MAX9995ETX+TD [MAXIM]
Double Balanced Mixer, 1700MHz Min, 2200MHz Max, BICMOS, 6 X 6 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MO-220, TQFN-36;
| 型号： | MAX9995ETX+TD |
| 厂家： | 
MAXIM INTEGRATED PRODUCTS |
| 描述： | Double Balanced Mixer, 1700MHz Min, 2200MHz Max, BICMOS, 6 X 6 MM, 0.80 MM HEIGHT, ROHS COMPLIANT, MO-220, TQFN-36 信息通信管理 |
| 文件： | 总13页 (文件大小：359K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
19-3383; Rev 0; 8/04
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
General Description
Features
♦ 1700MHz to 2200MHz RF Frequency Range
The MAX9995 dual, high-linearity, downconversion
mixer provides 6.1dB gain, +25.6dBm IIP3, and 9.8dB
NF for UMTS/WCDMA, DCS, and PCS base-station
applications. The MAX9995 is ideal for low-side LO
injection. (For a mixer variant optimized for high-side
LO injection, contact the factory.)
♦ 1400MHz to 2000MHz LO Frequency Range
(MAX9995)
♦ 1900MHz to 2400MHz LO Frequency Range
(Contact Factory)
This device integrates baluns in the RF and LO ports, a
dual-input LO selectable switch, an LO buffer, two double-
balanced mixers, and a pair of differential IF output ampli-
fiers. The MAX9995 requires a typical LO drive of 0dBm
and supply current is guaranteed to be below 380mA.
♦ 40MHz to 350MHz IF Frequency Range
♦ 6.1dB Conversion Gain
♦ +25.6dBm Input IP3
♦ 9.8dB Noise Figure
These devices are available in a compact 36-pin thin
QFN package (6mm × 6mm) with an exposed paddle.
Electrical performance is guaranteed over the extended
♦ 66dBc 2RF–2LO Spurious Rejection at
P
RF
= -10dBm
♦ Dual Channels Ideal for Diversity Receiver
temperature range, from T = -40°C to +85°C.
C
Applications
♦ Integrated LO Buffer
Applications
PHS/PAS Base Stations
♦ Integrated RF and LO Baluns for Single-Ended
UMTS/WCDMA and
cdma2000® 3G Base
Stations
Inputs
Fixed Broadband
Wireless Access
♦ Low -3dBm to +3dBm LO Drive
♦ Built-In SPDT LO Switch with 50dB LO1–LO2
DCS1800 and EDGE
Base Stations
Wireless Local Loop
Private Mobile Radio
Military Systems
Isolation and 50ns Switching Time
♦ 44dB Channel-to-Channel Isolation
PCS1900 and EDGE
Base Stations
Pin Configuration/
Functional Diagram
Ordering Information
PART
MAX9995ETX
MAX9995ETX-T
TEMP RANGE
PIN-PACKAGE
TOP VIEW
T ** = -40°C to +85°C 36 Thin QFN-EP*
C
T
= -40°C to +85°C 36 Thin QFN-EP*
C
C
36 Thin QFN-EP*
= -40°C to +85°C
1
27
MAX9995ETX+D
T
RFMAIN
LO2
lead free, bulk
MAX9995
2
3
4
5
6
7
8
9
26
TAPMAIN
GND
GND
36 Thin QFN-EP*
= -40°C to +85°C
MAX9995ETX+TD
T
C
lead free, T/R
25
24
23
22
21
20
19
GND
*EP = Exposed pad.
V
CC
GND
**T = Case temperature.
C
GND
LOSEL
GND
V
CC
V
CC
GND
TAPDIV
RFDIV
EXPOSED
PADDLE
GND
LO1
6mm x 6mm THIN QFN (EXPOSED PADDLE)
EXPOSED PADDLE ON THE BOTTOM OF THE PACKAGE
cdma2000 is a registered trademark of Telecommunications
Industry Association.
________________________________________________________________ Maxim Integrated Products
1
For pricing, delivery, and ordering information, please contact Maxim/Dallas Direct! at
1-888-629-4642, or visit Maxim’s website at www.maxim-ic.com.
