MDD1754RH [MGCHIP]
N-Channel Trench MOSFET, 40V, 20.5A, 27m(ohm);
| 型号： | MDD1754RH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel Trench MOSFET, 40V, 20.5A, 27m(ohm) |
| 文件： | 总6页 (文件大小：678K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Augꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
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ꢀ
ꢀ MDD1754ꢀ
NꢁChannelꢀTrenchꢀMOSFET,ꢀ40V,ꢀ20.5A,ꢀ27mꢂꢀ
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
Theꢀ MDD1754ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ Trenchꢀ
MOSFETꢀTechnologyꢀtoꢀprovidedꢀhighꢀperformanceꢀinꢀonꢁ
stateꢀresistance,ꢀswitchingꢀperformanceꢀandꢀreliability.ꢀ
ꢀꢀ
ꢀꢀ
ꢀꢀ
VDSꢀ=ꢀ40Vꢀ
ID=20.5A(VGS=10V)ꢀ
RDS(ON)ꢀ
ꢀ
<27mꢂꢀ@ꢀVGSꢀ=ꢀ10Vꢀ
<35mꢂꢀ@ꢀVGSꢀ=ꢀ4.5Vꢀ
Lowꢀ RDS(ON),ꢀ Lowꢀ Gateꢀ Chargeꢀ canꢀ beꢀ offeringꢀ superiorꢀ
benefitꢀinꢀtheꢀapplication.ꢀ
ꢀ
Applicationsꢀ
ꢀ
ꢀꢀ
ꢀꢀ
Invertersꢀ
Generalꢀpurposeꢀapplicationsꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
G
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(TCꢀ=25o)ꢀ
ꢀ ꢀ
Characteristicsꢀ
DrainꢁSourceꢀVoltageꢀ
Symbolꢀ
VDSS
VGSS
Ratingꢀ
40ꢀ
Unitꢀ
Vꢀ
ꢀ
GateꢁSourceꢀVoltageꢀ
ꢀ
±20ꢀ
Vꢀ
ꢀ TC=25oCꢀ
ꢀ TC=100oCꢀ
20.5ꢀ
13ꢀ
Aꢀ
ContinuousꢀDrainꢀCurrentꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ2)ꢀ
PulsedꢀDrainꢀCurrentꢀ
IDꢀ
IDM
PDꢀ
Aꢀ
ꢀ
50ꢀ
Aꢀ
ꢀ TC=25oCꢀ
16.7ꢀ
6.7ꢀ
PowerꢀDissipationꢀ
Wꢀ
ꢀ TC=100oCꢀ
SingleꢀPulseꢀAvalancheꢀEnergyꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ3)ꢀ
JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
EAS
ꢀ
18ꢀ
mJꢀ
oCꢀ
TJ,ꢀTstg
ꢀ
ꢁ55~+150ꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
RθJA
RθJC
Ratingꢀ
60ꢀ
Unitꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbientꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ (Noteꢀ1)ꢀ
ꢀ
oC/Wꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ
ꢀ
7.5ꢀ
ꢀ
1ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
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OrderingꢀInformationꢀ
ꢀ
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ꢀ
ꢀ
PartꢀNumberꢀ
Temp.ꢀRangeꢀ
Packageꢀ
Packingꢀ
RoHSꢀStatusꢀ
MDD1754RHꢀ
ꢁ55~150oCꢀ
TOꢁ252ꢀ
Tapeꢀ&ꢀReelꢀ
HalogenꢀFreeꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(TJꢀ=25oCꢀunlessꢀotherwiseꢀnoted)ꢀ
ꢀ
Characteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
StaticꢀCharacteristicsꢀ
DrainꢁSourceꢀBreakdownꢀVoltageꢀ
GateꢀThresholdꢀVoltageꢀ
BVDSS
VGS(th)
IDSS
IGSS
ꢀ
IDꢀ=ꢀ250ꢃA,ꢀVGSꢀ=ꢀ0Vꢀ
40ꢀ
ꢁꢀ
1.8ꢀ
ꢀ
ꢁꢀ
3.0ꢀ ꢀ
1ꢀ
Vꢀ
ꢀ
VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢃAꢀ
VDSꢀ=ꢀ32V,ꢀVGSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀ±20V,ꢀVDSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ8Aꢀ
