MIC94031 [MICREL]
TinyFET㈢ P-Channel MOSFET; TinyFET ™ P沟道MOSFET![MIC94031](http://pdffile.icpdf.com/pdf1/p00110/img/icpdf/MIC94030_595267_icpdf.jpg)
型号: | MIC94031 |
厂家: | ![]() |
描述: | TinyFET㈢ P-Channel MOSFET |
文件: | 总6页 (文件大小:145K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
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MIC94030/94031
TinyFET® P-Channel MOSFET
General Description
Features
The MIC94030 and MIC94031 are 4-terminal silicon gate
P-channel MOSFETs that provide low on-resistance in a
very small package.
• 13.5V minimum drain-to-source breakdown
• 0.75Ω typical on-resistance
– at 4.5V gate-to-source voltage
Designed for high-side switch applications where space is
critical, the MIC94030/1 exhibits an on-resistance of
typically 0.75Ω at 4.5V gate-to-source voltage. The
MIC94030/1 also operates with only 2.7V gate-to-source
voltage.
• 0.45Ω typical on-resistance
– at 10V gate-to-source voltage
• Operates with 2.7V gate-to-source voltage
• Separate substrate connection for added control
• Industry’s smallest surface mount package
The MIC94030 is the basic 4-lead P-channel MOSFET.
The MIC94031 is a variation that includes an internal gate
pull-up resistor that can reduce the system parts count in
many applications.
Applications
• Distributed power management
• PCMCIA card power management
• Battery-powered computers, peripherals
• Hand-held bar-code scanners
The 4-terminal SOT-143 package permits a substrate
connection separate from the source connection. This 4-
terminal configuration improves the θJA (improved heat
dissipation) and makes analog switch applications
practical.
• Portable communications equipment
The small size, low threshold, and low RDS(on) make the
MIC94030/1 the ideal choice for PCMCIA card sleep mode
or distributed power management applications.
Ordering Information
Part Number
Junction Temp. Range
Package
Standard
Marking
P30
Pb-Free
Marking
P30
MIC94030BM4
MIC94031BM4
MIC94030YM4
MIC94031YM4
–55° to +150°C
–55° to +150°C
SOT-143
SOT-143
P31
P31
Pin Configuration
Typical PCB Layout
PCB heat sink
plane improves
heat dissipation
D
Drain Substrate
SS
Part
Identification
P3x
P3x
Gate
Source
SOT-143 (M4)
G
S
PCB traces
TinyFET is a registered trademark of Micrel, Inc.
Micrel Inc. • 2180 Fortune Drive • San Jose, CA 95131 • USA • tel +1 (408) 944-0800 • fax + 1 (408) 474-1000 • http://www.micrel.com
M9999-071106
July 2006
Micrel, Inc.
MIC94030/MIC94031
Schematic Symbol
Functional Diagrams
S
S
Source
Substrate
Drain
Ga te
~500k
G
SS
G
SS
Internal
D
gate-to-source
pull-up resistor
D
Schematic Symbol
MIC94030
MIC94031
M9999-071106
July 2006
2
Micrel, Inc.
MIC94030/MIC94031
Absolute Maximum Ratings(1)
Voltage and current values are negative. Signs not shown for clarity.
Total Power Dissipation
TA = 25°C...........................................................568mW
TA = 100°C.........................................................227mW
Thermal Resistance
Drain-to-Source Voltage (pulse).....................................16V
Gate-to-Source Voltage (pulse). ....................................16V
Continuous Drain Current
θJA....................................................................220°C/W
θJC....................................................................130°C/W
Lead Temperature
TA = 25°C...................................................................1A
TA = 100°C..............................................................0.5A
Operating Junction Temperature ..............–55°C to +150°C
Storage Temperature................................–55°C to +150°C
1/16” from case, 10s.......................................... +300°C
Electrical Characteristics
Voltage and current values are negative. Signs not shown for clarity.
