MDI5N40TH [MGCHIP]
N-Channel MOSFET 400V, 3.4 A, 1.6(ohm);
| 型号： | MDI5N40TH |
| 厂家： | 
MagnaChip |
| 描述： | N-Channel MOSFET 400V, 3.4 A, 1.6(ohm) |
| 文件： | 总7页 (文件大小：871K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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ꢀ MDI5N40/MDD5N40
ꢀ NꢁChannelꢀMOSFETꢀ400V,ꢀ3.4ꢀA,ꢀ1.6Ω
GeneralꢀDescriptionꢀ
Featuresꢀ
ꢀ
ꢀ
TheꢀMDI5N40ꢀ/ꢀMDD5N40ꢀuseꢀadvancedꢀ
Magnachip’sꢀMOSFETꢀTechnology,ꢀwhichꢀprovidesꢀ
lowꢀonꢁstateꢀresistance,ꢀhighꢀswitchingꢀperformanceꢀ
andꢀexcellentꢀquality.ꢀ
ꢀꢀVDSꢀ=ꢀ400Vꢀ
ꢀꢀIDꢀ=ꢀ3.4Aꢀ
ꢀꢀRDS(ON)ꢀꢀ ≤ꢀ1.6ꢀꢀ
ꢀ
ꢀ
@VGSꢀ=ꢀ10Vꢀ
@VGSꢀ=ꢀ10Vꢀ
ꢀ
MDI5N40ꢀisꢀsuitableꢀdeviceꢀforꢀSMPS,ꢀHIDꢀandꢀ
generalꢀpurposeꢀapplications.ꢀ
ꢀ
Applicationsꢀ
ꢀ
ꢀꢀPowerꢀSupplyꢀ
ꢀꢀPFCꢀ
ꢀꢀBallastꢀ
IꢁPAKꢀ
(TOꢁ251)ꢀ
ꢀ GꢀDꢀSꢀ
G
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25oC)ꢀ ꢀ
Characteristicsꢀ
ꢀ
Symbolꢀ
Ratingꢀ
Unitꢀ
Vꢀ
ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ
VDSS
ꢀ
400ꢀ
±30ꢀ
ꢀ ꢀ GateꢁSourceꢀVoltageꢀ
VGSS
ꢀ
Vꢀ
ꢀ TC=25oCꢀ
ꢀ TC=100oCꢀ
3.4ꢀ
Aꢀ
ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ
IDꢀ
2.15ꢀ
13.6ꢀ
45ꢀ
Aꢀ
ꢀ ꢀ PulsedꢀDrainꢀCurrent(1)
ꢀ ꢀ PowerꢀDissipationꢀ
ꢀ
IDM
ꢀ
Aꢀ
ꢀ TC=25oCꢀ
Derateꢀaboveꢀ25 oCꢀ
Wꢀ
PDꢀ
W/ oCꢀ
0.36ꢀ
4.5ꢀ
ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt(3)
ꢀ ꢀ RepetitiveꢀPulseꢀAvalancheꢀEnergy(4)
ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy(4)
ꢀ
Dv/dtꢀ
V/nsꢀ
mJꢀ
mJꢀ
oC
ꢀ
EAR
ꢀ
ꢀ
4.5ꢀ
ꢀ
EAS
170ꢀ
ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ
TJ,ꢀTstg
ꢀ
ꢁ55~150ꢀ
ꢀ
ꢀ
ꢀ
ThermalꢀCharacteristicsꢀ
Characteristicsꢀ
Symbolꢀ
Ratingꢀ
Unitꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient(1)
ꢀ
RθJA
ꢀ
110ꢀ
oC/Wꢀ
ThermalꢀResistance,ꢀJunctionꢁtoꢁCase(1)
ꢀ
RθJC
ꢀ
2.75ꢀ
ꢀ
ꢀ
1
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
OrderingꢀInformationꢀ
ꢀ
PartꢀNumberꢀ
Temp.ꢀRangeꢀ
ꢁ55~150oCꢀ
ꢁ55~150oCꢀ
Packageꢀ
TOꢁ251(IꢁPAK)ꢀ
DꢁPAKꢀ
Packingꢀ
Tubeꢀ
RoHSꢀStatusꢀ
HalogenꢀFreeꢀ
HalogenꢀFreeꢀ
MDI5N40THꢀ
MDD5N40RHꢀ
Reelꢀ
ꢀ
ꢀ
ElectricalꢀCharacteristicsꢀ(Taꢀ=25oC)ꢀ
Characteristicsꢀ
Symbolꢀ
TestꢀConditionꢀ
Minꢀ
Typꢀ
Maxꢀ
Unitꢀ
StaticꢀCharacteristicsꢀ
ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ
ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ
ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ
ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ
ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ
ꢀ ꢀ ForwardꢀTransconductanceꢀ
DynamicꢀCharacteristicsꢀ
ꢀ ꢀ TotalꢀGateꢀChargeꢀ
BVDSS
VGS(th)
IDSS
IGSS
ꢀ
ꢀ ꢀ IDꢀ=ꢀ250ꢂA,ꢀVGSꢀ=ꢀ0Vꢀ
400ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
5.0ꢀ
1ꢀ
Vꢀ
ꢀ
ꢀ ꢀ VDSꢀ=ꢀVGS,ꢀIDꢀ=ꢀ250ꢂAꢀ
ꢀ ꢀ VDSꢀ=ꢀ400V,ꢀVGSꢀ=ꢀ0Vꢀ
ꢀ ꢀ VGSꢀ=ꢀ±30V,ꢀVDSꢀ=ꢀ0Vꢀ
VGSꢀ=ꢀ10V,ꢀIDꢀ=ꢀ1.7Aꢀ
3.0ꢀ
ꢁꢀ
ꢀ
ꢁꢀ
ꢂAꢀ
nAꢀ
ꢃꢀ
ꢀ
ꢁꢀ
ꢁꢀ
100ꢀ
1.6ꢀ
ꢁꢀ
RDS(ON)
gfsꢀ
ꢀ
ꢀ
1.2ꢀ
2.0ꢀ
ꢀ ꢀ VDSꢀ=ꢀ30V,ꢀIDꢀ=ꢀ1.7Aꢀ
ꢁꢀ
Sꢀ
Qgꢀ
Qgsꢀ
Qgdꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
