BAT54TBRW-TP [MCC]
Rectifier Diode, Schottky, 4 Element, 0.2A, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6;
| 型号： | BAT54TBRW-TP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, Schottky, 4 Element, 0.2A, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6 肖特基二极管 光电二极管 |
| 文件： | 总3页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
BAT54
THRU
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21201 Itasca Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
BAT54S
Features
·
·
·
Low Forward Voltage
Surface Mount device
Very small conduction losses
250mWatt, 30Volt
Schottky Barrier Diode
MCC
Catalog
Number
BAT54
BAT54A
BAT54C
BAT54S
Device
Marking
Pin
Type
Configuration
(See Page 3)
SOT-23
L4P
L42
L43
L44
Single
Dual
Dual
Dual
Figure 1
Figure 2
Figure 3
Figure 4
A
D
B
C
F
E
Maximum Ratings
Continuos Reverse Voltage
Forward Current
VR
IF
30V
0.3A
H
G
J
Non-Repetitive Peak Forward Current t<1s
Total Power Dissipation @ TA = 25°C
Storage Temperature Range
IFSM
PD
1.0mA
250mW
K
Tstg
Tj
-55°C to 150°C
150°C
DIMENSIONS
MM
Junction Temperature
INCHES
MIN
Soldering temperature during 10s
Tj
260°C
DIM
A
B
C
D
E
MAX
.120
.098
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
Electrical Characteristics @ 25 °C Unless Otherwise Specified
F
Ratings
Forward Voltage at
IF = 0.1mA
Symbol
Max.
Notes
G
H
J
.085
.37
240mV
320mV
400mV
500mV
900mV
2.0 uA
>30V
K
IF = 1mA
IF = 10mA
IF = 30mA
IF = 100mA
VF
Suggested Solder
Pad Layout
.031
.800
Reverse Current
Reverse Breakdown
Voltage
IR
V(BR)
VR = 25V
.035
.900
.079
2.000
inches
mm
Capacitance
CJ
trr
10pF
5nS
Measured at
1.0MHz, VR=1.0V
IF=IR=10mA;
I(REC) = 1mA
Reverse Recovery
Time
.037
.950
Thermal Resistance,
Junction to Ambient
RqJA
500K/W
.037
.950
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BAT54 thru BAT54S
M C C
Fig.1 :
average forward current.
Average forward power dissipation versus
Fig.2 :
Average forward current versus ambient
δ
temperature ( = 1).
PF(av)(W)
IF(av)(A)
0.35
0.35
δ = 0.1
δ = 0.2
δ = 0.5
δ = 0.05
0.30
0.25
0.20
0.15
0.30
0.25
0.20
0.15
0.10
0.05
0.00
δ = 1
0.10
T
T
0.05
Tamb(°C)
tp
=tp/T
δ
IF(av) (A)
0.15 0.20
tp
=tp/T
δ
0.00
0
25
50
75
100
125
150
0.00
0.05
0.10
0.25
0.30
Fig.3 :
Fig.4 :
Relative variation of thermal impedance
junction to ambient versus pulse duration (alumine
substrate 10mm x 8mm x 0.5mm).
Non repetitive surge peak forward current
versus overload duration (maximum values).
IM(A)
Zth(j-a)/Rth(j-a)
1.0
1.00
0.9
0.8
0.7
δ = 0.5
δ = 0.2
Ta=25°C
0.6
0.5
0.4
0.3
0.2
0.1
0.0
δ = 0.1
0.10
Ta=50°C
Ta=100°C
T
I
M
Single pulse
t
tp(s)
tp
δ
=0.5
t(s)
=tp/T
δ
0.01
1E-3
1E-3
1E-2
1E-1
1E+0
1E-2
1E-1
1E+0
1E+1
1E+2
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BAT54 thru BAT54S
M C C
Fig.5 :
Fig.6 :
Reverse leakage current versus junction
temperature.
Reverse leakage current versus reverse
voltage applied (typical values).
IR(µA)
1E+4
IR(µA)
1E+2
VR=30V
1E+3
1E+2
1E+1
1E+0
1E-1
1E-2
Tj=100°C
1E+1
Tj=50°C
1E+0
Tj=25°C
1E-1
Tj(°C)
VR(V)
1E-2
0
25
50
75
100
125
150
0
5
10
15
20
25
30
Fig.7 :
Fig.8 :
current (typical values).
Junction capacitance versus reverse
Forward voltage drop versus forward
voltage applied (typical values).
C(pF)
IFM(A)
10
5E-1
F=1MHz
Tj=25°C
1E-1
Tj=100°C
5
2
1E-2
Tj=50°C
Tj=25°C
1E-3
VFM(V)
VR(V)
1E-4
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
1
1
2
5
10
20
30
Pin Configuration - Top View
3
1
2
Figure 1
Figure 2
Figure 3
Figure 4
BAT54
BAT54A
BAT54C
BAT54S
www.mccsemi.com
相关型号：
BAT54TCDW-TP
Rectifier Diode, Schottky, 4 Element, 0.2A, Silicon, ULTRA SMALL, PLASTIC PACKAGE-6
MCC
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