MDP12N50 [MGCHIP]

N-Channel MOSFET 500V, 11.5 A, 0.65(ohm);


型号：	MDP12N50
厂家：	MagnaChip
描述：	N-Channel MOSFET 500V, 11.5 A, 0.65(ohm)
文件：	总6页 (文件大小：772K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

Augꢀ2009.ꢀVersionꢀ3.0ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ

ꢀ MDP12N50ꢀ^ꢀ

ꢀ

ꢀ NꢁChannelꢀMOSFETꢀ500V,ꢀ11.5ꢀA,ꢀ0.65Ωꢀ

GeneralꢀDescriptionꢀ

Featuresꢀ

ꢀ

Theꢀ MDP12N50ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ

Technology,ꢀ whichꢀ providesꢀ lowꢀ onꢁstateꢀ resistance,ꢀ highꢀ

ꢀꢀ

V_DSꢀ=ꢀ500Vꢀ

I_Dꢀ=ꢀ11.5Aꢀ

R_DS(ON)ꢀ≤ꢀ0.65ꢂꢀ

@ꢀV_GSꢀ=ꢀ10Vꢀ

switchingꢀperformanceꢀandꢀexcellentꢀquality.ꢀ

ꢀ

MDP12N50ꢀ isꢀ suitableꢀ deviceꢀ forꢀ SMPS,ꢀ highꢀ Speedꢀ

Applicationsꢀ

switchingꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ

ꢀ

ꢀꢀ

PowerꢀSupplyꢀ

PFCꢀ

HighꢀCurrent,ꢀHighꢀSpeedꢀSwitchingꢀ

ꢀ ꢀ ꢀ ꢀ

ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ

AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25^oC)ꢀ ꢀ

ꢀ

Characteristicsꢀ

Symbolꢀ

V_DSS

V_GSS

Ratingꢀ

500ꢀ

Unitꢀ

Vꢀ

ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ

ꢀ

ꢀ ꢀ GateꢁSourceꢀVoltageꢀ

ꢀ

±30ꢀ

Vꢀ

ꢀ T_C=25^oCꢀ

ꢀ T_C=100^oCꢀ

11.5ꢀ

7.0ꢀ

Aꢀ

ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ(※)ꢀ

I_Dꢀ

I_DM

P_Dꢀ

Aꢀ

ꢀ ꢀ PulsedꢀDrainꢀCurrent⁽¹⁾

ꢀ ꢀ PowerꢀDissipationꢀ

ꢀ

46ꢀ

Aꢀ

ꢀ T_C=25^oCꢀ

165ꢀ

Wꢀ

W/ ^oCꢀ

Derateꢀaboveꢀ25 ^oCꢀ

1.33ꢀ

4.5ꢀ

ꢀ ꢀ PeakꢀDiodeꢀRecoveryꢀdv/dt⁽³⁾

ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergy⁽⁴⁾

ꢀ

Dv/dtꢀ

E_AS

T_J,ꢀT_stg

V/nsꢀ

mJꢀ

^oC

ꢀ

460ꢀ

ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ

