GBJ15005_V01 [MDD]

SILICON BRIDGE RECTIFIERS;


型号：	GBJ15005_V01
厂家：	Chendahang Electronics Co., Ltd
描述：	SILICON BRIDGE RECTIFIERS
文件：	总2页 (文件大小：546K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

GBJ15005 THRU GBJ1510

Reverse Voltage - 50 to 1000 Volts Forward Current - 15.0 Amperes

SILICON BRIDGE RECTIFIERS

Features

GBJ

? .134(3.4)

? .122(3.1)



Ideal for printed circuit board

.189(4.8)

1.193(30.3)

1.169(29.7)

.173(4.4)

.150(3.8)

.134(3.4)

Reliable low cost construction utilizing molded plastic technique

Plastic material has U/L lammability classification 94V-0

Low forward voltage drop,high current capability

.118(3.0)*45°

.106(2.7)

.096(2.3)

Mechanical Data

.094(2.4)

.078(2.0)

.043(1.1)

.035(0.9)

.114(2.9)

.098(2.5)

Case : JEDEC GBJ Molded plastic body

Terminals : Solder plated, solderable per MIL-STD-750,Method 2026

Polarity : Polarity symbol marking on body

Mounting Position: Any

.031(0.8)

.023(0.6)

.402(10.2)

.386(9.8)

.303(7.7).303(7.7)

SPACING

.287(7.3)

Dimensions in inches and (millimeters)

Maximum Ratings And Electrical Characteristics

Ratings at 25°C ambient temperature unless otherwisespecified.

Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.

GBJ

1504

GBJ

1506 1508

GBJ

1510

Parameter

15005 1501 1502

MDD MDD MDD MDD MDD MDD MDD

SYMBOLS

UNITS

Marking Code

GBJ

1504

400

GBJ

1506 1508

600

420

600

GBJ

1510

1000

15005 1501 1502

Maximum repetitive peak reverse voltage

Maximum RMS voltage

V^RRM

V^RMS

V^DC

100

200

140

200

800

560

800

280

400

700

1000

Maximum DC blocking voltage

Maximum average forward(with heatsink NOTE 2)

Rectified current @T c =100°C(without heatsink)

Peak forward surge current

15.0

3.7

I^(AV)

8.3ms single half sine-wave superimposed on

rated load (JEDEC Method)

Rating for Fusing(t<8.3ms)

I^FSM

240.0

A²s

I²t

240.0

Maximum forward voltage at 7.5A

1.0

V^F

500

Maximum DC reverse current

at rated DC blocking voltage

T^A=25°C

TA=125°C

I^R

Typical Junction Capacitance (Note 1)

Typical Thermal Resistance (Note 2)

Operating junction temperature range

storage temperature range

C^J

RθJA

T^J

0.8

°C/W

° C

-55 to +150

T^STG

NOTES:

1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.

2.Device mounted on 75mm*75mm*1.6mm Cu plate heatsink.

3.The typical data above is for reference only.

DN:T19813A0

https://www.microdiode.com

Rev:2019A0

Page :1

GBJ15005 THRU GBJ1510

Reverse Voltage - 50 to 1000 Volts Forward Current - 15.0 Amperes

Ratings And Characteristic Curves

FIG.1-FORWARD CURRENT DERATING CURVE

FIG.2-MAXMUN NON-REPETITIVE

SURGE CURRENT

WITH HEATSINK

300

250

200

150

SINGLE PHASE HALF WAVE 60Hz

RESISTIVE OR INDUCTIVE LOAD

WITHOUT HEATSINK

100

120

140

100

CASE TEMPERATURE, °C

NUMBER OF CYCLES AT 60Hz

FIG.4-TYPICAL FORWARD CHARACTERISTICS

100

FIG.3-TYPICAL JUNCTION CAPACITANCE

100

1.0

0.1

TJ = 25°C

PULSE WIDTH 300us

TJ=25°C,f=1MHZ

1.0

10.0

100

0.2

1.2

1.4 1.6 1.8

0.4

0.6 0.8 1.0

REVERSE VOLTAGE,(VOLTS)

INSTANTANEOUS FORWARD VOLTAGE,VOLTS

FIG.5-TYPICAL REVERSE CHARACTERISTICS

1000

100

TJ=125°C

TJ=100°C

TJ=50°C

TJ=25°C

1.0

0.1

PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)

100

The curve above is for reference only.

https://www.microdiode.com

Rev:2019A0

Page :2

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