF terminated into a matched
impedance
RL
RL
30
18
RF
LO
IF
RF and IF terminated into a matched
impedance
Nominal differential impedance at the IC’s IF
outputs
Z
200
25
f
= 450MHz,
IF
RF terminated into 50I,
LO driven by 50I source,
IF transformed to 50I
using external compo-
nents shown in the Typical
Application Circuit. See
the Typical Operating
L1 = L2 = 120nH
f
= 350MHz,
IF
25
L1 = L2 = 270nH
IF Output Return Loss
RL
dB
IF
f
= 300MHz,
IF
25
L1 = L2 = 390nH
Characteristics for perfor-
mance vs. inductor values.
RF-to-IF Isolation
P
LO
P
LO
P
LO
P
LO
= +3dBm
= +3dBm
= +3dBm
= +3dBm
45
dB
LO Leakage at RF Port
2LO Leakage at RF Port
-28.8
-42.3
-26.3
dBm
dBm
dBm
LO Leakage at IF Port
Note 5: Not production tested.
Note 6: Operation outside this range is possible, but with degraded performance of some parameters. See the Typical
Operating Characteristics.
Note 7: All limits reflect losses of external components, including a 0.8dB loss at f = 300MHz due to the 4:1 impedance trans-
IF
former. Output measurements were taken at IF outputs of the Typical Application Circuit.
Note 8: Guaranteed by design and characterization.
Note 9: 100% production tested for functional performance.
Note 10: Maximum reliable continuous input power applied to the RF port of this device is +12dBm from a 50I source.
Note 11: Measured with external LO source noise filtered so that the noise floor is -174dBm/Hz. This specification reflects the
effects of all SNR degradations in the mixer including the LO noise, as defined in Application Note 2021: Specifications
and Measurement of Local Oscillator Noise in Integrated Circuit Base Station Mixers.
_______________________________________________________________________________________
7
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics
(Typical Application Circuit with tuning elements outlined in Table 1, V
= 5.0V, f = 3100MHz to 3900MHz, LO is low-side injected
RF
CC
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
11
10
9
11
10
9
11
10
9
T
= -40°C
C
T
= +25°C
C
8
8
8
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
T
= +85°C
3800
7
7
7
C
6
6
6
3000
3000
3000
3200
3400
3600
4000
3000
3000
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
26
25
24
23
26
25
24
23
26
25
24
23
P
RF
= -5dBm/TONE
P
= -5dBm/TONE
P
= -5dBm/TONE
RF
RF
T
C
= +25°C
V
= 5.25V
= 5.0V
CC
T
= +85°C
C
V
CC
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V
3800
CC
T
= -40°C
3600
C
3200
3400
3800
4000
3200
3400
3600
3800
4000
3200
3400
3600
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2RF - 2LO RESPONSE
vs. RF FREQUENCY
2RF - 2LO RESPONSE
vs. RF FREQUENCY
2RF - 2LO RESPONSE
vs. RF FREQUENCY
90
80
70
60
50
90
80
70
60
50
90
80
70
60
50
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
P
= +3dBm
LO
T
C
= +85°C
T
= +25°C
C
P
= 0dBm
LO
P
= -3dBm
V
= 4.75V, 5.0V, 5.25V
LO
CC
T
C
= -40°C
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
8
______________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V
= 5.0V, f = 3100MHz to 3900MHz, LO is low-side injected
RF
CC
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
3RF - 3LO RESPONSE
vs. RF FREQUENCY
3RF - 3LO RESPONSE
vs. RF FREQUENCY
3RF - 3LO RESPONSE
vs. RF FREQUENCY
85
75
65
55
85
75
65
55
85
75
65
55
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
T
C
= -40°C, +25°C, +85°C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
LO
3000
3000
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
12
11
10
9
12
11
10
9
12
11
10
9
T
= +85°C
C
T
= +25°C
C