ꢀ

ꢁ55~150ꢀ

※ꢀ Idꢀlimitedꢀbyꢀmaximumꢀjunctionꢀtemperatureꢀ

ꢀ

ThermalꢀCharacteristicsꢀ

ꢀ

Characteristicsꢀ

ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbient⁽¹⁾

ThermalꢀResistance,ꢀJunctionꢁtoꢁCase⁽¹⁾

Symbolꢀ

R_θJA

R_θJC

Ratingꢀ

62.5ꢀ

Unitꢀ

ꢀ

^oC/Wꢀ

ꢀ

0.75ꢀ

ꢀ ꢀ ꢀ ꢀ

1ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

OrderingꢀInformationꢀ

ꢀ

PartꢀNumberꢀ

Temp.ꢀRangeꢀ

Packageꢀ

Packingꢀ

RoHSꢀStatusꢀ

MDP12N50THꢀ

ꢁ55~150^oCꢀ

TOꢁ220ꢀ

Tubeꢀ

HalogenꢀFreeꢀ

ꢀ

ElectricalꢀCharacteristicsꢀ(Taꢀ=25^oC)ꢀ

ꢀ

Characteristicsꢀ

StaticꢀCharacteristicsꢀ

ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ

ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ

ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ

ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ

ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ

ꢀ ꢀ ForwardꢀTransconductanceꢀ

DynamicꢀCharacteristicsꢀ

ꢀ ꢀ TotalꢀGateꢀChargeꢀ

Symbolꢀ

TestꢀConditionꢀ

Minꢀ

Typꢀ

Maxꢀ

Unitꢀ

BV_DSS

V_GS(th)

I_DSS

I_GSS

R_DS(ON)

g_fsꢀ

ꢀ

ꢀ ꢀ I_Dꢀ=ꢀ250ꢃA,ꢀV_GSꢀ=ꢀ0Vꢀ

500ꢀ

ꢁꢀ

5.0ꢀ

1ꢀ

Vꢀ

ꢀ

ꢀ ꢀ V_DSꢀ=ꢀV_GS,ꢀI_Dꢀ=ꢀ250ꢃAꢀ

ꢀ ꢀ V_DSꢀ=ꢀ500V,ꢀV_GSꢀ=ꢀ0Vꢀ

ꢀ ꢀ V_GSꢀ=ꢀ±30V,ꢀV_DSꢀ=ꢀ0Vꢀ

V_GSꢀ=ꢀ10V,ꢀI_Dꢀ=ꢀ5.75Aꢀ

ꢀ ꢀ V_DSꢀ=ꢀ30V,ꢀI_Dꢀ=ꢀ5.75Aꢀ

3.0ꢀ

ꢁꢀ

ꢀ

ꢁꢀ

ꢃAꢀ

nAꢀ

ꢂꢀ

ꢀ

ꢁꢀ

100ꢀ

0.65ꢀ

ꢁꢀ

ꢀ

0.55ꢀ

15ꢀ

ꢁꢀ

Sꢀ

Q_gꢀ

Q_gsꢀ

Q_gdꢀ

ꢁꢀ

22.7ꢀ

7.7ꢀ

8.7ꢀ

1030ꢀ

5ꢀ

ꢁꢀ

ꢀ

V_DSꢀ=ꢀ400V,ꢀI_Dꢀ=ꢀ11.5A,ꢀV_GSꢀ=ꢀ10V⁽³⁾

ꢀ

nCꢀ

pFꢀ

ꢀ ꢀ GateꢁSourceꢀChargeꢀ

ꢀ ꢀ GateꢁDrainꢀChargeꢀ

ꢀ ꢀ InputꢀCapacitanceꢀ

C_iss

C_rss

C_oss

t_d(on)

t_rꢀ

t_d(off)

