KSD1616A-Y-B [MCC]
Transistor;
| 型号： | KSD1616A-Y-B |
| 厂家： | 
Micro Commercial Components |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KSD1616
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
TM
KSD1616-Y/G/L
KSD1616A
Micro Commercial Components
KSD1616A-Y/G
Features
•
Audio frequency power amplifier & medium speed switching
NPN Silicon
Epitaxial Transistors
•
Marking:D1616 X
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
x
Maximum Ratings
Symbol
Rating
Rating
Unit
VCEO
Collector-Emitter Voltage
KSD1616
KSD1616A
50
60
V
TO-92
VCBO
Collector-Base Voltage
A
E
KSD1616
KSD1616A
60
120
V
VEBO
IC
ICP
PC
TJ
Emitter-Base Voltage
6.0
1.0
2.0
0.75
V
A
A
W
OC
OC
Collector Current (DC)
Collector Current (Pulse)(1)
Collector power dissipation
Junction Temperature
Storage Temperature
B
-55 to +150
-55 to +150
1
2
3
TSTG
Electrical Characteristics @ 25OC Unless Otherwise Specified
Symbol
Parameter
Min
Typ Max
Units
OFF CHARACTERISTICS
C
ICBO
Collector Cutoff Current
---
---
---
---
100
100
nAdc
nAdc
(VCB=60Vdc,I =0)
E
IEBO
Emitter-Base Cutoff Current
(VEB=6.0Vdc, I =0)
C
ON CHARACTERISTICS
hFE-1
DC Current Gain
(I =100mAdc, VCE=2.0Vdc)
C
D
KSD1616
KSD1616A 135
135
---
---
600
400
---
hFE-2
VCE(sat)
VBE(sat)
VBE(ON)
fT
DC Current Gain
(VCE=2.0Vdc, I =1.0Adc)
81
---
---
0.3
---
Vdc
C
Collector-Emitter Saturation Voltage(2)
--- 0.15
--- 0.9
600
100
---
PIN 1.
PIN 2.
PIN 3.
EMITTER
COLLECTOR
BASE
(I =1.0Adc, IB=50mAdc)
C
Base-Emitter Saturation Voltage(2)
1.2
Vdc
mVdc
MHz
pF
G
(I =1.5Adc, IB=75mAdc)
C
Base-Emitter On Voltage(2)
640 700
(VCE=2.0Vdc, I =50mAdc)
Current Gain Bandwidth Product
C
160
19
---
---
(I =100mAdc, VCE=2.0Vdc)
C
DIMENSIONS
Cob
Collector Output Capacitance
INCHES
MAX
.185
MM
(VCE=10Vdc, I =0, f=1.0MHz)
E
DIM
A
B
C
D
MIN
.175
.175
.500
.016
.135
.095
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
TON
tSTG
TF
Turn On Time
Storage Time
Fall Time
V
CC=10V,
--- 0.07
--- 0.95
--- 0.07
---
---
---
us
us
us
IC=100mA,
IB1=IB2=10mA,
.185
---
.020
.145
.105
VBE(off)=-2~-3V
E
G
h
FE ( 1) Classification
Classification
Y
G
L
hFE-1
135-270
200-400
300-600
(1) PW<10ms, Duty Cycle<50%
(2) (2) Pulse Test: PW<350us, Duty Cycle<2% Pulsed
www.mccsemi.com
1 of 2
Revision: 3
2007/03/02
M C C
TM
Micro Commercial Components
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product herein to make corrections, modifications , enhancements , improvements , or other changes .
Micro Commercial Components Corp . does not assume any liability arising out of the application or
use of any product described herein; neither does it convey any license under its patent rights ,nor
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and will agree to hold Micro Commercial Components Corp . and all the companies whose
products are represented on our website, harmless against all damages.
***APPLICATIONS DISCLAIMER***
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,
Aerospace or Military Applications.
www.mccsemi.com
2 of 2
Revision: 3
2007/03/02
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