C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
LO
CC
8
8
8
T
= -40°C
3600
7
7
7
3200
3400
3800
4000
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P vs. RF FREQUENCY
1dB
1dB
1dB
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
= +85°C
C
V
= 5.25V
CC
V
= 5.0V
CC
T
= +25°C
P
= -3dBm, 0dBm, +3dBm
C
LO
V
= 4.75V
CC
T
= -40°C
C
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
_______________________________________________________________________________________
9
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V
= 5.0V, f = 3100MHz to 3900MHz, LO is low-side injected
RF
CC
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= +25°C
T
C
= -40°C
2700
3000
2500
2900
3100
3300
3500
3700
2700
3000
2500
2900
3100
3300
3500
3700
4000
4000
2700
3000
2500
2900
3100
3300
3500
3700
4000
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
50
40
30
20
10
50
40
30
20
10
50
40
30
20
10
T
= +85°C
C
V
= 4.75V, 5.0V, 5.25V
CC
T
C
= +25°C
P
= -3dBm, 0dBm, +3dBm
LO
T
= -40°C
C
3200
3400
3600
3800
4000
3200
3400
3600
3800
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
T
= -40°C
= +25°C
C
T
= +85°C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
C
LO
T
C
3000
3500
4000
3000
3500
3000
3500
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
10 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V
= 5.0V, f = 3100MHz to 3900MHz, LO is low-side injected
RF
CC
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
T
C
= +25°C
T
C
= -40°C
T
C
= +85°C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
2500
3000
3500
4000
2500
3000
3500
4000
2500
3000
3500
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
10
20
30
40
0
10
20
30
40
50
f
IF
= 300MHz
f
= 3600MHz
LO
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
SUPPLY CURRENT
vs. TEMPERATURE (T )
LO PORT RETURN LOSS
vs. LO FREQUENCY
C
250
240
230
220
210
200
0
10
20
30
V
= 5.25V
CC
V
= 5.0V
CC
P
= -3dBm
LO
V
CC
= 4.75V
P
= 0dBm
LO
P
= +3dBm
3650
LO
-40
-15
10
35
60
85
2600
2950
3300
4000
TEMPERATURE (°C)
LO FREQUENCY (MHz)
______________________________________________________________________________________ 11
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 3.3V, f = 3100MHz to 3900MHz, LO is low-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
10
9
10
9
10
9
T
C
= -40NC
V
= 3.3V
V
CC
= 3.3V
CC
T
C
= +25NC
8
8
8
V
= 3.0V, 3.3V, 3.6V
P
= -3dBm, 0dBm, +3dBm
CC
LO
7
7
7
T
C
= +85NC
6
6
6
3000
3200
3400
3600
3800
4000
4000
4000
3000
3000
3000
3200
3400
3600
3800
4000
4000
4000
3000
3000
3000
3200
3400
3600
3800
4000
4000
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
22
21
20
19
18
22
21
20
19
18
22
21
20
19
18
P
RF
= -5dBm/TONE
V
= 3.3V
V
= 3.3V
CC
CC
P
RF
= -5dBm/TONE
P
RF
= -5dBm/TONE
V
= 3.6V
CC
T
C
= +85NC
V
= 3.3V
CC
T
C
= +25NC
V
= 3.0V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= -40NC
C
3000
3200
3400
3600
3800
3200
3400
3600
3800
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2RF - 2LO RESPONSE
vs. RF FREQUENCY
2RF - 2LO RESPONSE
vs. RF FREQUENCY
2RF - 2LO RESPONSE
vs. RF FREQUENCY
90
80
70
60
50
40
90
80
70
60
50
40
90
80
70
60
50
40
V
= 3.3V
V
P
= 3.3V
= -5dBm
P
= -5dBm
RF
CC
CC
RF
P
= -5dBm
RF
T
C
= +25NC
P
= +3dBm
LO
T
C
= +85NC
P
= 0dBm
LO
V
= 3.0V, 3.3V, 3.6V
CC
T
= -40NC
C
P
= -3dBm
LO
3000
3200
3400
3600
3800
3200
3400
3600
3800
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
12 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 3.3V, f = 3100MHz to 3900MHz, LO is low-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
3RF - 3LO RESPONSE
vs. RF FREQUENCY
