MIC4452CT [MICREL]
12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process; 12A峰值低侧MOSFET驱动器双极/ CMOS / DMOS工艺
| 型号： | MIC4452CT |
| 厂家： | 
MICREL SEMICONDUCTOR |
| 描述： | 12A-Peak Low-Side MOSFET Driver Bipolar/CMOS/DMOS Process |
| 文件： | 总10页 (文件大小：107K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MIC4451/4452
12A-Peak Low-Side MOSFET Driver
Bipolar/CMOS/DMOS Process
General Description
Features
• BiCMOS/DMOS Construction
• Latch-Up Proof: Fully Isolated Process is Inherently
Immune to Any Latch-up.
MIC4451 and MIC4452 CMOS MOSFET drivers are tough,
efficient, and easy to use. The MIC4451 is an inverting
driver, while the MIC4452 is a non-inverting driver.
• Input Will Withstand Negative Swing of Up to 5V
• Matched Rise and Fall Times............................... 25ns
• High Peak Output Current ............................ 12A Peak
• Wide Operating Range.............................. 4.5V to 18V
• High Capacitive Load Drive...........................62,000pF
• Low Delay Time ........................................... 30ns Typ.
Both versions are capable of 12A (peak) output and can
drive the largest MOSFETs with an improved safe operating
margin. The MIC4451/4452 accepts any logic input from
2.4V to V without external speed-up capacitors or resistor
S
networks. Proprietary circuits allow the input to swing nega-
tive by as much as 5V without damaging the part. Additional
circuits protect against damage from electrostatic discharge.
• Logic High Input for Any Voltage from 2.4V to V
S
• Low Supply Current..............450µA With Logic 1 Input
• Low Output Impedance ........................................ 1.0Ω
MIC4451/4452 drivers can replace three or more discrete
components, reducing PCB area requirements, simplifying
product design, and reducing assembly cost.
• Output Voltage Swing to Within 25mV of GND or V
S
• Low Equivalent Input Capacitance (typ).................7pF
Modern Bipolar/CMOS/DMOS construction guarantees free-
dom from latch-up. The rail-to-rail swing capability of CMOS/
DMOS insures adequate gate voltage to the MOSFET dur-
ing power up/down sequencing. Since these devices are
fabricated on a self-aligned process, they have very low
crossover current, run cool, use little power, and are easy to
drive.
Applications
• Switch Mode Power Supplies
• Motor Controls
• Pulse Transformer Driver
• Class-D Switching Amplifiers
• Line Drivers
• Driving MOSFET or IGBT Parallel Chip Modules
• Local Power ON/OFF Switch
• Pulse Generators
Functional Diagram
VS
MIC4451
INVERTING
0.3mA
0.1mA
OUT
IN
2kΩ
MIC4452
NONINVERTING
GND
5-70
April 1998
MIC4451/4452
Micrel
Ordering Information
Part No.
Temperature Range
Package
8-Pin PDIP
8-Pin SOIC
5-Pin TO-220
8-Pin PDIP
8-Pin SOIC
5-Pin TO-220
Configuration
Inverting
MIC4451BN
MIC4451BM
MIC4451CT
MIC4452BN
MIC4452BM
MIC4452CT
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
Inverting
Inverting
–40°C to +85°C
–40°C to +85°C
0°C to +70°C
Non-Inverting
Non-Inverting
Non-Inverting
Pin Configurations
VS
VS
1
8
7
6
5
IN 2
OUT
OUT
GND
3
4
NC
5
GND
Plastic DIP (N)
SOIC (M)
5
4
3
2
1
OUT
GND
VS
GND
IN
TO-220-5 (T)
Pin Description
Pin Number
TO-220-5
Pin Number
DIP, SOIC
Pin Name
Pin Function
1
2, 4
3, TAB
5
2
IN
GND
VS
Control Input
4, 5
1, 8
6, 7
3
Ground: Duplicate pins must be externally connected together.
Supply Input: Duplicate pins must be externally connected together.
Output: Duplicate pins must be externally connected together.
