FRAF801G-BP [MCC]

Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN;


型号：	FRAF801G-BP
厂家：	Micro Commercial Components
描述：	Rectifier Diode, 1 Phase, 1 Element, 8A, 50V V(RRM), Silicon, TO-220AC, ITO-220AC, 2 PIN 局域网二极管
文件：	总2页 (文件大小：135K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

FRAF801G

THRU

FRAF807G

M C C

ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents

20736 Marilla Street Chatsworth

ꢆꢋꢅꢌꢍꢎꢍꢍ

ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ

$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ

Micro Commercial Components

ꢀ

Isolation 8 Amp Glass

Passivated Fast

)HDWXUHV

•

High Reliability

Low Forward Voltage Drop

High Current Capability

High Surge Current Capability

Recovery Rectifier

50 to 1000 Voltsꢀ

0D[LPXPꢀ5DWLQJVꢀ

•

Operating Temperature: -55°C to +150°C

ITO-220AC

Storage Temperature: -55°C to +150°C

Typical Thermal Resistance: 5.0 ^oC/W junction to case

Maximum

Recurrent

Maximum DC

Blocking

MCC

Maximum

Part Number Peak Reverse RMS Voltage

Voltage

FRAF801G

FRAF802G

FRAF803G

FRAF804G

FRAF805G

FRAF806G

FRAF807G

50V

100V

200V

400V

600V

800V

1000V

35V

70V

50V

100V

200V

400V

600V

800V

1000V

140V

280V

420V

560V

700V

Average Forward

Current

Peak Forward Surge

Current

PIN 1

PIN 2

I_F(AV)

I_FSM

V_F

8 A

T_A= 55°C

150A

8.3ms, half sine

I_FM= 8.0A

Maximum

Instantaneous

Forward Voltage

Maximum DC

Reverse Current At

Rated DC Blocking

Voltage

1.3V

ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ

ꢀ ꢀ ꢀ ꢀ

INCHES

MIN

DIM

MAX

MIN

14.80

---

2.55

6.30

---

MAX

5.0µA T_A= 25°C

100µA T_A= 125°C

.583

---

.100

.248

---

.606

.406

.112

.272

.161

15.40

10.30

2.85

I_R

6.90

4.10

13.80

Maximum Reverse

Recovery Time

FRAF801G-804G

FRAF805G

FRAF806G-807G

Typical Junction

Capacitance

.512

.543

13.00

.200

5.10

---

.118

---

.098

.035

.032

.134

.189

.123

.114

---

3.00

---

2.50

0.90

0.80

3.40

4.80

3.10

2.90

T_rr

C_J

150ns I_F=0.5A,

250ns I_R=1.0A,

500ns I_rr=0.25A

Measured at

60pF

1.0MHz, V_R=4.0V

www.mccsemi.com

Revision: 3

2002/03/24

FRAF801G thru FRAF807G

M C C

Micro Commercial Components

FIG.1- REVERSE RECOVERY TIME CHARACTERISTIC AND TEST CIRCUIT DIAGRAM

50W

NONINDUCTIVE

10W

NONINDUCTIVE

trr

+0.5A

(-)

DUT

(+)

PULSE

GENERATOR

(NOTE 2)

50Vdc

(approx)

(-)

-0.25A

OSCILLOSCOPE

(NOTE 1)

(+)

NON

INDUCTIVE

-1.0A

NOTES: 1. Rise Time=7ns max. Input Impedance=

1 megohm 22pf

1cm

SET TIME BASE FOR

5/ 10ns/ cm

2. Rise Time=10ns max. Sourse Impedance=

50 ohms

FIG.2- MAXIMUM FORWARD CURRENT DERATING

CURVE

FIG.5- TYPICAL INSTANTANEOUS

FORWARD CHARACTERISTICS

400

200

100

Tj=25^oC

Pulse Width=300

1% Duty Cycle

100

150

LEAD TEMPERATURE. (^oC)

FIG.3- MAXIMUM NON-REPETITIVE FORWARD

SURGE CURRENT

0.4

0.2

150

125

TC=125⁰C

0.1

1.0

1.2

1.4

1.6

1.8

2.0

100

INSTANTANEOUS FORWARD VOLTAGE. (V)

8.3ms Single Half Sine Wave

JEDEC Method

FIG.6- TYPICAL REVERSE CHARACTERISTICS

100

Tj=125⁰C

NUMBER OF CYCLES AT 60Hz

FIG.4- TYPICAL JUNCTION CAPACITANCE

120

100

Tj=75⁰C

1.0

Tj=25⁰C

f=1.0MHz

Vsig=50mVp-p

Tj=25⁰C

100

120

140

0.1

0.5 1.0

100

500 1000

PERCENT OF RATED PEAK REVERSE VOLTAGE. (%)

REVERSE VOLTAGE. (V)

www.mccsemi.com

Revision: 3

2002/03/24

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