3RF - 3LO RESPONSE
vs. RF FREQUENCY
3RF - 3LO RESPONSE
vs. RF FREQUENCY
75
70
65
60
55
50
75
70
65
60
55
50
75
70
65
60
55
50
V
= 3.3V
= -5dBm
V
CC
= 3.3V
= -5dBm
P
RF
= -5dBm
CC
P
RF
P
RF
V
CC
= 3.0V
V = 3.6V
CC
T
C
= -40°C, +25°C, +85°C
P
LO
= -3dBm, 0dBm, +3dBm
V
CC
= 3.3V
3000
3000
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
4000
4000
3000
3000
3000
3200
3400
3600
3800
4000
4000
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
12
11
10
9
12
11
10
9
12
11
10
9
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85NC
T
C
= +25NC
T
= -40NC
C
V
= 3.0V, 3.3V, 3.6V
P
LO
= -3dBm, 0dBm, +3dBm
CC
8
8
8
7
7
7
3200
3400
3600
3800
4000
3200
3400
3600
3800
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P vs. RF FREQUENCY
1dB
1dB
1dB
9
8
7
6
9
8
7
6
9
8
7
6
V
= 3.3V
V
= 3.3V
CC
CC
T
C
= +85NC
V
CC
= 3.6V
V
CC
= 3.3V
P
LO
= -3dBm, 0dBm, +3dBm
V
= 3.0V
CC
T
C
= +25NC
T
= -40NC
C
3200
3400
3600
3800
4000
3200
3400
3600
3800
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 13
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 3.3V, f = 3100MHz to 3900MHz, LO is low-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
V
CC
= 3.3V
V
CC
= 3.3V
V
= 3.6V
CC
T
C
= -40°C, +25°C, +85°C
P
= -3dBm, 0dBm, +3dBm
V
CC
= 3.0V
3500
LO
V
= 3.3V
2900
CC
2700
3000
2500
2900
3100
3300
3500
3700
4000
4000
2700
3000
2500
2900
3100
3300
3500
3700
4000
4000
2700
3100
3300
3700
4000
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
50
40
30
20
10
50
40
30
20
10
50
40
30
20
10
V
= 3.3V
V
= 3.3V
CC
CC
T
= +85NC
C
V
= 3.0V, 3.3V, 3.6V
CC
T
C
= +25NC
P
LO
= -3dBm, 0dBm, +3dBm
T
= -40NC
C
3200
3400
3600
3800
3200
3400
3600
3800
3000
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
V
= 3.3V
V
= 3.3V
CC
CC
T
= -40°C, +25°C, +85°C
P
= -3dBm, 0dBm, +3dBm
C
LO
V
= 3.6V
CC
V
CC
= 3.3V
V
CC
= 3.0V
3000
3500
3000
3500
2500
3000
3500
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
14 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 3.3V, f = 3100MHz to 3900MHz, LO is low-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
V
= 3.3V
V
= 3.3V
CC
CC
V
= 3.0V
T
C
= +25NC
CC
T
= -40NC
C
V
CC
= 3.3V
3500
P
LO
= -3dBm, 0dBm, +3dBm
T
C
= +85NC
V
CC
= 3.6V
2500
3000
3500
4000
2500
3000
3500
4000
2500
3000
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
10
20
30
40
0
10
20
30
40
50
V
= 3.3V
CC
f
= 3600MHz
LO
f
= 300MHz
IF
P
LO
= -3dBm, 0dBm, +3dBm
V
= 3.0V, 3.3V, 3.6V
CC
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (T )
C
0
10
20
30
160
150
140
130
V
= 3.3V
CC
V
= 3.6V
CC
P
= -3dBm
LO
P
= 0dBm
LO
V
= 3.3V
CC
V
= 3.0V
CC
P
= +3dBm
LO
2600
2950
3300
3650
4000
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 15
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 3100MHz to 3900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
11
10
9
11
10
9
11
10
9
T
C
= -40°C
T
= +25°C
C
8
8
8
V
= 4.75V, 5.0V, 5.25V
P
= -3dBm, 0dBm, +3dBm
CC
LO
7
7
7
T
C
= +85°C
6
6
6
3000
3000
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
4000
4000
3000
3000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
26
25
24
23
26
25
24
23
26
25
24
23
P
= -5dBm/TONE
P
= -5dBm/TONE
P
= -5dBm/TONE
RF
RF
RF
T
C
= +85°C
V
= 5.25V
CC
T
= +25°C
C
V
= 5.0V
CC
V
= 4.75V
P
= -3dBm, 0dBm, +3dBm
CC
LO
T
C
= -40°C
3200
3400
3600
3800
4000
3200
3400
3600
3800
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
90
80
70
60
50
90
80
70
60
50
90
80
70
60
50
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
P
P
= +3dBm
LO
T
C
= +85°C
T
= +25°C
3800
C
P
= -3dBm
3800
LO
V
