MDP13N50GTH [MGCHIP]
N-Channel MOSFET 500V, 13.0A, 0.5(ohm);型号: | MDP13N50GTH |
厂家: | MagnaChip |
描述: | N-Channel MOSFET 500V, 13.0A, 0.5(ohm) |
文件: | 总8页 (文件大小:1506K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
MDP13N50G / MDF13N50G
N-Channel MOSFET 500V, 13.0A, 0.5Ω
General Description
Features
VDS = 500V
VDS = 550V @ Tjmax
ID = 13.0A @ VGS = 10V
RDS(ON) < 0.5Ω @ VGS = 10V
These N-channel MOSFET are produced using advanced
MagnaChip’s MOSFET Technology, which provides low on-
state resistance, high switching performance and excellent
quality.
These devices are suitable device for SMPS, high Speed
switching and general purpose applications.
Applications
Power Supply
HID
Lighting
G
TO-220
TO-220F
MDP Series
MDF Series
S
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Symbol
VDSS
MDP13N50G
MDF13N50G
Unit
V
Drain-Source Voltage
500
550
±30
Drain-Source Voltage @ Tjmax
Gate-Source Voltage
VDSS @ Tjmax
VGSS
V
V
TC=25oC
13
8.2
52
13*
8.2*
52*
42
A
Continuous Drain Current
Pulsed Drain Current(1)
Power Dissipation
ID
TC=100oC
A
IDM
PD
A
TC=25oC
187
1.49
W
W/ oC
Derate above 25 oC
0.33
Repetitive Avalanche Energy(1)
Peak Diode Recovery dv/dt(3)
Single Pulse Avalanche Energy(4)
EAR
dv/dt
EAS
18.7
4.5
mJ
V/ns
mJ
580
Junction and Storage Temperature Range
* Id limited by maximum junction temperature
TJ, Tstg
-55~150
oC
Thermal Characteristics
Characteristics
Symbol
RθJA
MDP13N50G MDF13N50G
Unit
oC/W
Thermal Resistance, Junction-to-Ambient(1)
Thermal Resistance, Junction-to-Case(1)
62.5
0.67
62.5
3.0
RθJC
1
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
MDP13N50GTH
MDF13N50GTH
Temp. Range
-55~150oC
Package
TO-220
Packing
Tube
RoHS Status
Halogen Free
Halogen Free
-55~150oC
TO-220F
Tube
Electrical Characteristics (Ta =25oC)
Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Static Characteristics
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
Gate Leakage Current
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 500V, VGS = 0V
VGS = ±30V, VDS = 0V
VGS = 10V, ID = 6.5A
VDS = 40V, ID = 6.5A
500
-
-
5.0
1
V
-
-
3.0
-
-
μA
nA
Ω
IGSS
-
100
0.5
-
RDS(ON)
gfs
0.39
13
-
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
33
10.4
13
Gate-Source Charge
Gate-Drain Charge
VDS = 400V, ID = 13A, VGS = 10V(3)
VDS = 25V, VGS = 0V, f = 1.0MHz
nC
Input Capacitance
1390
6.3
173
57
Reverse Transfer Capacitance
Output Capacitance
Turn-On Delay Time
Rise Time
pF
54
VGS = 10V, VDS = 250V, ID = 13A,
ns
RG = 25Ω(3)
Turn-Off Delay Time
Fall Time
td(off)
tf
112
37
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to Source
Diode Forward Current
Source-Drain Diode Forward
Voltage
Body Diode Reverse Recovery
Time
Body Diode Reverse Recovery
IS
-
-
-
-
13
-
A
V
VSD
IS = 13A, VGS = 0V
1.4
trr
325
2.9
ns
μC
IF = 13A, dl/dt = 100A/μs(3)
Qrr
Charge
Note :
1. Pulse width is based on R θJC & R θJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤9.0A, di/dt≤200A/us, V =50V, R =25Ω, Starting TJ=25°C
DD
g
4. L=6.2mH, IAS=13.0A, VDD=50V, , R =25Ω, Starting TJ=25°C
g
2
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
30
25
20
15
10
5
0.9
0.8
0.7
0.6
0.5
0.4
Vgs=5.5V
=6.0V
=6.5V
=7.0V
=8.0V
=10.0V
VGS=10.0V
VGS=20V
Notes
1. 250㎲ Pulse Test
2. TC=25℃
5
10
15
20
5
10
15
20
25
30
35
VDS,Drain-Source Voltage [V]
ID,Drain Current [A]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
1.2
3.0
2.5
2.0
1.5
1.0
0.5
0.0
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
※ Notes :
1. VGS = 10 V
2. ID = 6.5A
1.1
1.0
0.9
0.8
-50
0
50
100
150
200
-50
0
50
100
150
200
TJ, Junction Temperature [oC]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 Breakdown Voltage Variation vs.
