MAX6399ATA-T [MAXIM]
High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller; 高电压，过压/欠压，保护开关控制器
| 型号： | MAX6399ATA-T |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | High-Voltage, Overvoltage/Undervoltage, Protection Switch Controller |
| 文件： | 总10页 (文件大小：638K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-3655; Rev 1; 3/06
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
General Description
Features
The MAX6399 is a small overvoltage and undervoltage
protection circuit. The device can monitor a DC-DC out-
put voltage and quickly disconnect the power source
from the DC-DC input load when an overvoltage condi-
tion occurs. A power-OK output signals when the
DC-DC input voltage falls below an adjustable thresh-
old. This controller architecture provides the ability to
size the external n-channel MOSFET to meet specific
load current requirements.
♦ Wide Supply Voltage Range (5.75V to 72V)
♦ Internal Charge Pump Ensures n-Channel
MOSFET is Fully Enhanced During Normal
Operation (V
= 10V)
GS
♦ Fast GATE Shutoff During Overvoltage with 20mA
Sink Capability
♦ Latches Off External n-Channel MOSFET During
High-Voltage Transients
When the DC-DC monitored output voltage is below the
user-adjustable overvoltage threshold, the GATE output
of the MAX6399 goes high to enhance the n-channel
MOSFET. The MAX6399 offers internal charge-pump
circuitry that allows the GATE voltage to be 10V above
♦ Adjustable DC-DC Input Undervoltage Threshold
Power-OK Output
♦ Adjustable DC-DC Output Overvoltage
the input voltage (V
= 10V) to fully enhance the
Thresholds
GS
external n-channel MOSFET, thus minimizing the drain-
to-source resistance.
♦ Overtemperature Shutdown Protection
♦ Fully Specified from -40°C to +125°C
When the monitored output voltage rises above the
user-adjusted overvoltage threshold, the GATE output
rapidly pulls low to shut off the MOSFET. The MOSFET
remains latched off until either the MAX6399 input
power or SHDN input is cycled. The MAX6399 includes
a logic-low shutdown input that disables the GATE. An
internal overtemperature detector also disables the
gate when the MAX6399 temperature reaches the ther-
mal-shutdown threshold.
Ordering Information
TOP
MARK
PKG
CODE
PART
PIN-PACKAGE
MAX6399ATA-T 8 TDFN-8
ANE
T833-2
The device operates over a wide supply voltage range
(5.75V to 72V) and is offered in a small TDFN package,
fully specified from -40°C to +125°C.
Applications
Networking
Server
Telecom
Typical Operating Circuit
RAID
DC-DC
CONVERTER
Pin Configuration
OUT
IN
TOP VIEW
EN GND
LOAD
8
7
6
5
GATE
12V
IN
OUT
MAX6399
SHDN
SET
MAX6399
OUT_SET
GND
*EP
4
3.3V
1
2
3
POK
TDFN
*EXPOSED PAD. CONNECT TO GND.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
ABSOLUTE MAXIMUM RATINGS
IN, GATE, OUT .......................................................-0.3V to +80V
SHDN.............................................................-0.3V to (IN + 0.3V)
OUT ........................................................................-0.3V to +80V
GATE to OUT..........................................................-0.3V to +20V
OUT_SET, SET, POK ..............................................-0.3V to +12V
Maximum Current (All pins) ................................................50mA
Continuous Power Dissipation (T = +70°C)
A
8-Pin TDFN (derate 18.2mW/°C above +70°C) .........1455mW
Operating Temperature Range .........................-40°C to +125°C
Junction Temperature......................................................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature Range................................................+300°C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V = 14V; C
