MIC4451_05 [MICREL]
12A-Peak Low-Side MOSFET Driver; 12A峰值低侧MOSFET驱动器
| 型号： | MIC4451_05 |
| 厂家： | 
MICREL SEMICONDUCTOR |
| 描述： | 12A-Peak Low-Side MOSFET Driver |
| 文件： | 总12页 (文件大小：199K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC4451/4452
12A-Peak Low-Side MOSFET Driver
Bipolar/CMOS/DMOS Process
General Description
Features
• BiCMOS/DMOS Construction
• Latch-Up Proof: Fully Isolated Process is Inherently
Immune to Any Latch-up.
MIC4451 and MIC4452 CMOS MOSFET drivers are tough,
efficient, and easy to use. The MIC4451 is an inverting driver,
while the MIC4452 is a non-inverting driver.
• Input Will Withstand Negative Swing of Up to 5V
• Matched Rise and Fall Times ............................... 25ns
• High Peak Output Current .............................12A Peak
• Wide Operating Range.............................. 4.5V to 18V
• High Capacitive Load Drive...........................62,000pF
• Low Delay Time.............................................30ns Typ.
• Logic High Input for Any Voltage from 2.4V to VS
• Low Supply Current.............. 450µA With Logic 1 Input
• Low Output Impedance .........................................1.0Ω
• Output Voltage Swing to Within 25mV of GND or VS
• Low Equivalent Input Capacitance (typ).................7pF
Both versions are capable of 12A(peak) output and can drive
the largest MOSFETs with an improved safe operating mar-
gin. The MIC4451/4452 accepts any logic input from 2.4V to
VS without external speed-up capacitors or resistor networks.
Proprietary circuits allow the input to swing negative by as
much as 5V without damaging the part. Additional circuits
protect against damage from electrostatic discharge.
MIC4451/4452 drivers can replace three or more discrete
components, reducing PCB area requirements, simplifying
product design, and reducing assembly cost.
Applications
• Switch Mode Power Supplies
• Motor Controls
• Pulse Transformer Driver
• Class-D Switching Amplifiers
• Line Drivers
• Driving MOSFET or IGBT Parallel Chip Modules
• Local Power ON/OFF Switch
• Pulse Generators
Modern Bipolar/CMOS/DMOS construction guarantees
freedom from latch-up. The rail-to-rail swing capability of
CMOS/DMOS insures adequate gate voltage to the MOS-
FET during power up/down sequencing. Since these devices
are fabricated on a self-aligned process, they have very low
crossover current, run cool, use little power, and are easy
to drive.
Functional Diagram
VS
MIC4451
INVERTING
0.3mA
0.1mA
OUT
IN
2kΩ
MIC4452
NONINVERTING
GND
Micrel, Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel + 1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
July 2005
1
MIC4451/4452
MIC4451/4452
Micrel, Inc.
Ordering Information
Part Number
Temperature
Range
Package
Configuration
Standard
Pb-Free
MIC4451BN
MIC4451BM
MIC4451CT
MIC4452BN
MIC4452BM
MIC4452CT
MIC4451YN
MIC4451YM
MIC4451ZT
MIC4452YN
MIC4452YM
MIC4452ZT
–40ºC to +85ºC
–40ºC to +85ºC
0ºC to +70ºC
8-pin Plastic DIP
8-pin SOIC
Inverting
Inverting
5-pin TO-220
8-pin Plastic DIP
8-pin SOIC
Inverting
–40ºC to +85ºC
–40ºC to +85ºC
0ºC to +70ºC
Non-Inverting
Non-Inverting
Non-Inverting
5-pin TO-220
Pin Configurations
VS
IN
VS
1
2
3
4
8
7
6
5
OUT
OUT
GND
NC
GND
Plastic DIP (N)
SOIC (M)
5
4
3
2
1
OUT
GND
VS
GND
IN
TO-220-5 (T)
Pin Description
Pin Number
Pin Number
Pin Name
Pin Function
TO-220-5
DIP, SOIC
1
2, 4
3, TAB
5
2
IN
GND
VS
Control Input
4, 5
1, 8
6, 7
3
Ground: Duplicate pins must be externally connected together.
Supply Input: Duplicate pins must be externally connected together.
Output: Duplicate pins must be externally connected together.
Not connected.
OUT
NC
MIC4451/4452
2
July 2005
MIC4451/4452
Micrel, Inc.