Symbol
VBDSS
VGS
Parameter
Condition (Note 1)
VGS = 0V, ID = 250µA
VDS = VGS, ID = 250µA
Min
13.5
0.6
Typ
Max
Units
V
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
1.0
1.4
1
V
IGSS
V
V
DS = 0V, VGS = 12V, Note 2, Note 3
DS = 0V, VGS = 12V, Note 2, Note 4
µA
kꢀ
pF
µA
µA
A
RGS
Gate-Source Resistor
Input Capacitance
500
750
100
1000
CISS
VGS = 0V, VDS = 12V
IDSS
Zero Gate Voltage Drain Current
VDS = 12V, VGS = 0V
25
VDS = 12V, VGS = 0V, TJ = 125°C
0.010
6.3
250
ID(ON)
On-State Drain Current
V
DS = 10V, VGS = 10V, Note 5
RDS(ON)
Drain-Source On-State Resist
V
GS = 10V, ID = 100mA
0.45
0.75
1.20
ꢀ
ꢀ
ꢀ
VGS = 4.5V, ID = 100mA
VGS = 2.7V, ID = 100mA
1.00
gFS
Forward Transconductance
V
DS = 10V, ID = 200mA, Note 5
480
mS
Notes:
1. TA = 25°C unless noted. Substrate connected to source for all conditions.
2. ESD gate protection diode conducts during positive gate-to-source voltage excursions.
3. MIC94030 only.
4. MIC94031 only.
5. Pulse Test: Pulse Width ≤ 80µsec, Duty Cycle ≤ 0.5%.
M9999-071106
July 2006
3
Micrel, Inc.
MIC94030/MIC94031
Typical Characteristics
On Resistance vs.
Drain Current at 25°C
On Resistance vs.
Drain Current at 125°C
1.50
1.25
1.00
0.75
0.50
0.25
0.00
1.50
1.25
1.00
0.75
0.50
0.25
0.00
80µs Pulse Test
80µs Pulse Test
VG = 4.5V
VG = 4.5V
VG = 10V
VG = 10V
0.0
0.5
1.0
1.5
2.0
0.0
0.5
1.0
1.5
2.0
ID (A)
ID (A)
Drain Characteristics
Drain Characteristics
Drain Characteristics
160
140
120
100
80
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
6
5
4
3
2
1
10V
2.0V
5.0V
VGS
4.5V
VGS
9V
VGS
1.8V
8V
4.0V
6V
3.5V
2.5V
2.0V
5V
1.6V
4V
3V
60
40
1.5V
1.0V
1.4V
1.2V
2V
1V
20
0
0.0
0
0
0.5
1.0
1.5
2.0
0
2
4
6
8
10 12 14
2
4
6
8
10 12 14
DRAIN-TO-SOURCE VOLTAGE (V)
DRAIN-TO-SOURCE VOLTAGE (V)
DRAIN-TO-SOURCE VOLTAGE (V)
300µs Pulse Test
80µs Pulse Test
M9999-071106
July 2006
4
Micrel, Inc.
MIC94030/MIC94031
Typical Applications
SS*
S
D
+5V
MIC94030
G
On
Off
74HC04
* Substrate must be
connected to source
Figure 1. Power Switch Application
+12V
Internal
S
D
Resistor
G
Open Drain
Output
SS*
MIC94031
* Substrate must be
connected to source
Figure 2. Power Control Application
SS*
S
D
+12V
A
B
Output
0V
MIC94030
G
Off Off
On Off +12V
Off On +8V
On On don’t!
On
Off
A
74C04†
SS*
2M
S
D
* Substrate must be
connected to source
+8V
+12V
MIC94030
G
†
Use“C” version only.“HC”
versions not rated to 12V
On
Off
B
74C04†
Figure 3. Analog Switch Application
M9999-071106
July 2006
5
Micrel, Inc.
MIC94030/MIC94031
Package Information
SOT-143 (M4)
MICREL, INC. 2180 FORTUNE DRIVE SAN JOSE, CA 95131 USA
TEL +1 (408) 944-0800 FAX +1 (408) 474-1000 WEB http:/www.micrel.com
The information furnished by Micrel in this data sheet is believed to be accurate and reliable. However, no responsibility is assumed by Micrel for its
use. Micrel reserves the right to change circuitry and specifications at any time without notification to the customer.
Micrel Products are not designed or authorized for use as components in life support appliances, devices or systems where malfunction of a product
can reasonably be expected to result in personal injury. Life support devices or systems are devices or systems that (a) are intended for surgical implant
into the body or (b) support or sustain life, and whose failure to perform can be reasonably expected to result in a significant injury to the user. A
Purchaser’s use or sale of Micrel Products for use in life support appliances, devices or systems is a Purchaser’s own risk and Purchaser agrees to fully
indemnify Micrel for any damages resulting from such use or sale.
© 1997 Micrel, Incorporated.
M9999-071106
July 2006
6
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MIC94031BM4T&R
Small Signal Field-Effect Transistor, 1A I(D), 13.5V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-143, 4 PIN
MICREL
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