MBR740 [MCC]
7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts; 7.5安培肖特基势垒整流器20到60伏
| 型号： | MBR740 |
| 厂家： | 
Micro Commercial Components |
| 描述： | 7.5 Amp Schottky Barrier Rectifier 20 to 60 Volts |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
M C C
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21201 Itasca Street Chatsworth
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MBR720
THRU
MBR760
Features
·
·
·
·
Metal of siliconrectifier, majonty carrier conducton
Guard ring for transient protection
Low power loss high efficiency
7.5 Amp
Schottky Barrier
Rectifier
High surge capacity, High current capability
20 to 60 Volts
Maximum Ratings
·
·
Operating Temperature: -55°C to +150°C
Storage Temperature: -55°C to +175°C
TO-220AC
Microsemi
Catalog
Number
Device
Marking
Maximum
Recurrent
Peak
Reverse
Voltage
20V
Maximum Maximum
B
L
M
RMS
DC
C
Voltage
Blocking
Voltage
D
A
K
E
F
MBR720
MBR730
MBR735
MBR740
MBR745
MBR760
MBR720
MBR730
MBR735
MBR740
MBR745
MBR760
14V
21V
24.5V
28V
31.5V
42V
20V
30V
35V
40V
45V
60V
PIN
1
2
30V
35V
40V
45V
G
I
60V
J
H
N
Electrical Characteristics @ 25°C Unless Otherwise Specified
Average Forward
Current
IF(AV)
7.5A
TC = 125°C
PIN 1
PIN 2
CASE
Peak Forward Surge
Current
IFSM
150A
8.3ms, half sine
Maximum Forward
Voltage Drop Per
Element
ꢀꢁꢂꢃꢄꢅꢁꢆꢄꢅ
VF
ꢀ ꢀ ꢀ ꢀ
INCHES
ꢃꢂꢄ
MM
ꢁꢂꢃ
A
B
C
D
E
F
G
H
I
ꢃꢅꢆ
ꢃꢂꢄ
14.22
9.65
ꢃꢅꢆ
15.88
10.67
3.43
6.86
10.67
6.35
14.73
5.33
1.14
0.64
ꢄꢇꢈꢉ
.84V
.75V
IFM = 15 A mper
IFM = 7.5 A mper
TA = 25°C*
MBR720-745
.560
.380
.100
.230
.380
------
.500
.190
.020
.012
.139
.140
.045
.080
.625
.420
.135
MBR760
2.54
.270
.420
5.84
9.65
Maximum DC
Reverse Current At
Rated DC Blocking
.250
.580
------
12.70
.210
4.83
.045
.025
0.51
0.30
J
K
L
M
Voltage
IR
0.1mA TJ = 25°C
0.5mA
15mA
50mA
.161
3.53
4.09
4.83
1.40
MBR720-745
.190
.055
3.56
1.14
MBR760
MBR720-745
MBR760
TJ = 125°C
N
.115
2.03
2.92
Typical Junction
Capacitance
CJ
400pF Measured at
1.0MHz, VR=4.0V
*Pulse test: Pulse width 300 msec, Duty cycle 2%
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M C C
MBR720 thru MBR760
Figure 1
Figure 2
Typical Reverse Characteristics
Typical Forward Characteristics
10
6
100
60
4
40
2
1
20
10
6
.6
.4
4
2
.2
.1
TJ=25°C
25°C
mAmps
1
.6
.4
Amps
.06
.04
.02
.01
.2
.1
.06
.04
.006
.004
.002
.001
.02
.01
20
60
80
40
140
100
120
.2
.3
.4
.5
1.0
.6
.8
Volts
Volts
Instantaneous Reverse Leakage Current - MicroAmperesversus
Percent Of Rated Peak Reverse Voltage - Volts
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Forward Derating Curve
12
10
8
Figure 4
Peak Forward Surge Current
150
125
100
75
6
4
Amps
Amps
50
25
2
0
Single Phase, Half Wave
80
100
1
60
4
6
10 20
40
8
2
60Hz Resistive or Inductive Load
Cycles
0
0
75
°C
25
100
150
50
175
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
Average Forward Rectified Current - Amperesversus
Ambient Temperature -°C
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肖特基势垒二极管Schottky Barrier Diodes，高结温低漏电流肖特基势垒二极管High Tjm Low IRRM Schottky Barrier Diodes，Tj = -65°C ~ 175°C, Tjm = 175°C。
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