MDS1101URH [MGCHIP]
Single N-channel Trench MOSFET 12V, 15A, 8m(ohm);
| 型号： | MDS1101URH |
| 厂家： | 
MagnaChip |
| 描述： | Single N-channel Trench MOSFET 12V, 15A, 8m(ohm) |
| 文件： | 总6页 (文件大小：1088K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MDS1101
Single N-channel Trench MOSFET 12V, 15A, 8mΩ
General Description
Features
The MDS1101 uses advanced MagnaChip’s MOSFET
Technology, which provides high performance in on-state
resistance, fast switching performance and excellent
quality. MDS1101 is suitable device for DC/DC Converter
and general purpose applications.
VDS = 12V
ID = 15A @VGS = 4.5V
RDS(ON)
< 8.0 mΩ @VGS = 4.5V
100% UIL Tested
100% Rg Tested
D
5(D)
6(D)
7(D)
8(D)
G
4(G)
3(S)
2(S)
S
1(S)
8 Leads, SOIC
Absolute Maximum Ratings (Ta = 25oC)
Characteristics
Drain-Source Voltage
Symbol
Rating
12
Unit
V
VDSS
VGSS
Gate-Source Voltage
±12
15
V
TA=25oC
TA=70oC
Continuous Drain Current (1)
ID
A
12
Pulsed Drain Current
IDM
PD
78
TA=25oC
TA=70oC
2.5
Power Dissipation
W
1.6
Single Pulse Avalanche Energy(2)
EAS
31
mJ
oC
Junction and Storage Temperature Range
TJ, Tstg
-55~150
Thermal Characteristics
Characteristics
Thermal Resistance, Junction-to-Ambient (1)
Thermal Resistance, Junction-to-Case
Symbol
RθJA
Rating
50
Unit
oC/W
RθJC
25
1
Apr. 2016. Ver. 1.0
MagnaChip Semiconductor Ltd.
Ordering Information
Part Number
Temp. Range
Package
Packing
RoHS Status
MDS1101URH
-55~150oC
SOIC-8
Tape & Reel
Halogen Free
Electrical Characteristics (TJ =25oC)
Characteristics
Static Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Drain Cut-Off Current
BVDSS
VGS(th)
IDSS
ID = 250μA, VGS = 0V
VDS = VGS, ID = 250μA
VDS = 12V, VGS = 0V
VGS = ±12V, VDS = 0V
VGS = 4.5V, ID = 15A
VGS = 2.8V, ID = 12A
VDS = 6V, ID = 12A
12
0.6
-
-
-
1.9
1
V
-
-
uA
nA
Gate Leakage Current
IGSS
-
-
±200
8.0
30
-
-
4.1
6.4
-
Drain-Source ON Resistance
RDS(ON)
gfs
mΩ
-
Forward Transconductance
Dynamic Characteristics
Total Gate Charge
85
S
Qg(4.5V)
Qgs
Qgd
Ciss
Crss
Coss
td(on)
tr
23
6.8
VDD = 10V, ID = 12A,
VGS = 4.5V
Gate-Source Charge
-
-
nC
pF
Gate-Drain Charge
-
3.9
-
Input Capacitance
-
3,900
250
1,634
15
-
VDS = 6V, VGS = 0V,
f = 1.0MHz
Reverse Transfer Capacitance
Output Capacitance
-
-
-
-
Turn-On Delay Time
-
-
Rise Time
-
-
11
-
-
VGS = 4.5V, VDD = 6.0V,
ID = 12A, RG =18Ω,
ns
Turn-Off Delay Time
td(off)
tf
43
Fall Time
-
12
-
Gate Resistance
Rg
f=1 MHz
0.5
1.0
2.0
Ω
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
VSD
trr
IS = 1A, VGS = 0V
-
-
-
0.6
38
64
1.0
V
-
-
ns
nC
IF = 12A, dl/dt = 100A/μs
Qrr
Note :
1. Surface mounted FR-4 board by JEDEC (jesd51-7). Continuous current at TC=25℃ is silicon limited
2. EAS is tested at starting Tj = 25℃, L = 0.1mH, IAS = 25 A, VDD = 27V, VGS = 10V
2
Apr. 2016. Ver. 1.0
MagnaChip Semiconductor Ltd.
50
VGS = 10V
20
15
10
5
2.8V
4.5V
3.0V
40
30
20
10
0
VGS = 2.8V
2.5V
VGS = 4.5V
0
0
20
40
0.0
0.5
1.0
1.5
2.0
ID, Drain Current [A]
VDS, Drain-Source Voltage [V]
Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage
Fig.1 On-Region Characteristics
20
15
10
5
1.8
* Notes :
1. VGS = 10 V
* Notes :
ID = 12.0A
2. ID = 11 A
1.6
1.4
1.2
1.0
0.8
0.6
0
-50
-25
0
25
50
75
100
125
150
2
3
4
5
6
7
8
9
10
TJ, Junction Temperature [oC]
VGS, Gate to Source Volatge [V]
Fig.3 On-Resistance Variation with
Temperature
Fig.4 On-Resistance Variation with
Gate to Source Voltage
50
40
30
20
10
0
* Notes :
VGS = 0V
* Notes :
VDS = 6V
10
1
0.1
0.0
0
1
2
3
4
5
0.2
0.4
0.6
0.8
1.0
1.2
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]
Fig.5 Transfer Characteristics
Fig.6 Body Diode Forward Voltage
Variation with Source Current and
Temperature
3
Apr. 2016. Ver. 1.0
MagnaChip Semiconductor Ltd.
6
4
2
0
5000
4000
3000
2000
1000
0
* Note : ID = 12A
VDS = 10V
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Ciss
Crss = Cgd
* Notes ;
1. VGS = 0 V
2. f = 1 MHz
Coss
Crss
0
3
6
9
12
0
5
10
15
20
VDS, Drain-Source Voltage [V]
QG, Total Gate Charge [nC]
Fig.7 Gate Charge Characteristics
Fig.8 Capacitance Characteristics
101
100
103
102
101
100
10-1
D=0.5
0.2
0.1
10-1
10-2
10-3
1 ms
0.05
0.02
0.01
Operation in This Area
is Limited by R DS(on)
10 ms
※ Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Zθ JC* Rθ (t) + TC
100 ms
Single Pulse
TJ=Max Rated
TA=25oC
JC
1 s
DC
single pulse
10-1
100
101
10-4
10-3
10-2
10-1
100
101
102
103
t1, Rectangular Pulse Duration [sec]
VDS, Drain-Source Voltage [V]
Fig.9 Maximum Safe Operating Area
Fig.10 Transient Thermal Response
Curve
4
Apr. 2016. Ver. 1.0
MagnaChip Semiconductor Ltd.
Package Dimension
8 Leads, SOIC
Dimensions are in millimeters unless otherwise specified
SOIC-8 Land Pattern
5
Apr. 2016. Ver. 1.0
MagnaChip Semiconductor Ltd.
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
6
Apr. 2016. Ver. 1.0
MagnaChip Semiconductor Ltd.
相关型号：
©2020 ICPDF网 联系我们和版权申明