MDU1517 [MGCHIP]

Single N-channel Trench MOSFET 30V, 100.0A, 2.9m(ohm);


型号：	MDU1517
厂家：	MagnaChip
描述：	Single N-channel Trench MOSFET 30V, 100.0A, 2.9m(ohm)
文件：	总6页 (文件大小：751K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ

ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

ꢀ ꢀ

ꢀ

MDU1517

ꢀ ꢀ SingleꢀNꢁchannelꢀTrenchꢀMOSFETꢀ30V,ꢀ100.0A,ꢀ2.9mꢂ

GeneralꢀDescriptionꢀ

Featuresꢀ

ꢀ

Theꢀ MDU1517ꢀ usesꢀ advancedꢀ MagnaChip’sꢀ MOSFETꢀ

Technology,ꢀwhichꢀprovidesꢀhighꢀperformanceꢀinꢀonꢁstateꢀ

resistance,ꢀ fastꢀ switchingꢀ performanceꢀ andꢀ excellentꢀ

quality.ꢀ ꢀ MDU1517ꢀ isꢀ suitableꢀ deviceꢀ forꢀ DCꢀ toꢀ DCꢀ

converterꢀandꢀgeneralꢀpurposeꢀapplications.ꢀ

ꢀ

ꢀꢀ

V_DSꢀ=ꢀ30Vꢀ

I_Dꢀ=ꢀ100.0Aꢀ@V_GSꢀ=ꢀ10Vꢀ

R_{DS(ON)ꢀ(MAX)}

<ꢀ2.9mꢀꢀ@V_GSꢀ=ꢀ10Vꢀ

<ꢀ4.4mꢀꢀ@V_GSꢀ=ꢀ4.5Vꢀ

100%ꢀUILꢀTestedꢀ

ꢀ

ꢀ ꢀ ꢀ ꢀ

ꢀꢀ

100%ꢀRgꢀTestedꢀ

ꢀ

Dꢀ Dꢀ Dꢀ Dꢀ

Sꢀ Sꢀ Sꢀ Gꢀ

Gꢀ Sꢀ Sꢀ Sꢀ

PowerDFN56ꢀ

AbsoluteꢀMaximumꢀRatingsꢀ(Taꢀ=ꢀ25^oC)ꢀ ꢀ

ꢀ

Characteristicsꢀ

Symbolꢀ

Ratingꢀ

30ꢀ

Unitꢀ

Vꢀ

ꢀ ꢀ DrainꢁSourceꢀVoltageꢀ

V_DSS

ꢀ

ꢀ ꢀ GateꢁSourceꢀVoltageꢀ

V_GSS

ꢀ

±20ꢀ

Vꢀ

ꢀ T_C=25^oCꢀ

100.0ꢀ

96.0ꢀ

ꢀ T_C=70^oCꢀ

T_A=25^oCꢀ

T_A=70^oCꢀ

ꢀ ꢀ ContinuousꢀDrainꢀCurrentꢀ⁽¹⁾

ꢀ

I_Dꢀ

Aꢀ

32.9⁽³⁾

26.2⁽³⁾

100ꢀ

ꢀ

ꢀ ꢀ PulsedꢀDrainꢀCurrentꢀ

I_DMꢀ

ꢀ T_C=25^oCꢀ

ꢀ T_C=70^oCꢀ

T_A=25^oCꢀ

T_A=70^oCꢀ

73.5ꢀ

47.0ꢀ

ꢀ ꢀ PowerꢀDissipationꢀ

P_Dꢀ

Wꢀ

5.5⁽³⁾

3.5⁽³⁾

ꢀ

ꢀ ꢀ SingleꢀPulseꢀAvalancheꢀEnergyꢀ⁽²⁾

