SS810 [MDD]
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 表面贴装肖特基整流器
| 型号： | SS810 |
| 厂家： | 
Chendahang Electronics Co., Ltd |
| 描述： | SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SS82 THRU SS810
SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
8.0 Amperes
Reverse Voltage - 20 to 100 Volts Forward Current -
FEATURES
DO-214AB/SMC
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
For surface mounted applications
0.245(6.22)
0.220(5.59)
0.126 (3.20)
0.114 (2.90)
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
0.280(7.11)
0.260(6.60)
0.012(0.305)
0.006(0.152)
0.103(2.62)
0.079(2.06)
MECHANICAL DATA
Case: JEDEC DO-214AB molded plastic body
Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
0.060(1.52)
0.030(0.76)
0.008(0.203)MAX.
Polarity: Color band denotes cathode end
Mounting Position: Any
0.320(8.13)
0.305(7.75)
Weight:0.007 ounce, 0.25grams
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
SYMBOLS
SS86 SS88
SS82 SS83 SS835 SS84 SS845
SS810
UNITS
MDD Catalog
Number
20
14
20
30
21
30
35
40
28
40
45
60
42
60
80
56
80
Maximum repetitive peak reverse voltage
Maximum RMS voltage
100
70
VOLTS
VOLTS
VOLTS
VRRM
VRMS
VDC
24.5
35
31.5
45
100
Maximum DC blocking voltage
Maximum average forward rectified current
at TL =95 C
I(AV)
8.0
Amps
Peak forward surge current
IFSM
200.0
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Amps
VF
IR
0.65
0.85
Maximum instantaneous forward voltage at 8.0A
Volts
mA
Maximum DC reverse current
at rated DC blocking voltage
TA=25 C
1
20
400
TA=100 C
Typical junction capacitance (NOTE 1)
CJ
pF
C/W
C
Typical thermal resistance (NOTE 2)
Operating junction temperature range
RθJA
18.0
-50 to +150
TJ,
Storage temperature range
C
TSTG
-50 to +150
Note:
1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.P.C.B. mounted with 0.2x0.2
”(5.0x5.0mm) copper pad areas
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SS82 THRU SS810
Figure 1
Typical Forward Characteristics
Figure 2
Forward Derating Curve
1000
12
10
600
400
200
8.0
100
60
6.0
4.0
2.0
Amps
40
20
SS82-SS86
SS88-SS810
10
6
Amps
Single Phase, Half Wave
60Hz Resistive or Inductive Load
25qC
0
4
80
100
120
140
160
180
60
°C
2
Average Forward Rectified Current - Amperesversus
Junction Temperature -°C
1
.6
.4
.2
.1
.2
.6
.8
.4
1.0
1.2
1.4
Volts
Instantaneous Forward Current - Amperes versus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
600
400
200
TJ=25°C
pF
100
60
40
20
10
.1
.2
.4
1
2
10 20
200 400
100
1000
4
40
Volts
Junction Capacitance - pF versus
Reverse Voltage - Volts
MDD ELECTRONIC
RATINGS AND CHARACTERISTIC CURVES SS82 THRU SS810
Figure 4
Figure 5
Typical Reverse Characteristics
Peak Forward Surge Current
600
10
6
500
4
400
300
200
2
1
100°C
Amps
.6
.4
100
0
1
60 80 100
.2
.1
2
4
8 10 20
Cycles
40
75°C
mAmps
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
.06
.04
.02
.01
25°C
.006
.004
SS82 - 845
SS85 -810
.002
.001
20
40
60
80
Volts
100
120 140
Instantaneous Reverse Leakage Current - MicroAmperes versus
Percent Of Rated Peak Reverse Voltage - Volts
MDD ELECTRONIC
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