MLX92215LSE-ACA-000-RE [MELEXIS]
3-Wire Hall Effect Latch;
| 型号： | MLX92215LSE-ACA-000-RE |
| 厂家： | 
Melexis Microelectronic Systems |
| 描述： | 3-Wire Hall Effect Latch |
| 文件： | 总13页 (文件大小：872K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MLX92215-AAA
3-Wire Hall Effect Latch
Features and Benefits
Application Examples
Wide operating voltage range : from 2.7V to 24V
Chopper-stabilized amplifier stage
Built-in negative temperature coefficient
Reverse Supply Voltage Protection
Consumer and Industrial
Solid-state switch
E-Bike
Motorcycles
High ESD rating / Excellent EMC performance
3-phase BLDC motor commutation
Ordering Information
Part No.
MLX92215LUA-AAA-000-BU
MLX92215LSE-AAA-000-RE
Temperature Code
L (-40°C to 150°C)
L (-40°C to 150°C)
Package Code
UA (TO92-3L)
SE (TSOT-23)
Comment
BOP/BRP= ± 3mT, TC = -1100 ppm/°C
BOP/BRP= ± 3mT, TC = -1100 ppm/°C
Inverted output BOP/BRP= ± 3mT, TC =
-2000 ppm/°C
MLX92215LSE-ACA-000-RE
L (-40°C to 150°C)
SE (TSOT-23)
1 Functional Diagram
output driver, all in a single package. Based on the
existing platform, the magnetic core is using an improved
offset cancellation system allowing faster and more
accurate processing while being temperature insensitive
and stress independent. In addition is implemented a
negative temperature coefficient to compensate the
natural behaviour of magnets becoming weaker with rise
in temperature.
VDD
Voltage Regulator
with Reverse Polarity
Protection
Temperature
Bop/Brp
Compensation
reference
Switched
Hall
OUT
Open-Drain
Output
Plate
CDS
Amplifier
The included voltage regulator operates from 2.7 to 24V,
hence covering a wide range of applications. With the
built-in reverse voltage protection, a serial resistor or
diode on the supply line is not required so that even
remote sensors can be specified for low voltage operation
down to 2.7V while being reverse voltage tolerant.
Control
GND
2 General Description
With latching magnetic characteristics, the output is
turned low or high respectively with a sufficiently strong
South or North pole facing the package top side. When
removing the magnetic field, the device keeps its previous
state.
The Melexis MLX92215 is the second generation Hall-
effect latch designed in mixed signal CMOS technology.
The device integrates a voltage regulator, Hall sensor with
advanced offset cancellation system and an open-drain
390109221501
Rev. 001
Page 1 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
Table of Contents
1 Functional Diagram.................................................................................................................................................. 1
2 General Description ................................................................................................................................................. 1
Table of Contents........................................................................................................................................................ 2
3 Glossary of Terms..................................................................................................................................................... 3
4 Absolute Maximum Ratings ..................................................................................................................................... 3
5 General Electrical Specifications............................................................................................................................... 4
6 Magnetic Specifications ........................................................................................................................................... 5
6.1 MLX92215LSE-AAA-000....................................................................................................................................... 5
6.2 MLX92215LUA-AAA-000...................................................................................................................................... 5
7 Output Behaviour versus Magnetic Pole .................................................................................................................. 5
7.1 South Pole Active................................................................................................................................................. 5