VGSꢀ=ꢀ4.5V,ꢀIDꢀ=ꢀ6Aꢀ
VDSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ8Aꢀ
1.0ꢀ ꢀ
ZeroꢀGateꢀVoltageꢀDrainꢀCurrentꢀ
GateꢀLeakageꢀCurrentꢀ
ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢀ
ꢃAꢀ
ꢀ
ꢁꢀ
±0.1ꢀ
27ꢀ
35ꢀ
ꢁꢀ
20ꢀ
26ꢀ
20ꢀ
DrainꢁSourceꢀONꢀResistanceꢀ
RDS(ON)
ꢀ
mꢂꢀ
Sꢀ
ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
TotalꢀGateꢀChargeꢀ
gFS
ꢀ
ꢀ
Qgꢀ
Qgsꢀ
Qgdꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
9.2ꢀ
1.7ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
VDDꢀ=ꢀ28V,ꢀIDꢀ=ꢀ8A,ꢀVGSꢀ=ꢀ10Vꢀ
VDSꢀ=ꢀ25V,ꢀVGSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ
nCꢀ
pFꢀ
GateꢁSourceꢀChargeꢀ
GateꢁDrainꢀChargeꢀ
2.2ꢀ
InputꢀCapacitanceꢀ
Ciss
Crss
Coss
td(on)
trꢀ
td(off)
tfꢀ
ꢀ
ꢀ 440ꢀ
38ꢀ
ReverseꢀTransferꢀCapacitanceꢀ
OutputꢀCapacitanceꢀ
ꢀ
ꢀ
76ꢀ
TurnꢁOnꢀ ꢀ DelayꢀTimeꢀ
ꢀ
5.9ꢀ
TurnꢁOnꢀRiseꢀTimeꢀ
17.3ꢀ
16.5ꢀ
10.7ꢀ
VGSꢀ=ꢀ10Vꢀ,VDDꢀ=ꢀ20V,ꢀIDꢀ=ꢀ1A,ꢀ
RGEN=3.3ꢂꢀ
nsꢀ
TurnꢁOffꢀDelayꢀTimeꢀ
ꢀ
TurnꢁOffꢀFallꢀTimeꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ
ReverseꢀRecoveryꢀTimeꢀ
ReverseꢀRecoveryꢀChargeꢀ
VSD
ꢀ
ISꢀ=ꢀ8A,ꢀVGSꢀ=ꢀ0Vꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
0.86ꢀ
35ꢀ
1.2ꢀ
ꢁꢀ
Vꢀ
trrꢀ
nsꢀ
nCꢀ
ISꢀ=ꢀ8A,ꢀdi/dt=100A/usꢀ
Qrrꢀ
8.8ꢀ
ꢁꢀ
ꢀ
Notesꢀ:ꢀ
1.ꢀSurfaceꢀmountedꢀRF4ꢀboardꢀwithꢀ2oz.ꢀCopper.ꢀ ꢀ
2.ꢀPDꢀisꢀbasedꢀonꢀTJ(MAX)=150°Cꢀ ꢀ
PDꢀ(TC=25°C)ꢀisꢀbasedꢀonꢀRθJC,ꢀ
3.ꢀStartingꢀTJ=25°C,ꢀL=1mH,ꢀIAS=6AꢀVDD=20V,ꢀVGS=10Vꢀ ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ
ꢀ
60
50
40
30
20
10
25
20
15
10
5
4.5V
VGSꢀ=ꢀ10V
4.0V
8V
VGSꢀ=ꢀ4.5V
VGSꢀ=ꢀ10V
3.0V
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
5
10
15
20
25
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
ID,ꢀDrainꢀCurrentꢀ[A]
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
120
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀ=ꢀ8ꢀA
100
80
60
40
20
0
TAꢀ=ꢀ125℃
TAꢀ=ꢀ25℃
ꢁ50
ꢁ25
0
25
50
75
100
125
150
2
4
6
8
10
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
VGS,ꢀGateꢀtoꢀSourceꢀVolatgeꢀ[V]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀOnꢁResistanceꢀVariationꢀwithꢀ
GateꢀtoꢀSourceꢀVoltageꢀ
ꢀ
20
16
12
8
※ꢁNotesꢁ:
ꢀꢁꢁꢁꢁꢁVGSꢁ=ꢁ0V
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀVDSꢀ=ꢀ5V
101
TA=125℃
25℃
TA=125℃
25℃
ꢁ55℃
4
0
1.0
100
0.4
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0.6
0.8
1.0
1.2
1.4
VGS,ꢀGateꢁSourceꢀVoltageꢀ[V]
VSD,ꢀSourceꢁDrainꢀvoltageꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀVariationꢀ
withꢀSourceꢀCurrentꢀandꢀTemperatureꢀ
ꢀ
ꢀ
3ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢁ
ꢀ
ꢀ
ꢀ
800.0p
600.0p
400.0p