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
ABSOLUTE MAXIMUM RATINGS
CC
V
........................................................................-0.3V to +5.5V
Continuous Power Dissipation (T = +70°C)
A
LO1, LO2 to GND ............................................................... 0.3V
IFM_, IFD_, IFM_SET, IFD_SET, LOSEL,
36-Lead Thin QFN (derate 26mW/°C
above +70°C).............................................................2100mW
LO_ADJ_M, LO_ADJ_D to GND.............-0.3V to (V
+ 0.3V)
θ
θ
.................................................................................+38°C/W
................................................................................+7.4°C/W
CC
JA
JC
RFMAIN, RFDIV, and LO_ Input Power..........................+20dBm
RFMAIN, RFDIV Current (RF is DC shorted to GND through
balun)..................................................................................50mA
Operating Temperature Range (Note A) ....T = -40°C to +85°C
C
Maximum Junction Temperature Range..........................+150°C
Storage Temperature Range.............................-65°C to +150°C
Lead Temperature (soldering, 10s) .................................+300°C
Note A: T is the temperature on the exposed paddle of the package.
C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
DC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, no input RF or LO signals applied, V
= 4.75V to 5.25V, T = -40°C to +85°C. Typical values are at V
C CC
CC
= 5.0V, T = +25°C, unless otherwise noted.)
C
PARAMETER
Supply Voltage
SYMBOL
CONDITIONS
MIN
TYP
5
MAX
5.25
380
90
UNITS
V
4.75
V
CC
CC
Total supply current
332
82
V
V
(pin 16)
(pin 30)
CC
CC
Supply Current
I
97
110
90
mA
IFM+/IFM- (total of both)
IFD+/IFD- (total of both)
70
70
90
LOSEL Input High Voltage
LOSEL Input Low Voltage
LOSEL Input Current
V
2
V
V
IH
V
0.8
IL
I
and I
-10
+10
µA
IL
IH
AC ELECTRICAL CHARACTERISTICS
(Typical Application Circuit, V
= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources, P
= -3dBm to +3dBm, f
=
=
CC
LO
RF
1700MHz to 2200MHz, f = 1400MHz to 2000MHz, f = 200MHz, with f > f , T = -40°C to +85°C. Typical values are at V
LO
IF
RF
LO
C
CC
5.0V, P = 0dBm, f = 1900MHz, f = 1700MHz, f = 200MHz, and T = +25°C, unless otherwise noted.) (Notes 1, 2)
LO
RF
LO
IF
C
PARAMETER
SYMBOL
CONDITIONS
MIN
1700
1400
1900
TYP
MAX UNITS
RF Frequency
f
(Note 7)
(Note 7)
2200
2000
2400
MHz
MHz
MHz
RF
LO Frequency
f
LO
(Contact factory) (Note 7)
Meeting RF and LO frequency ranges;
IF matching components affect the IF
frequency range (Note 7)
IF Frequency
f
IF
40
350
MHz
f
RF
f
RF
f
RF
= 1710MHz to 1875MHz
= 1850MHz to 1910MHz
= 2110MHz to 2170MHz
6
Conversion Gain
G
6.2
6.1
dB
C
2
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
AC ELECTRICAL CHARACTERISTICS (continued)
(Typical Application Circuit, V
