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27C04AT-15IP [MICROCHIP]

4K (512 x 8) CMOS EEPROM; 4K （ 512 ×8 ）的CMOS EEPROM
27C04AT-15IP
型号： 27C04AT-15IP
厂家： MICROCHIP    MICROCHIP
描述：

4K (512 x 8) CMOS EEPROM
4K （ 512 ×8 ）的CMOS EEPROM

可编程只读存储器 电动程控只读存储器 电可擦编程只读存储器
文件： 总8页 (文件大小：63K)
中文：  中文翻译
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28C04A  
4K (512 x 8) CMOS EEPROM  
FEATURES  
PACKAGE TYPES  
• Fast Read Access Time—150 ns  
• CMOS Technology for Low Power Dissipation  
- 30 mA Active  
DIP  
A7  
A6  
• 1  
2
24 Vcc  
23 A8  
22 NC  
21 WE  
20 OE  
19 NC  
18 CE  
17 I/O7  
16 I/O6  
15 I/O5  
14  
A5  
3
A4  
4
A3  
5
- 100 µA Standby  
A2  
6
• Fast Byte Write Time—200 µs or 1 ms  
• Data Retention >200 years  
A1  
7
A0  
8
I/O0  
I/O1  
I/O2  
9
4
• Endurance - Minimum 10 Erase/Write Cycles  
10  
11  
- Automatic Write Operation  
- Internal Control Timer  
I/O4  
VSS 12  
13 I/O3  
- Auto-Clear Before Write Operation  
- On-Chip Address and Data Latches  
• Data Polling  
PLCC  
• Chip Clear Operation  
A6  
5
6
7
8
9
29 A8  
A5  
A4  
A3  
A2  
A1 10  
A0 11  
28 NC  
27 NC  
26 NC  
25 OE  
24 NC  
23 CE  
22 I/O7  
21 I/O6  
• Enhanced Data Protection  
- VCC Detector  
- Pulse Filter  
- Write Inhibit  
NC 12  
I/O0 13  
• 5-Volt-Only Operation  
• Organized 512x8 JEDEC standard pinout  
- 24-pin Dual-In-Line Package  
- 32-pin PLCC Package  
• Pin 1 indicator on PLCC on top of package  
• Available for Extended Temperature Ranges:  
- Commercial: 0˚C to +70˚C  
- Industrial: -40˚C to +85˚C  
BLOCK DIAGRAM  
I/O0  
I/O7  
DESCRIPTION  
VSS  
Data Protection  
The Microchip Technology Inc. 28C04A is a CMOS 4K  
non-volatile electrically Erasable and Programmable  
Read Only Memory (EEPROM). The 28C04A is  
accessed like a static RAM for the read or write cycles  
without the need of external components. During a  
“byte write”, the address and data are latched internally,  
freeing the microprocessor address and data bus for  
other operations. Following the initiation of write cycle,  
the device will go to a busy state and automatically  
clear and write the latched data using an internal con-  
trol timer. To determine when a write cycle is complete,  
the 28C04A uses Data polling. Data polling allows the  
user to read the location last written to when the write  
operation is complete. CMOS design and processing  
enables this part to be used in systems where reduced  
power consumption and reliability are required. A com-  
plete family of packages is offered to provide the utmost  
flexibility in applications.  
