BC847BT [MCC]
NPN Surface Mount Small Signal Transistor 150mW; NPN表面贴装小信号晶体管150毫瓦型号: | BC847BT |
厂家: | Micro Commercial Components |
描述: | NPN Surface Mount Small Signal Transistor 150mW |
文件: | 总3页 (文件大小:80K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
BC847AT, BT, CT
Micro Commercial Components
NPN
Features
xꢀ Epitaxial Die Construction
Surface Mount Small
Signal Transistor
150mW
xꢀ Complementary PNP Type Available (BC857AT,BT,CT)
xꢀ Ultra-Small Surface Mount Package
x
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0 and MSL Rating 1
Maximum Data
xꢀ Case: SOT-523
SOT-523
xꢀ Terminals: Solderable per MIL-STD-202, Method 208
xꢀ Polarity: See Diagram
A
D
C
x
Marking:BC847AT--1E,BC847BT--1F,BC847CT-1G.
C
B
Maximum Ratings @@ 25к Unless Otherwise Specified
Symbol
Parameter
Value
Units
E
B
OFF CHARACTERISTICS
E
V(BR)CEO
V(BR)CBO
V(BR)EBO
IC
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector Current
45
50
Vdc
Vdc
Vdc
mAdc
mW
к/W
к
H
G
J
6.0
K
100
DIMENSIONS
INCHES
Pd
Power Dissipation (Note 1)
150
MM
DIM
A
B
MIN
.059
.030
.057
MAX
.067
.033
.069
MIN
1.50
0.75
1.45
MAX
1.70
0.85
1.75
NOTE
Thermal Resistance, Junction to
Ambient(Note 1)
RșJA
833
TJ, TSTG
Operating & Storage Temperature
-55~+150
C
D
E
G
H
J
.020 Nominal
0.50Nominal
0.90
.035
.043
.004
.031
.008
.014
1.10
Note: 1. Device mounted on FR-4 PCB with recommended pad
layout
.000
.028
.004
.010
.000
.70
.100
0.80
.200
.35
.100
.25
K
www.mccsemi.com
Revision: 4
2008/01/01
1 of 3
M C C
BC847AT, BT, CT
TM
Micro Commercial Components
Electrical Characteristics @ 25к Unless Otherwise Specified
Symbol
Parameter
Min
Typ
Max
Units
Test Condition
OFF CHARACTERISTICS
DC Current Gain
(Note 2)
Current Gain A
110
200
420
---
290
520
222
450
800
250
600
hFE
---
VCE=5.0V, IC=2.0mA
B
C
Collector-Emitter Saturation Voltage
(Note 2)
IC=10mA, IB=0.5mA
IC=100mA, IB=5.0mA
VCE(SAT)
VBE(SAT)
VBE(ON)
---
---
---
mV
mV
mV
Base-Emitter Saturation Voltage
(Note 2)
700
900
660
---
---
IC=10mA, IB=0.5mA
580
---
700
770
VCE=5.0V, IC=2.0mA
VCE=5.0V, IC=10mA
VCB=30V, IE=0
Base-Emitter Voltage (Note 2)
ICBO
ICBO
---
---
---
---
15
5.0
nA
µA
Collector-Cutoff Current (Note 2)
VCB=30V, Tj=125к
V
CE=5.0V, IC=10mA,
f=100MHz
fT
Gain Bandwidth Product
100
---
---
---
---
---
MHz
pF
CCBO
NF
Collector-Base Capacitance
4.5
VCB=10V, f=1.0MHz
VCE=5V,RS=2.0Kohm,
f=1.0MHz,BW=200HZ
Noise Figure
BC847BT
BC847CT
10
4.0
---
dB
Note: 2. Short duration pulse test used to minimize self-heating effect.
www.mccsemi.com
Revision: 4
2 of 3
2008/01/01
M C C
TM
Micro Commercial Components
Ordering Information
Device
Packing
(Part Number)-TP
Tape&Reel;3Kpcs/Reel
***IMPORTANT NOTICE***
Micro Commercial Components Corp . reserves the right to make changes without further notice to any
product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
the rights of others . The user of products in such applications shall assume all risks of such use
and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
3 of 3
Revision: 4
2008/01/01
相关型号:
BC847BT-13
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, ULTRA SMALL, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明