MIC4420BMM [MICREL]

6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process; 6A峰值低侧MOSFET驱动器双极/ CMOS / DMOS工艺
MIC4420BMM
型号: MIC4420BMM
厂家: MICREL SEMICONDUCTOR    MICREL SEMICONDUCTOR
描述:

6A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process
6A峰值低侧MOSFET驱动器双极/ CMOS / DMOS工艺

驱动器 MOSFET驱动器 驱动程序和接口 接口集成电路 光电二极管 CD
文件: 总10页 (文件大小:99K)
中文:  中文翻译
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MIC4420/4429  
6A-Peak Low-Side MOSFET Driver  
Bipolar/CMOS/DMOS Process  
General Description  
Features  
• CMOS Construction  
• Latch-Up Protected: Will Withstand >500mA  
Reverse Output Current  
• Logic Input Withstands Negative Swing of Up to 5V  
• Matched Rise and Fall Times................................25ns  
• High Peak Output Current ............................... 6A Peak  
• Wide Operating Range...............................4.5V to 18V  
• High Capacitive Load Drive........................... 10,000pF  
• Low Delay Time .............................................55ns Typ  
MIC4420, MIC4429 and MIC429 MOSFET drivers are  
tough, efficient, and easy to use. The MIC4429 and MIC429  
are inverting drivers, while the MIC4420 is a non-inverting  
driver.  
They are capable of 6A (peak) output and can drive the  
largest MOSFETs with an improved safe operating mar-  
gin. The MIC4420/4429/429 accepts any logic input from  
2.4V to V without external speed-up capacitors or resistor  
S
networks. Proprietary circuits allow the input to swing  
negative by as much as 5V without damaging the part.  
Additional circuits protect against damage from electro-  
static discharge.  
• Logic High Input for Any Voltage From 2.4V to V  
S
• Low Equivalent Input Capacitance (typ)................. 6pF  
• Low Supply Current.............. 450µA With Logic 1 Input  
• Low Output Impedance ......................................... 2.5Ω  
• Output Voltage Swing Within 25mV of Ground or V  
S
MIC4420/4429/429 drivers can replace three or more dis-  
crete components, reducing PCB area requirements,  
simplifying product design, and reducing assembly cost.  
Applications  
• Switch Mode Power Supplies  
• Motor Controls  
• Pulse Transformer Driver  
• Class-D Switching Amplifiers  
Modern BiCMOS/DMOS construction guarantees freedom  
from latch-up. The rail-to-rail swing capability insures ad-  
equate gate voltage to the MOSFET during power up/  
down sequencing.  
Functional Diagram  
VS  
MIC4429  
INVERTING  
0.4mA  
0.1mA  
OUT  
IN  
2k  
MIC4420  
NON-INVERTING  
GND  
5-32  
April 1998  
MIC4420/4429  
Micrel  
Ordering Information  
Part No.  
MIC4420CN  
MIC4420BN  
MIC4420CM  
MIC4420BM  
MIC4420BMM  
MIC4420CT  
MIC4429CN  
MIC4429BN  
MIC4429CM  
MIC4429BM  
MIC4429BMM  
MIC4429CT  
Temperature Range  
Package  
8-Pin PDIP  
8-Pin PDIP  
8-Pin SOIC  
8-Pin SOIC  
8-Pin MSOP  
5-Pin TO-220  
8-Pin PDIP  
8-Pin PDIP  
8-Pin SOIC  
8-Pin SOIC  
8-Pin MSOP  
5-Pin TO-220  
Configuration  
Non-Inverting  
Non-Inverting  
Non-Inverting  
Non-Inverting  
Non-Inverting  
Non-Inverting  
Inverting  
0°C to +70°C  
–40°C to +85°C  
0°C to +70°C  
–40°C to +85°C  
–40°C to +85°C  
0°C to +70°C  
0°C to +70°C  
–40°C to +85°C  
0°C to +70°C  
Inverting  
Inverting  
–40°C to +85°C  
–40°C to +85°C  
0°C to +70°C  
Inverting  
Inverting  
Inverting  
Pin Configurations  
VS  
IN  
VS  
1
2
3
4
8
7
6
5
OUT  
OUT  
GND  
NC  
GND  
5
Plastic DIP (N)  
SOIC (M)  
MSOP (MM)  
5
4
3
2
1
OUT  
GND  
VS  
GND  
IN  
TO-220-5 (T)  
Pin Description  
Pin Number  
TO-220-5  
Pin Number  
DIP, SOIC, MSOP  
Pin Name  
Pin Function  
1
2, 4  
3, TAB  
5
2
IN  
GND  
VS  
Control Input  
4, 5  
1, 8  
6, 7  
3
Ground: Duplicate pins must be externally connected together.  