VCC  
Circuitry  
Chip Enable/  
Output Enable  
Control Logic  
CE  
OE  
Input/Output  
Buffers  
WE  
Auto Erase/Write  
Timing  
Data  
Poll  
Program Voltage  
Generation  
A0  
Y
Y Gating  
Decoder  
L
a
t
c
h
e
s
4K bit  
Cell Matrix  
X
Decoder  
A8  
1996 Microchip Technology Inc.  
DS11126F-page 1  
This document was created with FrameMaker 4 0 4  
28C04A  
TABLE 1-1:  
Name  
PIN FUNCTION TABLE  
Function  
1.0  
ELECTRICAL CHARACTERISTICS  
1.1  
MAXIMUM RATINGS*  
VCC and input voltages w.r.t. VSS .......-0.6V to + 6.25V  
Voltage on OE w.r.t. VSS......................-0.6V to +13.5V  
Output Voltage w.r.t. VSS.................-0.6V to VCC+0.6V  
Storage temperature .......................... -65˚C to +125˚C  
Ambient temp. with power applied ....... -50˚C to +95˚C  
A0 - A8  
CE  
Address Inputs  
Chip Enable  
OE  
Output Enable  
Write Enable  
WE  
I/O0 - I/O7 Data Inputs/Outputs  
*Notice: Stresses above those listed under “Maximum Ratings”  
may cause permanent damage to the device. This is a stress rat-  
ing only and functional operation of the device at those or any  
other conditions above those indicated in the operation listings of  
this specification is not implied. Exposure to maximum rating con-  
ditions for extended periods may affect device reliability.  
VCC  
VSS  
NC  
+5V Power Supply  
Ground  
No Connect; No Internal Connection  
NU  
Not Used; No External Connection is  
Allowed  
TABLE 1-2:  
READ/WRITE OPERATION DC CHARACTERISTICS  
VCC = +5V ±10%  
Commercial (C): Tamb =  
0˚C to +70˚C  
Industrial  
(I): Tamb = -40˚C to +85˚C  
Parameter  
Status  
Symbol  
Min  
Max  
Units  
Conditions  
Input Voltages  
Logic ‘1’  
Logic ‘0’  
VIH  
VIL  
2.0  
-0.1  
VCC+1  
0.8  
V
V
Input Leakage  
ILI  
-10  
10  
10  
µA  
VIN = -0.1V to VCC+1  
Input Capacitance  
CIN  
pF  
VIN = 0V; Tamb = 25˚C;  
f = 1 MHz  
Output Voltages  
Logic ‘1’  
Logic ‘0’  
VOH  
VOL  
2.4  
-10  
V
V
IOH = -400 µA  
IOL = 2.1 mA  
0.45  
10  
Output Leakage  
ILO  
µA  
VOUT = -0.1V TO VCC + 0.1V  
Output Capacitance  
COUT  
12  
pF  
VIN = 0V; TAMB = 25˚C;  
f = 1 MHz  
Power Supply Current, Active  
Power Supply Current, Standby  
TTL input  
ICC  
30  
mA f = 5 MHz (Note 1)  
VCC = 5.5V  
TTL input  
TTL input  
CMOS input ICC(S)CMOS  
ICC(S)TTL  
ICC(S)TTL  
2
3
100  
mA  
mA  
µA  
CE = VIH (0˚C to +70˚C)  
CE = VIH (-40˚C to +85˚C)  
CE = VCC-0.3 to Vcc+1  
Note 1: AC power supply current above 5 MHz; 1 mA/MHz.  
DS11126F-page 2  
1996 Microchip Technology Inc.  
28C04A  
TABLE 1-3:  
READ OPERATION AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V  
1 TTL Load + 100 pF  
Input Rise and Fall Times: 20 ns  
Ambient Temperature:  
Commercial (C): Tamb = 0˚C to +70˚C  
Industrial (I): Tamb = -40˚C to +85˚C  
28C04A-15  
Sym  
28C04A-20  
28C04A-25  
Parameter  
Units  
Conditions  
Min  
Max  
Min  
Max  
Min  
Max  
Address to Output Delay  
CE to Output Delay  
tACC  
tCE  
150  
150  
70  
200  
200  
80  
250  
250  
100  
70  
ns  
ns  
ns  
ns  
ns  
OE = CE = VIL  
OE = VIL  
OE to Output Delay  
tOE  
CE = VIL  
CE to OE High Output Float  
tOFF  
tOH  
0
0
50  
0
0
55  
0
0
Output Hold fromAddress, CE  
or OE, whichever occurs first  
Endurance  
—
1M  
—
1M  
—
1M  
—
cycles 25°C, Vcc =  
5.0V, Block  
Mode (Note)  
Note: This parameter is not tested but guaranteed by characterization. For endurance estimates in a specific applica-  
tion, please consult the Total Endurance Model which can be obtained on our BBS or website.  