= 6000pF, T = -40°C to +125°C, unless otherwise noted. Typical values are at T = +25°C.) (Note 1)
GATE
IN
A
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
72.00
130
UNITS
Supply Voltage Range
V
5.75
V
IN
SHDN = high
SHDN = low
100
10
5
IN Supply Current
I
IN
µA
V
22
IN Undervoltage Lockout
V
rising, enables GATE
4.68
5.50
IN
IN Undervoltage Lockout
Hysteresis
V
falling, GATE off
155
mV
IN
SET Threshold Voltage
SET Threshold Hysteresis
SET Input Current
V
With respect to GND, SET rising
0.480
-50
0.5
5
0.517
+50
V
TH (SET)
V
% V
TH
HYST
I
nA
µs
SET
Startup Response Time
t
SHDN rising (Note 2)
100
1
START
GATE rising from GND to V
+ 8V,
OUT
GATE Rise Time
ms
µs
C
= 6000pF, OUT = GND
GATE
SET rising from V - 100mV to
TH
SET to GATE Prop Delay
t
0.5
OV
V
+ 100mV
TH
V
3.6V
+
V
3.8V
+
V
4.0V
+
IN
IN
IN
V
= V = 5V, R to IN = 1MΩ
GATE
OUT
IN
GATE Output-Voltage High
V
V
OH
V
15V
+
V
10V
+
V
+
IN
IN
IN
V
= V ; V ≥ 14V, R
to IN = 1MΩ
OUT
IN IN
GATE
10.7V
GATE Output-Voltage Low
GATE Charge-Pump Current
GATE to OUT Clamp Voltage
V
GATE sinking 20mA, V
GATE = GND
= GND
0.3
18.0
0.4
V
µA
V
OL
OUT_SET
I
75
GATE
V
13.8
1.4
CLMP
SHDN Logic-High Input Voltage
SHDN Logic-Low Input Voltage
V
V
IH
V
V
IL
V
= 2V, SHDN is internally pulled
SHDN
SHDN Input Pulldown Current
1
µA
down to GND
Thermal-Shutdown Temperature
(Note 3)
+150
20
°C
°C
Thermal-Shutdown Hysteresis
POWER-OK (POK)
V
TH
OUT_SET Threshold
OUT_SET rising
1.205
1.23
1.258
V
(OUT_SET)
2
_______________________________________________________________________________________
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
ELECTRICAL CHARACTERISTICS (continued)
(V = 14V; C
= 6000pF, T = -40°C to +125°C, unless otherwise noted. Typical values are at T = +25°C.) (Note 1)
GATE
IN
A
A
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
% V
TH
OUT_SET Hysteresis
5
(OUT_SET)
OUT_SET to POK Delay
POK Output Voltage Low
POK Leakage Current
V
V
V
rising or falling
35
µs
V
OUT_SET
V
≥ 1.5V, I
= 3.2mA, POK asserted
0.45
100
OL
IN
SINK
= 1.4V
nA
OUT_SET
Note 1: Specifications to -40°C are guaranteed by design and not production tested.
Note 2: The MAX6399 powers up with the external FET in off mode (V
= GND). The external FET turns on t
after the
GATE
START
device is powered up and all input conditions are valid.
Note 3: For accurate overtemperature shutdown performance, place the device in close thermal contact with the external MOSFET.
Typical Operating Characteristics
(V = 14V, C
= 6nF, unless otherwise noted.)
IN
GATE
SUPPLY CURRENT
vs. INPUT VOLTAGE
GATE-DRIVE VOLTAGE
vs. INPUT VOLTAGE
SUPPLY CURRENT vs. INPUT VOLTAGE
12
10
8
150
140
130
120
110
100
90
20
18
16
14
12
10
8
V
OUT
= V
IN
GATE OFF
GATE ON
6
80
4
6
70
4
60
2
2
50
0
40
0
4
6
8
10 12 14 16 18 20 22 24
INPUT VOLTAGE (V)
0
20
40
60
80
0
20
40
60
80
INPUT VOLTAGE (V)
INPUT VOLTAGE (V)
SET THRESHOLD
vs. TEMPERATURE
OUT_SET THRESHOLD
vs. TEMPERATURE
UVLO THRESHOLD vs. TEMPERATURE
6.0
5.8
5.6
5.4
5.2
5.0
4.8
4.6
4.4
4.2
4.0
510
508
506
504
502
500
498
496
494
492
490
1.26
1.25
OUT_SET RISING
1.24
1.23
1.22
1.21
1.20
1.19
1.18
1.17
1.16
OUT_SET FALLING
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
TEMPERATURE (°C)
TEMPERATURE (°C)
TEMPERATURE (°C)
_______________________________________________________________________________________
3
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
Typical Operating Characteristics (continued)
(V = 14V, C
= 6nF, unless otherwise noted.)