Not connected.
OUT
NC
April 1998
5-71
MIC4451/4452
Micrel
Absolute Maximum Ratings (Notes 1, 2 and 3)
Operating Ratings
Supply Voltage ..............................................................20V
Operating Temperature (Chip) .................................. 150°C
Operating Temperature (Ambient)
Input Voltage .................................. V + 0.3V to GND – 5V
S
Input Current (V > V ) ............................................50 mA
C Version ................................................... 0°C to +70°C
B Version................................................ –40°C to +85°C
Thermal Impedances (To Case)
IN
S
Power Dissipation, T
≤ 25°C
AMBIENT
PDIP ....................................................................960mW
SOIC .................................................................1040mW
5-Pin TO-220..............................................................2W
5-Pin TO-220 (θ ) ..............................................10°C/W
JC
Power Dissipation, T
≤ 25°C
CASE
5-Pin TO-220.........................................................12.5W
Derating Factors (to Ambient)
PDIP ................................................................7.7mW/°C
SOIC ..............................................................8.3 mW/°C
5-Pin TO-220....................................................17mW/°C
Storage Temperature ............................... –65°C to +150°C
Lead Temperature (10 sec)....................................... 300°C
Electrical Characteristics:
(T = 25°C with 4.5 V ≤ V ≤ 18 V unless otherwise specified.)
A
S
Symbol
Parameter
Conditions
Min
Typ
Max
Units
INPUT
V
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Voltage Range
Input Current
2.4
1.3
1.1
V
V
IH
V
0.8
IL
V
–5
V +.3
S
V
IN
I
0 V ≤ V ≤ V
–10
10
µA
IN
IN
S
OUTPUT
V
High Output Voltage
Low Output Voltage
See Figure 1
See Figure 1
V –.025
S
V
V
Ω
OH
V
.025
1.5
OL
R
O
Output Resistance,
Output High
I
= 10 mA, V = 18V
S
0.6
0.8
12
OUT
R
O
Output Resistance,
Output Low
I
= 10 mA, V = 18V
S
1.5
Ω
OUT
I
Peak Output Current
V
= 18 V (See Figure 6)
A
A
PK
S
I
Continuous Output Current
2
DC
I
Latch-Up Protection
Withstand Reverse Current
Duty Cycle ≤ 2%
t ≤ 300 µs
>1500
mA
R
SWITCHING TIME (Note 3)
t
t
t
t
Rise Time
Fall Time
Test Figure 1, C = 15,000 pF
L
20
24
15
35
40
50
30
60
ns
ns
ns
ns
R
Test Figure 1, C = 15,000 pF
L
F
Delay Time
Delay Time
Test Figure 1
Test Figure 1
D1
D2
Power Supply
Power Supply Current
I
V
V
= 3 V
= 0 V
0.4
80
1.5
150
mA
µA
S
IN
IN
V
Operating Input Voltage
4.5
18
V
S
5-72
April 1998
MIC4451/4452
Micrel
Electrical Characteristics:
(Over operating temperature range with 4.5V < V < 18V unless otherwise specified.)
S
Symbol
INPUT
Parameter
Conditions
Min
Typ
Max
Units
V
Logic 1 Input Voltage
Logic 0 Input Voltage
Input Voltage Range
Input Current
2.4
1.4
1.0
V
V
IH
V
0.8
IL
V
–5
V +.3
S
V
IN
I
0V ≤ V ≤ V
–10
10
µA
IN
IN
S
OUTPUT
V
High Output Voltage
Low Output Voltage
Figure 1
Figure 1
V –.025
S
V
V
Ω
OH
V
0.025
2.2
OL
R
O
Output Resistance,
Output High
I
= 10mA, V = 18V
S
0.8
1.3
OUT
R
O
Output Resistance,
Output Low
I
= 10mA, V = 18V
S
2.2
Ω
OUT
SWITCHING TIME (Note 3)
t
t
t
t
Rise Time
Fall Time
Figure 1, C = 15,000pF
L
23
30
20
40
50
60
40
80
ns
ns
ns
ns
R
Figure 1, C = 15,000pF
L
F
Delay Time
Delay Time
Figure 1
Figure 1
D1
D2
POWER SUPPLY
Power Supply Current
I
V
V
= 3V
= 0V
0.6
0.1
3
0.4
mA
V
5
S
IN
IN
V
Operating Input Voltage
4.5
18
S
NOTE 1:
NOTE 2:
Functional operation above the absolute maximum stress ratings is not implied.
