MPSA92_11 [MCC]
PNP Silicon High Voltage Transistor; PNP硅高压晶体管
| 型号： | MPSA92_11 |
| 厂家： | 
Micro Commercial Components |
| 描述： | PNP Silicon High Voltage Transistor |
| 文件： | 总3页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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TM
MPSA92
Micro Commercial Components
Features
•
•
•
·
Through Hole Package
Operating & Storage Temperature: -55°C to +150°C
Marking : A92
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
PNP Silicon High
Voltage Transistor
·
·
TO-92
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min
Max
Units
A
E
OFF CHARACTERISTICS
V(BR)CEO
V(BR)CBO
V(BR)EBO
IEBO
Collector-Emitter Breakdown Voltage*
(IC=-1.0mAdc, IB=0)
Collector-Base Breakdown Voltage
(IC=-100µAdc, IE=0)
Emitter -Base Breakdown Voltage
(IE=-10µAdc, IC=0)
Emitter Cutoff Current
-300
-300
-5.0
Vdc
Vdc
B
Vdc
-0.25
-0.25
uAdc
uAdc
(VEB=-3.0Vdc, IC=0)
ICBO
Collector Cutoff Current
(VCB=-200Vdc, IE=0)
ON CHARACTERISTICS
C
hFE
DC Current Gain*
(IC=-1.0mAdc, VCE=-10Vdc)
(IC=-10mAdc, VCE=-10Vdc)
(IC=-50mAdc, VCE=-10Vdc)
Collector-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
25
80
25
250
VCE(sat)
VBE(sat)
-0.5
-0.9
Vdc
Vdc
Base-Emitter Saturation Voltage
(IC=-20mAdc, IB=-2.0mAdc)
D
SMALL-SIGNAL CHARACTERISTICS
fT
Current Gain-Bandwidth Product
(IC=-10mAdc, VCE=-5Vdc, f=30MHz)
Collector-Base Capacitance
(VCB=-20Vdc, IE=0, f=1.0MHz)
50
MHz
pF
Ccb
6.0
E
B
*Pulse Width ≤ 300µs, Duty Cycle≤ 2.0%
MAXIMUM RATINGS
C
G
Symbol
Characteristic
Collector–Emitter Voltage
Collector–Base Voltage
Unit
Vdc
MPSA92
DIMENSIONS
V
V
V
I
CEO
CBO
EBO
–300
–300
–5.0
–300
200
83.3
625
5.0
INCHES
MM
Vdc
Vdc
mAdc
°C/W
°C/W
mW
mW/°C
Watts
mW/°C
DIM
A
B
C
D
MIN
.170
.170
.550
.010
.130
.096
MAX
.190
MIN
4.33
4.30
13.97
0.36
3.30
2.44
MAX
4.83
4.83
14.97
0.56
3.96
2.64
NOTE
Emitter–Base Voltage
Collector Current — Continuous
C
.190
.590
.020
.160
.104
R
R
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
JA
JC
E
G
Total Device Dissipation @ T = 25°C
Derate above 25°C
Total Device Dissipation @ T = 25°C
A
P
D
1.5
12
C
P
D
Derate above 25°C
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Revision: A
2011/01/01
MPSA92
M C C
TM
Micro Commercial Components
300
250
V
= 10 Vdc
CE
T
= +125°C
J
200
150
100
50
25°C
–55°C
0
0.1
1.0
10
100
I
, COLLECTOR CURRENT (mA)
C
Figure 1. DC Current Gain
100
10
150
130
C
@ 1MHz
ib
110
90
C
@ 1MHz
cb
70
50
30
1.0
0.1
T
= 25°C
J
V
= 20 Vdc
CE
F = 20 MHz
10
0.1
1.0
10
, REVERSE VOLTAGE (VOLTS)
100
1000
11
I , COLLECTOR CURRENT (mA)
C
13
15
17
19
21
1
3
5
7
9
V
R
Figure 2. Capacitance
Figure 3. Current–Gain — Bandwidth
1.4
1.2
1.0
V
@ 25
°
C, I /I = 10
CE(sat)
CE(sat)
CE(sat)
BE(sat)
C B
V
V
V
@ 125
°C, I /I = 10
C B
@ –55
°
C, I /I = 10
C B
@ 25
°
C, I /I = 10
C B
C, I /I = 10
C B
0.8
0.6
V
@ 125
@ –55
°
°
BE(sat)
BE(sat)
V
C, I /I = 10
C B
V
V
V
@ 25
°
C, V
= 10 V
BE(on)
BE(on)
BE(on)
CE
C, V
0.4
0.2
0.0
@ 125
°
°
= 10 V
= 10 V
CE
@ –55
C, V
CE
0.1
1.0
10
100
I
, COLLECTOR CURRENT (mA)
C
Figure 4. ”ON” Voltages
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Revision: A
2011/01/01
M C C
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-AP
Part Number-BP
Ammo Packing: 2Kpcs/Ammo Box
Bulk: 100Kpcs/Carton
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convey any license under its patent rights ,nor the rights of others . The user of products in such applications shall assume all
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represented on our website, harmless against all damages.
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approval of Micro Commercial Components Corporation.
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Revision: A
2011/01/01
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