Absolute Maximum Ratings (Notes 1, 2 and 3)
Supply Voltage ..............................................................20V
Input Voltage ...................................VS + 0.3V to GND – 5V
Input Current (VIN > VS).............................................. 50 mA
Power Dissipation, TAMBIENT ≤ 25°C
Operating Ratings
Operating Temperature (Chip)................................... 150°C
Operating Temperature (Ambient)
C Version.................................................... 0°C to +70°C
B Version ................................................ –40°C to +85°C
Thermal Impedances (To Case)
PDIP ....................................................................960mW
SOIC..................................................................1040mW
5-Pin TO-220 ..............................................................2W
Power Dissipation, TCASE ≤ 25°C
5-Pin TO-220 (θJC) ...............................................10°C/W
5-Pin TO-220 .........................................................12.5W
Derating Factors (to Ambient)
PDIP ................................................................7.7mW/°C
SOIC...............................................................8.3 mW/°C
5-Pin TO-220 ....................................................17mW/°C
Storage Temperature................................ –65°C to +150°C
Lead Temperature (10 sec) ....................................... 300°C
Electrical Characteristics(Note 4)
:
(TA = 25°C with 4.5 V ≤ VS ≤ 18 V unless otherwise specified.)
Symbol
INPUT
VIH
Parameter
Conditions
Min
Typ
Max
Units
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Voltage Range
Input Current
2.4
1.3
1.1
V
V
VIL
0.8
VS+.3
10
VIN
–5
V
IIN
0 V ≤ VIN ≤ VS
–10
µA
OUTPUT
VOH
High Output Voltage
Low Output Voltage
See Figure 1
VS–.025
V
V
Ω
VOL
See Figure 1
.025
1.5
RO
Output Resistance,
Output High
IOUT = 10 mA, VS = 18V
0.6
0.8
12
RO
Output Resistance,
Output Low
IOUT = 10 mA, VS = 18V
VS = 18 V (See Figure 6)
1.5
Ω
IPK
IDC
IR
Peak Output Current
A
A
Continuous Output Current
2
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µs
>1500
mA
SWITCHING TIME (Note 3)
tR
Rise Time
Fall Time
Test Figure 1, CL = 15,000 pF
Test Figure 1, CL = 15,000 pF
Test Figure 1
20
24
15
35
40
50
30
60
ns
ns
ns
ns
tF
tD1
tD2
Delay Time
Delay Time
Test Figure 1
Power Supply
IS
Power Supply Current
VIN = 3 V
0.4
80
1.5
150
mA
µA
VIN = 0 V
VS
Operating Input Voltage
4.5
18
V
July 2005
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MIC4451/4452
MIC4451/4452
Micrel, Inc.
Electrical Characteristics:
(Over operating temperature range with 4.5V < VS < 18V unless otherwise specified.)
Symbol
INPUT
VIH
Parameter
Conditions
Min
Typ
Max
Units
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Voltage Range
Input Current
2.4
1.4
1.0
V
V
VIL
0.8
VS+.3
10
VIN
–5
V
IIN
0V ≤ VIN ≤ VS
–10
µA
OUTPUT
VOH
High Output Voltage
Low Output Voltage
Figure 1
VS–.025
V
V
Ω
VOL
Figure 1
0.025
2.2
RO
Output Resistance,
Output High
IOUT = 10mA, VS = 18V
0.8
1.3
RO
Output Resistance,
Output Low
IOUT = 10mA, VS = 18V
2.2
Ω
SWITCHING TIME (Note 3)
tR
Rise Time
Fall Time
Figure 1, CL = 15,000pF
Figure 1, CL = 15,000pF
Figure 1
23
30
20
40
50
60
40
80
ns
ns
ns
ns
tF
tD1
tD2
Delay Time
Delay Time
Figure 1
POWER SUPPLY
IS
Power Supply Current
VIN = 3V
0.6
0.1
3
0.4
mA
V
VIN = 0V
VS
Operating Input Voltage
4.5
18
NOTE 1:
NOTE 2:
Functional operation above the absolute maximum stress ratings is not implied.
Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to
prevent damage from static discharge.
NOTE 3:
NOTE 4:
Switching times guaranteed by design.
Specification for packaged product only.