Static-sensitive device. Store only in conductive containers. Handling personnel and equipment should be grounded to
prevent damage from static discharge.
NOTE 3:
Switching times guaranteed by design.
Test Circuits
VS = 18V
VS = 18V
0.1µF
1.0µF
0.1µF
1.0µF
0.1µF
IN
0.1µF
OUT
15000pF
IN
OUT
15000pF
MIC4451
MIC4452
5V
90%
5V
90%
INPUT
t
PW ≥ 0.5µs
INPUT
t
PW ≥ 0.5µs
10%
0V
10%
0V
tPW
tPW
tD1
tF
tD2
tR
tD1
tF
tR
tD2
VS
90%
VS
90%
OUTPUT
10%
OUTPUT
10%
0V
0V
Figure 2. Noninverting Driver Switching Time
Figure 1. Inverting Driver Switching Time
April 1998
5-73
MIC4451/4452
Micrel
Typical Characteristic Curves
Rise Time
Fall Time
Rise and Fall Times
vs. Temperature
vs. Supply Voltage
vs. Supply Voltage
220
220
200
180
160
140
120
100
80
60
50
40
30
20
10
0
CL = 10,000pF
VS = 18V
200
180
160
140
tFALL
47,000pF
47,000pF
120
100
80
60
40
20
0
22,000pF
10,000pF
tRISE
22,000pF
10,000pF
60
40
20
0
-40
0
40
80
120
4
6
8
10 12 14 16 18
4
6
8
10 12 14 16 18
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
TEMPERATURE (°C)
Rise Time
Fall Time
Crossover Energy
vs. Supply Voltage
vs. Capacitive Load
vs. Capacitive Load
300
250
200
150
100
50
300
250
200
150
100
50
10-7
10-8
10-9
PER TRANSITION
5V
5V
10V
10V
18V
18V
0
0
100
1000
10k
100k
100
1000
10k
100k
4
6
8
10 12 14 16 18
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
VOLTAGE (V)
Supply Current
Supply Current
Supply Current
vs. Capacitive Load
vs. Capacitive Load
vs. Capacitive Load
220
200
180
160
140
120
100
80
150
120
90
60
30
0
75
60
45
30
15
0
VS = 18V
VS = 12V
VS = 5V
1 MHz
60
1 MHz
1 MHz
50kHz
50kHz
50kHz
40
200kHz
200kHz
200kHz
20
0
100
1000
10k
100k
100
1000
10k
100k
100
1000
10k
100k
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
CAPACITIVE LOAD (pF)
Supply Current
vs. Frequency
Supply Current
vs. Frequency
Supply Current
vs. Frequency
180
160
140
120
100
80
120
100
80
60
40
20
0
60
50
40
30
20
10
0
VS = 18V
VS = 12V
VS = 5V
0.01µF
0.01µF
0.1µF
0.1µF
0.1µF
0.01µF
1000pF
1000pF
60
1000pF
40
20
0
10k
100k
1M
10M
10k
100k
1M
10M
10k
100k
1M
10M
FREQUENCY (Hz)
FREQUENCY (Hz)
FREQUENCY (Hz)
5-74
April 1998
MIC4451/4452
Micrel
Typical Characteristic Curves (Cont.)
