1N6386 [MDE]
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR; 玻璃钝化结瞬态电压抑制器型号: | 1N6386 |
厂家: | MDE SEMICONDUCTOR, INC. |
描述: | GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR |
文件: | 总2页 (文件大小:38K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
ICTE5.0 to ICTE15C MPTE-5 to MPTE-45
1N6373 to 1N6381 and 1N6382 to 1N6389
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
STANDOFF VOLTAGE- 5.0 to 45.0V
1500 Watt Peak Power
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94 V-O
• Glass passivated chip junction in Molded Plastic package
• 1500W surge capability at 1ms
• Excellent clamping capability
• Low zener inpedance
• Fast response time: typically less than
1.0 ps from 0 volts to BV min.
• Typical IR less than 1µA above 10V
• High temperature soldering guaranteed:
250°C/10 seconds/ .375", (9.5mm) lead
length, 5lbs., (2.3kg) tension
• Includes 1N6373 thru 1N6385
MECHANICAL DATA
Case: JEDEC DO-201 Molded plastic
Terminals: Plated Axial leads, solderable per
MIL-STD-750, Method 2026
Polarity: Color band denoted positive end (cathode)
except Bipolar
Mounting Position: Any
Weight: 0.045 ounces, 1.2 grams
MAXIMUM RATINGS AND CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
RATING
SYMBOL
VALUE
Minimum 1500
SEE TABLE 1
5.0
UNITS
Watts
Amps
Watts
Peak Pulse Power Dissipation at TA = 25 °C, TP = 1ms
(NOTE 1)
PPPM
IPPM
Peak Pulse Current of on 10/1000 µs waveform (Note 1)
Steady State Power Dissipation at TL = 75°C
Lead lengths .375", 9.5mm (Note 2)
PM(AV)
Peak Forward Surge Current, 8.3ms Single Half Sine-wave
Superimposed on Rated Load, (JEDEC Method)(Note 3)
IFSM
200
Amps
Maximum instantaneous forward voltage at 100A for
unidirectional only
VF
3.5
Volt
°C
Operatings and Storage Temperature Range
TJ, TSTG
-55 +175
NOTES:
1. Non-repetitive current pulse, per Fig.3 and derated above Ta=25 °C per Fig.2.
2. Mounted on Copper Pad area of 0.8x0.8" (20x20mm) per Fig.5.
3. 8.3ms single half sine-wave, or equivalent square wave, Duty cycle=4 pulses per minutes maximum.
Certified RoHS Compliant
UL File # E223026
MDE Semiconductor, Inc.
78-150 Calle Tampico, Unit 210, La Quinta, CA., USA 92253 Tel : 760-564-8656 • Fax : 760-564-2414
1-800-831-4881 Email: sales@mdesemiconductor.com Web: www.mdesemiconductor.com
ICTE5.0 to ICTE15C MPTE-5 to MPTE-45
1N6373 to 1N6381 and 1N6382 to 1N6389
GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR
STANDOFF VOLTAGE- 5.0 to 45.0V
1500 Watt Peak Power
MINIMUM
CLAMPING CLAMPING
VOLTAGE
(Vc) @
Ipp=1A
(Volts)
MAXIMUM
REVERSE
STANDOFF BREAKDOWN REVERSE
VOLTAGE
(VRWM)
(V)
MINIMUM
MAXIMUM
MAXIMUM
PEAK
PULSE
CURRENT
Ipp (A)
VOLTAGE
(Vc) @
Ipp=1A
(Volts)
VOLTAGE
VBR @ 1mA
(Volts)
LEAKAGE
IR @ Vr
(µA)
Part Numbers
ICTE-5* 1N6373 MPTE-5*
ICTE-8 1N6374 MPTE-8
ICTE-10 1N6375 MPTE-10
ICTE-12 1N6376 MPTE-12
ICTE-15 1N6377 MPTE-15
ICTE-18 1N6378 MPTE-18
ICTE-22 1N6379 MPTE-22
ICTE-36 1N6380 MPTE-36
ICTE-45 1N6381 MPTE-45
5*
8.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
300.0
25.0
2.0
2.0
2.0
2.0
2.0
2.0
2.0
7.1
11.3
13.7
16.1
20.1
24.2
29.8
50.6
63.3
7.5
11.5
14.1
16.5
20.6
25.2
32.0
54.3
70.0
160.0
100.0
90.0
70.0
60.0
50.0
40.0
23.0
19.0
6.0
9.4
11.7
14.1
17.6
21.2
25.9
42.4
52.9
ICTE-8C 1N6382 MPTE-8C
ICTE-10C 1N6383 MPTE-10C
ICTE-12C 1N6384 MPTE-12C
ICTE-15C 1N6385 MPTE-15C
ICTE-18C 1N6386 MPTE-18C
ICTE-22C 1N6387 MPTE-22C
ICTE-36C 1N6388 MPTE-36C
ICTE-45C 1N6389 MPTE-45C
8.0
9.4
50
2.0
2.0
2.0
2.0
2.0
2.0
2.0
11.4
14.1
16.7
20.8
24.8
30.8
50.6
63.3
11.6
14.5
17.1
21.4
25.5
32.0
54.3
70.0
100.0
90.0
70.0
60.0
50.0
40.0
23.0
19.0
10.0
12.0
15.0
18.0
22.0
36.0
45.0
11.7
14.1
17.6
21.2
25.9
42.4
52.9
*ICTE-5 is not available in Bi-directional. Suffix 'C' denotes Bi-directional device.
Certified RoHS Compliant
UL File # E223026
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