1N5817S [MDD]

Reverse Voltage - 20 to 40Volts Forward Current -1.0 Ampere; 反向电压 - 20 40Volts正向电流-1.0安培
1N5817S
型号: 1N5817S
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

Reverse Voltage - 20 to 40Volts Forward Current -1.0 Ampere
反向电压 - 20 40Volts正向电流-1.0安培

文件: 总2页 (文件大小:74K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
1N5817S THRU 1N5819S  
SCHOTTKY BARRIER RECTIFIER  
Reverse Voltage - 20 to 40Volts Forward Current -  
1.0 Ampere  
A-405  
FEATURES  
Plastic package has Underwriters Laboratory  
Flammability Classification 94V-0  
1.0 (25.4)  
MIN.  
Metal silicon junction,majority carrier conduction  
Guardring for overvoltage protection  
0.107 (2.7)  
0.080 (2.0)  
DIA.  
Low power loss,high efficiency  
High current capability,low forward voltage drop  
High surge capability  
For use in low voltage,high frequency inverters,  
free wheeling,and polarity protection applications  
High temperature soldering guaranteed:  
0.205 (5.2)  
0.160(4.1)  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
1.0 (25.4)  
MIN.  
0.025 (0.65)  
0.021(0.55)  
DIA.  
MECHANICAL DATA  
Case: JEDEC A-405 molded plastic body  
Terminals: Plated axial leads, solderable per MIL-STD-750,  
Method 2026  
Dimensions in inches and (millimeters)  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Weight:0.008 ounce, 0.23 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for current capacitive load derate by 20%.  
SYMBOLS  
1N5817S  
1N5818S  
1N5819S  
MDD Catalog  
UNITS  
Number  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
20  
14  
20  
30  
21  
30  
40  
28  
40  
VOLTS  
VOLTS  
VOLTS  
VRRM  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forward rectified current  
0.375(9.5mm) lead length at TL=90 C  
Peak forward surge current  
I(AV)  
1.0  
Amp  
IFSM  
25.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
VF  
IR  
0.450  
0.550  
0.600  
Maximum instantaneous forward voltage at 1.0A  
Volts  
mA  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
0.5  
10.0  
TA=100 C  
Typical junction capacitance (NOTE 1)  
CJ  
RθJA  
pF  
C/W  
C
110.0  
50.0  
Typical thermal resistance (NOTE 2)  
Operating junction and storage temperature range  
TJ,TSTG  
-65 to +125  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted  
MDD ELECTRONIC  
RATINGS AND CHARACTERISTIC CURVES 1N5817S THRU 1N5819S  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
30  
1
0.75  
0.5  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
25  
20  
15  
10  
5.0  
0
RESISTIVE OR  
INDUCTIVE LOAD  
0.375(9.5mm)  
LEAD LENGTH  
0.25  
0
0
20  
40  
60  
80  
100  
120  
140  
LEAD TEMPERATURE, C  
1
10  
100  
NUMBER OF CYCLES AT 60 Hz  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
1,00  
10  
50  
10  
TJ=125 C  
TJ=100 C  
1
0.1  
1
TJ=25 C  
TJ=75 C  
TJ=25 C  
0.1  
PULSE WIDTH=300 µs  
1%DUTY CYCLE  
0.01  
0.001  
0.01  
0
0.2  
0.4 0.6  
0.8 1.0  
1.2  
1.4 1.6  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE  
400  
100  
100  
10  
1
TJ=25 C  
f=1.0MHz  
Vsig=50mVp-p  
0.1  
0.01  
0.1  
1
10  
100  
10  
0.1  
1.0  
10  
100  
REVERSE VOLTAGE,VOLTS  
t,PULSE DURATION,sec.  
MDD ELECTRONIC  

相关型号:

1N5817SF

SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere
GXELECTRONICS

1N5817SF

SCHOTTKY BARRIER RECTIFIER Reverse Voltage 20 to 40 Volts Forward Current - 1.0Ampere
MDD

1N5817S_V01

SCHOTTKY BARRIER RECTIFIER
MDD

1N5817T-G

Schottky Barrier Rectifiers
COMCHIP

1N5817T/R

1A, 20V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2
NXP

1N5817T/R

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM),
PHILIPS

1N5817T26A

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
FAIRCHILD

1N5817T26R

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41
FAIRCHILD

1N5817T50A

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, D4, 2 PIN
FAIRCHILD

1N5817T50R

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, D4, 2 PIN
FAIRCHILD

1N5817TR

Schottky Rectifier, 1.0 A
VISHAY

1N5817TR-RPCU

Rectifier Diode, Schottky, 1 Element, 1A, 20V V(RRM), Silicon, DO-41, DO-41SP, 2 PIN
CENTRAL