= 4.75V to 5.25V, RF and LO ports are driven from 50Ω sources, P
= -3dBm to +3dBm, f
=
=
CC
LO
RF
1700MHz to 2200MHz, f = 1400MHz to 2000MHz, f = 200MHz, with f > f , T = -40°C to +85°C. Typical values are at V
LO
IF
RF
LO
C
CC
5.0V, P = 0dBm, f = 1900MHz, f = 1700MHz, f = 200MHz, and T = +25°C, unless otherwise noted.) (Notes 1, 2)
LO
RF
LO
IF
C
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX UNITS
f
RF
f
RF
f
RF
= 1710MHz to 1875MHz
0.5
1
V
= 5.0V,
= +25°C,
= 0dBm,
= -10dBm
CC
T
C
Gain Variation from Nominal
P
P
= 1850MHz to 1910MHz
= 2110MHz to 2170MHz
0.5
0.5
1
1
dB
LO
RF
(Note 3)
Gain Variation with Temperature
Noise Figure
0.75
9.7
dB
dB
f
RF
f
RF
f
RF
= 1710MHz to 1875MHz
= 1850MHz to 1910MHz
= 2110MHz to 2170MHz
No blockers
present
NF
9.8
9.9
8dBm blocker tone applied to RF port at
Noise Figure (with Blocker)
2000MHz, f = 1900MHz, f = 1710MHz,
22
dB
RF
LO
P
= -3dBm
LO
Input 1dB Compression Point
P
(Note 3)
9.5
23
12.6
25.6
dBm
dBm
1dB
Input Third-Order Intercept Point
IIP3
(Notes 3, 4)
f
f
f
= 1900MHz,
= 1700MHz,
RF
P
P
P
P
= -10dBm
= -5dBm
= -10dBm
= -5dBm
66
61
88
78
RF
RF
RF
RF
2RF-2LO Spur Rejection
3RF-3LO Spur Rejection
2 x 2
3 x 3
dBc
dBc
LO
= 1800MHz (Note 3)
SPUR
f
f
f
= 1900MHz,
= 1700MHz,
= 1766.7MHz (Note 3)
RF
70
60
LO
SPUR
Maximum LO Leakage at RF Port
Maximum 2LO Leakage at RF Port
Maximum LO Leakage at IF Port
Minimum RF to IF Isolation
LO1-LO2 Isolation
f
f
f
f
= 1400MHz to 2000MHz
= 1400MHz to 2000MHz
= 1400MHz to 2000MHz
-29
-17
-25
37
dBm
dBm
dBm
dB
LO
LO
LO
RF
= 1700MHz to 2200MHz, f = 200MHz
IF
P
= 0dBm, P
= 0dBm (Note 5)
40
40
50.5
dB
LO1
LO2
P
= -10dBm, RFMAIN (RFDIV)
RF
power measured at IFDIV (IFMAIN),
relative to IFMAIN (IFDIV),
Minimum Channel-to-Channel
Isolation
44
dB
all unused parts terminated at 50Ω
LO Switching Time
RF Return Loss
50% of LOSEL to IF settled to within 2°
50
14
18
21
21
ns
dB
LO port selected
LO Return Loss
IF Return Loss
dB
dB
LO port unselected
LO driven at 0dBm, RF terminated into 50Ω
Note 1: Guaranteed by design and characterization.
Note 2: All limits reflect losses of external components. Output measurements taken at IF outputs of Typical Application Circuit.
Note 3: Production tested.
Note 4: Two tones 3MHz spacing, -5dBm per tone at RF port.
Note 5: Measured at IF port at IF frequency. f
and f
are offset by 1MHz.
LO1
LO2
Note 6: IF return loss can be optimized by external matching components.
Note 7: Operation outside this frequency band is possible but has not been characterized. See the Typical Operating Characteristics.
_______________________________________________________________________________________
3
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics
(Typical Application Circuit, V
= 5.0V, P = -5dBm, P = 0dBm, LO is low-side injected for a 200MHz IF, T = +25°C.)