t_fꢀ

ꢀ

ꢀ ꢀ V_DSꢀ=ꢀ25V,ꢀV_GSꢀ=ꢀ0V,ꢀfꢀ=ꢀ1.0MHzꢀ

ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ

ꢀ ꢀ OutputꢀCapacitanceꢀ

ꢀ ꢀ TurnꢁOnꢀDelayꢀTimeꢀ

ꢀ ꢀ RiseꢀTimeꢀ

ꢀ

121ꢀ

25ꢀ

ꢀ

50ꢀ

ꢀ

V_GSꢀ=ꢀ10V,ꢀV_DSꢀ=ꢀ250V,ꢀI_Dꢀ=ꢀ11.5A,ꢀ

nsꢀ

R_Gꢀ=ꢀ25ꢂ⁽³⁾

ꢀ

ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ

ꢀ ꢀ FallꢀTimeꢀ

ꢀ

40ꢀ

ꢀ

30ꢀ

ꢀ

DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ

MaximumꢀContinuousꢀDrainꢀtoꢀ ꢀ

SourceꢀDiodeꢀForwardꢀCurrentꢀ

SourceꢁDrainꢀDiodeꢀForwardꢀ

I_Sꢀ

ꢀ

ꢁꢀ

11.5ꢀ

ꢀ

ꢁꢀ

Aꢀ

Vꢀ

V_SD

ꢀ

ꢀ ꢀ I_Sꢀ=ꢀ11.5A,ꢀV_GSꢀ=ꢀ0Vꢀ

1.4ꢀ

Voltageꢀ

ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ

Timeꢀ

ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀ

Chargeꢀ

t_rrꢀ

310ꢀ

2.6ꢀ

ꢀ

nsꢀ

ꢃCꢀ

ꢀ ꢀ I_Fꢀ=ꢀ11.5A,ꢀdl/dtꢀ=ꢀ100A/ꢃs⁽³⁾

ꢀ

Q_rrꢀ

ꢀ

Noteꢀ:ꢀ

1.ꢀPulseꢀwidthꢀisꢀbasedꢀonꢀR_θJCꢀ&ꢀR_θJAꢀandꢀtheꢀmaximumꢀallowedꢀjunctionꢀtemperatureꢀofꢀ150°C.ꢀ

2.ꢀPulseꢀtest:ꢀpulseꢀwidthꢀ ≤300us,ꢀdutyꢀcycle≤2%,ꢀpulseꢀwidthꢀlimitedꢀbyꢀjunctionꢀtemperatureꢀT_J(MAX)=150°C.ꢀ

3.ꢀI_SDꢀ≤11.5A,ꢀdi/dt≤200A/us,ꢀV =50V,ꢀR ꢀ=25ꢂ,ꢀStartingꢀT_J=25°Cꢀ

4.ꢀL=6.3mH,ꢀI_AS=11.5A,ꢀV_DD=50V,ꢀR ꢀ=25ꢂ,ꢀStartingꢀT_J=25°Cꢀ ꢀ

ꢀ

2ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

1.0

0.9

0.8

0.7

0.6

0.5

0.4

ꢀV =5.5V

ꢀꢀꢀꢀꢀꢀ=6.0V

10 ꢀꢀꢀꢀꢀꢀ=6.5V

ꢀꢀꢀꢀꢀꢀ=7.0V

ꢀꢀꢀꢀꢀꢀ=8.0V

ꢀꢀꢀꢀꢀꢀ=10.0V

_GS=20V

_GS=10.0V

Notesꢀꢀ

ꢀ1.ꢀ250㎲ꢀPulseꢀTest

ꢀ2.ꢀT =25℃

0.1

V ,DrainꢁSourceꢀVoltageꢀ[V]

I_D,DrainꢀCurrentꢀ[A]

Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ

DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ

Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ

ꢀ

1.2

1.8

1.6

1.4

1.2

1.0

0.8

0.6

※ꢀNotesꢀ:

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ0ꢀV

ꢀꢀꢀ2.ꢀI_Dꢀꢀꢀꢀ=ꢀ250㎂

※ꢀNotesꢀ:

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ10ꢀV

ꢀꢀꢀ2.ꢀI_Dꢀ=ꢀ5ꢀA

1.1

1.0

0.9

0.8

V_GS=10V

V_GS=4.5V

ꢁ50

100

150

200

ꢁ50

ꢁ25

100

125

150

T_J,ꢀJunctionꢀTemperatureꢀ[^oC]

Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ

Temperatureꢀ

ꢀ

Fig.4ꢀ Breakdownꢀ Voltageꢀ Variationꢀ vs.ꢀ

Temperatureꢀ

ꢀ

100

※ꢀNotesꢀ:

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ0ꢀV

ꢀꢀꢀ2.ꢀI_Dꢀꢀꢀꢀ=ꢀ250㎂

*ꢀNotesꢀ;

ꢀꢀꢀ1.ꢀV_DS=5V

125℃

25℃

125℃

0.1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

V_SD,ꢀSourceꢁDrainꢀVoltageꢀ[V]