8 Performance Graphs ................................................................................................................................................ 7
8.1 Magnetic parameters vs. TA................................................................................................................................. 7
8.2 Magnetic parameters vs. VDD .............................................................................................................................. 7
8.3 VDSon vs. TA ........................................................................................................................................................... 7
8.4 VDSon vs. VDD ......................................................................................................................................................... 7
8.5 IDD vs. TA ............................................................................................................................................................... 7
8.6 IDD vs. VDD ............................................................................................................................................................. 7
8.7 IOFF vs. TA .............................................................................................................................................................. 8
8.8 IOFF vs. VOUT........................................................................................................................................................... 8
8.9 SE Power Derating vs. TA ..................................................................................................................................... 8
8.10 UA Power Derating vs. TA .................................................................................................................................. 8
9 Application Information........................................................................................................................................... 9
9.1 Typical Three-Wire Application Circuit................................................................................................................ 9
10 Standard information regarding manufacturability of Melexis products with different soldering processes........ 10
11 ESD Precautions ................................................................................................................................................... 10
12 Packages .............................................................................................................................................................. 11
12.1 SE Package (TSOT-23) ...................................................................................................................................... 11
12.1 UA (TO92 - 3L) ................................................................................................................................................ 12
13 Disclaimer ............................................................................................................................................................ 13
390109221501
Rev. 001
Page 2 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
3 Glossary of Terms
MilliTesla (mT), Gauss
RoHS
Units of magnetic flux density: 1mT = 10 Gauss
Restriction of Hazardous Substances
TSOT
Thin Small Outline Transistor (TSOT package) – also referred with the Melexis package
code “SE”
ESD
Electro-Static Discharge
4 Absolute Maximum Ratings
Parameter
Supply Voltage (1, 2)
Supply Voltage (Load dump) (1, 3)
Supply Current (1, 2, 4)
Supply Current (1, 3, 4 )
Reverse Supply Voltage (1, 2)
Symbol
VDD
Value
+27
+32
+20
+50
-24
Units
V
VDD
V
IDD
mA
mA
V
IDD
VDDREV
Reverse Supply Voltage (Load
VDDREV
-30
V
dump)(1, 3)
Reverse Supply Current (1, 2, 5)
Reverse Supply Current (1, 3, 5)
IDDREV
-20
-50
mA
mA
V
IDDREV
(1, 2)
Output Voltage
VOUT
+27
Output Current (1, 2, 5)
Output Current (1, 3, 6)
IOUT
+20
mA
mA
V
IOUT
+75
Reverse Output Voltage (1)
Reverse Output Current (1, 2)
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature (7)
ESD Sensitivity – HBM (8)
ESD Sensitivity – MM (9)
ESD Sensitivity – CDM (10)
Magnetic Flux Density
VOUTREV
-0.5
IOUTREV
-50
mA
C
C
C
V
TA
TS
TJ
-
-40 to +150
-55 to +165
+165
4000
-
500
V
-
1000
V
B
Unlimited
mT
Exceeding the absolute maximum ratings may cause permanent damage. Exposure to absolute-maximum-rated conditions