CC
RF
LO
C
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
CONVERSION GAIN vs. RF FREQUENCY
8.0
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
6.5
6.4
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
5.5
6.5
6.4
6.3
6.2
6.1
6.0
5.9
5.8
5.7
5.6
5.5
P
= -3dBm to +3dBm
LO
V
= 4.75V
CC
T
= -20°C
C
T
= +25°C
C
V
= 5.0V
CC
T
= +85°C
C
V
= 5.25V
1800
CC
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
1700
1900
2000
2100
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
INPUT IP3 vs. RF FREQUENCY
26.8
26.4
26.0
25.6
25.2
24.8
24.4
26.6
26.4
26.2
26.0
25.8
25.6
25.4
25.2
27.0
26.6
26.2
25.8
25.4
25.0
24.6
T
= +85°C
C
P
= 0dBm
LO
V
= 5.25V
CC
P
= +3dBm
LO
T
= -20°C
C
T
= +25°C
C
V
= 4.75V
CC
V
= 5.0V
CC
P
= -3dBm
1900
LO
1700
1800
1900
2000
2100
2200
1700
1800
2000
2100
2200
1700
1800
1900
2000
2100
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
2RF - 2LO vs. FUNDAMENTAL FREQUENCY
2RF - 2LO vs. FUNDAMENTAL FREQUENCY
2RF - 2LO vs. FUNDAMENTAL FREQUENCY
75
70
65
60
55
50
45
40
35
30
66
64
62
60
58
56
54
52
50
66
64
62
60
58
56
54
52
50
P
= -5dBm
RF
P
= -5dBm
P
= -5dBm
RF
RF
T
= +85°C
C
P
= -3dBm
LO
V
= 4.75V
CC
P
= 0dBm
V
= 5.25V
CC
LO
V
= 5.0V
T
= +25°C
CC
C
P
= +3dBm
LO
T
= -20°C
C
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
4
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= 5.0V, P = -5dBm, P = 0dBm, LO is low-side injected for a 200MHz IF, T = +25°C.)
CC
RF
LO
C
3RF - 3LO vs. FUNDAMENTAL FREQUENCY
3RF - 3LO vs. FUNDAMENTAL FREQUENCY
3RF - 3LO vs. FUNDAMENTAL FREQUENCY
90
88
86
84
82
80
78
76
74
72
70
88
86
84
82
80
78
76
74
72
88
86
84
82
80
78
76
74
72
P
= -5dBm
RF
P
= -5dBm
P
= -5dBm
RF
RF
P
= 0dBm
V
= 5.0V
LO
CC
T
= -20°C
C
P
= -3dBm
LO
T
= +25°C
C
P
= +3dBm
LO
V
= 5.25V
CC
T
= +85°C
C
V
= 4.75V
CC
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
INPUT P
vs. RF FREQUENCY
1dB
1dB
1dB
14.4
14.0
13.6
13.2
12.8
12.4
13.8
13.7
13.6
13.5
13.4
13.3
13.2
13.1
13.0
12.9
14.4
14.2
14.0
13.8
13.6
13.4
13.2
13.0
12.8
12.6
12.4
P
= 0dBm
LO
V
= 5.25V
CC
T
= +85°C
T
= +25°C
C
C
V
= 5.0V
CC
P
= -3dBm
LO
P
= +3dBm
2100
LO
V
= 4.75V
1800
CC
T
= -20°C
C
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2200
1700
1900
2000
2100
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
LO SWITCH ISOLATION vs. LO FREQUENCY
LO SWITCH ISOLATION vs. LO FREQUENCY
LO SWITCH ISOLATION vs. LO FREQUENCY
55
54
53
52
51
50
49
48
47
46
45
54
53
52
51
50
49
48
47
54
53
52
51
50
49
48
47
V
= 4.75V TO 5.25V
CC
T
= -20°C
C
P
= -3dBm
LO
P
= 0dBm
LO
P
= +3dBm
LO
T
= +25°C
C
T
= +85°C
C
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
_______________________________________________________________________________________
5
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= 5.0V, P = -5dBm, P = 0dBm, LO is low-side injected for a 200MHz IF, T = +25°C.)
CC
RF
LO
C
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
CHANNEL ISOLATION vs. RF FREQUENCY
80
70
60
50
40
30
20
90
80
70
60
50
40
30
90
80
70
60
50
40
30
T
= +85°C
T
= +25°C
C
C
V
= 4.75V
P
= 0dBm
V
= 5.0V
CC
LO
CC
P
= +3dBm
LO
T
= -20°C
C
P
= -3dBm
LO
V
= 5.25V
CC
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
LO LEAKAGE AT IF PORT vs. LO FREQUENCY
-20
-25
-25
-25
-30
-35
-40
-45
-50
-55
-60
-30
-30
-35
-40
-45
-50
V
= 5.25V
CC
P
= -3dBm
LO
T
= -20°C
C
-35
-40
V
= 4.75V
CC
-45
-50
-55
T
= +25°C
C
P
= +3dBm
P
= 0dBm
LO
LO
T
= +85°C
C
V
= 5.0V
CC
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
-20
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
LO LEAKAGE AT RF PORT vs. LO FREQUENCY
-20
-20
-25
-30
-35
-40
-45
-50
-55
-60
V
= 4.75V TO 5.25V
CC
-25
-30
-35
-40
-45
-25
T
= -20°C
C
-30
-35
P
= +3dBm
LO
-40
-45
-50
T
= +25°C
C
T
= +85°C
C
P
= -3dBm
LO
-50
-55
P
= 0dBm
LO
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
6
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= 5.0V, P = -5dBm, P = 0dBm, LO is low-side injected for a 200MHz IF, T = +25°C.)
