EMB2S_V01 [MDD]
GLASS PASSIVATED SUPER FAST RECOVERY BRIDGE RECTIFIERS;
| 型号： | EMB2S_V01 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | GLASS PASSIVATED SUPER FAST RECOVERY BRIDGE RECTIFIERS 超快速恢复二极管 |
| 文件： | 总2页 (文件大小：534K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMB2S THRU EMB8S
Voltage Range - 200 to 600 V olts Current - 0.5/0.8 Ampere
GLASS PASSIVATED SUPER FAST RECOVERY BRIDGE RECTIFIERS
Features
MBS
Ideal for printed circuit board
Reliable low cost construction utilizing molded plastic technique
High temperature soldering guaranteed: 260°/10 seconds at 5
lbs., (2.3kg) tension
.193(4.90)
.177(4.50)
.043(1.10)
.028(0.70)
.053(1.53)
.037(0.95)
.033(0.84)
.022(0.56)
Small size, simple installation
.276(7.0)
MAX
.157(4.00)
.142(3.60)
High surge current capability
+
.083(2.12)
.043(1.10)
Glass passivated chip junction
.014(0.35)
.006(0.15)
.102(2.60)
.087(2.20)
Mechanical Data
Case : JEDEC MBS Molded plastic body
Terminals : Solder plated, solderable per MIL-STD-750,Method 2026
Polarity : Polarity symbol marking on body
Mounting Position: Any
.106(2.70)
.118(3.0)
MAX
.090(2.30)
.008(0.20)
MAX
Weight
: 0.0035 ounce, 0.1 grams
Dimensions in inches and (millimeters)
Maximum Ratings And Electrical Characteristics
Ratings at 25°C ambient temperature unle ss otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
EMBS2
EMBS4
EMBS6
EMBS8
Parameter
UNITS
SYMBOLS
MDD
MDD
MDD
MDD
EMBS2
EMBS4
EMBS6
EMBS8
Marking Code
V
V
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
100
70
100
200
140
200
400
280
400
600
420
600
Maximum DC blocking voltage
Maximum average forward rectified current
On glass-epoxy P.C.B.(Note1)
On aluminum substrate(Note2)
Peak forward surge current,
0.5
0.8
A
IF(AV)
IFSM
30
A
V
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage drop
per leg at 0.4A
0.95
1.25
1.7
VF
IR
5
500
Maximum DC reverse current
at rated DC blocking voltage
TA=25°C
uA
uA
TA=100°C
28
85
RθJL
RθJA
Typical thermal resistance
°C/W
Maximum reverse recovery time
Operating temperature range
storage temperature range
°C
°C
°C
35
trr
TJ
-55 to +150
-55 to +150
TSTG
NOTES:1.On glass epoxy P.C.B. mounted on 0.05x0.05''(1.3x1.3mm) pads.
2.On aluminum substrate P.C.B. with an area of 0.8''x0.8''(20x20mm) mounted on 0.05X0.05''(1.3X1.3mm) solder pad.
Thermal resistance form junction to ambient and junction to lead mounted on P.C.B. with 0.2X0.2''(5X5mm)
3.
4.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A.
copper pads.
DN:T19808A0
https://www.microdiode.com
Rev:2019A0
Page :1
EMB2S THRU EMB8S
Voltage Range - 200 to 600 V olts Current - 0.5/0.8 Ampere
Ratings And Characteristic Curves
FIG.2 PEAK FORWARD SURGE CURRENT
FIG.1 FORWARD DERATING CURVE
35
30
0.8
Aluminum Substrate
0.7
25
20
15
10
0.6
0.5
0.4
Glass Epoxy
P.C.B.
0.3
0.2
0.1
5
0
0
)
0
20
40
60
80
100
120 140
160
1
10
100
Ambient Temperature, (°C )
Number Of Cycles At 60H
z
FIG.4 TYPICAL REVERSE CHARACTERISTICS
FIG.3 TYPICAL FORWARD CHARACTERISTICS
100
20
10
TJ=25 C
PULSE WIDTH=300 µs
2%DUTY CYCLE
TJ=125
10
1
1
0.1
EMB2S-EMB4S
EMB6S
0.1
TJ=25
EMB8S
0.2
0.6
1.0
1.4
1.8 2.0
0.01
0
20
40
60
80
100
Instantaneous Forward Voltage, ( V )
Percent Of Rated Peak Reverse Voltage, %
The curve above is for reference only.
https://www.microdiode.com
Rev:2019A0
Page :2
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