for extended periods may affect device reliability.
1 The maximum junction temperature should not be exceeded
2 For maximum 1 hour
3 For maximum 0.5 s
4 Including current through protection device
5 Through protection device
6 For VOUT≤27V.
7 For 1000 hours.
8 Human Model according AEC-Q100-002 standard
9 Machine Model according AEC-Q100-003 standard
10 Charged Device Model according AEC-Q100-011 standard
390109221501
Rev. 001
Page 3 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
5 General Electrical Specifications
DC Operating Parameters TA = -40°C to 150°C, VDD = 2.7V to 24V (unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
2.7
1.5
Typ (1)
Max
24
4.5
1
Units
V
Supply Voltage
VDD
Operating
-
Supply Current
IDD
3.0
mA
mA
µA
Reverse Supply Current
Output Leakage Current
IDDREV
IOFF
VDD = -18V
VOUT = 12V, VDD = 12V, B < Brp
0.1
0.2
10
B > BOP, VDD = 3.8 to 18V, IOUT
20mA
=
Output Saturation Voltage
VDSon
tR
0.5
1
V
Output Rise Time (2)
(RPU dependent)
VDD = 12V, VPU(3) = 5V, RPU = 1kΩ
CLOAD = 50pF to GND
0.1
0.1
0.3
0.3
µs
µs
Output Fall Time (2)
(On-chip controlled)
VDD = 12V, VPU = 5V, RPU = 1kΩ
CLOAD = 50pF to GND
tF
1
Chopping Frequency
fCHOP
tPER
340
6
kHz
µs
Output Refresh Period (2)
Average over 1000 successive
switching events @10kHz, square
wave with B≥30mT, tRISE=tFALL≤20μs
Over 1000 successive switching
events @1kHz, square wave with
B≥30mT, tRISE=tFALL ≤100μs
B≥30mT and square wave magnetic
field
Delay time (2,4)
tD
6
µs
Output Jitter (p-p) (2, 5)
tJITTER
fSW
±3
50
µs
Maximum Switching Frequency
30
kHz
(2,6)
Power-On Time (7,8)
tON
VDD = 5V, dVDD/dt > 2V/us
Single layer (1S) Jedec board
Single layer (1S) Jedec board
16
35
μs
SE Package Thermal Resistance
RTH
RTH
300
200
°C/W
°C/W
UA Package Thermal Resistance
Table 1: Electrical specifications
1 Typical values are defined at TA = +25°C and VDD = 12V, unless otherwise specified
2 Guaranteed by design and verified by characterization, not production tested
3 RPU and VPU are respectively the external pull-up resistor and pull-up power supply
4 The Delay Time is the time from magnetic threshold reached to the start of the output switching
5 Output jitter is the unpredictable deviation of the Delay time
6 Maximum switching frequency corresponds to the maximum frequency of the applied magnetic field which is detected without loss of pulses
7 The Power-On Time represents the time from reaching VDD = VPOR to the first refresh of the output (first valid output state)
8 Power-On Slew Rate is not critical for the proper device start-up
390109221501
Rev. 001
Page 4 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
6 Magnetic Specifications
6.1 MLX92215LSE-AAA-000
DC Operating Parameters VDD = 3.8 to 24V, Ta = -40°C to 150°C
Operating Point
BOP (mT)
Release Point
TC
Test Condition
Active Pole
BRP (mT)
(ppm/oC)
Min
1
Typ(1)
3.2
3
Max
5
Min
-5
Typ(10)
-3.2
-3.0
-2.6
Max
-1
Typ(1)
TJ = -40°C
TJ = 25°C
TJ = 150°C
1
5
-5
-1
-1100
South Pole
0.5
2.6
5
-5
-0.5
6.2 MLX92215LUA-AAA-000
DC Operating Parameters VDD = 3.8 to 24V, Ta = -40°C to 150°C
Operating Point
BOP (mT)
Release Point
TC
Test Condition
Active Pole
BRP (mT)
(ppm/oC)
Min
1
Typ(1)
3.2
3
Max
5
Min
-5
Typ(10)
-3.2
-3.0
-2.6
Max
-1
Typ(1)
TJ = -40°C
TJ = 25°C
TJ = 150°C
1
5
-5
-1
-1100
South Pole
0.5
2.6
5
-5
-0.5
6.3 MLX92215LSE-ACA-000
DC Operating Parameters VDD = 3.8 to 24V, Ta = -40°C to 150°C
Operating Point
BOP (mT)
Release Point
TC
Test Condition
Active Pole
BRP (mT)
(ppm/oC)
Typ(1)
3.2
Typ(10)
-3.2
Typ(1)
Min
1.2
1.0
0.5
Max
5.5
4.7
4.2
Min
-5.5
-4.7
-4.2
Max
-1.2
-1.0
-0.5
TJ = -40°C
TJ = 25°C
TJ = 150°C
2.8
-2.8
-2000
North Pole
2.1
-2.1
7 Output Behaviour versus Magnetic Pole
7.1 South Pole Active
DC Operating Parameters TA = -40oC to 150oC, VDD = 2.7V to 24V (unless otherwise specified)
Parameter
South pole
North pole
Test Conditions
B > BOP
OUT
Low (VDSon
High (VPU) (2)
)
B < BRP
1 Typical values are defined at TA = +25°C and VDD = 12V, unless otherwise specified
2 Default Output state during power-up
390109221501
Rev. 001
Page 5 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
Table 2: Output behaviour versus magnetic pole (1)
1 Magnetic pole facing the branded/top side of the package
390109221501
Rev. 001
Page 6 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
8 Performance Graphs
