ES3A_13 [MDD]
SURFACE MOUNT SUPER FAST RECTIFIER; 表面装载超快速整流器
| 型号： | ES3A_13 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SUPER FAST RECTIFIER |
| 文件： | 总2页 (文件大小：75K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES3A THRU ES3J
SURFACE MOUNT SUPER FAST RECTIFIER
3.0 Amperes
Reverse Voltage - 50 to 600 Volts Forward Current -
FEATURES
DO-214AB/SMC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
Low reverse leakage
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.280(7.11)
0.260(6.60)
Glass passivated chip junction
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
Case : JEDEC DO-214AB molded plastic body over passivated chip
Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Polarity : Color band denotes cathode end
Mounting Position : Any
0.320(8.13)
0.305(7.75)
Weight :0.007 ounce, 0.25grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
UNITS
ES3A ES3B ES3C ES3D ES3E ES3G ES3J
MDD Catalog
Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VOLTS
VOLTS
VOLTS
50
35
50
100
70
150 200 300
105 140 210
150 200 300
400
280
400
600
420
600
VRRM
VRMS
VDC
Maximum DC blocking voltage
Maximum average forward rectified current
at TL=75 C
100
I(AV)
3.0
Amps
Peak forward surge current
IFSM
VF
100.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
Volts
0.95
1.25
Maximum instantaneous forward voltage at 3.0A
1.7
Maximum DC reverse current
at rated DC blocking voltage
Maximum reverse recovery time
TA=25 C
TA=100 C
(NOTE 1)
5.0
100.0
µ
A
IR
trr
ns
35
Typical junction capacitance (NOTE 2)
CJ
RθJA
pF
C/W
C
45.0
47.0
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
TJ,TSTG
-50 to +150
Note:1.Reverse recovery condition IF=0.5A,IR=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES ES3A THRU ES3J
FIG. 1- FORWARD CURRENT DERATING CURVE
FIG. 2-MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
100
3.0
2.4
1.8
1.2
0.6
0
80
60
Single Phase
Half Wave 60Hz
Resistive or
40
inductive Load
20
0
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
0
25
50
75
100
125
150
175
1
10
100
AMBIENT TEMPERATURE,
C
NUMBER OF CYCLES AT 60 Hz
FIG. 3-TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
FIG. 4-TYPICAL REVERSE CHARACTERISTICS
1,000
100
10
20
10
TJ=25 C
PULSE WIDTH=300 µs
1%DUTY CYCLE
1
0.1
TJ=100 C
TJ=25 C
1
ES3A-ES3D
ES3E-ES3G
ES3J
0.1
0.01
0.01
0
0.4
0.8
1.2
1.6
1.8
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENTAGE OF PEAK REVERSE VOLTAGE,%
FIG. 5-TYPICAL JUNCTION CAPACITANCE
FIG. 6-TYPICAL TRANSIENT THERMAL IMPEDANCE
200
100
100
10
1
10
TJ=25 C
0.1
0.01
0.1
1
10
100
1
0.1
1.0
10
100
REVERSE VOLTAGE,VOLTS
t,PULSE DURATION,sec.
MDD ELECTRONIC
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