10N65F [MDD]
650V N-Channel Power MOSFET;
| 型号： | 10N65F |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | 650V N-Channel Power MOSFET |
| 文件： | 总4页 (文件大小：527K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10N65F
650V N-Channel Power MOSFET
Features
◆10A, 650V, RDS(on) =0.85 Ω@VGS=10V
◆Fast Switching
◆Improved dv/dt capability
◆100% avalanche tested
◆Low gate charge
Application
◆Electronic Ballast
◆Electronic Transformer
◆Switching mode power supply
Absolute Maximum Ratings(Tc=25°C unless otherwise noted)
Symbol
Parameters
Value
Unit
VDSS
Drain-source Voltage
Gate-source Voltage
650
V
VGS
±30
10
V
A
--TC=25°C
ID
Continuous Drain Current
Drain Current-Pulsed ①
Power Dissipation
--TC=100°C
5.8
A
IDM
PD
40
A
--(TC = 25°C)
50
W
-- Derate above 25°C
4.8
W/°C
°C
°C
mJ
A
Tj
Junction Temperature
150
-55-150
250
10
TSTG
EAS
IAR
Storage Temperature
Single Pulse Avalanche Energy②
Avalanche Current①
Thermal Characteristics
Min
Typ
Max
Unit
Symbol
Parameters
RθJC
Thermal Resistance Junction-case
2.5
°C /W
RθJA
Thermal Resistance Junction-ambient
62.5
°C /W
1 / 4
Electronic Characteristics(Tc=25°C unless otherwise noted)
Symbol
Characteristics
Test condition
Min Typ Max Unit
Off Characteristics
BVDSS
Drain-source Breakdown Voltage
Breakdown Voltage Temperature
Coefficien ③
VGS=0V ,ID=250μA
ID=250μA
650
V
△BVDSS/△Tj
0.7
V/℃
(Referenced to 25℃)
VDS=650V,VGS=0V
VDS=520V,Tj=125℃
VGS=+20V
1
μA
μA
μA
μA
IDSS
Drain-source Leakage Current
Gate-body Leakage Current
10
10
-10
IGSSF
IGSSR
VGS=-20V
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS=VDS,ID=250μA
VGS=10V,ID=5.0A
VDS=40V,ID=5.0A
2.0
4.0
V
Ω
S
RDS(on)
gFS
Static Drain-source On Resistance
Forward Transconductance
0.85
8.0
Dynamic and Switching Characteristics
Ciss
Coss
Crss
td(on)
tr
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Turn-On Rise Time
1758
153
15
pF
pF
VGS=0V,VDS=25V,f=1.0MHZ
pF
ns
56
ns
ns
150
300
166
VDD = 325V, ID = 10 A,
RG = 25 Ω③
td(off)
tf
Turn-Off Delay Time
Turn-Off Fall Time
ns
Qg
Total Gate Charge
45
6.8
nC
nC
VDS = 520 V, ID = 10 A,
Qgs
Qgd
Gate-Source Charge
Gate-Drain Charge
VGS = 10 V③
nC
18.5
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-source Diode Forward Current
10
40
A
A
V
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-source Forward Voltage
Tj=25℃,IS=10A,VGS =0V
1.5
Notes ：
①Repetitive Rating:Pulse width limited by maximum junction temperature
②EAS Test condition
L =12mH, IAS =10A, VDD = 50V, RG = 25 Ω, Starting TJ = 25°C
③ Pulse Test : Pulse width ≤300 µ s, Duty cycle≤2%
2 / 4
Typical Characteristics
3 / 4
TO-220F Package Dimensions
Symbol
Min
Max
Symbol
Min
Max
Typ.2.54
A
A1
A2.
A3
B1
B2
B3
C
9.96
10.36
D
D1
D2
D3
E
7
1.25
0.7
1.35
0.9
3.08
9.25
15.7
4.5
3.28
9.65
16.1
4.9
0.28
2.34
0.48
2.74
0.7
E1
E2
E3
E4
α(度)
1.0×45°
4.6
5
3.2
3.4
0.36
2.55
0.65
2.95
C1
C2
15.6
9.55
16
30°
9.95
4 / 4
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