UML6N-TP-HF [MCC]
Small Signal Bipolar Transistor, 0.5A I(C), NPN,;型号: | UML6N-TP-HF |
厂家: | Micro Commercial Components |
描述: | Small Signal Bipolar Transistor, 0.5A I(C), NPN, 晶体 二极管 晶体管 |
文件: | 总4页 (文件大小:466K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
M C C
TM
Micro Commercial Components
ꢀꢁꢂꢃꢄꢅꢆꢄꢇꢇꢈꢃꢂꢁꢉꢊꢅꢆomponents
20736 Marilla Street Chatsworth
ꢆꢋꢅꢌꢍꢎꢍꢍ
UML6N
ꢏꢐꢄꢑꢈꢒꢅꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢎ
$ꢉ%ꢒꢅ ꢅ ꢅ ꢓꢔꢍꢔ ꢅ!ꢕꢍ"#ꢌꢎꢌ
Features
•
2SC5585 and RB521S-30 are housed independently
Lead Free Finish/RoHS Compliant ("P" Suffix designates
ISOLATED
·
(5)
(4)
RoHS Compliant. See ordering information)
TRANSISTOR AND DIODES
·
·
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Di1
Tr2
MARKING:L6
SOT-353
(1)
(2) (3)
zAbsolute maximum ratings (Ta=25°C)
D
Di1
e
Parameter
Symbol
Limits
200
1
Unit
mA
A
2
3
4
1
Average revtified forward current
Forward current surge peak (60Hz, 1∞)
Reverse voltage (DC)
IO
I
FSM
E1
E
V
R
30
V
Junction temperature
Tj
125
°C
5
e1
Tr2
Parameter
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
VCBO
VCEO
VEBO
15
12
6
V
V
V
A1
A2
C
I
C
500
1
mA
A
Collector current
I
CP
b
∗1
Power dissipation
Junction temperature
P
Tj
d
120
150
mW
°C
L
L1
∗1 Each terminal mounted on a recommended.
DIMENSIONS
INCHES
MIN
---
.035
.006
.003
0.79
.045
.085
MM
Di1 / Tr2
DIM
A1
A2
b
c
D
MAX
MIN
---
MAX
0.100
1.000
0.350
0.150
2.200
1.350
2.450
NOTE
Parameter
Power dissipation
Storage temperature
Symbol
Limits
150
−55 to +125
Unit
mW
°C
.004
.039
.014
.006
.087
.053
.096
∗
0.900
0.150
0.080
2.000
1.150
2.150
P
d
Tstg
* Each terminal mounted on a recommended.
E
E1
e
e1
L
.026TYP
.055
.021REF
.018
0.650TYP
1.200 1.400
0.525REF
0.260 0.460
.047
.010
L1
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Revision: A
2011/01/01
UML6N
M C C
TM
Micro Commercial Components
zElectrical characteristics (Ta=25°C)
Di1
Parameter
Forward voltage
Reverse current
Symbol
Min.
−
−
Typ.
0.40
4.0
Max.
0.50
30
Unit
V
Conditions
VF
I
F
=200mA
I
R
µA
VR=10V
Tr2
Parameter
Symbol
BVCEO
BVCBO
BVEBO
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
12
15
6
−
−
−
−
−
90
−
320
7.5
−
−
−
100
100
250
680
−
V
V
I
I
I
C
=1mA
C=10µA
V
E
=10µA
CB=15V
EB=6V
I
CBO
EBO
CE(sat)
FE
−
−
−
270
−
nA
nA
mV
−
MHz
pF
V
V
Emitter cut-off current
I
Collector-emitter saturation voltage
DC current gain
V
I
C
=200mA, I
B
=10mA
=10mA
=−10mA, f=100MHz
=0mA, f=1MHz
h
V
V
V
CE=2V, I
CE=2V, I
CB=10V, I
C
Transition frequency
f
T
E
E
Collector output capacitance
Cob
−
−
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Revision: A
2011/01/01
M C C
Typical Characteristics
TM
Micro Commercial Components
zElectrical characteristic curves
Di1
1
10m
1m
Ta=125°C
75°C
100m
C
°
10m
100µ
10µ
1µ
5
2
5
1
C
7
=
5
a
2
25°C
1m
−
100µ
−25°C
10µ
1µ
100n
10n
0
0.1
0.2
0.3
0.4
0.5
(V)
0.6
0
10
20
30
FORWARD VOLTAGE : V
F
REVERSE VOLTAGE : V
R
(V)
Fig.1 Forward characteristics
Fig.2 Reverse characteristics
Tr2
1000
1000
1000
100
10
V
CE=2V
V
CE=2V
Ta=25°C
Pulsed
Ta=125°C
Pulsed
Pulsed
Ta=25°C
Ta=−40°C
100
10
1
100
10
C
°
C
C
°
°
IC/IB=50
40
−
Ta=125
Ta=25
IC/IB=20
Ta=
IC/IB=10
11
10
100
1000
1 1
10
100
1000
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs.
collector current
Fig.5 Collector-emitter saturation voltage
Fig.3 Grounded emitter propagation
characteristics
vs. collector current ( Ι )
1000
10000
1000
100
1000
I
C
/I
B
=20
VCE=2V
I
C B=20
/I
Pulsed
Ta=25°C
Pulsed
Pulsed
Ta=−40°C
Ta=25°C
100
10
100
10
Ta=
1
25°C
Ta=125°C
25°C
−40°C
11
10
100
1000
10 1
10
100
1000
11
10
100
1000
EMITTER CURRENT : I
E
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : IC (mA)
Fig.7 Base-emitter saturation voltage
vs. collector current
Fig.8 Gain bandwidth product
vs. emitter current
Fig.6 Collector-emitter saturation voltage
vs. collector current ( ΙΙ )
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Revision: A
2011/01/01
M C C
TM
Micro Commercial Components
Ordering Information :
Device
Packing
Part Number-TP
Tape&Reel;3Kpcs/Reel
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Revision: A
2011/01/01
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