8.1 Magnetic parameters vs. TA
8.2 Magnetic parameters vs. VDD
6
6
3
0
3
0
-3
-3
-6
Bop, Vdd= 2.7V
Bop, Vdd= 24V
Brp, Vdd= 2.7V
Brp, Vdd= 24V
Bop, Ta= 25oC
Brp, Ta= 25oC
Bop, Ta= 150oC
Brp, Ta= 150oC
-6
-40
-20
0
20
40
60
TA (oC)
80
100
120
140
160
2
6
10
14
18
22
26
VDD (Volts)
8.3 VDSon vs. TA
8.4 VDSon vs. VDD
0.5
0.4
0.3
0.2
0.1
0
0.5
0.4
0.3
0.2
0.1
0
VDD=2.7V
VDD=12V
VDD=24V
Ta = -40oC
Ta = 25oC
Ta = 150oC
-40
-20
0
20
40
60
80
100
120
140
160
2
6
10
14
18
22
26
Ta (oC)
VDD (Volts)
8.5 IDD vs. TA
8.6 IDD vs. VDD
4.5
4.5
3.5
2.5
1.5
3.5
2.5
1.5
VDD=2.7V
VDD=12V
VDD=24V
Ta = -40oC
Ta = 25oC
Ta = 150oC
-40
-20
0
20
40
60
Ta (oC)
80
100
120
140
160
2
6
10
14
18
22
26
VDD (Volts)
390109221501
Rev. 001
Page 7 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
8.7 IOFF vs. TA
8.8 IOFF vs. VOUT
10
10
VOUT=12V
VOUT=24V
Ta = -40oC
Ta = 25oC
Ta = 150oC
8
8
6
6
4
4
2
2
0
0
-40
-20
0
20
40
60
Ta (oC)
80
100
120
140
160
10
12
14
16
18
20
22
24
26
VOUT (Volts)
8.9 SE Power Derating vs. TA
8.10 UA Power Derating vs. TA
26
22
18
14
10
6
0.5
TSOT - Rth=300oC/W - PDmax=0.465W
UA(TO-92 3L)
0.4
.3
.2
0.1
0.0
2
-40
-20
0
20
40
60
80
100
120
140
160
180
-40
0
40
80
120
160
TA, [oC]
TA(°C)
390109221501
Rev. 001
Page 8 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
9 Application Information
9.1 Typical Three-Wire Application Circuit
Notes:
RPU
10k
1. For proper operation, a 10nF to 100nF bypass capacitor should
be placed as close as possible to the VDD and ground pin.
2. The pull-up resistor RPU value should be chosen in to limit the
current through the output pin below the maximum allowed
continuous current for the device.
3. A capacitor connected to the output is not obligatory, because
the output slope is generated internally.
MLX92215
VDD
C1
10nF
VCC
VOUT
OUT
GND
390109221501
Rev. 001
Page 9 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
10 Standard information regarding manufacturability of Melexis products with
different soldering processes
Our products are classified and qualified regarding soldering technology, solderability and moisture sensitivity level according
to following test methods:
Reflow Soldering SMD’s (Surface Mount Devices)
IPC/JEDEC J-STD-020
Moisture/Reflow Sensitivity Classification for Nonhermetic Solid State Surface Mount Devices
(classification reflow profiles according to table 5-2)
EIA/JEDEC JESD22-A113
Preconditioning of Nonhermetic Surface Mount Devices Prior to Reliability Testing
(reflow profiles according to table 2)
Wave Soldering SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EN60749-20
Resistance of plastic- encapsulated SMD’s to combined effect of moisture and soldering heat
EIA/JEDEC JESD22-B106 and EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Iron Soldering THD’s (Through Hole Devices)
EN60749-15
Resistance to soldering temperature for through-hole mounted devices
Solderability SMD’s (Surface Mount Devices) and THD’s (Through Hole Devices)
EIA/JEDEC JESD22-B102 and EN60749-21
Solderability
For all soldering technologies deviating from above mentioned standard conditions (regarding peak temperature,
temperature gradient, temperature profile etc) additional classification and qualification tests have to be agreed upon with
Melexis.
The application of Wave Soldering for SMD’s is allowed only after consulting Melexis regarding assurance of adhesive
strength between device and board.
Melexis is contributing to global environmental conservation by promoting lead free solutions. For more information on
qualifications of RoHS compliant products (RoHS = European directive on the Restriction Of the use of certain Hazardous
Substances) please visit the quality page on our website: http://www.melexis.com/quality.aspx
11 ESD Precautions
Electronic semiconductor products are sensitive to Electro Static Discharge (ESD).
Always observe Electro Static Discharge control procedures whenever handling semiconductor products.
390109221501
Rev. 001
Page 10 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
12 Packages
12.1 SE Package (TSOT-23)
Package Outline Drawing & Hall Plate Position
2.75 BSC
1.00 MAX
0.88+-0.023
SEATING PLANE
1.60 BSC
see note 2
+0.025
-0.050
0.075
Notes:
1. All dimensions are in millimeters
2. Outermost plastic extreme width does not include mold flash or
protrusions. Mold flash and protrusions shall not exceed
0.15mm per side.