IN
GATE
GATE-TO-OUT CLAMP VOLTAGE
vs. TEMPERATURE
GATE-DRIVE VOLTAGE
vs. TEMPERATURE
STARTUP WAVEFORM
MAX6399 toc09
17.0
16.9
16.8
16.7
16.6
16.5
16.4
16.3
16.2
16.1
16.0
10.500
10.495
10.490
10.485
10.480
10.475
10.470
10.465
10.460
10.455
10.450
V
= 9V
UV
POK PULLED
TO 3.3V
V
IN
10V/div
V
GATE
10V/div
V
OUT
10V/div
V
POK
5V/div
-50 -25
0
25
50
75 100 125
-50 -25
0
25
50
75 100 125
2ms/div
TEMPERATURE (°C)
TEMPERATURE (°C)
STARTUP WAVEFORM (SHDN RISING)
OVERVOLTAGE SWITCH FAULT
MAX6399 toc11
MAX6399 toc10
4V
V
V
= 4V
= 14V
OV
IN
POK PULLED TO 3.3V
V
SHDN
2V/div
V
DC_DC
100mV/div
3.3V
V
GATE
10V/div
V
GATE
10V/div
V
OUT
10V/div
V
OUT
10V/div
V
POK
5V/div
400µs/div
UNDERVOLTAGE FAULT
MAX6399 toc12
V
IN
5V/div
V
GATE
20V/div
V
OUT
10V/div
V
UV
= 9V
POK PULLED
TO 3.3V
V
POK
5V/div
100µs/div
4
_______________________________________________________________________________________
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
Pin Description
PIN
NAME
FUNCTION
1
IN
Supply Voltage Input. Bypass with a 10µF capacitor (minimum).
Shutdown Input. Drive SHDN low to force GATE low, turning off the external n-channel MOSFET. SHDN is
internally pulled down to GND with a 1µA current source. Toggle SHDN to unlatch GATE after an
overvoltage condition. Connect to IN for normal operation.
2
3
SHDN
Overvoltage Threshold Adjustment Input. Use SET to monitor a system output voltage. Connect SET to an
external resistor voltage-divider network to adjust the desired overvoltage limit threshold. GATE is quickly
turned off when SET rises above its 0.5V (typ) threshold.
SET
4
5
POK
GND
Power-OK Open-Drain Output. POK asserts low when OUT_SET falls below its 1.23V (typ) threshold.
Ground
Gate-Drive Output. Connect GATE to the gate of an external n-channel FET. GATE is a charge pump with a
100µA pullup current to IN + 10V (typ) during normal operation. GATE is quickly turned off during an
overvoltage condition. GATE remains latched off until the power is recycled or SHDN is toggled. GATE pulls
low when SHDN is low.
6
GATE
7
8
OUT
OUT_SET
EP
Output Voltage-Sense Input. Connect to the source of the external n-channel MOSFET.
Undervoltage Detector Input. Use OUT_SET to monitor the source of the MOSFET. Connect a
resistor-divider from OUT to OUT_SET to adjust the desired undervoltage threshold. POK asserts low
when OUT_SET falls below its 1.23V threshold.
—
Exposed Pad. Connect to ground plane.
Detailed Description
IN
The MAX6399 is an ultra-small, low-current protection
THERMAL
PROTECTION
circuit utilized in DC-DC converter applications. The
MAX6399 monitors the input and output voltages of a
UVLO
DC-DC converter for undervoltage and overvoltage
conditions. The MAX6399 controls an external n-chan-
nel MOSFET to isolate the load during an overvoltage
condition. The device allows system designers to size
the external n-channel MOSFET to their load current
and board size.
CHARGE
PUMP
5V
SET
GATE
OUT
The MAX6399 drives the MOSFET’s gate high when the
monitored DC-DC output voltage is below the program-
mable overvoltage threshold, programmed through
SET. An internal charge-pump circuit provides a guar-
anteed 10V gate-to-source drive to ensure low input-to-
load voltage drops in normal operating modes. When
the monitored DC-DC output voltage rises above the
user-adjusted overvoltage threshold, GATE latches low,
turning off the MOSFET. The MOSFET remains off until
the power is recycled or by toggling SHDN.