Test Circuits
VS = 18V
VS = 18V
0.1µF
1.0µF
0.1µF
1.0µF
0.1µF
0.1µF
IN
OUT
15000pF
IN
OUT
15000pF
MIC4451
MIC4452
5V
90%
5V
90%
2.5V
tPW≥ 0.5µs
2.5V
tPW≥ 0.5µs
INPUT
INPUT
10%
0V
10%
0V
tPW
tPW
tD1
tF
tD2
tR
tD1
tF
tR
tD2
V S
90%
V S
90%
OUTPUT
10%
OUTPUT
10%
0V
0V
Figure 2. Noninverting Driver Switching Time
July 2005
Figure 1. Inverting Driver Switching Time
MIC4451/4452
4
MIC4451/4452
Micrel, Inc.
Typical Characteristic Curves
Rise Time
FallTime
Rise and FallTimes
vs. Supply Voltage
vs. Supply Voltage
vs. Temperature
220
220
200
180
160
140
120
100
80
60
50
40
30
20
10
0
C
V
= 10,000pF
= 18V
200
180
160
140
L
S
t
FALL
47,000pF
47,000pF
120
100
80
60
40
20
0
22,000pF
10,000pF
t
RISE
22,000pF
10,000pF
60
40
20
0
-40
0
40
80
120
4
6
8
10 12 14 16 18
4
6
8
10 12 14 16 18
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
TEMPERATURE ( °C)
Rise Time
Fall Time
Crossover Energy
vs. Supply Voltage
vs. Capacitive Load
vs. Capacitive Load
-7
300
250
200
150
100
50
300
250
200
150
100
50
10
PER TRANSITION
5V
5V
-8
-9
10
10
10V
10V
18V
18V
0
0
100
1000
10k
100k
100
1000
10k
100k
4
6
8
10 12 14 16 18
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
VOLTAGE (V)
Supply Current
Supply Current
Supply Current
vs. Capacitive Load
V
vs. Capacitive Load
V
vs. Capacitive Load
220
200
180
160
140
120
100
80
150
120
90
60
30
0
75
60
45
30
15
0
= 18V
= 12V
V = 5V
S
S
S
z
H
M
1
z
z
z
H
H
z
H
H
k
z
H
z
z
z
k
k
H
H
H
k
60
M
M
0
0
0
k
k
1
1
5
0
5
0
5
0
0
0
0
40
2
2
2
20
0
100
1000
10k
100k
100
1000
10k
100k
100
1000
10k
100k
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
Supply Current
vs. Frequency
= 18V
Supply Current
vs. Frequency
Supply Current
vs. Frequency
180
160
140
120
100
80
120
100
80
60
40
20
0
60
50
40
30
20
10
0
V
V
= 12V
V
S
= 5V
S
S
F
µ
1
0
.
0
F
µ
F
F
F
µ
1
F
µ
F
µ
0
p
.
1
µ
1
1
.
F
.
.
0
0
1
p
0
0
0
0
0
0
.
0
F
0
0
1
p
0
0
1
0
0
60
1
40
20
0
10k
100k
1M
10M
10k
100k
1M
10M
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FREQUENCY (Hz)
July 2005
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MIC4451/4452
MIC4451/4452
Micrel, Inc.
Typical Characteristic Curves (Cont.)
Propagation Delay
vs. Input Amplitude
Propagation Delay
vs. Temperature
Propagation Delay
vs. Supply Voltage
120
110
100
90
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
50
40
30
20
10
0
V
= 10V
S
t
D2
t
D2
t
D2
t
D1
t
D1
t
D1
0
2
4
6
8
10
-40
0
40
80
120
4
6
8
10 12 14 16 18
INPUT (V)
TEMPERATURE ( °C)
SUPPLY VOLTAGE (V)
Quiescent Supply Current
vs. Temperature
High-State Output Resist.
Low-State Output Resist.
vs. Supply Voltage
vs. Supply Voltage
1000
100
10
2.4
2.4
V
= 18V
S
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.2
2.0
1.8
1.6
INPUT = 1
INPUT = 0
T
= 150°C
J
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
T
T
= 150°C
= 25°C
J
J
T
= 25°C
J
-40
0
40
80
120
4
6
8
10 12 14 16 18
4
6
8
10 12 14 16 18
TEMPERATURE ( °C)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
MIC4451/4452
6
July 2005
MIC4451/4452
Micrel, Inc.
