ER3M-TP [MCC]
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN;
| 型号： | ER3M-TP |
| 厂家： | 
Micro Commercial Components |
| 描述： | Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AB, ROHS COMPLIANT, PLASTIC, SMC, 2 PIN |
| 文件： | 总3页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ER3AB
M C C
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21201 Itasca Street Chatsworth
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ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
THRU
ER3JB
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
3 Amp Super Fast
Recovery
Silicon Rectifier
50 to600 Volts
Features
·
·
·
·
·
For Surface Mount Applications
Extremely Low Thermal Resistance
Easy Pick And Place
High Temp Soldering: 250°C for 10 Seconds At Terminals\
Super Fast Recovery Times For High Effieciency
DO-214AA
(SMBJ) (LEAD FRAME)
Maximum Ratings
·
·
·
Operating Temperature: -50°C to +150°C
Storage Temperature: -50°C to +150°C
Maximum Thermal Resistance; 16°C/W Junction To Lead
A
MCC
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak Reverse
Voltage
50V
Maximum Maximum
RMS
Voltage
DC
Blocking
Voltage
50V
B
C
ER3AB
ER3AB
ER3BB
ER3CB
ER3DB
ER3GB
ER3JB
35V
70V
ER3BB
ER3CB
ER3DB
ER3GB
ER3JB
100V
150V
200V
400V
100V
F
H
105V
140V
280V
420V
150V
200V
400V
600V
D
G
600V
E
DIMENSIONS
Electrical Characteristics @ 25°C Unless Otherwise Specified
INCHES
MIN
MM
MIN
DIM
A
B
C
D
E
F
G
H
MAX
.185
.155
.012
.060
.220
.103
.087
.008
MAX
4.70
3.94
0.31
1..52
5.59
2.62
2.21
0.203
NOTE
Average Forward
Current
IF(AV)
3.0A
TL = 75°C
.160
.130
.006
.030
.200
.079
.075
.002
4.06
3.30
0.15
0.76
5.08
2.01
1.91
0.05
Peak Forward Surge
Current
IFSM
100A
8.3ms, half sine
Maximum
Instantaneous
Forward Voltage
ER3AB-3DB
ER3GB
SUGGESTED SOLDER
PAD LAYOUT
VF
.95V
1.25V
1.70V
IFM = 3.0A;
TJ = 25°C
0.106
ER3JB
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
0.083”
IR
5mA
TJ = 25°C
200mA TJ = 100°C
Maximum Reverse
Recovery Time
Typical Junction
Capacitance
Trr
CJ
35ns
45pF
IF=0.5A, IR=1.0A,
Irr=0.25A
Measured at
1.0MHz, VR=4.0V
0.050”
*Pulse test: Pulse width 300 msec, Duty cycle 2%
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ER3AB thru ER3JB
M C C
Figure 1
Typical Forward Characteristics
100
Figure 2
Forward Derating Curve
60
40
3.0
2.5
2.0
ER3AB-3DB
20
ER3EB-3GB
ER3JB
10
6
1.5
1.0
.5
4
2
Amps
25°C
1
.6
.4
Amps
Single Phase, Half Wave
60Hz Resistive or Inductive Load
0
60
100
120
140
160
80
40
.2
°C
Average Forward Rectified Current - Amperesversus
Lead Temperature -°C
.1
.06
.04
.02
.01
.4
.6
.8
1.0
1.6
1.2
1.4
Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
TJ=25°C
pF
10
6
4
2
1
.1
.2
.4
1
2
10 20
200 400
1000
4
40
100
Volts
Junction Capacitance - pFversus
Reverse Voltage - Volts
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ER3AB thru ER3JB
M C C
Figure 4
Typical Reverse Characteristics
1000
600
Figure 5
Peak Forward Surge Current
400
150
200
125
TJ=100°C
100
60
100
75
40
20
Amps
50
25
0
10
6
mAmps
80
100
1
6
60
4
10 20
40
8
2
Cycles
4
TJ=75°C
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
2
1
.6
.4
TJ=25°C
.2
.1
20
40
60
80
Volts
140
100
120
Instantaneous Reverse Leakage Current - MicroAmperesversus
Percent Of Rated Peak Reverse Voltage - Volts
Figure 6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50W
10W
trr
+0.5A
0
Pulse
Generator
Note 2
-0.25
25Vdc
Oscilloscope
Note 1
1W
-1.0
1cm
Notes:
1. Rise Time = 7ns max.
Set Time Base for 20/100ns/cm
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
www.mccsemi.com
相关型号：
ER3MB-TP-HF
Rectifier Diode, 1 Phase, 1 Element, 3A, 1000V V(RRM), Silicon, DO-214AA, SMB, 2 PIN
MCC
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