0.5V
SHDN
POK
MAX6399
1.23V
GND
OUT_SET
The MAX6399 also monitors for an undervoltage condi-
tion at the input of the DC-DC converter through
OUT_SET. An active-high, open-drain, power-good out-
put can be used to drive the EN input, notifying the sys-
tem when the monitored voltage is below the adjusted
undervoltage voltage threshold.
Figure 1. Functional Diagram
_______________________________________________________________________________________
5
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
The MAX6399 includes internal thermal-shutdown pro-
tection, disabling the external MOSFET if the device
reaches overtemperature conditions.
V
OV
V
IN
= 4V
= 14V
4V
V
DC_DC
Shutdown Control
500mV/div
The MAX6399 active-low SHDN input turns off the exter-
nal MOSFET, disconnecting the load and reducing
power consumption. After power is applied and SHDN
is driven above its logic-high voltage, there is a 100µs
delay before GATE begins to enhance. SHDN is also uti-
lized to unlatch GATE after an overvoltage condition has
been removed.
3V
V
GATE
10V/div
V
OUT
10V/div
GATE Voltage
The MAX6399 uses a high-efficiency charge pump to
400ns/div
generate the GATE voltage. Upon V exceeding the
IN
5V (typ) UVLO threshold, GATE enhances 10V above
IN (for V ≥ 14V) with a 100µA pullup current. An over-
IN
Figure 2. GATE Timing Diagram
voltage condition occurs when the voltage at SET pulls
above its 0.5V threshold. When the overvoltage fault
occurs (SET = 0.5V), GATE latches off, which discon-
nects the load from the power source (see Figure 2).
After the overvoltage fault has disappeared, the fault
can be unlatched by toggling SHDN or recycling the
MAX6399 input.
DC-DC
CONVERTER
V
OUT
= 1.8V
OUT
IN
GND
DC-DC Output Overvoltage Protection
The MAX6399 overvoltage protection features a fast com-
parator that disconnects the load from the main power
line when an overvoltage condition occurs at the output of
a DC-DC converter. When an overvoltage condition is
sensed, the MAX6399 latches GATE off, disconnecting
the power source from the DC-DC input. To unlatch
GATE after an overvoltage fault has disappeared, recycle
IN or toggle SHDN.
GATE
OUT
SET
IN
V
IN
R1
R2
MAX6399
GND
Setting Output Overvoltage Threshold (SET)
SET provides an accurate means of monitoring a sys-
tem voltage for an overvoltage fault. Use a resistor-
divider network to set the desired overvoltage condition
(Figure 2). SET has a rising 0.5V threshold.
Figure 3. Output Overvoltage Protection Configuration
Use the following formula to calculate R2:
R
TOTAL
Begin by selecting the total end-to-end resistance,
R2 = V
×
TH
R
= R1 + R2. Choose R
to yield a total cur-
TOTAL
V
TOTAL
OV
rent equivalent to a minimum 100 x I
(SET’s input
SET
bias current) at the desired overvoltage threshold.
where V is the 0.5V SET rising threshold and V is the
TH
OV
overvoltage condition at the output of a DC-DC converter,
For example, with an overvoltage threshold set to 1.8V:
R2 = 100kΩ, R
= R2 + R1, where R1 = 260kΩ.
TOTAL
R
< 1.8V/(100 x I
), where I
is SET’s 50nA
TOTAL
input bias current.
SET
SET
Use a 261kΩ standard resistor.
Using a lower value for total resistance dissipates more
power but provides slightly better accuracy.
R
< 360kΩ
TOTAL
6
_______________________________________________________________________________________
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
where I
is GATE’s 100µA sourcing current, I
LOAD
Monitoring for DC-DC Input
Undervoltage Conditions
GATE
is the load current at the DC-DC output at startup and
is the ouput’s capacitor. However, most DC-DC
C
The MAX6399 can be used to monitor for an undervolt-
age condition at the input of a DC-DC converter or
another system voltage by connecting an external resis-
tor-divider at OUT_SET (Figure 4). Use the following
OUT
converters have soft-start (or peak current limiting)
functions that control inrush current.