FIGURE 1-1: READ WAVEFORMS  
VIH  
Address  
CE  
Address Valid  
VIL  
VIH  
VIL  
tCE(2)  
VIH  
VIL  
OE  
tOFF(1,3)  
tOH  
tOE(2)  
VOH  
High Z  
High Z  
Data  
WE  
Valid Output  
VOL  
VIH  
VIL  
tACC  
Notes: (1) tOFF is specified for OE or CE, whichever occurs first  
(2) OE may be delayed up to tCE - tOE after the falling edge of CE without impact on tCE  
(3) This parameter is sampled and is not 100% tested  
1996 Microchip Technology Inc.  
DS11126F-page 3  
28C04A  
TABLE 1-4:  
BYTE WRITE AC CHARACTERISTICS  
AC Testing Waveform:  
Output Load:  
VIH = 2.4V; VIL = 0.45V; VOH = 2.0V; VOL = 0.8V  
1 TTL Load + 100 pF  
Input Rise/Fall Times:  
Ambient Temperature:  
20 nsec  
Commercial (C): Tamb= 0˚C to 70˚C  
Industrial  
(I): Tamb= -40˚C to 85˚C  
Parameter  
Symbol  
Min  
Max  
Units  
Remarks  
Address Set-Up Time  
Address Hold Time  
Data Set-Up Time  
Data Hold Time  
tAS  
tAH  
10  
50  
50  
10  
100  
50  
10  
10  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ms  
µs  
tDS  
tDH  
Write Pulse Width  
Write Pulse High Time  
OE Hold Time  
tWPL  
tWPH  
tOEH  
tOES  
tDV  
Note 1  
Note 2  
OE Set-Up Time  
Data Valid Time  
1000  
1
tWC  
tWC  
0.5 ms typical  
Write Cycle Time (28C04A)  
Write Cycle Time (28C04AF)  
200  
100 µs typical  
Note 1: A write cycle can be initiated be CE or WE going low, whichever occurs last. The data is latched on the pos-  
itive edge of CE or WE, whichever occurs first.  
2: Data must be valid within 1000ns max. after a write cycle is initiated and must be stable at least until tDH after  
the positive edge of WE or CE, whichever occurs first.  
FIGURE 1-2: PROGRAMMING WAVEFORMS  
VIH  
Address  
VIL  
tAS  
tAH  
VIH  
VIL  
tWPL  
tDS  
CE, WE  
Data In  
tDH  
tDV  
VIH  
VIL  
tOES  
VIH  
VIL  
OE  
tOEH  
DS11126F-page 4  
1996 Microchip Technology Inc.  
28C04A  
FIGURE 1-3: DATA POLLING WAVEFORMS  
VIH  
Last Written  
Address Valid  
Address Valid  
Address  
CE  
VIL  
t ACC  
VIH  
VIL  
tCE  
t WPH  
VIH  
VIL  
tWPL  
WE  
tOE  
VIH  
VIL  
OE  
tDV  
VIH  
VIL  
Data In  
Valid  
True Data Out  
Data  
I/O7 Out  
tWC  
FIGURE 1-4: CHIP CLEAR WAVEFORMS  
VIH  
CE  
VIL  
VH  
OE  
VIH  
tS  
tH  
tW  
VIH  
WE  
tW  
= 10ms  
VIL  
tS = = 1µs  
tH  
= 12.0V ±0.5V  
VH  
1996 Microchip Technology Inc.  
DS11126F-page 5  
28C04A  
2.4  
Write Mode  
2.0  
DEVICE OPERATION  
The Microchip Technology Inc. 28C04A has four basic  
modes of operation—read, standby, write inhibit, and  
byte write—as outlined in the following table.  
The 28C04A has a write cycle similar to that of a Static  
RAM. The write cycle is completely self-timed and initi-  
ated by a low going pulse on the WE pin. On the falling  
edge of WE, the address information is latched. On ris-  
ing edge, the data and the control pins (CE and OE) are  
latched.  
Operation  
CE  
IE  
WE  
I/O  
Mode  
Read  
L
H
H
X
X
L
L
X
X
L
H
X
X
X
H
L
DOUT  
High Z  
High Z  
High Z  
High Z  
DIN  
2.5  
Data Polling  
Standby  
The 28C04A features Data polling to signal the comple-  
tion of a byte write cycle. During a write cycle, an  
attempted read of the last byte written results in the  
data complement of I/O7 (I/O0 to I/O6 are indetermin-  
able). After completion of the write cycle, true data is  
available. Data polling allows a simple read/compare  
operation to determine the status of the chip eliminating  
the need for external hardware.  
