DSK110K110 [MDD]

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器
DSK110K110
型号: DSK110K110
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
表面贴装肖特基整流器

文件: 总2页 (文件大小:111K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DSK12 THRU DSK120  
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Reverse Voltage - 20 to 200 Volts Forward Current - 1.0 Ampere  
SOD-123FL  
FEATURES  
Cathode Band  
Top View  
The plastic package carries Underwriters Laboratory  
Flammability Classification 94V-0  
Metal silicon junction,majority carrier conduction  
Low power loss,high efficiency  
High forward surge current capability  
High temperature soldering guaranteed:  
2.8±0.1  
250 C/10 seconds,0.375(9.5mm) lead length,  
5 lbs. (2.3kg) tension  
0.6±0.25  
MECHANICAL DATA  
Case: JEDEC SOD-123FL molded plastic body  
Terminals: Solderable per MIL-STD-750,  
Method 2026  
3.7±0.2  
Polarity: Color band denotes cathode end  
Mounting Position: Any  
Dimensions in millimeters  
Weight:0.0007 ounce, 0.02 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
DSK17 DSK18 DSK19  
DSK110 DSK115 DSK120 UNITS  
DSK12 DSK13 DSK14 DSK15 DSK16  
SYMBOLS  
MDD Catalog  
Number  
K17  
K18  
K19  
K110  
100  
70  
K115  
150  
105  
150  
K120  
200  
140  
200  
K12  
20  
K13  
30  
K14  
40  
K15  
50  
K16  
60  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
70  
80  
90  
VRRM  
VRMS  
VDC  
VOLTS  
VOLTS  
VOLTS  
Amp  
14  
21  
28  
35  
42  
49  
56  
63  
20  
30  
40  
50  
60  
70  
80  
90  
100  
Maximum DC blocking voltage  
Maximum average forward rectified current  
I(AV)  
IFSM  
VF  
1.0  
Peak forward surge current  
25.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
0.55  
110  
0.70  
0.85  
0.95  
Maximum instantaneous forward voltage at 1.0A  
Volts  
mA  
Maximum DC reverse current  
at rated DC blocking voltage  
TA=25 C  
0.5  
0.2  
2.0  
IR  
5.0  
80  
TA=100 C  
10.0  
Typical junction capacitance (NOTE 1)  
CJ  
pF  
Operating junction temperature range  
Storage temperature range  
-65 to +125  
-65 to +150  
TJ  
TSTG  
C
C
-65 to +150  
Note:1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
MDD ELECTRONIC  
RATINGS AND CHARACTERISTIC CURVES DSK12 THRU DSK120  
FIG. 1- FORWARD CURRENT DERATING CURVE  
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD  
SURGE CURRENT  
1
0.8  
0.6  
0.4  
0.2  
0
30  
8.3ms SINGLE HALF SINE-WAVE  
(JEDEC Method)  
25  
20  
15  
10  
5.0  
0
Single Phase  
Half Wave 60Hz  
Resistive or  
inductive Load  
DSK12-DSK16  
DSK17-DSK120  
0
25  
50  
75  
100  
125  
150  
175  
1
10  
100  
AMBIENT TEMPERATURE, C  
NUMBER OF CYCLES AT 60 Hz  
FIG. 3-TYPICAL INSTANTANEOUS FORWARD  
CHARACTERISTICS  
FIG. 4-TYPICAL REVERSE CHARACTERISTICS  
100  
20  
10  
10  
1
TJ=100 C  
TJ=75 C  
1
0.1  
TJ=25 C  
PULSE WIDTH=300 µs  
1%DUTY CYCLE  
DSK12-DSK14  
DSK15-DSK16  
0.1  
DSK17-DSK115  
DSK120  
TJ=25 C  
0.01  
0.001  
0.01  
0.2  
0.4  
0.6  
0.8  
1.0 1.1  
0
20  
40  
60  
80  
100  
INSTANTANEOUS FORWARD VOLTAGE,  
VOLTS  
PERCENT OF PEAK REVERSE VOLTAGE,%  
FIG. 5-TYPICAL JUNCTION CAPACITANCE  
2000  
1000  
DSK12-DSK14  
DSK15-DSK120  
100  
TJ=25 C  
10  
0.1  
1.0  
10  
100  
REVERSE VOLTAGE,VOLTS  
MDD ELECTRONIC  

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