MPSA42-BP [MCC]

NPN Silicon High Voltage Transistor 625mW; NPN硅高压晶体管625mW
MPSA42-BP
型号: MPSA42-BP
厂家: Micro Commercial Components    Micro Commercial Components
描述:

NPN Silicon High Voltage Transistor 625mW
NPN硅高压晶体管625mW

晶体 小信号双极晶体管 高压
文件: 总4页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MPSA42  
THRU  
MPSA43  
M C C  
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents  
20736 Marilla Street Chatsworth  
ꢆꢋꢅꢌꢍꢎꢍꢍ  
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ  
$ꢉ%ꢒꢅ   ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ  
TM  
Micro Commercial Components  
Features  
NPN Silicon High  
Voltage Transistor  
625mW  
Through Hole Package  
150oC Junction Temperature  
x
Case Material: Molded Plastic. UL Flammability  
Classification Rating 94V-0 and MSL Rating 1  
Lead Free Finish/RoHS Compliant ("P" Suffix designates  
RoHS Compliant. See ordering information)  
TO-92  
A
E
Mechanical Data  
Case: TO-92, Molded Plastic  
Marking:  
B
C
MPSA42 ----A42  
MPSA43 ----MPSA43  
Maximum Ratings @ 25oC Unless Otherwise Specified  
Charateristic  
Collector-Emitter Voltage MPSA42  
MPSA43  
Collector-Base Voltage MPSA42  
MPSA43  
Symbol Value Unit  
300  
200  
300  
200  
VCEO  
V
V
V
VCBO  
Emitter-Base Voltage  
MPSA42  
MPSA43  
VEBO  
IC  
5.0  
D
Collector Current(DC)  
300  
mA  
mW  
625  
5.0  
1.5  
12  
Power Dissipation@TA=25oC  
Power Dissipation@TC=25oC  
Pd  
C
B
E
mW/oC  
W
Pd  
mW/oC  
oC/W  
G
Thermal Resistance, Junction to  
Ambient Air  
Thermal Resistance, Junction to  
Case  
DIMENSIONS  
R
JA  
200  
INCHES  
MIN  
.170  
.170  
.550  
.010  
.130  
.010  
MM  
MIN  
DIM  
A
B
C
D
E
G
MAX  
.190  
.190  
.590  
.020  
.160  
.104  
MAX  
4.83  
4.83  
14.97  
0.56  
3.96  
2.64  
NOTE  
4.33  
4.30  
13.97  
0.36  
3.30  
2.44  
oC/W  
R
83.3  
JC  
Operating & Storage Temperature Tj, TSTG -55~150 oC  
www.mccsemi.com  
1 of 4  
Revision: 7  
2008/02/01  
M C C  
MPSA42 thru MPSA43  
TM  
Micro Commercial Components  
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)  
A
Characteristic  
Symbol  
Min  
Max  
Unit  
OFF CHARACTERISTICS  
(1)  
CollectorEmitter Breakdown Voltage  
V
Vdc  
(BR)CEO  
(I = 1.0 mAdc, I = 0)  
MPSA42  
MPSA43  
300  
200  
C
B
CollectorBase Breakdown Voltage  
(I = 100 Adc, I = 0)  
V
Vdc  
(BR)CBO  
MPSA42  
MPSA43  
300  
200  
C
E
EmitterBase Breakdown Voltage  
(I = 10 Adc, I = 0)  
V
5.0  
Vdc  
(BR)EBO  
E
C
Collector Cutoff Current  
I
µAdc  
CBO  
(V  
CB  
(V  
CB  
= 200 Vdc, I = 0)  
MPSA42  
MPSA43  
0.25  
0.1  
E
= 160 Vdc, I = 0)  
E
Emitter Cutoff Current  
I
µAdc  
EBO  
(V  
EB  
(V  
EB  
= 3.0 Vdc, I = 0)  
MPSA42  
MPSA43  
0.25  
0.1  
C
= 4.0 Vdc, I = 0)  
C
(1)  
ON CHARACTERISTICS  
DC Current Gain  
h
FE  
(I = 1.0 mAdc, V  
= 10 Vdc)  
= 10 Vdc)  
= 10 Vdc)  
25  
80  
25  
C
CE  
CE  
CE  
(I = 10 mAdc, V  
250  
C