Supply Input: Duplicate pins must be externally connected together.  
Output: Duplicate pins must be externally connected together.  
Not connected.  
OUT  
NC  
April 1998  
5-33  
MIC4420/4429  
Micrel  
Absolute Maximum Ratings (Notes 1, 2 and 3) Operating Ratings  
Supply Voltage .......................................................... 20V  
Junction Temperature ............................................ 150°C  
Ambient Temperature  
Input Voltage ...............................V + 0.3V to GND – 5V  
S
Input Current (V > V ) ......................................... 50mA  
C Version ................................................0°C to +70°C  
B Version.............................................40°C to +85°C  
Package Thermal Resistance  
IN  
S
Power Dissipation, T 25°C  
A
PDIP ................................................................... 960W  
SOIC ............................................................. 1040mW  
5-Pin TO-220.......................................................... 2W  
5-pin TO-220 ) .......................................... 10°C/W  
JC  
8-pin MSOP ) .......................................... 250°C/W  
JA  
Power Dissipation, T 25°C  
C
5-Pin TO-220..................................................... 12.5W  
Derating Factors (to Ambient)  
PDIP ............................................................ 7.7mW/°C  
SOIC ........................................................... 8.3mW/°C  
5-Pin TO-220................................................ 17mW/°C  
Storage Temperature ............................65°C to +150°C  
Lead Temperature (10 sec.) .................................. 300°C  
Electrical Characteristics: (T = 25°C with 4.5V V 18V unless otherwise specified.)  
A
S
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
INPUT  
V
Logic 1 Input Voltage  
Logic 0 Input Voltage  
Input Voltage Range  
Input Current  
2.4  
1.4  
1.1  
V
V
IH  
V
0.8  
IL  
V
–5  
V + 0.3  
S
V
IN  
I
0 V V V  
–10  
10  
µA  
IN  
IN  
S
OUTPUT  
V
High Output Voltage  
Low Output Voltage  
See Figure 1  
See Figure 1  
V –0.025  
S
V
V
OH  
V
0.025  
2.8  
OL  
R
O
Output Resistance,  
Output Low  
I
= 10 mA, V = 18 V  
S
1.7  
1.5  
6
OUT  
R
O
Output Resistance,  
Output High  
I
= 10 mA, V = 18 V  
S
2.5  
OUT  
I
Peak Output Current  
V
= 18 V (See Figure 5)  
A
PK  
S
I
Latch-Up Protection  
Withstand Reverse Current  
>500  
mA  
R
SWITCHING TIME (Note 3)  
t
t
t
t
Rise Time  
Fall Time  
Test Figure 1, C = 2500 pF  
L
12  
13  
18  
48  
35  
35  
75  
75  
ns  
ns  
ns  
ns  
R
Test Figure 1, C = 2500 pF  
L
F
Delay Time  
Delay Time  
Test Figure 1  
Test Figure 1  
D1  
D2  
POWER SUPPLY  
Power Supply Current  
I
V
V
= 3 V  
= 0 V  
0.45  
90  
1.5  
150  
mA  
µA  
S
IN  
IN  
V
Operating Input Voltage  
4.5  
18  
V
S
5-34  
April 1998  
MIC4420/4429  
Micrel  
Electrical Characteristics: (T = –55°C to +125°C with 4.5V V 18V unless otherwise specified.)  
