TSMBJ1005CB [MICROSEMI]
Silicon Surge Protector, 100V V(BO) Max, 60A, DO-214AA, PLASTIC, SMBJ, 2 PIN;
| 型号： | TSMBJ1005CB |
| 厂家： | 
Microsemi |
| 描述： | Silicon Surge Protector, 100V V(BO) Max, 60A, DO-214AA, PLASTIC, SMBJ, 2 PIN 光电二极管 |
| 文件： | 总1页 (文件大小：80K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
8700 E. Thomas Road
Scottsdale, AZ 85252
Tel: (480) 941-6300
Fax: (480) 947-1503
TSMBJ1005C
thru
TSMBJ1024CB
FEATURES
Bi-directional
100 AMP
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Bidirectional Transient Voltage Protection
Surge capabilities up to 100 Amps @ 10/1000 µs or 300 Amps @8/20 µs (note 2,5)
Initial Breakdown Voltage from 60 to 300 volts
Thyristor Surge
Protective Devices
(TSPD)
Positive Resistance Breakover Voltages from 100 to 400 volts
Clamping speeds of Nanoseconds and Oxide-Glass Passivated Junctions
High Off-State Impedance (low leakage) and low on-state voltage (crowbar action)
Encapsulating material meets UL 94VO requirements
UL RECOGNIZED: Qualified to UL 497B File No. E152273
Bellcore 1089 compliant add "B" suffix (TSMBJ1005CB - TSMBJ1024CB)
MECHANICAL
MAXIMUM RATINGS
CHARACTERISTICS
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Operating Temperatures: -400C to +1500C
Storage Temperature: -650C to +1500C
CASE STYLE: SMBJ (DO-214AA)
CASE STYLE: SMBG (DO-
215AA)
Repetitive Off-State Voltage (both directions): See Electrical Characteristics for VDRM
Non-Repetitive Peak Impulse Current (IPP): 100 A @ 10/1000 µs or 300 A @ 8/20 µs
Option: Bellcore 1089 compliant (IPP = 312.5 A @ 8/20 µs)
Non-Repetitive Peak On-State Current (ITSM): @ 8.3 ms (one-half cycle); 60 Amps
SMBJ
SMBG
MECHANICAL
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Lead solder temperature (10 sec duration) 260ºC
Weight: 1.5 grams(approximate)
Marked with logo and marking code
PACKAGING
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Tape & Reel EIA Standard 481-1-A
13 inch reel 2,500, pieces
INCHES
MILLIMETERS
MIN/MAX
MIN/MAX
A
.077/.083
.160/.180
.130/1.55
.205/.220
.075/.095
.235/.255
.015/.030
.030/.060
1.96/2.10
4.06/4.57
3.30/3.94
5.21/5.59
1.91/2.41
5.97/6.48
0.38/0.76
0.76/1.52
B
C
D
E
F
Electrical Characteristics @ 25ºC
Rated
Repetitive
Off-State
Voltage
Breakdown Breakover
On-State
Voltage
Rated Peak
Pulse Current
100 Amps @
10/1000 µs
Off-State
Leakage
Current
@ VDRM
Voltage
Voltage
Capacitance
(1 MHz)
Product
Marking
Holding
Current
@I(BR)=1 mA
@IT = 1 A
G
H
(see note 3)
(see note 3) (see note 1)
(pulsed)
Co
@ 0v
pF
Co
@ 50v
pF
MAX
100
100
100
100
100
100
VDRM
IDRM
µA
V(BR)
V(BO)
VT
IH
IH
Part Number
Marking
VOLTS
VOLTS
VOLTS
VOLTS
mA
mA
LEAD FINISH: Solder Dip or Lead Tin Plate
MAX
50
MAX
MIN
60
MAX
100
110
265
300
350
400
MAX
3.5
3.5
3.5
3.5
3.5
3.5
MIN
150
150
150
150
150
150
MAX
750
750
750
750
750
750
MAX
200
200
200
200
200
200
TSMBJ1005C
TSMBJ1006C
TSMBJ1016C
TSMBJ1018C
TSMBJ1022C
TSMBJ1024C
T1005C
T1006C
T1016C
T1018C
T1022C
T1024C
5
5
5
5
5
5
POLARITY: Bi-directional
60
70
160
180
220
240
190
220
275
300
NOTES:
1. For rise times less than 1 kV/ms. For very fast times up to 1 kV/µs, V(BO) will be 110% of V(BO) Max., The I(BO) is 750 mA.
2. Critical rate of rise of On-State current is 100 A/µs Max.
3. Maximum rate of rise of Off-State voltage VDRM that will not trigger device is 5 kV/µs (TJ = 70ºC).
4. Breakdown voltage V(BR) has a positive temperature coefficient of + 0.1 %/ºC.
MSC0107B.PDF
ISO 9001 CERTIFIED
REV F 7/31/01
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