TSMBJ0524CP [MCC]
暂无描述;型号: | TSMBJ0524CP |
厂家: | Micro Commercial Components |
描述: | 暂无描述 触发装置 硅浪涌保护器 光电二极管 |
文件: | 总4页 (文件大小:426K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
TSMBJ0506C
THRU
TSMBJ0524C
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
Transient Voltage
Protection Device
75 to 320 Volts
·
·
·
·
·
Oxide-Glass passivated Junction
Bi-Directional protection in a single device
Surge capabilities up to 80A@10/1000us or 250A@8/20us
High Off-State impedance and Low On-State voltage
Plastic material has UL flammability classification 94V-0
DO-214AA
(SMBJ)
Mechanical Data
H
·
·
·
Case : Molded plastic
Cathode Band
Polarity : None cathode band denotes
Approx Weight : 0.093grams
J
Maximum Rating
Characteristic
Non-repetitive peak
impulse current
Symbol
Value
Unit
10/1000us
A
C
I
PP
80A
E
D
Non-repetitive peak
On-state current
Operating temperature
range
Junction and storage
temperature range
8.3ms, one-half
cycle
B
ITSM
30A
F
G
T
OP
-40~150oC
-55~150oC
DIMENSIONS
INCHES
MIN
.078
.077
.002
---
.030
.065
.205
.160
.130
MM
MIN
TJ, T
STG
DIM
A
B
C
D
E
MAX
.096
.083
.008
.02
MAX
2.44
2.10
.20
NOTE
2.00
1.96
.05
---
.51
.060
.091
.220
.180
.155
.76
1.52
2.32
5.59
4.57
3.94
F
1.65
5.21
4.06
3.30
G
H
J
Thermal Resistance
Characteristic
Thermal Resistance
junction to lead
Symbol
Value
20oC/W
Unit
SUGGESTED SOLDER
PAD LAYOUT
R
JL
0.090"
Thermal Resistance
junction to ambient
On recommended
pad layout
100oC/W
R
JA
Typical positive
temperature
coefficient for
0.085”
0.1%/oC
△
△
TJ
VBR
/
breakdown voltage
0.070”
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M C C
TSMBJ0506C thru TSMBJ0524C
℃
ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified
Rated
Repetitive Off-
state Voltage Curr ent@VDRM
Off-state
Leakage
On-State
Breakover
Voltage
Off-State
Capacitance
Parameter
Voltage Breakover Current Holding Current
@I =1.0A
T
Symbol
Units
Limit
VDRM
Volts
Max
75
IDRM
uA
Max
5
5
5
5
5
5
5
VBO
Volts
Max
98
130
180
220
265
300
350
400
VT
Volts
Max
5
5
5
5
5
5
IBO-
mA
Min
50
50
50
50
50
50
50
IBO+
mA
Max
800
800
800
800
800
800
800
800
IH-
IH+
mA
Max
800
800
800
800
800
800
800
800
CJ
pF
Typ.
140
90
90
90
60
60
mA
Min
150
150
150
150
150
150
150
150
TSMBJ0506C
TSMBJ0507C
TSMBJ0510C
TSMBJ0512C
TSMBJ0516C
TSMBJ0518C
TSMBJ0522C
TSMBJ0524C
90
140
160
190
220
275
320
5
5
60
60
5
50
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
Ipp (A)
2/10 us
250
100
50
0
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
8/20 us
250
10/160 us
10/700 us
10/560 us
10/1000 us
150
Half value
ITU-T K20/21
FCC Part 68
100
100
tr
tp
TIME
GR-1089-CORE
80
Symbol
VDRM
IDRM
VBR
IBR
Parameter
I
Stand-off voltage
IPP
Leakage current at stand-off voltage
Breakdown voltage
IBO
IH
Breakdown current
IBR
IDRM
V
Breakover voltage
VBO
IBO
VBR
VDRM
VT
Breakover current
VBO
NOTE: 1
NOTE: 2
Holding current
IH
On state voltage
Peak pulse current
Off-state capacitance
VT
IPP
CO
:
NOTE
1. I > ( V / R ) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
H
L
L
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal
, VR=2Vdc bias.
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M C C
TSMBJ0506C thru TSMBJ0524C
Fig.1 - Off-State Current v.s Junction Temperature
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
100
1.2
V
(T )
BR
J
10
1.15
℃
(T =25 )
BR
V
J
1.1
1.05
1
1
0.1
VDRM = 50V
0.01
0.001
0.95
0.9
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150 175
℃
Tj , JUNCTION TEMPERATURE (
)
℃
Tj ; JUNCTION TEMPERATURE (
)
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
Fig.4 - On-State Current v.s On-State Voltage
100
10
1
1.1
1.05
1
V
(T )
J
BO
℃
(T =25 )
J
V
BO
℃
= 25
T
J
0.95
-50
-25
0
25
50
75
100 125 150 175
1
10
℃
Tj ; JUNCTION TEMPERATURE (
)
V(T) ; ON-STATE VOLTAGE
Fig.6 - Relative Variation of
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
Junction Capacitance v.s Reverse Voltage Bias
1.6
1.4
1.2
1
1
C
(VR)
O
0.8
0.6
0.4
0.2
C
(VR = 1V)
O
℃
Tj =25
f=1MHz
= 1V
I
(T )
J
H
℃
(T =25 )
J
I
V
RMS
H
0.1
-50
-25
0
25
50
75
100
125
1
10
VR ; REVERSE VOLTAGE (V)
100
℃
Tj ; JUNCTION TEMPERATURE (
)
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M C C
TSMBJ0506C thru TSMBJ0524C
TYPICAL APPLICATION CIRCUITS
FUSE
RING
TELECOM
EQUIPMENT
TSPD 1
E.G. MODEM
TIP
PTC
RING
TSPD 1
TSPD 2
TELECOM
EQUIPMENT
E.G. ISDN
PTC
TIP
PTC
RING
TSPD 2
TELECOM
EQUIPMENT
TSPD 1
E.G. LINE CARD
TSPD 3
PTC
TIP
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
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