V_GSꢀ[V]

Fig.5ꢀTransferꢀCharacteristicsꢀ

ꢀ

Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ

VariationꢀwithꢀSourceꢀCurrentꢀandꢀ

Temperatureꢀ

ꢀ

3ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

2000

1800

1600

1400

1200

1000

800

C_issꢀ=ꢀC_gsꢀ+ꢀC_gdꢀ(C_dsꢀ=ꢀshorted)

C_ossꢀ=ꢀC_dsꢀ+ꢀC_gd

C_rssꢀ=ꢀC_gd

C_oss

※ꢀNoteꢀ:ꢀI_Dꢀ=ꢀ11.5A

100V

250V

400V

C_iss

※ꢀNotesꢀ;

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ0ꢀV

ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz

600

400

200

C_rss

0.1

Q_G,ꢀTotalꢀGateꢀChargeꢀ[nC]

V_DS,ꢀDrainꢁSourceꢀVoltageꢀ[V]

Fig.7ꢀGateꢀChargeꢀCharacteristicsꢀ

Fig.8ꢀCapacitanceꢀCharacteristicsꢀ

ꢀ

10²

OperationꢀinꢀThisꢀAreaꢀ

isꢀLimitedꢀbyꢀRꢀ_DS(on)

10ꢀµs

100ꢀµs

1ꢀms

10ꢀms

100ꢀms

10¹

10⁰

10^ꢁ1

10^ꢁ2

SingleꢀPulse

T_J=Maxꢀrated

T_C=25℃

10^ꢁ1

10⁰

10¹

10²

100

125

150

T_C,ꢀCaseꢀTemperatureꢀ[℃]

V_DS,ꢀDrainꢁSourceꢀVoltageꢀ[V]

Fig.9ꢀMaximumꢀSafeꢀOperatingꢀAreaꢀ

Fig.10ꢀMaximumꢀDrainꢀCurrentꢀvs.ꢀCaseꢀ

Temperatureꢀ

ꢀ

10⁰

10^ꢁ1

10^ꢁ2

15000

12000

9000

6000

3000

singleꢀPulse

R_thJCꢀ=ꢀ0.75℃/W

T_Cꢀ=ꢀ25℃

D=0.5

0.2

0.1

0.05

※ꢀNotesꢀ:

ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t₁/t₂

ꢀꢀꢀꢀꢀꢀPEAKꢀT_Jꢀ=ꢀP_DMꢀ*ꢀZ_θꢀ*ꢀR_θ(t)ꢀ+ꢀT_C

0.02

0.01

ꢀꢀꢀꢀꢀꢀR_Θ=0.75℃/W

singleꢀpulse

10^ꢁ3

10^ꢁ5

10^ꢁ4

10^ꢁ2

10^ꢁ1

10⁰

10¹

1Eꢁ5

1Eꢁ4

1Eꢁ3

0.01

0.1

t₁,ꢀRectangularꢀPulseꢀDurationꢀ[sec]

PulseꢀWidthꢀ(s)

Fig.12ꢀSingleꢀPulseꢀMaximumꢀPowerꢀ

Dissipationꢀ

Fig.11ꢀTransientꢀThermalꢀResponseꢀCurveꢀ

ꢀ

4ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

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TO220,ꢀ3Lꢀ

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Dimensionsꢀareꢀinꢀmillimeters,ꢀunlessꢀotherwiseꢀspecifiedꢀ

ꢀ

5ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

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generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀinꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ

expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ

applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ

ꢀ

\ꢀ

ꢀ

MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ

forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ

SemiconductorꢀLtd.ꢀ

ꢀ

6ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

MDP12N50 [MGCHIP]

相关型号：

SI9130DB

SI9135LG-T1

SI9135LG-T1-E3

SI9135_11

SI9136_11

SI9130CG-T1-E3

SI9130LG-T1-E3

SI9130_11

SI9137

SI9137DB

SI9137LG

SI9122E