= 4.75V, 5.0V, 5.25V
= 0dBm
3400
CC
LO
T
C
= -40°C
3200
3400
3600
4000
3200
3600
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
16 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 3100MHz to 3900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
95
85
75
65
55
95
85
75
65
55
95
85
75
65
55
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
T
C
= +85°C
T
C
= +25°C
V
= 4.75V, 5.0V, 5.25V
P
= -3dBm, 0dBm, +3dBm
CC
LO
T
= -40°C
C
3000
3000
3000
3200
3400
3600
3800
4000
3700
4000
3000
3000
3000
3200
3400
3600
3800
4000
3000
3000
3000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
12
11
10
9
12
11
10
9
12
11
10
9
T
= +85°C
C
T
= +25°C
C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
8
8
8
T
= -40°C
C
7
7
7
3175
3350
3525
3175
3350
3525
3700
3175
3350
3525
3700
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
1dB
1dB
1dB
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
C
= +85°C
V
= 5.25V
CC
V
= 5.0V
CC
T
= +25°C
C
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V
CC
T
C
= -40°C
3200
3400
3600
3800
3200
3400
3600
3800
4000
3200
3400
3600
3800
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 17
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 3100MHz to 3900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
T
C
= -40°C
T
C
= +25°C
T
C
= +85°C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
3000
3000
3300
3500
3700
3900
4100
4300
3000
3000
3300
3500
3700
3900
4100
4300
4000
4300
3000
3000
3300
3500
3700
3900
4100
4300
4000
4300
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
50
40
30
20
10
50
40
30
20
10
50
40
30
20
10
T
= +85°C
C
P
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
LO
CC
T
= +25°C
3600
C
T
= -40°C
C
3200
3400
3800
4000
3200
3400
3600
3800
3200
3400
3600
3800
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
T
= +85°C
C
T
C
= +25°C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
= -40°C
4050
C
3550
3800
4300
3550
3800
4050
3550
3800
4050
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
18 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 3100MHz to 3900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
2LO LEAKAGE AT RF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
P
= +3dBm
LO
T
= -40°C
C
T
C
= +85°C
P
= -3dBm
LO
T
C
= +25°C
V
= 4.75V, 5.0V, 5.25V
CC
P
= 0dBm
LO
3300
3550
3800
4050
4300
3300
3550
3800
4050
4300
3300
3550
3800
4050
4300
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF PORT RETURN LOSS
vs. RF FREQUENCY
IF PORT RETURN LOSS
vs. IF FREQUENCY
0
10
20
30
40
0
10
20
30
40
50
f
IF
= 300MHz
f
= 4100MHz
LO
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
3000
3200
3400
3600
3800
4000
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS
vs. LO FREQUENCY
SUPPLY CURRENT
vs. TEMPERATURE (T )
C
0
10
20
30
250
240
230
220
210
200
V
= 5.25V
CC
V
= 5.0V
CC
P
= -3dBm
LO
V
= 4.75V
CC
P
= 0dBm
LO
P
= +3dBm
LO
2700
3100
3500
3900
4300
-40
-15
10
35
60
65
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 19
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 2300MHz to 2900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
11
10
9
11
10
9
11
10
9
T
= -40°C
C
T
C
= +25°C
8
8
8
P
= -3dBm, 0dBm, +3dBm
LO
V
= 4.75V, 5.0V, 5.25V
CC
7
7
7
T
C
= +85°C
2600
6
6
6
2300
2300
2300
2450
2750
2900
2300
2300
2300
2450
2600
2750
2900
2900
2900
2300
2300
2300
2450
2600
2750
2900
2900
2900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
27
26
25
24
23
27
26
25
24
23
27
26
25
24
23
P
RF
= -5dBm/TONE
P
RF
= -5dBm/TONE
P
= -5dBm/TONE
RF
T
= +85°C
C
T
C
= +25°C