To guarantee low supply impedance over a wide frequency
range, a parallel capacitor combination is recommended for
supply bypassing. Low inductance ceramic disk capacitors
with short lead lengths (< 0.5 inch) should be used. A 1µF
low ESR film capacitor in parallel with two 0.1µF low ESR
ceramic capacitors, (such as AVX RAM GUARD®), provides
adequate bypassing. Connect one ceramic capacitor directly
between pins 1 and 4. Connect the second ceramic capacitor
directly between pins 8 and 5.
Applications Information
Supply Bypassing
Charging and discharging large capacitive loads quickly
requires large currents. For example, changing a 10,000pF
load to 18V in 50ns requires 3.6A.
The MIC4451/4452 has double bonding on the supply pins,
the ground pins and output pins. This reduces parasitic lead
inductance. Low inductance enables large currents to be
switched rapidly. It also reduces internal ringing that can
cause voltage breakdown when the driver is operated at or
near the maximum rated voltage.
Grounding
The high current capability of the MIC4451/4452 demands
careful PC board layout for best performance. Since the
MIC4451 is an inverting driver, any ground lead impedance
will appear as negative feedback which can degrade switch-
ing speed. Feedback is especially noticeable with slow-rise
time inputs. The MIC4451 input structure includes 200mV
of hysteresis to ensure clean transitions and freedom from
oscillation, but attention to layout is still recommended.
Internal ringing can also cause output oscillation due to
feedback. This feedback is added to the input signal since it
is referenced to the same ground.
Figure 5 shows the feedback effect in detail.As the MIC4451
input begins to go positive, the output goes negative and
several amperes of current flow in the ground lead. As little
as 0.05Ω of PC trace resistance can produce hundreds of
millivolts at the MIC4451 ground pins. If the driving logic is
referenced to power ground, the effective logic input level is
reduced and oscillation may result.
V
DD
1µF
MIC4451
V
DD
φ
2
φ
DRIVE SIGNAL
1
To insure optimum performance, separate ground traces
shouldbeprovidedforthelogicandpowerconnections. Con-
necting the logic ground directly to the MIC4451 GND pins
will ensure full logic drive to the input and ensure fast output
switching. Both of the MIC4451 GND pins should, however,
still be connected to power ground.
DRIVE
LOGIC
CONDUCTION ANGLE
CONTROL 0° TO 180°
CONDUCTION ANGLE
CONTROL 180° TO 360°
φ
M
φ
3
1
V
DD
V
1µF
DD
MIC4452
PHASE 1 OF 3 PHASE MOTOR
DRIVER USING MIC4451/4452
Figure 3. Direct Motor Drive
+15
(x2) 1N4448
5.6kΩ
OUTPUT VOLTAGE vs LOAD CURREN
T
560 Ω
30
29
28
27
26
25
0.1µF
50V
+
1µF
50V
BYV 10 (x 2)
12 Ω LIN
E
1
MKS2
8
6, 7
+
2
MIC4451
0.1µF
WIMA
MKS2
+
5
560µF 50V
100µF 50V
4
0
50 100 150 200 250 300 350
mA
UNITED CHEMCON SXE
Figure 4. Self Contained Voltage Doubler
July 2005
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MIC4451/4452
MIC4451/4452
Micrel, Inc.
Input Stage
The supply current vs. frequency and supply current vs ca-
pacitive load characteristic curves aid in determining power
dissipation calculations. Table 1 lists the maximum safe
operating frequency for several power supply voltages when
driving a 10,000pF load. More accurate power dissipation
figures can be obtained by summing the three dissipation
sources.
TheinputvoltageleveloftheMIC4451changesthequiescent
supplycurrent.TheNchannelMOSFETinputstagetransistor
drives a 320µAcurrent source load. With a logic “1” input, the
maximum quiescent supply current is 400µA. Logic “0” input
level signals reduce quiescent current to 80µA typical.
The MIC4451/4452 input is designed to provide 200mV of
hysteresis. This provides clean transitions, reduces noise
sensitivity, and minimizes output stage current spiking when
changingstates.Inputvoltagethresholdlevelisapproximately
1.5V, making the device TTL compatible over the full tem-
perature and operating supply voltage ranges. Input current
is less than ±10µA.