Input Overvoltage Protection
The MAX6399 also allows overvoltage protection at the
input supply (see Figure 6). When the programmed
overvoltage threshold is tripped, the internal fast com-
parator turns off the external MOSFET, latching GATE
formula to calculate the undervoltage threshold (V ).
UV
Begin by selecting the total end-to-end resistance,
R
= R1 + R2. Choose R
to yield a total cur-
TOTAL
TOTAL
rent equivalent to a minimum 100 x I
(SET’s input
SET
bias current) at the desired overvoltage threshold.
and OUT low within t
disconnecting the power
OV
source from the load. To unlatch the MAX6399 after an
For example, with an undervoltage threshold set to 9V:
overvoltage fault, recycle IN or toggle SHDN.
R
< 9V/(100 x I
), where I
is SET’s 50nA
SET
TOTAL
SET
input bias current.
Input Transients Clamping
During hot plug-in/unplug, stray inductance in the
power path may cause voltage ringing above the nor-
mal input DC value, which may exceed the MAX6399’s
80V maximum supply rating. An input transient such as
that caused by lightning can also put a severe transient
peak voltage on the input rail. The following techniques
are recommended to reduce the effect of transients:
R
< 1.8MΩ
TOTAL
Use the following formula to calculate R2:
R
TOTAL
R2 = V
×
TH(OUT _SET)
V
UV
where V
threshold and V
is the 1.23V OUT_SET rising
TH(OUT_SET)
• Minimize stray inductance in the power path using
wide traces, and minimize loop area including the
power traces and the return ground path.
is the undervoltage condition at the
UV
input of a DC-DC converter.
R2 = 246kΩ, R
= R2 + R1, where R1 = 1.554MΩ.
TOTAL
• Add a zener diode or transient voltage suppressor
(TVS) rated below the IN absolute maximum rating
(Figure 7).
Use a 1.54MΩ standard resistor.
Using a lower value for total resistance dissipates more
power but provides slightly better accuracy.
• Add a resistor in series with IN to limit transient cur-
rent going into the input.
Power-OK (POK) Output
POK is an open-drain output that goes low when
OUT_SET falls below its 1.23V (typ) threshold voltage.
Connect a pullup resistor from POK to a supply voltage.
POK asserts high when OUT_SET ramps above 1.23V
typical threshold. POK provides a valid output level
TO DC-DC
CONTROLLER
INPUT
down to V = 1.5V.
IN
GATE
OUT
Applications Information
IN
V
IN
Inrush/Slew-Rate Control
Inrush current control can be implemented by placing a
capacitor at GATE (Figure 5) to slowly ramp up the
GATE, thus limiting the inrush current and controlling
GATE’s slew rate during initial turn-on. The inrush cur-
rent can be approximated using the following formula:
R3
R4
MAX6399
3.3V
OUT_SET
POK
GND
C
OUT
I
=
× I
+ I
INRUSH
GATE LOAD
TO DC-DC
ENABLE
C
GATE
Figure 4. Setting the Undervoltage Threshold
_______________________________________________________________________________________
7
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
DC-DC
CONVERTER
TO DC-DC
CONTROLLER
INPUT
V
OUT
IN
IN
C
LOAD
GND
GATE
IN
OUT
IN
IN
LOAD
MAX6399
MAX6399
GATE
OUT
SET
C
GATE
GND
GND
Figure 5. The MAX6399 Controlling GATE Inrush Current
Figure 6. Input Overvoltage Protection Configuration
Connecting a positive battery voltage to the drain of Q1
(Figure 8b) produces forward bias in its body diode,
which clamps the source voltage one diode drop below
the drain voltage. When the source voltage exceeds
Q1’s threshold voltage, Q1 turns on. Once the FET is
on, the battery is fully connected to the system and can
deliver power to the device and the load.
V
BATT
1kΩ
LOAD
IN
An incorrectly inserted battery reverse-biases the FET’s
body diode. The gate remains at the ground potential.
The FET remains off and disconnects the reversed bat-
tery from the system. The zener diode and resistor com-
bination prevent damage to the p-channel MOSFET
during an overvoltage condition.
