2N5832 [MCC]
NPN Transistor Plastic-case Bipolar; NPN晶体管塑双极情况
| 型号： | 2N5832 |
| 厂家： | 
Micro Commercial Components |
| 描述： | NPN Transistor Plastic-case Bipolar |
| 文件： | 总1页 (文件大小：70K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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2N5832
Features
·
Through Hole Package
Plastic-case Bipolar
NPN Transistor
Pin Configuration
Bottom View
C
B
E
Electrical Characteristics @ 25°C Unless Otherwise Specified
TO-92
Symbol
Parameter
Min
Max
Units
A
E
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICBO
Collector-Emitter Breakdown Voltage
(IC=300mAdc)
140
160
5.0
Vdc
Vdc
Collector-Base Breakdown Voltage
B
Emitter-Base Breakdown Voltage
Vdc
Collector-Base Breakdown Current
(VCE=120Vdc)
50
nAdc
ON CHARACTERISTICS
hFE
DC Current Gain*
C
175
500
0.2
(IC=10mAdc, VCE=5.0Vdc)
VCE(sat)
Collector-Emitter Saturation Voltage
(IC=10mAdc)
Vdc
D
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=10mAdc)
Output Capacitance
100
MHz
pF
G
Cob
NF
4.0
----
Noise Figure
DIMENSIONS
dB
INCHES
MIN
.175
.175
.500
.016
.135
.095
MM
MIN
DIM
A
B
C
D
MAX
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
.185
.185
---
.020
.145
.105
4.45
4.46
12.7
0.41
3.43
2.42
Note:
Maximum at typical JEDEC condition
V
(BR)CER @ R=10 OHMS
E
G
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