CC
RF
LO
C
RF TO IF ISOLATION vs. RF FREQUENCY
RF TO IF ISOLATION vs. RF FREQUENCY
RF TO IF ISOLATION vs. RF FREQUENCY
45
44
43
42
41
40
39
38
46
43.0
42.5
42.0
41.5
41.0
40.5
40.0
39.5
P
= -3dBm TO +3dBm
LO
45
44
T
= +85°C
C
V
= 5.25V
CC
43
42
41
40
39
38
37
36
V
= 4.75V
CC
V
= 5.0V
2100
CC
T
= +25°C
C
T
= -20°C
C
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2100
2200
1700
1800
1900
2000
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
NOISE FIGURE vs. RF FREQUENCY
10.5
10.4
10.3
10.2
10.1
10.0
9.9
14
13
12
11
10
9
10.2
10.1
10.0
9.9
P
= -3dBm
LO
V
= 5.25V
CC
T
= +85°C
T
= +25°C
P
= 0dBm
C
C
LO
V
= 5.0V
CC
9.8
P
= +3dBm
2000
LO
9.8
8
T
= -20°C
C
9.7
9.7
V
= 4.75V
1900
CC
7
9.6
9.5
6
9.6
1700
1800
2000
2100
2200
1700
1800
1900
2000
2100
2200
1700
1800
1900
2100
2200
FREQUENCY (MHz)
FREQUENCY (MHz)
FREQUENCY (MHz)
LO RETURN LOSS vs. LO FREQUENCY
(LO INPUT SELECTED)
IF RETURN LOSS vs. IF FREQUENCY
RF RETURN LOSS vs. RF FREQUENCY
0
5
0
5
0
5
P
= -3dBm TO +3dBm
LO
10
15
20
25
30
35
40
45
10
15
20
25
30
10
15
20
25
P
= +3dBm
LO
P
= 0dBm
LO
P
= -3dBm
LO
40 80 120 160 200 240 280 320 360
FREQUENCY (MHz)
1700
1800
1900
2000
2100
2200
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
FREQUENCY (MHz)
_______________________________________________________________________________________
7
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Typical Operating Characteristics (continued)
(Typical Application Circuit, V
= 5.0V, P = -5dBm, P = 0dBm, LO is low-side injected for a 200MHz IF, T = +25°C.)
CC
RF
LO
C
LO RETURN LOSS vs. LO FREQUENCY
(LO INPUT UN SELECTED)
SUPPLY CURRENT vs. TEMPERATURE (T )
C
0
5
365
360
P
= -3dBm TO +3dBm
LO
355
350
10
15
20
25
30
35
V
= 5.25V
CC
345
340
335
330
325
V
= 5.0V
CC
V
= 4.75V
CC
320
315
310
1400 1500 1600 1700 1800 1900 2000
FREQUENCY (MHz)
-20
-5
10
25
40
55
70
85
°
TEMPERATURE ( C)
Pin Description
PIN
1
NAME
FUNCTION
Main Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
TAPMAIN Main Channel Balun Center Tap. Connect a 0.033µF capacitor from this pin to the board ground.
RFMAIN
2
3, 5, 7, 12, 20, 22,
24, 25, 26, 34
GND
Ground
4, 6, 10, 16, 21, 30,
36
Power Supply. Connect bypass capacitors as close to the pin as possible (see the Typical
Application Circuit).
V
CC
8
9
TAPDIV
RFDIV
Diversity Channel Balun Center Tap. Connect a 0.033µF capacitor from this pin to the ground.
