ER2M [MDD]

SURFACE MOUNT SUPER FAST RECTIFIER; 表面装载超快速整流器
ER2M
型号: ER2M
厂家: Chendahang Electronics Co., Ltd    Chendahang Electronics Co., Ltd
描述:

SURFACE MOUNT SUPER FAST RECTIFIER
表面装载超快速整流器

二极管 光电二极管 超快速恢复二极管
文件: 总3页 (文件大小:196K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
ER2A THRU ER2M  
SURFACE MOUNT SUPER FAST RECTIFIER  
Reverse Voltage - 50 to 1000 Volts Forward Current -  
2.0 Amperes  
DO-214AA  
FEATURES  
(HSMB) (Round Lead)  
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
H
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Compliant. See ordering information)  
Case Material: Molded Plastic. UL Flammability  
Cathode Band  
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ  
Classification Rating 94V-0 and  
Easy Pick And Place  
MSL rating 1  
J
High Temp Soldering: 260°C for 10 Seconds At Terminals  
Ultrafast Recovery Times For High Efficiency  
A
C
E
D
B
F
G
MECHANICAL DATA  
DIMENSIONS  
INCHES  
MM  
Case: JEDEC DO-214AA molded plastic body over passivated chip  
Terminals: Solder plated, solderable per MIL-STD-750,  
Method 2026  
DIM  
A
MIN  
.078  
.075  
.002  
-----  
MAX  
.116  
.089  
.008  
.02  
MIN  
1.98  
1.90  
.05  
MAX  
2.95  
2.25  
.20  
NOTE  
B
C
D
E
Polarity: Color band denotes cathode end  
Mounting Position: Any  
-----  
.51  
.035  
.065  
.205  
.160  
.130  
.055  
.091  
.224  
.180  
.155  
.90  
1.40  
2.32  
5.69  
4.57  
3.94  
F
1.65  
5.21  
4.06  
3.30  
G
H
J
Weight  
:0.005 ounce, 0.138 grams  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 C ambient temperature unless otherwise specified.  
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.  
SYMBOLS  
UNITS  
ER2A ER2B ER2C ER2D ER2E ER2G ER2J ER2K ER2M  
MDD Catalog  
Number  
Maximum repetitive peak reverse voltage  
Maximum RMS voltage  
VRRM  
VOLTS  
VOLTS  
VOLTS  
50  
35  
50  
100  
70  
150 200 300  
105 140 210  
150 200 300  
400  
280  
400  
600 800 1000  
560  
700  
420  
600  
VRMS  
VDC  
Maximum DC blocking voltage  
Maximum average forward rectified current  
at TL=55 C  
100  
800 1000  
I(AV)  
2.0  
Amps  
Peak forward surge current  
IFSM  
VF  
50.0  
8.3ms single half sine-wave superimposed on  
rated load (JEDEC Method)  
Amps  
Volts  
0.975  
1.35  
60  
1.7  
Maximum instantaneous forward voltage at 2.0A  
Maximum DC reverse current  
at rated DC blocking voltage  
Maximum reverse recovery time  
TA=25 C  
TA=100 C  
(NOTE 1)  
5.0  
150.0  
µ
A
IR  
trr  
ns  
50  
100  
Typical junction capacitance (NOTE 2)  
CJ  
RθJA  
pF  
C/W  
C
25.0  
20.0  
Typical thermal resistance (NOTE 3)  
Operating junction and storage temperature range  
TJ T, STG  
-50 to +150  
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A  
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
sec, Duty cycle 2%  
3.Pulse test: Pulse width 200  
4.High Temperature Solder Exemptions Applied, see EU Directive Annex 7.  
MDD ELECTRONIC  
RATINGS AND CHARACTERISTIC CURVES ER2A THRU ER2M  
Figure 1  
Typical Forward Characteristics  
20  
Figure 2  
Forward Derating Curve  
ER2G-2J  
10  
6
2.4  
2.2  
2.0  
ER2A -2D  
ER2K-2M  
4
2
1.8  
1.6  
1
.6  
.4  
1.4  
1.2  
Amps  
Amps  
1.0  
.8  
.2  
.6  
.4  
.2  
.1  
.06  
.04  
Single Phase, Half Wave  
60Hz Resistive or Inductive Load  
0
25  
50  
75  
100  
125  
150  
0
°C  
.02  
.01  
Average Forward Rectified Current - Amperesversus  
Ambient Temperature -°C  
.4  
.8  
1.2  
Volts  
1.6  
2.0  
2.4  
Instantaneous Forward Current - Amperesversus  
Instantaneous Forward Voltage - Volts  
Figure 3  
Junction Capacitance  
100  
60  
40  
20  
TJ=25°C  
pF  
10  
6
4
2
1
400  
1000  
.1  
.2  
.4  
1
2
10 20  
200  
4
40  
100  
Volts  
Junction Capacitance - pFversus  
Reverse Voltage - Volts  
MDD ELECTRONIC  
RATINGS AND CHARACTERISTIC CURVES ER2A THRU ER2M  
Figure 4  
Peak Forward Surge Current  
Figure 5  
New SMB Assembly  
50  
40  
30  
20  
Amps  
Round Lead  
Process  
10  
0
80  
100  
1
6
60  
4
10 20  
40  
8
2
Cycles  
Peak Forward Surge Current - Amperesversus  
Number Of Cycles At 60Hz - Cycles  
Figure 6  
Reverse Recovery Time Characteristic And Test Circuit Diagram  
50  
10Ω  
trr  
+0.5A  
0
Pulse  
Generator  
Note 2  
-0.25  
25Vdc  
Oscilloscope  
Note 1  
1Ω  
-1.0  
1cm  
Notes:  
1. Rise Time = 7ns max.  
Set Time Base for 20/100ns/cm  
Input impedance = 1 megohm, 22pF  
2. Rise Time = 10ns max.  
Source impedance = 50 ohms  
3. Resistors are non-inductive  
MDD ELECTRONIC  

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