TSMBJ1024C [MCC]
Transient Voltage Protection Device 75 to 320 Volts; 瞬态电压保护装置75〜 320伏特
| 型号： | TSMBJ1024C |
| 厂家： | 
Micro Commercial Components |
| 描述： | Transient Voltage Protection Device 75 to 320 Volts |
| 文件： | 总4页 (文件大小：426K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TSMBJ1006C
THRU
TSMBJ1024C
M C C
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
21201 Itasca Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
Transient Voltage
Protection Device
75 to 320 Volts
·
·
·
·
·
Oxide-Glass passivated Junction
Bi-Directional protection in a single device
Surge capabilities up to 100A@10/1000us or 400A@8/20us
High Off-State impedance and Low On-State voltage
Plastic material has UL flammability classification 94V-0
DO-214AA
(SMBJ)
Mechanical Data
H
·
·
·
Case : Molded plastic
Cathode Band
Polarity : None cathode band denotes
Approx Weight : 0.093grams
J
Maximum Rating
Characteristic
Non-repetitive peak
impulse current
Symbol
Value
Unit
10/1000us
A
C
I
PP
100A
E
D
Non-repetitive peak
On-state current
Operating temperature
range
Junction and storage
temperature range
8.3ms, one-half
cycle
B
ITSM
50A
F
G
T
OP
-40~150oC
-55~150oC
DIMENSIONS
INCHES
MIN
.078
.077
.002
---
.030
.065
.205
.160
.130
MM
MIN
TJ, T
STG
DIM
A
B
C
D
E
MAX
.096
.083
.008
.02
MAX
2.44
2.10
.20
NOTE
2.00
1.96
.05
---
.51
.060
.091
.220
.180
.155
.76
1.52
2.32
5.59
4.57
3.94
F
1.65
5.21
4.06
3.30
G
H
J
Thermal Resistance
Characteristic
Thermal Resistance
junction to lead
Symbol
Value
20oC/W
Unit
SUGGESTED SOLDER
PAD LAYOUT
R
JL
0.090"
Thermal Resistance
junction to ambient
On recommended
pad layout
100oC/W
R
JA
Typical positive
temperature
coefficient for
0.085”
0.1%/oC
△
△
TJ
VBR
/
breakdown voltage
0.070”
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M C C
TSMBJ1006C thru TSMBJ1024C
℃
ELECTRICAL CHARACTERISTIC @25 Unless otherwise specified
Rated
Repetitive Off-
state Voltage Curr ent@VDRM
Off-state
Leakage
On-State
Breakover
Voltage
Off-State
Capacitance
Parameter
Voltage Breakover Current Holding Current
@I =1.0A
T
Symbol
Units
Limit
VDRM
Volts
Max
75
IDRM
uA
Max
5
5
5
5
5
5
5
VBO
Volts
Max
98
130
180
220
265
300
350
400
VT
Volts
Max
5
5
5
5
5
5
IBO-
mA
Min
50
50
50
50
50
50
50
IBO+
mA
Max
800
800
800
800
800
800
800
800
IH-
IH+
mA
Max
800
800
800
800
800
800
800
800
CJ
pF
mA
Min
150
150
150
150
150
150
150
150
Typ.
200
120
120
120
80
80
80
80
TSMBJ1006C
TSMBJ1007C
TSMBJ1010C
TSMBJ1012C
TSMBJ1016C
TSMBJ1018C
TSMBJ1022C
TSMBJ1024C
90
140
160
190
220
275
320
5
5
5
50
MAXIMUM RATED SURGE WAVEFORM
Waveform
Standard
GR-1089-CORE
IEC 61000-4-5
FCC Part 68
Ipp (A)
2/10 us
500
100
50
0
Peak value (Ipp)
tr = rise time to peak value
tp = decay time to half value
8/20 us
400
10/160 us
10/700 us
10/560 us
10/1000 us
200
Half value
ITU-T K20/21
FCC Part 68
200
150
tr
tp
TIME
GR-1089-CORE
100
Symbol
VDRM
IDRM
VBR
IBR
Parameter
I
Stand-off voltage
IPP
Leakage current at stand-off voltage
Breakdown voltage
IBO
IH
Breakdown current
IBR
IDRM
V
Breakover voltage
VBO
IBO
VBR
VDRM
VT
Breakover current
VBO
NOTE: 1
NOTE: 2
Holding current
IH
On state voltage
Peak pulse current
Off-state capacitance
VT
IPP
CO
：
NOTE
1. I > ( V / R ) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state.
H
L
L
The surge recovery time. It does not exceed 30ms.
2. Off-state capacitance measured at f=1.0MHz , 1.0Vrms signal , VR=2Vdc bias.
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M C C
TSMBJ1006C thru TSMBJ1024C
Fig.1 - Off-State Current v.s Junction Temperature
Fig.2 - Relative Variation of
Breakdown Voltage v.s Junction Temperature
100
10
1.2
1.15
1.1
V
(T )
BR
J
℃
(T =25 )
J
V
BR
1
VDRM = 50V
1.05
1
0.1
0.01
0.001
0.95
0.9
-25
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100 125 150 175
℃
Tj , JUNCTION TEMPERATURE (
)
℃
Tj ; JUNCTION TEMPERATURE (
)
Fig.3 - Relative Variation of
Breakover Voltage v.s Junction Temperature
Fig.4 - On-State Current v.s On-State Voltage
100
10
1
1.1
1.05
1
V
(T )
BO
J
℃
(T =25 )
J
V
BO
℃
= 25
T
J
0.95
-50
-25
0
25
50
75
100 125 150 175
1
2
3
4
5
6
7
8
9
℃
Tj ; JUNCTION TEMPERATURE (
)
V(T) ; ON-STATE VOLTAGE
Fig.5 - Relative Variation of
Holding Current v.s Junction Temperature
Fig.6 - Relative Variation of
Junction Capacitance v.s Reverse Voltage Bias
2
1.5
1
1
C (VR)
O
℃
Tj =25
f=1MHz
= 1V
I
(T )
J
H
C
O
(VR = 1V)
0.5
℃
(T =25 )
J
I
V
H
RMS
0
0.1
-50
-25
0
25
50
75
100
125
1
10
VR ; REVERSE VOLTAGE (V)
100
℃
Tj ; JUNCTION TEMPERATURE (
)
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M C C
TSMBJ1006C thru TSMBJ1024C
TYPICAL APPLICATION CIRCUITS
FUSE
RING
TELECOM
EQUIPMENT
TSPD 1
E.G. MODEM
TIP
PTC
RING
TSPD 1
TSPD 2
TELECOM
EQUIPMENT
E.G. ISDN
PTC
TIP
PTC
RING
TSPD 2
TELECOM
EQUIPMENT
TSPD 1
E.G. LINE CARD
TSPD 3
PTC
TIP
The PTC (Positive Temperature Coefficient) is an overcurrent protection device.
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