Diversity Channel RF Input. Internally matched to 50Ω. Requires an input DC-blocking capacitor.
IF Diversity Amplifier Bias Control. Connect a 1.2kΩ resistor from this pin to ground to set the
bias current for the diversity IF amplifier.
11
IFD_SET
Diversity Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
(see the Typical Application Circuit).
CC
13, 14
15
IFD+, IFD-
IND_EXTD Connect a 10nH inductor from this pin to ground to increase the RF-IF and LO-IF isolation.
LO Diversity Amplifier Bias Control. Connect a 392Ω resistor from this pin to ground to set the
bias current for the diversity LO amplifier.
17
LO_ADJ_D
N.C.
18, 28
19
No Connection. Not internally connected.
Local Oscillator 1 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
LO1
23
LOSEL
Local Oscillator Select. Set this pin to high to select LO1. Set to low to select LO2.
8
_______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Pin Description (continued)
PIN
NAME
DESCRIPTION
Local Oscillator 2 Input. This input is internally matched to 50Ω. Requires an input DC-blocking
capacitor.
27
LO2
LO Main Amplifier Bias Control. Connect a 392Ω resistor from this pin to ground to set the bias
current for the main LO amplifier.
29
31
LO_ADJ_M
IND_EXTM Connect a 10nH inductor from this pin to ground to increase the RF-IF and LO-IF isolation.
Main Mixer Differential IF Output. Connect pullup inductors from each of these pins to V
(see the Typical Application Circuit).
CC
32, 33
IFM-, IFM+
IFM_SET
GND
IF Main Amplifier Bias Control. Connect a 1.2kΩ resistor from this pin to ground to set the bias
current for the main IF amplifier.
35
Exposed Ground Plane. This paddle affects RF performance and provides heat dissipation. The
paddle must be connected to ground.
Exposed Paddle
integrated LO buffer provides a high drive level to the
Detailed Description
mixer core, reducing the LO drive required at the
MAX9995’s inputs to -3dBm. The IF port incorporates a
differential output, which is ideal for providing
enhanced 2RF-2LO performance.
The MAX9995 dual, high-linearity, downconversion
mixer provides 6.1dB gain and +25.6dBm IIP3, with a
9.8dB noise figure. Integrated baluns and matching cir-
cuitry allow 50Ω single-ended interfaces to the RF and
LO ports. A single-pole, double-throw (SPDT) LO
switch provides 50ns switching time between LO
inputs, with 50dB LO-to-LO isolation. Furthermore, the
Specifications are guaranteed over broad frequency
ranges to allow for use in UMTS/WCDMA and
2G/2.5G/3G DCS1800, PCS1900, and cdma2000 base
stations. The MAX9995 is specified to operate over an
RF input range of 1700MHz to 2200MHz, an LO range
of 1400MHz to 2000MHz, and an IF range of 40MHz to
350MHz. Operation beyond this is possible; however,
performance is not characterized. This device can
operate in high-side LO injection applications with an
Table 1. Component Values
COMPONENT
VALUE
DESCRIPTION
C1, C8
4pF
Microwave capacitors (0402)
Microwave capacitors (0402)
C2, C7
10pF
extended LO range, but performance degrades as f
LO
C3, C6
0.033µF Microwave capacitors (0603)
continues to increase. For a device with better high-
side performance, contact the factory. This device is
available in a compact 6mm x 6mm, 36-pin thin QFN
package with an exposed paddle.
C4, C5, C14, C16
22pF Microwave capacitors (0402)
C9, C13, C15,
C17, C18
0.01µF Microwave capacitors (0402)
RF Input and Balun
The MAX9995’s two RF inputs (RFMAIN and RFDIV) are
internally matched to 50Ω, requiring no external match-
ing components. DC-blocking capacitors are required
as the inputs are internally DC shorted to ground
through the on-chip baluns. Input return loss is typically
14dB over the entire RF frequency range of 1700MHz
to 2200MHz.