9ꢀ
2.5ꢀ
4ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ GateꢁSourceꢀChargeꢀ
ꢀ ꢀ GateꢁDrainꢀChargeꢀ
VDSꢀ=ꢀ320V,ꢀIDꢀ=ꢀ3.4A,ꢀVGSꢀ=ꢀ10V(3)
ꢀ
nCꢀ
pFꢀ
ꢀ ꢀ InputꢀCapacitanceꢀ
Ciss
ꢀ
290ꢀ
3ꢀ
ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ
ꢀ ꢀ OutputꢀCapacitanceꢀ
ꢀ ꢀ TurnꢁOnꢀ ꢀ DelayꢀTimeꢀ
ꢀ ꢀ RiseꢀTimeꢀ
Crss
ꢀ
ꢀ ꢀ VDSꢀ=ꢀ25V,ꢀVGSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ
Coss
td(on)
trꢀ
ꢀ
46ꢀ
12ꢀ
25ꢀ
20ꢀ
30ꢀ
ꢀ
VGSꢀ=ꢀ10V,ꢀVDSꢀ=ꢀ200V,ꢀIDꢀ=ꢀ3.4A,ꢀ
nsꢀ
RGꢀ=ꢀ25ꢃ(3)
ꢀ
ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ
ꢀ ꢀ FallꢀTimeꢀ
td(off)
ꢀ
tfꢀ
DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ
MaximumꢀContinuousꢀDrainꢀtoꢀSourceꢀ
DiodeꢀForwardꢀCurrentꢀ
ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀ
Voltageꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ
Timeꢀ
ISꢀ
VSD
trrꢀ
ꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
ꢁꢀ
3.4ꢀ
ꢀ
ꢁꢀ
Aꢀ
Vꢀ
ꢀ
ꢀ ꢀ ISꢀ=ꢀ3.4A,ꢀVGSꢀ=ꢀ0Vꢀ
1.4ꢀ
200ꢀ
1.0ꢀ
ꢀ
ꢀ
nsꢀ
ꢂCꢀ
ꢀ ꢀ IFꢀ=ꢀ3.4A,ꢀdi/dtꢀ=ꢀ100A/ꢂsꢀ
ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ
Chargeꢀ
Qrrꢀ
ꢀ
Noteꢀ:ꢀ
1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀRꢀθJCꢀ&ꢀRꢀθJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ
2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ ≤300us,ꢀdutyꢀcycle≤2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀTJ(MAX)=150°C.ꢀ
3.ꢀISDꢀ ≤3.4A,ꢀdi/dt≤200A/us,ꢀV =50V,ꢀR ꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ
DD
g
4.ꢀL=26.0mH,ꢀIAS=3.4A,ꢀVDD=50V,ꢀR ꢀ=25ꢃ,ꢀStartingꢀTJ=25°Cꢀ ꢀ
g
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
2
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
10
9
8
7
6
5
4
3
2
1
3.4
3.2
3.0
2.8
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
ꢀV =5.5V
gs
ꢀꢀꢀꢀꢀꢀ=6.0V
ꢀꢀꢀꢀꢀꢀ=6.5V
ꢀꢀꢀꢀꢀꢀ=7.0V
ꢀꢀꢀꢀꢀꢀ=8.0V
ꢀꢀꢀꢀꢀꢀ=10.0V
ꢀꢀꢀꢀꢀꢀ=15.0V
Notesꢀꢀ
ꢀ1.ꢀ250㎲ꢀPulseꢀTest
ꢀ2.ꢀT =25℃
C
V
GS=10.0V
VGS=20V
5
10
15
20
0
5
10
V ,DrainꢁSourceꢀVoltageꢀ[V]
ID,DrainꢀCurrentꢀ[A]
DS
Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ
DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ
Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ
ꢀ
ꢀ
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀꢀ=ꢀ250㎂
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ10ꢀV
ꢀꢀꢀ2.ꢀIDꢀꢀꢀ=ꢀ1.7ꢀA
1.1
1.0
0.9
0.8
ꢁ50
0
50
100
150
200
ꢁ50
0
50
100
150
200
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
TJ,ꢀJunctionꢀTemperatureꢀ[oC]
Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ
Temperatureꢀ
Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ
Temperatureꢀ
ꢀ
ꢀ
10
※ꢀNotesꢀ:
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀ250usꢀpulse
*ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVDS=30V
10
25℃
150℃
1
150℃
25℃
0.1
0.0
1
0.2
0.4
0.6
0.8
1.0
1.2
4
6
8
VSD,ꢀSourceꢁDrainꢀVoltageꢀ[V]
VGSꢀ[V]
Fig.5ꢀTransferꢀCharacteristicsꢀ