60V
TVS
MAX6399
GATE
OUT
Thermal Shutdown
The MAX6399 thermal-shutdown feature monitors the
PC board temperature of the external MOSFET when
the devices sit on the same thermal island. Good ther-
mal contact between the MAX6399 and the external
n-channel MOSFET is essential for the thermal-shut-
down feature to effectively operate. Place the n-channel
MOSFET as close as possible to OUT.
GND
Figure 7. Protecting the MAX6399 Input from High-Voltage
Transients
When the MAX6399 junction temperature exceeds T =
J
+150°C, the thermal sensor signals the shutdown logic,
turning off the GATE output, allowing the device to cool.
The thermal sensor turns GATE on after the IC’s junc-
tion temperature cools by 20°C. For continuous opera-
tion, do not exceed the absolute maximum junction-
Reverse Voltage Protection
Use a diode or p-channel MOSFET to protect the
MAX6399 during a reverse voltage insertion (Figures 8a,
8b). Low p-channel MOSFET on-resistance of 30mΩ or
less yields a forward-voltage drop of only a few millivolts
(versus hundreds of millivolts for a diode, Figure 8a)
thus improving efficiency in battery-operated devices.
temperature rating of T = +160°C.
J
8
_______________________________________________________________________________________
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
Q1
IN
IN
LOAD
LOAD
V
BATT
V
BATT
MAX6399
MAX6399
GATE
OUT
GATE
OUT
GND
GND
(a)
(b)
Figure 8. Reverse Voltage Protection Using a Diode or p-Channel MOSFET
MOSFET Selection
Chip Information
Select external MOSFETs according to the application
TRANSISTOR COUNT: 590
PROCESS: BiCMOS
current level. The MOSFETs on-resistance (R
)
DS(ON)
should be chosen low enough to have minimum voltage
drop at full load to limit the MOSFET power dissipation.
_______________________________________________________________________________________
9
High-Voltage, Overvoltage/Undervoltage,
Protection Switch Controller
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
D2
D
A2
PIN 1 ID
N
0.35x0.35
b
[(N/2)-1] x e
REF.
PIN 1
INDEX
AREA
E
E2
DETAIL A
e
A1
k
C
C
L
L
A
L
L
e
e
PACKAGE OUTLINE, 6,8,10 & 14L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
1
-DRAWING NOT TO SCALE-
21-0137
G
2
COMMON DIMENSIONS
SYMBOL
MIN.
0.70
2.90
2.90
0.00
0.20
MAX.
0.80
3.10
3.10
0.05
0.40
A
D
E
A1
L
k
0.25 MIN.
0.20 REF.
A2
PACKAGE VARIATIONS
DOWNBONDS
ALLOWED
PKG. CODE
T633-1
N
6
D2
E2
e
JEDEC SPEC
b
[(N/2)-1] x e
1.90 REF
1.90 REF
1.95 REF
1.95 REF
1.95 REF
2.00 REF
2.40 REF
2.40 REF
1.50±0.10 2.30±0.10 0.95 BSC
1.50±0.10 2.30±0.10 0.95 BSC
1.50±0.10 2.30±0.10 0.65 BSC
1.50±0.10 2.30±0.10 0.65 BSC
1.50±0.10 2.30±0.10 0.65 BSC
MO229 / WEEA
MO229 / WEEA
MO229 / WEEC
MO229 / WEEC
MO229 / WEEC
0.40±0.05
0.40±0.05
0.30±0.05
0.30±0.05
0.30±0.05
NO
NO
T633-2
6
T833-1
8
NO
T833-2
8
NO
T833-3
8
YES
NO
T1033-1
T1433-1
T1433-2
10
14
14
1.50±0.10 2.30±0.10 0.50 BSC MO229 / WEED-3 0.25±0.05
1.70±0.10 2.30±0.10 0.40 BSC
1.70±0.10 2.30±0.10 0.40 BSC
- - - -
- - - -
0.20±0.05
0.20±0.05
YES
NO
PACKAGE OUTLINE, 6,8,10 & 14L,
TDFN, EXPOSED PAD, 3x3x0.80 mm
2
-DRAWING NOT TO SCALE-
21-0137
G
2
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implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
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