Propagation Delay
Propagation Delay
vs. Temperature
Propagation Delay
vs. Supply Voltage
vs. Input Amplitude
120
110
100
90
80
70
60
50
40
30
20
10
0
50
40
30
20
10
0
50
40
30
20
10
0
VS = 10V
tD2
tD2
tD2
tD1
tD1
tD1
0
2
4
6
8
10
-40
0
40
80
120
4
6
8
10 12 14 16 18
INPUT (V)
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
Quiescent Supply Current
vs. Temperature
High-State Output Resist.
vs. Supply Voltage
Low-State Output Resist.
vs. Supply Voltage
1000
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
2.4
VS = 18V
2.2
2.0
1.8
INPUT = 1
INPUT = 0
1.6
1.4
1.2
TJ = 150°C
TJ = 150°C
100
10
TJ = 25°C
1.0
0.8
0.6
0.4
0.2
0
TJ = 25°C
-40
0
40
80
120
4
6
8
10 12 14 16 18
4
6
8
10 12 14 16 18
5
TEMPERATURE (°C)
SUPPLY VOLTAGE (V)
SUPPLY VOLTAGE (V)
April 1998
5-75
MIC4451/4452
Micrel
To guarantee low supply impedance over a wide frequency
range, a parallel capacitor combination is recommended for
supply bypassing. Low inductance ceramic disk capacitors
with short lead lengths (< 0.5 inch) should be used. A 1µF low
ESRfilmcapacitorinparallelwithtwo0.1µFlowESRceramic
Applications Information
Supply Bypassing
Charging and discharging large capacitive loads quickly
requires large currents. For example, changing a 10,000pF
load to 18V in 50ns requires 3.6A.
®
capacitors, (such as AVX RAM GUARD ), provides ad-
equate bypassing. Connect one ceramic capacitor directly
between pins 1 and 4. Connect the second ceramic capacitor
directly between pins 8 and 5.
The MIC4451/4452 has double bonding on the supply pins,
the ground pins and output pins. This reduces parasitic lead
inductance. Low inductance enables large currents to be
switched rapidly. It also reduces internal ringing that can
cause voltage breakdown when the driver is operated at or
near the maximum rated voltage.
Grounding
The high current capability of the MIC4451/4452 demands
careful PC board layout for best performance. Since the
MIC4451 is an inverting driver, any ground lead impedance
will appear as negative feedback which can degrade switch-
ing speed. Feedback is especially noticeable with slow-rise
time inputs. The MIC4451 input structure includes 200mV of
hysteresis to ensure clean transitions and freedom from
oscillation, but attention to layout is still recommended.
Internal ringing can also cause output oscillation due to
feedback. This feedback is added to the input signal since it
is referenced to the same ground.
V
DD
Figure 5 shows the feedback effect in detail. As the MIC4451
input begins to go positive, the output goes negative and
severalamperesofcurrentflowinthegroundlead. Aslittleas
0.05Ω of PC trace resistance can produce hundreds of
millivolts at the MIC4451 ground pins. If the driving logic is
referenced to power ground, the effective logic input level is
reduced and oscillation may result.
1µF
V
MIC4451
DD
φ
2
φ
DRIVE SIGNAL
1
DRIVE
LOGIC
CONDUCTION ANGLE
CONTROL 0° TO 180°
CONDUCTION ANGLE
CONTROL 180° TO 360°
φ
M
φ
1
3
V
DD
To insure optimum performance, separate ground traces
should be provided for the logic and power connections.
Connecting the logic ground directly to the MIC4451 GND
pins will ensure full logic drive to the input and ensure fast
output switching. Both of the MIC4451 GND pins should,
however, still be connected to power ground.
V
1µF
DD
MIC4452
PHASE 1 OF 3 PHASE MOTOR
DRIVER USING MIC4451/4452
Figure 3. Direct Motor Drive
+15
(x2) 1N4448
5.6 kΩ
OUTPUT VOLTAGE vs LOAD CURRENT
30
560 Ω
0.1µF
50V
29
+
28
1µF
50V
12 Ω LINE
BYV 10 (x 2)
1
MKS 2
27
8
6, 7
+
2
26
25
MIC4451
0.1µF
WIMA
MKS 2
+
5
560µF 50V
100µF 50V
4
0
50 100 150 200 250 300 350
mA
UNITED CHEMCON SXE
Figure 4. Self Contained Voltage Doubler
5-76
April 1998
MIC4451/4452
Micrel
Input Stage
dissipation limit can easily be exceeded. Therefore, some
attention should be given to power dissipation when driving
low impedance loads and/or operating at high frequency.