V
= 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
V
= 5.0V
V
= 4.75V
CC
CC
T
C
= -40°C
2450
2600
2750
2900
2450
2600
2750
2450
2600
2750
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
2LO - 2RF RESPONSE
vs. RF FREQUENCY
90
80
70
60
50
90
80
70
60
50
90
80
70
60
50
P
= -5dBm
P
= -5dBm
P
= -5dBm
RF
RF
RF
T
C
= +85NC
V
CC
= 4.75V
P
= +3dBm
LO
V
CC
= 5.25V
P
= -3dBm
LO
P
= 0dBm
2750
V
= 5.0V
2750
T
= -40NC
LO
CC
C
T
= +25NC
C
2450
2600
2750
2900
2450
2600
2450
2600
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
20 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 2300MHz to 2900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
3LO - 3RF RESPONSE
vs. RF FREQUENCY
95
85
75
65
55
95
85
75
65
55
95
85
75
65
55
P
= -5dBm
P
RF
= -5dBm
P
= -5dBm
RF
RF
T
C
= +85NC
T
C
= +25NC
V
= 4.75V, 5.0V, 5.25V
CC
T
= -40NC
P
LO
= -3dBm, 0dBm, +3dBm
C
2300
2450
2600
2750
2900
2900
2900
2300
2300
2300
2450
2600
2750
2900
2900
2900
2300
2300
2300
2450
2600
2750
2900
2900
2900
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
C
= +85NC
V
= 4.75V
CC
P
= -3dBm, 0dBm, +3dBm
V
= 5.0V
CC
LO
T
= +25NC
C
T
= -40NC
C
V
= 5.25V
CC
8
8
8
2300
2450
2600
2750
2450
2600
2750
2450
2600
2750
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
1dB
1dB
1dB
13
12
11
10
9
13
12
11
10
9
13
12
11
10
9
T
C
= +85NC
V
= 5.25V
CC
V
= 5.0V
CC
P
= -3dBm, 0dBm, +3dBm
LO
V
CC
= 4.75V
T
C
= +25NC
T
= -40NC
C
2300
2450
2600
2750
2450
2600
2750
2450
2600
2750
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
______________________________________________________________________________________ 21
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 2300MHz to 2900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
LO LEAKAGE AT IF PORT
vs. LO FREQUENCY
-10
-20
-30
-40
-10
-20
-30
-40
-10
-20
-30
-40
T = +25°C
C
T
C
= +85°C
P
LO
= -3dBm, 0dBm, +3dBm
V
= 4.75V, 5.0V, 5.25V
CC
T
= -40°C
C
2600
2300
2500
2750
2900
3050
3200
2900
4000
2600
2300
2500
2750
2900
3050
3200
2900
4000
2600
2300
2500
2750
2900
3050
3200
2900
4000
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO FREQUENCY (MHz)
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
RF-TO-IF ISOLATION
vs. RF FREQUENCY
60
50
40
30
60
50
40
30
60
50
40
30
V
V
= 5.25V
= 5.0V
CC
T
= +85NC
C
CC
T
C
= +25NC
V
CC
= 4.75V
P
LO
= -3dBm, 0dBm, +3dBm
T
= -40NC
C
2450
2600
2750
2450
2600
2750
2450
2600
2750
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
RF FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
-20
-25
-30
-35
-40
T
= -40NC
C
V
= 4.75V, 5.0V, 5.25V
CC
P
= -3dBm, 0dBm, +3dBm
LO
T
C
= +25NC
T
C
= +85NC
3000
3500
3000
3500
3000
3500
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
22 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Typical Operating Characteristics (continued)
(Typical Application Circuit with tuning elements outlined in Table 1, V = 5.0V, f = 2300MHz to 2900MHz, LO is high-side injected
CC
RF
for a 300MHz IF, P = -5dBm, P = 0dBm, T = +25NC, unless otherwise noted.)
RF
LO
C
2LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
2LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
2LO LEAKAGE AT RF PORT vs.
LO FREQUENCY
-20
-30
-40
-50
-60
-20
-30
-40
-50
-60
-20
-30
-40
-50
-60
T
C
= -40NC
P
= +3dBm
LO
V
= 4.75V
V
= 5.0V
CC
CC
T
C
= +25NC
V
= 5.25V
CC
P
= 0dBm
LO
T
C
= +85NC
P
= -3dBm
LO
2500
3000
3500
4000
2500
3000
3500
4000
2500
3000
3500
4000
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
LO FREQUENCY (MHz)
IF PORT RETURN LOSS vs.
IF FREQUENCY
RF PORT RETURN LOSS vs.