Given the power dissipation in the device, and the thermal
resistance of the package, junction operating temperature
for any ambient is easy to calculate. For example, the ther-
mal resistance of the 8-pin plastic DIP package, from the
data sheet, is 130°C/W. In a 25°C ambient, then, using a
maximum junction temperature of 125°C, this package will
dissipate 960mW.
The MIC4451 can be directly driven by the TL494,
SG1526/1527, SG1524, TSC170, MIC38C42, and similar
switch mode power supply integrated circuits. By offloading
the power-driving duties to the MIC4451/4452, the power
supply controller can operate at lower dissipation. This can
improve performance and reliability.
Accuratepowerdissipationnumberscanbeobtainedbysum-
ming the three sources of power dissipation in the device:
• Load Power Dissipation (PL)
• Quiescent power dissipation (P )
• Transition power dissipation (PTQ)
The input can be greater than the VS supply, however, current
will flow into the input lead. The input currents can be as high
as 30mAp-p (6.4mARMS) with the input. No damage will occur
to MIC4451/4452 however, and it will not latch.
Calculation of load power dissipation differs depending on
whether the load is capacitive, resistive or inductive.
Resistive Load Power Dissipation
Dissipation caused by a resistive load can be calculated
as:
The input appears as a 7pF capacitance and does not
change even if the input is driven from an AC source. While
the device will operate and no damage will occur up to 25V
below the negative rail, input current will increase up to
1mA/V due to the clamping action of the input, ESD diode,
and 1kΩ resistor.
PL = I2 RO D
where:
I = the current drawn by the load
Power Dissipation
RO = the output resistance of the driver when the output
is high, at the power supply voltage used. (See data
sheet)
CMOS circuits usually permit the user to ignore power dis-
sipation. Logic families such as 4000 and 74C have outputs
whichcanonlysupplyafewmilliamperesofcurrent,andeven
shorting outputs to ground will not force enough current to
destroy the device. The MIC4451/4452 on the other hand,
cansourceorsinkseveralamperesanddrivelargecapacitive
loads at high frequency. The package power dissipation limit
can easily be exceeded. Therefore, some attention should
be given to power dissipation when driving low impedance
loads and/or operating at high frequency.
D = fraction of time the load is conducting (duty cycle)
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the
driver. The energy stored in a capacitor is described by the
equation:
E = 1/2 C V2
+18
WIMA
MKS-2
1 µF
Table 1: MIC4451 Maximum
Operating Frequency
5.0V
18 V
1
TEK CURRENT
PROBE 6302
8
6, 7
VS
Max Frequency
220kHz
MIC4451
18V
15V
10V
5V
0 V
5
0 V
0.1µF
0.1µF
4
2,500 pF
300kHz
POLYCARBONATE
640kHz
LOGIC
GROUND
12 AMPS
PC TRACE RESISTANCE = 0.05Ω
2MHz
300 mV
POWER
GROUND
Conditions:
1. θJA = 150°C/W
2. TA = 25°C
3. CL = 10,000pF
Figure 5. Switching Time Degradation Due to
Negative Feedback
MIC4451/4452
8
July 2005
MIC4451/4452
Micrel, Inc.
Asthisenergyislostinthedrivereachtimetheloadischarged
or discharged, for power dissipation calculations the 1/2 is
removed. This equation also shows that it is good practice
not to place more voltage on the capacitor than is necessary,
as dissipation increases as the square of the voltage applied
to the capacitor. For a driver with a capacitive load:
Transition Power Dissipation
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
is conducted through them from VS to ground. The transition
power dissipation is approximately:
PL = f C (VS)2
where:
PT = 2 f VS (A•s)
f = Operating Frequency
C = Load Capacitance
VS =Driver Supply Voltage
where (A•s) is a time-current factor derived from the typical
characteristic curve “Crossover Energy vs. Supply Volt-
age.”
Inductive Load Power Dissipation
Total power (PD) then, as previously described is:
PD = PL + PQ + PT
For inductive loads the situation is more complicated. For
the part of the cycle in which the driver is actively forcing
current into the inductor, the situation is the same as it is in
the resistive case:
Definitions
CL = Load Capacitance in Farads.
PL1 = I2 RO D
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
However, in this instance the R required may be either
the on resistance of the driver whOen its output is in the high
state, or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the induc-
tor is forcing current through the driver, dissipation is best
described as
f = Operating Frequency of the driver in Hertz
IH = Power supply current drawn by a driver when both
inputs are high and neither output is loaded.