A
S
Symbol  
Parameter  
Conditions  
Min  
Typ  
Max  
Units  
INPUT  
V
Logic 1 Input Voltage  
Logic 0 Input Voltage  
Input Voltage Range  
Input Current  
2.4  
V
V
IH  
V
0.8  
IL  
V
–5  
V + 0.3  
S
V
IN  
I
0V V V  
–10  
10  
µA  
IN  
IN  
S
OUTPUT  
V
High Output Voltage  
Low Output Voltage  
Figure 1  
Figure 1  
V –0.025  
S
V
V
OH  
V
0.025  
5
OL  
R
O
Output Resistance,  
Output Low  
I
= 10mA, V = 18V  
S
3
OUT  
R
O
Output Resistance,  
Output High  
I
= 10mA, V = 18V  
S
2.3  
5
OUT  
SWITCHING TIME (Note 3)  
t
t
t
t
Rise Time  
Fall Time  
Figure 1, C = 2500pF  
L
32  
34  
50  
65  
60  
60  
ns  
ns  
ns  
ns  
R
Figure 1, C = 2500pF  
L
F
Delay Time  
Delay Time  
Figure 1  
Figure 1  
100  
100  
D1  
D2  
POWER SUPPLY  
Power Supply Current  
I
V
V
= 3V  
= 0V  
0.45  
0.06  
3.0  
0.4  
mA  
mA  
S
IN  
IN  
5
V
Operating Input Voltage  
4.5  
18  
V
S
NOTE 1:  
NOTE 2:  
Functional operation above the absolute maximum stress ratings is not implied.  
Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to  
prevent damage from static discharge.  
NOTE 3:  
Switching times guaranteed by design.  
Test Circuits  
VS = 18V  
VS = 18V  
0.1µF  
1.0µF  
0.1µF  
0.1µF  
1.0µF  
0.1µF  
IN  
OUT  
2500pF  
IN  
OUT  
2500pF  
MIC4429  
MIC4420  
5V  
90%  
5V  
90%  
2.5V  
2.5V  
INPUT  
INPUT  
t
PW 0.5µs  
t
PW 0.5µs  
10%  
0V  
10%  
0V  
tPW  
tPW  
tD1  
tF  
tR  
tD2  
tD1  
tF  
tD2  
tR  
VS  
90%  
VS  
90%  
OUTPUT  
OUTPUT  
10%  
0V  
10%  
0V  
Figure 1a. Inverting Driver Switching Time  
Figure 1b. Noninverting Driver Switching Time  
April 1998  
5-35  
MIC4420/4429  
Micrel  
Typical Characteristic Curves  
Rise Time vs. Supply Voltage  
Fall Time vs. Supply Voltage  
Rise and Fall Times vs. Temperature  
60  
50  
40  
30  
20  
10  
0
25  
20  
15  
10  
5
C
V
= 2200 pF  
= 18V  
L
S
50  
C
= 10,000 pF  
L
C
= 10,000 pF  
L
40  
30  
20  
10  
0
t
FALL  
t
RISE  
C
C
= 4700 pF  
L
C
C
= 4700 pF  
L
= 2200 pF  
L
= 2200 pF  
L
0
–60  
5
7
9
11  
(V)  
13  
15  
5
7
9
11  
(V)  
13  
15  
–20  
20  
60  
100  
140  
V
TEMPERATURE (°C)  
V
S
S
Delay Time vs. Supply Voltage  
Rise Time vs. Capacitive Load  
Fall Time vs. Capacitive Load  
50  
60  
50  
40  
30  
20  
10  
0
50  
40  
40  
30  
30  
20  
t
D2  
V
= 5V  
S
20  
V
= 5V  
S
V
= 12V  
V
= 12V  
S
S
V
= 18V  
S
V
= 18V  
S
10  
5
10  
5
t
D1  
1000  
3000  
CAPACITIVE LOAD (pF)  
10,000  
1000  
10,000  
4
6
8
10  
12 14 16 18  
3000  
CAPACITIVE LOAD (pF)  
SUPPLY VOLTAGE (V)  
Propagation Delay Time  
vs. Temperature  
Supply Current vs. Capacitive Load  
Supply Current vs. Frequency  
60  
84  
1000  
100  
V
= 15V  
C = 2200 pF  
L
S
18V  
70  
56  
42  
28  
14  
0
t
D2  
50  
40  
30  
20  
10  
10V  
5V  
500 kHz  
200 kHz  
20 kHz  
1000  
10,000  
t
D1  
10  
0
C
V
= 2200 pF  
= 18V  
L
S
0
100  
0
100  
1000  
10,000  
–60  
–20  
20  
60  
100  
140  
CAPACITIVE LOAD (pF)  
FREQUENCY (kHz)  
TEMPERATURE (°C)  
5-36  
April 1998  
MIC4420/4429  
Micrel  
Typical Characteristic Curves (Cont.)  