The input voltage level of the MIC4451 changes the quies-
cent supply current. The N channel MOSFET input stage
transistor drives a 320µA current source load. With a logic “1”
input, the maximum quiescent supply current is 400µA. Logic
“0” input level signals reduce quiescent current to 80µA
typical.
The supply current vs. frequency and supply current vs
capacitiveloadcharacteristiccurvesaidindeterminingpower
dissipation calculations. Table 1 lists the maximum safe
operating frequency for several power supply voltages when
driving a 10,000pF load. More accurate power dissipation
figures can be obtained by summing the three dissipation
sources.
The MIC4451/4452 input is designed to provide 200mV of
hysteresis. This provides clean transitions, reduces noise
sensitivity, and minimizes output stage current spiking when
changing states. Input voltage threshold level is approxi-
mately 1.5V, making the device TTL compatible over the full
temperature and operating supply voltage ranges. Input
current is less than ±10µA.
Given the power dissipation in the device, and the thermal
resistanceofthepackage, junctionoperatingtemperaturefor
any ambient is easy to calculate. For example, the thermal
resistance of the 8-pin plastic DIP package, from the data
sheet,is130°C/W.Ina25°Cambient,then,usingamaximum
junction temperature of 125°C, this package will dissipate
960mW.
The MIC4451 can be directly driven by the TL494, SG1526/
1527, SG1524, TSC170, MIC38C42, and similar switch
mode power supply integrated circuits. By offloading the
power-driving duties to the MIC4451/4452, the power supply
controller can operate at lower dissipation. This can improve
performance and reliability.
Accurate power dissipation numbers can be obtained by
summingthethreesourcesofpowerdissipationinthedevice:
• Load Power Dissipation (P )
L
TheinputcanbegreaterthantheV supply,however,current
will flow into the input lead. The input currents can be as high
as 30mA p-p (6.4mA
S
• Quiescent power dissipation (P )
Q
• Transition power dissipation (P )
T
) with the input. No damage will
RMS
Calculation of load power dissipation differs depending on
whether the load is capacitive, resistive or inductive.
occur to MIC4451/4452 however, and it will not latch.
Theinputappearsasa7pFcapacitanceanddoesnotchange
eveniftheinputisdrivenfromanACsource. Whilethedevice
will operate and no damage will occur up to 25V below the
negative rail, input current will increase up to 1mA/V due to
theclampingactionoftheinput, ESDdiode, and1kΩ resistor.
Resistive Load Power Dissipation
5
Dissipation caused by a resistive load can be calculated as:
2
P = I R D
L
O
Power Dissipation
where:
CMOS circuits usually permit the user to ignore power
dissipation. Logic families such as 4000 and 74C have
outputs which can only supply a few milliamperes of current,
and even shorting outputs to ground will not force enough
currenttodestroythedevice.TheMIC4451/4452ontheother
hand, can source or sink several amperes and drive large
capacitive loads at high frequency. The package power
I = the current drawn by the load
R = the output resistance of the driver when the output is
O
high, at the power supply voltage used. (See data
sheet)
D = fraction of time the load is conducting (duty cycle)
Capacitive Load Power Dissipation
Dissipation caused by a capacitive load is simply the energy
placed in, or removed from, the load capacitance by the
+18
WIMA
MKS-2
1 µF
Table 1: MIC4451 Maximum
Operating Frequency
5.0V
18 V
1
TEK CURRENT
PROBE 6302
8
6, 7
V
S
Max Frequency
220kHz
MIC4451
0 V
5
0 V
18V
15V
10V
5V
0.1µF
0.1µF
4
2,500 pF
POLYCARBONATE
300kHz
LOGIC
GROUND
12 AMPS
PC TRACE RESISTANCE = 0.05Ω
640kHz
2MHz
300 mV
POWER
GROUND
Conditions: 1. θ = 150°C/W
JA
2. T = 25°C
A
3. C = 10,000pF
L
Figure 5. Switching Time Degradation Due to
Negative Feedback
April 1998
5-77
MIC4451/4452
Micrel
driver. The energy stored in a capacitor is described by the
equation:
V = power supply voltage
S
Transition Power Dissipation
2
E = 1/2 C V
Transition power is dissipated in the driver each time its
output changes state, because during the transition, for a
very brief interval, both the N- and P-channel MOSFETs in
the output totem-pole are ON simultaneously, and a current
As this energy is lost in the driver each time the load is
charged or discharged, for power dissipation calculations the
1/2 is removed. This equation also shows that it is good
practice not to place more voltage on the capacitor than is
necessary, as dissipation increases as the square of the
voltage applied to the capacitor. For a driver with a capacitive
load:
is conducted through them from V to ground. The transition
S
power dissipation is approximately:
P = 2 f V (A•s)
T
S
where (A•s) is a time-current factor derived from the typical
characteristic curve “Crossover Energy vs. Supply Voltage.”