C10, C11, C12,
C19, C20, C21
150pF
330nH
10nH
Microwave capacitors (0603)
Wire-wound high-Q inductors
(0805)
L1, L2, L4, L5
L3, L6
Wire-wound high-Q inductors
(0603)
LO Input, Switch, Buffer, and Balun
The mixers can be used for either high-side or low-side
injection applications with an LO frequency range of
1400MHz to 2000MHz. For a device with an LO fre-
quency range of 1900MHz to 2400MHz, contact the
factory. As an added feature, the MAX9995 includes an
1.21kΩ
392Ω
10Ω
1% resistors (0402)
1% resistors (0402)
1% resistors (1206)
R1, R4
R2, R5
R3, R6
4:1
(200:50)
T1, T2
IF baluns
_______________________________________________________________________________________
9
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Typical Application Circuit
C19
T1
L1
L2
IF MAIN OUTPUT
V
CC
C21
R3
4:1
R1
C20
V
CC
V
CC
L3
C18
R2
C17
C1
C16
RFMAIN
TAPMAIN
GND
LO2
RF MAIN INPUT
1
2
3
4
5
6
7
8
9
27
26
25
24
23
22
21
20
19
LO2
GND
GND
GND
MAX9995
C3
C2
V
CC
V
CC
C4
GND
LOSEL
GND
LO SELECT
V
CC
V
CC
V
CC
C5
C6
GND
TAPDIV
RFDIV
V
CC
C7
C15
EXPOSED
PADDLE
GND
LO1
RF DIV INPUT
LO1
C14
C8
V
CC
C9
R4
V
CC
R5
C13
L6
C11
T2
L5
L4
V
CC
C12
R6
IF DIV OUTPUT
4:1
C10
10 ______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
internal LO SPDT switch that can be used for frequen-
cy-hopping applications. The switch selects one of the
two single-ended LO ports, allowing the external oscil-
lator to settle on a particular frequency before it is
switched in. LO switching time is typically less than
50ns, which is more than adequate for virtually all GSM
applications. If frequency hopping is not employed, set
the switch to either of the LO inputs. The switch is con-
trolled by a digital input (LOSEL): logic high selects
LO1, and logic low selects LO2. LO1 and LO2 inputs
are internally matched to 50Ω, requiring only a 22pF
DC-blocking capacitor.
The IF output impedance is 200Ω (differential). For
evaluation, an external low-loss 4:1 (impedance ratio)
balun transforms this impedance down to a 50Ω single-
ended output (see the Typical Application Circuit).
Bias Resistors
Bias currents for the LO buffer and the IF amplifier are
optimized by fine tuning the resistors R1, R2, R4, and R5.
If reduced current is required at the expense of perfor-
mance, contact factory. If the 1% bias resistor values
are not readily available, substitute standard 5% values.
Layout Considerations
A properly designed PC board is an essential part of
any RF/microwave circuit. Keep RF signal lines as short
as possible to reduce losses, radiation, and induc-
tance. For the best performance, route the ground pin
traces directly to the exposed pad under the package.
The PC board exposed pad MUST be connected to the
ground plane of the PC board. It is suggested that mul-
tiple vias be used to connect this pad to the lower-level
ground planes. This method provides a good RF/ther-
mal-conduction path for the device. Solder the exposed
pad on the bottom of the device package to the PC
board. The MAX9995 Evaluation Kit can be used as a
reference for board layout. Gerber files are available
upon request at www.maxim-ic.com.
A two-stage internal LO buffer allows a wide input
power range for the LO drive. All guaranteed specifica-
tions are for an LO signal power from -3dBm to +3dBm.
The on-chip low-loss balun, along with an LO buffer,
drives the double-balanced mixer. All interfacing and
matching components from the LO inputs to the IF out-
puts are integrated on-chip.
High Linearity Mixers
The core of the MAX9995 is a pair of double-balanced,
high-performance passive mixers. Exceptional linearity
is provided by the large LO swing from the on-chip LO
buffer. When combined with the integrated IF ampli-
fiers, the cascaded IIP3, 2RF-2LO rejection, and NF
performance is typically +25.6dBm, 66dBc, and 9.8dB,
respectively.
