MMP65R190PTH [MGCHIP]
650V 0.19(ohm) N-channel MOSFET;
| 型号： | MMP65R190PTH |
| 厂家： | 
MagnaChip |
| 描述： | 650V 0.19(ohm) N-channel MOSFET |
| 文件： | 总10页 (文件大小：1202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMP65R190P Datasheet
MMP65R190P
650V 0.19Ω N-channel MOSFET
Description
MMP65R190P is power MOSFET using magnachip’s advanced super junction technology that can
realize very low on-resistance and gate charge. It will provide much high efficiency by using
optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to
designers as well as low switching loss.
Key Parameters
Package & Internal Circuit
D
Parameter
VDS @ Tj,max
RDS(on),max
VTH,typ
Value
Unit
V
700
0.19
3
Ω
V
G
ID
20
A
G
Qg,typ
53
nC
D
S
S
Features
Low Power Loss by High Speed Switching and Low On-Resistance
100% Avalanche Tested
Green Package – Pb Free Plating, Halogen Free
Applications
PFC Power Supply Stages
Switching Applications
Adapter
Motor Control
DC – DC Converters
Ordering Information
Order Code
Marking
Temp. Range
Package
Packing
RoHS Status
MMP65R190PTH
65R190P
-55 ~ 150℃
TO-220
Tube
Halogen Free
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Aug. 2013 Revision 1.0
MagnaChip Semiconductor Ltd.
MMP65R190P Datasheet
Absolute Maximum Rating (Tc=25℃ unless otherwise specified)
Parameter
Symbol
VDSS
Rating
650
Unit
V
Note
Drain – Source voltage
Gate – Source voltage
VGSS
±30
20
V
A
TC=25℃
Continuous drain current
ID
12.7
60
A
TC=100℃
Pulsed drain current(1)
IDM
PD
A
Power dissipation
154
W
Single - pulse avalanche energy
MOSFET dv/dt ruggedness
Diode dv/dt ruggedness
EAS
dv/dt
dv/dt
Tstg
Tj
485
mJ
V/ns
V/ns
℃
50
15
Storage temperature
-55 ~150
150
Maximum operating junction
temperature
℃
1) Pulse width tP limited by Tj,max
2) ISD ≤ ID, VDS peak ≤ V(BR)DSS
Thermal Characteristics
Parameter
Symbol
Value
0.81
Unit
Thermal resistance, junction-case max
Thermal resistance, junction-ambient max
Rthjc
Rthja
℃/W
℃/W
62.5
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MagnaChip Semiconductor Ltd.
MMP65R190P Datasheet
Static Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Drain – Source
Breakdown voltage
V(BR)DSS
VGS(th)
IDSS
650
-
3
-
-
4
V
V
VGS = 0V, ID=0.25mA
VDS = VGS, ID=0.25mA
VDS = 700V, VGS = 0V
VGS = ±30V, VDS =0V
VGS = 10V, ID = 10 A
Gate Threshold Voltage
2
-
Zero Gate Voltage
Drain Current
1
μA
nA
Ω
Gate Leakage Current
IGSS
-
-
100
Drain-Source On
State Resistance
RDS(ON)
-
0.17 0.19
Dynamic Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Co(er)
td(on)
tr
-
-
-
-
-
-
-
-
-
-
-
-
1860
1425
76
-
-
-
-
-
-
-
-
-
-
-
-
VDS = 25V, VGS = 0V,
f = 1.0MHz
pF
ns
Effective Output Capacitance
Energy Related (3)
VDS = 0V to 560V,
VGS = 0V,f = 1.0MHz
39
Turn On Delay Time
Rise Time
40
75
VGS = 10V, RG = 25Ω,
VDS = 350V, ID = 20 A
Turn Off Delay Time
Fall Time
td(off)
tf
172
54
Total Gate Charge
Gate – Source Charge
Gate – Drain Charge
Gate Resistance
Qg
53
VGS = 10V, VDS =560V,
ID = 20 A
Qgs
Qgd
RG
13
nC
20
3.0
Ω
VGS = 0V, f = 1.0MHz
3) Co(er) is a capacitance that gives the same stored energy as COSS while VDS is rising from 0V to 80% V(BR)DSS
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Aug. 2013 Revision 1.0
MagnaChip Semiconductor Ltd.
MMP65R190P Datasheet
Reverse Diode Characteristics (Tc=25℃ unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit Test Condition
Continuous Diode Forward
Current
ISD
VSD
trr
-
-
-
-
-
-
20
A
V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
-
1.4
ISD = 20 A, VGS = 0 V
524
9.4
35.7
-
-
-
ns
μC
A
ISD = 20 A
di/dt = 100 A/μs
VDD = 100 V
Qrr
Irrm
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MMP65R190P Datasheet
Characteristic Graph
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MMP65R190P Datasheet
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MMP65R190P Datasheet
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MMP65R190P Datasheet
Test Circuit
Same type as DUT
VGS
Qg
100KΩ
10V
10V
+
-
Qgs
Qgd
VDS
1mA
DUT
10V
Charge
Fig15-2. Gate charge waveform
Fig15-1. Gate charge measurement circuit
trr
DUT
IFM
0.5 IRM
IF
ta
tb
+
-
0.25 IRM
VDS
di/dt
IS
L
0.75 IRM
IRM
Rg
10KΩ
+
-
Same type as DUT
VDD
VR
Vgs ± 15V
VRM(REC)
Fig16-1. Diode reverse recovery test circuit
Fig16-1. Diode reverse recovery test waveform
ID
DUT
VDS
VDS
Rg
25Ω
90%
RL
10%
VGS
Vgs
tp
+
VDD
-
Td(on)
tr
Td(off)
toff
tf
ton
Fig17-1. Switching time test circuit for resistive load
Fig17-2. Switching time waveform
IAS
DUT
VDS
BVDSS
tp
tAV
Rg
L
IAS
VDD
VDS(t)
Vgs
tp
+
VDD
-
Rds(on) * IAS
Fig18-1. Unclamped inductive load test circuit
Aug. 2013 Revision 1.0
Fig18-2. Unclamped inductive waveform
MagnaChip Semiconductor Ltd.
8
MMP65R190P Datasheet
Physical Dimension
3 Leads, TO-220
Dimensions are in millimeters unless otherwise specified
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MagnaChip Semiconductor Ltd.
MMP65R190P Datasheet
DISCLAIMER:
The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.
MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product.
Semiconductor Ltd.
is a registered trademark of MagnaChip
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MagnaChip Semiconductor Ltd.
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