ꢀ
Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ
VariationꢀwithꢀSourceꢀCurrentꢀandꢀ
Temperatureꢀ
ꢀ
3
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
ꢀ
600
500
400
300
200
100
0
Cissꢀ=ꢀCgsꢀ+ꢀCgdꢀ(Cdsꢀ=ꢀshorted)
Cossꢀ=ꢀCdsꢀ+ꢀCgd
Crssꢀ=ꢀCgd
Coss
10
8
※ꢀNoteꢀ:ꢀIDꢀ=ꢀ5A
80V
200V
320V
Ciss
6
4
※ꢀNotesꢀ;
ꢀꢀꢀ1.ꢀVGSꢀ=ꢀ0ꢀV
ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz
Crss
2
0
1
10
0
2
4
6
8
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
QG,ꢀTotalꢀGateꢀChargeꢀ[nC]
Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ
Fig.8ꢀCapacitanceꢀCharacteristicsꢀ
ꢀ
102
OperationꢀinꢀThisꢀAreaꢀ
isꢀLimitedꢀbyꢀRꢀDS(on)
5
4
3
2
1
0
101
100
10ꢀµs
100ꢀµs
1ꢀms
DC
10ꢀms
100ꢀms
10ꢁ1
SingleꢀPulse
TJ=Maxꢀrated
TC=25℃
10ꢁ2
10ꢁ1
100
101
102
25
50
75
100
125
150
TC,ꢀCaseꢀTemperatureꢀ[℃]
VDS,ꢀDrainꢁSourceꢀVoltageꢀ[V]
Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ
Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ
Temperatureꢀ
ꢀ
ꢀ
5000
4000
3000
2000
1000
0
singleꢀPulse
D=0.5
0.2
RthJCꢀ=ꢀ2.75℃/W
TCꢀ=ꢀ25℃
100
0.1
0.05
ꢁ1
10
0.02
0.01
※ꢀNotesꢀ:
ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t1/t2
ꢀꢀꢀꢀꢀꢀPEAKꢀTJꢀ=ꢀPDMꢀ*ꢀZθ ꢀ*ꢀRθ (t)ꢀ+ꢀTC
JC
JC
ꢀꢀꢀꢀꢀꢀRΘ =2.75℃/W
JC
singleꢀpulse
10ꢁ3
ꢁ2
10
10ꢁ5
10ꢁ4
10ꢁ2
10ꢁ1
100
101
1Eꢁ5
1Eꢁ4
1Eꢁ3
0.01
0.1
1
10
t1,ꢀRectangularꢀPulseꢀDurationꢀ[sec]
PulseꢀWidthꢀ(s)
Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ
Dissipationꢀ
Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ
ꢀ
ꢀ
ꢀ
4
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
ꢀ
ꢀ
PhysicalꢀDimension
ꢀ
ꢀ
ꢀ
TOꢁ251ꢀ(IꢁPAK)ꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimeters,ꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
5
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
ꢀ
PhysicalꢀDimension
ꢀ
ꢀ
ꢀ
ꢀ
DꢁPAK,ꢀ3Lꢀ
ꢀ
Dimensionsꢀareꢀinꢀmillimeters,ꢀunlessꢀotherwiseꢀspecifiedꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
6
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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DISCLAIMER:ꢀ
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TheꢀProductsꢀareꢀnotꢀdesignedꢀforꢀuseꢀinꢀhostileꢀenvironments,ꢀincluding,ꢀwithoutꢀlimitation,ꢀaircraft,ꢀnuclearꢀpowerꢀ
generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀ inꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ
expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ
applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ
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MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ
forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ
SemiconductorꢀLtd.ꢀ
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7
Dec.ꢀ2011.ꢀVersionꢀ1.5ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.
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