RF FREQUENCY
0
10
20
30
40
0
10
20
30
40
50
f
= 300MHz
f
= 3000MHz
LO
IF
V
= 4.75V, 5.0V, 5.25V
CC
P
LO
= -3dBm, 0dBm, +3dBm
2300
2450
2600
2750
2900
50
140
230
320
410
500
RF FREQUENCY (MHz)
IF FREQUENCY (MHz)
LO PORT RETURN LOSS vs.
LO FREQUENCY
SUPPLY CURRENT vs.
TEMPERATURE (T )
C
0
10
20
30
250
240
230
220
210
200
V
= 5.25V
CC
V
= 5.0V
CC
P
= -3dBm
LO
V
CC
= 4.75V
P
= 0dBm
P
= +3dBm
3650
LO
LO
2600
2950
3300
4000
-40
-15
10
35
60
85
LO FREQUENCY (MHz)
TEMPERATURE (°C)
______________________________________________________________________________________ 23
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Pin Configuration/Functional Diagram
TOP VIEW
20
19
18
17
16
V
15 GND
1
2
3
4
5
CC
RF
MAX19998
V
CC
14
13 GND
12 GND
GND
GND
GND
EP
11
LO
6
7
8
9
10
Pin Description
PIN
NAME
FUNCTION
1, 6, 8, 14
V
CC
Power Supply. Bypass to GND with 0.01FF capacitors as close as possible to the pin.
Single-Ended 50IRF Input. Internally matched and DC shorted to GND through a balun. Provide an
input DC-blocking capacitor if required.
2
RF
3, 9, 13, 15
GND
Ground. Not internally connected. Pins can be grounded.
4, 5, 10, 12,
17
Ground. Internally connected to the exposed pad. Connect all ground pins and the exposed pad
(EP) together.
GND
LO Amplifier Bias Control. Output bias resistor for the LO buffer. Connect a 604I(5V, 230mA bias
condition) from LOBIAS to ground.
7
LOBIAS
LO
11
Local Oscillator Input. This input is internally matched to 50I. Requires an input DC-blocking capacitor.
External Inductor Connection. Connect a low-ESR 4.7nH inductor from this pin to ground to increase
the RF-to-IF and LO-to-IF isolation. Connect this pin directly to ground to reduce the component
count at the expense of reduced RF-to-IF and LO-to-IF isolation.
16
LEXT
Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
Application Circuit).
(see the Typical
CC
18, 19
20
IF-, IF+
IFBIAS
IF Amplifier Bias Control. IF bias resistor connection for the IF amplifier. Connect a 698I(5V, 230mA
bias condition) from IFBIAS to GND.
Exposed Pad. Internally connected to GND. Solder this exposed pad to a PCB pad that uses multiple
ground vias to provide heat transfer out of the device into the PCB ground planes. These multiple via
grounds are also required to achieve the noted RF performance.
—
EP
24 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
would require higher L1 and L2 inductor values to main-
tain a good IF match. The differential, open-collector IF
output ports require that these inductors be connected
Detailed Description
The MAX19998 provides high linearity and low noise
figure for a multitude of 2300MHz to 4000MHz WiMAX,
to V
.
CC
LTE, and MMDS base-station applications. This device
operates over a 2600MHz to 4300MHz LO range and
a 50MHz to 500MHz IF range. Integrated baluns and
matching circuitry allow 50I single-ended interfaces to
the RF and LO ports. The integrated LO buffer provides a
high drive level to the mixer core, reducing the LO drive
required at the MAX19998’s input to a range of -3dBm
to +3dBm. The IF port incorporates a differential output,
which is ideal for providing enhanced 2RF - 2LO and
2LO - 2RF performance.
Note that these differential ports are ideal for provid-
ing enhanced 2RF - 2LO performance. Single-ended
IF applications require a 4:1 (impedance ratio) balun to
transform the 200I differential IF impedance to a 50I
single-ended system. Use the TC4-1W-17 4:1 transform-
er for IF frequencies above 200MHz and the TC4-1W-7A
4:1 transformer for frequencies below 200MHz. The user
can use a differential IF amplifier or SAW filter on the
mixer IF port, but a DC block is required on both IF+/
IF- ports to keep external DC from entering the IF ports
of the mixer.
