1N4001G_V02 [MDD]
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER;
| 型号： | 1N4001G_V02 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GLASS PASSIVATED GENERAL PURPOSE RECTIFIER |
| 文件： | 总2页 (文件大小：667K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N4001G THRU 1N4007G
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
GLASS PASSIVATED GENERAL PURPOSE RECTIFIER
A-405
Features
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated junction
1.0 (25.4)
MIN.
Open Junction chip
0.107 (2.7)
0.080 (2.3)
DIA.
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed
250℃/10 seconds at terminals
0.205(5.2)
0.166(4.2)
Mechanical Data
1.0 (25.4)
MIN.
Case : JEDEC A-405 Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
0.025 (0.65)
0.021 (0.55)
DIA.
Weight
: 0.008 ounce, 0.23 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unless otherwisespecified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
1N
4001G
MDD
1N
1N
4002G
MDD
1N
1N
4003G
MDD
1N
1N
4004G
MDD
1N
1N
4005G
MDD
1N
1N
4006G
MDD
1N
1N
Parameter
4007G
MDD
1N
SYMBOLS
UNITS
Marking Code
4001G
50
4002G
100
4003G
200
4004G
400
4005G
600
4006G
800
4007G
1000
V
RMM
RMS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
V
V
V
35
50
70
140
200
280
400
420
600
560
800
700
V
100
1000
Maximum DC blocking voltage
V
DC
Maximum average forward rectified current
I
(AV)
1.0
A
at TA=75
℃
Peak forward surge current
30
I
FSM
8.3ms single half sine-wave
A
superimposed onrated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
1.10
V
F
V
5.0
50.0
Maximum DC reverse current
at rated DC blocking voltage
TA=25℃
μA
I
R
TA=100℃
15.0
50.0
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
C
J
pF
℃/W
℃
R
θ
JA
STG
-55 to +150
Operating junction and storage temperature range
J,
T T
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
(9.5mm)lead length,P.C.B. mounted
”
2.Thermal resistance from junction to ambient at 0.375
DN:T19C31A1
http://www.microdiode.com
Rev:2019A1
Page :1
1N4001G THRU 1N4007G
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
Ratings And Characteristic Curves
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
25
20
15
1.0
0.8
0.6
Single Phase
0.4
Half Wave 60Hz
Resistive or
inductive Load
0.2
0
10
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
TA=75 C
0
25
50
75
100
125
150
175
5.0
1
10
100
AMBIENT TEMPERATURE, C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=150 C
TJ=100 C
1
0.1
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
0.01
0.01
TJ=25 C
0.6
0.8
1.0
1.2
1.4
1.5
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
TJ=25 C
10
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
The curve above is for reference only.
http://www.microdiode.com
Rev:2019A1
Page :2
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