(I = 50 mAdc, V  
C
CollectorEmitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
V
V
Vdc  
CE(sat)  
MPSA42  
MPSA43  
0.5  
0.4  
C
B
Base–Emitter Saturation Voltage  
(I = 20 mAdc, I = 2.0 mAdc)  
0.9  
Vdc  
BE(sat)  
C
B
SMALLSIGNAL CHARACTERISTICS  
CurrentGain — Bandwidth Product  
f
50  
MHz  
pF  
T
(I = 10 mAdc, V  
= 5 Vdc, f = 30MHz)  
C
CE  
Collector–Base Capacitance  
(V = 20 Vdc, I = 0, f = 1.0 MHz)  
C
cb  
MPSA42  
MPSA43  
3.0  
4.0  
CB  
E
1. Pulse Test: Pulse Width  
300 s, Duty Cycle  
2.0%.  
w w w.m c c s e m i.c o m  
2 of 4  
Revision: 7  
2008/02/01  
M C C  
MPSA42 thru MPSA43  
TM  
Micro Commercial Components  
120  
V
= 10 Vdc  
CE  
T
= +125°C  
J
100  
80  
25°C  
60  
40  
–55°C  
20  
0
0.1  
1.0  
10  
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 1. DC Current Gain  
100  
10  
80  
70  
60  
50  
40  
30  
C
@ 1MHz  
eb  
1.0  
0.1  
C
@ 1MHz  
cb  
T
= 25  
= 20 V  
°
C
J
V
CE  
f = 20 MHz  
20  
10  
0.1  
1.0  
V
10  
100  
1000  
1.0  
2.0 3.0  
5.0 7.0 10  
20  
30  
50 70 100  
, REVERSE VOLTAGE (VOLTS)  
I
, COLLECTOR CURRENT (mA)  
R
C
Figure 2. Capacitance  
Figure 3. Current–Gain – Bandwidth  
1.4  
1.2  
1.0  
V
@ 25  
@ 125  
°
C, I /I = 10  
CE(sat)  
CE(sat)  
CE(sat)  
BE(sat)  
C B  
V
V
V
°C, I /I = 10  
C B  
@ –55  
°
C, I /I = 10  
C B  
@ 25  
°
C, I /I = 10  
C B  
C, I /I = 10  
C B  
0.8  
0.6  
0.4  
0.2  
0.0  
V
V
@ 125  
@ –55  
°
°
BE(sat)  
BE(sat)  
C, I /I = 10  
C B  
V
V
V
@ 25  
°
C, V  
= 10 V  
BE(on)  
BE(on)  
BE(on)  
CE  
C, V  
@ 125  
°
°
= 10 V  
= 10 V  
CE  
@ –55  
C, V  
CE  
0.1  
1.0  
10  
100  
I
, COLLECTOR CURRENT (mA)  
C
Figure 4. ”ON” Voltages  
w w w.m c c s e m i.c o m  
3 of 4  
Revision: 7  
2008/02/01  
M C C  
TM  
Micro Commercial Components  
Ordering Information  
Device  
Packing  
(Part Number)-AP  
(Part Number)-BP  
Tape&Reel;2Kpcs/Box  
Bulk;1Kpcs/Bag  
***IMPORTANT NOTICE***  
Micro Commercial Components Corp . reserves the right to make changes without further notice to any  
product herein to make corrections, modifications , enhancements , improvements , or other changes .  
Micro Commercial Components Corp . does not assume any liability arising out of the application or  
use of any product described herein; neither does it convey any license under its patent rights ,nor  
the rights of others . The user of products in such applications shall assume all risks of such use  
and will agree to hold Micro Commercial Components Corp . and all the companies whose  
products are represented on our website, harmless against all damages.  
***APPLICATIONS DISCLAIMER***  
Products offer by Micro Commercial Components Corp . are not intended for use in Medical,  
Aerospace or Military Applications.  
w w w.m c c s e m i.c o m  
4 of 4  
Revision: 7  
2008/02/01  

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