Quiescent Power Supply  
Voltage vs. Supply Current  
1000  
Quiescent Power Supply  
Current vs. Temperature  
900  
800  
700  
600  
500  
400  
LOGIC “1” INPUT  
V
= 18V  
S
800  
600  
LOGIC “1” INPUT  
400  
200  
LOGIC “0” INPUT  
0
0
4
8
12  
16  
20  
–60  
–20  
20  
60  
100  
140  
SUPPLY VOLTAGE (V)  
TEMPERATURE (°C)  
Low-State Output Resistance  
High-State Output Resistance  
2.5  
2
5
4
3
2
100 mA  
5
100 mA  
50 mA  
50 mA  
10 mA  
1.5  
1
10 mA  
5
7
9
11  
(V)  
13  
15  
5
7
9
11  
(V)  
13  
15  
V
V
S
S
Effect of Input Amplitude  
on Propagation Delay  
Crossover Area vs. Supply Voltage  
200  
160  
120  
80  
2.0  
LOAD = 2200 pF  
PER TRANSITION  
1.5  
INPUT 2.4V  
1.0  
0.5  
0
INPUT 3.0V  
INPUT 5.0V  
40  
INPUT 8V AND 10V  
0
5
6
7
8
9
10 11 12 13 14 15  
5
6
7
8
9
10 11 12 13 14 15  
V
(V)  
SUPPLY VOLTAGE V (V)  
S
s
April 1998  
5-37  
MIC4420/4429  
Micrel  
Applications Information  
Grounding  
The high current capability of the MIC4420/4429 demands  
careful PC board layout for best performance Since the  
MIC4429 is an inverting driver, any ground lead impedance  
willappearasnegativefeedbackwhichcandegradeswitch-  
ing speed. Feedback is especially noticeable with slow-rise  
time inputs. The MIC4429 input structure includes 300mV  
of hysteresis to ensure clean transitions and freedom from  
oscillation, but attention to layout is still recommended.  
Supply Bypassing  
Charging and discharging large capacitive loads quickly  
requires large currents. For example, charging a 2500pF  
load to 18V in 25ns requires a 1.8 A current from the device  
power supply.  
The MIC4420/4429 has double bonding on the supply pins,  
the ground pins and output pins This reduces parasitic lead  
inductance. Low inductance enables large currents to be  
switched rapidly. It also reduces internal ringing that can  
cause voltage breakdown when the driver is operated at or  
near the maximum rated voltage.  
Figure3showsthefeedbackeffectindetail.AstheMIC4429  
input begins to go positive, the output goes negative and  
several amperes of current flow in the ground lead. As little  
as 0.05of PC trace resistance can produce hundreds of  
millivolts at the MIC4429 ground pins. If the driving logic is  
referenced to power ground, the effective logic input level is  
reduced and oscillation may result.  
Internal ringing can also cause output oscillation due to  
feedback. This feedback is added to the input signal since  
it is referenced to the same ground.  
To insure optimum performance, separate ground traces  
should be provided for the logic and power connections.  
Connecting the logic ground directly to the MIC4429 GND  
pins will ensure full logic drive to the input and ensure fast  
output switching. Both of the MIC4429 GND pins should,  
however, still be connected to power ground.  
To guarantee low supply impedance over a wide frequency  
range,aparallelcapacitorcombinationisrecommendedfor  
supply bypassing. Low inductance ceramic disk capacitors  
with short lead lengths (< 0.5 inch) should be used. A 1µF  
low ESR film capacitor in parallel with two 0.1 µF low ESR  
ceramic capacitors, (such as AVX RAM GUARD®), pro-  
vides adequate bypassing. Connect one ceramic capacitor  
directly between pins 1 and 4. Connect the second ceramic  
capacitor directly between pins 8 and 5.  