RF Input and Balun
The MAX19998 RF input provides a 50I match when
combined with a series DC-blocking capacitor. This
DC-blocking capacitor is required as the input is inter-
nally DC shorted to ground through the on-chip balun.
When using an 8.2pF DC-blocking capacitor, the RF port
input return loss is typically 17dB over the RF frequency
range of 3200MHz to 3900MHz. See Table 1 for lower
band tuning.
Applications Information
Input and Output Matching
The RF and LO inputs provide 50I matches when
combined with the proper tuning. Use an 8.2pF capaci-
tor value on the RF port for frequencies ranging from
3000MHz to 4000MHz. Use a 3.3nH series inductor and
a 0.3pF shunt capacitor on the RF port for frequencies
ranging from 2300MHz to 2900MHz. On the LO port, use
a 2pF DC-blocking capacitor to cover operations span-
ning the 2600MHz to 4300MHz range.
LO Inputs, Buffer, and Balun
The LO input is internally matched to 50I, requiring
only a 2pF DC-blocking capacitor. A two-stage internal
LO buffer allows for a -3dBm to +3dBm LO input power
range. The on-chip low-loss balun, along with an LO
buffer, drives the double-balanced mixer. All interfacing
and matching components from the LO inputs to the IF
outputs are integrated on-chip.
The IF output impedance is 200I(differential). For evalu-
ation, an external low-loss 4:1 (impedance ratio) balun
transforms this impedance down to a 50I single-ended
output (see the Typical Application Circuit).
Reduced-Power Mode
The MAX19998 has two pins (LOBIAS, IFBIAS) that allow
external resistors to set the internal bias currents. See
Table 1 for nominal values for these resistors. Larger
value resistors can be used to reduce power dissipa-
tion at the expense of some performance loss. If Q1%
resistors are not readily available, substitute with Q5%
resistors.
High-Linearity Mixer
The core of the MAX19998 is a double-balanced, high-
performance passive mixer. Exceptional linearity is pro-
vided by the large LO swing from the on-chip LO buffer.
When combined with the integrated IF amplifier, IIP3,
2RF - 2LO rejection, and noise-figure performance are
typically +24.3dBm, 67dBc, and 9.7dB, respectively,
for low-side LO injection architectures covering the
3000MHz to 4000MHz RF band.
Significant reductions in power consumption can also
be realized by operating the mixer with an optional
supply voltage of 3.3V. Doing so reduces the overall
power consumption by 57% (typ). See the 3.3V Supply
AC Electrical Characteristics table and the relevant 3.3V
curves in the Typical Operating Characteristics section
to evaluate the power vs. performance trade-offs.
Differential IF Output Amplifier
The MAX19998 has a 50MHz to 500MHz IF frequency
range, where the low-end frequency depends on the
frequency response of the external IF components. The
MAX19998 mixer is tuned for a 300MHz IF using 390nH
external pullup bias inductors. Lower IF frequencies
______________________________________________________________________________________ 25
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
does not exceed several picofarads. For the best per-
formance, route the ground pin traces directly to the
exposed pad under the package. The PCB exposed pad
MUST be connected to the ground plane of the PCB. It is
suggested that multiple vias be used to connect this pad
to the lower level ground planes. This method provides a
good RF/thermal-conduction path for the device. Solder
the exposed pad on the bottom of the device package
to the PCB. The MAX19998 evaluation kit can be used
as a reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.
LEXT Inductor
Short LEXT to ground using a 0I resistor. For applica-
tions requiring improved RF-to-IF and LO-to-IF isolation,
L3 can be changed to optimize performance (see the
Typical Operating Characteristics). However, the load
impedance presented to the mixer must be such that any
capacitances from IF- and IF+ to ground do not exceed
several picofarads to ensure stable operating conditions.
Since approximately 120mA flows through LEXT, it is
important to use a low-DCR wire-wound inductor.
Layout Considerations
A properly designed PCB is an essential part of any RF/
microwave circuit. Keep RF signal lines as short as pos-
sible to reduce losses, radiation, and inductance. The
load impedance presented to the mixer must be such
that any capacitance from both IF- and IF+ to ground
Power-Supply Bypassing
Proper voltage supply bypassing is essential for high-
frequency circuit stability. Bypass each V
pin with the
CC
capacitors shown in the Typical Application Circuit and
see Table 1 for component values.