ꢀ

E_AS

ꢀ

187ꢀ

mJꢀ

ꢀ ꢀ JunctionꢀandꢀStorageꢀTemperatureꢀRangeꢀ

T_J,ꢀT_stg

ꢀ

ꢁ55~150ꢀ

^oC

ꢀ

ThermalꢀCharacteristicsꢀ

ꢀ

Characteristicsꢀ

ThermalꢀResistance,ꢀJunctionꢁtoꢁAmbientꢀ⁽¹⁾

ThermalꢀResistance,ꢀJunctionꢁtoꢁCaseꢀ

Symbolꢀ

R_θJA

R_θJC

Ratingꢀ

22.7ꢀ

1.7ꢀ

Unitꢀ

ꢀ

^oC/Wꢀ

ꢀ

ꢀ ꢀ

ꢀ

OrderingꢀInformationꢀ

ꢀ

PartꢀNumberꢀ

Temp.ꢀRangeꢀ

ꢁ55~150^oCꢀ

Packageꢀ

Packingꢀ

Quantityꢀ

RohsꢀStatusꢀ

MDU1517RHꢀ

PowerDFN56ꢀ

Tapeꢀ&ꢀReelꢀ

3000ꢀunitsꢀ

HalogenꢀFreeꢀ

ꢀ

ElectricalꢀCharacteristicsꢀ(T_Jꢀ=25^oC)ꢀ

ꢀ

Characteristicsꢀ

Symbolꢀ

TestꢀConditionꢀ

Minꢀ

Typꢀ

Maxꢀ

Unitꢀ

StaticꢀCharacteristicsꢀ

ꢀ ꢀ DrainꢁSourceꢀBreakdownꢀVoltageꢀ

ꢀ ꢀ GateꢀThresholdꢀVoltageꢀ

BV_DSS

ꢀ

ꢀ ꢀ I_Dꢀ=ꢀ250ꢂA,ꢀV_GSꢀ=ꢀ0Vꢀ

ꢀ ꢀ V_DSꢀ=ꢀV_GS,ꢀI_Dꢀ=ꢀ250ꢂAꢀ

ꢀ ꢀ V_DSꢀ=ꢀ30V,ꢀV_GSꢀ=ꢀ0Vꢀ

ꢀ

30ꢀ

1.3ꢀ

ꢁꢀ

1.9ꢀ

ꢁꢀ

2.7ꢀ

1ꢀ

Vꢀ

V_GS(th)

ꢀ

ꢀ ꢀ DrainꢀCutꢁOffꢀCurrentꢀ

ꢀ ꢀ GateꢀLeakageꢀCurrentꢀ

I_DSS

ꢀ

T_J=55^oCꢀ

ꢁꢀ

5ꢀ

ꢂAꢀ

I_GSS

ꢀ

ꢀ ꢀ V_GSꢀ=ꢀ±20V,ꢀV_DSꢀ=ꢀ0Vꢀ

ꢀ ꢀ V_GSꢀ=ꢀ10V,ꢀI_Dꢀ=ꢀ26Aꢀ

ꢀ

ꢁꢀ

±0.1ꢀ

2.9ꢀ

4.2ꢀ

4.4ꢀ

ꢁꢀ

2.5ꢀ

3.6ꢀ

3.7ꢀ

46ꢀ

ꢀ ꢀ DrainꢁSourceꢀONꢀResistanceꢀ

R_DS(ON)

ꢀ

T_J=125^oCꢀ

ꢁꢀ

mꢃꢀ

Sꢀ

ꢀ ꢀ V_GSꢀ=ꢀ4.5V,ꢀI_Dꢀ=ꢀ21Aꢀ

ꢀ ꢀ V_DSꢀ=ꢀ5V,ꢀI_Dꢀ=ꢀ10Aꢀ

ꢀ ꢀ ForwardꢀTransconductanceꢀ

DynamicꢀCharacteristicsꢀ

ꢀ ꢀ TotalꢀGateꢀChargeꢀ

g_fsꢀ

Q_g(10V)

ꢀ

31.1ꢀ

14.9ꢀ

ꢁꢀ

41.5ꢀ

19.8ꢀ

8.1ꢀ

51.9ꢀ

24.8ꢀ

ꢁꢀ

ꢀ ꢀ TotalꢀGateꢀChargeꢀ

Q_g(4.5V)