+15  
(x2) 1N4448  
5.6 k  
OUTPUT VOLTAGE vs LOAD CURRENT  
30  
560 Ω  
0.1µF  
50V  
29  
+
1µF  
50V  
28  
BYV 10 (x 2)  
1
MKS 2  
30 LINE  
8
27  
+
6, 7  
2
MIC4429  
26  
25  
0.1µF  
WIMA  
MKS 2  
220 µF 50V  
+
5
35 µF 50V  
4
0
20 40 60 80 100 120 140  
mA  
UNITED CHEMCON SXE  
Figure 3. Self-Contained Voltage Doubler  
5-38  
April 1998  
MIC4420/4429  
Micrel  
current to destroy the device. The MIC4420/4429 on the  
other hand, can source or sink several amperes and drive  
large capacitive loads at high frequency. The package  
power dissipation limit can easily be exceeded. Therefore,  
some attention should be given to power dissipation when  
driving low impedance loads and/or operating at high fre-  
quency.  
Input Stage  
The input voltage level of the 4429 changes the quiescent  
supply current. The N channel MOSFET input stage tran-  
sistor drives a 450µA current source load. With a logic “1”  
input, the maximum quiescent supply current is 450µA.  
Logic “0” input level signals reduce quiescent current to  
55µA maximum.  
The supply current vs frequency and supply current vs  
capacitive load characteristic curves aid in determining  
power dissipation calculations. Table 1 lists the maximum  
safe operating frequency for several power supply voltages  
when driving a 2500pF load. More accurate power dissipa-  
tion figures can be obtained by summing the three dissipa-  
tion sources.  
The MIC4420/4429 input is designed to provide 300mV of  
hysteresis. This provides clean transitions, reduces noise  
sensitivity, and minimizes output stage current spiking  
when changing states. Input voltage threshold level is  
approximately 1.5V, making the device TTL compatible  
over the 4 .5V to 18V operating supply voltage range. Input  
current is less than 10µA over this range.  
Given the power dissipation in the device, and the thermal  
resistance of the package, junction operating temperature  
for any ambient is easy to calculate. For example, the  
thermal resistance of the 8-pin MSOP package, from the  
data sheet, is 250°C/W. In a 25°C ambient, then, using a  
maximum junction temperature of 150°C, this package will  
dissipate 500mW.  
TheMIC4429canbedirectlydrivenbytheTL494, SG1526/  
1527, SG1524, TSC170, MIC38HC42 and similar switch  
mode power supply integrated circuits. By offloading the  
power-driving duties to the MIC4420/4429, the power sup-  
ply controller can operate at lower dissipation. This can  
improve performance and reliability.  
+
The input can be greater than the V supply, however,  
S
Accurate power dissipation numbers can be obtained by  
summing the three sources of power dissipation in the  
device:  
current will flow into the input lead. The propagation delay  
for T will increase to as much as 400ns at room tempera-  
D2  
ture. The input currents can be as high as 30mA p-p  
• Load Power Dissipation (P )  
L
(6.4mA  
) with the input, 6 V greater than the supply  
RMS  
• Quiescent power dissipation (P )  
Q
voltage. No damage will occur to MIC4420/4429 however,  
and it will not latch.  
5
• Transition power dissipation (P )  
T
Calculation of load power dissipation differs depending on  
whether the load is capacitive, resistive or inductive.  
The input appears as a 7pF capacitance, and does not  
change even if the input is driven from an AC source. Care  
should be taken so that the input does not go more than 5  
volts below the negative rail.  