Power-Supply Bypassing
Proper voltage-supply bypassing is essential for high-
Differential IF Output Amplifiers
The MAX9995 mixers have an IF frequency range of
40MHz to 350MHz. The differential, open-collector IF
frequency circuit stability. Bypass each V
pin with a
CC
capacitor as close to the pin as possible (Typical
Application Circuit).
output ports require external pullup inductors to V
.
CC
Note that these differential outputs are ideal for provid-
ing enhanced 2RF-2LO rejection performance. Single-
ended IF applications require a 4:1 balun to transform
the 200Ω differential output impedance to a 50Ω single-
ended output. After the balun, VSWR is typically 1.5:1.
Exposed Pad RF/Thermal Considerations
The exposed paddle (EP) of the MAX9995’s 36-pin thin
QFN-EP package provides a low thermal-resistance
path to the die. It is important that the PC board on
which the MAX9995 is mounted be designed to con-
duct heat from the EP. In addition, provide the EP with
a low-inductance path to electrical ground. The EP
MUST be soldered to a ground plane on the PC board,
either directly or through an array of plated via holes.
Applications Information
Input and Output Matching
The RF and LO inputs are internally matched to 50Ω.
No matching components are required. Return loss at
each RF port is typically 14dB over the entire input
range (1700MHz to 2200MHz), and return loss at the
LO ports is typically 18dB (1400MHz to 2000MHz). RF
and LO inputs require only DC-blocking capacitors for
interfacing.
Chip Information
TRANSISTOR COUNT: 1414
PROCESS: SiGe BiCMOS
______________________________________________________________________________________ 11
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Package Information
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
D2
D
C
L
b
D/2
D2/2
k
E/2
E2/2
(NE-1) X
e
C
L
E
E2
k
L
e
(ND-1) X
e
e
L
C
C
L
L
L1
L
L
e
e
A
A1
A2
PACKAGE OUTLINE
36, 40, 48L THIN QFN, 6x6x0.8mm
1
E
21-0141
2
12 ______________________________________________________________________________________
Dual, SiGe, High-Linearity, 1700MHz to 2200MHz
Downconversion Mixer with LO Buffer/Switch
Package Information (continued)
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information,
go to www.maxim-ic.com/packages.)
NOTES:
1. DIMENSIONING & TOLERANCING CONFORM TO ASME Y14.5M-1994.
2. ALL DIMENSIONS ARE IN MILLIMETERS. ANGLES ARE IN DEGREES.
3. N IS THE TOTAL NUMBER OF TERMINALS.
4. THE TERMINAL #1 IDENTIFIER AND TERMINAL NUMBERING CONVENTION SHALL CONFORM TO JESD 95-1
SPP-012. DETAILS OF TERMINAL #1 IDENTIFIER ARE OPTIONAL, BUT MUST BE LOCATED WITHIN THE
ZONE INDICATED. THE TERMINAL #1 IDENTIFIER MAY BE EITHER A MOLD OR MARKED FEATURE.
5. DIMENSION b APPLIES TO METALLIZED TERMINAL AND IS MEASURED BETWEEN 0.25 mm AND 0.30 mm
FROM TERMINAL TIP.
6. ND AND NE REFER TO THE NUMBER OF TERMINALS ON EACH D AND E SIDE RESPECTIVELY.
7. DEPOPULATION IS POSSIBLE IN A SYMMETRICAL FASHION.
8. COPLANARITY APPLIES TO THE EXPOSED HEAT SINK SLUG AS WELL AS THE TERMINALS.
9. DRAWING CONFORMS TO JEDEC MO220, EXCEPT FOR 0.4mm LEAD PITCH PACKAGE T4866-1.
PACKAGE OUTLINE
36, 40, 48L THIN QFN, 6x6x0.8mm
10. WARPAGE SHALL NOT EXCEED 0.10 mm.
2
E
21-0141
2
Maxim cannot assume responsibility for use of any circuitry other than circuitry entirely embodied in a Maxim product. No circuit patent licenses are
implied. Maxim reserves the right to change the circuitry and specifications without notice at any time.
Maxim Integrated Products, 120 San Gabriel Drive, Sunnyvale, CA 94086 408-737-7600 ____________________ 13
© 2004 Maxim Integrated Products
Printed USA
is a registered trademark of Maxim Integrated Products.
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