2
P = f C (V )
L
S
where:
Total power (P ) then, as previously described is:
D
f = Operating Frequency
C = Load Capacitance
P = P + P + P
D
L
Q
T
V = Driver Supply Voltage
S
Definitions
Inductive Load Power Dissipation
C = Load Capacitance in Farads.
L
For inductive loads the situation is more complicated. For the
part of the cycle in which the driver is actively forcing current
into the inductor, the situation is the same as it is in the
resistive case:
D = Duty Cycle expressed as the fraction of time the
input to the driver is high.
f = Operating Frequency of the driver in Hertz
2
I = Power supply current drawn by a driver when both
H
P
L1
= I R D
O
inputs are high and neither output is loaded.
However, in this instance the R required may be either the
O
I = Power supply current drawn by a driver when both
L
on resistance of the driver when its output is in the high state,
or its on resistance when the driver is in the low state,
depending on how the inductor is connected, and this is still
only half the story. For the part of the cycle when the inductor
is forcing current through the driver, dissipation is best
described as
inputs are low and neither output is loaded.
I = Output current from a driver in Amps.
D
P = Total power dissipated in a driver in Watts.
D
P = Power dissipated in the driver due to the driver’s
L
P
L2
= I V (1 – D)
load in Watts.
D
where V is the forward drop of the clamp diode in the driver
P = Power dissipated in a quiescent driver in Watts.
Q
D
(generally around 0.7V). The two parts of the load dissipation
P = Power dissipated in a driver when the output
T
must be summed in to produce P
L
changes states (“shoot-through current”) in Watts.
NOTE: The “shoot-through” current from a dual
transition (once up, once down) for both drivers is
stated in Figure 7 in ampere-nanoseconds. This
figure must be multiplied by the number of repeti-
tions per second (frequency) to find Watts.
P = P + P
L2
L
L1
Quiescent Power Dissipation
Quiescent power dissipation (P , as described in the input
Q
section) depends on whether the input is high or low. A low
input will result in a maximum current drain (per driver) of
≤ 0.2mA; a logic high will result in a current drain of ≤ 3.0mA.
Quiescent power can therefore be found from:
R = Output resistance of a driver in Ohms.
O
V = Power supply voltage to the IC in Volts.
S
P = V [D I + (1 – D) I ]
Q
S
H
L
where:
I = quiescent current with input high
H
I = quiescent current with input low
L
D = fraction of time input is high (duty cycle)
5-78
April 1998
MIC4451/4452
Micrel
+18 V
WIMA
MK22
1 µF
5.0V
18 V
1
TEK CURRENT
PROBE 6302
8
2
6, 7
MIC4452
0 V
5
0 V
0.1µF
0.1µF
4
15,000 pF
POLYCARBONATE
Figure 6. Peak Output Current Test Circuit
5
April 1998
5-79
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