ꢀ

V_DSꢀ=ꢀ15.0V,ꢀI_Dꢀ=ꢀ26A,ꢀ ꢀ

V_GSꢀ=ꢀ10Vꢀ

nCꢀ

pFꢀ

ꢀ ꢀ GateꢁSourceꢀChargeꢀ

Q_gsꢀ

ꢀ ꢀ GateꢁDrainꢀChargeꢀ

Q_gdꢀ

ꢁꢀ

7.9ꢀ

ꢁꢀ

ꢀ ꢀ InputꢀCapacitanceꢀ

C_iss

C_rss

C_oss

t_d(on)

t_rꢀ

t_d(off)

ꢀ

1891ꢀ

186ꢀ

398ꢀ

ꢁꢀ

2521ꢀ

248ꢀ

531ꢀ

12.6ꢀ

12.1ꢀ

42.6ꢀ

11.2ꢀ

1.0ꢀ

3151ꢀ

310ꢀ

664ꢀ

ꢁꢀ

V_DSꢀ=ꢀ15.0V,ꢀV_GSꢀ=ꢀ0V,ꢀ ꢀ

fꢀ=ꢀ1.0MHzꢀ

ꢀ ꢀ ReverseꢀTransferꢀCapacitanceꢀ

ꢀ ꢀ OutputꢀCapacitanceꢀ

ꢀ

ꢀ ꢀ TurnꢁOnꢀDelayꢀTimeꢀ

ꢀ

ꢀ ꢀ RiseꢀTimeꢀ

ꢁꢀ

V_GSꢀ=ꢀ10V,ꢀV_DSꢀ=ꢀ15.0V,ꢀ ꢀ

I_Dꢀ=ꢀ26Aꢀ,ꢀR_Gꢀ=ꢀ3.0ꢃꢀ

nsꢀ

ꢃꢀ

ꢀ ꢀ TurnꢁOffꢀDelayꢀTimeꢀ

ꢀ

ꢁꢀ

ꢀ ꢀ FallꢀTimeꢀ

t_fꢀ

ꢁꢀ

ꢀ ꢀ GateꢀResistanceꢀ

Rgꢀ

f=1ꢀMHzꢀ

ꢁꢀ

2.0ꢀ

DrainꢁSourceꢀBodyꢀDiodeꢀCharacteristicsꢀ

ꢀ ꢀ SourceꢁDrainꢀDiodeꢀForwardꢀVoltageꢀ

ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀTimeꢀ

ꢀ ꢀ BodyꢀDiodeꢀReverseꢀRecoveryꢀChargeꢀ

V_SD

ꢀ

ꢀ ꢀ I_Sꢀ=ꢀ26A,ꢀV_GSꢀ=ꢀ0Vꢀ

ꢁꢀ

0.8ꢀ

29.9ꢀ

21.4ꢀ

1.1ꢀ

44.9ꢀ

32.1ꢀ

Vꢀ

t_rrꢀ

nsꢀ

nCꢀ

ꢀ ꢀ I_Fꢀ=ꢀ26A,ꢀdl/dtꢀ=ꢀ100A/ꢂsꢀ

Q_rrꢀ

ꢀ

Noteꢀ:ꢀ

ꢀ

1.ꢀSurfaceꢀmountedꢀFRꢁ4ꢀboardꢀbyꢀJEDECꢀ(jesd51ꢁ7)ꢀ

2.ꢀE_ASꢀisꢀtestedꢀatꢀstartingꢀTjꢀ=ꢀ25℃,ꢀLꢀ=ꢀ0.1mH,ꢀI_ASꢀ=.34.0A,ꢀV_DDꢀ=ꢀ27V,ꢀV_GSꢀ=ꢀ10V.ꢀ

3.ꢀTꢀ<ꢀ10sec.ꢀ

ꢀ

May.ꢀ2011.ꢀVersionꢀ1.2ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ MagnaChipꢀSemiconductorꢀLtd.