3. Outermost plastic extreme length does not include mold flash
or protrusions. Mold flash and protrusions shall not exceed
0.25mm per side.
4. The lead width dimension does not include dambar protrusion.
Allowable dambar protrusion shall be 0.07mm total in excess
of the lead width dimension at maximum material condition.
5. Dimension is the length of terminal for soldering to a substrate.
0.50 BSC
TOP VIEW
6. Dimension on SECTION B-B’ applies to the flat section of the
SIDE VIEW
lead between 0.08mm and 0.15mm from the lead tip.
7. Formed lead shall be planar with respect to one another with
0.076mm at seating plane.
12° REF.
TYP.
BASE METAL
WITH PLATING
Marking:
0.10 R.
MIN.
Top side :11YY ; YY: Year (last 2 digits))
Bottom side: XXXX (XXXX: Lot Number (last 4 digits)
~
B’
0.35 +-0.1050
0.10 R.
MIN.
B
4°+/-4
SEATING PLANE
0.40+/-0.10
0.30
0.45
see note 5
0.575 REF.
SECTION B-B’
see note 6
END VIEW
1.45
Hall plate location
Notes:
0.275 TYP
1. All dimensions are in millimeters
Package line
TOP VIEW
END VIEW
Pin №
Name
Type
Function
1
2
3
VDD
OUT
GND
Supply
Output
Ground
Supply Voltage pin
Open Drain output pin
Ground pin
390109221501
Rev. 001
Page 11 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
12.1 UA (TO92 - 3L)
1.50+/-0.10
4.10+/-0.20
+0.10
+0.10
- 0.11
0.74
- 0.11
2.62
Notes:
7° Typ
7° Typ
1. All dimensions are in millimeters
2. Package dimension exclusive molding flash.
3. The end flash shall not exceed 0.127 mm on
the top side.
+0.03
- 0.03
0.46
0.00
0.15
Marking:
+0.11
0.55- 0.10
1st Line : xxx – last three digits from lot number
2nd Line : yww
y - last digit of year
ww - calendar week
0.38+/-0.03
0.38+/-0.03
1.27+/-0.055
2.54+/-0.055
45° NOM
7° NOM
Hall plate location
0.9
0.41
0.45
Notes:
1. All dimensions are in millimeters
Marked side
1
2
3
Pin №
Name
VDD
Type
Function
1
2
3
Supply
Ground
I/O
Supply Voltage pin
Ground pin
GND
TEST
Analog & Digital I/O
390109221501
Rev. 001
Page 12 of 13
www.melexis.com
Datasheet
NOV/14
MLX92215-AAA
3-Wire Hall Effect Latch
13 Disclaimer
Devices sold by Melexis are covered by the warranty and patent indemnification provisions appearing in its Term of Sale.
Melexis makes no warranty, express, statutory, implied, or by description regarding the information set forth herein or
regarding the freedom of the described devices from patent infringement. Melexis reserves the right to change specifications
and prices at any time and without notice. Therefore, prior to designing this product into a system, it is necessary to check
with Melexis for current information. This product is intended for use in normal commercial applications. Applications
requiring extended temperature range, unusual environmental requirements, or high reliability applications, such as military,
medical life-support or life-sustaining equipment are specifically not recommended without additional processing by Melexis
for each application.
The information furnished by Melexis is believed to be correct and accurate. However, Melexis shall not be liable to recipient
or any third party for any damages, including but not limited to personal injury, property damage, loss of profits, loss of use,
interrupt of business or indirect, special incidental or consequential damages, of any kind, in connection with or arising out of
the furnishing, performance or use of the technical data herein. No obligation or liability to recipient or any third party shall
arise or flow out of Melexis’ rendering of technical or other services.
© 2012 Melexis NV. All rights reserved.
For the latest version of this document, go to our website at
www.melexis.com
Or for additional information contact Melexis Direct:
Europe, Africa:
Phone: +32 1367 0495
Americas:
Asia:
Phone: +1 248-306-5400
E-mail: sales_usa@melexis.com
Phone: +32 1367 0495
E-mail: sales_asia@melexis.com
E-mail: sales_europe@melexis.com
ISO/TS 16949 and ISO14001 Certified
390109221501
Rev. 001
Page 13 of 13
www.melexis.com
Datasheet
NOV/14
相关型号：
©2020 ICPDF网 联系我们和版权申明