Temperature
100
※ Notes :
1. VGS = 0 V
2. ID = 250㎂
* Notes ;
1. VDS=30V
150℃
10
10
25℃
1
150℃
25℃
-55℃
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
VSD, Source-Drain Voltage [V]
4
5
6
7
8
VGS [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
3000
2800
2600
2400
2200
2000
1800
1600
1400
1200
1000
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Coss
※ Note : ID = 13.0A
10
8
100V
250V
Crss = Cgd
400V
Ciss
6
4
※ Notes ;
1. VGS = 0 V
2. f = 1 MHz
Crss
600
2
400
200
0
0
0.1
0
5
10
15
20
25
30
35
40
1
10
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
102
102
101
100
10-1
10-2
10 s
10 s
Operation in This Area
is Limited by R DS(on)
Operation in This Area
is Limited by R DS(on)
100 s
1 ms
10 ms
100 s
1 ms
10 ms
101
100
100 ms
100 ms
DC
DC
10-1
Single Pulse
TJ=Max rated
TC=25℃
Single Pulse
TJ=Max rated
TC=25℃
10-2
10-1
100
101
102
10-1
100
101
102
VDS, Drain-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Safe Operating Area
MDF13N50G(TO-220F)
Fig.9 Maximum Safe Operating Area
MDP13N50G(TO-220)
100
10-1
10-2
100
10-1
10-2
D=0.5
0.2
D=0.5
0.2
0.1
0.1
0.05
0.05
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
JC
JC
RΘ =0.67℃/W
RΘ =3.0℃/W
JC
JC
single pulse
10-3
single pulse
10-3
10-5
10-4
10-2
10-1
100
101
10-5
10-4
10-2
10-1
100
101
t1, Rectangular Pulse Duration [sec]
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response Curve
MDP13N50G(TO-220)
Fig.12 Transient Thermal Response Curve
MDF13N50G(TO-220F)
4
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
14000
12000
10000
8000
6000
4000
2000
0
24000
22000
20000
18000
16000
14000
12000
10000
8000
6000
4000
2000
0
single Pulse
RthJC = 0.67℃/W
TC = 25℃
single Pulse
RthJC = 3.0℃/W
TC = 25℃
1E-5
1E-4
1E-3
0.01
0.1
1
10
1E-5
1E-4
1E-3
0.01
0.1
1
10
Pulse Width (s)
Pulse Width (s)
Fig.13 Single Pulse Maximum Power
Dissipation MDP13N50G(TO-220)
Fig.14 Single Pulse Maximum Power
DissipationMDF13N50G (TO-220F)
14
12
10
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [℃]
Fig.15 Maximum Drain Current vs. Case
Temperature
5
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
6
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
Physical Dimension
3 Leads, TO-220F
Dimensions are in millimeters unless otherwise specified
Symbol
Min
4.50
0.63
1.15
0.33
15.47
9.60
Nom
Max
4.93
0.91
1.47
0.63
A
b
b1
C
D
E
16.13
10.71
e
2.54
F
G
L
L1
Q
2.34
6.48
12.24
2.79
2.52
3.10
3.00
2.84
6.90
13.72
3.67
2.96
3.50
3.55
Q1
¢R
7
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
8
Dec. 2014. Version 1.6
MagnaChip Semiconductor Ltd.
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