Write Inhibit  
Write Inhibit  
Write Inhibit  
Byte Write  
X
H
Byte Clear  
Automatic Before Each “Write”  
X = Any TTL level.  
2.6  
Chip Clear  
All data may be cleared to 1's in a chip clear cycle by  
raising OE to 12 volts and bringing the WE and CE low.  
This procedure clears all data.  
2.1  
Read Mode  
The 28C04A has two control functions, both of which  
must be logically satisfied in order to obtain data at the  
outputs. Chip enable (CE) is the power control and  
should be used for device selection. Output Enable  
(OE) is the output control and is used to gate data to the  
output pins independent of device selection. Assuming  
that addresses are stable, address access time (tACC)  
is equal to the delay from CE to output (tCE). Data is  
available at the output tOE after the falling edge of OE,  
assuming that CE has been low and addresses have  
been stable for at least tACC-tOE.  
2.2  
Standby Mode  
The 28C04A is placed in the standby mode by applying  
a high signal to the CE input. When in the standby  
mode, the outputs are in a high impedance state, inde-  
pendent of the OE input.  
2.3  
Data Protection  
In order to ensure data integrity, especially during criti-  
cal power-up and power-down transitions, the following  
enhanced data protection circuits are incorporated:  
First, an internal VCC detect (3.3 volts typical) will inhibit  
the initiation of non-volatile programming operation  
when VCC is less than the VCC detect circuit trip.  
Second, there is a WE filtering circuit that prevents WE  
pulses of less than 10 ns duration from initiating a write  
cycle.  
Third, holding WE or CE high or OE low, inhibits a write  
cycle during power-on and power-off (VCC).  
DS11126F-page 6  
1996 Microchip Technology Inc.  
28C04A  
28C04A Product Identification System  
To order or to obtain information, e.g., on pricing or delivery, please use the listed part numbers, and refer to the factory or the listed  
sales offices.  
28C04A  
F
T
–
15  
I
/P  
Package:  
L = Plastic Leaded Chip Carrier (PLCC)  
P = Plastic DIP (600mill)  
Temperature  
Range:  
Blank = 0°C to +70°C  
I = -40°C to +85°C  
Access Time:  
15  
20  
25  
150 ns  
200 ns  
250 ns  
Shipping:  
Option:  
Device:  
Blank  
T
Tube  
Tape and Reel “L” only  
Blank = twc = 1ms  
F = twc = 200 µs  
28C04A  
512 x 8 CMOS EEPROM  
1996 Microchip Technology Inc.  
DS11126F-page 7  
WORLDWIDE SALES & SERVICE  
AMERICAS  
Corporate Office  
ASIA/PACIFIC  
China  
EUROPE  
United Kingdom  
Microchip Technology Inc.  
Microchip Technology  
Arizona Microchip Technology Ltd.  
Unit 6, The Courtyard  
Meadow Bank, Furlong Road  
Bourne End, Buckinghamshire SL8 5AJ  
Tel: 44 1628 850303 Fax: 44 1628 850178  
2355 West Chandler Blvd.  
Chandler, AZ 85224-6199  
Tel: 602 786-7200 Fax: 602 786-7277  
Technical Support: 602 786-7627  
Web: http://www.microchip.com  
Unit 406 of Shanghai Golden Bridge Bldg.  
2077 Yan’an Road West, Hongiao District  
Shanghai, Peoples Republic of China  
Tel: 86 21 6275 5700  
Fax: 011 86 21 6275 5060  
Hong Kong  
Microchip Technology  
RM 3801B, Tower Two  
Metroplaza  
223 Hing Fong Road  
Kwai Fong, N.T. Hong Kong  
Tel: 852 2 401 1200 Fax: 852 2 401 3431  
India  
Microchip Technology  
No. 6, Legacy, Convent Road  
Bangalore 560 025 India  
Tel: 91 80 526 3148 Fax: 91 80 559 9840  
France  
Atlanta  
Arizona Microchip Technology SARL  
Zone Industrielle de la Bonde  
2 Rue du Buisson aux Fraises  
91300 Massy - France  
Tel: 33 1 69 53 63 20 Fax: 33 1 69 30 90 79  
Germany  
Arizona Microchip Technology GmbH  
Gustav-Heinemann-Ring 125  
D-81739 Muenchen, Germany  
Tel: 49 89 627 144 0 Fax: 49 89 627 144 44  
Microchip Technology Inc.  
