MDP1921 [MGCHIP]
Single N-channel Trench MOSFET 100V, 120A, 4.5m(ohm);
| 型号： | MDP1921 |
| 厂家： | 
MagnaChip |
| 描述： | Single N-channel Trench MOSFET 100V, 120A, 4.5m(ohm) |
| 文件： | 总6页 (文件大小：1104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDP1921
Single N-channel Trench MOSFET 100V, 120A, 4.5mΩ
General Description
Features
The MDP1921 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDP1921 is suitable device for DC/DC Converter
and general purpose applications.
VDS = 100V
ID = 120A @VGS = 10V
RDS(ON)
< 4.5 mΩ @VGS = 10V
100% UIL Tested
100% Rg Tested
G
S
TO-220
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
Rating
100
Unit
V
VDSS
VGSS
Gate-Source Voltage
±20
V
TC=25oC (Silicon Limited)
153
Continuous Drain Current (1)
TC=25oC (Package Limited)
TC=100oC
ID
120
A
97
Pulsed Drain Current
IDM
480
TC=25oC
223
Power Dissipation
PD
W
TC=100oC
89
Single Pulse Avalanche Energy (2)
EAS
609
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
Rating
62.5
Unit
oC/W
RθJC
0.56
1
Jun. 2013. Version 1.2
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDP1921TH
-55~150oC
TO-220
Tube
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 80V, VGS = 0V
VGS = ±20V, VDS = 0V
VGS = 10V, ID = 50A
VDS = 10V, ID = 50A
100
-
2.9
-
-
V
2.0
4.0
1.0
±0.1
4.5
-
-
-
-
-
μA
Gate Leakage Current
IGSS
-
Drain-Source ON Resistance
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
RDS(ON)
gfs
3.8
120
mΩ
S
Qg
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
100
27
-
-
-
-
-
-
-
-
-
-
-
VDS = 50V, ID = 50A,
VGS = 10V
Gate-Source Charge
nC
pF
Gate-Drain Charge
26
Input Capacitance
6750
50
VDS = 40V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
1300
30.4
28.8
93.0
34.2
2.5
Turn-On Delay Time
Rise Time
VGS = 10V, VDS = 50V,
ID = 50A , RG = 3.0Ω
ns
Turn-Off Delay Time
td(off)
tf
Fall Time
Gate Resistance
Rg
f=1 MHz
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 50A, VGS = 0V
-
-
-
0.9
73
1.2
V
ns
nC
IF = 50A, dl/dt = 100A/μs
Qrr
150
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 1.0mH, IAS = 28.0A, VGS = 10V.
2
Jun. 2013. Version 1.2
MagnaChip Semiconductor Ltd.
4.1
4.0
3.9
3.8
3.7
3.6
3.5
200
180
160
140
120
100
80
6.0V
7.0V
8.0V
5.0V
VGS = 10V
VGS = 10V
4.5V
4.0V
60
40
20
0
50
100
150
200
0
0
1
2
3
4
5
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
20
18
16
14
12
10
8
2.5
※ Notes :
1. VGS = 10 V
2. ID = 50 A
※ Notes :
ID = 50A
2.0
1.5
1.0
0.5
0.0
TA = 25
℃
6
4
2
0
2
3
4
5
6
7
8
9
10
-50
-25
0
25
50
75
100
125
150
VGS, Gate to Source Volatge [V]
TJ, Junction Temperature [oC]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
100
90
80
70
60
50
40
30
20
10
0
※ Notes :
VGS = 0V
※ Notes :
100
10
1
VDS = 10V
TA=25
℃
TA=25
℃
0.0
0.3
0.6
0.9
1.2
1.5
0
1
2
3
4
5
6
7
8
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Jun. 2013. Version 1.2
MagnaChip Semiconductor Ltd.
10000
8000
6000
4000
2000
0
10
8
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
※ Note : ID = 50A
VDS = 50V
Crss = Cgd
Ciss
6
※ Notes ;
Coss
1. VGS = 0 V
2. f = 1 MHz
4
Crss
2
0
0
5
10
15
20
25
30
0
10
20
30
40
50
60
70
80
90
100
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
180
160
140
120
100
80
103
102
101
100
10-1
100 us
1 ms
Operation in This Area
is Limited by R DS(on)
10 ms
1s
DC
60
40
Single Pulse
TJ=Max rated
20
TC=25
℃
0
10-1
100
101
102
25
50
75
100
125
150
TC, Case Temperature [ ]
℃
VDS, Drain-Source Voltage [V]
Fig.10 Maximum Drain Current vs.
Case Temperature
Fig.9 Maximum Safe Operating Area
100
10-1
10-2
10-3
10-4
10-5
D=0.5
0.2
0.1
0.05
0.02
0.01
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
single pulse
JC
10-5
10-4
10-3
10-2
10-1
100
101
102
t1, Rectangular Pulse Duration [sec]
Fig.11 Transient Thermal Response
Curve
4
Jun. 2013. Version 1.2
MagnaChip Semiconductor Ltd.
Package Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
5
Jun. 2013. Version 1.2
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Jun. 2013. Version 1.2
MagnaChip Semiconductor Ltd.
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