Table 1. Component Values
DESIGNATION
QTY
DESCRIPTION
COMPONENT SUPPLIER
8.2pF microwave capacitor (0402). Use for RF
frequencies ranging from 3000MHz to 4000MHz.
Murata Electronics North America, Inc.
Coilcraft, Inc.
C1
1
3.3nH microwave inductor (0402). Use for RF
frequencies ranging from 2300MHz to 2900MHz.
C2, C6, C8, C11
C3, C9
4
0
1
2
1
0.01FF microwave capacitors (0402)
Not installed, capacitors
Murata Electronics North America, Inc.
—
C10
2pF microwave capacitor (0402)
1000pF microwave capacitors (0402)
82pF microwave capacitor (0402)
Murata Electronics North America, Inc.
Murata Electronics North America, Inc.
Murata Electronics North America, Inc.
C13, C14
C15
Not installed for RF frequencies ranging from
3000MHz to 4000MHz
—
C16
1
0.3pF microwave capacitor (0402). Use for RF
frequencies ranging from 2300MHz to 2900MHz.
Murata Electronics North America, Inc.
L1, L2
L3
2
1
390nH wire-wound high-Q inductors* (0805)
4.7nH wire-wound high-Q inductor (0603)
Coilcraft, Inc.
Coilcraft, Inc.
698I Q1% resistor (0402). Use for V
applications.
= 5.0V
= 3.3V
= 5.0V
= 3.3V
CC
CC
CC
R1
R2
1
1
Digi-Key Corp.
Digi-Key Corp.
845I Q1% resistor (0402). Use for V
applications.
604I Q1% resistor (0402). Use for V
applications.
1.1kI Q1% resistor (0402). Use for V
CC
applications.
R3
T1
U1
1
1
1
0I resistor (1206)
Digi-Key Corp.
4:1 IF balun TC4-1W-17*
MAX19998 IC (20 Thin QFN-EP)
Mini-Circuits
Maxim Integrated Products, Inc.
*Use larger value inductors and a TC4-1W-7A 4:1 balun for IF frequencies below 200MHz.
26 _____________________________________________________________________________________
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
heat from the EP. In addition, provide the EP with a low-
inductance path to electrical ground. The EP MUST be
soldered to a ground plane on the PCB, either directly or
through an array of plated via holes.
Exposed Pad RF/Thermal Considerations
The exposed pad (EP) of the MAX19998’s 20-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PCB on which
the MAX19998 is mounted be designed to conduct
Typical Application Circuit
C15
L1
3
6
4
IF
OUTPUT
C13
T1
2
1
L2
R1
R3
C14
4:1
L3
+5.0V
20
19
18
17
16
C3
C2
V
CC
GND
15
14
13
12
11
1
U1
C1
RF
V
CC
RF
INPUT
MAX19998
+5.0V
2
3
4
5
C11
C16*
GND
GND
GND
GND
GND
LO
EP
C10
LO
INPUT
6
7
8
9
10
+5.0V
R2
C6
NOTE: PINS 4, 5, 10, 12, AND 17 ARE ALL INTERNALLY
CONNECTED TO THE EXPOSED GROUND PAD. CONNECT
THESE PINS TO GROUND TO IMPROVE ISOLATION.
+5.0V
PINS 3, 9, 13, AND 15 HAVE NO INTERNAL CONNECTION, BUT CAN BE
EXTERNALLY GROUNDED TO IMPROVE ISOLATION.
C8
C9
*C16 NOT USED FOR 3000MHz TO 4000MHz APPLICATIONS.
______________________________________________________________________________________ 27
SiGe, High-Linearity, 2300MHz to 4000MHz
Downconversion Mixer with LO Buffer
Chip Information
Package Information
PROCESS: SiGe BiCMOS
For the latest package outline information and land pat-
terns, go to www.maxim-ic.com/packages. Note that
a “+”, “#”, or “-” in the package code indicates RoHS
status only. Package drawings may show a different suf-
fix character, but the drawing pertains to the package
regardless of RoHS status.
PACKAGE TYPE PACKAGE CODE DOCUMENT NO.
20 Thin QFN-EP
T2055+3
21-0140
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are implied.
Maxim reserves the right to change the circuitry and specifications without notice at any time.
28
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600
2009 Maxim Integrated Products Maxim is a registered trademark of Maxim Integrated Products, Inc.
©
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