IL = Power supply current drawn by a driver when both
inputs are low and neither output is loaded.
PL2 = I VD (1 – D)
ID = Output current from a driver in Amps.
where V is the forward drop of the clamp diode in the driver
(generalDly around 0.7V). The two parts of the load dissipation
must be summed in to produce PL
PD = Total power dissipated in a driver in Watts.
PL = Power dissipated in the driver due to the driver’s
load in Watts.
PL = PL1 + PL2
PQ = Power dissipated in a quiescent driver in Watts.
Quiescent Power Dissipation
PT = Power dissipated in a driver when the output
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in Figure 7 in ampere-nanoseconds. This
figure must be multiplied by the number of repeti-
tions per second (frequency) to find Watts.
Quiescent power dissipation (P , as described in the input
section) depends on whether thQe input is high or low. A low
input will result in a maximum current drain (per driver) of
≤0.2mA; a logic high will result in a current drain of ≤ 3.0mA.
Quiescent power can therefore be found from:
PQ = VS [D IH + (1 – D) IL]
where:
RO = Output resistance of a driver in Ohms.
VS = Power supply voltage to the IC in Volts.
I = quiescent current with input high
IHL = quiescent current with input low
D = fraction of time input is high (duty cycle)
VS = power supply voltage
July 2005
9
MIC4451/4452
MIC4451/4452
Micrel, Inc.
+18 V
WIMA
MK22
1 µF
5.0V
18 V
1
TEK CURRENT
PROBE 6302
8
2
6, 7
MIC4452
0 V
5
0 V
0.1µF
0.1µF
4
15,000 pF
POLYCARBONATE
Figure 6. Peak Output Current Test Circuit
MIC4451/4452
10
July 2005
MIC4451/4452
Micrel, Inc.
Package Information
PIN 1
DIMENSIONS:
INCH (MM)
0.380 (9.65)
0.370 (9.40)
0.255 (6.48)
0.245 (6.22)
0.135 (3.43)
0.125 (3.18)
0.300 (7.62)
0.013 (0.330)
0.010 (0.254)
0.380 (9.65)
0.320 (8.13)
0.018 (0.57)
0.100 (2.54)
0.130 (3.30)
0.0375 (0.952)
8-Pin Plastic DIP (N)
0.026 (0.65)
MAX)
PIN 1
0.157 (3.99)
0.150 (3.81)
DIMENSIONS:
INCHES (MM)
0.020 (0.51)
0.013 (0.33)
0.050 (1.27)
TYP
45°
0.0098 (0.249)
0.0040 (0.102)
0.010 (0.25)
0.007 (0.18)
0°–8°
0.197 (5.0)
0.189 (4.8)
0.050 (1.27)
0.016 (0.40)
SEATING
PLANE
0.064 (1.63)
0.045 (1.14)
0.244 (6.20)
0.228 (5.79)
8-Pin SOIC (M)
July 2005
11
MIC4451/4452
MIC4451/4452
Micrel, Inc.
0.150 D ±0.005
(3.81 D ±0.13)
0.177 ±0.008
(4.50 ±0.20)
0.400 ±0.015
(10.16 ±0.38)
0.050 ±0.005
(1.27 ±0.13)
0.108 ±0.005
(2.74 ±0.13)
0.241 ±0.017
(6.12 ±0.43)
0.578 ±0.018
(14.68 ±0.46)
SEATING
PLANE
7°
Typ.
0.550 ±0.010
(13.97 ±0.25)
0.067 ±0.005
(1.70 ±0.127)
0.032 ±0.005
(0.81 ±0.13)
0.018 ±0.008
(0.46 ±0.20)
0.103 ±0.013
(2.62±0.33)
0.268 REF
(6.81 REF)
inch
(mm)
Dimensions:
5-Pin TO-220 (T)
MICREL INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL + 1 (408) 944-0800 FAX + 1 (408) 474-1000 WEB http://www.micrel.com
This information furnished by Micrel in this data sheet is believed to be accurate and reliable. However no responsibility is assumed by Micrel for its use.
Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product can
reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant into
the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A Purchaser's
use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser's own risk and Purchaser agrees to fully indemnify
Micrel for any damages resulting from such use or sale.
© 1998 Micrel, Inc.
MIC4451/4452
12
July 2005
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