ꢀ

ꢀ ꢀ

ꢀ

100

V_GSꢀ=ꢀ10V

4.0V

4.5V

5.0V

V_GSꢀ=ꢀ4.5V

V_GSꢀ=ꢀ10V

3.5V

3.0V

0.0

0.5

1.0

1.5

2.0

2.5

3.0

I_D,ꢀDrainꢀCurrentꢀ[A]

V_DS,ꢀDrainꢁSourceꢀVoltageꢀ[V]

Fig.2ꢀOnꢁResistanceꢀVariationꢀwithꢀ

DrainꢀCurrentꢀandꢀGateꢀVoltageꢀ

Fig.1ꢀOnꢁRegionꢀCharacteristicsꢀ

ꢀ

1.8

1.6

1.4

1.2

1.0

0.8

0.6

100

※ꢀNotesꢀ:

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ10ꢀV

ꢀꢀꢀ2.ꢀI_Dꢀ=ꢀ20.0ꢀA

※ꢀNotesꢀ:

ꢀꢀꢀꢀꢀI_Dꢀ=ꢀ26.0A

T_Aꢀ=ꢀ25℃

ꢁ50

ꢁ25

100

125

150

T_J,ꢀJunctionꢀTemperatureꢀ[^oC]

V_GS,ꢀGateꢀtoꢀSourceꢀVolatgeꢀ[V]

Fig.3ꢀOnꢁResistanceꢀVariationꢀwithꢀ

Temperatureꢀ

ꢀ

Fig.4ꢀOnꢁResistanceꢀVariationꢀwithꢀ

GateꢀtoꢀSourceꢀVoltageꢀ

ꢀ

100

T_A=25℃

※ꢁNotesꢁ:

ꢁꢁꢁꢁꢁꢁV_DSꢁ=ꢁ5V

25℃

0.1

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

V_GS,ꢀGateꢁSourceꢀVoltageꢀ[V]

ꢂV_SDꢁ[V]

Fig.5ꢀTransferꢀCharacteristicsꢀ

ꢀ

Fig.6ꢀBodyꢀDiodeꢀForwardꢀVoltageꢀ

VariationꢀwithꢀSourceꢀCurrentꢀandꢀ

Temperatureꢀ

ꢀ

ꢁ ꢁ

ꢀ

3500

_issꢀ=ꢀC_gsꢀ+ꢀC_gdꢀ(C_dsꢀ=ꢀshorted)

C_ossꢀ=ꢀC_dsꢀ+ꢀC_gd

_rssꢀ=ꢀC_gd

※ꢁNoteꢁ:ꢁI_Dꢁ=ꢁ26A

V_DSꢁ=ꢁ15V

3000

2500

2000

1500

1000

500

iss

※ꢀNotesꢀ;

C_oss

ꢀꢀꢀ1.ꢀV_GSꢀ=ꢀ0ꢀV

ꢀꢀꢀ2.ꢀfꢀ=ꢀ1ꢀMHz

C_rss

V_DS,ꢀDrainꢁSourceꢀVoltageꢀ[V]

Q_G,ꢀTotalꢀGateꢀChargeꢀ[nC]

Fig.7ꢁGateꢁChargeꢁCharacteristicsꢁ

Fig.8ꢁCapacitanceꢁCharacteristicsꢁ

ꢀ

10³

10²

10¹

10⁰

10^ꢁ1

120

100

OperationꢁinꢁThisꢁAreaꢁ

isꢁLimitedꢁbyꢁRꢁ_DS(on)

10ꢀms

100ꢀms

10s

SingleꢁPulse

T_J=Maxꢁrated

T_C=25℃

10^ꢁ1

10⁰

10¹

10²

100

125

150

T_A,ꢀCaseꢀTemperatureꢀ[℃]

V_DS,ꢀDrainꢁSourceꢀVoltageꢀ[V]

Fig.10ꢁ Maximumꢁ Drainꢁ Currentꢁ vs.ꢁ

CaseꢁTemperatureꢁ

Fig.9ꢁMaximumꢁSafeꢁOperatingꢁAreaꢁ

ꢀ

D=0.5

0.2

0.1

0.05

ꢁ1

0.02

0.01

ꢁ2

※ꢀNotesꢀ:

ꢀꢀꢀꢀꢀꢀDutyꢀFactor,ꢀD=t₁/t₂

ꢀꢀꢀꢀꢀꢀPEAKꢀT ꢀ=ꢀP_DMꢀ*ꢀZ ꢀ*ꢀR_θ(t)ꢀ+ꢀT_C

singleꢀpulse

ꢁ3

ꢁ4

ꢁ3

ꢁ2

ꢁ1

10⁰

10¹

t₁,ꢀRectangularꢀPulseꢀDurationꢀ[sec]

Fig.11ꢁ Transientꢁ Thermalꢁ Responseꢁ

Curveꢁ

ꢀ

ꢁ ꢁ

ꢀ

ꢁ

ꢀ

PackageꢁDimensionꢁ

ꢀ

PDFN56ꢁ(5x6mm)ꢁ

ꢁ

Dimensionsꢁareꢁinꢁmillimeters,ꢁunlessꢁotherwiseꢁspecifiedꢁ

ꢀ

ꢀ ꢀ

ꢀ

MILLIMETERSꢀ

Dimensionꢀ

Minꢀ

Maxꢀ

1.10ꢀ

0.51ꢀ

0.34ꢀ

5.10ꢀ

Aꢀ

bꢀ

0.90ꢀ

0.33ꢀ

0.20ꢀ

4.50ꢀ

Cꢀ

D1ꢀ

D2ꢀ

ꢁꢀ

4.22ꢀ

Eꢀ

E1ꢀ

E2ꢀ

eꢀ

5.90ꢀ

5.50ꢀ

ꢁꢀ

6.30ꢀ

6.10ꢀ

4.30ꢀ

1.27BSCꢀ

Hꢀ

0.41ꢀ

0.20ꢀ

0.51ꢀ

0.71ꢀ

ꢁꢀ

Kꢀ

Lꢀ

0.71ꢀ

αꢀ

0°ꢀ

12°ꢀ

ꢀ

ꢁ ꢁ

ꢀ

DISCLAIMER:ꢁ

ꢀ

TheꢀProductsꢀareꢀnotꢀdesignedꢀforꢀuseꢀinꢀhostileꢀenvironments,ꢀincluding,ꢀwithoutꢀlimitation,ꢀaircraft,ꢀnuclearꢀpowerꢀ

generation,ꢀ medicalꢀ appliances,ꢀ andꢀ devicesꢀ orꢀ systemsꢀinꢀ whichꢀ malfunctionꢀ ofꢀ anyꢀ Productꢀ canꢀ reasonablyꢀ beꢀ

expectedꢀ toꢀ resultꢀ inꢀ aꢀ personalꢀ injury.ꢀꢀ Seller’sꢀ customersꢀ usingꢀ orꢀ sellingꢀ Seller’sꢀ productsꢀ forꢀ useꢀ inꢀ suchꢀ

applicationsꢀdoꢀsoꢀatꢀtheirꢀownꢀriskꢀandꢀagreeꢀtoꢀfullyꢀdefendꢀandꢀindemnifyꢀSeller.ꢀ

ꢀ

MagnaChipꢀreservesꢀtheꢀrightꢀtoꢀchangeꢀtheꢀspecificationsꢀandꢀcircuitryꢀwithoutꢀnoticeꢀatꢀanyꢀtime.ꢀMagnaChipꢀdoesꢀnotꢀconsiderꢀresponsibilityꢀ

forꢀ useꢀ ofꢀ anyꢀ circuitryꢀ otherꢀ thanꢀ circuitryꢀ entirelyꢀ includedꢀ inꢀ aꢀ MagnaChipꢀ product.ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ isꢀ aꢀ registeredꢀ trademarkꢀ ofꢀ MagnaChipꢀ

SemiconductorꢀLtd.ꢀ ꢀ

ꢀ

相关型号：