500 Sugar Mill Road, Suite 200B  
Atlanta, GA 30350  
Tel: 770 640-0034 Fax: 770 640-0307  
Boston  
Microchip Technology Inc.  
5 Mount Royal Avenue  
Marlborough, MA 01752  
Tel: 508 480-9990 Fax: 508 480-8575  
Chicago  
Italy  
Microchip Technology Inc.  
333 Pierce Road, Suite 180  
Itasca, IL 60143  
Tel: 708 285-0071 Fax: 708 285-0075  
Dallas  
Microchip Technology Inc.  
14651 Dallas Parkway, Suite 816  
Dallas, TX 75240-8809  
Tel: 972 991-7177 Fax: 972 991-8588  
Dayton  
Microchip Technology Inc.  
Suite 150  
Arizona Microchip Technology SRL  
Centro Direzionale Colleone Pas Taurus 1  
Viale Colleoni 1  
20041 Agrate Brianza  
Milan Italy  
Korea  
Microchip Technology  
168-1, Youngbo Bldg. 3 Floor  
Samsung-Dong, Kangnam-Ku,  
Seoul, Korea  
Tel: 82 2 554 7200 Fax: 82 2 558 5934  
Singapore  
Microchip Technology  
200 Middle Road  
#10-03 Prime Centre  
Singapore 188980  
Tel: 65 334 8870 Fax: 65 334 8850  
Taiwan, R.O.C  
Microchip Technology  
10F-1C 207  
Tung Hua North Road  
Taipei, Taiwan, ROC  
Tel: 886 2 717 7175 Fax: 886 2 545 0139  
Tel: 39 39 6899939 Fax: 39 39 689 9883  
JAPAN  
Microchip Technology Intl. Inc.  
Benex S-1 6F  
3-18-20, Shin Yokohama  
Kohoku-Ku, Yokohama  
Kanagawa 222 Japan  
Two Prestige Place  
Miamisburg, OH 45342  
Tel: 513 291-1654 Fax: 513 291-9175  
Tel: 81 45 471 6166 Fax: 81 45 471 6122  
9/3/96  
Los Angeles  
Microchip Technology Inc.  
18201 Von Karman, Suite 1090  
Irvine, CA 92612  
Tel: 714 263-1888 Fax: 714 263-1338  
NewYork  
Microchip Technmgy Inc.  
150 Motor Parkway, Suite 416  
Hauppauge, NY 11788  
Tel: 516 273-5305 Fax: 516 273-5335  
San Jose  
Microchip Technology Inc.  
2107 North First Street, Suite 590  
San Jose, CA 95131  
Tel: 408 436-7950 Fax: 408 436-7955  
Toronto  
Microchip Technology Inc.  
5925 Airport Road, Suite 200  
Mississauga, Ontario L4V 1W1, Canada  
Tel: 905 405-6279 Fax: 905 405-6253  
All rights reserved. 1996, Microchip Technology Incorporated, USA. 9/96  
Printed on recycled paper.  
Information contained in this publication regarding device applications and the like is intended through suggestion only and may be superseded by updates. No repre-  
sentation or warranty is given and no liability is assumed by Microchip Technology Incorporated with respect to the accuracy or use of such information, or infringement  
of patents or other intellectual property rights arising from such use or otherwise. Use of Microchip’s products as critical components in life support systems is not autho-  
rized except with express written approval by Microchip. No licenses are conveyed, implicitly or otherwise, under any intellectual property rights. The Microchip logo and  
name are registered trademarks of Microchip Technology Inc. All rights reserved. All other trademarks mentioned herein are the property of their respective companies.  
DS11126F-page 8  
1996 Microchip Technology Inc.  

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