200.0p
0.0
10
8
C
issꢀ=ꢀC ꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
gs
Cossꢀ=ꢀCdsꢀ+ꢀC
※ꢁNoteꢁ:ꢁIDꢁ=ꢁ8A
gd
Crssꢀ=ꢀCgd
VDSꢁ=ꢁ28V
C
6
iss
4
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
2
C
oss
C
rss
0
0
2
4
6
8
10
12
102
101
0
10
20
30
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.7ꢁGateꢁChargeꢁCharacteristicsꢁ
Fig.8ꢁCapacitanceꢁCharacteristicsꢁ
ꢀ
103
102
101
100
10ꢁ1
10ꢁ2
24
20
16
12
8
OperationꢁinꢁThisꢁAreaꢁ
isꢁLimitedꢁbyꢁRꢁDS(on)
10ꢀµs
100ꢀµs
1ꢀms
10ꢀms
100ꢀms
DC
SingleꢁPulse
RthJC=7.5℃/W
TC=25℃
4
0
25
10ꢁ1
100
101
50
75
100
125
150
TC,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.10ꢁ Maximumꢁ Drainꢁ Currentꢁ vs.ꢁ Caseꢁ
Fig.9ꢁMaximumꢁSafeꢁOperatingꢁAreaꢁ
Temperatureꢁ
ꢀ
100
D=0.5
0.2
0.1
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTꢀ=ꢀPDMꢀ*ꢀZ ꢀ*ꢀR (t)ꢀ+ꢀTC
ꢀꢀꢀꢀꢀꢀRΘ JC=7.5℃/W
0.05
ꢁ1
10
J
θ
JC
θ JC
0.02
singleꢀpulse
0.01
ꢁ2
10
10
ꢁ4
ꢁ3
10
ꢁ2
10
ꢁ1
10
0
10
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
Fig.11ꢁTransientꢁThermalꢁResponseꢁCurveꢁ
ꢁ
ꢀ
4ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢁ
ꢀ
ꢀ
PhysicalꢁDimensions
ꢀ
ꢀ
ꢀ
2ꢁLeads,ꢁDPAKꢁ(TO252)ꢀ
ꢁ
ꢁ
Dimensionsꢁareꢁinꢁmillimetersꢁunlessꢁotherwiseꢁspecifiedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
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ꢀ
ꢀ
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ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
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ꢀ
ꢀ
ꢀ
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ꢀ
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ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
5ꢀ
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
Augꢀ2008.ꢀVersionꢀ1.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢁ
ꢁ
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Shinbashiꢀ2ꢁchomeꢀMTꢀbldgꢀ
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OsakaꢁOfficeꢁ ꢁ
891,ꢀDaechiꢁDong,ꢀKangnamꢁGuꢀ
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TheꢀProductsꢀareꢀnotꢀdesignedꢀforꢀuseꢀinꢀhostileꢀenvironments,ꢀincluding,ꢀwithoutꢀlimitation,ꢀaircraft,ꢀnuclearꢀpowerꢀ
generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀinꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ
expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ
applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ
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MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ
forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ
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