Resistive Load Power Dissipation  
Dissipation caused by a resistive load can be calculated as:  
2
Power Dissipation  
P = I R D  
L
O
CMOS circuits usually permit the user to ignore power  
dissipation. Logic families such as 4000 and 74C have  
outputswhichcanonlysupplyafewmilliamperesofcurrent,  
and even shorting outputs to ground will not force enough  
where:  
I = the current drawn by the load  
R
O
= the output resistance of the driver when the output is  
high, at the power supply voltage used. (See data  
sheet)  
D = fraction of time the load is conducting (duty cycle)  
+18 V  
Table 1: MIC4429 Maximum  
Operating Frequency  
WIMA  
MK22  
1 µF  
5.0V  
18 V  
1
TEK CURRENT  
PROBE 6302  
V
Max Frequency  
500kHz  
S
8
2
6, 7  
18V  
15V  
10V  
MIC4429  
0 V  
5
0 V  
700kHz  
0.1µF  
0.1µF  
4
10,000 pF  
POLYCARBONATE  
1.6MHz  
Conditions: 1. DIP Package (θ = 130°C/W)  
JA  
2. T = 25°C  
A
3. C = 2500pF  
L
Figure 3. Switching Time Degradation Due to  
Negative Feedback  
April 1998  
5-39  
MIC4420/4429  
Micrel  
Capacitive Load Power Dissipation  
where:  
I = quiescent current with input high  
Dissipationcausedbyacapacitiveloadissimplytheenergy  
placed in, or removed from, the load capacitance by the  
driver. The energy stored in a capacitor is described by the  
equation:  
H
I = quiescent current with input low  
L
D = fraction of time input is high (duty cycle)  
V = power supply voltage  
S
2
E = 1/2 C V  
Transition Power Dissipation  
As this energy is lost in the driver each time the load is  
charged or discharged, for power dissipation calculations  
the 1/2 is removed. This equation also shows that it is good  
practice not to place more voltage on the capacitor than is  
necessary, as dissipation increases as the square of the  
voltage applied to the capacitor. For a driver with a capaci-  
tive load:  
Transition power is dissipated in the driver each time its  
output changes state, because during the transition, for a  
very brief interval, both the N- and P-channel MOSFETs in  
theoutputtotem-poleareONsimultaneously, andacurrent  
+
is conducted through them from V to ground. The transi-  
S
tion power dissipation is approximately:  
P = 2 f V (A•s)  
T
S
2
P = f C (V )  
L
S
where (A•s) is a time-current factor derived from the typical  
characteristic curves.  
where:  
f = Operating Frequency  
C = Load Capacitance  
V = Driver Supply Voltage  
S
Total power (P ) then, as previously described is:  
D
P = P + P +P  
D
L
Q
T
Definitions  
Inductive Load Power Dissipation  
C = Load Capacitance in Farads.  
L
For inductive loads the situation is more complicated. For  
the part of the cycle in which the driver is actively forcing  
current into the inductor, the situation is the same as it is in  
the resistive case:  
D = Duty Cycle expressed as the fraction of time the  
input to the driver is high.  
f = Operating Frequency of the driver in Hertz  
2
P
L1  
= I R D  
O
I = Power supply current drawn by a driver when  
H
However, in this instance the R required may be either the  
O
both inputs are high and neither output is loaded.  
on resistance of the driver when its output is in the high  
state, or its on resistance when the driver is in the low state,  
depending on how the inductor is connected, and this is still  
only half the story. For the part of the cycle when the  
inductor is forcing current through the driver, dissipation is  
best described as  
I = Power supply current drawn by a driver when  
L
both inputs are low and neither output is loaded.  
I = Output current from a driver in Amps.  
D
P = Total power dissipated in a driver in Watts.  
D
P
L2  
= I V (1-D)  
P = Power dissipated in the driver due to the driver’s  
L
D
load in Watts.  
whereV istheforwarddropoftheclampdiodeinthedriver  
D
(generally around 0.7V). The two parts of the load dissipa-  
P = Power dissipated in a quiescent driver in Watts.  
Q
tion must be summed in to produce P  
L
P = Power dissipated in a driver when the output  
T
P = P + P  
L2  
changesstates(“shoot-throughcurrent”)inWatts.  
NOTE: The “shoot-through” current from a dual  
transition (once up, once down) for both drivers  
is shown by the "Typical Characteristic Curve :  
Crossover Area vs. Supply Voltage and is in  
ampere-seconds. This figure must be multiplied  
by the number of repetitions per second (fre-  
quency) to find Watts.  
L
L1  
Quiescent Power Dissipation  
Quiescent power dissipation (P , as described in the input  
Q
section) depends on whether the input is high or low. A low  
input will result in a maximum current drain (per driver) of  
0.2mA; a logic high will result in a current drain of 2.0mA.  
Quiescent power can therefore be found from:  
R = Output resistance of a driver in Ohms.  
O
P
Q
= V [D I + (1-D) I ]  
S H L  
V = Power supply voltage to the IC in Volts.  
S
5-40  
April 1998  
MIC4420/4429  
Micrel  
+18 V  
WIMA  
MK22  
1 µF  
5.0V  
18 V  
1
TEK CURRENT  
PROBE 6302  
8
2
6, 7  
MIC4429  
0 V  
5
0 V  
0.1µF  
0.1µF  
4
10,000 pF  
POLYCARBONATE  
5
Figure 6. Peak Output Current Test Circuit  
April 1998  
5-41  

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