ES3AF_V01 [MDD]

SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER;


型号：	ES3AF_V01
厂家：	Chendahang Electronics Co., Ltd
描述：	SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER 超快速恢复二极管
文件：	总3页 (文件大小：746K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

ES3AF THRU ES3JF

Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere

SURFACE MOUNT SUPER FAST RECOVERY RECTIFIER

Features

SMAF



The plastic package carries Underwriters Laboratory

Flammability Classification 94V-0

For surface mounted applications

Low reverse leakage



0.106(2.70)

0.094(2.40)

0.063 (1.60)

0.051 (1.30)

Built-in strain relief,ideal for automated

placement High forward surge current capability

High temperature soldering guaranteed:

250°C/10 seconds at terminals

0.146(3.70)

0.130(3.30)

Glass passivated chip junction

0.047(1.20)

0.035(0.90)

0.008(0.20)

0.005(0.12)

0.047(1.20)

0.031(0.80)

Mechanical Data

0.193(4.90)

0.173(4.40)

Case : JEDEC SMAF Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

Dimensions in inches and (millimeters)

Weight

: 0.00095 ounce, 0.027 grams

Maximum Ratings And Electrical Characteristics

Ratings at 25 C ambient temperature unless otherwise specified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

Parameter

ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF

SYMBOLS

UNITS

MDD

Marking Code

ES3AF ES3BF ES3CF ES3DF ES3EF ES3GF ES3JF

Maximum repetitive peak reverse voltage

Maximum RMS voltage

RMM

RMS

100

150

105

150

200

140

200

300

210

300

400

280

400

600

420

600

Maximum DC blocking voltage

100

(AV)

Maximum average forward rectified current

3.0

at TL=55

℃

Peak forward surge current

8.3ms single half sine-wave

superimposed onrated load (JEDEC Method)

FSM

Maximum instantaneous forward voltage at 3.0A

1.25

1.68

5.0

100.0

Maximum DC reverse current

at rated DCblocking voltage

=25

TA=125℃

(NOTE 1)

℃

μA

Maximum reverserecovery time

Typical junction capacitance (NOTE 2)

Typical thermal resistance (NOTE 3)

40.0

50.0



℃/

℃

Operating junction and storage temperature range

STG

-55 to +150

Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A

2.P.C.B. mounted with 2.0" X 2.0" (5 X 5 cm) copper pad areas.

3.Measured at 1MHz and applied reverse voltage of 4.0V D.C.

4.The typical data above is for referenceonly.

DN:T19712A0

https://www.microdiode.com

Rev:2019A0

Page :1

ES3AF THRU ES3JF

Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere

Ratings And Characteristic Curves

50 ohm

Noninductive

10 ohm

Noninductive

t_rr

+0.5

D.U.T

PULSE

GENERATOR

Note 2

25Vdc

approx

-0.25

1 ohm

NonInductive

OSCILLOSCOPE

Note 1

-1.0

Note：1.Rise Time = 7ns, max.

Input Impedance = 1megohm,22pF.

10ns/div

2. Ries Time =10ns, max.

Source Impedance = 50 ohms.

Set time Base for 10ns/div

Fig.3 Typical Reverse Characteristics

300

Fig.2 Maximum Average Forward Current Rating

4.0

3.5

3.0

2.5

100

T_J=125°C

2.0

1.5

T_J=75°C

1.0

T_J=25°C

0.5

0.0

Single phase half-wave 60 Hz

resistive or inductive load

0.1

100

125

150

175

100

Case Temperature (°C)

% of PIV.VOLTS

Fig.5 Typical Junction Capacitance

Fig.4 Typical Forward Characteristics

1.0

T_J=25°C

100

ES3AF~ES3DF

ES3EF/WS3GF

ES3JF

0.1

0.01

0.001

T_J=25°C

f = 1.0MHz

V_sig= 50mV_p-p

0.5

1.0

1.5

2.0

2.5

0.1

1.0

100

Instaneous Forward Voltage (V)

Reverse Voltage (V)

Fig.6 Maximum Non-Repetitive Peak

Forward Surge Current

120

100

8.3 ms Single Half Sine Wave

(JEDEC Method)

100

Number of Cycles

The curve above is for reference only.

https://www.microdiode.com

Rev:2019A0

Page :2

ES3AF THRU ES3JF

Reverse Voltage - 50 to 600 Volts Forward Current - 3.0 Ampere

Packing information

unit:mm

Symbol

Item

Tolerance

SMAF

Carrier width

0.1

0.05

2.0

min

0.5

0.1

0.3

1.0

2.80

4.75

1.42

1.50

Carrier length

Carrier depth

Sprocket hole

7" Reel outside diameter

7" Reel inner diameter

Feed hole diameter

Sprocket hole position

Punch hole position

Punch hole pitch

Sprocket hole pitch

Embossment center

Overall tape thickness

Tape width

178.00

54.40

13.00

1.75

5.05

4.00

2.00

0.30

8.00

Reel width

12.30

Note:Devices are packed in accor dance with EIA standar RS-481-A and specifications listed above.

Reel packing

APPROX.

GROSS WEIGHT

COMPONENT

SPACING

INNER

BOX

(m/m)

REEL

DIA,

(m/m)

CARTON

SIZE

(m/m)

BOX

CARTON

(pcs)

REEL

(pcs)

PACKAGE

REEL SIZE

(kg)

(m/m)

(pcs)

4.0

178

3,000

6,000

210*208*203

400*265*400

10.0

SMAF

120,000

Suggested Pad Layout

Symbol

Unit (mm)

Unit (inch)

0.071

1.8

1.6

3.8

0.063

0.150

2.2

5.4

0.087

0.213

Important Notice and Disclaimer

Microdiode Electronics (Jiangsu) reserves the right to make changes to this document and its products and

specifications at any time without notice. Customers should obtain and confirm the latest product information and

specifications before final design,purchase or use.

Microdiode Electronics (Jiangsu) makes no warranty, representation or guarantee regarding the suitability of its

products for any particular purpose, not does Microdiode Electronics (Jiangsu) assume any liability for application

assistance or customer product design. Microdiode Electronics (Jiangsu) does not warrant or accept any liability with

products which are purchased or used for any unintended or unauthorized application.

No license is granted by implication or otherwise under any intellectual property rights of Microdiode

Electronics (Jiangsu).

Microdiode Electronics (Jiangsu) products are not authorized for use as critical components in life support

devices or systems without express written approval of Microdiode Electronics (Jiangsu).

https://www.microdiode.com

Rev:2019A0

Page :3

相关型号：