MPSA43 [MCC]

NPN Silicon High Voltage Transistor 625mW; NPN硅高压晶体管625mW


型号：	MPSA43
厂家：	Micro Commercial Components
描述：	NPN Silicon High Voltage Transistor 625mW NPN硅高压晶体管625mW 晶体晶体管开关高压
文件：	总3页 (文件大小：656K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

M C C

MPSA42

THRU

MPSA43

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21201 Itasca Street Chatsworth

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Features

l Through Hole Package

l 150^oC Junction Temperature

NPN Silicon High

Voltage Transistor

625mW

Pin Configuration

Bottom View

TO-92

Mechanical Data

l Case: TO-92, Molded Plastic

l Marking:

MPSA42 --------- A42

MPSA43 --------- A43

Maximum Ratings @ 25^oC Unless Otherwise Specified

Charateristic

Collector-Emitter Voltage MPSA42

MPSA43

Collector-Base Voltage MPSA42

MPSA43

Symbol Value Unit

300

200

300

200

V_CEO

V_CBO

Emitter-Base Voltage

MPSA42

V_EBO

I_C

5.0

MPSA43

Collector Current(DC)

300

625

5.0

1.5

Power Dissipation@T_A=25^oC

Power Dissipation@T_C=25^oC

P_d

mW/^oC

P_d

mW/^oC

Thermal Resistance, Junction to

Ambient Air

DIMENSIONS

^oC/W

200

INCHES

MIN

.175

.500

.016

.135

.095

MIN

DIM

MAX

4.70

---

0.63

3.68

2.67

NOTE

Thermal Resistance, Junction to

Case

Operating & Storage Temperature T_j, T_STG-55~150 ^oC

.185

---

.020

.145

.105

4.45

4.46

12.7

0.41

3.43

2.42

^oC/W

83.3

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M C C

MPSA42 thru MPSA43

ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

(1)

Collector–Emitter Breakdown Voltage

Vdc

(BR)CEO

(I = 1.0 mAdc, I = 0)

MPSA42

MPSA43

300

200

—

Collector–Base Breakdown Voltage

(I = 100 Adc, I = 0)

Vdc

(BR)CBO

MPSA42

MPSA43

300

200

—

Emitter–Base Breakdown Voltage

(I = 10 Adc, I = 0)

5.0

—

Vdc

(BR)EBO

Collector Cutoff Current

µAdc

CBO

= 200 Vdc, I = 0)

MPSA42

MPSA43

—

0.25

0.1

= 160 Vdc, I = 0)

Emitter Cutoff Current

µAdc

EBO

= 3.0 Vdc, I = 0)

MPSA42

MPSA43

—

0.25

0.1

= 4.0 Vdc, I = 0)

(1)

ON CHARACTERISTICS

DC Current Gain

(I = 1.0 mAdc, V

= 10 Vdc)

—

(I = 10 mAdc, V

250

(I = 50 mAdc, V

—

Collector–Emitter Saturation Voltage

(I = 20 mAdc, I = 2.0 mAdc)

Vdc

CE(sat)

MPSA42

MPSA43

—

0.5

0.4

Base–Emitter Saturation Voltage

(I = 20 mAdc, I = 2.0 mAdc)

—

0.9

Vdc

BE(sat)

SMALL–SIGNAL CHARACTERISTICS

Current–Gain — Bandwidth Product

—

MHz

(I = 10 mAdc, V

= 5 Vdc, f = 30MHz)

Collector–Base Capacitance

(V = 20 Vdc, I = 0, f = 1.0 MHz)

MPSA42

MPSA43

—

3.0

4.0

1. Pulse Test: Pulse Width

300 s, Duty Cycle

2.0%.

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M C C

MPSA42 thru MPSA43

120

= 10 Vdc

= +125°C

100

25°C

–55°C

0.1

1.0

100

, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

100

@ 1MHz

1.0

0.1

@ 1MHz

= 25

= 20 V

f = 20 MHz

0.1

1.0

100

1000

1.0

2.0 3.0

5.0 7.0 10

50 70 100

, REVERSE VOLTAGE (VOLTS)

, COLLECTOR CURRENT (mA)

Figure 2. Capacitance

Figure 3. Current–Gain – Bandwidth

1.4

1.2

1.0

@ 25

@ 125

@ –55

C, I /I = 10

CE(sat)

BE(sat)

C B

°C, I /I = 10

C B

C, I /I = 10

C B

@ 25

C, I /I = 10

C B

C, I /I = 10

C B

0.8

0.6

0.4

0.2

0.0

@ 125

@ –55

BE(sat)

C, I /I = 10

C B

@ 25

C, V

= 10 V

BE(on)

C, V

@ 125

@ –55

= 10 V

C, V

0.1

1.0

100

, COLLECTOR CURRENT (mA)

Figure 4. ”ON” Voltages

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